Ver.2004-10-04
NJG1116BHB3
-1-
2.1GHz Band LNA GaAs MMIC
■
■■
■GENERAL DESCRIPTI ON ■
■■
■P A CKAGE OUTLINE
NJG11 16BHB3 is a LNA IC designed for 2.1GHz band
W-CDMA cellular phone .This IC has the function which
passes LNA, and high gain mode or low gain mode can
be chosen.
An ultra small and ultra thin package of USB8 is adopted.
■
■■
■FEATURES
●Low voltage operation +2.7V typ.
●Low current consumption 2.0mA typ. @V
CTL
=2.7V
2uA typ. @V
CTL
=0V
●High gain 14.4dB typ. @V
CTL
=2.7V , fRF =2140MHz
●Low noise figure 1.5dB typ. @V
CTL
=2.7V , fRF=2140MHz
●Pout at 1dB Gain Compression point -14.5dBm typ. @V
CTL
=2.7V , fRF=2140MHz
+11.0dBm typ. @V
CTL
=0V, fRF=2140MHz
●High input IP3 -3dBm typ. @V
CTL
=2.7V , fRF=2140MHz
+3dBm typ. @V
CTL
=0V, fRF=2140MHz
●Small package USB8-B3 (Package size: 1.5mmx1.5mmx0.75mm)
■
■■
■PIN CONFIG URATION
Note: S pecifications and description listed in this catalog are subject to change without prior notice.
NJG11 16BHB3
Pin Connection
1.V
INV
2.GND
3.RF OUT
4.GND
5.RF IN
6.GND
7. V
CTL
8. GND
(
To
p
View
)
5
6
7
2
3
8
1
4
1 Pin INDEX
Ver.2004-10-04
NJG1116BHB3
- 2 -
■
■■
■A BSOLUTE MAXIMUM RATINGS (T
a
=+25°C, Z
s
=Z
l
=50Ω)
PARAMETERS SYMBOL CONDITIONS RATINGS UNITS
Operating voltage V
DD
5.0 V
Inverter supply voltage V
INV
5.0 V
Control voltage V
CTL
5.0 V
Input power Pin V
DD
=2.7V +15 dBm
Power dissipation P
D
135 mW
Operating temperature T
opr
-40~+85 °C
S torage temperature T
stg
-55~+125 °C
■
■■
■ELECTRI CAL CHA RACTERISTI CS 1 (DC) (V
DD
=V
INV
=2.7V, T
a
=+25°C, Z
s
=Z
l
=50Ω)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating voltage V
DD
2.5 2.7 4.5 V
Inverter supply voltage V
INV
2.5 2.7 4.5 V
Control voltage (High) V
CTL(H)
2.0 2.7 V
INV+
0.3 V
Control voltage (Low) V
CTL(L)
0 0 0.8 V
Op eratin g curr ent1 I
DD1
RF OFF, V
CTL
=2.7V - 2.0 2.7 mA
Op eratin g curr ent2 I
DD2
RFOFF, V
CTL
=0V - 2 30 uA
Inverter curre nt1 I
INV1
RF OFF, V
CTL
=2.7V - 50 100 uA
Inverter curre nt2 I
INV2
RF OFF, V
CTL
=0V - 110 200 uA
Control current I
CTL
RF OFF, V
CTL
=2.7V - 20 50 uA
Ver.2004-10-04
NJG1116BHB3
-
3
-
■
■■
■ELECTRICAL CHARACTERISTICS 2 (LNA High Gain Mode)
(V
DD
=V
INV
=2.7V , V
CTL
=2.7V, freq=2140MHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequency freq 21 10 2140 2170 MHz
Small signal gain1 Gain1 13.2 14.4 15.7 dB
Noise figure1 NF1 - 1.5 1.9 dB
Pin at 1dB gain
compression point1 P
-1dB(IN)1
-16.5 -14.5 - dBm
Input 3rd order
intercept point IIP3_1 f1=fRF, f2=fRF+100kHz,
Pin=-36dBm -5.5 -3.0 - dBm
RF Input VS WR1 VS WR
I
1 - 1.7 2.3 -
RF Output VSWR1 VSWR
o
1 - 1.8 2.6 -
■
■■
■ELECTRICAL CHARACTERISTICS 2 (LNA Low Gain Mode)
(V
DD
=V
INV
=2.7V , V
CTL
=0V, freq=2140MHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequency freq 21 10 2140 2170 MHz
Small signal gain2 Gain2 -5.0 -4.0 -2.5 dB
Noise figure2 NF2 - 4.0 5.0 dB
Pin at 1dB gain
compression point2 P
-1dB(IN)2
+8.0 +11.0 - dBm
Input 3rd order
intercept point2 IIP3_2 F1=fRF, f2=fRF+100kHz,
Pin=-36dBm -1.0 +3.0 - dBm
RF Input VS WR2 VS WR
I
2 - 2.0 2.3 -
RF Output VSWR2 VSWR
o
2 - 1.5 2.0 -
Ver.2004-10-04
NJG1116BHB3
- 4 -
■TERMINAL INFOMA TIO N
CAUTION
1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as low
inductance as possible.
