AFT21S140W02SR3 AFT21S140W02GSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 32 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ = 800 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 19.0 33.9 6.7 --32.4 -- 1 5
2140 MHz 19.3 33.5 6.7 --32.6 -- 2 4
2170 MHz 19.4 33.2 6.7 --32.7 -- 2 2
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT21S140W02S
Rev. 0, 2/2014
Freescale Semiconductor
Technical Data
2110–2170 MHz, 32 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT21S140W02SR3
AFT21S140W02GSR3
Figure 1. Pin Connections
NI--780S--2L
AFT21S140W02SR3
NI--780GS--2L
AFT21S140W02GSR3
(Top View)
RFin/VGS 21
RFout/VDS
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +125 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 124
0.70
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 32 W CW, 28 Vdc, IDQ = 800 mA, 2140 MHz
RJC 0.59 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 146 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 800 mAdc, Measured in Functional Test)
VGS(Q) 1.5 1.9 2.3 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.4Adc)
VDS(on) 0.1 0.15 0.3 Vdc
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 800 mA, Pout = 32 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 18.7 19.3 21.7 dB
Drain Efficiency D32.0 33.5 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.2 6.7 —dB
Adjacent Channel Power Ratio ACPR —--32.6 --30.5 dBc
Input Return Loss IRL —-- 2 4 -- 9 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT21S140W02SR3 AFT21S140W02GSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 800 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 158 W CW(1) Output Power
(3 dB Input Overdrive from 112 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 800 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —112 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
—-- 1 7 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —150 —MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =32WAvg. GF—0.3 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.03 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (1)
P1dB —0.01 —dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
Figure 2. AFT21S140W02SR3 Test Circuit Component Layout
*C1, C2, C3, C4, C5, C12, C13 and C18 are mounted vertically.
C1* C2*
C3*
C4*
C5*
C12*
C13*
C18*
C6
C7
C8
C9
C10
C11
C14
C15
C16
C17
C19
C20
AFT21S140W02GS
Rev. 3
D57393
CUT OUT AREA
VGG
VGG
VDD
VDD
R1
R2
Table 5. AFT21S140W02SR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C4, C5, C18 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC
C2 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C3 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC
C6, C7, C8, C9, C10, C11,
C14, C15
10 F, Chip Capacitors GRM32ER61H106KA12L Murata
C12, C13 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C16 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C17 0.9 pF Chip Capacitor ATC100B0R9BT500XT ATC
C19, C20 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1, R2 2.37 , 1/4 W Chip Resistors CRCW12062R37FNEA Vishay
PCB Rogers RO4350B, 0.020,r=3.66 D57393 MTL
AFT21S140W02SR3 AFT21S140W02GSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2060
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 32 Watts Avg.
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
18
20
19.8
19.6
--34.5
38
36
34
32
-- 3 2
--32.5
-- 3 3
--33.5
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
2080 2100 2120 2140 2160 2180 2200 2220
30
-- 3 4
-- 3 0
ACPR (dBc)
PARC
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 5
0
-- 1 5
-- 3 0
-- 6 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 5 IM7--L
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
16
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
824 32 48
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 3 d B = 3 1 W
40
D
ACPR
PARC
ACPR (dBc)
-- 6 0
0
-- 1 0
-- 2 0
-- 4 0
-- 3 0
-- 5 0
19.6
Gps, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
Gps
-- 1 d B = 1 6 W
-- 2 d B = 2 3 W
IRL
PARC (dB)
--3.25
--3.05
-- 3 . 1
--3.15
-- 3 . 2
-- 3 . 3
-- 5
Gps
IM3--L
1
VDD =28Vdc,I
DQ = 800 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
VDD =28Vdc,P
out = 96 W (PEP)
IDQ = 800 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
100
IM5--L
IM7--U
IM3--U
IM5--U
VDD =28Vdc,P
out =32W(Avg.),I
DQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 0
-- 3 0
0
30
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
25
20
10 100 200
10
-- 7 0
ACPR (dBc)
15
10
5
-- 1 0
-- 4 0
-- 5 0
-- 6 0
Figure 7. Broadband Frequency Response
0
30
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 800 mA
20
15
10
GAIN (dB)
25
5
1800 1920 2040 2160 2280 2400 2520 2640 2760
-- 4 0
20
10
0
-- 1 0
-- 2 0
IRL (dB)
-- 3 0
Gain
IRL
VDD =28Vdc,I
DQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
2140 MHz
2110 MHz
2170 MHz
2140 MHz
2170 MHz
2110 MHz
2170 MHz
AFT21S140W02SR3 AFT21S140W02GSR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQ = 770 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.44 + j8.03 3.92 - j6.59 18.9 51.8 152 54.3 -10
2140 6.03 - j8.06 6.63 + j8.08 3.84 - j6.22 19.0 51.9 156 55.5 -11
2170 7.23 - j7.37 7.86 + j7.65 3.89 - j6.16 19.2 52.0 158 56.6 -11
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.92 + j8.68 3.92 - j7.04 16.8 52.8 190 57.5 -16
2140 6.03 - j8.06 7.42 + j8.66 3.99 - j6.82 16.9 52.8 193 58.4 -17
2170 7.23 - j7.37 8.93 + j7.96 3.96 - j6.86 16.9 52.9 193 58.1 -17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 7. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQ = 770 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.45 + j8.49 8.22 - j1.63 21.7 49.5 89 64.0 -18
2140 6.03 - j8.06 6.72 + j8.52 6.98 - j1.62 21.7 49.7 93 64.4 -18
2170 7.23 - j7.37 8.07 + j8.09 5.87 - j1.79 21.7 50.0 99 65.8 -19
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.83 + j8.94 6.85 - j4.39 18.9 51.6 143 66.0 -22
2140 6.03 - j8.06 7.35 + j8.95 6.31 - j4.25 18.8 51.7 148 66.5 -23
2170 7.23 - j7.37 9.04 + j8.28 6.47 - j2.38 19.6 50.9 122 67.0 -27
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
Figure 8. P1dB Load Pull Output Power Contours (dBm) Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
REAL ()
IMAGINARY ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
51
50.5
50
51.5
49.5
60
58
56
54
52
50
48
19.5
20
19
18.5
18
20.5
-- 2 4 -- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1 4
-- 1 2
-- 1
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
P
E
48.5
48
49
P
E
P
E
62
64
21
21.5
22
P
E
AFT21S140W02SR3 AFT21S140W02GSR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
Figure 12. P3dB Load Pull Output Power Contours (dBm) Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
78
610
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
REAL ()
IMAGINARY ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
51
50.5
50
51.5
52
62
60
58
56
54
52
50
64
19.5
20
19
18.5
18
17.5
17
16.5
-- 2 6
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
P
E
P
E
P
E
52.5
49.5 49.5
49
P
E
66
16
-- 2 8
-- 3 0
-- 3 2
10
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
PACKAGE DIMENSIONS
AFT21S140W02SR3 AFT21S140W02GSR3
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
AFT21S140W02SR3 AFT21S140W02GSR3
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2014 Initial Release of Data Sheet
AFT21S140W02SR3 AFT21S140W02GSR3
15
RF Device Data
Freescale Semiconductor, Inc.
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