2N2904(A) and 2N2905(A) Qualified Levels: JAN, JANTX, JANTXV and JANS PNP SWITCHING SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications. These devices are also available in a TO-5 package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N2904 through 2N2905A series. * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. TO-39 (TO-205AD) Package (See part nomenclature for all available options.) * RoHS compliant versions available (commercial grade only). Also available in: TO-5 package (long-leaded) 2N2904AL & 2N2905AL APPLICATIONS / BENEFITS * General purpose transistors for high speed switching applications. * Military and other high-reliability applications. MAXIMUM RATINGS Parameters / Test Conditions Symbol Value 2N2904 2N2904A 2N2905 2N2905A 40 60 Unit Collector-Emitter Voltage V CEO Collector-Base Voltage V CBO 60 V Emitter-Base Voltage V EBO 5.0 V Thermal Resistance Junction-to-Ambient R JA 195 o C/W R JC 50 o C/W IC 600 mA PT 0.8 3.0 W TJ & T stg -65 to +200 C Thermal Resistance Junction-to-Case Collector Current Total Power Dissipation (1) @ T A = +25 C (2) @ T C = +25 C Operating & Storage Junction Temperature Range Notes: 1. For derating, see figures 1 and 2. 2. For thermal impedance, see figures 3 and 4. T4-LDS-0186, Rev. 2 (121219) (c)2012 Microsemi Corporation V MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 2N2904(A) and 2N2905(A) MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin (commercial grade only). MARKING: Part number, date code, manufacturer's ID. POLARITY: PNP (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2904 A (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Electrical Parameter Modifier JEDEC type number (see Electrical Characteristics table) Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS-0186, Rev. 2 (121219) (c)2012 Microsemi Corporation Page 2 of 7 2N2904(A) and 2N2905(A) ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Current I C = 10 mA 2N2904, 2N2905 2N2904A, 2N2905A Collector-Emitter Cutoff Voltage V CE = 40 V 2N2904, 2N2905 V CE = 60 V 2N2904A, 2N2905A Collector-Base Cutoff Current V CB = 60 V All Types V CB = 50 V 2N2904, 2N2905 2N2904A, 2N2905A V CB = 50 V @ T A = +150 C 2N2904, 2N2905 2N2904A, 2N2905A Emitter-Base Cutoff Current V EB = 3.5 V V EB = 5.0 V ON CHARACTERISTICS Symbol Min. V (BR)CEO 40 60 Unit V I CES 1.0 A I CBO1 10 A I CBO2 20 10 nA nA I CBO3 20 10 A A I EBO 50 10 nA A (1) Forward-Current Transfer Ratio I C = 0.1 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A 20 35 40 75 I C = 1.0 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A I C = 10 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A I C = 150 mA, V CE = 10 V 2N2904, 2N2904A 2N2905, 2N2905A 40 100 I C = 500 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A 20 30 40 50 T4-LDS-0186, Rev. 2 (121219) Max. 25 50 40 100 h FE (c)2012 Microsemi Corporation 175 450 175 450 35 75 40 100 120 300 Page 3 of 7 2N2904(A) and 2N2905(A) ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted (continued) Parameters / Test Conditions (1) ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA I C = 500 mA, I B = 50 mA Base-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA I C = 500 mA, I B = 50 mA Symbol Min. Max. Unit V CE(sat) 0.4 1.6 V V BE(sat) 1.3 2.6 V Max. Unit (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%. DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward-Current Transfer Ratio I C = 1.0 mA, V CE = 10 2N2904 V, f = 1.0 kHz 2N2905 2N2904A, 2N2905A Small-Signal Short-Circuit Forward-Current Transfer Ratio I C = 50 mA, V CE = 20 V, f = 100 MHz Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1.0MHz Iutput Capacitance V EB = 2.0 V, I C = 0, 100 kHz f 1.0MHz Symbol Min. h fe 25 50 40 |h fe | 2.0 C obo 8.0 pF C ibo 30 pF Max. Unit on 45 ns off 300 ns SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Turn-On Time t Turn-Off Time t T4-LDS-0186, Rev. 2 (121219) (c)2012 Microsemi Corporation Min. Page 4 of 7 2N2904(A) and 2N2905(A) DC Operation Maximum Rating (W) GRAPHS T a (C) (Ambient) DC Operation Maximum Rating (W) FIGURE 1 Derating (R JA ) PCB Tc (C) (Case) FIGURE 2 Derating (R JA ) PCB T4-LDS-0186, Rev. 2 (121219) (c)2012 Microsemi Corporation Page 5 of 7 2N2904(A) and 2N2905(A) o Theta ( C/W) GRAPHS (continued) Time (s) FIGURE 3 o Theta ( C /W) Thermal impedance graph (R JA ) Time (s) FIGURE 4 Thermal impedance graph (R JA ) T4-LDS-0186, Rev. 2 (121219) (c)2012 Microsemi Corporation Page 6 of 7 2N2904(A) and 2N2905(A) PACKAGE DIMENSIONS CD CH HD LC Dimensions Millimeters Min Max Min Max 0.305 0.335 7.75 8.51 0.240 0.260 6.10 6.60 0.335 0.370 8.51 9.40 0.200 TP 5.08 TP LD 0.016 0.021 0.41 0.53 7, 8 LL LU 0.500 0.016 0.750 0.019 12.70 0.41 19.05 0.48 7, 8, 12 7, 8 1.27 7, 8 Symbol Inch L1 0.050 L2 0.250 6.35 P Q TL TW r 0.100 2.54 0.050 0.029 0.045 0.028 0.034 0.010 45 TP 1.27 0.74 1.14 0.71 0.86 0.25 45 TP Note 6 7, 8 5 4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 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