DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits * * * * * * * * ID RDS(on) max TA = 25C 18m @ VGS = 4.5V 5.2A 30m @ VGS = 1.8V 4.0A 20V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * Power management functions * Battery Pack * Load Switch * * * * * Case: U-DFN3030-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.0172 grams (approximate) 5 6 7 8 8 7 6 5 2 3 4 U-DFN3030-8 D1/D2 ESD PROTECTED TO 2kV Top View G2 S2 G1 S1 4 3 2 1 Bottom View 1 Bottom View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 6) Part Number DMN2016LFG-7 Notes: Case U-DFN3030-8 Packaging 3000 / Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com Marking Information YYWW ADVANCE INFORMATION Product Summary N20 DMN2016LFG Document number: DS32053 Rev. 3 - 2 N20 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 09 for 2009) WW = Week code (01 to 53) 1 of 6 www.diodes.com January 2012 (c) Diodes Incorporated DMN2016LFG ADVANCE INFORMATION Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Unit V V IDM Value 20 8 5.2 4.1 30 Symbol PD RJA RJC TJ, TSTG Value 0.77 169 15.8 -55 to +150 Unit W C/W C/W C TA = 25C TA = 70C Steady State ID Pulsed Drain Current (10s pulse, duty cycle = 1% ) A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C (Note 4) Thermal Resistance, Junction to Case @TA = 25C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS BVGSO IDSS IGSS 20 8 - - 1.0 10 V V A A VGS = 0V, ID = 250A VDS = 0V, IG = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) 0.4 RDS (ON) - |Yfs| VSD - 1.1 18 19 20.5 22 30 1.0 V Static Drain-Source On-Resistance 0.71 13 13.5 14 15 21 25 0.75 VDS = VGS, ID = 250A VGS = 4.5V, ID = 6A VGS = 4.0V, ID = 6A VGS = 3.1V, ID = 6A VGS = 2.5V, ID = 6A VGS = 1.8V, ID = 6A VDS = 5V, ID = 6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 1472 311 141 1.46 16.0 36.6 2.1 2.6 13.2 84.5 46.8 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: m S V pF pF pF nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6A VDD = 10V, VGS = 5V, RGEN = 3, RL = 1.7 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature 6. Guaranteed by design. Not subject to product testing DMN2016LFG Document number: DS32053 Rev. 3 - 2 2 of 6 www.diodes.com January 2012 (c) Diodes Incorporated DMN2016LFG 50 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 35 30 25 20 15 TA = 150C TA = 125C T A = 85C 10 TA = 25C 5 TA = -55C 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 2.0 VGS = 1.8V VGS = 2.5V VGS = 4.5V 0 10 20 30 40 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 VGS = 4.5 V ID = 5A 1.2 VGS = 8V ID = 10A 1.0 0.8 0.6 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN2016LFG Document number: DS32053 Rev. 3 - 2 3 of 6 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics 3 0.04 VGS= 4.5V 0.03 T A = 150C TA = 125C 0.02 TA = 85C TA = 25C TA = -55C 0.01 0 50 1.8 1.4 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 45 0 5 10 15 20 25 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.03 VGS = 4.5V ID = 5A 0.02 VGS = 8V ID = 10A 0.01 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature January 2012 (c) Diodes Incorporated DMN2016LFG 1.2 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 0.9 ID = 1mA 0.6 ID = 250A 15 TA = 25C 10 5 0.3 0 -50 0 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 VGS GATE THRESHOLD VOLTAGE (V) 10,000 CT, JUNCTION CAPACITANCE (pF) Ciss 1,000 Coss 100 10 Crss VDS = 10V ID = 6A f = 1MHz 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1.5 20 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 40 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 160C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMN2016LFG Document number: DS32053 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 January 2012 (c) Diodes Incorporated DMN2016LFG ADVANCE INFORMATION Package Outline Dimensions A U-DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm A3 SEATING PLANE A1 e b .2 R0 E 00 E2 L D2 D Suggested Pad Layout Z X1 X2 G Y DMN2016LFG Document number: DS32053 Rev. 3 - 2 Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 C 5 of 6 www.diodes.com January 2012 (c) Diodes Incorporated DMN2016LFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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