LITE-ON SEMICONDUCTOR MBRF10100CT REVERSE VOLTAGE - 100 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES D A C 2 3 whelling,and polarity protection applications J F G I MECHANICAL DATA H Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.70 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) MAX. 16.50 10.40 3.50 D E 9.00 2.90 9.30 3.60 F 13.46 1.15 2.40 0.75 14.22 1.70 DIM. PIN 1 A B C ITO-220AB MIN. 15.50 10.0 3.00 M B K E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free N H L PIN 1 PIN 2 PIN 3 G H I J K 2.70 1.00 0.45 0.70 3.00 3.30 L 4.36 4.77 M 2.48 2.80 2.80 2.50 N All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward RectifiedCurrent at Tc=120 C (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave @TJ =25 C UNIT VRRM VRMS VDC 100 70 100 V V V I(AV) 10 A IFSM 120 A dv/dt 10000 V/us VF 0.85 0.75 0.95 0.85 V @TJ =25 C @TJ =125 C IR 0.1 15 mA CJ 180 pF R0JC TJ TSTG 3.0 -55 to +150 -55 to +175 C/W C C Vdis 2000 V @IF=5A @IF=5A @IF=10A @IF=10A Maximum DC Reverse Current at Rated DC Blocking Voltage MBRF10100CT TJ =25 C TJ =125 C TJ =25 C TJ =125 C Voltage Rate of Change (Rated VR) Maximum Forward Voltage, (Note 1) SYMBOL Typical Junction Capacitance, per element (Note 2) Typical Thermal Resistance (Note 3, 4) Operating Temperature Range Storage Temperature Range Dielectric Strengh from terminals to case, AC with t=1 minute, RH<30% NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. 4. Device mounted on 135mm x 135mm x 8mm Al Plate. REV. 1, Aug-2007, KTHC46 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES MBRF10100CT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 120 100 80 60 40 20 8.3ms Single Half-Sine-Wave 0 1 175 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 1000 TJ = 100 C 100 10 TJ = 25 C 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 1 0 20 40 60 80 100 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(uA) 5 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0