■
■■
■TRUTH TABLE
“H”=V
CTL
(H), “L”=V
CTL
(L)
V
CTL
Operating Current Bypass circuit LNA Mode
L OFF ON Low Gain Mode
H ON OFF High Gain Mode
No. SYMBOL DESCRIPTION
1 VINV Inverter voltage supplies terminal.
2 GND Ground terminal. (0V)
3 RFOUT
RF output terminal. The RF signal is output through external matching circuit connected
to this terminal. Please connected inductance L3 and power supply as shown in test
circuit, since this terminal is also the terminal of LNA power supply .
4 GND Ground terminal. (0V)
5 RFIN
RF input terminal. The RF signal is input through external matching circuit connected to
this terminal. A DC blocking capacitor is not required.
6 GND Ground terminal. (0V)
7 VCTL
Control voltage supply terminal. The High level voltage of this terminal controls LNA High
Gain Mode. The Low level voltage of this terminal controls LNA Low Gain Mode.
8 GND Ground terminal. (0V)
Ver.2004-10-04
NJG1116BHB3
-
5
-
■
■■
■ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout vs. P in
Pout(dBm)
Pin(dBm)
( freq=2.14GHz, V
DD
=V
INV
=V
CTL
=2.7V, Ta=25
o
C )
P-1dB(IN)=-13.3dBm
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2 2.05 2.1 2.15 2.2 2.25 2.3
NF vs. frequency
NF(dB)
frequency(GHz)
( V
DD
=V
INV
=V
CTL
=2.7V, Ta=25
o
C )
NF
-100
-80
-60
-40
-20
0
20
-40-35-30-25-20-15-10 -5 0
Pout, IM3 vs. Pin
P o u t,IM 3 (d B m)
Pin (dBm )
IM3
Pout
( freq=2.14GHz, V
DD
=V
INV
=V
CTL
=2 .7 V , T a = 2 5
o
C )
6
7
8
9
10
11
12
13
14
-6
-5
-4
-3
-2
-1
0
1
2
2.1 2.12 2.14 2.16 2.18 2.2
OIP 3 , IIP 3 vs . fre q u e n cy
IIP 3 (d B m)
OIP3 (dBm)
frequency(GHz)
IIP3
OIP3
( df=100kHz, P in=-36dBm, V
DD
=V
INV
=V
CTL
=2.7V, Ta=25
o
C )
-22.0
-20.0
-18.0
-16.0
-14.0
-12.0
-10.0
-8.0
2.1 2.12 2.14 2.16 2.18 2.2
P-1dB(IN) vs. frequency
P-1dB(IN)
frequency(GHz)
( V
DD
=V
INV
=V
CTL
=2.7 V , Ta= 2 5
o
C )
P-1dB(IN)
2
4
6
8
10
12
14
16
18
-40 -35 -30 -25 -20 -15 -10 -5 0
G a in v s. P in
Gain(dB)
Pin(dBm)
( freq =2.14GHz, V
DD
=V
INV
=V
CTL
=2.7V, Ta=25
o
C )
P-1dB(IN)=-13.3dBm
Ver.2004-10-04
NJG1116BHB3
-
6
-
■
■■
■ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
22.533.544.55
O IP3, IIP3 vs. VDD
OIP3(dBm)
IIP3(dBm)
VDD(V)
( freq=2.14+2.1401GHz, Pin=-36dBm, V
INV
=V
CTL
=2.7V )
OIP3
IIP3
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
IDD vs. V DD
VDD (V)
IDD (m A)
( V
INV
=V
CTL
=2 .7V, PRF = OFF )
I
DD
9
10
11
12
13
14
15
16
17
0.5
1
1.5
2
2.5
3
3.5
4
4.5
22.533.544.55
Ga i n, N F v s . V DD
NF (dB)
Gain (dB)
VDD (V)
NF
Gain
( freq=2.14GHz, V
INV
=V
CTL
=2.7V )
-22
-20
-18
-16
-14
-12
-10
-8
-6
22.533.544.55
P-1dB(IN ) vs. VDD
P-1dB(IN)(dBm)
VDD(V)
P-1dB(IN)
( fre q =2 .1 4 GHz, V
INV
=V
CTL
=2.7V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
VSWR vs. V DD
VSWRi
VSWRo
VSWRi, VSWRo
VDD (V)
( freq=2.14GHz, V
INV
=V
CTL
=2.7V )
Ver.2004-10-04
NJG1116BHB3
-7-
■
■■
■ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
-50 -25 0 25 50 75 100
