IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 63 * Fast Switching Qgs (nC) 9.3 * Ease of Paralleling 32 * Simple Drive Requirements Qgd (nC) Configuration Single DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D COMPLIANT * Compliant to RoHS Directive 2002/95/EC D G Available * Repetitive Avalanche Rated 0.85 S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF840PbF SiHF840-E3 IRF840 SiHF840 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 20 V Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID UNIT 8.0 5.1 A IDM 32 1.0 W/C EAS 510 mJ Currenta IAR 8.0 A Repetitive Avalanche Energya EAR 13 mJ Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 125 W dV/dt 3.5 V/ns TJ, Tstg - 55 to + 150 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.78 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 Gate-Source Threshold Voltage ID = 4.8 Ab A - - 0.85 gfs VDS = 50 V, ID = 4.8 Ab 4.9 - - S Input Capacitance Ciss VGS = 0 V, - 1300 - Output Capacitance Coss VDS = 25 V, - 310 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 120 - Total Gate Charge Qg - - 63 Gate-Source Charge Qgs - - 9.3 Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V Dynamic VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13b pF nC Gate-Drain Charge Qgd - - 32 Turn-On Delay Time td(on) - 14 - - 23 - - 49 - - 20 - - 4.5 - - 7.5 - - - 8.0 - - 32 - - 2.0 V - 460 970 ns - 4.2 8.9 C Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VDD = 250 V, ID = 8 A Rg = 9.1 , RD = 31 , see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 8 A, VGS = 0 Vb TJ = 25 C, IF = 8 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) VGS 101 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V 100 25 C 100 20 s Pulse Width VDS = 50 V 20 s Pulse Width TC = 25 C 100 101 4 VDS, Drain-to-Source Voltage (V) 91070_01 ID, Drain Current (A) 4.5 V 100 20 s Pulse Width TC = 150 C 100 91070_02 101 VDS, Drain-to-Source Voltage (V) 91070_04 Fig. 2 - Typical Output Characteristics, TC = 150 C 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 5 VGS, Gate-to-Source Voltage (V) 91070_03 Fig. 1 - Typical Output Characteristics, TC = 25 C 101 150 C 101 ID, Drain Current (A) ID, Drain Current (A) Top 3.0 2.5 ID = 8.0 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 2500 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 2000 Ciss 1500 1000 Coss 500 Crss 101 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VDS = 400 V VDS = 100 V 8 4 For test circuit see figure 13 0 15 30 45 60 Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 1.4 1.2 10 s 2 10 100 s 5 1 ms 2 1 10 ms 5 TC = 25 C TJ = 150 C Single Pulse 2 0.1 0.1 75 QG, Total Gate Charge (nC) 1.0 Operation in this area limited by RDS(on) 5 VDS = 250 V 0.8 VSD, Source-to-Drain Voltage (V) 102 16 12 0.6 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 8.0 A 91070_06 VGS = 0 V 91070_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 0 25 C 0.4 VDS, Drain-to-Source Voltage (V) 20 150 C 101 100 0 100 91070_05 ISD, Reverse Drain Current (A) Vishay Siliconix 91070_08 2 5 1 2 5 10 2 5 102 2 5 103 2 5 104 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 Vishay Siliconix RD VDS VGS 8.0 D.U.T. ID, Drain Current (A) RG 6.0 + - VDD 10 V Pulse width 1 s Duty factor 0.1 % 4.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (C) 91070_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-3 10-5 91070_11 10-4 10-3 10-2 0.1 1 10 102 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD VDS 10 V 0.01 tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID 3.6 A 5.1 A Bottom 8.0 A Top 1000 800 600 400 200 0 VDD = 50 V 25 91070_12c 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS + QGD VG D.U.T. - VDS VGS 3 mA Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840, SiHF840 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91070. Document Number: 91070 S11-0506-Rev. C, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q OP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 OP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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