For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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LINEAR & POWER AMPLIFIERS - SMT
HMC591LP5 / 591LP5E
v02.0107
General Description
Features
Functional Diagram
The HMC591LP5 & HMC591LP5E are high dynamic
range GaAs PHEMT MMIC 2 Watt Power Ampli ers
which operate from 6 to 9.5 GHz. The ampli er
provides 18 dB of gain, +33 dBm of saturated power,
and 19% PAE from a +7V supply. This 50 Ohm mat-
ched ampli er does not require any external
components and the RF I/Os are DC blocked for
robust operation. For applications which require
optimum OIP3, Idd should be set for 940 mA, to
yield +41 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
Saturated Output Power: +33 dBm @ 20% PAE
Output IP3: +41 dBm
Gain: 18 dB
DC Supply: +7.V @ 1340 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm2
Electrical Speci cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Typical Applications
The HMC591LP5 / HMC591LP5E is ideal for use as a
power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 6 - 8 6 - 9.5 GHz
Gain 16 19 15 18 dB
Gain Variation Over Temperature 0.05 0.05 dB/ °C
Input Return Loss 14 12 dB
Output Return Loss 12 10 dB
Output Power for 1 dB
Compression (P1dB) 30 32 30 33 dBm
Saturated Output Power (Psat) 32.5 33 dBm
Output Third Order Intercept (IP3)[2] 41 41 dBm
Supply Current (Idd) 1340 1340 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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HMC591LP5 / 591LP5E
v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-15
-5
5
15
25
456789101112
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
456789101112
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
26
28
30
32
34
36
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
26
28
30
32
34
36
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
456789101112
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
8
12
16
20
24
28
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Power Compression @ 8 GHz,
7V @ 1340 mA
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
Output IM3, 7V @ 940 mA Output IM3, 7V @ 1340 mA
10
20
30
40
50
60
70
80
90
100
-20 -16 -12 -8 -4 0 4 8
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
IM3 (dBc)
Pin/Tone (dBm)
0
5
10
15
20
25
30
35
-14 -10 -6 -2 2 6 10 14 18
Pout
Gain
PAE
Pout(dBm), GAIN (dB), PAE(%)
INPUT POWER (dBm)
0
20
40
60
80
100
-20 -16 -12 -8 -4 0 4 8
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
IM3 (dBc)
Pin/Tone (dBm)
26
30
34
38
42
46
6 6.5 7 7.5 8 8.5 9 9.5 10
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
Psat vs. CurrentP1dB vs. Current
26
28
30
32
34
36
6 6.5 7 7.5 8 8.5 9 9.5 10
940 mA
1140 mA
1340 mA
Psat (dBm)
FREQUENCY (GHz)
26
28
30
32
34
36
6 6.5 7 7.5 8 8.5 9 9.5 10
940 mA
1140 mA
1340 mA
P1dB (dBm)
FREQUENCY (GHz)
HMC591LP5 / 591LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Reverse Isolation
vs. Temperature, 7V @ 1340 mA Power Dissipation
-80
-60
-40
-20
0
678910
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 8 GHzGain & Power vs. Supply Current @ 8 GHz
16
20
24
28
32
36
6.5 7 7.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat(dBm)
Vdd SUPPLY VOLTAGE (Vdc)
16
20
24
28
32
36
940 1140 1340
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat(dBm)
Idd SUPPLY CURRENT (mA)
6
7
8
9
10
-14 -10 -6 -2 2 6 10 14
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 75 °C)
(derate 104.3 mW/°C above 75 °C) 10.43 W
Thermal Resistance
(channel to package bottom) 9.59 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (V) Idd (mA)
+6.5 1350
+7.0 1340
+7.5 1330
Typical Supply Current vs. Vdd
Note: Ampli er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC591LP5 / 591LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC591LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H591
XXXX
HMC591LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H591
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
Outline Drawing
HMC591LP5 / 591LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1, 2, 6 - 8,
10 - 12, 14, 15,
17 - 19, 23, 24,
26, 27, 29 - 31
N/C Not connected.
3, 5, 20, 22 GND Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
4RFIN This pad is AC coupled and
matched to 50 Ohms.
9Vgg
Gate control for ampli er. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Ampli er Biasing Procedure”
Application Note. External bypass capacitors of
100 pF and 2.2 μF are required.
13, 16, 25, 28, 32 Vdd 1-5 Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF and 2.2 μF are required.
21 RFOUT This pad is AC coupled and
matched to 50 Ohms.
HMC591LP5 / 591LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
Application Circuit
v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Component Value
C1 - C6 100pF
C7 - C12 2.2μF
HMC591LP5 / 591LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108190 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 - C6 100pF Capacitor, 0402 Pkg.
C7 - C12 2.2 μF Capacitor, 1206 Pkg
U1 HMC591LP5 / HMC591LP5E
PCB [2] 109001 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC591LP5 / 591LP5E
