PD - 97741 AUTOMOTIVE GRADE AUIRF3205 Features l l l l l l l l l HEXFET(R) Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS D G 55V RDS(on) max. 8.0m ID (Silicon Limited) 110A ID (Package Limited) S g 75A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF3205 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter 110 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) c 390 200 1.3 20 Pulsed Drain Current Single Pulse Avalanche Energy (Thermally Limited) c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw W W/C V i d EAS A 75 PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS IDM Units g 80g ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 264 ch mJ 62 A 20 mJ -55 to + 175 C 300 10 lbf in (1.1N m) y Thermal Resistance Typ. Max. --- 0.75 Case-to-Sink, Flat, Greased Surface 0.50 --- Junction-to-Ambient --- 62 RJC Junction-to-Case RCS RJA j Parameter y Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 11/10/11 AUIRF3205 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- 2.0 44 --- --- --- --- --- 0.057 --- --- --- --- --- --- --- --- --- 8.0 4.0 --- 25 250 100 -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 62A V VDS = VGS, ID = 250A S VDS = 25V, ID = 62A A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- 14 101 50 65 4.5 146 35 54 --- --- --- --- --- nC ns nH Conditions ID = 62A VDS = 44V VGS = 10V, See Fig. 6 & 13 VDD = 28V ID = 62A RG = 4.5 VGS = 10V, See Fig. 10 Between lead, f LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 3247 781 211 --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 pF f D G S Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H, RG = 25, IAS = 62A. (See Figure 12) ISD 62A, di/dt 207A/s, VDD V(BR)DSS, TJ 175C. 2 Min. Typ. Max. Units --- --- A --- --- 390 --- --- --- --- 69 143 1.3 104 215 Conditions MOSFET symbol 110 V ns nC showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 62A, VGS = 0V TJ = 25C, IF = 62A di/dt = 100A/s f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C. Ris measured at TJ of approximately 90C. www.irf.com AUIRF3205 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A Class M4 (+/- 600V) AEC-Q101-002 ESD Human Body Model Class H1C (+/- 2000V) AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRF3205 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 1 10 20s PULSE WIDTH TJ = 175 C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 10 VDS , Drain-to-Source Voltage (V) 1000 TJ = 25 C TJ = 175 C 100 10 1 V DS= 25V 20s PULSE WIDTH 4 6 8 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 12 2.5 ID = 107A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRF3205 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) Coss = Cds + Cgd 4000 Ciss 3000 2000 Coss 1000 Crss 16 VGS , Gate-to-Source Voltage (V) 6000 0 1 10 12 10 8 6 4 2 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 40 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 100 ID , Drain Current (A) 1000 10 10us 100 TJ = 25 C 1 V GS = 0 V 0.8 1.4 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 20 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 0.1 0.2 V DS= 44V V DS= 27V V DS= 11V 14 0 100 ID = 62A 2.6 100us 1ms 10 1 10ms TC = 25 C TJ = 175 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF3205 RD VDS VGS 120 LIMITED BY PACKAGE D.U.T. RG + V DD ID , Drain Current (A) 100 - 10V 80 Pulse Width s Duty Factor 60 Fig 10a. Switching Time Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V L VDS D.U.T RG 20V DRIVER + V - DD IAS 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A EAS , Single Pulse Avalanche Energy (mJ) AUIRF3205 500 TOP 400 BOTTOM ID 25A 44A 62A 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRF3205 Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + - - + + RG - dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= VDD P.W. Period * VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRF3205 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF3205 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRF3205 Ordering Information 10 Base part number Package Type Standard Pack AUIRF3205 TO-220 Form Tube Complete Part Number Quantity 50 AUIRF3205 www.irf.com AUIRF3205 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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