NJG1116BHB3 2.1GHz Band LNA GaAs MMIC GENERAL DESCRIPTION NJG1116BHB3 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone .This IC has the function which passes LNA, and high gain mode or low gain mode can be chosen. An ultra small and ultra thin package of USB8 is adopted. PACKAGE OUTLINE NJG1116BHB3 FEATURES Low voltage operation Low current consumption High gain Low noise figure Pout at 1dB Gain Compression point High input IP3 Small package USB8-B3 +2.7V typ. 2.0mA typ. @VCTL=2.7V 2uA typ. @VCTL=0V 14.4dB typ. @VCTL=2.7V, fRF =2140MHz 1.5dB typ. @VCTL=2.7V, fRF=2140MHz -14.5dBm typ. @VCTL=2.7V, fRF=2140MHz +11.0dBm typ. @VCTL=0V, fRF=2140MHz -3dBm typ. @VCTL=2.7V, fRF=2140MHz +3dBm typ. @VCTL=0V, fRF=2140MHz (Package size: 1.5mmx1.5mmx0.75mm) PIN CONFIGURATION (Top View) 4 5 3 6 2 7 1 Pin Connection 1.VINV 2.GND 3.RF OUT 4.GND 5.RF IN 6.GND 7. VCTL 8. GND 8 1 Pin INDEX Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver.2004-10-04 -1- NJG1116BHB3 ABSOLUTE MAXIMUM RATINGS (Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Operating voltage VDD 5.0 V Inverter supply voltage VINV 5.0 V Control voltage VCTL 5.0 V Input power Pin +15 dBm Power dissipation PD 135 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+125 C VDD=2.7V ELECTRICAL CHARACTERISTICS 1 (DC) (VDD=VINV=2.7V, Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.5 2.7 4.5 V Inverter supply voltage VINV 2.5 2.7 4.5 V Control voltage (High) VCTL(H) 2.0 2.7 VINV+0.3 V Control voltage (Low) VCTL(L) 0 0 0.8 V Operating current1 IDD1 RF OFF, VCTL=2.7V - 2.0 2.7 mA Operating current2 IDD2 RFOFF, VCTL=0V - 2 30 uA Inverter current1 IINV1 RF OFF, VCTL=2.7V - 50 100 uA Inverter current2 IINV2 RF OFF, VCTL=0V - 110 200 uA Control current ICTL RF OFF, VCTL=2.7V - 20 50 uA -2- Ver.2004-10-04 NJG1116BHB3 ELECTRICAL CHARACTERISTICS 2 (LNA High Gain Mode) (VDD=VINV=2.7V, VCTL=2.7V, freq=2140MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Operating frequency Small signal gain1 SYMBOL CONDITIONS MIN TYP MAX UNITS freq 2110 2140 2170 MHz Gain1 13.2 14.4 15.7 dB Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point NF1 - 1.5 1.9 dB P-1dB(IN)1 -16.5 -14.5 - dBm -5.5 -3.0 - dBm RF Input VSWR1 VSWRI 1 - 1.7 2.3 - RF Output VSWR1 VSWRo1 - 1.8 2.6 - IIP3_1 f1=fRF, f2=fRF+100kHz, Pin=-36dBm ELECTRICAL CHARACTERISTICS 2 (LNA Low Gain Mode) (VDD=VINV=2.7V, VCTL=0V, freq=2140MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Operating frequency Small signal gain2 SYMBOL CONDITIONS MIN TYP MAX UNITS freq 2110 2140 2170 MHz Gain2 -5.0 -4.0 -2.5 dB Noise figure2 Pin at 1dB gain compression point2 Input 3rd order intercept point2 NF2 - 4.0 5.0 dB P-1dB(IN)2 +8.0 +11.0 - dBm -1.0 +3.0 - dBm RF Input VSWR2 VSWRI 2 - 2.0 2.3 - RF Output VSWR2 VSWRo2 - 1.5 2.0 - Ver.2004-10-04 IIP3_2 F1=fRF, f2=fRF+100kHz, Pin=-36dBm -3- NJG1116BHB3 TERMINAL INFOMATION No. SYMBOL DESCRIPTION 1 VINV Inverter voltage supplies terminal. 