PZT751 PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features * High Current * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 Package Ensures Level Mounting, Resulting in * * * www.onsemi.com SOT-223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die NPN Complement is PZT651T1G S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* 4 1 2 3 SOT-223 CASE 318E STYLE 1 COLLECTOR 2, 4 BASE 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -80 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -2.0 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD Storage Temperature Range Tstg -65 to 150 C Junction Temperature TJ 150 C Rating 0.8 6.4 Maximum Temperature for Soldering Purposes Time in Solder Bath AYW ZT751G G 1 A Y W G Symbol Value Unit RqJA 156 C/W TL 260 C 10 Sec = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device THERMAL CHARACTERISTICS Thermal Resistance from Junction-to- Ambient in Free Air MARKING DIAGRAM W mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. Rating EMITTER 3 Package Shipping PZT751T1G SOT-223 (Pb-Free) 1,000 / Tape & Reel SPZT751T1G SOT-223 (Pb-Free) 1,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2015 January, 2015 - Rev. 9 1 Publication Order Number: PZT751T1/D PZT751 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max -60 - -80 - -5.0 - - -0.1 - -100 75 75 75 40 - - - - - - -0.5 -0.3 - -1.0 - -1.2 75 - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC = -100 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO Base-Emitter Cutoff Current (VEB = -4.0 Vdc) IEBO Collector-Base Cutoff Current (VCB = -80 Vdc, IE = 0) ICBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = -50 mAdc, VCE = -2.0 Vdc) (IC = -500 mAdc, VCE = -2.0 Vdc) (IC = -1.0 Adc, VCE = -2.0 Vdc) (IC = -2.0 Adc, VCE = -2.0 Vdc) hFE Collector-Emitter Saturation Voltages (IC = -2.0 Adc, IB = -200 mAdc) (IC = -1.0 Adc, IB = -100 mAdc) VCE(sat) Base-Emitter Voltages (IC = -1.0 Adc, VCE = -2.0 Vdc) VBE(on) Base-Emitter Saturation Voltage (IC = -1.0 Adc, IB = -100 mAdc) VBE(sat) Current-Gain-Bandwidth (IC = -50 mAdc, VCE = -5.0 Vdc, f = 100 MHz) - Vdc Vdc Vdc fT 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. www.onsemi.com 2 MHz PZT751 TYPICAL CHARACTERISTICS 250 225 -2.0 TJ = 125C -1.8 VCE = -2.0 V -1.6 V, VOLTAGE (VOLTS) 175 150 25C 125 100 -55C 75 -1.4 -1.2 -0.8 VBE(on) @ VCE = 2.0 V -0.6 -0.4 25 -0.2 0 -10 -20 VBE(sat) @ IC/IB = 10 -1.0 50 VCE(sat) @ IC/IB = 10 0 -50 -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) -100 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) Figure 2. On Voltages Figure 1. Typical DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 200 -1.0 -0.9 TJ = 25C -0.8 -0.7 -0.6 -0.5 -0.4 IC = -500 mA -0.3 IC = -2.0 A -0.2 -0.1 IC = -10 mA IC = -100 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) -50 -100-200 -500 Figure 3. Collector Saturation Region www.onsemi.com 3 -2.0 A -4.0 A PZT751 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM A 1.50 1.63 1.75 0.060 0.064 A1 0.02 0.06 0.10 0.001 0.002 b 0.60 0.75 0.89 0.024 0.030 b1 2.90 3.06 3.20 0.115 0.121 c 0.24 0.29 0.35 0.009 0.012 D 6.30 6.50 6.70 0.249 0.256 E 3.30 3.50 3.70 0.130 0.138 e 2.20 2.30 2.40 0.087 0.091 e1 0.85 0.94 1.05 0.033 0.037 L 0.20 --- --- 0.008 --- L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0 10 0 - - q STYLE 1: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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