FDS8984 N-Channel PowerTrench(R) MOSFET FDS8984 N-Channel PowerTrench(R) MOSFET 30V, 7A, 23m Features General Description Max rDS(on) = 23m, VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Max rDS(on) = 30m, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested RoHS Compliant DD2 DD2 D1 D 5 DD1 4 Q2 6 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 3 2 7 Q1 8 S 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current Continuous ID Ratings 30 Units V 20 V (Note 1a) Pulsed EAS PD TJ, TSTG Single Pulse Avalache Energy (Note 2) 7 A 30 A 32 mJ Power Dissipation for Single Operation 1.6 W Derate above 25C 13 mW/C -55 to 150 C (Note 1a) 78 C/W (Note 1) 40 C/W Operating and Storage Temperature Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984 (c)2007 Semiconductor Components Industries, LLC. October-2017, Rev. 1 Package SO-8 Reel Size 330mm 1 Tape Width 12mm Quantity 2500 units Publication Order Number: FDS8984/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = 20V,VDS = 0V 30 V 23 mV/C 1 TJ = 125C 250 A 100 nA 2.5 V On Characteristics (Note 3) VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C rDS(on) Drain to Source On Resistance 1.2 1.7 - 4.3 mV/C VGS = 10V, ID = 7A 19 23 VGS = 4.5V, ID = 6A 24 30 VGS = 10V, ID = 7A, TJ = 125C 26 32 m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz 475 635 pF 100 135 pF 65 100 pF f = 1MHz 0.9 1.6 5 10 ns 9 18 ns 42 68 ns 21 34 ns 9.2 13 nC 5.0 7 Switching Characteristics (Note 3) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 15V, ID = 7A VGS = 10V, RGS = 33 VDS = 15V, VGS = 10V, ID = 7A VDS = 15V, VGS = 5V, ID = 7A nC 1.5 nC 2.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ISD = 7A 0.9 1.25 ISD = 2.1A 0.8 1.0 V 33 ns 20 nC IF = 7A, di/dt = 100A/s V Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of oz copper Scale 1 : 1 on letter size paper 2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%. www.onsemi.com 2 c) 135C/W when mounted on a minimun pad FDS8984 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted RDS(ON), NORMALIZED ID, DRAIN CURRENT (A) VGS=10V PULSE DURATION =80S DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V 20 VGS=4.5V VGS=4.0V 10 VGS=3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 1. On Region Characteristics RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 7A VGS = 10V 1.2 1.0 0.8 -40 0 40 80 120 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 2.5 VGS=3.0V 2.0 VGS=3.5V VGS=4.0V 1.5 1.0 VGS=5.0V 0.5 5 160 Figure 3. On Resistance vs Temperature IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) O TJ = 150 C 15 O TJ = 25 C 10 5 0 O TJ = - 55 C 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 20 25 30 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID = 7A 55 50 45 40 TJ = 125oC 35 30 25 20 15 TJ = 25oC 2 30 VDD = 5V 20 15 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Votlage PULSE DURATION =80S DUTY CYCLE =0.5% MAX 25 10 VGS=10V 60 TJ, JUNCTION TEMPERATURE (oC) 30 VGS=4.5V Figure 2. On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -80 3.0 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 DRAIN-SOURCE ON-RESISTANCE 30 = 25C unless otherwise noted 4 10 1 VGS = 0V TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 700 VGS, GATE TO SOURCE VOLTAGE(V) 10 600 CISS VDD = 15V VDD = 10V 6 4 CAPACITANCE (pF) 8 VDD = 20V 2 500 f = 1MHz VGS = 0V 400 COSS 300 200 100 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 CRSS 0.1 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 20 10 O STARTING TJ = 25 C O STARTING TJ = 125 C 1 0.01 0.1 7 6 VGS=10V 5 4 VGS=4.5V 3 2 1 1 10 0 25 20 100us 1ms 0.01 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED TA = 25oC DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 11. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 10us 0.1 100 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 1 75 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 50 o tAV, TIME IN AVALANCHE (mS) ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 3000 TA = 25oC 1000 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 - T A -----------------------125 I = I25 VGS=10V 10 SINGLE PULSE 1 -5 10 -4 10 -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 3 10 FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ Normalized Thermal Impedance ZJA 2 1 0.1 = 25C unless otherwise noted DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 1E-3 1E-4 -5 10 t2 SINGLE PULSE -4 10 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 10 -1 10 0 10 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve www.onsemi.com 5 1 10 2 10 3 10 FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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