2 GND Ground terminal. (0V) 3 RFOUT 4 GND Ground terminal. (0V) 5 RFIN RF input terminal. The RF signal is input through external matching circuit connected to this terminal. A DC blocking capacitor is not required. 6 GND Ground terminal. (0V) 7 VCTL Control voltage supply terminal. The High level voltage of this terminal controls LNA High Gain Mode. The Low level voltage of this terminal controls LNA Low Gain Mode. 8 GND Ground terminal. (0V) RF output terminal. The RF signal is output through external matching circuit connected to this terminal. Please connected inductance L3 and power supply as shown in test circuit, since this terminal is also the terminal of LNA power supply. CAUTION 1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as low inductance as possible. TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) -4- VCTL Operating Current Bypass circuit LNA Mode L OFF ON Low Gain Mode H ON OFF High Gain Mode Ver.2004-10-04 NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) Gain vs. Pin Pout vs. Pin ( freq=2.14GHz, V =V INV =V o CTL ( freq=2.14GHz, V =2.7V, Ta=25 C ) 18 5 16 0 14 G ain(dB) Pout(dBm ) 10 DD -5 -10 =V INV =V o CTL =2.7V, Ta=25 C ) 12 10 -15 8 -20 6 4 -25 P-1dB(IN)=-13.3dBm P-1dB(IN)=-13.3dBm -30 -40 DD -35 -30 -25 -20 -15 -10 -5 2 -40 0 -35 -30 -25 DD IN V =V o C TL -10 -5 0 Pout, IM3 vs. Pin NF vs. frequency =V -15 Pin(dBm ) Pin(dBm ) (V -20 =2.7V, Ta=25 C ) ( freq=2.14GHz, V 4.0 DD =V INV =V o CTL =2.7V, Ta=25 C ) 20 3.5 0 Pout Pout,IM3 (dBm ) NF(dB) 3.0 2.5 2.0 1.5 NF -20 -40 -60 IM 3 1.0 -80 0.5 -100 0.0 2 2.05 2.1 2.15 2.2 2.25 2.3 -40 -35 -30 -25 OIP3, IIP3 vs. frequency DD =V INV =V =2.7V, Ta=25 C ) 13 (V 2 -8.0 1 -10.0 OIP3 12 -5 0 DD =V INV =V o CTL =2.7V, Ta=25 C ) P-1dB(IN) 0 11 -1 10 -2 9 -3 IIP3 P-1dB(IN) -12.0 IIP3 (dBm ) OIP3 (dBm ) -10 P-1dB(IN) vs. frequency o CTL 14 -14.0 -16.0 -18.0 8 -4 7 -5 -20.0 -6 -22.0 6 2.1 2.12 2.14 2.16 frequency(GHz) Ver.2004-10-04 -15 Pin (dBm ) frequency(GHz) ( df=100kHz, P in=-36dBm , V -20 2.18 2.2 2.1 2.12 2.14 2.16 2.18 2.2 frequency(GHz) -5- NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) G ain, NF vs. V ( freq=2.14GHz, V INV =V C TL OIP3, IIP3 vs. V DD ( freq=2.14+2.1401GHz, Pin=-36dBm , V =2.7V ) DD INV =V CTL =2.7V ) 4.5 15.0 3.0 4 14.0 2.0 15 3.5 13.0 14 3 13 2.5 12 2 17 16 12.0 0.0 11.0 -1.0 10.0 -2.0 -3.0 9.0 1.5 11 1.0 OIP3 IIP3 NF 10 9 2 2.5 3 3.5 V 4 4.5 8.0 0.5 7.0 ( freq=2.14GHz, V -5.0 2 5 2.5 3 3.5 INV =V C TL DD 4 =2.7V) ( freq=2.14GHz, V -8 3.5 -10 3 VSW Ri, VSW Ro 4 P-1dB(IN) -14 -16 5 INV =V DD CTL =2.7V ) VSW Ri V SW Ro 2.5 2 1.5 -18 1 -20 0.5 -22 4.5 (V) VSW R vs. V DD -6 -12 -4.0 V P-1dB(IN) vs. V P-1dB(IN)(dBm ) 1 (V) DD IIP3(dBm) OIP3(dBm ) NF (dB) Gain (dB ) Gain 0 2 2.5 3 3.5 V I (V INV DD =V C TL DD 4 4.5 5 2 (V) vs. V 2.5 3 3.5 V DD 4 4.5 5 (V) DD =2.7V, PRF=OFF) 4 3.5 2.5 I DD 2 I DD (mA) 3 1.5 1 0.5 0 2 2.5 3 3.5 V -6- DD 4 4.5 5 (V) Ver.2004-10-04 NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) Gain, NF vs. Tem perature ( freq=2.14G Hz, V DD =V INV =V C TL OIP3, IIP3 vs. Temperature ( freq=2.14+2.1401GHz, P in=-36dBm, V =2.7V ) DD =V INV =V CT L =2.7V ) 4.5 14.0 3.0 4 13.0 2.0 15 3.5 12.0 14 3 17 16 12 2 11 1.5 1.0 OIP3 11.0 0.0 10.0 -1.0 9.0 -2.0 IIP3 (dBm ) 2.5 NF OIP3 (dBm ) 13 NF (dB) Gain (dB) Gain -3.0 8.0 IIP3 10 9 -50 -25 0 25 50 75 6.0 -50 0.5 100 0 25 50 75 Ambient Temperature ( C) Ambient Tem perature ( C) P-1dB(IN) vs. Tem perature VSWR vs. Tem perature ( freq=2.14GHz, V DD =V INV =V CTL ( freq=2.14G Hz, V =2.7V ) -6 4 -8 3.5 -10 3 VSW Ri, VSW Ro P-1dB(IN) (dBm ) -25 P-1dB(IN) -12 -14 -16 0.5 25 50 75 100 o DD (V DD =V C TL =2.7V ) VS W R i VSW Ro 0 -50 -25 0 25 50 75 100 o Ambient Tem perature ( C ) I INV 1.5 -20 0 =V 2 1 -25 DD 2.5 -18 -22 -5.0 100 o o -50 -4.0 7.0 1 Ambient Temperature ( C) vs. Temperature =V INV =V CTL =2.7V, PRF=OFF) 4 3.5 3 DD 2 I DD (mA) I 2.5 1.5 1 0.5 0 -50 -25 0 25 50 75 100 o Ambient Tem perature ( C) Ver.2004-10-04 -7- NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) S11, S22 VSWR S11, S22 (100MHz~20GHz) -8- S21, S12 Zin, Zout S21, S12 (100MHz~20GHz) Ver.2004-10-04 NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) Gain vs. Pin Pout vs. Pin ( freq=2.14G Hz, V 10 DD =V INV =2.7V, V o CTL =0V, Ta=25 C ) ( freq=2.14G Hz, V 0 =V INV =2.7V, V o CTL =0V, Ta=25 C ) -2 -10 Gain(dB) Pout(dBm ) 0 DD -20 -4 -6 -30 -8 -40 P-1dB(IN)=+10.5dBm P-1dB(IN)=+10.5dBm -50 -40 -30 -20 -10 0 10 -10 -40 20 -30 -20 DD =V INV =2.7V, V ( freq=2.14G Hz, V o CTL =0V, Ta=25 C ) 10 20 DD =V IN V =2.7V, V o CTL =0V, Ta=25 C ) 20 8.0 7.0 0 5.0 Pout,IM 3 (dBm ) 6.0 NF(dB) 0 Pout, IM3 vs. Pin NF vs. frequency (V -10 Pin(dBm ) Pin(dBm ) NF 4.0 3.0 -20 Pout -40 -60 IM 3 2.0 -80 1.0 -100 0.0 2 2.05 2.1 2.15 2.2 2.25 2.3 -40 -30 -20 OIP3, IIP3 vs. frequency ( df=100kHz, Pin=-36dBm , V DD =V INV =2.7V, V CTL 12 2 10 (V =V INV =2.7V, V o CTL =0V, Ta=25 C ) 16.0 6 -4 4 -6 2 IIP3 -8 -10 2.14 2.16 frequency(G Hz) 2.18 2.2 P-1dB(IN) -2 IIP3 (dBm ) O IP3 (dBm ) DD 14.0 8 Ver.2004-10-04 10 18.0 OIP3 0 2.12 0 P-1dB(IN) vs. frequency o =0V, Ta=25 C ) 4 2.1 -10 Pin (dBm ) frequency(GHz) P-1dB (IN) 12.0 10.0 8.0 6.0 0 4.0 -2 2.0 2.1 2.12 2.14 2.16 2.18 2.2 frequency(GHz) -9- NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) G ain, NF vs. V ( freq=2.14GHz, V IN V =2.7V, V OIP3, IIP3 vs. V DD C TL ( freq=2.14+2.1401GHz, Pin=-20dBm , V =0V ) -2 -3 10 4.0 9 2.0 =0V ) 12.0 -6 6 -7 10.0 -2.0 8.0 -4.0 6.0 5 -6.0 4.0 4 -8.0 2.0 IIP3 