DMN2016LFG
Document number: DS32053 Rev. 3 - 2 1 of 6
www.diodes.com January 2012
© Diodes Incorporated
DMN2016LFG
ADVANCE INFORMATION
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(on) max ID
TA = 25°C
20V 18mΩ @ VGS = 4.5V 5.2A
30mΩ @ VGS = 1.8V 4.0A
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Power management functions
• Battery Pack
• Load Switch
Mechanical Data
• Case: U-DFN3030-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.0172 grams (approximate)
Ordering Information (Note 6)
Part Number Case Packaging
DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Bottom View Bottom View
Pin Configuration
ESD PROTECTED T O 2kV
Top View
Equivalent Circuit
To
p
View
S1G1S2G2
D1/D2
5678
4321
5678
4321
N20 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)
YYWW
N20
U-DFN3030-8
DMN2016LFG
Document number: DS32053 Rev. 3 - 2 2 of 6
www.diodes.com January 2012
© Diodes Incorporated
DMN2016LFG
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 4) Steady
State TA = 25°C
TA = 70°C ID 5.2
4.1 A
Pulsed Drain Current (10μs pulse, duty cycle = 1% ) IDM 30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 0.77 W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RθJA 169 °C/W
Thermal Resistance, Junction to Case @TA = 25°C (Note 4) RθJC 15.8 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 20 - - V
VGS = 0V, ID = 250μA
Gate-Source Breakdown Voltage BVGSO ±8 - - V
VDS = 0V, IG = ±250μA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0
μA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS - - ±10
μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.4 0.71 1.1 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) -
13 18
mΩ
VGS = 4.5V, ID = 6A
13.5 19 VGS = 4.0V, ID = 6A
14 20.5 VGS = 3.1V, ID = 6A
15 22 VGS = 2.5V, ID = 6A
21 30 VGS = 1.8V, ID = 6A
Forward Transfer Admittance |Yfs| - 25 - S
VDS = 5V, ID = 6A
Diode Forward Voltage VSD - 0.75 1.0 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - 1472 - pF VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 311 - pF
Reverse Transfer Capacitance Crss - 141 - pF
Gate Resistance R
g
- 1.46 - Ω VDS =0V, VGS = 0V, f = 1MHz
Total Gate Charge Q
g
- 16.0 - nC VGS = 4.5V, VDS = 10V,
ID = 6A
Gate-Source Charge Q
g
s - 36.6 - nC
Gate-Drain Charge Q
g
d - 2.1 - nC
Turn-On Delay Time tD
(
on
)
- 2.6 - ns VDD = 10V, VGS = 5V,
RGEN = 3Ω, RL = 1.7Ω
Turn-On Rise Time t
r
- 13.2 - ns
Turn-Off Delay Time tD
(
off
)
- 84.5 - ns
Turn-Off Fall Time tf - 46.8 - ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature
6. Guaranteed by design. Not subje c t to produ ct testing
DMN2016LFG
Document number: DS32053 Rev. 3 - 2 3 of 6
www.diodes.com January 2012
© Diodes Incorporated
DMN2016LFG
ADVANCE INFORMATION
0
5
10
15
20
25
30
35
40
45
50
0 0.5 1.0 1.5 2.0
V , DRAIN-SOURCE VOL TAGE (V)
Fig.1 T ypical Output Characteristic
DS
I, D
AIN
EN
(A)
D
0 0.5 1 1.5 2 2.5 3
V , GA TE -SOURCE VOLTAGE
GS
Fig.2 Typical Transfer Characteristics
I, D
AIN
EN
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
01020304050
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
I , DRAIN-SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain C urre nt an d Gate Voltage
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
I , DRAIN CURRENT
D
Fig. 4 Typical On-Resistance vs.
Drain C urre nt and Tem per at ur e
, D
AIN-S
U
CE
N-
ESI STANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.8
, D
AIN-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
1.6
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resistance Variation with Temperature
J
°
V=V
I= 10A
GS
D
8
V=V
I= 5A
GS
D
4.5
0
0.01
0.02
0.03
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
8
DMN2016LFG
Document number: DS32053 Rev. 3 - 2 4 of 6
www.diodes.com January 2012
© Diodes Incorporated
DMN2016LFG
ADVANCE INFORMATION
0
0.3
0.6
0.9
1.2
1.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig . 7 Ga t e Threshol d Variation vs. Am bi ent Tempe r at ur e
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0
5
10
15
20
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
S
T= 25°C
A
10
100
10,000
, J
I
A
A
I
A
E (pF)
T
1,000
0 5 10 15 20
V , DRAIN-SOURCE VOLT AGE (V)
DS
Fig . 9 Typi cal Ju nct ion Cap acitance
C
iss
f = 1MHz
C
oss
C
rss
0 5 10 15 20 25 30 35 40
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
V = 10V
I=A
DS
D
6
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig . 11 Tr ansie nt T herm al R esi stance
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
R = r * R
θ
JA(t) (t)
θ
θ
JA
JA
R = 160 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
DMN2016LFG
Document number: DS32053 Rev. 3 - 2 5 of 6
www.diodes.com January 2012
© Diodes Incorporated
DMN2016LFG
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
U-DFN3030-8
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.02
A3 ⎯ ⎯ 0.15
b 0.29 0.39 0.34
D 2.90 3.10 3.00
D2 2.19 2.39 2.29
e ⎯ ⎯ 0.65
E 2.90 3.10 3.00
E2 1.64 1.84 1.74
L 0.30 0.60 0.45
All Dimensions in mm
Dimensions Value (in mm)
Z 2.59
G 0.11
X1 2.49
X2 0.65
Y 0.39
C 0.65
D
A1
AA3
E2
D2
L
E
SEATING PLANE
eb
R0.200
Z
G
X1
X2
YC
DMN2016LFG
Document number: DS32053 Rev. 3 - 2 6 of 6
www.diodes.com January 2012
© Diodes Incorporated
DMN2016LFG
ADVANCE INFORMATION
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failure of the life support device or to affect its safety or effectiveness.
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