©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
2N5551- MMBT5551 Rev. B
2N5551- MMBT5551 NPN General Purpose Amplifier
tm
April 2006
2N5551- MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6 " × 1.6" × 0.06."
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector current - Continuous 600 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Max Units
2N5551 *MMBT5551
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
Marking: 3S
2N5551 MMBT5551
TO-92
2www.fairchildsemi.com
2N5551- MMBT5551 Rev. B
2N5551- MMBT5551 NPN General Purpose Amplifier
Electrical Characteristics Ta = 25°C unless otherwise noted
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 180 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 120V, IE = 0
VCB = 120V, IE = 0, Ta = 100°C50
50 nA
µA
IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA
On Characteristics
hFE DC Current Gain IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30 250
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 0.15
0.20 V
V
VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 1.0
1.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10mA, VCE = 10V,
f = 100MHz 100 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 6.0 pF
Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 20 pF
Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0kHz 50 250
NF Noise Figure IC = 250 uA, VCE = 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz 8.0 dB
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2N5551- MMBT5551 Rev. B
2N5551- MMBT5551 NPN General Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Voltage
0.1 1 10 100
0
50
100
150
200
250
5020
52
0.5
0.2
-40
o
C
25
o
C
125
o
C
V
CE
= 5V
h
FE
- TYPICAL PULSED CURRENT GAIN
I
C
- COLLECTOR CU RRENT (mA)
1 10 100
0.0
0.1
0.2
0.3
0.4
0.5
- 40
o
C
25
o
C
125
o
C
β
= 10
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
110100
0.0
0.2
0.4
0.6
0.8
1.0
200
125
o
C
25
o
C
- 40
o
C
β
= 10
V
BESAT
- BASE EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
V
BEON
- BASE EMITTER ON VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
25 50 75 100 12
5
1
10
50
T - AMB IENT TEMPERATURE ( C)
I - C OLLECTOR CU RR EN T (nA)
A
CBO
°
V = 100V
CB
0.1 1 10 100
0
5
10
15
20
25
30
V - COLLECTOR VOLTAGE (V)
CAPA CI TAN CE (pF)
C
f = 1 .0 MHz
CE
C
cb
ib
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2N5551- MMBT5551 Rev. B
2N5551- MMBT5551 NPN General Purpose Amplifier
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance Between Emitter-Base Figure 8. Small Signal Current Gain
vs Collector Current
Figure 9. Power Dissipation
vs Ambient Temperature
Between Emitter- Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTAN C E (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 m A
C
vs Co llect or C urrent
11050
0
4
8
12
16
I - COLLECTOR CU RRENT (mA)
h - SMAL L SIGN AL CURRENT GAIN
C
FE
FRE G = 20 MHz
V = 10V
CE
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
2N5551- MMBT5551 NPN General Purpose Amplifier
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX-
PAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to r esult in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for product
development. Specifications may change in any manner with-
out notice.
Preliminary First Production This datasheet contains preliminary data, and supplementary
data will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
in order to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semi-
conductor reserves the right to make changes at any time
without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has
been discontinued by Fairchild semiconductor. The datasheet
is printed for reference information only.
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2N5551- MMBT5551 Rev. B
