BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
1
MAY 1993 - REVISED JUNE 2013
Designed for Complementary Use with
RoHS compliant*
BD646, BD648, BD650 and BD652
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum hFE of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BD645
BD647
BD649
BD651
VCBO
80
100
120
140
V
Collector-emitter voltage (IB = 0)
BD645
BD647
BD649
BD651
VCEO
60
80
100
120
V
Emitter-base voltage VEBO 5 V
Continuous collector current IC8 A
Peak collector current (see Note 1) ICM 12 A
Continuous base current IB0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 62.5 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W
Unclamped inductive load energy (see Note 4) ½LIC250 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
How to Order
Device Package Carrier
BDxxx TO-220 Tube .BDxxx-S
Order As
Insert xxx transistor type number 645, 647, 649, etc.
OBSOLETE
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
2MAY 1993 - REVISED JUNE 2013
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 30 mA IB = 0 (see Note 5)
BD645
BD647
BD649
BD651
60
80
100
120
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
IB= 0
IB= 0
IB= 0
IB= 0
BD645
BD647
BD649
BD651
0.5
0.5
0.5
0.5
mA
ICBO
Collector cut-off
current
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 40 V
VCB = 50 V
VCB = 60 V
VCB = 70 V
IE= 0
IE= 0
IE= 0
IE= 0
IE= 0
IE= 0
IE= 0
IE= 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
mA
IEBO
Emitter cut-off
current VEB = 5 V IC= 0 (see Notes 5 and 6) 5 mA
hFE
Forward current
transfer ratio VCE = 3 V IC= 3 A (see Notes 5 and 6) 750
VCE(sat)
Collector-emitter
saturation voltage
IB = 12 mA
IB = 50 mA
IC= 3 A
IC= 5 A (see Notes 5 and 6) 2
2.5 V
VBE(sat)
Base-emitter
saturation voltage IB = 50 mA IC= 5 A (see Notes 5 and 6) 3 V
VBE(on)
Base-emitter
voltage VCE = 3 V IC= 3 A (see Notes 5 and 6) 2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.0 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
OBSOLETE
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
3
MAY 1993 - REVISED JUNE 2013
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS130AD
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0 TCS130AB
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AC
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
OBSOLETE
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
4MAY 1993 - REVISED JUNE 2013
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0.01
0·1
1·0
10 SAS130AC
BD645
BD647
BD649
BD651
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS130AC
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
OBSOLETE
