Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index (Alphanumeric) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii After Market Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xiv Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 Chapter Two RF Front End ICs Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1 Chapter Three RF/IF Subsystem ICs Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1 Chapter Four Frequency Synthesis Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-1 Chapter Five RF Transistors Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1 Chapter Six RF Amplifier ICs and Modules Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-1 Chapter Seven RF CATV Distribution Amplifier Modules Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-1 Chapter Eight Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-1 Chapter Nine Packaging Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9-1 Chapter Ten Applications and Product Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA i ii MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Wireless RF Product Device Data Table of Contents Page Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v About This Revision . . . . . . . . . . . . . . . . . . . . . . . . . . vi Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . vi On-Line Access to Wireless RF Information . . . vii Data Sheet Device Index (Alphanumeric) . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . xii After Market Support . . . . . . . . . . . . . . . . . . . . . . . . xiv Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . 1-1 RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . 1-3 RF/IF Subsystems . . . . . . . . . . . . . . . . . . . . . . . . 1-7 Frequency Synthesis . . . . . . . . . . . . . . . . . . . . . 1-11 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-13 RF Amplifier ICs and Modules . . . . . . . . . . . . 1-29 RF General Purpose Linear Amplifier Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-33 CATV Distribution Amplifier Modules . . . . . . . 1-35 Chapter Two RF Front End ICs Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2-1 Chapter Three RF/IF Subsystem ICs Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . 3-1 Chapter Four Frequency Synthesis Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . 4-1 Chapter Five RF Transistors Data Sheets . . . . . 5-1 Chapter Six RF Amplifier ICs and Modules Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . 6-1 Chapter Seven RF CATV Distribution Amplifier Modules Data Sheets . . . . . . . . . . . . . 7-1 Chapter Eight Tape and Reel Specifications . . . 8-1 Chapter Nine Packaging Information . . . . . . . . . . . 9-1 Chapter Ten Applications and Product Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-1 iii iv MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Wireless RF Product Device Data FOREWORD This publication includes technical information for the several product families that comprise the Motorola portfolio of Wireless RF products. The product families include bipolar, RF BiCMOS, SiGe:C BiCMOS, LDMOS, MOSFET RF Power, and gallium arsenide chip technologies in a variety of ceramic and plastic surface mount packages. Discrete components, hybrid modules, and integrated circuits provide different levels of complexity in an effort to provide solutions for our customers' needs. All devices are in alphanumeric order in the Data Sheet Device Index of this book. Just turn to the appropriate page for technical details of the known device. Complete device specifications are provided in the form of Data Sheets which are categorized by product type into six chapters for easy reference. A Selector Guide by product family is provided at the beginning of the book to enable quick comparisons of performance characteristics and to aid you in identifying devices that meet your functional performance requirements of frequency, output power, gain, or other parameters. Chapters on Tape and Reel Options, Packaging Information, Applications and Product Literature include additional information to aid you in the design process. Applications assistance is only a phone call away -- call the nearest Semiconductor Sales office or 1-800-521-6274. Please refer to our section on On-line Access to Wireless Semiconductor Data so that you will always have easy access to the most current information available on Motorola's Wireless RF product portfolio. Refer to the End of Life Product Index section for information on products that are Not Recommended for New Design, End of Life or available through After Market Support. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. 2003 Previous Edition 2002 "All Rights Reserved" MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Printed in U.S.A. v ABOUT THIS REVISION DATA CLASSIFICATION This edition of the Wireless RF Product Device Data Library encompasses a considerable number of changes that have occurred since our last printing. Some devices have been removed from this book due to package changes or new technology replacements and many new devices have been added. Application Notes, Engineering Bulletins and Article Reprints of special interest to designers of RF and IF equipment are available on the Motorola Semiconductor Product Sector Web site or are available through the Motorola Literature Distribution Center. Phone and fax numbers for ordering literature are listed on the back cover of this book and in our Accessing Data On-line section. See Chapter Ten for a complete listing of Application Literature. For information on products that are Not Recommended for New Design, End of Life or available through After Market Support, see the End of Life Product Index section in this data book. For Cross Reference information on Motorola replacement devices, please consult your local Distributor or Motorola Sales Office. Product Preview This heading on a data sheet indicates that the device is in the formative stages or in design (under development). The disclaimer at the bottom of the first page reads: ``This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.'' vi Advance Information This heading on a data sheet indicates that the device is in sampling, pre-production, or first production stages. The disclaimer at the bottom of the first page reads: ``This document contains information on a new product. Specifications and information herein are subject to change without notice.'' Fully Released A fully released data sheet contains neither a classification heading nor a disclaimer at the bottom of the first page. This document contains information on a product in full production. Guaranteed limits will not be changed without written notice to your local Motorola Semiconductor Sales Office. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ACCESS MOTOROLA SEMICONDUCTOR TECHNICAL INFORMATION Access Data On-Line! - Use Motorola's SPS Internet Server Motorola Semiconductors has provided a World Wide Web Server to deliver Motorola SPS technical data to the global Internet community. Available online are the Product Library, Documentation Library, Tools Library, Industry Focus sites, Design Resource sites, Technical Helpline, Technical Training and Where to Buy at the following URL: http://www.motorola.com/semiconductors. See the RF and IF Design Resource site at http://www.motorola.com/rf for specific Wireless RF Product support information for: * Data sheets * Applications notes * Selector guides * Packaging information * Application information * Models * Reference designs * Reference design simulations * Circuit board artwork * Roadmaps * Press releases * Events RF Reference Designs RF Power Reference Designs provide: * RF Performance Tuned for Specific Standard Broadcast Formats * Low Cost Component Selection * Complete BOM, Layout, PCB and All Design Information Available * Integral Temperature Compensated Bias Circuits Included * Extensive RF Characterizations Motorola is pleased to offer application-specific reference designs. These application-specific reference designs show some of the many possible uses of our high power RF transistors. They provide the customer's design engineers with a fast and accurate tool to both evaluate the performance envelope and fully characterize the devices under a variety of different operating conditions. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Low-cost component selection was chosen so that the end users could transition the design and its entire Bill of Materials into a high volume base station manufacturing process and still be cost competitive with other competing technologies. The circuit board is made of a recently developed ceramic loaded thermoset plastic woven glass material that offers very low material costs, low PCB fabrication cost, and yet still has an exceptionally low dissipation factor giving low RF loss. The dielectric constant of this material is high enough to allow for compact, distributed element matching structures, yet of a reasonable value to make it relatively insensitive to fabrication and etching variations. The circuit's matching and decoupling capacitors utilize a low-cost silicon dioxide dielectric process rather than the traditional porcelain multi-layered assemblies, and they offer low ESRs, very high Q's and tight capacitance value tolerances. The reference design data sheet contains a wealth of information that customers can use to better understand the range and capabilities of the Motorola devices. Included on the data sheet are such basics as the intended end use application (GSM, W-CDMA, etc.), the typical performance level expected (2% EVM, -40 dBc ACP, etc.) and some device features such as ESD protection and good thermal stability. For more information, go to http://www.motorola.com/rf and select Tools/Hardware Tools/Reference Designs and Systems. RF LDMOS Models Motorola continues to populate its LDMOS Model Library with the LDMOS MET (Motorola's Electro Thermal) models and with the LDMOS Root models. All product models available in the RF LDMOS Model Library (Root and MET) include package, bond wire and internal matching network effects. The Motorola Electro Thermal (MET) model for RF LDMOS transistors is a nonlinear model that examines both electrical and thermal phenomena and can account for dynamic self-heating effects of device performance. It is specifically tailored to model high power RF LDMOS transistors used in wireless base station applications. Implemented in the Agilent EEsof EDA Advanced Design System, APLAC Analog Design Tool, Applied Wave Research Microwave Office, Ansoft Serenade Design Environment and Eagleware GENESYS Microwave and RF Design Suite, the MET LDMOS model is capable of performing small-signal, large-signal, harmonic-balance, noise and transient simulations. Because of its ability to simulate self-heating effects, the MET model is more vii accurate than existing models, enabling circuit designers to predict prototype performance more accurately and reduce design cycle time. The current release of the MET LDMOS model is available for these tools: best way to blend the two tools to their advantage. Reference Design Simulations are designed to provide the link between these two tools. * Agilent EEsof ADS (UNIX and PC) nonlinear circuit simulator Reference Design Simulations provide an example application of MET models in a pre-designed application circuit. Motorola has taken the time to characterize specific reference design circuits in "software form." The simulations have been chosen to represent a wide selection of RF devices under many of the major communication standards, including GSM, CDMA, W-CDMA and TDMA. * APLAC Analog Design Tool * Applied Wave Research Microwave Office * Ansoft Serenade Design Environment * Eagleware GENESYS Microwave and RF Design Suite The LDMOS Model Library is available for all major computer platforms supported by these simulators. For more information and latest releases supported, go to http://www.motorola.com/rf/models. RF Power Reference Design Simulations * Provides a link between Reference Designs and MET models * Example designs exist for a wide selection of Motorola RF devices * Demonstrates how to design an amplifier using microwave stripline techniques in the Agilent ADS environment * Provides "real-world" tutorial on how to use nonlinear models * Example designs for all major applications: GSM, CDMA, W-CDMA, TDMA * Models provide examples of CW and 2-tone signal simulation * Simulation files are provided royalty-free to allow for reuse and adaptation * The device selection and applications are being continually updated * Provides feedback path from customers to improve usability and accuracy of models Tools Provided Learning Tools Reference Design Simulations provide examples of how to use nonlinear models of RF transistors. Specifically, the user will also learn how to design an amplifier using microwave stripline matching techniques. To provide the most accurate modeling results, each simulation provides examples for CW, 2-tone and modulated signals, as applicable. Reference Design Simulation Availability The Reference Design Simulation circuits are available as downloadable Agilent ADS projects from the Motorola SPS web site. These simulation files are provided royalty-free to allow for reuse and adaptation to other application requirements. Go to http://www.motorola.com/rf and select Tools/Software Tools/Reference Design Simulations. Literature Centers Printed literature can be obtained from the Literature Centers upon request. For those items that incur a cost, the U.S. Literature Center will accept Master Card and Visa. USA/EUROPE/Locations Not Listed: Motorola Literature Distribution P.O. Box 5405 Denver, Colorado 80217 Phone: 1-800-521-6274 or 1-480-768-2130 JAPAN: Reference Design Simulations In the past, Motorola has provided application- specific reference designs that are targeted to provide a pre-designed circuit suitable for a specific application. Additionally, Motorola has also provided modeling tools, specifically MET models, to facilitate design using Computer Aided Engineering (CAE) techniques. These two pieces of the puzzle are excellent design tools; however, they are never linked to each other, leaving the customer to figure out the viii Motorola Japan Ltd. SPS, Technical Information Center 3-20-1, Minami-Azabu. Minato-ku Tokyo 106-8573 Japan Phone: 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd. Silicon Harbour Centre 2 Dai King Street, Tai Po Industrial Estate Tai Po, N.T., Hong Kong Phone: 852-26668334 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA DATA SHEET DEVICE INDEX Device Number Page Number Device Number Page Number MBC13720 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3 MHW7185CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-28 MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3 MHW7205C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-30 MBC13916 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-17 MHW7205CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-32 MC13190 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3 MHW7222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-34 MC13751 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-27 MHW7242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-36 MC13770 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-31 MHW7272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-38 MC144110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-22 MHW7292A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-39 MC144111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-22 MHW8182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-40 MC145026 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-23 MHW8185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-42 MC145027 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-23 MHW8185L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-44 MC145028 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-23 MHW8202B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-46 MC145151-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MHW8205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-48 MC145152-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MHW8205L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-50 MC145157-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MHW8222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-52 MC145158-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MHW8242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-54 MC145170-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-4 MHW8272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-55 MHL9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHW9146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-56 MHL9236M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHW9182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-58 MHL9318 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-6 MHW9186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-59 MHL9838 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-9 MHW9187 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-61 MHL18336 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-12 MHW9188 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-63 MHL18926 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13 MHW9189 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-65 MHL19338 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-14 MHW9206 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-67 MHL19926 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-15 MHW9227 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-69 MHL19936 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-16 MHW9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-71 MHL21336 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-19 MHW9242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-73 MHPA19010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-22 MHW9247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-75 MHPA21010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-25 MHW9267 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-77 MHVIC910HR2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-28 MHW9276 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-79 MHVIC915R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-35 MMG1001R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-81 MHW1223LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-3 MMG2001R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-86 MHW1224LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-5 MMM5047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36 MHW1244 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-7 MMM5062 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-56 MHW1253LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-9 MMM5063 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-75 MHW1254L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-11 MRF281SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-26 MHW1254LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-12 MRF281ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-26 MHW1303LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-14 MRF282SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-30 MHW1304LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-16 MRF282ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-30 MHW1345 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-61 MRF284R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-37 MHW1353LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-18 MRF284LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-37 MHW1354LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-20 MRF372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-46 MHW6342T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-22 MRF373AR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-57 MHW7182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-24 MRF373ALSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-57 MHW7185C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-26 MRF374A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-62 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ix DATA SHEET DEVICE INDEX -- continued Device Number Page Number Device Number Page Number MRF1511T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-72 MRF9180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-255 MRF1513T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-82 MRF9180S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-255 MRF1517T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-94 MRF18030AR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-263 MRF1518T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-106 MRF18030ASR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-263 MRF1535T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-118 MRF18030BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-268 MRF1535FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-118 MRF18030BSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-268 MRF1550T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-128 MRF18060A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF1550FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-128 MRF18060AR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF1570T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-137 MRF18060ALSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF1570FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-137 MRF18060ASR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF6522-70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-151 MRF18060B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF6522-70R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-151 MRF18060BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9002R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-158 MRF18060BLSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9030R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-165 MRF18060BSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9030LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-165 MRF18085A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-285 MRF9030MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-172 MRF18085AR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-285 MRF9030MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-172 MRF18085ALSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-285 MRF9045R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-180 MRF18085B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-290 MRF9045LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-180 MRF18085BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-290 MRF9045MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-186 MRF18085BLSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-290 MRF9045MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-186 MRF18090A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-297 MRF9060R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-194 MRF18090AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-297 MRF9060LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-194 MRF18090B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-303 MRF9060MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-202 MRF18090BS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-303 MRF9060MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-202 MRF19030R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-309 MRF9080 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF19030SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-309 MRF9080R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF19045R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-314 MRF9080SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF19045SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-314 MRF9080LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF19060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-321 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF19060R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-321 MRF9085R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF19060SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-321 MRF9085SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF19085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF9085LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF19085R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF9100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-224 MRF19085SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF9100R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-224 MRF19085LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF9100SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-224 