SiS322DNT
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S17-1448-Rev. B, 18-Sep-17 1Document Number: 63569
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N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Thin 0.75 mm height
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switch mode power supplies
• Personal computers and servers
• Telecom bricks
•VRM’s and POL
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8S is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 °C/W
f. Based on TC = 25 °C
PRODUCT SUMMARY
VDS (V) 30
RDS(on) max. () at VGS = 10 V 0.0075
RDS(on) max. () at VGS = 4.5 V 0.0120
Qg typ. (nC) 6.9
ID (A) 38.3 f
Configuration Single
PowerPAK® 1212-8S
Top View
1
3.3 mm
3.3 mm
1
3.3
mm
3.3
mm
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8S
Lead (Pb)-free and halogen-free SiS322DNT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 30 V
Gate-source voltage VGS +20, -16
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
38.3
A
TC = 70 °C 30.6
TA = 25 °C 15.3 a, b
TA = 70 °C 12.1 a, b
Pulsed drain current (t = 300 μs) IDM 70
Continuous source-drain diode current TC = 25 °C IS
18
TA = 25 °C 2.9 a, b
Single pulse avalanche current L = 0.1 mH IAS 10
Single pulse avalanche energy EAS 5mJ
Maximum power dissipation
TC = 25 °C
PD
19.8
W
TC = 70 °C 12.7
TA = 25 °C 3.2 a, b
TA = 70 °C 3 a, b
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) c, d 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient a, e t 10 s RthJA 31 39 °C/W
Maximum junction-to-case (drain) Steady state RthJC 56.3
SiS322DNT
www.vishay.com Vishay Siliconix
S17-1448-Rev. B, 18-Sep-17 2Document Number: 63569
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 30 - - V
VDS temperature coefficient VDS/TJID = 250 μA - 18.5 - mV/°C
VGS(th) temperature coefficient VGS(th)/TJ--5.2-
Gate-source threshold voltage VGS(th) VDS = VGS , ID = 250 μA 1.2 - 2.4 V
Gate-source leakage IGSS VDS = 0 V, VGS = +20 V, -16 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 30 V, VGS = 0 V - - 1 μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10
On-state drain current aID(on) V
DS 5 V, VGS = 10 V 30 - - A
Drain-source on-state resistance aRDS(on)
VGS = 10 V, ID = 10 A - 0.0060 0.0075
VGS = 4.5 V, ID = 8 A - 0.0096 0.0120
Forward transconductance agfs VDS = 15 V, ID = 10 A - 54 - S
Dynamic b
Input capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
- 1000 -
pFOutput capacitance Coss - 287 -
Reverse transfer capacitance Crss -34-
Crss/Ciss ratio - 0.034 0.068
Total gate charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A - 14.3 21.5
nCVDS = 15 V, VGS = 4.5 V, ID = 10 A
- 6.9 10.5
Gate-source charge Qgs -2.8-
Gate-drain charge Qgd -1.6-
Output charge Qoss VDS = 15 V, VGS = 0 V - 7.8 -
Gate resistance Rgf = 1 MHz 0.4 1.6 3.2
Turn-on delay time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
-1530
ns
Rise time tr -1020
Turn-off delay time td(off) -1530
Fall time tf-714
Turn-on delay time td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
-1122
Rise time tr -918
Turn-off delay time td(off) -1530
Fall time tf-510
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - 18 A
Pulse diode forward current ISM --70
Body diode voltage VSD IS = 5 A, VGS = 0 V - 0.77 1.1 V
Body diode reverse recovery time trr
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
-1935ns
Body diode reverse recovery charge Qrr - 7 14 nC
Reverse recovery fall time ta-10-ns
Reverse recovery rise time tb-9-
SiS322DNT
www.vishay.com Vishay Siliconix
S17-1448-Rev. B, 18-Sep-17 3Document Number: 63569
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
14
28
42
56
70
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 3 V
V
GS
= 10 V thru 4V
V
GS
= 2 V
0
2
4
6
8
10
0 3 6 9 12 15
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS = 15 V
VDS = 20 V
VDS = 10 V
ID = 10 A
0
11
22
33
44
55
0 1 2 3 4 5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
T
C
= 125 °C
T
C
= -55 °C
0
240
480
720
960
1200
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 10 A
V
GS
= 10 V
V
GS
= 4.5 V
SiS322DNT
www.vishay.com Vishay Siliconix
S17-1448-Rev. B, 18-Sep-17 4Document Number: 63569
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2 1.5
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150
VGS(th) Variance (V)
TJ - Temperature (°C)
ID = 250 μA
ID = 5 mA
0.000
0.006
0.012
0.018
0.024
0.030
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 10 A
0
10
20
30
40
50
0.001 0.01 0.1 1 10
Power (W)
Time (s)
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specied
100 μs
100 ms
Limited by RDS(on) (1)
1 ms
IDM limited
TA = 25 °C
Single pulse BVDSS limited
10 ms
10 s
1 s
DC
I
D
limited
SiS322DNT
www.vishay.com Vishay Siliconix
S17-1448-Rev. B, 18-Sep-17 5Document Number: 63569
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
9
18
27
36
45
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
0
5
10
15
20
25
0255075100125150
Power (W)
TC - Case Temperature (°C)
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
SiS322DNT
www.vishay.com Vishay Siliconix
S17-1448-Rev. B, 18-Sep-17 6Document Number: 63569
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63569.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
t1
t2
Notes:
PDM
1. Duty cycle, D =
2. Per unit base=R
thJA = 81 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface mounted
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
Package Information
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Revison: 18-Feb-13 1Document Number: 62836
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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PowerPAK® 1212-8T
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 - 0.05 0.000 - 0.002
b 0.23 0.30 0.41 0.009 0.012 0.016
c 0.23 0.28 0.33 0.009 0.011 0.013
D 3.20 3.30 3.40 0.126 0.130 0.134
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
D3 0.48 - 0.89 0.019 - 0.035
D4 0.47 TYP. 0.0185 TYP.
D5 2.3 TYP. 0.090 TYP.
E 3.20 3.30 3.40 0.126 0.130 0.134
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 1.75 1.85 1.98 0.069 0.073 0.078
E4 0.34 TYP. 0.013 TYP.
e 0.65 BSC 0.026 BSC
K0.86 TYP. 0.034 TYP.
K1 0.35 - - 0.014 - -
H 0.30 0.41 0.51 0.012 0.016 0.020
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M0.125 TYP. 0.005 TYP.
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
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