INTERNATIONAL RECTIFIER Data Sheet No. PD-9.486C IgaR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM140 2N7218 JANTX2N7218 JANTXVEN7218 (REF: MIL-S-19500/596) 100 Volt, 0.077 Ohm HEXFET The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies and virtually any application where military and/or high reliability is required. CASE STYLE AND DIMENSIONS 13.84 (0.545) 13.59 (0.535) 6.60 (0.260) 6.32 (0.249) 20.32 (0.800) 20.07 (0.790) BERYLLIA WARNING PER MIL-S-19500 SEE PAGE 1-300 Product Summary Part Number | BVpss Ros(on) Ip IRFM140 100V 0.0772 28A FEATURES: @ Repetitive Avalanche Rating @ Isolated and Hermetically Sealed @ Alternative to TO-3 Package @ Simple Drive Requirements @ Ease of Paralleling @ Ceramic Eyelets 7 [0.12 (0,005) -B 1. me. 545) eae -_ (0. a aa [1-27 (0,050) el Vee. 17.40 (0,685) As14 (0.045) cpm ih a at rae Baer OTC Tago] 8] [e0.25 (0.010) G01] 1 DRAIN 2 SOURCE 4 (GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI 14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and (Inches) For jeadtorm configurations see page |-300, fig. 15 1-293IRFM140, JANTXV, JANTX-, 2N7218 Devices Absolute Maximum Ratings IaR Parameter IRFM140, JANTXV, JANTX., 2N7218 Units Ip @ Vag = 10V, Tc = 25C Continuous Drain Current 28 Ip @ Vag = 10V, Tc = 100C Continuous Drain Current 20 A lpm Puised Drain Current 112 Pp @ Te = 26C Max. Power Dissipation 125 Ww Linear Oerating Factor 10 wik Ves Gate-to-Source Voltage* +20 v Eas Single Pulse Avalanche Energy @) 250 mJ (See Fig. 12) lar Avalanche Current 28 A (See Ear) Ear Repetitive Avalanche Energy 125 mJ (See Fig. 13) dvidt Peak Diode Recovery dvidt @ 55 Vina (See Fig. 13) Ty Operating Junction -55 to 150 Tsta Storage Temperature Range C Lead Temperature 300 (0.063 in. (1.6 mm) from case for 10s) Weight 9.3 (typical) 9g Electrical Characteristics @ 1, = 25C (Untess Otherwise Specified) Parameter Min. Te. Max. Units Test Conditions BVpss Drain-to-Source Breakdown Voltage 100 - - v Ves = OV, Ip = 10mA ABVpgs/A4Ty Temperature Coefficient of - 0.13 _ viet Reference to 25C, Ip = 1.0 mA Breakdown Voltage R Static Drain-to-Source _ - 0.077 Vv = 10V, Ip = 20A Sion) On-State Resistance 2 Gs 5 - _- 0.125 Veg = 10V, Ip = 28A Ve@sith) Gate Threshold Voltage 20 _ 40 v Vos = Vos: Ip = 250 pA Os Forward Transconductance 9.1 - ~ S$ (8) | Vos = 15V, Ipg = 20A @ Ipss Zero Gate Voltage Drain Current - - 25 Vps = 08 x Max. Rating, Vag = OV A = = 250 X Vps = 08 x Max. Rating Vas = OV, Ty = 125C less Gate-to-Source Leakage Forward _ _ 100 nA Vas = 20V less Gate-to-Source Leakage Reverse _ - -100 Ves = -20V Qg Total Gate Charge 30 - 59 Vas = 10V, Ip = 28A Qgs Gate-to-Source Charge 24 _ 12 nc Vps * 0.5 x Max. Rating Qga Gate-to-Drain (Miller) Charge 12 - 30.7 See Fig. 6 and 14 tajon) Turn-On Delay Time _ - 21 Yop = 50V, Ip = 20A, Re = 9.12 ty Rise Time _ 145 ns tavofh Turn-Off Delay Time - ~ 64 See Fig. 11 tf Fall Time - _ 105 Lp Internal Drain Inductance _ a7 - Measured from the drain Modified MOSFET symbol lead, 6 mm (0.25 in) from | showing the internal nH package to center of die. inductances. lg Internal Source Inductance - 87 - Measured from the source lead, 6 mm (0.25 $ in.) from package to source bonding pad. s Cigs Input Capacitance _ 1660 - Vas = OV, Vps = 25V Coss Output Capacitance _ 550 - oF f = 1.0 MHz Crss Reverse Transfer Capacitance - 120 - See Fig. 5 Coc Orain-to-Case Capacitance _ 12 - 1-294IgaR Source-Drain Diode Ratings and Characteristics IRFM140, JANTXV, JANTX-, 2N7218 Devices Parameter Min. Typ. Max. Units Test Conditions Ig enn see Current - -~ 28 Modified oe elon rocmicn 9 the integral p a Iso (gosy easy - - 112 f Vsp Diode Forward Voltage - ~ 18 Vv Ty = 25C, Ig = 284, Vag = OV @ tre Reverse Recovery Time - _~ 400 ns Ty = 25C, Ip = 28A, di/dt = 100Ayus @ QrR Aeverse Recovery Charge _ 29 ue Vop = 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. Thermal Resistance Parameter Min. Te. Max. Units Test Conditions Rihuc _ Junction-to-Case - ~ 1.0 Rihus Case-to-Sink - 0.21 |KW Mounting surface flat, smooth, and greased RihuA Junction-to-Ambient - _ 48 Typical socket mount Repetitive Rating; Pulse width limited by Igp s 28A, difdt < 170 Alps, KW = Ciw maximum junction temperature (see figure 9) Vop < BYpss: Ty = 150C WIK = WIC Refer to current HEXFET reliability report @ Vpp = 25V, Starting Ty = 25C, L = 470 uH, Rq = 250, Peak || = 28A Suggested Re = 9.12 @ Pulse width < 300 us; Duty Cycle < 2% 1-295IRFM140, JANTXV, JANTX-, 2N7218 Devices IaR 4.5V Ip, DRAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 20us PULSE WIDTH 20us PULSE WIDTH Tce = 25C Tc = 150C 10 tot 10 to! Vos, DRAIN-TO-SQURCE VOLTAGE (VOLTS) Vos: DRAIN-TO-SGURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics, Tc = 25C Fig. 2 Typical Output Characteristics, Tc = 150C DRAIN CURRENT (AMPERES) (NORMAL IZED} * Vos = 50V 20us PULSE WIDTH Ras (on) DRAIN-TO SOURCE ON RESISTANCE Ves = 10V 0.0 4 -60 -40 -20 0 20 40 60 860 100 120 140 160 5 6 7 B 3 10 Vg, GATE-TO-SOURCE VOLTAGE (VOLTS) Ty VUNCTION TEMPERATURE ( C ) Fig. 3 Typicat Transfer Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature 1-296.IeaR IRFM140, JANTXV, JANTX-, 2N7218 Devices 3000 C, CAPACITANCE (pf) wo Be a 2400 S w oO << 5 4800 : Wd oO a = ao 4200 n o Ee Ww ha << 600 a ~ Cogs 0 0 SEE FIGURE 14 404 20 40 60 0 Vyg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nc) Fig. 5 Typical Capacitance Vs. Drain-to-Source Fig. 6 Typical Gate Charge Vs. Gate-to-Source Voltage Voltage 109 OPERATION IN THIS AREA LIMITED 5 BY Fps (ON) 102 tot 40 Ip. ORAIN CURRENT (AMPERES) T Ty=150C SINGLE 409 Top, REVERSE ORAIN CURRENT (AMPERES) Vgg = OV 0.4 5 . 