IXFH12N100F - IXYS - Datasheet.Directory

HiPerRFTM

Power MOSFETs

F-Class: MegaHertz Switching

Features

zRF capable MOSFETs

zDouble metal process for low gate

resistance

zRugged polysilicon gate cell structure

zUnclamped Inductive Switching (UIS)

rated

zLow package inductance

- easy to drive and to protect

zFast intrinsic rectifier

Applications

zDC-DC converters

zSwitched-mode and resonant-mode

power supplies, >500kHz switching

zDC choppers

z13.5 MHz industrial applications

zPulse generation

zLaser drivers

z RF amplifiers

Advantages

zSpace savings

zHigh power density

VDSS = 1000V

ID25 = 12A

RDS(on) ≤≤

≤≤

≤ 1.05ΩΩ

ΩΩ

trr ≤ ≤

≤ ≤

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, Low

Intrinsic Rg, High dV/dt, Low trr

IXFH12N100F

IXFT12N100F

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1000 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V

VGSS Continuous ± 20 V

VGSM Transient ± 30 V

ID25 TC= 25°C12A

IDM TC= 25°C, pulse width limited by TJM 48 A

IAR TC= 25°C12A

EAS TC= 25°C 1 J

dV/dt IS≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS 20 V/ns

TJ ≤ 150°C, RG = 2Ω

PDTC= 25°C 300 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum lead temperature for soldering 300 °C

TSOLD Plastic body for 10s 260 °C

MdMounting torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 1000 V

VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V

IGSS VGS = ± 20V, VDS = 0V ± 100 nA

IDSS VDS = VDSS 50 μA

VGS = 0V TJ = 125°C 1.5 mA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.05 Ω

G = Gate D = Drain

S = Source TAB = Drain

TO-268 (IXFT)

TO-247 (IXFH)

TAB

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH12N100F

IXFT12N100F

Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 8 12 S

Ciss 2700 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 305 pF

Crss 93 pF

td(on) 12 ns

tr 9.8 ns

td(off) 31 ns

tf 12 ns

Qg(on) 77 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 nC

Qgd 42 nC

RthJC 0.42 °C/W

RthCS (TO-247) 0.21 °C/W

Source-Drain Diode Characteristic Values

TJ = 25°C unless otherwise specified) Min. Typ. Max.

ISVGS = 0V 12 A

ISM Repetitive, pulse width limited by TJM 48 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr 250 ns

QRM 0.8 μC

IRM 7.0 A

IF = 12A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

∅ P

TO-247 (IXFH) Outline

TO-268 Outline

Min Recommended Footprint

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 2Ω (External)