SIEMENS BAR 63... Silicon PIN Diode @ PIN dicde for high speed switching of RF signals @ Low forward resistance @ Very low capacitance @ For frequencies up to 3 GHz Type Marking Ordering code Pin configuration |Package 1) (tape and reel) 1 2 3 BAR 63 G3 Q62702-A1036 A - Cc |SOT-23 BAR 63-04 G4 Q62702-A1037 A Cc | C/A BAR 63-05 G5 Q62702-A1038 A A | cic BAR 63-06 G6 Q62702-A1039 Cc Cc | AYA Maximum ratings Parameter Symbol BAR 63 Unit Reverse voltage Va 50 Vv Forward current ie 100 mA Total Power dissipation Ts < 80C Prot 250 mw BAR 63-04,-05,-06 Tg < 55C 250 Operating temperature range Top -55 +150C C Storage temperature range Tstg -55...4150C C Thermal resistance Junction-ambient % Rina KAN BAR63 < 450 BAR 63-04,-05,-06 < 540 Junction-soldering point Ri us BAR64 S$ 280 BAR63-04,-05,-06 < 380 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 156 Edition A01, 23.02.95SIEMENS BAR 63... Electrical characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Value Unit min. ltyp. [max. DC characteristics Breakdown voltage Vier) V IR=5 pA 50 : : Reverse leakage Ir nA Va =20V : : 50 Forward voltage Ve Vv fe=100MmA - 0.95 1.2 Diode capacitance Cr pF Va =0V, f= 100 MHz : 0.3 Diode capacitance Cr pF Va=5V, f=1 MHz - 0.21 0.3 Forward resistance f Q fe = 5 mA, f= 100 MHz - 1.2 2 fe =10MA, f= 100 MHz - 4 - Charge carrier lifetime Ts ns fk =10mMA, IR=6mMA, fIR=3MA - 75 * Series inductance L, : 1.4 - nH Forward current /- = f(T,*Ts) Forward current /; = f(T,*Ts) BAR63 per each Diode BAR63-04,-05,-06 144 | 14a mA mA 128 128 laa 128 NN Ns | No) | Ba N 8a NY NI No te NN Ip | be NJ 6 6a A | ( | PONAG | 48 \ 48 \ 2a 24 | | | | , Lie a tit 7 ed Peiil 8 58 28 198 C 8 58 18a 198 C Ts i Ta Tg i Th Semiconductor Group 157 Edition AG1, 23.02.95SIEMENS BAR 63... Permissible puise load Ainjs = f (tp) BAR63 KAN 18! De as 8.2 a1 CB ae an om a 1ae 1a* te? ia = ta 197 1e7? 'p Permissible pulse load Anus = f (tp) BAR63-04,-05,-06 3 KW De ai 42 at 5 a tu 1 q Semiconductor Group Permissible pulse load femax / rpc = f (tp) BAR63 ~ n go oO o ' we RRR 1a te* iat tet ie 1a tet 10% s -t Pp Permissible pulse load femax/ /enc = f(t) BAR63-04,-05,-06 seonnene? oom ee ta* ja itera oat 1a * Edition A01, 23.02.95SIEMENS BAR 63... Forward current /c= f( V) 0.3 0.5 08 1 12 > VF M) Forward resistance r= f(/) Diode capacitance Cy= f (V_) f= 100 MHz f=1 MHz. 102 EHDO7 138 0.5 EHDO7139 , TTT 7 yal i r 9 Cc, pr | 4 | 0 [ | 10' pi 03-4 ety | mp aa fai \ au 0.2}- t 9 | | | 10 | Pd 0.1 tt a4 | ! 1 | | o Lu LL 1? 1077 ~~ 10 10' mA 10? 0 10 20 (30 oe Ee ame Vp Semiconductor Group 159 Edition A01, 23.02.95