HAT2139H Silicon N Channel Power MOS FET Power Switching REJ03G0055-0500 Rev.5.00 Sep 20, 2005 Features * * * * Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C 3. Value at Tch = 25C, Rg 50 Rev.5.00 Sep 20, 2005 page 1 of 7 Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 40 20 20 80 20 Unit V V A A A IAP Note 3 EAR Note 3 Pch Note2 Tch Tstg 10 8 15 150 -55 to +150 A mJ W C C HAT2139H Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 40 20 Typ -- -- Max -- -- Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd -- -- 2.0 -- -- 15 -- -- -- -- -- -- -- -- -- 9.0 11.0 25 2000 290 175 30 8 5 10 1 3.5 11.5 15.0 -- -- -- -- -- -- -- A A V m m S pF pF pF nC nC nC VGS = 16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 7 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time Rise time Turn-off delay time td(on) tr td(off) -- -- -- 17 23 58 -- -- -- ns ns ns VGS = 10 V, ID = 10 A, VDD 10 V, RL = 1.0 , Rg = 4.7 Fall time Body-drain diode forward voltage tf VDF -- -- -- 10 0.83 50 -- 1.08 -- ns V ns IF = 20 A, VGS = 0 Note4 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Body-drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00 Sep 20, 2005 page 2 of 7 trr VDD = 10 V, VGS = 10 V, ID = 20 A IF = 20 A, VGS = 0 diF/ dt = 50 A/ s HAT2139H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area ID (A) 1000 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 50 100 150 Case Temperature 10 s 10 0 1 s m s 100 DC PW Op = 10 10 er at ms ion Operation in this area is 1 limited by RDS(on) Tc = 25C 1 shot Pulse 0.1 0.1 1 200 Drain to Source Voltage Tc (C) Typical Output Characteristics 10 V 4.5 V 100 VDS (V) Typical Transfer Characteristics 20 4.2 V 16 4.0 V 12 ID (A) VDS = 10 V Pulse Test 16 12 3.8 V 8 4 VGS = 3.5 V Drain Current Drain Current ID (A) 20 10 8 25C Tc = 75C -25C 4 Pulse Test 0 2 4 6 8 Drain to Source Voltage 0 10 300 200 100 ID = 10 A 5A 2A 0 4 8 12 Gate to Source Voltage Rev.5.00 Sep 20, 2005 page 3 of 7 16 20 VGS (V) 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (m) Drain to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 4 Gate to Source Voltage VDS (V) 400 2 100 Pulse Test 50 20 VGS = 7 V 10 10 V 5 2 1 1 3 10 Drain Current 30 ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (m) HAT2139H 35 Pulse Test 30 25 ID = 10 A 20 2 A, 5 A 15 VGS = 7 V 10 ID = 2 A, 5 A, 10 A 10 V 5 0 -25 0 25 50 75 100 125 150 Case Temperature Tc 100 Tc = -25C 10 1 75C 25C 0.1 VDS = 10 V Pulse Test 0.01 0.01 (C) 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 100 50 20 VGS = 0 f = 1 MHz 3000 Ciss 1000 300 Coss di/dt = 50 A/s VGS = 0, Ta = 25C Crss 100 0.3 1 3 10 Reverse Drain Current 30 100 0 IDR (A) 10 20 8 10 0 4 VDD = 25 V 10 V 5V 10 20 Gate Charge Rev.5.00 Sep 20, 2005 page 4 of 7 0 30 40 Qg (nc) 50 VGS (V) 16 12 VDS 40 1000 Switching Time t (ns) 30 VDD = 25 V 10 V 5V Gate to Source Voltage VDS (V) Drain to Source Voltage VGS 40 30 Switching Characteristics 20 ID = 20 A 20 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 100 10 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 10 0.1 1 0.1 300 100 td(off) 30 td(on) 10 tr tf 3 1 0.1 VGS = 10 V , VDS = 10 V Rg = 4.7 , duty 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2139H (mJ) Reverse Drain Current vs. Source to Drain Voltage 10 10 V Repetitive Avalanche Energy EAR Reverse Drain Current IDR (A) 20 Maximum Avalanche Energy vs. Channel Temperature Derating 16 5V 12 VGS = 0.5 V 8 4 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) IAP = 10 A VDD = 15 V duty < 0.1 % Rg 50 8 6 4 2 0 25 50 75 100 125 150 Channel Temperature Tch (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 8.33C/ W, Tc = 25C 0.1 0.05 PDM 0.02 1 0.0 0.03 0.01 10 D= lse t ho PW T PW T pu 1s 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L * IAP2 * VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 0 Rev.5.00 Sep 20, 2005 page 5 of 7 VDD HAT2139H Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) Rev.5.00 Sep 20, 2005 page 6 of 7 10% tr 90% td(off) tf HAT2139H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 0.2 +0.05 4.2 6.1 -0.3 +0.1 3.95 5 4 0 - 8 +0.25 +0.05 0.20 -0.03 0.6 -0.20 1.3 Max 1 1.1 Max +0.03 0.07 -0.04 3.3 1.0 0.25 -0.03 0.75 Max 0.10 1.27 0.40 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2139H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 20, 2005 page 7 of 7 Sales Strategic Planning Div. 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