MRF19090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-335 MRF9120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-233 MRF19090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-335 MRF9120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-233 MRF19090SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-335 MRF9130L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-241 MRF19120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-341 MRF9130LR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-241 MRF19120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-341 MRF9130LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-241 MRF19125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-348 MRF9135L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-248 MRF19125S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-348 MRF9135LR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-248 MRF19125SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-348 MRF9135LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-248 MRF21010R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-356 x MOTOROLA WIRELESS RF PRODUCT DEVICE DATA DATA SHEET DEVICE INDEX -- continued Device Number Page Number Device Number Page Number MRF21010LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-356 MRF21125SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-408 MRF21030R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-362 MRF5S21130 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF21030SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-362 MRF5S21130R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF21045R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-367 MRF5S21130S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF21045SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-367 MRF5S21130SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF21060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-375 MRF5S21150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF21060R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-375 MRF21060SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-375 MRF21085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF21085R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF21085SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF21085LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF5S21090L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-389 MRF5S21090LR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-389 MRF5S21150R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF5S21150S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF5S21150SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF5P21180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-429 MRF21180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-436 MRF21180S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-436 MRFG35003M6T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-444 MRFG35010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-451 MRFG35010MT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-459 MRF5S21090LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-389 MRFIC0970 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-92 MRF21090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-396 MRFIC1870 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-98 MRF21090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-396 MW4IC915MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-43 MRF21120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-401 MW4IC915GMBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-43 MRF21125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-408 MWIC930R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-53 MRF21125S MWIC930GR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-53 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-408 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA xi END OF LIFE PRODUCT INDEX Motorola SPS follows the industry standard "EIA-724 Product Life Cycle Data Model" to track the life cycle of its product. This model tracks the product's life cycle from "Product Newly Introduced" to "Product Phase Out." Products can be phased for a variety of reasons: improved product performance, change in technology roadmap, process obsolescence, market decline, etc. When products are discontinued, a suggested possible replacement device or an alternative source of supply for discontinued devices are made available when possible. For a list of discontinued devices with possible alternative suppliers, please contact your local Motorola sales office or authorized distributor, or visit the following URL: http://www.motorola.com/rf Wireless Infrastructure RF Products Product Last Order Date Last Ship Date Possible Replacement Not Recommended for New Design MHW1224 -- -- MHW1224LA MHW1304L -- -- MHW1304LA CA2810C Past Past MHW6342T CA2830C Past Past MHW6342T CA2832C Past Past None CA901 Past Past MHW8182B CA901A Past Past MHW8182B CA922 Past Past MHW8185 CA922A Past Past MHW8185 MHL8018 Past Past None MHL8115 Past Past None End of Life MHL8118 xii Past Past None MHW1810-001 9/1/03 3/1/04 MW4IC2020MBR1 MHW1910-001 9/1/03 3/1/04 MW4IC2020MBR1 MHW5182A Past Past MHW7182B MHW5222A Past Past None MHW6181 Past Past MHW7182B MHW6182 Past Past MHW7182B MHW6272 Past Past MHW7272A MHW7222A Past Past MHW7222B MHW7292 Past Past None MHW8185LR Past Past None MHW8185R Past Past None MHW8205R Past Past None MHW8292 Past Past None MHW910 Past 6/30/03 MHVIC910HR2 MHW916 Past 6/30/03 None MRF1507T1 Past Past MRF1511T1 or MRF1517T1 MRF182 Past Past MRF9030R1 MRF182SR1 Past Past MRF9030LSR1 MRF183 Past Past MRF9045R1 MRF183S Past Past MRF9045MR1 or MRF9045LSR1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA END OF LIFE PRODUCT INDEX -- continued Product Last Order Date Last Ship Date Possible Replacement End of Life - continued MRF183SR1 Past Past MRF9045MR1 or MRF9045LSR1 MRF183LSR1 7/31/04 1/31/05 MRF9045MR1 or MRF9045LSR1 MRF184 Past Past MRF9060R1 MRF184SR1 Past Past MRF9060LSR1 or MRF9060MR1 MRF184R1 7/31/04 1/31/05 MRF9060 MRF184LSR1 7/31/04 1/31/05 MRF9060LSR1 or MRF9060MR1 MRF185 7/31/04 1/31/05 MRF9080 MRF186 7/31/04 1/31/05 MRF9120 MRF187 7/31/04 1/31/05 MRF9085 MRF187S 7/31/04 1/31/05 MRF9085SR3 MRF1946 Past Past MRF1535T1 MRF1946A Past Past MRF1535T1 MRF20030R Past Past MRF19030R3 MRF20060R Past Past MRF19060 MRF20060RS Past Past MRF19060 MRF21120S Past Past MRF21120 MRF247 Past Past MRF1550T1 MRF2628 Past Past None MRF373 7/31/04 1/31/05 MRF373AR1 MRF373S Past Past MRF373ALSR1 MRF373LSR1 7/31/04 1/31/05 MRF373ALSR1 MRF374 7/31/04 1/31/05 MRF374A MRF492 Past Past MRF1550T1 MRF5015 Past Past None MRF6401 Past Past None MRF6404 Past Past MRF9030R1 MRF646 Past Past MRF1550T1 MRF648 Past Past MRF1550T1 MRF650 Past Past MRF1550T1 MRF652 Past Past MRF1518T1 MRF6522-060 7/31/04 1/31/05 MRF9060R1 MRF6522-10R1 7/31/04 1/31/05 MRF282SR1 MRF6522-5R1 7/31/04 1/31/05 MRF282ZR1 or MRF9002R2 MRF652S Past Past MRF1518T1 MRF847 Past Past MRF9045R1 MRF857S Past Past MRF9002R2 MRF897 Past Past MRF9045LSR1 MRF897R Past Past MRF9045R1 MRF898 Past Past MRF9060R1 MRF899 Past Past MRF9180 TPV8100B Past Past None For information on Wireless RF and IF handset products, see After Market Support at the following URL: http://www.motorola.com/rf MOTOROLA WIRELESS RF PRODUCT DEVICE DATA xiii AFTER MARKET SUPPORT For a list of discontinued devices with possible alternative suppliers, please contact your local Motorola sales office or authorized distributor, or visit the following URL: http://www.motorola.com/rf For Wireless Infrastructure products transferred to another manufacturer, see the list of Wireless Infrastructure RF products below. After market support on these parts is available through M/A-COM. For additional information, contact M/A-COM Customer Service at (310) 320-6160 x 354 (voice), clarkj@tycoelectronics.com (email) or (310) 618-9191 (FAX). xiv 2N6439 MRF137 MRF171A MRF317 MRF10005 MRF140 MRF173 MRF321 MRF1000MB MRF141 MRF173CQ MRF323 MRF10031 MRF141G MRF174 MRF327 MRF1004MB MRF148A MRF175GU MRF392 MRF10120 MRF150 MRF175GV MRF393 MRF10150 MRF151 MRF175LU MRF421 MRF10350 MRF151G MRF176GU MRF422 MRF10502 MRF154 MRF176GV MRF426 MRF1090MA MRF157 MRF177 MRF428 MRF1090MB MRF158 MRF275G MRF429 MRF1150MA MRF160 MRF275L MRF448 MRF1150MB MRF16006 MRF3104 MRF454 MRF134 MRF16030 MRF313 MRF455 MRF136 MRF166C MRF314 MRF587 MRF136Y MRF166W MRF316 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter One Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology--today AND tomorrow--and is the answer for developers who are creating innovative new products to meet their customers' need for wireless connections. Motorola pioneered RF technology and continues to drive future innovations, delivering significantly higher measurable performance over our competitors--in most cases, 15 to 30 percent. Motorola RF Solutions supports developers through unequaled integration, high terminal impedance, the most comprehensive RF toolkit in the industry, and access to our global support team. Motorola is committed to the development of new products and expansion of our product offerings to meet the increasing global demands of ISM band and personal communications systems, including cellular phone, broadband data, TV broadcast, land mobile and CATV systems. How to Use This Selector Guide The RF Monolithic Integrated Circuits and the RF/IF Integrated Circuits products in this guide are divided into three major functional categories: RF Front End ICs, RF/IF Subsystem ICs and Frequency Synthesis. Each of these categories is further subdivided based on circuit functionality. This structure differentiates highly integrated subsystem ICs from fundamental circuit building blocks and discrete transistors. The Power LDMOS Transistors, Power GaAs Transistors, Power Amplifier ICs and Modules and CATV Distribution Amplifier Modules are FIRST divided into major categories by frequency band. SECOND, within each category, parts are listed by power level. THIRD, within a frequency band, transistors are further grouped by operating voltage and, finally, output power. Applications Assistance Applications assistance is only a phone call away -- call the nearest Semiconductor Sales office or 1-800-521-6274. Access Data On-Line! Use the Motorola SPS Internet to access Motorola Semiconductor Product data at http://www.motorola.com/ semiconductors or http://www.motorola.com/rf. The SPS Internet prov ides you with ins t ant ac c es s to produc t summary pages, data sheets, selector guide information, application information, design tools, package outlines, on-line technical support and much more. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table of Contents Page RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-3 RFICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 Upconverters/Exciters . . . . . . . . . . . . . . . . . . . . . . . 1-4 Downconverters . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 Power Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 RF Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5 Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-6 RF/IF Subsystems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7 Tranceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 Miscellaneous Functions . . . . . . . . . . . . . . . . . . . . . . . . 1-8 ADCs/DACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 Encoders/Decoders . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-9 Frequency Synthesis . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-11 Single PLL Synthesizers . . . . . . . . . . . . . . . . . . . . . . . 1-12 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-12 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-13 RF High Power LDMOS Transistors . . . . . . . . . . . . . 1-14 Mobile - To 520 MHz . . . . . . . . . . . . . . . . . . . . . . . 1-14 TV Broadcast - To 1.0 GHz . . . . . . . . . . . . . . . . . . 1-14 Cellular - To 1.0 GHz . . . . . . . . . . . . . . . . . . . . . . . 1-15 PCS and 3G - To 2.1 GHz . . . . . . . . . . . . . . . . . . 1-16 RF Power GaAs Transistors . . . . . . . . . . . . . . . . . . . . 1-19 3.5 GHz - Linear Transistors . . . . . . . . . . . . . . . . 1-19 RF Low Power Transistors . . . . . . . . . . . . . . . . . . . . . 1-20 RF High Power Amplifier Line-ups . . . . . . . . . . . . . . 1-21 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-27 RF Amplifier ICs and Modules . . . . . . . . . . . . . . . . . . . . 1-29 Base Stations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-30 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-32 RF General Purpose Linear Amplifier Modules . . . . . . 1-33 RF General Purpose Linear Amplifier Modules . . . . 1-34 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-34 CATV Distribution Amplifier Modules . . . . . . . . . . . . . . . 1-35 Forward Amplifier Modules . . . . . . . . . . . . . . . . . . . . . 1-36 Reverse Amplifier Modules . . . . . . . . . . . . . . . . . . . . . 1-39 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-41 SELECTOR GUIDE 1-1 SELECTOR GUIDE 1-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF Front End ICs Motorola's RF Front End integrated circuit devices provide an integrated solution for the personal communications market. These devices are available in plastic SOT-343, SOT-363, TSSOP-16, TSSOP-20EP, QFN-20, QFN-24, or QFN-32 packages. Evaluation Boards Evaluation boards are available for RF Front End Integrated Circuits. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. Table of Contents Page RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-3 RFICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 Upconverters/Exciters . . . . . . . . . . . . . . . . . . . . . . . 1-4 Downconverters . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 Power Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 RF Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5 Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-3 RF Front End ICs RFICs Upconverters/Exciters RF Freq. Range MHz Product MC13751FC(18b) 800 to 900 1900 to 1950 Supply Volt. Range Vdc Supply Current mA (Typ) Standby Current mA (Typ) Conv. Gain dB (Typ) Output IP3 dBm (Typ) 2.7 to 2.9 53 0.025 21.5 23 24 Packaging 1307/ QFN-24 System Applicability TDMA, PCS Downconverters Input Freq. MHz LO Freq. Vdc IF Freq. (MHz) Gain (dB) NF (dB) IIP3 (dBm) Supply Current Packaging System Applicability MC13770(42,46a) (LNA) 2100 to 2170 n/a n/a 15 -5.0 1.5 5.0 0 20 3.0 mA 10 A 1345/ QFN-12 W-CDMA, PCS, PDC MC13770(43,46a) (Mixer) 2110 to 2170 2300 to 2360 2490 to 2550 190 380 10.0 8.0 -3.0 5.0 mA 1345/ QFN-12 W-CDMA, PCS, PDC Product Power Amplifiers Freq. Range MHz Supply Volt. Range Vdc Saturated Pout dBm (Typ) PAE % (Typ) Gain Pout/Pin dB (Typ) MRFIC0970(18b) 800 to 1000 2.8 to 5.5 35.2 53 30.2 1308/ QFN-20 GSM, ISM MRFIC1870(18b) 1700 to 2000 2.8 to 5.5 33 45 28 1308/ QFN-20 DCS1800, PCS 824 to 849 3.0 to 4.5 28 30 32 27.9 37.1 44.8 31.3 30.8 31.1 1440/ 9x12 mm Module AMPS, TDMA, GSM850 30 32 32.3 39.9 31.6 31.5 Product MMM5047(46a) 1850 to 1910 Packaging System Applicability TDMA, PCS1900 MMM5062(18m) 800 to 1000 1700 to 2000 2.7 to 5.5 33.4 34.0 54 43 36.2 31.0 1383/ 7x7 mm Module GSM850, GSM900, DCS1800, PCS1900 MMM5063H 800 to 2000 2.7 to 5.5 34.0 35.2 33.8 44 43 53 -- -- -- 1383/ 7x7 mm Module GSM900, DCS1800, PCS1900 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (42)In LNA section, specifications are represented in High Gain Mode first and Bypass Mode second. (43)In Mixer section, LO frequency ranges are specified for 190 MHz and 380 MHz IF. (46)To be introduced: a) 1Q03 HNew Product SELECTOR GUIDE 1-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF Building Blocks Amplifiers RF Freq. Range MHz Supply Volt. Range Vdc Supply Current mA (Typ) Standby Current A (Typ) MBC13720(18c) 400 to 2500 2.5 to 3.0 9.0 MBC13916(18c) 100 to 2500 2.7 to 5.0 4.7 Product Small Signal Gain dB (Typ) Output IP3 dBm (Typ) NF dB (Typ) Packaging <20 14.5 @ 1900 MHz 24.5 @ 1900 MHz 1.38 @ 1900 MHz 419B/ SOT-363 ISM900, 2400, PCS, CDMA - 19 @ 900 MHz 16.5 @ 900 MHz 0.9 @ 900 MHz SOT-343R General Purpose Cascode Amp for VCOs, Buffers, & LNAs System Applicability (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-5 RF Front End Integrated Circuit Packages !" # CASE 1440 (9x12 Module) SELECTOR GUIDE 1-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF/IF Subsystems Table of Contents Page Tranceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 Miscellaneous Functions . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 ADCs/DACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 Encoders/Decoders . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-9 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-7 RF/IF Subsystems Tranceivers Product MC13190FC(18b) Max Input Freq. VCC ICC 2.5-3.0 V 12 mA Rx 64 mA Tx 78 mA SB 2.5 GHz Sensitivity PLLS Baseband BW System Applicability -68 dBm @ 15 dBm S/N 1 5 MHz 2.4 GHz ISM Packaging 1311/ QFN-32 Miscellaneous Functions ADCs/DACs Product Function I/O Format Resolution Number of Analog Channels DAC Serial 6 Bits 6 MC144110(25b) MC144111(25b) Other Features Emitter-Follower Outputs 4 Suffix/ Packaging DW/751D DW/751G Encoders/Decoders Product Function Number of Address Lines Maximum Number of Address Codes Number of Data Bits Operation Suffix/ Packaging MC145026(25b) Encoder Depends on Decoder Depends on Decoder Depends on Decoder Simplex P/648, D/751B MC145027(25b) Decoder 5 243 4 Simplex 9 19,683 0 Simplex P/648,, DW/751G MC145028(25b) (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (25)Device available only from Lansdale Semiconductor after: a) 3Q03; b) 3Q04. SELECTOR GUIDE 1-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF/IF Subsystems Packages $ %&' (&$ ( %&' * () %&' ) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ( () %&' SELECTOR GUIDE 1-9 SELECTOR GUIDE 1-10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Frequency Synthesis Table of Contents Page Single PLL Synthesizers . . . . . . . . . . . . . . . . . . . . . . . . . 1-12 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-11 Frequency Synthesis Single PLL Synthesizers Maximum Frequency (MHz) Supply Voltage (V) Nominal Supply Current (mA) MC145151-2(25b) 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V Parallel Interface DW/751F MC145152-2(25b) 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V Parallel Interface, Uses External Dual-Modulus Prescaler DW/751F MC145157-2(25a) 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V Serial Interface DW/751G MC145158-2(25a) 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V Serial Interface, Uses External Dual-Modulus Prescaler DW/751G MC145170-2 100 @ 3.0 V 185 @ 4.5 V 2.7 to 5.5 2@3V 6@5V Serial Interface, Auxiliary Reference Divider, Evaluation Kit - MC145170EVK P/648, D/751B, DT/948C Product (25)Device Packaging Features available only from Lansdale Semiconductor after: a) 3Q03; b) 3Q04. Frequency Synthesis Packages $ %&' (&$ ( %&' * () %&' ) SELECTOR GUIDE 1-12 () %&' ( %&' $ MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Motorola RF Transistors Motorola continues to be the industry leader in RF transistor technology. Our current portfolio ranges from high gain and low noise devices at microwave frequencies to high power devices for fixed RF and microwave applications. Technical innovation combined with world-class manufacturing capability allows Motorola to offer world class product, service and support to its customers. From our LDMOS and GaAs portfolio, the user can choose from a variety of packages. They include plastic and ceramic that are microstrip circuit compatible or surface mountable. Many are designed for automated assembly equipment. Table of Contents RF High Power LDMOS Transistors . . . . . . . . . . . . . . . . Mobile - To 520 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . TV Broadcast - To 1.0 GHz . . . . . . . . . . . . . . . . . . . . Cellular - To 1.0 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . PCS and 3G - To 2.1 GHz . . . . . . . . . . . . . . . . . . . . . RF Power GaAs Transistors . . . . . . . . . . . . . . . . . . . . . . 3.5 GHz Linear Transistors . . . . . . . . . . . . . . . . . . . . . RF Low Power Transistors . . . . . . . . . . . . . . . . . . . . . . . . RF High Power Amplifier Line-ups . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Page 1-14 1-14 1-14 1-15 1-16 1-19 1-19 1-20 1-21 1-27 SELECTOR GUIDE 1-13 Motorola RF Transistors RF High Power LDMOS Transistors Motorola LDMOS technology is ideally suited for RF power amplifier applications. Several families of products have been targeted for specific markets including VHF and UHF portable/land mobile, 900 MHz linear cellular, GSM, TDMA and CDMA, digital television, GSM EDGE, PCS, UMTS, and W-CDMA. With the unique LDMOS characteristics, these parts offer superior thermal performance. This is due to the simplified package design, which offers excellent Class AB intermodulation performance under medium peak-to-average ratios providing a superior device choice for advanced digital modulations formats or high gain applications. Table 1. Mobile - To 520 MHz Designed for broadband VHF and UHF commercial and industrial applications. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 12.5/7.5 volt mobile, portable and base station operation. Frequency Band(37) Product Pout Watts Gain Test Signal VDD Volts (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 7.5/12.5 7.5 7.