10 4.20 a4 46 o42 8 g 2 8 ag @ 5 4ge@e 5 402 Veo. SQURCE-TO-DRAIN VOLTAGE (VOLTS) Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage Fig. 8 Maximum Safe Operating Area 1-297IRFM140, JANTXV, JANTX-, 2N7218 Devices 10 I6aR e 2 4 Nn Ww w z a a. a Ww x 20.1 + = Pom | WwW x r SINGLE PULSE trl | (THERMAL RESPONSE) NOTES 4. DUTY FACTOR, D=t1/t2 2. PEAK Ty=Ppm x Zthjc + Te 10 105 10-4 4073 10? 0.1 4 40 t4, RECTANGULAR PULSE DURATION (SECONDS) Fig. 9 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Rp Vos WN D.U.T yk T. Yop Pulse Width <1ps Duty Factor <0.1% Tp. ORAIN CURRENT (AMPERES) 0 25 50 75 Tc. CASE TEMPERATURE ( C) 100 425 150 Fig. 10 Maximum Drain Current Vs. Case Temperature 1-298 1H Fig. 11a Switching Time Test Circuit ws | 90% [ | | | | | 10% | | | I ves NE taon) ty taro ty Fig. 11b Switching Time WaveformsIaR IRFM140, JANTXV, JANTX-, 2N7218 Devices Vary tp to obtain required peak I, D.U.T. PEAK I, = 28A L Vop = 25V = Vpp 0.200 0.150 Fig. 12a Unclamped Inductive Test Circuit 0.400 f) 0.050 Eas, SINGLE PULSE ENERGY (J) 9.0005 100 150 STARTING Ty, JUNCTION TEMPERATURE (C) Fig. 12 Maximum Avalanche Energy Vs. Starting Fig. 12b Unclamped inductive Waveforms Junction Temperature @ Driver Gate Drive p= Ww D.U.T, <+ Circuit Layout Considerations PW Feriod Period +\ + Low Stray Inductance 7 @) @ = *Ground Plane Vee = 10V" + Low Leakage Inductance Ss Current Transformer LS L} d) | _- @ D.U.T. Igp Waveform Reverse ; - +4 Recovery| | Body Diode Forward Current Current / | ign AA, @ D.U.T. Vos Waveform Diode Aosovory dvidt N\ +; Yoo & | dv/dt controlled by Re -Apolied i - * Driver same type as D.U.T. + Re aeper Body Diode Forward Di * Isp controlled by Duty Factor D Vop i daetor Current onward Drop * D.U.T. - Device Under Test am nt Ie Ripple < 5% , Iso Vas = 5V for Logic Level Devices Fig. 13 Peak Diode Recovery dv/dt Test Circuit 1-299IRFM140, JANTXV, JANTX-, 2N7218 Devices Current Regulator [ Same Type | | as DUT LH | | 4) hove J | | aur | oT a 7 Vos 10V s a D.U.T. T- Ft Oc Qc Vas et Vg amal [L pon Charge Ic Ip Fig. 14a Basic Gate Charge Waveform Current Sampling Resistors Fig. 14b Gate Charge Test Circuit 13.84 (0.545) 13.59 (0.535) 3.78 (0.149) 3.59 (0.159) N 1.14 (0.045) 0.89 (0.035) | | 3x 4 noe Ee 2X lots acoso 0.25 (0.010) OIC LEGEND (0.010) @O{C} 1 DRAIN 2 SQURCE 3 GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANS! Y14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 3 LEADFORM IS AVAILABLE IN EITHER ORIENTATION: (3.7) EXAMPLE: IRFM140D (3.2) EXAMPLE: IRFM140U 6.60 (0.260) 632 (0.249) | + _ 17.40 (0.685) 20.32 (0.800 j 1.52 (0.060) R 16-89 0-68) | yea | 207 (0-790) 13.84 (0.545) MIN. 21.98 (0.865) v 13.59 (0.500) 30.95 (0.825) 12 3 yy Ga | 0.50 (0.020) @[C AG] B | [0.12 (0.005) 27 (0.050) 02 (0.040) te L 4.01 (0.158) } 83 (0. 190) 3.61 (0. 142) 81 4 3.81 (0. 150) Fig. 15 Optional Leadforms for Outline TO-254 BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or berytilum dust. Furthermore, beryllium oxide packages shail not be placed in acids that containing beryillum. 1-300 will produce fumes