A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 100 mA 36 V
BVCEO IC = 50 mA 18 V
BVEBO IE = 10 mA 3.5 V
ICES VCE = 15 V 10 mA
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
COB VCB = 12.5 V f = 1.0
MHz 270 pF
GP
ηηC VCE = 12.5 V POUT = 70 W f = 50 MHz
10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VLB70-12F
DESCRIPTION:
The ASI VLB70-12F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12 A
VCBO
36 V
VCEO 18 V
VEBO 3.5 V
PDISS
183 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 1.05 OC/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10737
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