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 11/520 11.5/175 11/520 11/520 10(Min)/520 10(Min)/520 10(Min)/175 10(Min)/175 10(Min)/470 10(Min)/470 55 55 55 55 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 4.0 2.0 2.0 2.0 0.90 0.90 0.75 0.75 0.75 0.75 Pkg/Style VHF & UHF, Land Mobile Radio, Class AB MRF1513T1(18f) MRF1511T1(18f) MRF1517T1(18f) MRF1518T1(18f) MRF1535T1(18j) MRF1535FT1(18j) MRF1550T1(18j) MRF1550FT1(18j) MRF1570T1(18j)H MRF1570FT1(18j)H U U U U U U U U U U 400-520 135-175 430-520 400-520 400-520 400-520 135-175 135-175 400-470 400-470 3 CW 8 CW 8 CW 8 CW 35 CW 35 CW 50 CW 50 CW 70 CW 70 CW 466/1 466/1 466/1 466/1 1264/1 1264A/1 1264/1 1264A/1 1366/1 1366A/1 Table 2. TV Broadcast - To 1.0 GHz Frequency Band(37) Product Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W 75 CW 75 CW 130 PEP 180 PEP 50 AVG 1-Tone 1-Tone 2-Tone 2-Tone OFDM 32 32 32 32 32 18.2/860 18.2/860 17.3/860 17/860 17/860 60 60 41.2 36 24 0.89 0.63 0.58 0.5 0.37 Pkg/Style 470 - 1000 MHz, Class AB MRF373AR1(18a) MRF373ALSR1(18a) MRF374A MRF372 MRF377(46b) U U U I I/O 470-860 470-860 470-860 470-860 470-860 360B/1 360C/1 375F/1 375G/1 375G/1 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 1Q03; b) 2Q03; c) 3Q03 HNew Product SELECTOR GUIDE 1-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF High Power LDMOS Transistors (continued) Table 3. Cellular - To 1.0 GHz Product Frequency Band(37) Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W (3x) 2 PEP(41) 30 PEP 30 PEP 30 PEP 30 PEP 45 PEP 45 PEP 45 PEP 45 PEP 60 PEP 60 PEP 60 PEP 60 PEP 70 CW 70 CW 70 CW 70 CW 70 CW 70 CW 90 PEP 90 PEP 90 PEP 90 PEP 100 CW 100 CW 100 CW 120 PEP 120 PEP 130 CW 130 CW 130 CW 25 AVG 25 AVG 25 AVG 170 PEP 170 PEP 45 AVG 45 AVG 45 AVG 40 AVG 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 2-Tone 2-Tone 2-Tone 2-Tone 1-Tone 1-Tone 1-Tone 2-Tone 2-Tone 1-Tone 1-Tone 1-Tone N-CDMA N-CDMA N-CDMA 2-Tone 2-Tone N-CDMA N-CDMA N-CDMA N-CDMA 26 26 26 26 26 28 28 28 28 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 28 28 28 26 26 26 26 26 26 26 26 26 18/960 20/945 20/945 19/945 19/945 19/945 19/945 18.8/945 18.8/945 18/945 18/945 17/945 17/945 16/921,960 16/921,960 18.5/921,960 18.5/921,960 18.5/921,960 18.5/921,960 17.9/880 17.9/880 17.9/880 17.9/880 17/960 17/960 17/960 16.5/880 16.5/880 16.5/921,960 16.5/921,960 16.5/921,960 17.8/880 17.8/880 17.8/880 17.5/880 17.5/880 17/880 17/880 17/880 16.5/880 50 41 41 41.5 41.5 41 41 42 42 40 40 40 40 58 58 52 52 52 52 40 40 40 40 51 51 51 39 39 48 48 48 25 25 25 39 39 26 26 26 25.5 12 1.08 1.08 1.9 1.5 0.85 0.85 1.4 1.0 0.56 0.56 1.1 0.8 1.1 1.1 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 1.0 1.0 1.0 0.45 0.45 0.6 0.6 0.6 0.6 0.6 0.6 0.45 0.45 0.37 0.37 0.37 0.4 Pkg/ Style 800 - 1.0 GHz, Class AB MRF9002R2(18e) MRF9030MBR1(18a)H MRF9030MR1(18a) MRF9030R1(18a) MRF9030LSR1(18a)H MRF9045MBR1(18a) MRF9045MR1(18a) MRF9045R1(18a) MRF9045LSR1(18a) MRF9060MBR1(18a) MRF9060MR1(18a)H MRF9060R1(18a) MRF9060LSR1(18a) MRF6522-70 MRF6522-70R3(18i) MRF9080 MRF9080R3(18i) MRF9080SR3(18i) MRF9080LSR3(18i)H MRF9085 MRF9085R3(18i) MRF9085SR3(18i) MRF9085LSR3(18i) MRF9100H MRF9100R3(18i)H MRF9100SR3(18i)H MRF9120 MRF9120S MRF9130LH MRF9130LR3(18i)H MRF9130LSR3(18i)H MRF9135LH MRF9135LR3(18i)H MRF9135LSR3(18i)H MRF9180 MRF9180S MRF9200L(46b) MRF9200LS(46b) MRF9200LSR3(18i,46b) MRF9210(46b) U U U U U U U U U U U U U I I I I I I I I I I I/O I/O I/O I I I I I I I I I I I/O I/O I/O I/O 960 945 945 945 945 945 945 945 945 945 945 945 945 921-960 921-960 921-960 921-960 921-960 921-960 880 880 880 880 921-960 921-960 921-960 880 880 921-960 921-960 921-960 880 880 880 880 880 880 880 880 880 978/- 1337/1 1265/1 360B/1 360C/1 1337/1 1265/1 360B/1 360C/1 1337/1 1265/1 360B/1 360C/1 465D/1 465D/1 465/1 465/1 465A/1 465A/1 465/1 465/1 465A/1 465A/1 465/1 465/1 465A/1 375B/1 375H/1 465/1 465/1 465A/1 465/1 465/1 465A/1 375D/1 375E/1 465B/1 465C/1 465C/1 375G/1 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (41)Three individual transistors in a single package. (46)To be introduced: a) 1Q03; b) 2Q03; c) 3Q03 HNew Product MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-15 RF High Power LDMOS Transistors (continued) Table 4. PCS and 3G - To 2.1 GHz Product Frequency Band(37) Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 1805 - 1990 MHz, Class AB (GSM1800, GSM1900, GSM EDGE and PCS TDMA) MRF18030AR3(18i) MRF18030ASR3(18i) MRF18030BR3(18i) MRF18030BSR3(18i) MRF18060A MRF18060AR3(18i) MRF18060ASR3(18i) MRF18060ALSR3(18i) MRF18060B MRF18060BR3(18i) MRF18060BSR3(18i) MRF18060BLSR3(18i) MRF18085AH MRF18085AR3(18i)H MRF18085ALSR3(18i)H MRF18085BH MRF18085BR3(18i)H MRF18085BLSR3(18i)H MRF18090A MRF18090AS MRF18090B MRF18090BS I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 1805-1880 1805-1880 1930-1990 1930-1990 1805-1880 1805-1880 1805-1880 1805-1880 1930-1990 1930-1990 1930-1990 1930-1990 1805-1880 1805-1880 1805-1880 1930-1990 1930-1990 1930-1990 1805-1880 1805-1880 1930-1990 1930-1990 30 CW 30 CW 30 CW 30 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 85 CW 85 CW 85 CW 85 CW 85 CW 85 CW 90 CW 90 CW 90 CW 90 CW 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 14/1805,1880 14/1805,1880 14/1930,1990 14/1930,1990 13/1805,1880 13/1805,1880 13/1805,1880 13/1805,1880 13/1930,1990 13/1930,1990 13/1930,1990 13/1930,1990 15/1805,1880 15/1805,1880 15/1805,1880 12.5/1930,1990 12.5/1930,1990 12.5/1930,1990 13.5/1805,1880 13.5/1805,1880 13.5/1930,1990 13.5/1930,1990 50 50 50 50 45 45 45 45 45 45 45 45 52 52 52 50 50 50 52 52 45 45 2.1 2.1 2.1 2.1 0.97 0.97 0.97 0.97 0.97 0.97 0.97 0.97 0.64 0.64 0.64 0.64 0.64 0.64 0.7 0.7 0.7 0.7 465E/1 465F/1 465E/1 465F/1 465/1 465/1 465A/1 465A/1 465/1 465/1 465A/1 465A/1 465/1 465/1 465A/1 465/1 465/1 465A/1 465B/1 465C/1 465B/1 465C/1 2-Tone 2-Tone N-CDMA N-CDMA 2-Tone 2-Tone 2-Tone 2-Tone N-CDMA N-CDMA N-CDMA N-CDMA N-CDMA N-CDMA N-CDMA 2-Tone 2-Tone 2-Tone 26 26 26 26 26 26 26 26 26 26 26 26 28 28 28 26 26 26 13/1990 13/1990 14.5/1990 14.5/1990 12.5/1990 12.5/1990 12.5/1990 12.5/1990 13/1990 13/1990 13/1990 13/1990 14.5/1990 14.5/1990 14.5/1990 11.5/1990 11.5/1990 11.5/1990 36 36 23.5 23.5 36 36 36 36 23 23 23 23 26 26 26 35 35 35 2.1 2.1 1.65 1.65 -- 0.97 0.97 0.97 0.64 0.64 0.64 0.64 -- -- -- 0.65 0.65 0.65 465E/1 465F/1 465E/1 465F/1 -- 465/1 465/1 465A/1 465/1 465/1 465A/1 465A/1 465/1 465/1 465A/1 465B/1 465C/1 465C/1 1.9 GHz, Class AB (2-CH N-CDMA and W-CDMA) MRF19030R3(18i) MRF19030SR3(18i) MRF19045R3(18i) MRF19045SR3(18i) MRF5S19060M(46b) MRF19060 MRF19060R3(18i) MRF19060SR3(18i) MRF19085 MRF19085R3(18i) MRF19085SR3(18i) MRF19085LSR3(18i) MRF5S19090L(46b) MRF5S19090LR3(18i,46b) MRF5S19090LSR3(18i,46b) MRF19090 MRF19090S MRF19090SR3(18i) I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 30 PEP 30 PEP 9.5 AVG 9.5 AVG 60 PEP 60 PEP 60 PEP 60 PEP 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG 90 PEP 90 PEP 90 PEP (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 1Q03; b) 2Q03; c) 3Q03 HNew Product SELECTOR GUIDE 1-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF High Power LDMOS Transistors (continued) Table 4. PCS and 3G - To 2.1 GHz (continued) Frequency Band(37) Product Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 1.9 GHz, Class AB (2-CH N-CDMA and W-CDMA) (continued) MRF5S19100(46b) MRF5S19100R3(18i,46b) MRF5S19100SR3(18i,46b) MRF19120(3) MRF19120S(3) MRF19125 MRF19125S MRF19125SR3(18i) MRF5S19130(46b) MRF5S19130S(46b) MRF5S19150(46b) MRF5S19150S(46b) MRF5P20180(46b) I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 22 AVG 22 AVG 22 AVG 120 PEP 120 PEP 24 AVG 24 AVG 24 AVG 26 AVG 26 AVG 34 AVG 34 AVG 38 AVG N-CDMA N-CDMA N-CDMA 2-Tone 2-Tone N-CDMA N-CDMA N-CDMA N-CDMA N-CDMA N-CDMA N-CDMA W-CDMA 28 28 28 26 26 26 26 26 28 28 28 28 28 14/1990 14/1990 14/1990 11.7/1990 11.7/1990 13.5/1990 13.5/1990 13.5/1990 13.5/1990 13.5/1990 13.5/1990 13.5/1990 14/1990 26 26 26 34 34 22 22 22 26 26 26 26 25.5 -- -- -- 0.45 0.45 0.53 0.53 0.53 -- -- -- -- -- 465/1 465/1 465A/1 375D/1 375E/1 465B/1 465C/1 465C/1 465B/1 465C/1 465B/1 465C/1 375D/1 U U U U U U 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 4 PEP 4 PEP 10 PEP 10 PEP 30 PEP 30 PEP 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 26 26 26 26 26 26 12.5/2000 12.5/2000 11.5/2000 11.5/2000 10.5/2000 10.5/2000 33 33 28(min) 28(min) 35 35 5.74 5.74 4.2 4.2 2.0 2.0 458B/1 458C/1 458B/1 458C/1 360B/1 360C/1 2-Tone 2-Tone 2-Tone 2-Tone W-CDMA W-CDMA 2-Tone 2-Tone 2-Tone W-CDMA W-CDMA W-CDMA W-CDMA 2-Tone 2-Tone W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA 2-Tone W-CDMA W-CDMA W-CDMA 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 13.5/2170 13.5/2170 13/2170 13/2170 15/2170 15/2170 12.5/2170 12.5/2170 12.5/2170 13.6/2170 13.6/2170 13.6/2170 13.6/2170 11.7/2170 11.7/2170 14.5/2170 14.5/2170 14.5/2170 13.5/2170 13.5/2170 13.5/2170 11.4/2170 13/2170 13/2170 13/2170 35 35 33 33 23.5 23.5 34 34 34 23 23 23 23 33 33 26 26 26 26 26 26 34.5 18 18 18 5.5 5.5 2.1 2.1 1.65 1.65 1.02 1.02 1.02 0.78 0.78 0.78 0.78 0.65 0.65 0.78 0.78 0.78 0.7 0.7 0.7 0.45 0.53 0.53 0.53 360B/1 360C/1 465E/1 465F/1 465E/1 465F/1 465/1 465/1 465A/1 465/1 465A/1 465A/1 465A/1 465B/1 465C/1 465/1 465A/1 465/1 465/1 465/1 465A/1 375D/1 465B/1 465C/1 465C/1 2.0 GHz, Class A, AB MRF281SR1(18a) MRF281ZR1(18a) MRF282SR1(18a) MRF282ZR1(18a) MRF284R1(18a) MRF284LSR1(18a) 2.1 GHz, Class AB (2-CH W-CDMA, UMTS) MRF21010R1(18a) MRF21010LSR1(18a) MRF21030R3(18i) MRF21030SR3(18i) MRF21045R3(18i) MRF21045SR3(18i) MRF21060 MRF21060R3(18i) MRF21060SR3(18i) MRF21085 MRF21085R3(18i) MRF21085LSR3(18i) MRF21085SR3(18i) MRF21090 MRF21090S MRF5S21090LH MRF5S21090LR3(18i)H MRF5S21090LSR3(18i)H MRF5S21100L(46b) MRF5S21100LR3(18i,46b) MRF5S21100LSR3(18i,46b) MRF21120(3) MRF21125 MRF21125S MRF21125SR3(18i) U U I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 10 PEP 10 PEP 30 PEP 30 PEP 10 AVG 10 AVG 60 PEP 60 PEP 60 PEP 19 AVG 19 AVG 19 AVG 19 AVG 90 PEP 90 PEP 19 AVG 19 AVG 19 AVG 23 AVG 23 AVG 23 AVG 120 PEP 20 AVG 20 AVG 20 AVG (3)Internal Impedance Matched Push-Pull Transistors and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 1Q03; b) 2Q03; c) 3Q03 HNew Product (18)Tape MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-17 RF High Power LDMOS Transistors (continued) Table 4. PCS and 3G - To 2.1 GHz (continued) Product Frequency Band(37) Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 28 28 28 28 28 28 28 28 28 28 28 28 13.5/2170 13.5/2170 13.5/2170 13.5/2170 12.5/2170 12.5/2170 12.5/2170 12.5/2170 14/2170 12.1/2170 12.1/2170 13/2170 26 26 26 26 25 25 25 25 25.5 22 22 24.5 0.54 0.54 0.54 0.54 0.47 0.47 0.47 0.47 0.40 0.46 0.46 -- 465B/1 465B/1 465C/1 465C/1 465B/1 465B/1 465C/1 465C/1 375D/1 375D/1 375E/1 375D/1 2.1 GHz, Class AB (2-CH W-CDMA, UMTS) (continued) MRF5S21130H MRF5S21130R3(18i)H MRF5S21130SH MRF5S21130SR3(18i)H MRF5S21150H MRF5S21150R3(18i)H MRF5S21150SH MRF5S21150SR3(18i)H MRF5P21180H MRF21180(3) MRF21180S(3) MRF5P21240(46c) I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 28 AVG 28 AVG 28 AVG 28 AVG 33 AVG 33 AVG 33 AVG 33 AVG 38 AVG 38 AVG 38 AVG 52 AVG W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA W-CDMA (3)Internal Impedance Matched Push-Pull Transistors and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 1Q03; b) 2Q03; c) 3Q03 (18)Tape SELECTOR GUIDE 1-18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF Power GaAs Transistors Motorola power GaAs transistors are made using an InGaAs PHEMT epitaxial structure for superior RF efficiency and linearity. The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and are grouped according to frequency range and type of application. Parts are listed first by order of operating voltage, then by increasing output power. Table 1. 3.5 GHz - Linear Transistors Product Frequency Band(37) Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/GHz Eff. (Typ) % JC C/W Pkg/ Style W-CDMA(44) W-CDMA(44) W-CDMA(44) W-CDMA(44) W-CDMA(44) W-CDMA(44) W-CDMA(44) 12 12 6 12 12 12 12 10/3.5 12.5/3.5 9/3.5 11.5/3.5 10/3.5 10/3.5 10/3.5 30 26 24 25 30 28 26 -- -- -- -- 4.8(15) -- -- 466/1 466/1 466/1 466/1 360D/1 466/1 -- 3.5 GHz, Class AB (WLL, BWA, W-CDMA) MRFG35002MT1(18f,46b) MRFG35003MT1(18f,46b) MRFG35003M6T1(18f)H MRFG35005MT1(18f,46b) MRFG35010 MRFG35010MT1(18f)H MRFG35030(9) U U U U U U I/O 3.5 G 3.5 G 3.5 G 3.5 G 3.5 G 3.5 G 3.5 G 0.2 AVG 0.3 AVG 0.45 AVG 0.45 AVG 1 AVG 0.9 AVG 4 AVG (9)In development. A = 5.3 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (44)Peak-to-Average Power Ratio = 10 dB (46)To be introduced: a) 1Q03; b) 2Q03; c) 3Q03 HNew Product (15)Class MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-19 RF Low Power Transistors Gain - Bandwidth NFmin @ f Gain @ f Maximum Ratings f GHz IC mA Typ dB 15 20 Typ Product MBC13900(18c) GHz V(BR) CEO Volts IC mA 17 1.0 7.0 20 14 2.0 GHz Typ dB 1.0 1.0 1.3 2.0 Packaging 318M/ SOT-343 SOT 343 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. SELECTOR GUIDE 1-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF High Power Amplifier Line-ups # ) +) # # ) +) Mobile - UHF 400 - 520 MHz , # ) +) , # # ) +) Mobile - VHF 135 - 175 MHz # ) +) # # ) +) Mobile - UHF 400 - 470 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-21 RF High Power Amplifier Line-ups (continued) # , ) * * * ) # ) # Broadcast 470 - 860 MHz # # , ) * * * ) ) # # Broadcast 470 - 860 MHz SELECTOR GUIDE 1-22 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF High Power Amplifier Line-ups (continued) # , ) * * * ) # ) # Broadcast 470 - 860 MHz # , ) * * * ) # ) # Broadcast 470 - 860 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-23 RF High Power Amplifier Line-ups (continued) GSM and EDGE - 900 MHz Ceramic Hybrid Plastic # # # # # # # # # # # # # - - - ## # -.&-# # -.& # )& )& GSM and EDGE - 1800 MHz # Ceramic SELECTOR GUIDE 1-24 Hybrid - - -$ Plastic -.& )& # # # MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF High Power Amplifier Line-ups (continued) GSM and EDGE - 1900 MHz # Ceramic Hybrid -$ - - - Plastic -.& )& # # # N-CDMA - 1900 MHz Ceramic # Hybrid - - - -$ Plastic -.& )& MOTOROLA WIRELESS RF PRODUCT DEVICE DATA # # # # # # # # # # # #$ SELECTOR GUIDE 1-25 RF High Power Amplifier Line-ups (continued) W-CDMA - 2200 MHz Ceramic # # # # # # # # # # # # #$ #$ #$ Hybrid - -$ -.& )& Plastic WLL - 3500 MHz ) +) #* Ceramic Plastic SELECTOR GUIDE 1-26 #* #* #* MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF Transistor Packages / & / & / & ( / & - / & / & / & / & 0 / & * / & / & ( / & ( / & / & / & / & / & / & / PLASTIC $( , MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-27 RF Transistor Packages (continued) PLASTIC $$ / PLASTIC / PLASTIC / PLASTIC )2" 5 !32 "4 / PLASTIC (4! "4 / PLASTIC 1!23 "4 / PLASTIC 3842793 "4 / PLASTIC )2" 5 !32 "4 *!! )267 / PLASTIC 1!23 "4 3842793 "4 ."8:26 SELECTOR GUIDE 1-28 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Motorola RF Amplifier ICs and Modules Motorola's RF portfolio includes many hybrid designs optimized to perform in narrowband base station transmitter applications and IC designs optimized for wideband applications. Motorola modules feature two or more active transistors (LDMOS or GaAs die technology) and their associated 50 ohm matching networks. Circuit substrate and metallization have been selected for optimum performance and reliability. For PA designers, IC driver devices offer the benefits of multiple gain stages in one package with most of the decoupling and matching circuitry incorporated into a single low-cost plastic device. Table of Contents Page RF Amplifier ICs and Modules . . . . . . . . . . . . . . . . . . . . 1-29 Base Stations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-30 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-32 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-29 Motorola RF Amplifier ICs and Modules Complete amplifiers with 50 ohm input impedances are available for all popular base station transmitter systems, including GSM and CDMA, covering frequencies from 800 MHz up to 2.2 GHz. Base Stations Designed for applications such as macrocell drivers and microcell output stage, these Class AB amplifiers are ideal for base station systems with power requirements up to 30 watts. Table 1. Base Station IC Drivers Frequency MHz P1dB Watts Gain (Typ) dB Supply Voltage Volts Class MHVIC915R2(18e,46a) 921-960 746-960 10 15 39 30 26 26 AB AB MW4IC915MBR1(18a)H 860-960 15 30 26 AB MW4IC915GMBR1(18a)H 860-960 15 30 26 AB MWIC930R1(18a)H 746-960 30 30 27 AB MWIC930GR1(18a)H 746-960 30 30 27 AB MW4IC2020MBR1(18a,46a) 1805-1990 20 29 26 AB MW4IC2020GMBR1(18a,46a) 1805-1990 20 29 26 AB MHVIC2115R2(18e)H MW4IC2230MBR1(18a,46b) MW4IC2230GMBR1(18a,46b) 2110-2170 2110-2170 2110-2170 15 30 30 30 32 32 26 28 28 AB AB AB Product MHVIC910HR2(18e) System Application Die Technology Pkg/Style GSM900 N-CDMA, GSM/GSM EDGE N-CDMA, GSM/GSM EDGE N-CDMA, GSM/GSM EDGE N-CDMA, GSM/GSM EDGE N-CDMA, GSM/GSM EDGE N-CDMA, GSM/GSM EDGE N-CDMA, GSM/GSM EDGE W-CDMA W-CDMA W-CDMA LDMOS LDMOS 978/- 978/- LDMOS 1329/1 LDMOS 1329A/1 LDMOS 1329/1 LDMOS 1329A/1 LDMOS 1329/1 LDMOS 1329A/1 LDMOS LDMOS LDMOS 978/- 1329/1 1329A/1 Table 2. Base Station Module Drivers Designed for applications such as macrocell drivers and microcell output stage, these Class AB amplifiers are ideal for base station systems with power requirements up to 10 watts. Product MHPA18010(46a) MHPA19010H MHPA21010H Frequency MHz P1dB Watts Gain (Min) dB Supply Voltage Volts Class System Application Die Technology Pkg/Style 1805-1880 1930-1990 2110-2170 10 10 10 24.5 24.5 23.7 28 28 28 AB AB AB N-CDMA PCS1900 W-CDMA LDMOS LDMOS LDMOS 301AP/3 301AP/3 301AP/3 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (46)To be introduced: a) 1Q03; b) 2Q03 HNew Product SELECTOR GUIDE 1-30 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RF Amplifier ICs and Modules: Base Stations (continued) Table 3. Base Station Module Pre-Drivers These 50 ohm amplifiers are recommended for modern multi-tone CDMA, TDMA and UMTS base station pre-driver applications. Their high third-order intercept point, tight phase and gain control, and excellent group delay characteristics make these devices ideal for use in high-power feedforward loops. Ultra-Linear (for CDMA, W-CDMA, TDMA, Analog) - Class A (LDMOS Die) - Lateral MOSFETs Product MHL9838 MHL9236 MHL9236M MHL9318 MHL18336 MHL18926 MHL19338 MHL19926 MHL19936 MHL21336 Frequency Band MHz VDD (Nom.) Volts IDD (Nom.) mA Gain (Nom.) dB Gain Flatness (Typ) dB P1dB (Typ) dBm 3rd Order Intercept (Typ) dBm NF (Typ) dB Pkg/ Style 800-925 800-960 800-960 860-900 1800-1900 1805-1880 1900-2000 1930-1990 1900-2000 2110-2170 28 26 26 28 26 26 28 26 26 26 770 550 550 500 500 1100 500 1000 1400 500 31 30.5 30.5 17.5 30 28.6 30 29.4 29 31 .1 .1 .1 .1 .2 .3 .1 .3 .2 .15 39 34 34 35.5 36 40 36 40 41 35 50 47 47 49 46 50 46 50 49.5 45 3.7 3.5 3.5 3.0 4.2 4.2 4.2 4.2 4.2 4.5 301AP/1 301AP/1 301AP/2 301AS/1 301AP/1 301AY/1 301AP/1 301AY/1 301AY/1 301AP/1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-31 RF Amplifier ICs and Modules Packages $ / ; ; / ) / PLASTIC $$ / / / PLASTIC )2" 5 !32 "4 / PLASTIC )2" 5 !32 "4 *!! )267 SELECTOR GUIDE 1-32 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Motorola RF General Purpose Linear Amplifier Modules Motorola general purpose linear amplifier modules are designed and specified for 50 ohm applications where linearity and dynamic range are essential. Table of Contents Page RF General Purpose Linear Amplifier Modules . . . . . . 1-34 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-34 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-33 Motorola RF General Purpose Linear Amplifier Modules This device has been optimized for 50 ohm applications. It was designed for multi-purpose applications where linearity and dynamic range are of primary concern. General Purpose Linear Amplifier Modules -- Class A - Silicon Bipolar Frequency Band VCC (Nom) ICC (Nom) MHz Volts 10-200 24 Product MHW1345H Gain Flatness (Typ) mA Gain (Nom) @ 100 MHz dB 3rd Order Intercept (Typ) dB P1dB (Typ) @ 200 MHz dBm 310 34.5 dBm NF (Typ) @ 200 MHz dB Pkg/Style 1.0 28 44 3.8 1302/1 Note: Possible replacement for CA2830C. HNew Product RF General Purpose Linear Amplifier Module Package / SELECTOR GUIDE 1-34 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Motorola CATV Distribution Amplifier Modules Motorola Hybrids are manufactured using the latest CATV generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels. Additions to our CATV product family include 40-870 MHz high output gallium arsenide (GaAs) power doublers as well as low distortion, low power consumption reverse amplifiers. Table of Contents CATV Distribution Amplifier Modules . . . . . . . . . . . . . . . Forward Amplifier Modules . . . . . . . . . . . . . . . . . . . . . Reverse Amplifier Modules . . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Page 1-35 1-36 1-39 1-41 SELECTOR GUIDE 1-35 Motorola CATV Distribution Amplifier Modules Motorola Hybrids are manufactured using the latest generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels. Forward Amplifier Modules 40-1000 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid Gain (Nom) @ 50 MHz Product Channel Loading Capacity p y dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc DC Current Noise Figure @ 1000 MHz dBmV/CH dBc 152 CH 152 CH mA Typ dB Max Pkg/ Style +38 +38 -63(40) -61(40) -61 -58 -61 -59 210 318 7.5 8.0 714Y/1 1302/1 DC Current Noise Figure @ 870 MHz Preamplifiers MHW9182B MHW9242A 18.5 23.2 152 152 40-870 MHz High Output Hybrids, VCC = 24 Vdc, Class A -- GaAs Maximum Distortion Specifications Hybrid Gain (Nom) @ 870 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc dBmV/CH dBc 132 CH 132 CH mA Typ dB Max Pkg/ Style Preamplifiers MHW9146H MHW9186H MHW9206H MHW9236(46a) MHW9276H 14.3 18.5 20.2 23.6 27.9 132 132 132 132 132 +44 +44 +44 +44 +44 -60(36) -60(36) -59(36) -60(36) -60(36) -60 -58 -57 -60 -60 -55 -52 -51 -53 -53 245 250 245 255 250 5.5 5.0 4.5 6.0 6.5 1302/1 1302/1 1302/1 1302/1 1302/1 20 20.3 20.3 22.1 24.9 27.6 132 132 132 132 132 132 +48 +48 +48 +48 +48 +48 -62(34) -62(34) -62(34) -62(34) -62(34) -60(34) -56 -56 -56 -56 -56 -56 -55 -55 -55 -55 -54 -54 425 425 425 425 440 440 4.5 4.5 4.5 4.5 7.0 7.0 1302/1 1302/1 1302/2 1302/1 1302/1 1302/1 Power Doublers MHW9187 MHW9188H MHW9189(35)H MHW9227H MHW9247H MHW9267H (34)Composite 2nd order; Vout = +48 dBmV/ch image of MHW9188 (36)Composite 2nd order; V out = +44 dBmV/ch (40)Composite 2nd Order; V out = +38 dBmV/ch (46)To be introduced: a) 1Q03; b) 2Q03 HNew Product (35)Mirror SELECTOR GUIDE 1-36 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CATV Distribution: Forward Amplifier Modules (continued) 40-870 MHz High Output MMIC, VCC = 24 Vdc, Class A -- GaAs Maximum Distortion Specifications Hybrid Gain (Nom) @ 870 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc DC Current Noise Figure @ 870 MHz dBmV/CH dBc 132 CH 132 CH mA Typ dB Max Pkg/ Style Preamplifiers MMG1001R2(18e)H 18.5 132 +44 -58 -56 -52 250 5.0 978-03 19.5 132 +48 -60 -54 -53 425 4.5 978-03 DC Current Noise Figure @ 870 MHz Power Doublers MMG2001R2(18e)H 40-870 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid Gain (Nom) @ 870 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc dBmV/CH dBc 128 CH 128 CH mA A Typ dB Max Pk / Pkg/ Style +38 -66(40) -63 -62 220 7.0 1302/1 DC Current Noise Fi Figure @ 860 MHz Preamplifiers MHW8202BH 20.9 128 40-860 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid y G i Gain (Nom) @ 50 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation FM = 55 MHz dBc dBc dBmV/CH dBc 128 CH 128 CH mA A Typ dB Max Pk / Pkg/ Style 7.5 7.0 7.5 7.0 714Y/1 1302/1 1302/1 1302/1 Preamplifiers MHW8182B MHW8222B MHW8242A MHW8272A 18.5 21.9 24 27.2 128 128 128 128 +38 +38 +38 +38 -64(40) -60(40) -62(40) -64(40) -66 -64 -64 -64 -65 -63 -62 -62 220 220 318 310 18.5 18.8 19.5 19.8 128 128 128 128 +40 +40 +40 +40 -62(39) -62(39) -60(39) -60(39) -63 -64 -63 -63 -64 -64 -64 -64 365 400 365 400 Power Doublers MHW8185L(21) MHW8185 MHW8205L(22) MHW8205 8.5* 8.0 8.5* 8.0 *@ 870 MHz 714Y/1 714Y/1 714Y/1 714Y/1 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units. (21)Low DC Current Version of MHW8185; Typical I CC @ Vdc = 24 V is 365 mA. (22)Low DC Current Version of MHW8205; Typical I CC @ Vdc = 24 V is 365 mA. (39)Composite 2nd order; V out = +40 dBmV/ch (40)Composite 2nd Order; V out = +38 dBmV/ch HNew Product MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-37 CATV Distribution: Forward Amplifier Modules (continued) 40-750 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid y G i Gain (Nom) @ 50 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation FM = 55 MHz dBc dBc DC Current Noise Figure Fi @ 750 MHz dB Max dBmV/CH dBc 110 CH 110 CH mA A Typ +40 +40 +40 +40 +40 -63(39) -60(39) -62(39) -64(39) -60(39) -66 -61 -63 -64 -60 -64 -60 -61 -60 -60 220 220 318 310 310 Pk / Pkg/ Style Preamplifiers MHW7182B MHW7222B MHW7242A MHW7272A MHW7292A H 18.5 21.9 24 27.2 29 110 110 110 110 110 6.5 6.5 7.0 6.5 6.5* *@ 770 MHz 714Y/1 1302/1 1302/1 1302/1 1302/1 40-750 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar (continued) Maximum Distortion Specifications Hybrid y G i Gain (Nom) @ 50 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation FM = 55 MHz dBc dBc DC Current Noise Figure Fi @ 750 MHz dBmV/CH dBc 110 CH 110 CH mA A Typ dB Max Pk / Pkg/ Style +44 +44 +44 +44 -64(36) -64(36) -63(36) -63(36) -61 -62 -61 -61 -63 -63 -62 -62 370 400 365 400 7.5 7.5 7.5 7.5 714Y/1 714Y/1 714Y/1 714Y/1 DC Current Noise Figure @ 550 MHz Power Doublers MHW7185CL MHW7185C MHW7205CL MHW7205C 18.5 18.8 19.5 19.8 110 110 110 110 40-550 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid Gain (Nom) @ 50 MHz Product Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc dBmV/CH dBc 77 CH 77 CH mA A Typ dB Max Pk / Pkg/ Style +44 -57(36) -57 -57 310 6.5 1302/1 Forward Amplifiers MHW6342T 34.5 77 (36)Composite 2nd order; Vout = +44 dBmV/ch 2nd order; Vout = +40 dBmV/ch HNew Product (39)Composite SELECTOR GUIDE 1-38 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Reverse Amplifier Modules 5-200 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid y Gain (Nom) @ 10 MHz Product MHW1244 Channel Loading Capacity dB 24 22, 26 Output Level 2nd Order Test(30) Composite Triple Beat Cross Modulation dBc dBc DC Current Noise Figure @ 175 MHz dBmV/ CH dBc 22 CH 26 CH 22 CH 26 CH mA Typ dB Max Pkg/ Style +50 -72 -68 -67.5(19) -61 -61(19) 210 5.0 1302/1 DC Current Noise Figure @ 200 MHz Low Current Amplifiers -- 5-200 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid y G i Gain (Nom) @ 5 MHz Product MHW1223LA MHW1253LA MHW1303LA Channel Loading Capacity dB 22.7 25.5 30.8 6,10 6,10 6,10 Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc dBc dBmV/ CH 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ dB Max Pkg/ Style +50 +50 +50 -68 -68 -68 -65 -66 -65 -75 -75 -74 -66 -66 -64 -65 -65 -64 -60 -61 -58 95 95 95 7.0 6.5 5.7 1302/1 1302/1 1302/1 DC Current Noise Figure @ 150 MHz Low Current Amplifiers -- 5-150 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid y Gain (Nom) @ 5 MHz Product MHW1353LA Channel Loading Capacity dB 35.2 6,10 Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc dBc dBmV/ CH 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ dB Max Pkg/ Style +50 -68 -65 -73 -62 -63 -57 95 5.4 1302/1 DC Current Noise Figure @ 65 MHz Low Current Amplifiers -- 5-65 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid y G i Gain (Nom) @ 5 MHz Product MHW1224LA MHW1254LA MHW1304LA MHW1354LA Channel Loading Capacity dB 22.7 25.5 30.8 35.2 6,10 6,10 6,10 6,10 Output Level 2nd Order Test Composite Triple Beat Cross Modulation dBc dBc dBc dBmV/ CH 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ dB Max Pkg/ Style +50 +50 +50 +50 -68 -68 -68 -68 -65 -66 -65 -65 -75 -75 -74 -73 -66 -66 -64 -62 -65 -65 -64 -63 -60 -61 -58 -57 95 95 95 95 7.0 6.5 5.7 5.4 1302/1 1302/1 1302/1 1302/1 (19)Typical (30)Channels 2 and A @ 7 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-39 CATV Distribution: Reverse Amplifier Modules (continued) Low Current Amplifiers -- 5-50 MHz Hybrids, VCC = 24 Vdc, Class A -- Silicon Bipolar Maximum Distortion Specifications Hybrid Gain (Nom) @ 5 MHz Product dB MHW1254L 25 (30)Channels Channel Loading p y Capacity 4 Output Level 2nd Order Test((30)) Composite Triple Beat Cross Modulation dBc dBc DC Current Noise Figure @ 50 MHz dBmV/CH dBc 3 CH 4 CH mA Typ dB Max Pkg/ Style +50 -70 -70 -62 115 4.5 1302/1 2 and A @ 7 SELECTOR GUIDE 1-40 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CATV Distribution Amplifier Module Packages / / / ; MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SELECTOR GUIDE 1-41 SELECTOR GUIDE 1-42 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Two RF Front End ICs - Data Sheets Device Number Page Number RFICs Upconverter/Exciter MC13751 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-27 Downconverter MC13770 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-31 Power Amplifiers MRFIC0970 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-92 MRFIC1870 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-98 MMM5047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36 MMM5062 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-56 MMM5063 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-75 RF Building Blocks Amplifiers MBC13720 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3 MBC13916 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-17 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2-1 2-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Technical Data Sheet MBC13720/D Rev. 1, 01/2002 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch (Scale 2:1) Package Information Plastic Package Case 419B (SOT-363) Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is external to allow maximum design flexibility. The LNA has two selectable current settings as well as standby mode. The LNA will operate from a 2.5 to 3.0 V supply. The MBC13720 is fabricated using Motorola's Advanced RF BiCMOS process with the SiGe:C option and housed in an ultra small SOT-363 surface mount package. * Selectable Current, 5.0 mA or 11 mA * Standby Mode to Turn Off Device Completely * High Input IP3: 10 dBm @ 1.9 GHz 13 dBm @ 2.4 GHz * Low Noise Figure: 1.38 dB @ 1.9 GHz 1.55 dB @ 2.4 GHz * Gain @ 9.0 mA, 2.75 V: 14.5 dB @ 1.9 GHz 12 dB @ 2.4 GHz * Suitable for use from 400 MHz to 2.4 GHz * Bias Stabilized for Device and Temperature Variations * Ultra Small SOT-363 Surface Mount Package * Available Only in Tape and Reel Packaging MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13720 2-3 Specifications EN1 EN2 VCC Bias Control RF In RF Out Figure 1. Simplified Block Diagram 1 Specifications Table 1. Maximum Ratings Ratings Symbol Value Unit Supply Voltage VCC 3.3 V Storage Temperature Range Tstg -65 to 150 C Operating Ambient Temperature Range TA -30 to 85 C NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 550 V and Machine Model (MM) 50 V. Additional EST data available upon request. Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Operating Voltage VCC 2.5 2.7 3.0 V Frequency Range fRF 400 - 2400 MHz Table 3. Electrical Characteristics (VCC = 2.75, TA = 25C) Characteristic Symbol Current Consumption Low IP3 High IP3 Bypass ICC Input/Output Return Loss Low IP3 High IP3 Bypass RL MBC13720 2-4 Min Typ Max Unit - 5.0 11 0 - mA mA A - 10 10 12 - dB MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Specifications Table 3. Electrical Characteristics (Continued) (VCC = 2.75, TA = 25C) Characteristic Symbol RF Gain (900 MHz) Low IP3 High IP3 Bypass G RF Gain (1.9 GHz) Low IP3 High IP3 Bypass G RF Gain (2.4 GHz) Low IP3 High IP3 Bypass G Noise Figure 900 MHz 1.9 GHz 2.4 GHz NF Input IP3 (900 MHz) Low IP3 High IP3 Bypass IIP3 Input IP3 (1.9 GHz) Low IP3 High IP3 Bypass IIP3 Input IP3 (2.4 GHz) Low IP3 High IP3 Bypass IIP3 Output 1dB Compression (900 MHz) Low IP3 High IP3 Bypass P1dB Output 1db Compression (1.9 GHz) Low IP3 High IP3 Bypass P1dB Output 1dB Compression (2.4 GHz) Low IP3 High IP3 Bypass P1dB Reverse Isolation Low IP3 High IP3 |S12| MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Min Typ Max - 20 21 -2.9 - - 13 14.5 -2.5 - - 11.5 12 -2.8 - - 1.2 1.38 1.55 - - -3.5 10 27 - - 4.0 10 29 - - 6.0 13 25 - - 12 11.5 5.0 - - 11 11.5 5.0 - - 14 14 5.0 - - 25 20 - Unit dB dB dB dB dBm dBm dBm dBm dBm dBm dB MBC13720 2-5 Specifications Table 4. Truth Table NOTE: MBC13720 2-6 EN1 EN2 State Current Consumption 0 0 Standby < 20 A 0 1 Bypass 0 A 1 0 High IP3 11 mA (approx.) 1 1 Low IP3 5.0 mA (approx.) Logic state of 1 equals VCC voltage. Logic state of 0 equals ground potential. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Specifications Table 5. Low IP3 Mode Scattering Parameters (VCC = 2.7 V, EN1 = High, EN2 = High) f (MHz) S21 S11 S12 S22 |S11| |S11| |S11| |S11| 100 0.811 -7 11.939 168 0.010 39 0.890 -5 200 0.787 -14 11.375 157 0.015 55 0.875 -9 300 0.756 -20 10.789 148 0.021 61 0.853 -12 400 0.706 -24 9.892 138 0.026 65 0.819 -15 500 0.673 -28 8.949 131 0.031 68 0.796 -17 600 0.636 -31 8.293 125 0.036 69 0.772 -19 700 0.602 -34 7.590 119 0.040 70 0.750 -21 800 0.575 -36 6.987 114 0.045 72 0.732 -22 900 0.553 -38 6.457 109 0.050 73 0.716 -24 1000 0.531 -39 5.972 105 0.055 74 0.702 -25 1100 0.514 -40 5.566 101 0.060 75 0.690 -26 1200 0.500 -42 5.218 98 0.065 76 0.680 -27 1300 0.488 -43 4.884 95 0.070 77 0.671 -28 1400 0.477 -44 4.629 92 0.075 77 0.664 -29 1500 0.469 -45 4.373 89 0.081 78 0.657 -30 1600 0.458 -46 4.136 87 0.087 79 0.651 -31 1700 0.455 -47 3.938 84 0.093 79 0.645 -32 1800 0.450 -48 3.762 82 0.099 80 0.641 -33 1900 0.445 -49 3.614 80 0.105 80 0.636 -34 2000 0.442 -50 3.479 78 0.112 81 0.631 -35 2100 0.440 -51 3.352 76 0.119 81 0.625 -37 2200 0.438 -52 3.223 74 0.126 82 0.621 -38 2300 0.440 -53 3.127 72 0.135 82 0.619 -39 2400 0.440 -55 3.044 70 0.144 82 0.615 -41 2500 0.443 -57 2.966 68 0.154 82 0.610 -43 2600 0.446 -59 2.886 66 0.165 83 0.603 -45 2800 0.447 -64 2.778 62 0.189 83 0.589 -50 3000 0.458 -71 2.691 58 0.221 82 0.570 -56 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13720 2-7 Specifications Table 6. High IP3 Mode Scattering Parameters (VCC = 2.7 V, EN1 = High, EN2 = Low) f (MHz) MBC13720 2-8 S21 S11 S12 S22 |S11| |S11| |S11| |S11| 100 0.661 -8 21.189 161 0.010 36 0.829 -6 200 0.629 -14 18.913 146 0.014 54 0.801 -10 300 0.583 -20 16.730 134 0.019 61 0.764 -14 400 0.544 -21 14.168 123 0.024 67 0.726 -15 500 0.526 -23 12.141 116 0.029 71 0.709 -16 600 0.502 -25 10.757 111 0.034 73 0.690 -17 700 0.486 -26 9.523 106 0.039 75 0.676 -18 800 0.473 -27 8.531 101 0.044 76 0.665 -19 900 0.464 -28 7.725 98 0.050 77 0.656 -20 1000 0.457 -29 7.028 94 0.056 78 0.650 -21 1100 0.450 -30 6.461 92 0.061 79 0.643 -22 1200 0.446 -31 5.990 89 0.067 79 0.639 -23 1300 0.445 -32 5.551 86 0.073 80 0.634 -24 1400 0.443 -33 5.226 84 0.079 80 0.632 -25 1500 0.440 -35 4.903 82 0.085 80 0.628 -26 1600 0.437 -35 4.611 80 0.091 80 0.626 -27 1700 0.439 -37 4.370 78 0.097 80 0.623 -28 1800 0.439 -38 4.160 76 0.103 81 0.622 -29 1900 0.437 -40 3.981 74 0.111 81 0.618 -31 2000 0.440 -41 3.822 73 0.117 81 0.617 -32 2100 0.439 -42 3.675 71 0.124 81 0.613 -34 2200 0.443 -44 3.530 69 0.132 81 0.612 -35 2300 0.444 -45 3.416 68 0.140 82 0.611 -37 2400 0.448 -48 3.322 66 0.149 82 0.608 -38 2500 0.452 -50 3.236 64 0.159 81 0.605 -41 2600 0.456 -52 3.151 63 0.169 82 0.600 -43 2800 0.460 -57 3.032 59 0.193 81 0.589 -48 3000 0.472 -65 2.943 55 0.223 80 0.573 -54 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Specifications Table 7. Bypass Mode Scattering Parameters (VCC = 2.7 V, EN1 = Low, EN2 = High) f (MHz) S21 S11 S12 S22 |S11| |S11| |S11| |S11| 100 0.958 -11 0.115 79 0.116 80 0.950 -8 200 0.921 -21 0.222 70 0.224 70 0.925 -16 300 0.881 -30 0.318 61 0.319 61 0.889 -23 400 0.832 -38 0.399 53 0.396 53 0.849 -29 500 0.786 -45 0.457 45 0.462 46 0.806 -35 600 0.737 -52 0.515 39 0.513 39 0.764 -41 700 0.693 -57 0.552 33 0.553 33 0.724 -45 800 0.654 -63 0.585 28 0.584 28 0.689 -49 900 0.618 -67 0.610 23 0.609 23 0.655 -53 1000 0.587 -72 0.626 19 0.627 19 0.626 -57 1100 0.561 -76 0.642 16 0.643 15 0.598 -61 1200 0.533 -80 0.655 12 0.654 12 0.573 -64 1300 0.514 -83 0.660 9.0 0.663 8 0.549 -67 1400 0.493 -87 0.673 6.0 0.669 5 0.527 -71 1500 0.478 -90 0.672 2.0 0.673 2 0.506 -74 1600 0.461 -93 0.674 -1.0 0.676 -1 0.486 -78 1700 0.449 -96 0.675 -4.0 0.677 -4 0.468 -82 1800 0.435 -99 0.673 -7.0 0.675 -6 0.448 -85 1900 0.427 -102 0.671 -9.0 0.673 -9 0.431 -89 2000 0.421 -104 0.668 -11 0.670 -11 0.413 -93 2100 0.412 -107 0.663 -14 0.664 -14 0.397 -98 2200 0.407 -110 0.655 -16 0.658 -16 0.380 -103 2300 0.401 -114 0.647 -19 0.648 -19 0.364 -109 2400 0.396 -117 0.634 -21 0.638 -21 0.347 -115 2500 0.396 -121 0.622 -23 0.623 -23 0.335 -122 2600 0.396 -124 0.608 -25 0.609 -26 0.319 -130 2800 0.393 -132 0.569 -29 0.571 -29 0.294 -147 3000 0.397 -142 0.527 -32 0.528 -32 0.276 -167 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13720 2-9 Specifications Table 8. Standby Mode Scattering Parameters (VCC = 2.7 V, EN1 = Low, EN2 = Low) f (MHz) MBC13720 2-10 S21 S11 S12 S22 |S11| |S11| |S11| |S11| 100 0.963 -4 0.010 35 0.010 43 0.951 -3 200 0.953 -7 0.014 61 0.016 61 0.948 -4 300 0.949 -10 0.022 71 0.022 68 0.947 -6 400 0.945 -13 0.029 76 0.029 72 0.945 -8 500 0.943 -16 0.036 75 0.036 74 0.944 -10 600 0.937 -19 0.043 70 0.043 74 0.941 -12 700 0.932 -21 0.050 76 0.049 74 0.938 -15 800 0.926 -24 0.054 74 0.056 74 0.935 -16 900 0.920 -27 0.062 75 0.063 73 0.932 -19 1000 0.914 -30 0.069 72 0.069 73 0.928 -21 1100 0.911 -33 0.075 72 0.075 72 0.923 -23 1200 0.903 -36 0.082 71 0.081 71 0.919 -25 1300 0.897 -38 0.086 72 0.087 70 0.913 -27 1400 0.892 -41 0.094 69 0.092 70 0.908 -29 1500 0.885 -44 0.097 69 0.097 69 0.902 -31 1600 0.877 -47 0.101 68 0.102 69 0.894 -33 1700 0.874 -50 0.104 68 0.106 69 0.887 -35 1800 0.861 -52 0.109 69 0.110 69 0.878 -37 1900 0.855 -55 0.115 69 0.115 69 0.868 -39 2000 0.850 -58 0.120 69 0.118 69 0.857 -42 2100 0.841 -61 0.120 70 0.122 70 0.845 -44 2200 0.831 -64 0.127 71 0.126 71 0.832 -46 2300 0.821 -67 0.132 72 0.132 73 0.816 -49 2400 0.808 -70 0.138 74 0.138 74 0.798 -52 2500 0.797 -73 0.146 75 0.146 76 0.776 -55 2600 0.784 -76 0.155 79 0.156 78 0.751 -58 2800 0.751 -82 0.183 80 0.184 81 0.688 -64 3000 0.720 -89 0.222 82 0.225 81 0.609 -70 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 2 Application Information The MBC13720 SiGe:C LNA is designed for applications in the 400 MHz to 2.4 GHz range. It has four different modes; Low IP3, High IP3, Bypass, and Standby. The IC is programmable through the Enable 1 and 2 pins. In Low IP3 mode, the current consumption is optimized. Current consumption is higher in High IP3 mode to boost the intercept point performance. The gain difference between Low IP3 and High IP3 modes is typically 1.0 dB and typically the Low IP3 mode has a slightly better noise figure performance. The internal bypass switch is designed for broadband applications. One of the advantages of the MBC13720 is the simplification of matching network in both bypass and amplifier modes. The bypass switch is designed such that the changes of input and output return losses between bypass mode and amplifier mode is minimized. As a result, the mismatch at the LNA input and output is minimized and therefore, the matching network design is simplified as well. In the design of the external matching network, conjugate match condition does not necessarily provide the best noise figure performance. Balancing between noise figure, gain, and intercept point is the major design consideration. Typical circuits are provided in Figures 2 and 3 for 1.9 GHz, 2.4 GHz and 900 MHz applications. In Figure 2, it shows the typical application circuit at 1.9 and 2.4 GHz. The noise figure, input intercept point, gain, and return losses are optimized. L2 and C2 act as a low frequency trap to improve the input intercept point. The noise figure measured on this board is 1.4 dB (in Low IP3 mode) at 1.9 GHz, including the external components, connectors, and PC board. The input third order intercept point is 10 dBm (in High IP3 mode). In Figure 3, the typical application circuit at 900 MHz is shown. The input low frequency trap again is used to maximize the input intercept point. It has moderate IP3 performance and high gain. For higher IP3, Figure 4 shows the application circuit with feedback network. Capacitive feedback method is used to reduce the gain and therefore increase the 3rd order input intercept point. The feedback circuit is designed to provide unconditional stability. The corresponding PCBs are shown in Figures 5 through 10. Typical characteristics of the application boards are shown in Table 9. C1 27 pF RF In T1 4 L1 8.2 nH 5 C2 4.7 F 6 EN1 T2 3 Bias Control C3 1.0 pF 2 1 C6 27 pF T3 RF Out L2 2.7 nH R1 330 EN2 C4 4.7 F T1, T2, T3 = 50 Microstrip Line @ 150 mils Figure 2. Typical 1.9 and 2.4 GHz LNA Application Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13720 2-11 Application Information RF In C1 47 pF L1 8.2 nH L2 47 nH C2 4.7 F 4 3 5 2 Bias Control 6 T1 R1 330 C3 3.0 pF T2 RF Out L3 8.2 nH 1 EN1 C4 47 pF EN2 C5 4.7 F Figure 3. Typical 900 MHz LNA Application Schematic C3 0.5 pF RF In C1 150 pF L1 22 nH C2 4.7 F C5 1.0 pF 4 3 5 2 6 EN1 C4 0.5 pF Bias Control R2 10 R1 330 C6 3.0 pF RF Out L2 6.8 nH 1 EN2 C7 4.7 F Figure 4. High IP3 900 MHz LNA Application Schematic MBC13720 2-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 3.048 cm (1.2 in) 2.374 cm (0.9348 in) Figure 5. 1.9/2.4 GHz PCB Figure 6. 1.9/2.4 GHz Assembly Diagram Figure 7. 900 MHz PCB Figure 8. 900 MHz Assembly Diagram MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13720 2-13 Application Information Figure 9. 900 MHz Capactive FeedbackPCB MBC13720 2-14 Figure 10. 900 MHz Capacitive Feedback Assembly Diagram MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information Table 9. Typical Electrical Characteristics of the Application Schematic Mode Symbol High IP3 Low IP3 Bypass Standby Unit Gain G 21 20 -2.9 -22 dB Noise Figure NF 1.3 1.2 2.9 - dB Input Intermodulation Intercept Point IIP3 2.0 -3.0 29 - dBm Output Intermodulation Intercept Point OIP3 23 17 26 - dBm Output 1dB Compression Point P1dB 11.5 10.5 5.0 - dBm Input Return Loss |S11|2 11 10 12 - dB Output Return Loss |S22|2 11 10 15 - dB Reverse Isolation |S12|2 25 24 2.9 22 dB Gain G 16 15 -4.0 -14.5 dB Noise Figure NF 1.4 1.3 4.0 - dB Input Intermodulation Intercept Point IIP3 10 3.5 27 - dBm Output Intermodulation Intercept Point OIP3 26 18.5 23 - dBm Output 1dB Compression Point P1dB 11.5 12 7.0 - dBm Input Return Loss |S11|2 12 11 8.0 - dB Output Return Loss |S22|2 12 12 14 - dB Reverse Isolation |S12|2 22 20 4.0 14.5 dB Gain G 14 13 -2.5 -16 dB Noise Figure NF 1.5 1.4 2.5 - dB Input Intermodulation Intercept Point IIP3 10 4.0 29 - dBm Output Intermodulation Intercept Point OIP3 24.4 17 26.5 - dBm Output 1dB Compression Point P1dB 11.5 11 5.0 - dBm Input Return Loss |S11|2 10 8.0 20 - dB Output Return Loss |S22|2 8.0 7.0 30 - dB Reverse Isolation |S12|2 19 19 2.5 16 dB 900 MHz TYPICAL (See Figure 3) 900 MHz HIGH IP3 (See Figure 4) 1.9 GHz (See Figure 2) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13720 2-15 Application Information Table 9. Typical Electrical Characteristics of the Application Schematic (Continued) Mode Symbol High IP3 Low IP3 Bypass Standby Unit Gain G 12 11 -2.8 -15 dB Noise Figure NF 1.7 1.65 2.8 - dB Input Intermodulation Intercept Point IIP3 13 6.0 25 - dBm Output Intermodulation Intercept Point OIP3 25 17.5 22 - dBm Output 1dB Compression Point P1dB 14 14 5.0 - dBm Input Return Loss |S11|2 12 10 12 - dB Output Return Loss |S22|2 8.0 7.0 14 - dB Reverse Isolation |S12|2 17 17 2.8 15 dB 2.4 GHz (See Figure 2) MBC13720 2-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Technical Data MBC13916/D Rev. 0, mm/2002 MBC13916 General Purpose SiGe:C RF Cascode Amplifier (Scale 2:1) Package Information Plastic Package Case 1404 (SOT-343R) Ordering Information Device Device Marking Package MBC13916T1 916 SOT-343R The MBC13916 is a cost-effective, high isolation amplifier fabricated with Motorola's Advanced RF BiCMOS process using the SiGe:C module. It is intended to be a similar replacement for the MRFIC0916 and is housed in the smaller SOT-343R surface mount package. As with the MRFIC0916, the device is designed for general purpose RF applications, but has improved high frequency gain and noise figure. On-chip bias circuitry sets the bias point, while matching is accomplished off-chip, affording the maximum in application flexibility. * Usable Frequency Range = 100 to 2500 MHz * 19 dB typical gain at 900 MHz, VCC = 2.7 V * NFmin (Device Level) = 0.9 dB @ 900 MHz * NFmin (Device Level) = 1.9 dB @ 1.9 GHz * 2.5 dBm typical Output Power at 1.0 dB Gain Compression at 900 MHz, VCC = 2.7 V * 45 dB Typical Reverse Isolation (Device Level) at 900 MHz, VCC = 2.7 V * 4.7 mA Typ Bias Current at VCC = 2.7 V * 2.7 to 5.0 V Supply * Industry Standard SOT-343R Package * Available Only in Tape and Reel Packaging * Device Weight = 0.00642 g (Typ) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13916 2-17 Gnd 1 3 RF Out RF In 2 4 Gnd (SOT-343R package) Figure 1. Functional Block Diagram Table 1. Maximum Ratings Ratings Symbol Value Unit Supply Voltage VCC 6.0 Vdc RF Input Power PRF 10 dBm Power Dissipation PDIS 100 mW Supply Current ICC 20 mA Thermal Resistance, Junction to Case RJC 400 C/W Storage Temperature Range Tstg -65 to 150 C NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 550 V and Machine Model (MM) 50 V. Additional ESD data available upon request. Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit RF Frequency fRF 100 - 2500 MHz Supply Voltage VCC 2.7 - 5.0 Vdc Unit Table 3. Device Level Characteristics (VCC = 2.7 V, TA = 25C, measured in S-parameter test fixture, unless otherwise noted.) Characteristic Symbol Insertion Gain f = 900 MHz f = 1900 MHz |S21|2 Maximum Stable Gain and/or Minimum Available Gain [Note 1] f = 900 MHz f = 1900 MHz MSG, MAG MBC13916 2-18 Min Typ Max - 16.5 10 - dB dB - 24.5 14.3 - MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 3. Device Level Characteristics (Continued) (VCC = 2.7 V, TA = 25C, measured in S-parameter test fixture, unless otherwise noted.) Characteristic Symbol Minimum Noise Figure [Note 2] f = 900 MHz f = 1900 MHz NFmin Output Third Order Intercept Point [Note 3] f = 900 MHz f = 1900 MHz OIP3 Reverse Isolation f = 900 MHz f = 1900 MHz |S12|2 Min Typ Max - 0.9 1.9 - - 16.5 17 - - -45 -31 - Unit dB dBm dB NOTES: 1. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S S 2 21 21 , if K < 1 MAG = --------- K K - 1 , if K > 1, MSG = ------- S S 12 12 2. Device matched for best noise figure. 3. Zout matched for optimum IP3. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13916 2-19 Table 4. Electrical Characteristics (VCC = 2.7 V, TA = 25C, fRF = 900 MHz, Tested in Circuit Shown in Figure 2, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Small Signal Gain S21 17 19 21 dB Noise Figure NF - 1.25 - dB Power Output at 1.0 dB Gain Compression P1dB 0 2.5 - dBm Output 3rd Order Intercept Point OIP3 - 13 - dBm Reverse Isolation S12 - -42 - dB Supply Current ICC 3.8 4.7 5.6 mA VCC 100 pF 0.01F 8.2 nH 2.0 pF 1 Zc = 50 L = 32 mils RF Out 2.2 pF 6.8 nH 47 pF RF In 3 2 Zc = 50 L = 80 mils 4 Figure 2. 900 MHz Applications Circuit Configuration 3.05 cm (1.2 in) NOTE: PCB material FR4 r = 4.5 h = 25 mils t = 1.75 1.9 cm (0.75 in) Figure 3. 900 MHz Printed Circuit Board MBC13916 2-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 5. Electrical Characteristics (VCC = 2.7 V, TA = 25C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 4, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Small Signal Gain S21 9.5 11.5 13.5 dB Noise Figure NF - 2.1 - dB Power Output at 1.0 dB Gain Compression P1dB - -4.0 - dBm Output 3rd Order Intercept Point OIP3 - 5.5 - dBm Reverse Isolation S12 - -28 - dB Supply Current ICC 3.8 4.7 5.6 mA VCC 0.01 F 100 pF 6.8 nH 5.6 nH 3 2 4 3.3 pF Zc = 50 L = 73 mils RF Out 3.3 nH 3.3 pF RF In 1 Zc = 50 L = 80 mils Figure 4. 1.9 GHz Application Configuration Circuit 3 .0 5 cm (1 .2 in) NOTE: PCB material FR4 r = 4.5 h = 25 mils t = 1.75 1 .9 cm ( 0 .7 5 in) Figure 5. 1.9 GHz Printed Circuit Board MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13916 2-21 40 15 Pout, OUTPUT POWER (dBm) MAXIMUM UNILATERAL GAIN (dB) 35 30 VCC = 5.0 V 25 3.9 V 20 15 10 3.3 V 5.0 0 2.7 V 0 0.5 1.0 1.5 2.0 2.5 3.9 V 2.7 V 5.0 3.3 V 0 -5.0 f = 900 MHz -10 -15 -30 3.0 VCC = 5.0 V 10 -25 Figure 6. GUmax versus Frequency -5.0 0 14 f = 1900 MHz ICC, SUPPLY CURRENT (mA) Pout, OUTPUT POWER (dBm) -10 Figure 7. Output Power versus Input Power 15 VCC = 5.0 V 5.0 3.9 V 0 2.7 V -5.0 3.3 V -10 -15 -20 -30 -15 Pin, INPUT POWER (dBm) f, FREQUENCY (GHz) 10 -20 -25 -20 -15 -10 -5.0 0 Pin, INPUT POWER (dBm) 12 VCC = 5.0 V 10 8.0 6.0 3.9 V 3.3 V 2.7 V 4.0 f = 900 MHz 2.0 0 -30 -25 -20 -15 -10 -5.0 0 Pin, INPUT POWER (dBm) Figure 8. Output Power versus Input Power Figure 9. Supply Current versus Input Power ICC, SUPPLY CURRENT (mA) 16 14 12 VCC = 5.0 V 10 8.0 6.0 3.9 V 3.3 V 2.7 V 4.0 f = 1900 MHz 2.0 0 -30 -25 -20 -15 -10 -5.0 0 Pin, INPUT POWER (dBm) Figure 10. Supply Current versus Input Power MBC13916 2-22 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 6. Scattering Parameters (VCC = 2.7 V, 50 System) f (MHz) S21 S11 S12 S22 |S11| |S21| |S12| |S22| 100 0.829 -11 11.98 165 0.001 17 0.955 -4 200 0.798 -21 11.43 152 0.002 47 0.957 -7 300 0.753 -31 10.69 139 0.002 55 0.956 -11 400 0.701 -39 10.12 128 0.003 56 0.955 -14 500 0.648 -46 9.28 118 0.003 51 0.955 -18 600 0.599 -53 8.66 108 0.004 49 0.954 -22 700 0.554 -58 7.95 98 0.004 41 0.947 -26 800 0.518 -61 7.33 90 0.004 24 0.941 -30 900 0.485 -65 6.83 82 0.004 15 0.933 -34 1000 0.458 -67 6.23 74 0.004 -4 0.926 -38 1100 0.438 -69 5.78 67 0.004 -28 0.915 -43 1200 0.426 -71 5.39 60 0.005 -50 0.902 -46 1300 0.417 -72 4.97 52 0.006 -74 0.893 -51 1400 0.414 -73 4.59 46 0.008 -93 0.879 -54 1500 0.415 -74 4.31 39 0.011 -106 0.868 -58 1600 0.421 -75 3.99 32 0.014 -115 0.851 -62 1700 0.430 -76 3.66 25 0.018 -125 0.835 -66 1800 0.441 -78 3.43 19 0.022 -131 0.818 -70 1900 0.455 -80 3.16 12 0.027 -139 0.803 -73 2000 0.474 -82 2.93 5 0.033 -146 0.777 -77 2100 0.490 -85 2.70 -1 0.039 -152 0.761 -81 2200 0.504 -88 2.48 -8 0.045 -159 0.735 -85 2300 0.524 -92 2.27 -14 0.052 -163 0.707 -89 2400 0.542 -95 2.09 -21 0.059 -169 0.683 -93 2500 0.559 -98 1.90 -28 0.067 -175 0.651 -98 2600 0.572 -103 1.70 -34 0.075 180 0.624 -102 2700 0.587 -106 1.56 -40 0.083 174 0.593 -107 2800 0.603 -110 1.40 -48 0.091 169 0.562 -111 2900 0.610 -114 1.26 -55 0.098 163 0.533 -116 3000 0.613 -118 1.11 -60 0.105 160 0.501 -120 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13916 2-23 Table 7. Scattering Parameters (VCC = 3.0 V, 50 System) f (MHz) S21 S11 S12 S22 |S11| |S21| |S12| |S22| 100 0.812 -11 13.42 165 0.001 11 0.954 -3 200 0.778 -21 12.73 151 0.001 50 0.955 -7 300 0.731 -30 11.82 138 0.002 58 0.956 -11 400 0.677 -38 11.10 127 0.003 50 0.954 -14 500 0.623 -44 10.12 116 0.003 51 0.954 -18 600 0.575 -50 9.37 107 0.003 43 0.952 -22 700 0.533 -54 8.56 98 0.003 30 0.945 -26 800 0.499 -57 7.85 90 0.004 24 0.937 -30 900 0.470 -59 7.29 82 0.004 8 0.930 -34 1000 0.448 -61 6.63 74 0.003 -11 0.923 -38 1100 0.433 -63 6.14 67 0.004 -38 0.911 -42 1200 0.423 -64 5.72 60 0.005 -58 0.900 -46 1300 0.418 -65 5.27 53 0.006 -77 0.891 -50 1400 0.421 -66 4.87 47 0.008 -96 0.878 -54 1500 0.425 -67 4.56 40 0.011 -108 0.868 -58 1600 0.432 -68 4.23 34 0.014 -120 0.852 -61 1700 0.444 -70 3.89 27 0.018 -126 0.838 -65 1800 0.459 -72 3.63 21 0.022 -133 0.822 -69 1900 0.473 -74 3.35 15 0.027 -140 0.809 -73 2000 0.490 -77 3.12 8 0.033 -147 0.784 -77 2100 0.509 -80 2.87 2 0.039 -152 0.769 -80 2200 0.527 -83 2.64 -5 0.045 -159 0.744 -84 2300 0.545 -86 2.42 -11 0.051 -163 0.717 -88 2400 0.560 -90 2.23 -17 0.059 -170 0.694 -92 2500 0.579 -94 2.03 -24 0.067 -175 0.663 -97 2600 0.594 -98 1.82 -30 0.075 -180 0.637 -101 2700 0.606 -101 1.68 -36 0.083 175 0.607 -105 2800 0.620 -105 1.50 -43 0.090 169 0.576 -110 2900 0.630 -110 1.35 -50 0.097 164 0.548 -114 3000 0.636 -113 1.19 -55 0.105 160 0.516 -119 MBC13916 2-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 8. Scattering Parameters (VCC = 3.9 V, 50 System) f (MHz) S21 S11 S12 S22 |S11| |S21| |S12| |S22| 100 0.796 -11 14.82 164 0.001 25 0.954 -3 200 0.760 -20 13.98 150 0.001 50 0.955 -7 300 0.711 -29 12.90 137 0.002 46 0.955 -11 400 0.655 -36 12.03 126 0.002 55 0.955 -14 500 0.602 -42 10.90 115 0.003 50 0.954 -18 600 0.556 -46 10.04 106 0.003 45 0.954 -22 700 0.517 -50 9.12 97 0.003 34 0.947 -26 800 0.487 -52 8.34 89 0.003 22 0.940 -30 900 0.463 -54 7.72 82 0.003 11 0.933 -34 1000 0.444 -56 7.02 74 0.003 -6 0.927 -38 1100 0.432 -57 6.49 67 0.003 -40 0.917 -42 1200 0.428 -58 6.03 61 0.005 -69 0.905 -46 1300 0.427 -59 5.55 53 0.006 -88 0.896 -50 1400 0.430 -60 5.13 48 0.008 -99 0.883 -53 1500 0.437 -61 4.81 41 0.011 -111 0.874 -57 1600 0.449 -62 4.45 35 0.014 -118 0.858 -61 1700 0.462 -64 4.09 29 0.018 -128 0.843 -64 1800 0.475 -66 3.83 23 0.022 -134 0.829 -68 1900 0.493 -69 3.53 17 0.027 -140 0.815 -72 2000 0.512 -72 3.28 10 0.032 -148 0.790 -76 2100 0.529 -75 3.03 4 0.038 -152 0.776 -79 2200 0.544 -78 2.79 -2 0.045 -159 0.752 -83 2300 0.565 -82 2.56 -8 0.051 -164 0.726 -87 2400 0.583 -85 2.37 -14 0.058 -169 0.704 -91 2500 0.599 -89 2.16 -21 0.067 -175 0.674 -96 2600 0.613 -93 1.94 -27 0.075 -179 0.648 -100 2700 0.629 -97 1.79 -32 0.083 175 0.621 -105 2800 0.643 -101 1.60 -39 0.091 170 0.589 -109 2900 0.650 -105 1.44 -46 0.098 164 0.562 -114 3000 0.653 -109 1.28 -51 0.105 160 0.531 -118 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13916 2-25 Table 9. Scattering Parameters (VCC = 5.0 V, 50 System) f (MHz) S21 S11 S12 S22 |S11| |S21| |S12| |S22| 100 0.719 -9 21.47 161 0.001 5 0.939 -3 200 0.678 -17 19.60 145 0.001 18 0.939 -7 300 0.628 -23 17.43 132 0.001 38 0.940 -10 400 0.579 -27 15.66 120 0.002 47 0.937 -14 500 0.540 -30 13.78 110 0.002 38 0.936 -18 600 0.512 -32 12.40 101 0.003 37 0.934 -22 700 0.492 -34 11.05 93 0.002 32 0.927 -26 800 0.480 -34 9.97 86 0.002 9 0.920 -30 900 0.472 -35 9.12 79 0.002 -14 0.914 -34 1000 0.470 -37 8.21 73 0.002 -54 0.908 -38 1100 0.473 -37 7.54 67 0.003 -75 0.899 -42 1200 0.478 -39 6.97 61 0.004 -90 0.890 -46 1300 0.484 -40 6.37 54 0.006 -101 0.884 -50 1400 0.496 -42 5.86 50 0.008 -114 0.875 -54 1500 0.509 -44 5.49 44 0.010 -120 0.871 -57 1600 0.521 -46 5.08 39 0.013 -128 0.858 -60 1700 0.535 -49 4.67 34 0.017 -133 0.848 -63 1800 0.552 -51 4.38 29 0.021 -139 0.838 -67 1900 0.570 -54 4.06 23 0.025 -144 0.829 -70 2000 0.587 -56 3.80 18 0.030 -150 0.807 -73 2100 0.604 -60 3.54 13 0.036 -154 0.795 -76 2200 0.621 -63 3.28 7 0.042 -160 0.772 -79 2300 0.643 -67 3.04 2 0.048 -164 0.746 -83 2400 0.658 -70 2.84 -4 0.056 -169 0.722 -87 2500 0.673 -74 2.61 -10 0.063 -175 0.687 -91 2600 0.690 -78 2.36 -16 0.071 -179 0.657 -96 2700 0.705 -82 2.19 -21 0.079 176 0.623 -101 2800 0.715 -86 1.97 -27 0.088 170 0.588 -107 2900 0.720 -91 1.78 -33 0.094 164 0.556 -113 3000 0.723 -94 1.57 -38 0.101 161 0.523 -119 MBC13916 2-26 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Technical Data Sheet MC13751/D Rev. 1, 10/2002 MC13751 Dual-Band Upmixer and Driver Amplifier Package Information Plastic Package Case 1307 (QFN-24) Ordering Information Device Device Marking Package MC13751FC MC751 QFN-24 The MC13751 is an integrated transmit upmixer and driver amplifier designed for use in cellular phones. It includes two mixers and two RF step attenuators. The device is fabricated using Motorola's Advanced RF BiCMOS process with the SiGe:C option and is housed in a leadless QFN-24 package. * Total Gain: 22 dB for Low Band 19.5 dB for High Band * Total Current Consumption = 53 mA (Typ) * Available in Tape and Reel, 2500 Units per 12 mm, 7 inch Reel MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13751 2-27 High Band High Band Mix Out DRV In High Band IF+ High Band IF- High Band RF Out LO+ LO- Gain Control Low Band IF+ Low Band IF- Low Band RF Out Low Band Low Band Mix Out DRV In Band Select Enable This device contains 223 active transistors. Figure 1. Simplified Block Diagram VCC MixOut DRV In High High Gain High Gnd Band Band Gnd Control Band 24 23 22 21 20 19 IF+ High Band 1 18 Gnd IF- High Band 2 17 RF Out High Band LO+ 3 LO- 16 Enable 4 15 Band Select IF- Low Band 5 IF+ Low Band 14 RF Out Low Band 6 13 Gnd 7 Gnd 8 9 10 VCC MixOut Gnd Low Low Band Band 11 12 Gnd DRV In Low Band Figure 2. Contact Connections Table 1. Maximum Ratings Rating Symbol Value Unit VCC 3.6 V LO Input Power 0 dBm IF Input Level 0 dBm -30 to 85 C Supply Voltage Operating Temperature Range TA NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 250 V and Machine Model (MM) 25 V. Additional ESD data available upon request. MC13751 2-28 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 2. DC Electrical Characteristics Characteristic Symbol Min Typ Max Unit 2.7 2.78 2.86 V - 53 64 mA Enable Inactive State Active State 1.6 - 0.6 - Band 800 MHz Enabled 1900 MHz Enabled 1.6 - 0.6 - - - 25 1.6 - - 0.6 - - 10 A Min Typ Max Unit IF Frequency Low Band High Band 150 150 178 213 250 250 LO Frequency Range Low Band High Band 1002 2028 - 1029 2125 RF Frequency Range Low Band High Band 824 1850 - 849 1910 IF Input Level, Both Bands (differential, typ -7.0 dBm) -60 - 0 dBm LO Input Level, Both Bands (differential) -12 -10 -8.0 dBm RF GMSK Output Level Both Bands Both Bands, Low Gain 10 6.0 - - RF Linear Output Level, TDMA Both Bands Both Bands, Low Gain 6.0 2.0 - - ACP @ f 30 kHz, TDMA @ f 60 kHz, TDMA @ f 200 kHz, GSM @ f 400 kHz, GSM -32 -51 -36 -66 - - Supply Voltage Power Supply Current V V Power Down State Leakage Current (0.2 V Logic Levels) Gain Select Voltage Gain High = 1 Gain Low = 0 A V Gain Select (enable and band signals current) Table 3. Electrical Characteristics Characteristic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol MHz MHz MHz dBm dBm dBc MC13751 2-29 Table 3. Electrical Characteristics (Continued) Characteristic Symbol Min Typ Max Unit Conversion Gain Mixer Low Band High Band 6.3 6.5 8.3 8.5 10.3 10.5 Gain, Driver, High Gain Low Band High Band 11.7 9.0 13.7 11 15.7 13 Gain, Drivers, Low Gain Low Band High Band 7.7 5.0 9.7 7.0 11.7 9.0 Noise Figure Mixer (SSB) Drivers - 11 5.0 14 8.0 IF Impedance (differential) - 200 - W LO Impedance (differential) - 100 - W RF Impedance (Both Bands @ Mixer (rf out, driver rf in and driver rf out)) - 50 - W Min Typ Max Unit LO Leakage to RF Port (Both bands, Pout = 6.0 dBm) - - -20 dBc IF Leakage to RF Port (Both bands) - - -50 dBc Image Supression (Both bands) - - -20 dBc 2x Image Supression (Both bands) - - -40 dBc LO - 2x IF (Both bands) - - -30 dBc 2x LO - 7x IF (Low band) - - -40 dBc 5 * IF (Low band) - - -80 dBc 11 * IF (Low band) - - -80 dBc dBc dBc dBc dB Table 4. Spurious (measured with interstage filter) Characteristic MC13751 2-30 Symbol MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Product Preview Order this document from WBSG Marketing Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter (Scale 2:1) Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package PC13770FC PC70 QFN-12 The MC13770 is a LNA Downconverter designed specifically for WCDMA handsets. The LNA is integrated with a bypass switch to preserve input intercept performance. The device is fabricated using Motorola's Advanced RF BiCMOS process using the SiGe:C option and is packaged in a 12 pin Quad Flat Non-leaded package. * RF Input Frequency: 2110 to 2170 MHz * LNA Gain = 15 dB (Typ) * LNA Input 3rd Order Intercept Point (IIP3) = 0 dBm (Typ) * LNA Noise Figure (NF) = 1.5 dB (Typ) * Bypass Mode Included for Improved Intercept Point Performance * Double Balanced Mixer * Mixer Conversion Gain = 10 dB (Typ) * Mixer Noise Figure (NF) = 8.0 dB (Typ) * Mixer Input 3rd Order Intercept Point (IIP3) = -3.0 dBm (Typ) * Total Supply Current = 8.0 mA LNA = 3.0 mA Mixer = 5.0 mA MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13770 2-31 LNA Out Mix In LO In+ LO In- IF+ IF- LNA In Bypass Enable Mix Bias Figure 1. Simplified Block Diagram Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 3.6 V Storage Temperature Range Tstg -65 to 150 C Operating Temperature Range TA -40 to 85 C NOTE: Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit 2.7 2.75 3.0 Vdc Supply Voltage Logic Voltage (Enable and Bypass Pins) V Input High Voltage 0.85 VCC - VCC Input Low Voltage 0 - 0.15 VCC Min Typ Max Unit - 100 - ns LNA Gain - 15 - dB LNA Noise Figure - 1.5 - dB LNA Input IP3 - 0 - dBm Table 3. Target Specifications Characteristic Symbol Turn-on Time LNA High Gain Mode (VCC = 2.75 V, Bypass = 2.75 V, Enable = 2.75 V) NOTE: MC13770 2-32 Tone spacing for IIP3 measurement is 5.0 MHz. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 3. Target Specifications (Continued) Characteristic Symbol Min Typ Max Unit IDD - 3.0 - mA LNA Gain - -5.0 - dB LNA Noise Figure - 5.0 - dB LNA Input IP3 - 20 - dBm - 10 - A Conversion Gain - 10 - dB SSB Noise Figure - 8.0 - dB Input IP3 - -3.0 - dBm Supply Current - 5.0 - mA LO Drive Level - -10 - dBm LNA Supply Current LNA Low Gain Mode (VCC = 2.75 V, Bypass = 0 V, Enable = 2.75 V) LNA Supply Current IDD Mixer Mode (VCC = 2.75 Vdc, Enable = 2.75 V) NOTE: Tone spacing for IIP3 measurement is 5.0 MHz. Table 4. Truth Table (1 = 2.75 V, 0 = 0 V) Enable Bypass Mode 0 0 Sleep 0 1 Undefined - do not use 1 0 Low Gain 1 1 High Gain Table 5. Pin Function Description Pin Symbol Description 1 LNA Out LNA Output 2 Bypass LNA Bypass Control 3 Mix In Mixer Input 4 Enable Chip Enable 5 LO+ Local Oscillator Input + 6 LO- Local Oscillator Input - MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13770 2-33 Table 5. Pin Function Description (Continued) Pin Symbol Description 7 IF+ Differential IF Output + 8 IF- Differential IF Output - 9 VCC Supply 10 LNA In LNA Input 11 Gnd Ground 12 Mix Bias Mixer Bias Adjustment VCC1 C1 33 pF C12 0.5 pF L2 2.7 nH C9 0.01 F LNA In R1 4.3 k C7 33 pF 12 L1 2.7 nH R2 470 11 10 C2 33 pF 1 LNA Out C8 0.01 F 9 C11 1.0 pF VCC2 L3 * 2 8 R3 * Bypass 3 Mix In L4 * C10 * Mini-Circuits TC8-1 Transformer 8:1 C3 * 7 IF C4 * 4 5 6 C6 33 pF Enable * See Table 6 for values. C5 33 pF LO+ Figure 2. Application Schematic Table 6. Bill of Material for Application Schematic Component 190 MHz IF 380 MHz IF C3 1.2 pF 2.2 pF C4 1.2 pF 2.2 pF C10 1.2 pF 1.2 pF L3 150 nH 39 nH L4 150 nH 39 nH R3 5.0 k 20 k NOTE: MC13770 2-34 All other components are the same for both configurations. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA L N A GND Serial No# VCC1 GAIN I N 1 LNA out IF VCC2 MIX in ENABLE MOTOROLA MC13770EVK GND V2 LO- LO+ Figure 3. Application PCB (Not to Scale) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13770 2-35 Product Preview Order this document from WBSG Marketing Rev. 2, 12/2002 MMM5047 /4-DQPSK/GMSK 800/1900 MHz 3.5 V Power Amplifier Package Information Plastic Package Case 1440 (Module, 9x12mm) Ordering Information Device Device Marking Package MMM5047 Figure 42 Module The MMM5047 is a 3.5 V dual-band, tri-mode (AMPS 800 MHz, /4-DQPSK/GMSK 800/ 1900 MHz) single supply RF power amplifier module for the 800/1900 MHz bands. This is an integrated Power Amplifier with input and output matching. This device is manufactured in advanced InGaP HBT. MMM5047 2-36 * Multi-Mode and Dual-Band 824 to 849 MHz AMPS//4-DQPSK/GMSK 1850 to 1910 MHz /4-DQPSK/GMSK * Single Supply InGaP HBT Technology * Internal Input and Output Matching * Low Leakage Current (<10 A) * High Linearity * Typical 3.5 V Characteristics: AMPS: PAE = 27.6% @ Pout = 28 dBm /4-DQPSK Low Band: PAE = 36.7% ACP1 = -31.7 dBc, ACP2 = -58 dBc @ Pout = 30 dBm GMSK Low Band: PAE = 44.3% @ Pout = 32 dBm /4-DQPSK High Band: PAE = 32.2% ACP1 = -33.4 dBc, ACP2 = -51 dBc @ Pout = 30 dBm GMSK High Band: PAE = 39.8% @ Pout = 32 dBm * SMT Module Package * Small Footprint (9 x 12 mm) * Low Profile (<1.8 mm) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics 800 VCC1 800 VCC2 800 VCC3 800 Vreg 800 Ireg 800RFIN Low Band AMP (824 to 849 MHz) 800RFOUT 1900RFIN High Band AMP (1850 to 1910 MHz) 1900RFOUT 1900 VCC1 1900 VCC2 1900 VCC3 1900 Vreg 1900 Ireg Figure 1. Simplified Block Diagram 1 Electrical Characteristics Table 1. Maximum Ratings Rating Supply Voltage (DC only) Symbol Value Unit 800VCC1,2,3, 1900VCC1,2,3 6.0 V A Leakage Current (800Vreg = 1900Vreg = 800Ireg = 1900Ireg = 0 V) VCC = 3.5 V and TA = 25C VCC = 3.5 V and TA = 85C VCC = 4.5 V and TA = 60C <10 <20 <20 Maximum Input Power (VCC 4.5 V into 50 load) 10 dBm Operating Ambient Temperature Range TA -30 to 85 C Operating Case Temperature Range TC -30 to 90 C Storage Temperature Range Tstg -35 to 100 C 150 C Maximum Die Temperature NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 60 V and Machine Model (MM) 50 V. Additional ESD data available upon request. 3. Meets Moisture Sensitivity Level (MSL) 3. See Figure 42 on page 56 for additional details. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5047 2-37 Electrical Characteristics Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit 800VCC1,2,3, 1900VCC1,2,3 3.0 - 4.5 V Regulated Voltage 800Vreg, 1900Vreg 2.7 - 2.86 V Bias Supply Voltage 800Ireg, 1900Ireg 0 - 2.7 V Bias Supply Current 800Ireg, 1900Ireg 0 - 5.0 mA 800RFIN -40 -40 -30 -35 -30 - 2.0 5.0 7.0 3.0 6.0 Collector Voltage Input Power Low Band AMPS Mode Low Band /4-DQPSK Mode Low Band GMSK Mode High Band /4-DQPSK Mode High Band GMSK Mode dBm 1900RFIN Table 3. Electrical Characteristics (Specifications guaranteed for TA = -30 to 85C, VCC = 3.0 to 4.5 V, with Ireg adjusted for Band and Temperature, unless otherwise noted. Typical values are for TA = 25C, VCC = 3.5 V, Vreg = 2.75 V.) Characteristic Symbol Min Typ Max Unit Input VSWR (Impedance 50 ) Low Band High Band - 1.3:1 1.9:1 2:1 2.8:1 Output VSWR (Impedance 50 ) Low Band High Band - 1.8:1 1.8:1 2.5:1 2.5:1 Load Mismatch Stress: Survival @ Pout = 32 dBm, VCC = 4.5 V - - 10:1 VSWR Stability: Spurious Output Level @ VSWR = 8:1 (output power under 50 load should not exceed 32 dBm) - - -36 dBm 824 - 849 MHz - 0.8 1.2 1.6 - 28 27 - - All Modes Low Band Section (800 MHz) AMPS (100% Duty Cycle) Operating Frequency Recommended Bias Control Current TA = -30C TA = 25C TA = 85C Output Power VCC 3.5 V 3.0 V VCC < 3.5 V MMM5047 2-38 f 800Ireg mA Pout dBm MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics Table 3. Electrical Characteristics (Continued) (Specifications guaranteed for TA = -30 to 85C, VCC = 3.0 to 4.5 V, with Ireg adjusted for Band and Temperature, unless otherwise noted. Typical values are for TA = 25C, VCC = 3.5 V, Vreg = 2.75 V.) Characteristic Symbol Min Typ Max Unit Input Power (adjusted to achieve minimum output power) Pin -40 - 2.0 dBm Gain (minimum output Power) G 25 30.3 36.8 dB 19 16 27.6 - - Power Added Efficiency @ 3.0 V VCC 3.5 V @ VCC > 3.5 V PAE % Intermodulation due to signals at Input (Desired input signal adjusted for minimum Pout @ 849 MHz, Interfering input signal @ 829 MHz adjusted for -40 dBc relative to desired output signal) Pimdout - -60.3 -46 dBc Intermodulation due to signals at Output (Desired input signal adjusted for minimum Pout @ 849 MHz, Interfering signal injected at device output @ 829 MHz, -40 dBc relative to desired output signal) Pimdout - -71.8 -50 dBc Harmonics 2fo 3fo - -33 -69 -27 -59 RX Band Noise Power (30 kHz resolution bandwidth) - -87.6 -78 dBm 824 - 849 MHz - 0.6 0.8 1.2 - 30 28.5 - - dBc /4-DQPSK (33% Duty Cycle, 20 msec period) Operating Frequency Recommended Bias Control Current TA = -30C TA = 25C TA = 85C f 800Ireg mA Output Power VCC 3.5 V 3.0 V VCC < 3.5 V Pout Input Power (adjusted to achieve minimum output power) Pin -40 - 5.0 dBm Gain (minimum output Power) G 24 29.6 36.5 dB 24 21 36.7 - - ACP1 @ 30 kHz @ VCC 3.5 V @ 3.0 V VCC < 3.5 V - -31.7 - -29 -28.5 ACP2 @ 60 kHz - -58 -48 dBc ACP3 @ 90 kHz - - -48 dBc Power Added Efficiency @ 3.0 V VCC 3.5 V @ VCC > 3.5 V MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dBm PAE % dBc MMM5047 2-39 Electrical Characteristics Table 3. Electrical Characteristics (Continued) (Specifications guaranteed for TA = -30 to 85C, VCC = 3.0 to 4.5 V, with Ireg adjusted for Band and Temperature, unless otherwise noted. Typical values are for TA = 25C, VCC = 3.5 V, Vreg = 2.75 V.) Characteristic Symbol Min Typ Max Unit Intermodulation due to signals at Input (Desired input signal adjusted for minimum Pout @ 849 MHz, Interfering input signal @ 829 MHz adjusted for -40 dBc relative to desired output signal) Pimdout - -57.5 -50 dBc Intermodulation due to signals at Output (Desired input signal adjusted for minimum Pout @ 849 MHz, Interfering signal injected at device output @ 829 MHz, -40 dBc relative to desired output signal) Pimdout - -67.5 -50 dBc - -32.4 -67.3 -27 -59 - 2.1 - 4.5 4.0 - -85.7 -76 dBm 824 - 849 MHz - 2.0 2.0 2.0 - 32 30.5 - - Harmonics 2fo 3fo Error Vector Magnitude @ 3.0 V VCC 3.5 V @ VCC > 3.5 V dBc EVM RX Band Noise Power (30 kHz resolution bandwidth) % GMSK (25% Duty Cycle, 4.615 msec period) Operating Frequency Recommended Bias Control Current TA = -30C TA = 25C TA = 85C f 800Ireg mA Output Power VCC 3.5 V 3.0 V VCC < 3.5 V Pout Input Power (adjusted to achieve minimum output power) Pin -30 - 7.0 dBm Gain (minimum output Power) G 24 29.9 37 dB 33 28.5 44.3 - - - 1.1 - 3.0 2.0 Power Added Efficiency @ 3.0 V VCC 3.5 V @ VCC > 3.5 V dBm PAE % /dB AM/PM Conversion @ 3.0 V VCC 3.5 V @ VCC > 3.5 V Intermodulation due to signals at Input (Desired input signal adjusted for minimum Pout @ 849 MHz, Interfering input signal @ 829 MHz adjusted for -40 dBc relative to desired output signal) Pimdout - -50.7 -44 dBc Intermodulation due to signals at Output (Desired input signal adjusted for minimum Pout @ 849 MHz, Interfering signal injected at device output @ 829 MHz, -40 dBc relative to desired output signal) Pimdout - -62.3 -50 dBc MMM5047 2-40 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics Table 3. Electrical Characteristics (Continued) (Specifications guaranteed for TA = -30 to 85C, VCC = 3.0 to 4.5 V, with Ireg adjusted for Band and Temperature, unless otherwise noted. Typical values are for TA = 25C, VCC = 3.5 V, Vreg = 2.75 V.) Characteristic Symbol Min Typ Max Harmonics 2fo 3fo - -33.2 -64.5 -29 -59 RX Band Noise Power (30 kHz resolution bandwidth) - -86.5 -77 Unit dBc dBm dBc Low Band Harmonics @ High Band Output (low band @ minimum output power, high band off) 2fo 3fo (25 and 85C) 3fo (-30C) - -64.1 -66.2 - -60 -60 -58 1850 - 1910 - 1.8 2.0 2.0 - 30 28.5 - - High Band Section (1900 MHz) /4-DQPSK (33% Duty Cycle, 20 msec period) Operating Frequency Recommended Bias Control Current TA = -30C TA = 25C TA = 85C f 1900Ireg MHz mA Output Power VCC 3.5 V 3.0 V VCC < 3.5 V Pout Input Power (adjusted to achieve minimum output power) Pin -35 - 3.0 dBm Gain (minimum output Power) G 26 31.1 36.3 dB - -5.0 -1.4 dBc 22 19 32.2 - - ACP1 @ 30 kHz - -33.4 -29 dBc ACP2 @ 60 kHz - -51 -47 dBc ACP3 @ 90 kHz - - -48 dBc Relative Image Band Gain (Freq = 2275 to 2340 MHz, relative to in-band gain at minimum Pout) Power Added Efficiency @ 3.0 V VCC 3.5 V @ VCC > 3.5 V dBm PAE % Intermodulation due to signals at Input (Desired input signal adjusted for minimum Pout @ 1910 MHz, Interfering input signal @ 1890 MHz adjusted for 40 dBc relative to desired output signal) Pimdout - -69.5 -50 dBc Intermodulation due to signals at Output (Desired input signal adjusted for minimum Pout @ 1910 MHz, Interfering signal injected at device output @ 1890 MHz, -40 dBc relative to desired output signal) Pimdout - -64.5 -50 dBc MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5047 2-41 Electrical Characteristics Table 3. Electrical Characteristics (Continued) (Specifications guaranteed for TA = -30 to 85C, VCC = 3.0 to 4.5 V, with Ireg adjusted for Band and Temperature, unless otherwise noted. Typical values are for TA = 25C, VCC = 3.5 V, Vreg = 2.75 V.) Characteristic Symbol Harmonics 2fo 3fo Error Vector Magnitude @ 3.0 V VCC 3.5 V @ VCC > 3.5 V Min Typ Max Unit - -41.2 -53.7 -34 -46 - 1.6 - 4.5 4.0 - -85.3 -75 dBm 1850 - 1910 MHz - 1.1 2.0 2.0 - 32 30.5 - - dBc EVM RX Band Noise Power (30 kHz resolution bandwidth) % GMSK (25% Duty Cycle, 4.615 msec period) Operating Frequency Recommended Bias Control Current TA = -30C TA = 25C TA = 85C f 1900Ireg mA Output Power VCC 3.5 V 3.0 V VCC < 3.5 V Pout Input Power (adjusted to achieve minimum output power) Pin -30 - 6.0 dBm Gain (minimum output Power) G 25 30.9 36.1 dB - -5.7 -2.0 dBc 28 22 39.8 - - - 1.1 - 2.5 2.0 Relative Image Band Gain (Freq = 2275 to 2340 MHz, relative to in-band gain at minimum Pout) Power Added Efficiency @ 3.0 V VCC 3.5 V @ VCC > 3.5 V dBm PAE % /dB AM/PM Conversion @ 3.0 V VCC 3.5 V @ VCC > 3.5 V Intermodulation due to signals at Input (Desired input signal adjusted for minimum Pout @ 1910 MHz, Interfering input signal @ 1890 MHz adjusted for 40 dBc relative to desired output signal) Pimdout - -54.2 -45 dBc Intermodulation due to signals at Output (Desired input signal adjusted for minimum Pout @ 1910 MHz, Interfering signal injected at device output @ 1890 MHz, -40 dBc relative to desired output signal) Pimdout - -54.9 -48 dBc Harmonics 2fo 3fo - -41.9 -53.1 -35 -44 RX Band Noise Power (30 kHz resolution bandwidth) - -86.2 -77 MMM5047 2-42 dBc dBm MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics Table 3. Electrical Characteristics (Continued) (Specifications guaranteed for TA = -30 to 85C, VCC = 3.0 to 4.5 V, with Ireg adjusted for Band and Temperature, unless otherwise noted. Typical values are for TA = 25C, VCC = 3.5 V, Vreg = 2.75 V.) Characteristic Symbol Min High Band Harmonics @ Low Band Output (high band @ minimum output power, low band off) 2fo 3fo Typ Max Unit dBc - -68.7 -62.3 -63 -53 2 Typical Performance Characteristics 2.1 Low Band (AMPS//4-DQPSK/GMSK Modes) 29.5 31 29 30 -30C 28.5 25C 28 PAE (%) POWER GAIN (dB) 30.5 85C 29 824 25C 27.5 85C 26.5 829 834 839 844 26 824 849 829 834 839 844 849 f, FREQUENCY(MHz) f, FREQUENCY (MHz) Figure 2. Power Gain in AMPS Mode versus Frequency Figure 3. Power Added Efficiency in AMPS Mode versus Frequency -30 -67 -31 -68 -30C -32 25C H3 (dBc) H2 (dBc) -30C 27 VCC = 3.5 V Vreg = 2.75 V 29.5 VCC = 3.5 V Vreg = 2.75 V -33 85C -69 -30C -34 -70 VCC = 3.5 V Vreg = 2.75 V -35 -36 824 829 834 839 844 f, FREQUENCY(MHz) Figure 4. Second Harmonic Output in AMPS Mode versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 849 VCC = 3.5 V Vreg = 2.75 V -71 824 25C 85C 829 834 839 844 849 f, FREQUENCY(MHz) Figure 5. Third Harmonic Output in AMPS Mode versus Frequency MMM5047 2-43 Typical Performance Characteristics 30 39.5 29.8 38.5 29.6 29.4 29.2 29 824 -30C 38 25C 37.5 PAE (%) POWER GAIN (dB) 39 85C 37 25C 36.5 85C 35.5 35 834 839 844 34.5 824 849 829 834 f, FREQUENCY(MHz) ACP2 @ 60 kHz (dBc) ACP1 @ 30 kHz (dBc) -54 85C 25C -32 -30C VCC = 3.5 V Vreg = 2.75 V 829 -56 839 844 25C -60 -64 824 849 -30C -58 -62 834 85C VCC = 3.5 V Vreg = 2.75 V 829 834 f, FREQUENCY(MHz) -31 TA = 85C TA = -30C H2 (dBc) EVM (%) 849 -30 25C -30C VCC = 3.5 V Vreg = 2.75 V 1.5 829 834 839 844 849 Figure 10. Error Vector Magnitude in /4-DQPSK versus Frequency 25C -32 85C -33 -34 f, FREQUENCY(MHz) MMM5047 2-44 844 Figure 9. Adjacent Channel Power in /4-DQPSK Mode versus Frequency 3.0 1.0 824 839 f, FREQUENCY(MHz) Figure 8. Adjacent Channel Power in /4-DQPSK Mode versus Frequency 2.0 849 -52 -31 2.5 844 Figure 7. Power Added Efficiency in /4-DQPSK Mode versus Frequency -30 -34 824 839 f, FREQUENCY(MHz) Figure 6. Power Gain in /4-DQPSK Mode versus Frequency -33 -30C 36 VCC = 3.5 V Vreg = 2.75 V 829 VCC = 3.5 V Vreg = 2.75 V -35 824 VCC = 3.5 V Vreg = 2.75 V 829 834 839 844 849 f, FREQUENCY(MHz) Figure 11. Second Harmonic Output in /4-DQPSK versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics -65 32 VCC = 3.5 V Vreg = 2.75 V 31 POWER GAIN (dB) H3 (dBc) -66 -67 TA = -30C -68 VCC = 3.5 V Vreg = 2.75 V 25C -69 -70 824 85C 829 834 839 844 -30C 30 25C 85C 29 28 824 849 829 f, FREQUENCY(MHz) 839 844 849 f, FREQUENCY(MHz) Figure 12. Third Harmonic Output in /4-DQPSK versus Frequency Figure 13. Power Gain in GMSK Mode versus Frequency -32 VCC = 3.5 V Vreg = 2.75 V 47 H2, SECOND HARMONIC (dBc) 48 -30C 46 PAE (%) 834 25C 45 85C 44 43 42 824 829 834 839 844 849 -33 -30C 25C -34 -35 824 85C VCC = 3.5 V Vreg = 2.75 V 829 834 839 844 849 f, FREQUENCY(MHz) f, FREQUENCY(MHz) Figure 14. Power Added Efficiency in GMSK Mode versus Frequency Figure 15. Second Harmonic Output in GMSK Mode versus Frequency -63 -64 LOW BAND SECOND HARMONIC @ UPPER BAND OUTPUT (dBc) -62 H3 (dBc) -30C 25C -66 85C -68 824 829 VCC = 3.5 V Vreg = 2.75 V 834 839 844 f, FREQUENCY(MHz) Figure 16. Third Harmonic Output in GMSK Mode versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 849 -64 85C 25C -65 -30C -66 824 829 VCC = 3.5 V Vreg = 2.75 V 834 839 844 849 f, FREQUENCY(MHz) Figure 17. Low Band Second Harmonic at Upper Band Ouput in GMSK Mode versus Frequency MMM5047 2-45 Typical Performance Characteristics 2.0 -65 85C VCC = 3.5 V Vreg = 2.75 V -63 AM/PM (/dB) LOW BAND H3 HARMONIC @ UPPER BAND OUTPUT (dBc) -61 -30C 25C -67 -69 824 85C 1.5 25C 1.0 -30C VCC = 3.5 V Vreg = 2.75 V 829 834 839 844 0.5 824 849 829 834 839 844 849 f, FREQUENCY(MHz) f, FREQUENCY(MHz) Figure 19. AM/PM in GMSK Mode versus Frequency Figure 18. Low Band Third Harmonic at High Band Ouput in GMSK Mode versus Frequency 2.2 High Band (/4-DQPSK/GMSK Modes) 33 34 VCC = 3.5 V Vreg = 2.75 V -30C 31 25C 30 85C 33 -30C PAE (%) POWER GAIN (dB) 32 VCC = 3.5 V Vreg = 2.75 V 32 25C 85C 29 1850 1860 1870 1880 1890 1900 f, FREQUENCY(MHz) Figure 20. Power Gain in /4-DQPSK Mode versus Frequency MMM5047 2-46 1910 31 1850 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) Figure 21. Power Added Efficiency in /4-DQPSK Mode versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics -32 -49 85C -33 -50 ACP2 @ 60 kHz (dBc) ACP1 @ 30 kHz (dBc) 85C 25C -34 -30C VCC = 3.5 V Vreg = 2.75 V -35 1850 1860 1870 1880 1890 1900 -52 -30C VCC = 3.5 V Vreg = 2.75 V -53 -54 1850 1910 25C -51 1860 1880 1890 1900 1910 f, FREQUENCY(MHz) f, FREQUENCY(MHz) Figure 22. Adjacent Channel Power in /4-DQPSK Mode versus Frequency Figure 23. Adjacent Channel Power in /4-DQPSK Mode versus Frequency -39 3.0 2.5 -40 85C 2.0 25C H2 (dBc) EVM (%) 1870 1.5 -30C 1.0 -41 85C -42 25C VCC = 3.5 V Vreg = 2.75 V 0.5 0 1850 1860 -30C VCC = 3.5 V Vreg = 2.75 V -43 1870 1880 1890 1900 -44 1850 1910 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) f, FREQUENCY(MHz) Figure 24. Error Vector Magnitude versus in /4-DQPSK ModeFrequency Figure 25. Second Harmonic Output in /4-DQPSK Mode versus