NF -9 -10 3 3.5 V DD 4 4.5 ( freq=2.14G Hz, V 3 -10.0 2 -12.0 0.0 -2.0 2 5 2.5 3 3.5 (V) V P-1dB(IN) vs. V INV =2.7V, V C TL IIP3(dBm ) 7 OIP3(dBm ) -5 0.0 NF (dB) Gain (dB ) 8 -8 DD 4 IM D3 vs. V =0V ) -38 16 -40 14 5 DD ( freq=2.14+2.1401GHz, Pin=-20dBm , V 18 4.5 (V) DD IN V =2.7V, V C TL =0V ) -42 IMD3(dBc) P-1dB(IN)(dBm ) C TL O IP3 -4 2.5 =2.7V, V 14.0 G ain 2 DD IN V P-1dB(IN) 12 10 -44 IM D3 -46 8 -48 6 -50 4 -52 2 2.5 3 3.5 V DD INV 4.5 5 2 2.5 3 3.5 (V) VSW R vs. V ( freq=2.14G Hz, V 4 V I DD =2.7V, V C TL =0V ) (V 4 IN V DD =2.7V, V DD 4 5 (V) vs. V CTL 4.5 DD =0V, PRF=OFF) 10 VSW Ri VSW Ro 8 (uA) 3 2.5 6 DD 2 I VSW Ri, VSW Ro 3.5 4 1.5 I 1 DD 2 0.5 0 0 2 2.5 3 3.5 V - 10 - DD (V) 4 4.5 5 2 2.5 3 3.5 V DD 4 4.5 5 (V) Ver.2004-10-04 NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) G ain, NF vs. Temperature ( freq=2.14GHz, V DD =V INV =2.7V, V CTL OIP3, IIP3 vs. Temperature ( freq=2.14+2.1401GHz, Pin=-20dBm , V =0V) DD =V INV =2.7V, V CTL =0V) 10 4.0 14.0 9 2.0 12.0 -4 8 0.0 -5 7 -2 -3 -7 5 -8 4 10.0 OIP3 -2.0 8.0 -4.0 6.0 -6.0 4.0 -8.0 IIP3 (dBm) NF OIP3 (dBm ) 6 -6 NF (dB) G ain (dB) Gain 2.0 IIP3 -9 -10 -50 -25 0 25 50 75 3 -10.0 2 100 -12.0 0.0 -50 -25 o P-1dB(IN) (dBm ) =V INV =2.7V, V C TL 50 -2.0 100 75 Ambient Temperature ( C) VSWR vs. Tem perature P-1dB(IN) vs. Temperature DD 25 o Ambient Temperature ( C) ( freq=2.14GHz, V 0 =0V) ( freq=2.14G Hz, V 18 4 16 3.5 VSW Ri, VSW Ro 14 P -1dB (IN) 12 10 8 DD =V INV =2.7V, V C TL =0V) 3 VSW Ri VSW Ro 2.5 2 1.5 1 6 0.5 4 -50 -25 0 25 50 75 100 o DD (V DD -25 0 25 50 75 100 o Ambient Temperature ( C) I 0 -50 Ambient Temperature ( C) vs. Temperature =V INV =2.7V, V CTL =0V, PRF=OFF) 30 25 15 I DD (uA) 20 10 I DD 5 0 -50 -25 0 25 50 75 100 o Ambient Temperature ( C) Ver.2004-10-04 - 11 - NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) S11, S22 VSWR S11, S22 (100MHz~20GHz) - 12 - S21, S12 Zin, Zout S21, S12 (100MHz~20GHz) Ver.2004-10-04 NJG1116BHB3 TEST CIRCUIT (Top View) GND L2 5.1nH RF IN 4 RFIN RFOUT 5 L4 6.8nH C1 1.5pF RF OUT 3 L3 1.8nH L1 3.9nH VDD=2.7V VCTL=0V or 2.7V GND GND 6 2 VCTL C2 1000pF VINV 7 VINV=2.7V 1 GND 8 1 Pin INDEX RECOMMENDED PCB DESIGN (Top View) Parts ID VDD RF IN Ver.2004-10-04 L1, L3 TDK (MLK1005) L2, L4 MATUSHITA (ELJNK) C1, C2 MURATA (GRP15) C2 L3 L1 L2 VCTL Comment L4 C1 VINV RF OUT PCB (FR-4) : t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50) PCB SIZE=17.0mmX17.0mm - 13 - NJG1116BHB3 PACKAGE OUTLINE (USB8-B3) (TOP VIEW) (SIDE VIEW) 1pin INDEX 0.0380.01 0.140.05 0.80.05 0.75 1.50.05 0.50.1 0.50.1 0.30.05 8 4 0.20.1 7 6 5 0.20.05 TERMINAL TREAT PCB Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :4mg R0.075 3 0.20.1 2 0.30.1 1.50.05 1 0.20.05 0.40.1 (BOTTOM VIEW) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 14 - Ver.2004-10-04