T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 1 of 7
2N2904(A) and 2N2905(A)
Availa ble on
commercial
versions
PNP SWITCHING SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/290
Qualified Levels:
JAN, JANT X, JANTXV
and JANS
DESCRIPTION
This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS
level for high-reliability appl icati ons . These devices are also available in a TO-5 package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long-leaded)
2N2904AL & 2N2905AL
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N2904 thr ough 2N 2905A series.
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• General purpo se tr an si stors for high sp eed switching applications.
• Military and other high-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
Value
Unit
2N2904
2N2905
2N2904A
2N2905A
Collector-Emitter Voltage VCEO 40 60 V
V
CBO
60
V
V
EBO
5.0
V
R
ӨJA
195
oC/W
Thermal Resi stan ce Jun cti on-to-Case RӨJC 50
o
C/W
I
C
600
mA
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C (2) PT 0.8
3.0 W
Operating & Storage Junction Temperature Range
T
J
&
Tstg
-65 to +200 °C
Notes: 1. For derating, see figures 1 and 2.
2. For thermal impedance, see figures 3 and 4.
T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 2 of 7
2N2904(A) and 2N2905(A)
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant w ith pur e mat te-tin
(commercial grade only).
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: PNP (see package outline).
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N2904 A (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Electrical Parameter Modifier
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter.
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 3 of 7
2N2904(A) and 2N2905(A)
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
V(BR)CEO
V
I
C
= 10 mA
2N2904, 2N29 05
2N2904A, 2N2905A
40
60
Collector-Emitter Cutoff Voltage
V
CE
= 40 V
VCE = 60 V
2N2904, 2N29 05
2N2904A, 2N2905A
ICES 1.0 µA
Collector-Base Cutoff Current
V
CB
= 60 V
All Types
I
CBO1
10
µA
V
CB
= 50 V
2N2904, 2N29 05
2N2904A, 2N2905A
ICBO2
20
10
nA
nA
V
CB
= 50 V @ T
A
= +150 ºC
2N2904, 2N29 05
2N2904A, 2N2905A
I
CBO3
20
10
µA
µA
Emitter-Base Cutoff Current
VEB = 3.5 V
V
EB
= 5.0 V IEBO
50
10
nA
µA
ON CHA RACTERISTICS (1)
Forward-Current Transfer Ratio
hFE
I
C
= 0.1 mA, V
CE
= 10 V
2N2904
2N2905
2N2904A
2N2905A
20
35
40
75
I
C
= 1.0 mA, V
CE
= 10 V
2N2904
2N2905
2N2904A
2N2905A
25
50
40
100
175
450
175
450
I
C
= 10 mA, V
CE
= 10 V
2N2904
2N2905
2N2904A
2N2905A
35
75
40
100
I
C
= 150 mA, V
CE
= 10 V
2N2904, 2N29 04 A
2N2905, 2N29 05 A
40
100
120
300
I
C
= 500 mA, V
CE
= 10 V
2N2904
2N2905
2N2904A
2N2905A
20
30
40
50
T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 4 of 7
2N2904(A) and 2N2905(A)
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (1) (continued)
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
Base-Emitter Saturation Voltage
VBE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
DYNAMIC CHARA CTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-C ircuit Forward-Current
Transfer Ratio
I
C
= 1.0 mA, V
CE
= 10
V, f = 1.0 kHz
2N2904
2N2905
2N2904A, 2N2905A
hfe
25
50
40
Small-Signal Short-C ircuit Forward-Current
Transfer Ratio
|hfe| 2.0
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
Output Capac ita nc e
Cobo
pF
V
CB
= 10 V, I
E
= 0,
100 kHz ≤ f ≤ 1.0MHz
8.0
Iutput Capacitance
Cibo
pF
V
EB
= 2.0 V, I
C
= 0,
100 kHz ≤ f ≤ 1.0MHz
30
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time ton 45 ns
Turn-Off Time toff 300 ns
T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 5 of 7
2N2904(A) and 2N2905(A)
GRAPHS
Ta (°C) (Ambient)
FIGURE 1
Derating (RθJA) PCB
Tc (ºC) (Case)
FIGURE 2
Derating (RθJA) PCB
DC Operation Maximum Rating (W)
DC Operation Maximum Rating (W)
T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 6 of 7
2N2904(A) and 2N2905(A)
GRAPHS (continued)
Time (s)
FIGURE 3
Thermal impedance graph (RθJA)
Time (s)
FIGURE 4
Thermal impedance graph (RθJA)
Theta (oC/W)
Theta (oC /W)
T4-LDS-0186, Rev. 2 (121219) ©2012 Microsemi Corporation Page 7 of 7
2N2904(A) and 2N2905(A)
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. For “L” suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD 0.016 0.021 0.41 0.53 7, 8
LL
0.500
0.750
12.70
19.05
7, 8, 12
LU
0.016
0.019
0.41
0.48
7, 8
L1 0.050 1.27 7, 8
L2 0.250 6.35 7, 8
P
0.100
2.54
Q
0.050
1.27
5
TL
0.029
0.045
0.74
1.14
4
TW
0.028
0.034
0.71
0.86
3
r
0.010
0.25
10
α 45° TP 45° TP 6