Frequency -52 VCC = 3.5 V Vreg = 2.75 V 85C -53 RELATIVE IMAGE BAND GAIN (dBc) -52 H3 (dBc) -30C -54 25C -55 1850 1860 1870 1880 1890 1900 f, FREQUENCY(MHz) Figure 26. Third Harmonic Output in /4-DQPSK Mode versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 1910 85C -53 -54 -30C -30C 25C VCC = 3.5 V Vreg = 2.75 V -55 1850 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) Figure 27. Relative Image Band Gain in /4-DQPSK Mode versus Frequency MMM5047 2-47 Typical Performance Characteristics 42 33 VCC = 3.5 V Vreg = 2.75 V POWER GAIN (dB) 32 41.5 VCC = 3.5 V Vreg = 2.75 V 41 PAE (%) -30C 31 -30C 40.5 25C 40 25C 39.5 85C 39 30 38.5 85C 29 1850 1860 1870 1880 1890 1900 38 1850 1910 1860 1870 1880 1890 Figure 28. Power Gain in GMSK Mode versus Frequency Figure 29. Power Added Efficiency in GMSK Mode versus Frequency -40 -51 -30C -52 85C H3 (dBc) H2 (dBc) VCC = 3.5 V Vreg = 2.75 V 25C -41 -42 1860 1870 1890 1880 1900 85C -53 VCC = 3.5 V Vreg = 2.75 V -43 -30C 25C 1910 -54 1850 1860 1870 f, FREQUENCY(MHz) VCC = 3.5 V Vreg = 2.75 V UPPER BAND H3 @ LOW BAND OUTPUT (dB) UPPER BAND H2 @ LOW BAND OUTPUT (dB) 1900 1910 -59 -30C -68 85C 25C -69 -70 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) Figure 32. Upper Band Second Harmonic at Low Band Ouput in GMSK Mode versus Frequency MMM5047 2-48 1890 Figure 31. Third Harmonic Output in GMSK Mode versus Frequency -66 -71 1850 1880 f, FREQUENCY(MHz) Figure 30. Second Harmonic Output in GMSK Mode versus Frequency -67 1910 f, FREQUENCY(MHz) f, FREQUENCY(MHz) -44 1850 1900 -60 -61 -30C -62 85C -63 25C -64 VCC = 3.5 V Vreg = 2.75 V -65 -66 1850 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) Figure 33. Upper Band Third Harmonic at Low Band Ouput in GMSK Mode versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics -5.0 AM/PM (%/dB) 1.25 RELATIVE IMAGE BAND GAIN (dBc) 1.5 85C 25C 1.0 0.75 0.5 1850 -30C VCC = 3.5 V Vreg = 2.75 V 1860 1880 1870 1890 1900 VCC = 3.5 V Vreg = 2.75 V 25C 85C -6.0 -6.5 1850 1910 -30C -5.5 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) f, FREQUENCY(MHz) Figure 34. AM/PM in GMSK Mode versus Frequency Figure 35. Relative Image Band Gain in GMSK Mode versus Frequency 2.3 All Modes -9.0 -16 TA = 85C 25C -10 -18 25C -19 VCC = 3.5 V Vreg = 2.75 V -20 829 -30C -11 -30C -21 824 85C IRL (dB) IRL (dB) -17 834 839 844 f, FREQUENCY(MHz) Figure 36. Input Return Loss in Low Band versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA VCC = 3.5 V Vreg = 2.75 V 849 -12 1850 1860 1870 1880 1890 1900 1910 f, FREQUENCY(MHz) Figure 37. Input Return Loss in High Band versus Frequency MMM5047 2-49 Contact Connections 3 Contact Connections Table 4. Contact Function Description Contact Symbol Description 1 1900 RFIN 1900 MHz RF input 2 GND Ground 3 1900 vreg 1900 MHz regulated DC voltage supply for 1st and 2nd stages bias circuits 4 1900 VCC2 1900 MHz DC voltage supply for 2nd stage 5 1900 Ireg 1900 MHz bias adjust current supply for 3rd stage 6 GND Ground 7 N.C. Not connected 8 1900 VCC3 1900 MHz DC voltage supply for 3rd stage 9 N.C. Not connected 10 1900 RFOUT 1900 MHz RF output 11 800 RFOUT 800 MHz RF output 12 N.C. Not connected 13 800 VCC3 800 MHz DC voltage supply for 3rd stage 14 N.C. Not connected 15 N.C. Not connected 16 800 Ireg 800 MHz bias adjust current supply for 3rd stage 17 800 VCC2 800 MHz DC voltage supply for 2nd stage 18 800 VCC1 800 MHz DC voltage supply for 1st stage 19 800 RFIN 800 MHz RF input 20 GND Ground 21 800 Vreg 800 MHz regulated DC voltage supply for 1st and 2nd stages bias circuits 22 N.C. Not connected 23 1900 VCC1 1900 MHz DC voltage supply for 1st stage MMM5047 2-50 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Contact Connections 800RFIN 19 GND 20 800 VCC1 800 VCC2 800 Ireg N.C. N.C. 800 VCC3 18 17 16 15 14 13 12 N.C. 11 800RFOUT 10 1900RFOUT 9 N.C. Low Band Ground Contact 800Vreg 21 N.C. 22 1900VCC1 23 1900RFIN 1 High Band Ground Contact 2 3 4 5 6 7 8 GND 1900 Vreg 1900 VCC2 1900 Ireg GND N.C. 1900 VCC3 (Top View, Not to Scale) Figure 38. Contact Connections MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5047 2-51 Application Information 4 Application Information MMM5047 J1, J6 C1, C2 C3 C4, C12 C5, C6, C7, C8, C9, C10, C11, C13 C14 C15 C16, C18 C17 C19 L1 L2 L3 R1, R2, R5, R6 R3, R4, R7, D1 DC connector HE10 DIL10 10 nF 220 F, 16 V SMD Aluminum Electrolytic 1.0 nF Not mounted 100 nF 6.8 nF 220 F, 10 V SMD Tantalum 0.5 pF 220 pF Not mounted Ferrite (Fair-rite Products, P/N 2512067007Y3) 270 nH Coilcraft 0 Not mounted Figure 39. Application Schematic MMM5047 2-52 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information NOTES:ALL VIA HOLES .015 DIA (0,38 mm DIAM) MATERIAL FR4 [ NELCO] COPPER THICKNESS 35 um TOTAL THICKNESS .063 (1,6 mm) STACKING INFOS. TOP INNER 2 FR4 DIELEC t = .018 (0,46mm) FR4 DIELEC t = .020 (0,50mm) INNER 3 FR4 DIELEC t = .018 (0,46mm) BOTTOM Figure 40. Application PCB MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5047 2-53 Application Information Table 5. Recommended Ireg versus Mode and Temperature Low Band (824 to 849 MHz) Temperature High Band (1850 to 1910 MHz) AMPS (mA) /4-DQPSK (mA) GMSK (mA) /4-DQPSK (mA) GMSK (mA) -30C 0.8 0.6 2.0 1.8 1.1 25C 1.2 0.8 2.0 2.0 2.0 85C 1.6 1.2 2.0 2.0 2.0 Time within 5C of Peak 10-20 sec Target peak temperature (e.g. 240C) (with machine tolerance 5C) Ramp Rate 217C to 240C 2C / sec minimum Temperature (C) 180C 165C 180 sec. Min Time above 165C Ramp rate - 6C/sec maximum Ramp rate 2C/sec minimum measured from 50C to 150C 25C Sketch not to scale Time (s) Figure 41. Solder Reflow Diagram MMM5047 2-54 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Packaging Information 5 Packaging Information Shipping, Packaging and Marking Information Tape Width: 24.0 mm Tape Pitch 12 mm (part to part) Reel Diameter: 330 mm (13 in) Component Orientation: Parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. XXXXXXX Dry Pack: This device meets Moisture Sensitiviy Level (MSL) 3. Parts will be shipped in Dry Pack. Parts must be stored at 30C and 60% relative humidity with time out of dry pack not to exceed 168 hours. xxxxx(yy)/xxxxx(yy) xxxxxxxxxx YYWW In the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 1) 40C Dry Out: Bake devices at 40C TA 45C, 5% Relative Humidity for at least 192 hours. 2) Room Temperature Dry Out: Store devices at less than 20% Relative Humidity for at least 500 hours. Tape & Reel Orientation (Top View) Marking (Top View) Marking: 1st line: Motorola Logo 2nd Line: 7-digit Alphanumeric Part Number (MMM5047) 3rd Line: 5-digit X1 LOT ID (2-digit WAFER ID)/5-digit X4 LOT ID (2-digit WAFER ID) 4th Line: ASSEMBLY LOT # XXXXXXXXXX (10-digit Max.) 5th Line: DATE CODE - YYWW Figure 42. Shipping, Packing, and Marking Information MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5047 2-55 Technical Data MMM5062/D Rev. 3, 9/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier (Scale 1:1) Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/ DCS1800/PCS1900 GPRS handheld radios. This fully integrated Power Amplifier uses a patented concept to realize the 50 matching on-chip through integration of passives on the GaAs die. This allows module functionality in a very small 7 x 7 mm package and achieves best-in-class Power Amplifier performance and multi-band capability. Applications: * Quad-Band GSM850/900 DCS1800 and PCS1900 * Guaranteed for Class 10 GPRS Features: * Single Supply Enhancement Mode GaAs MESFET Technology * Internal 50 Input/Output Matching * High Gain Three Stage Amplifier Design * Typical 3.5 V Characteristics: Pout = 35.5 dBm, PAE = 50% for GSM850 Pout = 35.2 dBm, PAE = 53% for GSM900 Pout = 33.8 dBm, PAE = 44% for DCS Pout = 34 dBm, PAE = 43% for PCS MMM5062 2-56 * Optimized and Guaranteed for Open-Loop Power Control Applications * Small 7 x 7 mm Package MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications VDCS1 VDCS3 VDCS2 DCS/PCS In Vreg Vapc DCS/PCS AMP GSM In DCS/PCS Out GSM Out GSM AMP VGSM1 VGSM2 VGSM3 VBS VdB This device contains 26 active transistors. Figure 1. Simplified Block Diagram 1 Electrical Specifications Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VGSM1,2,3, VDCS1,2,3, VdB 6.0 V RF Input Power GSM IN, DCS/PCS IN 10 dBm GSM OUT DCS/PCS OUT 38 36 Operating Case Temperature Range TC -35 to 100 C Storage Temperature Range Tstg -55 to 150 C TJ 150 C RF Output Power GSM Section DCS/PCS Section Die Temperature dBm NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 150 V and Machine Model (MM) 50 V. Additional ESD data available upon request. 3. Meets Moisture Sensitivity Level (MSL) 3. See Figure 30 on page 75 for additional details. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5062 2-57 Electrical Specifications Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Supply Voltage VGSM1,2,3, VDCS1,2,3 2.7 - 5.5 V Bias Supply Voltage VdB 2.7 - 5.5 V Regulated Voltage VREG 2.5 2.8 3.0 V Power Control Voltage Vapc 0 1.8 2.8 V Band Select VBS 0 2.8 3.0 V GSM IN -1.0 - 8.0 dBm DCS/PCS IN 2.0 - 10 dBm Input Power GSM850/900 Input Power DCS/PCS Table 3. Control Requirements Characteristic Symbol Min Typ Max Unit Current for Vreg @ 2.8 V Ireg - 7.7 10 mA Band Select Low Band Enable Voltage High Band Enable Voltage VBS 2.2 0 2.8 - 0.3 Current for VBS = 2.8 V IBS - 0.76 1.0 mA Max Unit V Table 4. Electrical Characteristics (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ GSM 850 Section(Pin = -1.0 dBm, VGSM1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = VBS= 2.8 V, Vramp = 1.8 V pulsed) Frequency Range BW 824 - 849 MHz Output Power Pout 34.5 35.5 - dBm Power Added Efficiency PAE 42 50 - % Output Power @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 33 33.8 - dBm Power Added Efficiency @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 43 51 - % Harmonic Output 2fo 3fo - -35 -60 -30 -45 Second Harmonic Leakage at DCS Output - -25 -15 MMM5062 2-58 dBc dBm MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Input Return Loss |S11| - 13 - dB Output Power Isolation (Vramp = 0 V, VGSM1,2,3 = 0 V) Poff - -45 -40 dBm Noise Power in Rx Band @ Pin = -1.0 dBm (100 kHz measurement bandwidth) @ fo + 20 MHz fo = 849 MHz NP - -83 - dBm Noise Power in Rx Band @ Pin = 6.0 dBm (100 kHz measurement bandwidth) @ fo + 20 MHz fo = 849 MHz NP - -86 -82 dBm Pspur - - -60 dBc Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) No Degradation in Output Power Before and After Test GSM 900 Section(Pin = -1.0 dBm, VGSM1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = VBS= 2.8 V, Vramp = 1.8 V pulsed) Frequency Range BW 880 - 915 MHz Output Power Pout 34.2 35.2 - dBm Power Added Efficiency PAE 48 53 - % Output Power @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) Pout 32.5 33.4 - dBm Power Added Efficiency @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) PAE 48 54 - % - -37 -60 -33 -45 - -28 -15 dBm Harmonic Output 2fo 3fo dBc Second Harmonic Leakage at DCS Output (Crosstalk isolation) Input Return Loss |S11| - 10 - dB Output Power Isolation (Vramp = 0 V, VGSM1,2,3 = 0 V) Poff - -45 -40 dBm Noise Power in Rx Band @ Pin = -1.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) NP Noise Power in Rx Band @ Pin = 6.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) NP MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dBm - -80 -81 dBm - -84 -86 -77 -81 MMM5062 2-59 Electrical Specifications Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Symbol Min Typ Max Unit Pspur - - -60 dBc Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) No Degradation in Output Power Before and After Test DCS Section(Pin = 2.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range BW 1710 - 1785 MHz Output Power Pout 32.5 33.8 - dBm Power Added Efficiency PAE 38 44 - % Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 31 32 - dBm Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 38 45 - % - -65 -50 -45 -45 Harmonic Output 2fo 3fo dBc Input Return Loss |S11| - 9.0 - dB Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Poff - -40 -35 dBm Noise Power in Rx Band @ Pin = 2.0 dBm @ fo + 20 MHz (fo = 1785 MHz) (100 kHz measurement bandwidth) NP - -78 -75 dBm Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Pspur - - -60 dBc Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) No Degradation in Output Power Before and After Test PCS Section(Pin = 3.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range BW 1850 - 1910 MHz Output Power Pout 32.5 34 - dBm Power Added Efficiency PAE 37 43 - % Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 31 32 - dBm Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 37 43 - % MMM5062 2-60 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Harmonic Output 2fo 3fo Min Typ Max - -65 -50 -45 -45 Unit dBc Input Return Loss |S11| - 5.0 - dB Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Poff - -35 -32 dBm Noise Power in Rx Band @ Pin = 3.0 dBm @ fo + 20 MHz (fo = 1910 MHz) (100 kHz measurement bandwidth) NP - -78 -75 dBm Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Pspur - - -60 dBc Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation in Output Power Before and After Test MMM5062 2-61 Typical Performance Characteristics 2 Typical Performance Characteristics 2.1 GSM850 56 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 38 37 36 TA = -35C 35 25C 85C 34 VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 33 32 824 829 834 839 844 54 TA = -35C 52 50 25C 48 46 Vapc = 2.2 V 44 824 849 829 f, FREQUENCY (MHz) 834 839 844 849 f, FREQUENCY (MHz) Figure 2. Output Power versus Frequency Figure 3. Power Added Efficiency versus Frequency -10 38 H2, SECOND HARMONIC (dBc) VGSM1,2,3 = 3.5 V -15 CROSSTALK (dBm) VGSM1,2,3 = 3.5 V VdB = 3.5 V 85C VdB = 3.5 V Vapc = 2.2 V -20 TA = -35C -25 25C -30 85C -35 824 829 834 839 844 37 TA = 85C VdB = 3.5 V Vapc = 2.2 V 35 34 25C 33 -35C 32 824 849 VGSM1,2,3 = 3.5 V 36 829 f, FREQUENCY (MHz) 834 839 844 849 f, FREQUENCY (MHz) Figure 4. Crosstalk versus Frequency Figure 5. Second Harmonic Output versus Frequency H3, THIRD HARMONIC (dBc) 67 TA = 25C 66 65 64 63 -35C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 62 61 824 85C 829 834 839 844 849 f, FREQUENCY (MHz) Figure 6. Third Harmonic Outputversus Frequency MMM5062 2-62 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics 2.2 GSM900 60 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 38 37 36 TA = -35C 35 25C 34 85C VGSM1,2,3 = 3.5 V VdB = 3.5 V 33 Vapc = 2.2 V 32 880 887 894 901 908 TA = -35C 55 25C 50 85C VGSM1,2,3 = 3.5 V 45 VdB = 3.5 V Vapc = 2.2 V 40 880 915 887 901 908 915 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency Figure 8. Power Added Efficiency versus Frequency -20 38 H2, SECOND HARMONIC (dBc) VGSM1,2,3 = 3.5 V -22 CROSSTALK (dBm) 894 VdB = 3.5 V -24 Vapc = 2.2 V -26 -28 TA = 85C -35C -30 -32 25C -34 880 887 894 901 908 37 TA = 85C 36 25C VdB = 3.5 V Vapc = 2.2 V 35 34 -35C 33 32 880 915 VGSM1,2,3 = 3.5 V 887 f, FREQUENCY (MHz) 894 901 908 915 f, FREQUENCY (MHz) Figure 9. Crosstalk versus Frequency Figure 10. Second Harmonic Output versus Frequency H3, THIRD HARMONIC (dBc) 70 69 TA = -35C 68 67 VGSM1,2,3 = 3.5 V 66 Vapc = 2.2 V 25C VdB = 3.5 V 65 64 63 880 85C 887 894 901 908 915 f, FREQUENCY (MHz) Figure 11. Third Harmonic Output versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5062 2-63 Typical Performance Characteristics 2.3 DCS 48 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 34.4 TA = -35C 34.2 34 33.8 25C VGSM1,2,3 = 3.5 V 33.6 VdB = 3.5 V 33.4 Vapc = 2.2 V 33.2 85C 33 1710 1735 1760 47 TA = -35C 46 45 25C 44 VGSM1,2,3 = 3.5 V 43 VdB = 3.5 V Vapc = 2.2 V 42 85C 41 40 1710 1785 1735 f, FREQUENCY (MHz) 60 71 59 H3, THIRD HARMONIC (dBc) H2, SECOND HARMONIC (dBc) Figure 13. Power Added Efficiency versus Frequency 72 70 69 68 67 25C 66 65 1710 VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 35C 1735 1760 f, FREQUENCY (MHz) Figure 14. Second Harmonic Output versus Frequency MMM5062 2-64 1785 f, FREQUENCY (MHz) Figure 12. Output Power versus Frequency TA = 85C 1760 1785 58 VGSM1,2,3 = 3.5 V VdB = 3.5 V TA = -35C Vapc = 2.2 V 25C 57 85C 56 55 54 1710 1735 1760 1785 f, FREQUENCY (MHz) Figure 15. Third Harmonic Output versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics 2.4 PCS 46 Pout, OUTPUT POWER (dBm) 34.6 PAE, POWER ADDED EFFICIENCY (%) 34.8 TA = -35C 34.4 34.2 25C 34 VGSM1,2,3 = 3.5 V 33.8 VdB = 3.5 V 33.6 Vapc = 2.2 V 33.4 85C 33.2 33 1850 1880 1865 1895 TA = -35C 44 25C 42 40 85C VGSM1,2,3 = 3.5 V 38 VdB = 3.5 V Vapc = 2.2 V 36 1850 1910 1865 f, FREQUENCY (MHz) Figure 16. Output Power versus Frequency 1895 1910 Figure 17. Power Added Efficiency versus Frequency 70 59 TA = 85C 58 69 68 H3, THIRD HARMONIC (dBc) H2, SECOND HARMONIC (dBc) 1880 f, FREQUENCY (MHz) 25C -35C 67 66 VGSM1,2,3 = 3.5 V 65 VdB = 3.5 V Vapc = 2.2 V 64 1850 1865 1880 1895 f, FREQUENCY (MHz) Figure 18. Second Harmonic Output versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 57 56 54 25C 53 52 51 50 1910 TA = -35C 55 49 1850 VGSM1,2,3 = 3.5 V VdB = 3.5 V 85C Vapc = 2.2 V 1865 1880 1895 1910 f, FREQUENCY (MHz) Figure 19. Third Harmonic Output versus Frequency MMM5062 2-65 Pin Descriptions and Connections 3 Pin Descriptions and Connections Table 5. Pin Function Description Pin Symbol Description 1 Vreg Regulated dc voltage for bias circuit 2 VdB DC supply voltage for active bias circuits connected to the battery 3 DCS/PCS Out DCS/PCS RF output 4 VDCS3 DCS/PCS DC supply voltage for 3rd stage 5 VDCS2 DCS/PCS DC supply voltage for 2nd stage 6 VDCS1 DCS/PCS DC supply voltage for 1st stage 7 Vapc Power control for both line-ups (Vapc = 0 V, Pout = Poff, Vapc = 1.8 V, Pout = Pmax) 8 DCS/PCS In DCS/PCS RF input 9 GSM In GSM850/GSM900 RF input 10 VGSM1 GSM850/GSM900 DC supply voltage for 1st stage 11 VGSM2 GSM850/GSM900 DC supply voltage for 2nd stage 12 VGSM3 GSM850/GSM900 DC supply voltage for 3rd stage 13 GSM Out GSM850/GSM900 RF output 14 VBS Band selection between GSM850/GSM900 and DCS/PCS Pin 1 Pad Corner Vreg VdB DCS/PCS Out VBS VDCS3 VDCS2 VDCS1 GSM Out Ground Plane (0.60) Vramp DCS/PCS In VGSM3 VGSM2 VGSM1 GSM In (0.95) NOTE: For optimum performance VGSM1 and VGSM2, as well as VDCS1 and VDCS2, must be strapped together on the application demobard. Figure 20. Pin Connections (Bottom View) MMM5062 2-66 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 4 Application Information 4.1 Power Control Considerations The MMM5062 is designed for open loop (drain control) applications. A PMOS FET is used to switch the MMM5062 drain and vary the supply voltage from 0 to the battery voltage setting (Vbat). The simplified concept schematic (see Figure 27) describes the application circuit used to control the device through the drain voltage. A drain control provides a linear transfer function which is repeatable versus control voltage (see Figure 21). 4.0 Pout, OUTPUT POWER (W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 6.0 8.0 10 12 14 VD2, DRAIN VOLTAGE SQUARED (V2) Figure 21. Output Power versus Drain Voltage 4.2 GSM Second Harmonic (H2) Trap Circuitry When transmitting in GSM saturated mode, the second harmonic is naturally present at the RF output of the PA and reaches the antenna after additional filtering in the front-end. ETSI specifies that harmonic level cannot exceed -36 dBm. In order to improve H2 rejection in low Band (GSM850/GSM900), an H2 trap has been developed. The topology is based on a Low Pass Cell Filter (see Figure 22) where the first shunt capacitor is actually part of the PA output match. GSM Out 8.2 pF 0402 Murata 460 nH 7.5 nH Coilcraft 0603 Switchplexer 2.2 pF 0402 Murata 460 nH Figure 22. Low Pass Filter This circuit reduces H2 level by 7 to 8 dB with low in-band insertion losses (mainly due to the series inductor). Moreover, this structure can be used to match Power amplifier module output to the switchplexer. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5062 2-67 Application Information 4.3 Application Schematics and Printed Circuit Boards Battery PMOS [Note 1] Vramp CE Vreg VAPC VBS GSM In DCS/PCS In Vd VdB MMM5062 GSM Out DCS/PCS Out [Note 2] NOTES: 1. Op/Amp is either external (with an enable pin CE) or in an ASIC. 2. The MMM5062 requires 4 to 6 RF/LF decoupling capacitors (not shown). Figure 23. Open Loop Control Application Schematic Figure 23 represents the complete Power Amplifier implementation including the MMM5062 Amplifier Module and the Control Circuitry. This functionality is realized with two separate printed circuit boards; the PA Evaluation Circuit with schematic shown in Figure 26 and PCB Layout shown in Figure 28, and the Power Amplifier Control Loop with schematic shown in Figure 27 and PCB Layout shown in Figure 29. The PA Evaluation Circuit is straightfoward and, due to the MMM5062's high level of integration, requires only a few passive components around the package. These components are mainly de-coupling capacitors. The Power Amplifier Control Loop is based on an operational amplifier driving a PMOS transistor. The PMOS device functions as a linear drain voltage regulator controlled by Vrampwith a typical gain of 2 which is set through the resistive divider R4 and R5 as shown in Figure 27. To control output power through the drain, Vapc must be indexed to the drain voltage to prevent the PA Section from drawing excessive current especially at low output power. Nevertheless, Vapc should stay above 0.8 V to provide sufficient gain for the line-up. Figure 24 describes the application circuit used to control Vapc through the drain voltage. It uses Vreg to pre-position Vapc at 0.9 V and add a voltage which is dependent on the drain Voltage. Vreg = 2.8 V R8 = 1.0 k 0 V < Vdrain < VBAT R7 = 560 Vapc RVAPC = 700 Internal to the die Figure 24. MMM5062 2-68 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information R8 and RVapc set Vapc at 0.9 V while R7 sets the Vapc slope. Vapc versus Vdrain is shown in the Figure 25. 2.4 2.2 2.0 Vapc (V) 1.8 1.6 1.4 1.2 1.0 0.8 0 0.5 1.0 1.5 2.0 Vdrain (V) 2.5 3.0 3.5 4.0 Figure 25. Vapc versus Vdrain It is possible that the Power Control DAC output voltage can be in the 200 mV to 2.0 V range. This raises a concern for the MMM5062 ramp control voltage (Vramp) which must start at 0 V to get enough output power dynamic range. To overcome this limitation, a resistor (R6 in Figure 27) is used to set an additional offset (200 mV with R6 = 39 k). This residual voltage is then subtracted the DAC output voltage through the differential Operational Amplifier. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5062 2-69 Application Information C9 10 nF C1 N/C C2 330 pF C6 N/C C11 1.0 nF C13 N/C C15 10 nF VDCS2 C8 22 pF VDCS3 VDCS1 DCS/ PCS In Vapc DCS/PCS In GSM In C7 22 pF DCS/PCS Out C4 N/C VGSM1 C5 220 pF Vreg C12 22 pF C14 10 nF C17 3.9 pF VBS GSM In C18 100 pF VGSM3 C16 6.8 pF VGSM2 GSM Out C3 N/C VdB DCS/PCS Out C10 47 pF NOTE: N/C = No Connect, Do not mount. GSM Out Figure 26. PA Evaluation Circuit MMM5062 2-70 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information C6 47 nF C5 10 nF NOTE: N/C = No Connect, Do not mount. C1 68 F R8 1.0 k R10 N/C R3 12 k R7 560 C3 15 pF R2 150 C2 330 pF C4 330 pF C18 10 nF R6 39 k R5 5.6 k R4 5.6 k R11 150 C12 10 nF Figure 27. Power Amplifier Control Loop MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5062 2-71 Application Information Figure 28. PA Evaluation Circuit PCB Table 6. PA Evaluation Circuit PCB Bill of Materials Reference Value Part Number Manufacturer C1, C3, C4, C6, C13 N/C - Do not mount C2 330 pF GRM36COG330J50 Murata C5 220 pF GRM36X7R221K50 Murata C7, C8, C12 22 pF GRM36COG220J50 Murata C9, C14, C15 10 nF GRM36X7R103K25 Murata C10 47 pF GRM36COG470J50 Murata C11 1.0 nF GRM36X7R102K25 Murata C16 6.8 pF GRM36COG6R8J50 Murata C17 3.9 pF GRM36COG3R9J50 Murata C18 100 nF GRM36X7R104K25 Murata J2, J3, J4, J5 50 142-0711-821 Johnson MMM5062 2-72 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information Figure 29. Power Amplifier Control Loop PCB Table 7. Power Amplifier Control Loop PCB Bill of Materials Reference Value Part Number Manufacturer C1 68 F 293D685X9020C Sprague C2 330 pF GRM36COG330J50 Murata C3 15 pF GRM36COG150J50 Murata C4 330 pF GRM36x7R331K50 Murata C5, C12, C18 10 nF GRM36X7R103K25 Murata C6 47 nF GRM36X7R473K10 Murata J1, J2, J3 DC connector Q1 Power MOSFET NTHS5445T ON Semiconductor Q2 N/C - Do not mount R1, R8 1.0 k CRG0402 5% 1 kO NEOHM R2 150 CRG0402 5% 150 O NEOHM R3 12 k CRG0402 5% 12 kO NEOHM R4, R5 5.6 k CRG0402 5% 5.6 kO NEOHM R6, R10 N/C - Do not mount R7 560 CRG0402 5% 560 O NEOHM R11 100 CRG0402 5% 100 O NEOHM U1 CMOS Op Amp AD8591 Analog Devices MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5062 2-73 Packaging Information 5 Packaging Information Shipping, Packaging and Marking Information Tape Width: 16.0 mm Tape Pitch 12 mm (part to part) Reel Diameter: 330 mm (13 in) Component Orientation: Parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. Dry Pack: This device meets Moisture Sensitiviy Level (MSL) 3. Parts will be shipped in Dry Pack. Parts must be stored at 30C and 60% relative humidity with time out of dry pack not to exceed 168 hours. In the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: b MMM5062 LLLLLL WWW AWLYYWW Marking (Top View) 1) 40C Dry Out: Bake devices at 40C TA 45C, 5% Relative Humidity for at least 192 hours. 