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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SGH40N60UF 600 V PT IGBT General Description Features Fairchild's UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. * High Speed Switching * Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 20 A * High Input Impedance Application * General Inverter, PFC C G E TO-3P G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C Ratings 600 20 40 20 160 160 64 -55 to +150 -55 to +150 Unit V V A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (c)2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C1 Typ. --- 1 Max. 0.77 40 Unit C/W C/W www.fairchildsemi.com SGH40N60UF -- 600 V PT IGBT November 2013 Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 uA 600 -- -- V VGE = 0 V, IC = 1 mA -- 0.6 -- V/C VCE = VCES, VGE = 0 V VGE = VGES, VCE = 0 V --- --- 250 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 1430 170 50 ---- pF pF pF ------------------- 15 30 65 50 160 200 360 30 37 110 144 310 430 740 97 20 25 14 --130 150 --600 --200 250 --1200 150 30 40 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20 mA, VCE = VGE IC = 20 A, VGE = 15 V IC = 40 A, VGE = 15 V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance (c)2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C1 VCC = 300 V, IC = 20 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25C VCC = 300 V, IC = 20 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 125C VCE = 300 V, IC = 20 A, VGE = 15 V Measured 5mm from PKG 2 www.fairchildsemi.com SGH40N60UF -- 600 V PT IGBT Electrical Characteristics of the IGBT T Common Emitter TC = 25 [A] 70 C 12V 80 Collector Current, I [A] 120 C Collector Current, I Common Emitter VGE = 15V TC = 25 TC = 125 15V 20V VGE = 10V 60 50 40 30 20 40 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] 1 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 30 4 VCC = 300V Load Current : peak of square wave [V] Common Emitter VGE = 15V 40A 2 Load Current [A] Collector - Emitter Voltage, V CE 25 3 20A IC = 10A 20 15 10 1 5 Duty cycle : 50% TC = 100 Power Dissipation = 64W 0 0 0 30 60 90 120 0.1 150 1 Case Temperature, TC [] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 [V] Common Emitter TC = 125 16 16 Collector - Emitter Voltage, V CE CE [V] Common Emitter TC = 25 Collector - Emitter Voltage, V 1000 Frequency [KHz] 12 8 40A 4 20A IC = 10A 0 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 20 0 Gate - Emitter Voltage, VGE [V] SGH40N60UF Rev. C1 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2009 Fairchild Semiconductor Corporation 4 Fig 6. Saturation Voltage vs. VGE 3 www.fairchildsemi.com SGH40N60UF -- 600 V PT IGBT 80 160 2000 Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125 Cies Switching Time [ns] Capacitance [pF] 300 Common Emitter VGE = 0V, f = 1MHz TC = 25 1500 1000 Coes Ton Tr 100 500 Cres 0 1 10 10 1 30 10 Collector - Emitter Voltage, VCE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 2000 Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125 Toff 1000 Tf Tf 100 Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125 200 Eon Eoff Eon Switching Loss [uJ] Switching Time [ns] 100 Gate Resistance, RG [ ] Eoff 100 20 50 1 10 100 200 1 10 Gate Resistance, RG [ ] Fig 10. Switching Loss vs. Gate Resistance 1000 200 Switching Time [nS] 100 Switching Time [ns] 200 Gate Resistance, RG [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Ton Common Emitter VCC = 300V, VGE = 15V RG = 10 TC = 25 TC = 125 Tr 100 Common Emitter VCC = 300V, VGE = 15V RG = 10 TC = 25 TC = 125 Toff Tf Toff 100 Tf 20 10 10 15 20 25 30 35 10 40 Fig 11. Turn-On Characteristics vs. Collector Current (c)2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C1 15 20 25 30 35 40 Collector Current, IC [A] Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current 4 www.fairchildsemi.com SGH40N60UF -- 600 V PT IGBT 2500 15 Eoff Eon 100 Eoff Eon Common Emitter VCC = 300V, VGE = 15V RG = 10 T C = 25 T C = 125 10 10 15 20 25 30 35 12 Gate - Emitter Voltage, V GE [ V ] Switching Loss [uJ] 1000 Common Emitter RL = 15 TC = 25 9 300 V 6 VCC = 100 V 200 V 3 0 40 0 30 60 90 120 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 500 500 IC MAX. (Pulsed) 100 100 Collector Current, I C [A] Collector Current, I C [A] 50us 100us IC MAX. (Continuous) 1 10 DC Operation 1 0.1 Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area o VGE=20V, TC=100 C 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1 Thermal Response, Zthjc [/W] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm single pulse t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm Zthjc + TC 1E-3 -5 10 10 -4 10 -3 -2 10 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C1 5 www.fairchildsemi.com SGH40N60UF -- 600 V PT IGBT 3000 SGH40N60UF -- 600 V PT IGBT Mechanical Dimensions Figure 18. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 (c)2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C1 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C1 7 www.fairchildsemi.com SGH40N60UF -- 600 V PT IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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