NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
4. Device mounted on 135mm x 135mm x 8mm Al Plate.
MBRF10100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 100
Volts
FORWARD CURRENT
- 10
Amperes
10
120
10000
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
T
J
Operating Temperature Range
C
T
STG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3, 4)
R
0JC
C/W
C
J
Typical Junction Capacitance,
per element (Note 2) pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ
=25 C
@T
J
=125 C
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage, (Note 1) V
Voltage Rate of Change (Rated VR)
@I
F
=5A
@I
F
=5A
@I
F
=10A
@I
F
=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at Tc=120 C (See Fig.1)
-55 to +150
-55 to +175
3.0
0.1
15
0.85
0.75
0.95
0.85
180
MBRF10100CT
100
70
100
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
V/us
SEMICONDUCTOR
LITE-ON
REV. 1, Aug-2007, KTHC46
V
dis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
G
I
C
E
J
B
K
A
M
D
L
N
F
HH
PIN
1 2 3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
15.50 16.50
10.40
10.0
3.00 3.50
9.30 9.00
2.90 3.60
13.46 14.22
1.15 1.70
0.75
2.70
N
M
L
K
J
I 1.00
2.40
0.70 0.45
3.00 3.30
4.36 4.77
2.48 2.80
2.80
2.50
PIN 1
PIN 3 PIN 2
@TJ
=25 C
1
10
100
1000
10000
0 20 40 60 80 100 120
RATING AND CHARACTERISTIC CURVES
MBRF10100CT
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(uA)
T
J
= 100 C
T
J
= 25 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
1000
100
10
0.1 4
T
J
= 25 C, f= 1MHz
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
20
40
60
80
100
120
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
4
0
50
10
175
8.3ms Single Half-Sine-Wave
8
0
RESISTIVE OR INDUCTIVE LOAD
CASE TEMPERATURE , C
6
2
T
J
= 125 C