2) Room Temperature Dry Out: Store devices at less than 20% Relative Humidity for at least 500 hours. Marking: 1st line: Motorola Logo 2nd Line: Partnumber coded on 7 characters 3rd Line: Wafer lot number (coded on 6 characters) followed by wafer number (coded on 3 digits) 4th Line: Assy site code (on 1 or 2 characters), followed by Wafer Lot Number (coded on 1 or 2 characters), followed by Year (on 2 digits) and Workweek (on 2 digits). Tape & Reel Orientation (Top View) Figure 30. Packaging Information MMM5062 2-74 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Advance Information MMM5063/D Rev. 0, 12/2002 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier (Scale 1:1) Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/ PCS1900 GPRS handheld radios. This fully integrated Power Amplifier uses a patented concept to realize the 50 matching on-chip through integration of passives on the GaAs die. This allows module functionality in a very small 7 x 7 mm package and achieves best-inclass Power Amplifier performance and multi-band capability. Applications: * Tri-Band GSM900 DCS1800 and PCS1900 * Guaranteed for Class 10 GPRS Features: * Single Supply Enhancement Mode GaAs MESFET Technology * Internal 50 Input/Output Matching * High Gain Three Stage Amplifier Design * Typical 3.5 V Characteristics: Pout = 35.2 dBm, PAE = 53% for GSM Pout = 33.8 dBm, PAE = 44% for DCS Pout = 34 dBm, PAE = 43% for PCS * Optimized and Guaranteed for Open-Loop Power Control Applications * Small 7 x 7 mm Package MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5063 2-75 Electrical Specifications VDCS1 VDCS3 VDCS2 DCS/PCS In Vreg Vapc DCS/PCS AMP GSM In DCS/PCS Out GSM Out GSM AMP VGSM1 VGSM2 VGSM3 VBS VdB This device contains 26 active transistors. Figure 1. Simplified Block Diagram 1 Electrical Specifications Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VGSM1,2,3, VDCS1,2,3, VdB 6.0 V RF Input Power GSM IN, DCS/PCS IN 11 dBm GSM OUT DCS/PCS OUT 38 36 Operating Case Temperature Range TC -35 to 100 C Storage Temperature Range Tstg -55 to 150 C TJ 150 C RF Output Power GSM Section DCS/PCS Section Die Temperature dBm NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 150 V and Machine Model (MM) 50 V. Additional ESD data available upon request. 3. Meets Moisture Sensitivity Level (MSL) 3. See Figure 25 on page 93 for additional details. MMM5063 2-76 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Supply Voltage VGSM1,2,3, VDCS1,2,3 2.7 - 5.5 V Bias Supply Voltage VdB 2.7 - 5.5 V Regulated Voltage VREG 2.5 2.8 3.0 V Power Control Voltage Vapc 0 1.8 2.8 V Band Select VBS 0 2.8 3.0 V GSM IN -1.0 - 8.0 dBm DCS/PCS IN 2.0 - 10 dBm Input Power GSM Input Power DCS/PCS Table 3. Control Requirements Characteristic Symbol Min Typ Max Unit Current for Vreg @ 2.8 V Ireg - 7.7 10 mA Band Select Low Band Enable Voltage High Band Enable Voltage VBS 2.2 0 2.8 - 0.3 Current for VBS = 2.8 V IBS - 0.76 1.0 mA Max Unit V Table 4. Electrical Characteristics (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ GSM 900 Section(Pin = -1.0 dBm, VGSM1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = VBS= 2.8 V, Vramp = 1.8 V pulsed) Frequency Range BW 880 - 915 MHz Output Power Pout 34.2 35.2 - dBm Power Added Efficiency PAE 48 53 - % Output Power @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) Pout 32.5 33.4 - dBm Power Added Efficiency @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) PAE 48 54 - % - -37 -60 -33 -45 Harmonic Output 2fo 3fo MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dBc MMM5063 2-77 Electrical Specifications Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Second Harmonic Leakage at DCS Output (Crosstalk isolation) Min Typ Max Unit - -28 -15 dBm Input Return Loss |S11| - 10 - dB Output Power Isolation (Vramp = 0 V, VGSM1,2,3 = 0 V) Poff - -45 -40 dBm Noise Power in Rx Band @ Pin = -1.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) NP Noise Power in Rx Band @ Pin = 6.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) NP Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) dBm - Pspur Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) -80 -81 dBm - -84 -86 -77 -81 - - -60 dBc No Degradation in Output Power Before and After Test DCS Section(Pin = 2.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range BW 1710 - 1785 MHz Output Power Pout 32.5 33.8 - dBm Power Added Efficiency PAE 38 44 - % Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 31 32 - dBm Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 38 45 - % - -65 -50 -45 -45 dBc Harmonic Output 2fo 3fo Input Return Loss |S11| - 9.0 - dB Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Poff - -40 -35 dBm Noise Power in Rx Band @ Pin = 2.0 dBm @ fo + 20 MHz (fo = 1785 MHz) (100 kHz measurement bandwidth) NP - -78 -75 dBm Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Pspur - - -60 dBc MMM5063 2-78 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) Min Typ Max Unit No Degradation in Output Power Before and After Test PCS Section(Pin = 3.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range BW 1850 - 1910 MHz Output Power Pout 32.5 34 - dBm Power Added Efficiency PAE 37 43 - % Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 31 32 - dBm Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 37 43 - % - -65 -50 -45 -45 dBc Harmonic Output 2fo 3fo Input Return Loss |S11| - 5.0 - dB Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Poff - -35 -32 dBm Noise Power in Rx Band @ Pin = 3.0 dBm @ fo + 20 MHz (fo = 1910 MHz) (100 kHz measurement bandwidth) NP - -78 -75 dBm Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Pspur - - -60 dBc Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation in Output Power Before and After Test MMM5063 2-79 Typical Performance Characteristics 2 Typical Performance Characteristics 2.1 GSM 60 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 38 37 36 TA = -35C 35 25C 34 85C VGSM1,2,3 = 3.5 V VdB = 3.5 V 33 Vapc = 2.2 V 32 880 887 894 901 908 TA = -35C 55 25C 50 85C VGSM1,2,3 = 3.5 V 45 VdB = 3.5 V Vapc = 2.2 V 40 880 915 887 Figure 2. Output Power versus Frequency 901 908 915 Figure 3. Power Added Efficiency versus Frequency -20 38 H2, SECOND HARMONIC (dBc) VGSM1,2,3 = 3.5 V -22 CROSSTALK (dBm) 894 f, FREQUENCY (MHz) f, FREQUENCY (MHz) VdB = 3.5 V -24 Vapc = 2.2 V -26 -28 TA = 85C -35C -30 -32 25C -34 880 887 894 901 908 f, FREQUENCY (MHz) Figure 4. Crosstalk versus Frequency MMM5063 2-80 915 37 TA = 85C 36 25C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 35 34 -35C 33 32 880 887 894 901 908 915 f, FREQUENCY (MHz) Figure 5. Second Harmonic Output versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics H3, THIRD HARMONIC (dBc) 70 69 TA = -35C 68 25C VGSM1,2,3 = 3.5 V VdB = 3.5 V 67 66 Vapc = 2.2 V 65 64 85C 63 880 887 894 901 908 915 f, FREQUENCY (MHz) Figure 6. Third Harmonic Output versus Frequency 2.2 DCS 48 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 34.4 TA = -35C 34.2 34 33.8 25C VGSM1,2,3 = 3.5 V 33.6 VdB = 3.5 V 33.4 Vapc = 2.2 V 33.2 85C 33 1710 1735 1760 47 TA = -35C 46 45 25C 44 VGSM1,2,3 = 3.5 V 43 VdB = 3.5 V Vapc = 2.2 V 42 85C 41 40 1710 1785 1735 f, FREQUENCY (MHz) 60 71 59 H3, THIRD HARMONIC (dBc) H2, SECOND HARMONIC (dBc) Figure 8. Power Added Efficiency versus Frequency 72 70 69 68 67 25C 66 65 1710 VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 35C 1735 1760 f, FREQUENCY (MHz) Figure 9. Second Harmonic Output versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 1785 f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency TA = 85C 1760 1785 58 VGSM1,2,3 = 3.5 V VdB = 3.5 V TA = -35C Vapc = 2.2 V 25C 57 85C 56 55 54 1710 1735 1760 1785 f, FREQUENCY (MHz) Figure 10. Third Harmonic Output versus Frequency MMM5063 2-81 Typical Performance Characteristics 2.3 PCS 46 Pout, OUTPUT POWER (dBm) 34.6 PAE, POWER ADDED EFFICIENCY (%) 34.8 TA = -35C 34.4 34.2 25C 34 VGSM1,2,3 = 3.5 V 33.8 VdB = 3.5 V 33.6 Vapc = 2.2 V 33.4 85C 33.2 33 1850 1865 1880 1895 TA = -35C 44 25C 42 40 85C VGSM1,2,3 = 3.5 V 38 VdB = 3.5 V Vapc = 2.2 V 36 1850 1910 1865 f, FREQUENCY (MHz) Figure 11. Output Power versus Frequency 1895 1910 Figure 12. Power Added Efficiency versus Frequency 59 70 TA = 85C 58 69 68 H3, THIRD HARMONIC (dBc) H2, SECOND HARMONIC (dBc) 1880 f, FREQUENCY (MHz) 25C -35C 67 66 VGSM1,2,3 = 3.5 V 65 VdB = 3.5 V Vapc = 2.2 V 64 1850 1865 1880 1895 f, FREQUENCY (MHz) Figure 13. Second Harmonic Output versus Frequency MMM5063 2-82 57 56 54 25C 53 52 51 50 1910 TA = -35C 55 49 1850 VGSM1,2,3 = 3.5 V VdB = 3.5 V 85C Vapc = 2.2 V 1865 1880 1895 1910 f, FREQUENCY (MHz) Figure 14. Third Harmonic Output versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Contact Descriptions and Connections 3 Contact Descriptions and Connections Table 5. Contact Function Description Pin Symbol Description 1 Vreg Regulated dc voltage for bias circuit 2 VdB DC supply voltage for active bias circuits connected to the battery 3 DCS/PCS Out DCS/PCS RF output 4 VDCS3 DCS/PCS DC supply voltage for 3rd stage 5 VDCS2 DCS/PCS DC supply voltage for 2nd stage 6 VDCS1 DCS/PCS DC supply voltage for 1st stage 7 Vapc Power control for both line-ups (Vapc = 0 V, Pout = Poff, Vapc = 1.8 V, Pout = Pmax) 8 DCS/PCS In DCS/PCS RF input 9 GSM In GSM RF input 10 VGSM1 GSM DC supply voltage for 1st stage 11 VGSM2 GSM DC supply voltage for 2nd stage 12 VGSM3 GSM DC supply voltage for 3rd stage 13 GSM Out GSM RF output 14 VBS Band selection between GSM and DCS/PCS Pin 1 Pad Corner Vreg VdB DCS/PCS Out VBS VDCS3 VDCS2 VDCS1 GSM Out Ground Plane (0.60) Vramp DCS/PCS In VGSM3 VGSM2 VGSM1 GSM In (0.95) NOTE: For optimum performance VGSM1 and VGSM2, as well as VDCS1 and VDCS2, must be strapped together on the application demobard. Figure 15. Contact Connections (Bottom View) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5063 2-83 Application Information 4 Application Information 4.1 Power Control Considerations The MMM5063 is designed for open loop (drain control) applications. A PMOS FET is used to switch the MMM5063 drain and vary the supply voltage from 0 to the battery voltage setting (Vbat). The simplified concept schematic (see Figure 22) describes the application circuit used to control the device through the drain voltage. A drain control provides a linear transfer function which is repeatable versus control voltage (see Figure 16). 4.0 Pout, OUTPUT POWER (W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 0 4.0 6.0 8.0 10 12 14 VD2, DRAIN VOLTAGE SQUARED (V2) Figure 16. Output Power versus Drain Voltage 4.2 GSM Second Harmonic (H2) Trap Circuitry When transmitting in GSM saturated mode, the second harmonic is naturally present at the RF output of the PA and reaches the antenna after additional filtering in the front-end. ETSI specifies that harmonic level cannot exceed -36 dBm. In order to improve H2 rejection in low Band (GSM), an H2 trap has been developed. The topology is based on a Low Pass Cell Filter (see Figure 17) where the first shunt capacitor is actually part of the PA output match. GSM Out 8.2 pF 0402 Murata 460 nH 7.5 nH Coilcraft 0603 Switchplexer 2.2 pF 0402 Murata 460 nH Figure 17. Low Pass Filter This circuit reduces H2 level by 7 to 8 dB with low in-band insertion losses (mainly due to the series inductor). Moreover, this structure can be used to match Power amplifier module output to the switchplexer. MMM5063 2-84 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 4.3 Application Schematics and Printed Circuit Boards Battery PMOS [Note 1] Vramp CE Vreg VAPC VBS GSM In DCS/PCS In Vd VdB MMM5063 GSM Out DCS/PCS Out [Note 2] NOTES: 1. Op/Amp is either external (with an enable pin CE) or in an ASIC. 2. The MMM5063 requires 4 to 6 RF/LF decoupling capacitors (not shown). Figure 18. Open Loop Control Application Schematic Figure 18 represents the complete Power Amplifier implementation including the MMM5063 Amplifier Module and the Control Circuitry. This functionality is realized with two separate printed circuit boards; the PA Evaluation Circuit with schematic shown in Figure 21 and PCB Layout shown in Figure 23, and the Power Amplifier Control Loop with schematic shown in Figure 22 and PCB Layout shown in Figure 24. The PA Evaluation Circuit is straightfoward and, due to the MMM5063's high level of integration, requires only a few passive components around the package. These components are mainly de-coupling capacitors. The Power Amplifier Control Loop is based on an operational amplifier driving a PMOS transistor. The PMOS device functions as a linear drain voltage regulator controlled by Vrampwith a typical gain of 2 which is set through the resistive divider R4 and R5 as shown in Figure 22. To control output power through the drain, Vapc must be indexed to the drain voltage to prevent the PA Section from drawing excessive current especially at low output power. Nevertheless, Vapc should stay above 0.8 V to provide sufficient gain for the line-up. Figure 19 describes the application circuit used to control Vapc through the drain voltage. It uses Vreg to pre-position Vapc at 0.9 V and add a voltage which is dependent on the drain Voltage. Vreg = 2.8 V R8 = 1.0 k 0 V < Vdrain < VBAT R7 = 560 Vapc RVAPC = 700 Internal to the die Figure 19. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5063 2-85 Application Information R8 and RVapc set Vapc at 0.9 V while R7 sets the Vapc slope. Vapc versus Vdrain is shown in the Figure 20. 2.4 2.2 2.0 Vapc (V) 1.8 1.6 1.4 1.2 1.0 0.8 0 0.5 1.0 1.5 2.0 Vdrain (V) 2.5 3.0 3.5 4.0 Figure 20. Vapc versus Vdrain It is possible that the Power Control DAC output voltage can be in the 200 mV to 2.0 V range. This raises a concern for the MMM5063 ramp control voltage (Vramp) which must start at 0 V to get enough output power dynamic range. To overcome this limitation, a resistor (R6 in Figure 22) is used to set an additional offset (200 mV with R6 = 39 k). This residual voltage is then subtracted the DAC output voltage through the differential Operational Amplifier. MMM5063 2-86 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information C9 10 nF C1 N/C C2 330 pF C6 N/C C11 1.0 nF C13 N/C C15 10 nF VDCS2 C8 22 pF VDCS3 VDCS1 DCS/ PCS In Vapc DCS/PCS In GSM In C7 22 pF DCS/PCS Out C4 N/C VGSM1 C5 220 pF Vreg C12 22 pF C14 10 nF C17 3.9 pF VBS GSM In C18 100 pF VGSM3 C16 6.8 pF VGSM2 GSM Out C3 N/C VdB DCS/PCS Out C10 47 pF NOTE: N/C = No Connect, Do not mount. GSM Out Figure 21. PA Evaluation Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5063 2-87 Application Information C6 47 nF C5 10 nF NOTE: N/C = No Connect, Do not mount. C1 68 F R8 1.0 k R10 N/C R3 12 k R7 560 C3 15 pF R2 150 C2 330 pF C4 330 pF C18 10 nF R6 39 k R5 5.6 k R4 5.6 k R11 150 C12 10 nF Figure 22. Power Amplifier Control Loop MMM5063 2-88 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information Figure 23. PA Evaluation Circuit PCB Table 6. PA Evaluation Circuit PCB Bill of Materials Reference Value Part Number Manufacturer C1, C3, C4, C6, C13 N/C - Do not mount C2 330 pF GRM36COG330J50 Murata C5 220 pF GRM36X7R221K50 Murata C7, C8, C12 22 pF GRM36COG220J50 Murata C9, C14, C15 10 nF GRM36X7R103K25 Murata C10 47 pF GRM36COG470J50 Murata C11 1.0 nF GRM36X7R102K25 Murata C16 6.8 pF GRM36COG6R8J50 Murata C17 3.9 pF GRM36COG3R9J50 Murata C18 100 nF GRM36X7R104K25 Murata J2, J3, J4, J5 50 142-0711-821 Johnson MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5063 2-89 Application Information Figure 24. Power Amplifier Control Loop PCB Table 7. Power Amplifier Control Loop PCB Bill of Materials Reference Value Part Number Manufacturer C1 68 F 293D685X9020C Sprague C2 330 pF GRM36COG330J50 Murata C3 15 pF GRM36COG150J50 Murata C4 330 pF GRM36x7R331K50 Murata C5, C12, C18 10 nF GRM36X7R103K25 Murata C6 47 nF GRM36X7R473K10 Murata J1, J2, J3 DC connector Q1 Power MOSFET NTHS5445T ON Semiconductor Q2 N/C - Do not mount R1, R8 1.0 k CRG0402 5% 1 kO NEOHM R2 150 CRG0402 5% 150 O NEOHM R3 12 k CRG0402 5% 12 kO NEOHM R4, R5 5.6 k CRG0402 5% 5.6 kO NEOHM R6, R10 N/C - Do not mount R7 560 CRG0402 5% 560 O NEOHM R11 100 CRG0402 5% 100 O NEOHM U1 CMOS Op Amp AD8591 Analog Devices MMM5063 2-90 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Packaging Information 5 Packaging Information Shipping, Packaging and Marking Information Tape Width: 16.0 mm Tape Pitch 12 mm (part to part) Reel Diameter: 330 mm (13 in) Component Orientation: Parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. Dry Pack: This device meets Moisture Sensitiviy Level (MSL) 3. Parts will be shipped in Dry Pack. Parts must be stored at 30C and 60% relative humidity with time out of dry pack not to exceed 168 hours. In the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: b MMM5063 LLLLLL WWW AWLYYWW Marking (Top View) 1) 40C Dry Out: Bake devices at 40C TA 45C, 5% Relative Humidity for at least 192 hours. 2) Room Temperature Dry Out: Store devices at less than 20% Relative Humidity for at least 500 hours. Marking: 1st line: Motorola Logo 2nd Line: Partnumber coded on 7 characters 3rd Line: Wafer lot number (coded on 6 characters) followed by wafer number (coded on 3 digits) 4th Line: Assy site code (on 1 or 2 characters), followed by Wafer Lot Number (coded on 1 or 2 characters), followed by Year (on 2 digits) and Workweek (on 2 digits). Tape & Reel Orientation (Top View) Figure 25. Packaging Information MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMM5063 2-91 Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier (Scale 2:1) Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radios. The device is packaged in the QFN-20 package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact. MRFIC0970 2-92 * Target 3.2 V Characteristics: RF Output Power: 34.5 dBm Typical Efficiency: 50% Typical * Single Positive Supply Solution * Available in Tape and Reel only. R2 Suffix = 2500 Units per 12 mm, 13 inch Reel MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics D1 D2 RFin (G1) D3 VG1,2 ABC1,2 VGG1,2 GND ABC3 ABC VG3 VGG3 Vref Figure 1. Functional Block Diagram 1 Electrical Characteristics Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VD1,2,3, Vabc Vref 8.0 5.0 V V RF Input Power Pin 15 dBm RF Output Power Pout 38 dBm Operating Case Temperature Range TC -40 to 85 C Storage Temperature Range Tstg -40 to 85 C TJ 150 C Junction Temperature NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2 ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 250 V and Machine Model (MM) 60 V. This device is rated Moisture Sensitivity Level (MSL) 1. Additional ESD data available upon request. Table 2. Recommended Operating Conditions Characteristic Supply Voltage Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit VD1,2,3 Vabc Vref 2.8 0 0.04 - 5.5 5.5 1.8 Vdc V V Pin 5.0 - 10 dBm MRFIC0970 2-93 Electrical Characteristics Table 3. Electrical Specifications (VD1,2,3 = 3.2 V, Vabc = 2.6 V, Pin = 5.0 dBm, Peak measurement at 12.5% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Frequency Range BW 880 - 915 MHz Output Power Pout 34.5 - - dBm Power Added Efficiency PAE 50 - - % Minimum Output Power (Vref = 0.04, Vabc = 2.6 V) - - -17 dBm Power Control Slope (Vref = 0.1 to 1.8 V, Vref = 0.01 V) - - 50:1 RFVrms Bleed thru Power (Pin(fo) -12dBm, Vref = 0.04, Vabc = 10 k load) - - -36 dBm RF Leakage Current (IDD1 + IDD2 +IDD3, Pin (fo) 5.0 dBm) (Vabc = 10 k load, Vref = 0.04 V) - - 35 mA Output Power Switching Speed ( step input of Vref RF Pout within 1.0 dB of final value) - - 1.0 s - - 6.0 dB - - -73 -85 - - -30 Input Return Loss Noise Power in Rx band 925 to 935 MHz 935 to 960 MHz Stability-Spurious Output (Load VSWR 6:1 all phase angles, Adjust VD1, 2&3 for specified power) Load Mismatch Stress (Load VSWR = 10:1 all phase angles, 5 seconds, Adjust VD1, 2&3 for specified power) MRFIC0970 2-94 /Vref |S11| NP Pspur dBm dBc No Degradation in Output Power Before & After Test MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Pin Connections 2 Pin Connections D1 20 S1/ RFin N.C. GND N.C. (G1) 19 18 17 16 D2 1 15 VG1,2 N.C. 2 14 VGG1,2 N.C. 3 13 ABC N.C. 4 12 VGG3 N.C. 5 11 VG3 6 7 8 9 10 D3/ D3/ D3/ D3/ N.C. RF RF RF RF OUT OUT OUT OUT Figure 2. Pin Connections 3 Typical Performance Characteristics Pout, OUTPUT POWER (dBm) 35.6 35.4 35.2 TA = -40C 25C 35 Pin = 5.0 dBm VDD = 3.2 V Vref = 1.8 V 34.8 34.6 85C 34.4 34.2 880 885 890 895 900 905 f, FREQUENCY (MHz) 910 915 Figure 3. Output Power versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFIC0970 2-95 Typical Performance Characteristics 38 Pout, OUTPUT POWER (dBm) 37.5 VDD = 5.5 V 37 36.5 36 35.5 Pin = 5.0 dBm TA = 25C Vref = 1.8 V 3.2 V 35 34.5 2.8 V 34 33.5 880 885 890 895 900 905 f, FREQUNCY (MHz) 910 915 Figure 4. Output Power versus Frequency PAE, POWER ADDED EFFICIENCY (%) 65 60 TA = -40C 25C 55 50 45 880 85C Pin = 5.0 dBm VDD = 3.2 V Vref = 1.8 V 885 890 895 900 905 f, FREQUENCY (MHz) 910 915 Figure 5. Power Added Efficiency versus Frequency PAE, POWER ADDED EFFICIENCY (%) 65 60 VDD = 2.8 V 55 3.2 V 50 45 Pin = 5.0 dBm TA = 25C Vref = 1.8 V 40 35 880 5.5 V 885 890 895 900 905 f, FREQUENCY (MHz) 910 915 Figure 6. Power Added Efficiency versus Frequency MRFIC0970 2-96 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Schematic 4 Application Schematic VDD1 RF In 470 1.0 F Ferrite Bead 120 12 470 0.1 F 100 pF 1.0 nF T2 T3 20 2.7 39 pF 4700 pF 0.01 F 1.0 nF VDD2 19 18 T1 16 1 15 1.0 nF 2 N.C. 14 1.0 nF 3 N.C. 13 1.0 nF 4 N.C. 12 1.0 nF 5 N.C. 11 0.1 F 6 T1 = .100 in, Zo = 50 T2 = .275 in, Zo = 50 T3 = .166 in, Zo = 50 T4 = .041 in, Zo = 50 T5 = .420 in, Zo = 50 17 N.C. 7 T4 8 9 680 0.1 F Vref ABC 240 VG3 N.C. 10 12.55 nH Coilcraft 1601-10 27 pF T5 4700 pF VG1,2 6.8 pF VDD3 1.0 nF 0.1 F 47 F RF Out Figure 7. Application Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFIC0970 2-97 Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Device Marking Package MRFIC1870 1870 QFN-20 The MRFIC1870 is a single supply, RF power amplifier designed for the 2.0 W DCS/PCS handheld radios. The device is packaged in the QFN-20 package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact. * Target 3.2 V Characteristics: RF Output Power: 32 dBm Minimum Efficiency: 42% Minimum * Single Positive Supply Solution D1 D2 G3 G1 D3 VG1,2 ABC1,2 VGG1,2 GND ABC3 ABC VGG3 VG3 Vref Figure 1. Functional Block Diagram MRFIC1870 2-98 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA D1 20 S1/ GND GND 19 18 N.C. G1 17 16 D2 1 15 VG1,2 GND 2 14 VGG1,2 G3 3 13 ABC G3 4 12 VGG3 GND 5 11 VG3 6 7 8 9 10 D3/ D3/ D3/ D3/ GND RF RF RF RF OUT OUT OUT OUT Figure 2. Contact Connections MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFIC1870 2-99 MRFIC1870 2-100 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Three RF/IF Subsystems - Data Sheets Device Number Page Number Transceivers MC13190 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3 Miscellaneous Functions ADCs/DACs MC144110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-22 MC144111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-22 Encoders/Decoders MC145026 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-23 MC145027 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-23 MC145028 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-23 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3-1 3-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Advance Information MC13190/D Rev. 0, 10/2002 MC13190 2.4 GHz Short-Range, Low-Power Transceiver Package Information Plastic Package Case 1311 (QFN-32, 5x5 mm) Ordering Information Device Device Marking Package MC13190FC 13190 QFN-32 The MC13190 is a Short-Range, Low-Power 2.4 GHz ISM band single chip radio. Together with an appropriate microprocessor or DSP for a Baseband Controller, it provides cost effective solutions for short-range (up to 10 meters), battery-powered data links. Applications include remote control, wire replacement, wireless streaming audio, and wireless game control. The receiver includes a low noise amplifier (LNA), AM demodulator, band pass filter and limiting IF. The transmitter includes modulation control, baseband filtering and AM modulator. An on-chip PLL/VCO derives the RF frequency from a fixed 256 multiplication of the reference frequency. The device is fabricated using Motorola's RF BiCMOS process and is housed in a 32 lead QFN package with backside ground. * Typical Receiver Sensitivity: -71 dBm for 2x10-4 Bit Error Rate (BER) * Typical Output Power = 4.8 dBm * Fully Differential RF Input and Output MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-3 Electrical Specifications DEMOD_BYPASS DEMOD_OUT_P LNA_SW LNA_IN_P LNA_IN_N DEMOD_OUT_N Limiter 80 dB AM Demod LNA LNA_SW Baseband Filter RX_DATA RX_EN TX_EN PLL_EN Logic Interface LPF 1/256 o TRIM_EN LNA_SW fref FREF TX_DATA MOD_OUT_P MOD_OUT_N Data 60% Modulator Modulation Filter Modulation Control Figure 1. Simplified Block Diagram 1 Electrical Specifications Table 1. Maximum Ratings