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
O IP 3, IIP 3 vs . Te m p er atu re
( freq=2.14+2.1401GHz, Pin=-36dBm, V
DD
=V
INV
=V
CTL
=2.7V )
IIP3 ( dBm)
OIP3 (dBm )
Am bient T em peratur e (oC)
OIP3
IIP3
-22
-20
-18
-16
-14
-12
-10
-8
-6
-50 -25 0 25 50 75 100
P-1dB(IN) vs. Tem perature
P -1d B(IN) (d B m)
Amb ient T em peratu re (
o
C)
P-1dB(IN)
( freq=2.14GHz, V
DD
=V
INV
=V
CTL
=2.7V )
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100
I
DD
vs. Tem perature
I
DD
(m A)
Am b ient Tempe rature (
o
C)
( V
DD
=V
INV
=V
CTL
=2.7V, PRF=OFF)
I
DD
9
10
11
12
13
14
15
16
17
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50 -25 0 25 50 75 100
Ga in, N F v s. T e mp e r atu r e
( freq=2.14GHz, V
DD
=V
INV
=V
CTL
=2.7V )
NF (dB)
Gain ( d B)
Am b ient Te m pe rature (
o
C)
Gain
NF
0
0.5
1
1.5
2
2.5
3
3.5
4
-50-250 255075100
VSW R vs. Temperature
VSWRi
VSWRo
VSWRi, VSWRo
Am b ien t Tem p er ature (
o
C)
( freq=2.14G Hz , V
DD
=V
INV
=V
CTL
=2.7V )
Ver.2004-10-04
NJG1116BHB3
-
8
-
■
■■
■ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
S11, S22 S21, S12
VSW
R
Zin, Zout
S11, S22 (100MHz
~
20GHz) S21, S12 (100MHz
~
20GHz)
Ver.2004-10-04
NJG1116BHB3
-
9
-
■
■■
■ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
-50
-40
-30
-20
-10
0
10
-40 -30 -20 -10 0 10 20
Pout vs. Pin
Pout(dBm)
Pin(dBm)
( freq=2.14GHz, V
DD
=V
INV
=2.7V, V
CTL
=0V, Ta=25
o
C )
P-1dB(IN)=+10.5dBm
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
2 2.05 2.1 2.15 2.2 2.25 2.3
NF vs. frequency
NF(dB)
frequency(GHz)
( V
DD
=V
INV
=2 .7 V , V
CTL
=0V, Ta=25
o
C )
NF
-100
-80
-60
-40
-20
0
20
-40-30-20-10 0 10
Pou t, IM3 vs. Pin
P ou t,IM 3 (d Bm)
Pin (dBm)
IM3
Pout
( freq=2.14GHz , V
DD
=V
INV
= 2.7 V , V
CTL
=0V, Ta=25
o
C )
-10
-8
-6
-4
-2
0
2
4
-2
0
2
4
6
8
10
12
2.1 2.12 2.14 2.16 2.18 2.2
OIP 3 , IIP 3 v s . fre q u e n cy
IIP 3 (d Bm)
OIP3 (dBm)
frequency(GHz)
IIP3
OIP3
( df=100kHz, Pin=-36dBm, V
DD
=V
INV
=2.7V, V
CTL
=0V, Ta=25
o
C )
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
2.1 2.12 2.14 2.16 2.18 2.2
P-1dB(IN) vs. frequency
P-1dB(IN)
frequency(GHz)
( V
DD
=V
INV
=2 .7 V , V
CTL
=0V, Ta=25
o
C )
P-1dB(IN)
-10
-8
-6
-4
-2
0
-40 -30 -20 -10 0 10 20
G a in v s . Pin
Gain(dB)
Pin(dBm)
( freq=2.14GHz , V
DD
=V
INV
=2.7V, V
CTL
=0V, Ta=25
o
C )
P-1dB(IN)=+10.5dBm
Ver.2004-10-04
NJG1116BHB3
- 1
0
-
■
■■
■
ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
22.533.544.55
O I P3 , IIP 3 v s . VDD
OIP3(dBm)
IIP3(dBm)
V
DD
(V)
( freq=2.14 +2.1401GHz, Pin=-20dBm , V
INV
=2.7V, V
CTL
=0V )
OIP3
IIP3
-10
-9
-8
-7
-6
-5
-4
-3
-2
2
3
4
5
6
7
8
9
10
22.533.544.55
G ain, NF vs. V DD
NF (dB)
Gain (dB)
V
DD
(V )
NF
Gain
( freq=2.14GH z , V
INV
=2.7V , V
CTL
=0V )
4
6
8
10
12
14
16
18
22.533.544.55
P-1dB (IN ) vs. V
DD
P-1dB(IN)(dBm)
V
DD
(V)
P-1dB(IN)
( freq=2.14G Hz, V
INV
=2.7V, V
CTL
=0V )
-52
-50
-48
-46
-44
-42
-40
-38
22.533.544.55
IMD3 v s. V
DD
IMD3(dBc)
V
