VLB70-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VLB70-12F is Designed for B FEATURES: .112 x 45 A * * * OmnigoldTM Metalization System O.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS I GH IC 12 A VCBO 36 V VCEO VEBO PDISS DIM MINIMUM inches / mm inches / mm 18 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 3.5 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 TJ 183 W @ TC = 25 C O -65 C to +200 C TSTG -65 OC to +150 OC JC 1.05 OC/W CHARACTERISTICS SYMBOL .385 / 9.78 E O O MAXIMUM F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .280 / 7.11 I J ORDER CODE: ASI10737 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 3.5 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V MHz GP C VCE = 12.5 V IC = 5.0 A 10 f = 1.0 POUT = 70 W f = 50 MHz 10 mA --- --- 270 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 10 % REV. A 1/1