DD
(V)
IMD3
( freq =2.1 4 + 2.1 401 GH z , P in = -2 0d B m, V
INV
= 2 .7V , V
CTL
=0V )
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
VSWR vs . V
DD
VSWRi
VSWRo
VS WR i, VS WR o
V
DD
(V)
( freq=2.14G Hz, V
INV
=2.7V, V
CTL
=0V )
0
2
4
6
8
10
22.533.544.55
I
DD
vs. V
DD
V
DD
(V)
I
DD
(u A)
( V
INV
=2.7V , V
CTL
=0V , PRF=O FF)
I
DD
Ver.2004-10-04
NJG1116BHB3
-11-
■
■■
■ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-50-250 255075100
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
O IP3 , IIP3 v s . T e mpe r at u re
( freq=2.14 +2.1401 GH z , Pin=-20dB m, V
DD
=V
INV
=2.7V, V
CTL
=0V)
IIP 3 ( d B m)
OIP3 (dBm)
Am bient T emp eratur e (
o
C)
OIP3
IIP3
4
6
8
10
12
14
16
18
-50-250 255075100
P -1dB(IN ) vs. Te m p erature
P -1 d B(IN ) (d B m)
Am bient T emp erature (
o
C)
P-1dB(IN)
( freq=2 .14G H z, V
DD
=V
INV
= 2.7 V, V
CTL
=0V)
0
5
10
15
20
25
30
-50-250 255075100
I
DD
(u A)
Am bient T emp erature (
o
C)
IDD vs. Tem p erature
( V
DD
=V
INV
=2.7V, V
CTL
=0V, PRF=OFF)
I
DD
-10
-9
-8
-7
-6
-5
-4
-3
-2
2
3
4
5
6
7
8
9
10
-50-250 255075100
NF (dB)
Gain (dB)
Am bient T emp eratur e (
o
C)
Gain
NF
Gain , N F v s. T e mp er a tu r e
( freq= 2.14G Hz, V
DD
=V
INV
=2.7V, V
CTL
=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50-250 255075100
VSW R vs. Tem perature
VSWRi
VSWRo
V SW Ri, V SWRo
Am b ien t Tem p er ature (oC)
( freq=2.14GHz, V
DD
=V
INV
=2.7V, V
CTL
=0V)
Ver.2004-10-04
NJG1116BHB3
- 12 -
■
■■
■ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
S11, S22 S21, S12
VSW
R
Zin, Zout
S11, S22 (100MHz
~
20GHz) S21, S12 (100MHz
~
20GHz)
Ver.2004-10-04
NJG1116BHB3
-1
3
-
■
■■
■TEST CIRCUI T
■
■■
■RECO MMENDED PCB DESIG N
Parts ID
Comment
L1, L3 TDK (MLK 1005)
L2, L4
MA TUSHIT A
(ELJ NK)
C1, C2
MURAT A (GRP15)
PCB (FR-4) :
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z
0
=50Ω)
PCB SIZE=17. 0mmX17.0mm
VCTL
GND
RFIN
VINV
GND
RFOUT
5
6
7
2
3
8
1
4
GND
GND
L1
3.9nH
L2
5.1nH
L3
1.8nH
L4
6.8nH C1
1.5pF
C2
1000pF
V
CTL
=0V or 2.7V V
INV
=2.7V
V
DD
=2.7V
RF IN RF OU T
1 Pin INDEX
(Top View)
V
INV
L
4
RF IN
RF OUT
V
DD
V
CTL
L1
L2
L3
C1
C2
(Top View)
Ver.2004-10-04
NJG1116BHB3
- 14 -
■
■■
■PA CKAGE OUTLINE (USB8-B3)
TERMINAL TREA T :Au
PCB :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :4mg
Caution
s
on using thi
s
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NO T eat or put in to mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
•
T
was
t
e
this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This p roduc t m ay be dam age d wi th elec t ric st atic dis ch ar ge (E SD ) o r sp ik e vol t age. Pl eas e h an dle wit h c are t
o
avoid these dama
g
es.
[CAU TION ]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
0.038±0.01
1pin INDEX
0.4±0.1
(TOP VIEW) (SIDE VIEW)
1.5±0.05
0.2±0.050.2±0.05
0.3±0.1
0.2±0.1
0.2±0.1
0.5±0.1 0.5±0.1
1.5±0.05
R0.075
765
123
84
0.14±0.05
0.8±0.05
(BOTTOM VIEW)
0.3±0.05
0.7
5