Rating Symbol Value Unit VCC, VDD 3.2 V 3.2 V 3.9 V CW Input Power 7.0 dBm Gnd IC Contacts Voltage 0.3 V Capacitance Load at RX_DATA 10 pF Supply Voltage Signal and Control IC Contacts Demodulator Supply Voltage Demod_VCC Storage Temperature Tstg -65 to 150 C Operating Temperature TA 0 to 50 C NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. Meets Human Body Model (HBM) ) 2.0 kV and Machine Model (MM) 200 V except RFand Limiter circuit contacts. Limiter circuit contacts (contacts 19 and 17) = 900 V HBM, 125 V MM. RF Contacts = 80 V HBM, 50V MM. RF contacts have no ESD protection. Additional ESD data available upon request. MC13190 3-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Supply Voltage VCC 2.5 2.75 3.0 V Digital Supply VDD 2.0 2.75 3.0 V 80% VDD - VDD V 2.7 3.1 3.3 V 2.411 - 2.473 GHz Maximum Input Power into LNA_IN - - 0 dBm Differential Load Impedance for Transmitter (MOD_OUT) - 50 - Differential Source Impendance for Receiver (LNA_IN) - 25 - Transmit Data Rate (Manchester Encoded) 4 5 6 Mbits/s Signal and Control Pins Demodulator Supply Voltage (no LNA input signal) Input Operating Frequency Transmit Data Encoding Manchester, 50% Duty Cycle Table 3. System Characteristics (VCC = 2.75 V, TA = 25C, RF Receiver Frequency = 2.442 GHz, 60% AM, Bit Rate = 5.0 Mbps Manchester coded, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit -65 -71 - dBm Baseband Filter Lower Corner Frequency - 0.35 - MHz Baseband Filter Upper Corner Frequency - 6.0 - MHz Receiver Recovery Time from a 7.0 dBm Burst - - 15 s AM Modulation Depth 50 60 88 % Transmit Power (modulated) 1.9 4.8 - dBm - 11 - mA - 54 27 40.5 - - 51 - Receiver Sensitivity for 2x10-4 Bit Error Rate Receive Supply Current (Pin = -50 dBm) ICC Transmit Supply Current Logic 1 Logic 0 50% Duty Cycle ICC Standby Supply Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA mA A MC13190 3-5 Electrical Specifications Table 4. Receiver Section (VCC = 2.75 V, TA = 25C, RF Receiver Frequency = 2.442 GHz, 60% AM, Bit Rate = 5.0 Mbps Manchester coded, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Current Consumption Active Disabled - 11 7.0 - mA A Recovered Signal Level at -65 dBm - 5.0 - mVpp Current Consumption Active Disabled - 240 3.0 - RX_DATA Drive Capability (5.0 MHz) - - 10 Low Noise Amplifier and Am Demodulator Limiter and Level Shifter A 80% VDD Output High with respect to VDD_RX_DATA @ -100 A pF V Output Low with respect to GND @ -100 A 0.2 V Table 5. Transmit Section (VCC = 2.75 V, TA = 25C, RF Transmit Frequency = 2.442 GHz, 60% AM, Bit Rate = 5.0 Mbps Manchester coded, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit - 10.2 1.1 - mA A 2.4 - 2.484 GHz MHz Frequency Synthesizer (VCC = 2.75 V, TA = 25C, unless otherwise noted.) Total Current Consumption when active Active Disabled Frequency Range (FREF x 256) Reference Input Frequency fref 9.375 - 9.704 RF Frequency Divide Ratio N - 256 - Trim Time (using fixed clock derived from reference) - - 100 s Time required to turn on and lock after trim (250 kHz Loop Bandwidth) - 25 - s Reference Input Level Ref Low Ref High - - VDD x 80% - VDD x 20% - MC13190 3-6 V MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 5. Transmit Section (Continued) (VCC = 2.75 V, TA = 25C, RF Transmit Frequency = 2.442 GHz, 60% AM, Bit Rate = 5.0 Mbps Manchester coded, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit - 16.4 3.0 - mA A AM Modulation Depth Range 50 60 88 % Output Power 2.0 4.8 - dBm Occupied Bandwidth (99% Signal Energy) - 22 - MHz Out of Band Spurious at Antenna Port 30 MHz to 1.0 GHz 1.0 to 1.275 GHz 1.8 to 1.9 GHz 5.15 to 5.3 GHz - -45 -40 -45 -50 - 48 - 52 AM Modulator Current Consumption Active Disabled dBm Acceptable Duty Cycle for TX_DATA Signal (Manchester Encoded) % Table 6. Enable Logic Levels (VCC = 2.75 V, TA = 25C) Symbol Characteristic Min Max VIH High Level Input Voltage 80% VDD - VIL Low Level Input Voltage - 20% VDD IIH High Level Input Current - 1.0 A IIL Low Level Input Current - 1.0 A MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-7 Contact Connections 2 Contact Connections Table 7. Control Contact Definitions Contact Description RX_EN Enables LNA, Demod and Limiter TX_EN Enables TX Filter, Modulation Control, PA/Modulator PLL_EN Enables Frequency Synthesizer and VCO GND GND MOD_OUT_N GND LNA_IN_N Switches LNA Inputs to Ground in TX Mode MOD_OUT_P LNA_SW GND Enables VCO Trimming LNA_IN_P TRIM_EN 32 31 30 29 28 27 26 25 MOD_VCC 1 24 LNA_VCC MOD_BUFF_VCC 2 23 DEMOD_VCC PLL_VCC 3 22 DEMOD_BYPASS LOGIC_VDD 4 21 DEMOD_OUT_P TX_DATA 5 20 DEMOD_OUT_N TX_EN 6 19 LIM_VCC PLL_EN 7 18 RX_EN FREF 8 10 11 12 13 14 15 16 GND VCO_VCC LPF LIM_GND_2 LNA_SW RX_OUT_DRVR_GND TRIM_EN 9 VDD_RX_DATA 17 RX_DATA Figure 2. Contact Connections MC13190 3-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 3 Application Information 3.1 Introduction The MC13190 is a 2.4 GHz transceiver that takes advantage of AM modulation to provide wide-band data capability with simple, low-cost circuitry. The transmit and receive baseband filters are designed for 5 Mbps Manchester encoded data. This high data rate capability is intended to provide low latency, avoid interference through short-burst protocol and allow for multiple retransmissions. The baseband interface is simple to allow maximum flexibility in applications. Depending on protocol choices and bit error rate requirements, the MC13190 is capable of supporting up to 1 Mbps data throughput. 3.2 Modes of Operation The MC13190 has three modes of operation; Standby, Transmit and Receive. Refer to Figure 1, Simplified Block Diagram, for circuit functions. 3.2.1 Standby Mode Standby mode is automatically initiated when all enable (_EN) IC Contacts are kept low. The current consumption during standby mode is typically 51 A. 3.2.2 Transmit Mode In the Transmit mode, the VCO frequency is set based on the reference by the PLL, the transmit chain is enabled, the transmit data is filtered and AM-modulates the transmit carrier. This sequence is shown in Figure 3. The switches to ground at the input of the LNA as well as the PLL are enabled ahead of the TX chain. Optionally, an external Transmit/Receive switch can be used and LNA_SW can be left low. This delay allows the PLL to settle prior to application of data. During power-up of the TX chain, TX_DATA should be kept low. This guarantees the modulator powers up at minimum output power which will prevent splatter. LNA_SW, PLL_EN TX_EN 8-Bit Preamble TX_DATA 5Mbps Data 25 s 2.0 s 5.0 s 2.0 s No Specified Time Limit Figure 3. Recommended Timing During Transmit Mode It should be noted that the transmit baseband filter is optimized for 5 Mbps Manchester encoded data. The MC13190 does not provide this encoding. See Section 3.6.1 for discussion of Manchester encoding. The internal 2.4 GHz VCO includes circuitry to perform an automated trimming cycle. In the TRIM cycle, the VCO will trim itself to the required frequency keeping the control voltage within the specified range. After initial trimming, the VCO does not require trimming again until the supply voltage and/or the temperature changes. Trimming every one to 10 seconds is, however, recommended. The TRIM cycle timing is shown in Figure 4. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-9 Application Information PLL_EN TRIM_EN 10 s 10 s at least 100 s Figure 4. Recommended Timing During Trim Mode The PLL is enabled, a delay of 10 s is observed for the VCO and the PLL to settle, and then trimming is begun. Trimming continues until TRIM_EN is taken low and should continue for a minimum of 100 s. After the TRIM_EN is taken low, the trim information is stored internally, a process that takes about 10 s. PLL_EN must remain high while the trim information is stored. The frequency synthesizer uses a fixed 256 divider and must be enabled in both TRIM and TX mode. The frequency synthesizer is not required in the receive mode and may be disabled. The frequency synthesizer requires an external reference signal (IC Contact 8), FREF, and an external loop filter connected to IC Contact 13. 3.2.3 Receive Mode In Receive mode, the 2.4 GHz signals from the antenna are amplified by the LNA, peak detected in the demodulator and filtered and amplified to produce the RX_DATA output. The response time after the first time RX_EN is pulled high is set by the charging time of the demodulator bypass capacitor and is about 700 s. Once the capacitor is charged, internal circuitry maintains the charge for at least one second and the response time is reduced to around 7 s. An 8-bit preamble allows for receive circuitry setting. The receiver baseband filter is optimized for Manchester encoded 5 Mbps data. The Receive sequence is shown in Figure 5. 8-Bit Preamble RX_EN 5Mbps Receive Data RX_DATA * No Specific Time Limit * 700 s for 1st RX_EN 7.0 s thereafter, assuming TX Cycle $ 1 sec Figure 5. Recommended Timing During Receive Mode 3.3 Transmit and Receive Sequencing Figure 6 shows the sequencing and timing for a typical Trim, Transmit, Receive and Re-transmit cycle. Note that the PLL and VCO (PLL_EN) are off during the Receive cycle. This sequence can be repeated as often as needed and is controlled by the applications software. The TRIM cycle should be repeated at regular intervals of 1 to 10 seconds or when the temperature and/or voltage have changed. MC13190 3-10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Transmit Cycle Receive Cycle Transmit Cycle PLL_EN 10 s Figure 6. Transmit/Receive Timing Sequence TRIM_EN 100 s LNA_SW [Note] 5.0 s TX_EN 25 s 2.0 s 25 s 2.0 s TX_DATA 5.0 s 2.0 s 5.0 s 2.0 s RX_EN 700 s for 1st RX_EN 7.0 s thereafter, assuming TX Cycle $ 1 sec NOTE: LNA_SW can be left "low" if external T/R Switch is used. MC13190 3-11 Application Information RX_DATA Application Information 3.4 Basic Transceiver Circuit Figure 7 shows the basic transceiver evaluation board circuit schematic with reference oscillator and Figure 8 shows the optional external LNAs. Figures 9 and 10 show the evaluation board printed circuit board layout details. This realization is intended for device evaluation and has been designed with a 50 interface. C19, C20, L10 and L12 form a lumped-element balun. In equipment applications a differential antenna can be interfaced through matching elements directly to the LNA and Modulator contacts. A PCB dipole antenna with balun and SMA connector is available for link evaluations. The RF circuit layout is critical and should be duplicated exactly. In normal applications, the entire transceiver should be shielded and control lines from the baseband should be as short as possible. The optional external LNA circuits require an external differential switch that is implemented with PIN diodes D1, D2, D3 and D4. T1 and T2 are quarter wave lines for isolation. IC Contact 15, LNA_SW, is grounded since the internal switch is not used. If the LNA are used, C25 and C30 are not placed and "zero Ohm" resistors R5, R9, R13 and R14 insert the LNAs into the receive path. Voltage supply Contacts 1, 2, 3, 12, 19, 23 and 24 require bypass capacitors as close as possible to the device. Logic supply Contact 4 can directly interface to the baseband supply in equipment applications. The DEMOD_BYPASS (Contact 22) bypasses the demodulator bias circuitry for both RF signals and low frequency signals. The differential demodulator output from contacts 20 and 21 is available at TP1 and TP2. The PLL loop filter is the standard R+C // C network and connects between contacts 12 and 13. MC13190 3-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information J5 RF_IN C19 L12 C20 L10 2.7 V C17 TX_EN C32 L3 L2 C11 2.7 V C31 R21 D3 T1 D1 D4 C13 C16 T2 D2 C14 L4 L1 R5 A To Optional LNA #1 B R13 C25 C To Optional LNA #2 R14 D C30 R9 L7 L11 C12 C15 2.7 V C1 32 R15 2.7 V R2 C33 C8 29 28 27 26 25 MC13190 R16 C18 C5 22 R3 Jumper C4 20 6 19 7 18 8 * * Backside ground contact soldered to PCB 9 10 11 12 N.C. 2.7 V TP1 Connected TP2 to via 21 5 Q1 R20 R4 23 13 L5 15 R19 2.7 V C36 17 16 R18 R17 VCO_VCC R1 C2 14 VCO_VCC Y1 30 1 2 3 4 C9 C7 31 24 C38 C21 2.7 V C6 U1 2.7 V C37 C34 C35 C3 N.C. 2.7 V N.C. TX_EN Figure 7. Transceiver Application Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-13 Application Information Optional LNA #1 Optional LNA #2 C23 R11 RX_EN R7 RX_EN C27 R8 R10 R6 R12 L6 L8 C24 Q2 C26 C10 L13 A C C29 C22 L9 Q3 C28 B D Figure 8. Optional LNA Circuits Table 8. Bill of Materials Reference Value Description C1, C6, C11, C16, C18, C21, C33, C35, C36, C37 0.1 F 0402 Ceramic, Murata C2 82 pF 0402 NPO Ceramic, Murata C3 12 pF 0402 NPO Ceramic, Murata 1000 pF 0402 Ceramic, Murata C5 1.0 F 0603 Ceramic, Murata C7, C8 27 pF 0402 NPO Ceramic, Murata C9, C34 100 pF 0402 NPO Ceramic, Murata C10, C13, C14, C29 6.0 pF 0402 NPO Ceramic, Murata C12, C15 3.0 pF 0402 NPO Ceramic, Murata C17 10 pF 0402 NPO Ceramic, Murata C19, C20 1.5 pF 0402 NPO Ceramic, Murata C22, C28 0.5 pF 0402 NPO Ceramic, Murata C24, C26 2.0 pF 0402 NPO Ceramic, Murata C25, C30, C31, C32, C38 33 pF 0402 NPO Ceramic, Murata BAR63-03W Pin Diode, Siemans C4, C23, C27 D1, D2, D3, D4 J2, J3, J4 1 x 10 Header Strip J5 SMA Right Angle L1, L4 2.2 nH 0402 Toko L2, L3 15 nH 0402 Toko L5 2.7 nH 0603 Toko L6, L7, L8, L11 3.0 nH 0402 Toko L9, L13 0.5 nH 0402 Toko MC13190 3-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information Table 8. Bill of Materials (Continued) Reference L10, L12 Value Description 1.8 nH 0402 Toko Q1 MMBT3904 Q2, Q3 MBC13900 R1 12 k 0402 5% R2 560 0402 5% R3 68 k 0402 5% R4 51 0402 5% R5, R9, R13, R14 0 0402 R6, R12 49 k 0402 5% R7, R11 130 0402 5% R16, R17, R18 180 0402 5% R8, R10, R15, R19, R20 10 0402 5% R21 270 0402 5% Z0 = 25 , = 0.72 Microstrip Transmission line, r = 4.5 mils, t = 10 mils T1, T2 U1 Y1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 9.357 MHz Temex MC13190 3-15 Application Information 2.25" 2.0" Figure 9. Transceiver Circuit PCB Topside (Active Dielectric = 10 mil FR4, Total Board Thickness = 0.062") MC13190 3-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 2.25" 2.0" Figure 10. Transceiver Circuit PCB Bottom Side (Active Dielectric = 10 mil FR4, Total Board Thickness = 0.062") 3.5 Baseband Interface Referring again to Figure 1, the Simplified Block Diagram, the baseband interface is accomplished through the Logic Interface block. TX_DATA and RX_DATA provide the data interface. The MC13190 is designed to transmit and receive 5 Mbps Manchester encoded data. Data rates of between 4 and 6 Mbps are acceptable. The data pulses should be between 100 and 200 ns duration. The MC13190 does not provide encoding or decoding. The baseband device chosen must be capable of encoding and decoding a 5 Mbps data stream. FREF can be supplied by the baseband and can be "warped" or "dithered" to provide frequency variation. The remaining five control lines are controlled through GPIO lines. 3.5.1 Low Data Rate Applications For low data rate applications, an alternate approach can be used to employ a low-cost microcontroller. Figure 11 shows the basic principals. A Motorola MC68HC908GR8 is shown but the same approach can be used with any MCU that is capable of performing the required task. The system reference frequency is chosen to be the 9.537 MHz required for the MC13190's transmit synthesizer. The reference is also fed to a programmable divider which becomes an FSK generator controlled by the transmit data from the MCU. F1 will be 4.769 MHz while F2 will be 2.384 MHz. These frequencies AM modulate the 2.44 GHz carrier as though they were data. On the receive side, RX_DATA drives a peak detector tuned for F1. F1 therefore MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-17 Application Information MC68HC908GR8 Microcontroller SPI LNA_SW TRIM_EN TX_EN RX_EN PLL_EN Peak Det MC13190 RF Transceiver Modulation Filter 1/256 LPF Modulator Control LNA AM Demod Control Modulation Control 60% fref Limiter 80 dB Matching Circuit MOD_OUT_P DEMOD_BYPASS DEMOD_OUT_P Baseband Filter MOD_OUT_N DEMOD_OUT_N Data Logic Interface FREF TX_DATA RX_DATA /2 /4 TX_DATA RX_DATA SCI GPIO 8k Flash M68HC08 Core Clock Module 9.537 MHz A/D produces a high output and F2 produces a low output. This recovered data stream is feed to the receive data input of the MCU. FSK, rather than ASK, was chosen to keep the baseband limiter compressed and reduce baseband noise. This technique has been shown to work up to 100 kb/s data rate. Details are given in Motorola Application Note AN1946/D. LNA_IN_N LNA_IN_P Figure 11. MC13190 Interface with HC08 Microcontroller for Low Data Rate Applications MC13190 3-18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 3.6 Protocol Considerations 3.6.1 Manchester Encoding As mentioned earlier, the MC13190 has been designed for use with protocols that employ Manchester encoding. The basic principle of this coding technique is that each data bit is encoded as a transition as opposed to a level. This results in two half-bits as shown in Figure 12. A data 1 bit is encoded as a highlow transition while a data 0 bit is encoded as a low-high transition. Each data bit then has a transition which facilitates data clock recovery. The half-bits are the transmitted and received symbols so each data bit results in two channel symbols. M 1 1 0 0 1 0 1 Data Bits B = 200 ns Channel Bits B = 100 ns 2 Figure 12. Manchester Encoding of 5 Mbit Data At 5 Mbps a data bit is 200 ns long. The channel bits are then 100 ns each but because of the encoding algorithm there can be two half-bits in sequence when a data bit transition occurs. This is also the maximum number of half bits that can occur in sequence. Although the active filters in the MC13190 transmitter are designed for a specific data rate and Manchester encoding, there is nothing to prevent the application from using other rates or encoding in just the transmitter. The transmitter uses slope control and low-pass filtering to control the bandwidth of the baseband signal. These filters assume a 100 ns Manchester encoded half-bit with a tightly controlled duty cycle. TX_DATA is dc-coupled so there is no limit on the length of the data bit. A data 1 or 0 can be maintained indefinitely. If the pulse length at TX_DATA is much shorter than 100 ns, the slope control will not allow the modulator to peak and the modulation index will decrease. The receive filters are hard-wired for 5 Mbps Manchester encoded data as shown in Figure 12 and cannot be changed by the user. These filters have bandpass response to maximize the performance of the receiver. The receiver is ac-coupled. Using Manchester encoded data rates outside the range of 4 to 6 Mbps will result in less than optimum performance. If the rate is too high or low, the data will fall out of the receiver passband and performance will degrade quickly. 3.6.2 Channel Considerations The 2.4 GHz band is a noisy environment prone to multipath fading. Noise takes many forms but, at 2.4 GHz, microwave ovens and other users predominate. Multipath fading occurs when the same signal arrives at the receiver at different times. Not only can multipath impact the absolute signal level but it can also result in frequency selective fading and intersymbol interference. The AM modulation scheme used in the MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-19 Application Information MC13190 makes it susceptible to frequency selective fading through the "notching" of the carrier causing performance degradation in the envelope detector. These effects cannot be avoided so must be dealt with in protocol design. Sufficient margin must be built into the link and redundancy into the protocol to reduce bit error rate to an acceptable level. 3.6.3 Packet Structure The 5 Mbps data rate that the MC13190 supports is high enough to allow multiple users to occupy the same frequency channel using time division multiple access (TDMA) techniques. The protocol for implementing the TDMA is left up to the system integrator and is heavily dependent on the number of users per unit area, the amount of data to be transmitted per user per unit time and the method used to detect the symbols. The high level frame structure should allow for the total number of users required as well as the number of retransmissions allocated to each user with a guard band between each packet to allow for the timing uncertainty associated with each of the users clocks. The upper bound of the frame structure is determined by the desired data throughput for each user and the latency of the data. If low latency is the primary design goal, a short frame should be used. The packets should be structured to provide for a robust synchronization between the transmitter and the receiver as well as a means to deliver the payload reliably with some level of error detection or correction. The packet should be designed with a preamble of at least 8 bits to allow for transceiver settling, a synchronization code, a header, the payload, and the error detection overhead. A suitable form of error detection could be an N-length CRC calculated and appended to the packet. A common method of synchronization used in the industry is to transmit a length of a code that has been designed to provide for fast acquisition of the codeword yet low probability of false detection. The ideal code word has a very low autocorrelation side lobe. That is to say, when the codeword is shifted the correlation value is very low. A Barker or Neuman-Hofman code could be used and are well documented in most digital communication texts. The MC13190 receiver outputs a waveform that has no timing associated with it. In other words, the baseband symbol detector will need to determine the waveform timing in order to make the correct bit decisions on the sampled waveform. Since the transmitted date is Manchester encoded, it is recommended that the input waveform be at least 8X oversampled so that there are at least 4 samples per half of the waveform. The correlation with the synchronization word should be performed on all samples of the waveform, but it is recommended that the bit decisions be based only on the second half of the Manchester encoded waveform since a transition is guaranteed at the middle of each transmitted bit. It should be noted that an artifact of the MC13190 baseband filtering is some corruption of the first half of the Manchester encode bit cycle as well. 8X oversampling should provide for adequate timing resolution of the bit edge transitions to insure correct bit decisions if the packet length is not too long. The packet length will be limited primarily by the accuracy of the reference clocks in the system. If the reference source has a guaranteed stability of 50 ppm, then a worst case timing shift will be 100 ppm or up to 20 ps per 200 ns bit. This would limit the packet length to 250 s before the accumulated timing drift will begin to affect the symbol detection. A method of coherent detection could be employed where a tracking loop is implemented if longer packers are desired. MC13190 3-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Application Information 3.7 Device Characterization Information Table 9. Broadband Differential Scattering Parameters f (GHz) LNA RX Mode LNA TX Mode Mag Mag 0.5 0.866 -17 0.946 -51.5 1.0 0.830 -40.2 0.807 -115.7 1.5 0.655 -69.3 0.736 173.4 2.0 0.440 -110.3 0.784 121.1 2.5 0.340 -176.5 0.845 89.7 3.0 0.478 120 0.889 69.8 3.5 0.640 86.6 0.917 56.1 4.0 0.756 66.4 0.936 46 4.5 0.831 52.5 0.950 38.2 5.0 0.879 42.3 0.959 31.8 5.5 0.910 34.4 0.966 26.5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC13190 3-21 Technical Data Rev. 0, 02/2003 MC144110 Digital-to-Analog Converters with Serial Interface These devices are not recommended for New Design. For the complete data sheet please visit our website at http://www.motorola.com/semiconductors Ordering Information Device Package MC144110P Plastic DIP MC144110DW SOG Package MC144111P Plastic DIP MC144111DW SOG Package The MC144110 and MC144111 are low-cost 6-bit D/A converters with serial interface ports to provide communication with CMOS microprocessors and microcomputers. The MC144110 contains six static D/A converters; the MC144111 contains four converters. Due to a unique feature of these DACs, the user is permitted easy scaling of the analog outputs of a system. Over a 5 to 15 V supply range, these DACs may be directly interfaced to CMOS MPUs operating at 5 V. MC144110 3-22 * Direct R-2R Network Outputs * Buffered Emitter-Follower Outputs * Serial Data Input * Digital Data Output Facilitates Cascading * Direct Interface to CMOS P * Wide Operating Voltage Range: 4.5 to 15 V * Wide Operating Temperature Range: 0 to 855C * Software Information is Contained in Document M68HC11RM/AD MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Technical Data Rev. 0, 02/2003 MC145026 Encoder and Decoder Pairs These devices are not recommended for New Design. For the complete data sheet please visit our website at http://www.motorola.com/semiconductors Ordering Information Device Package MC145026P Plastic DIP MC145026D SOG Package MC145027P Plastic DIP MC145027DW SOG Package MC145028P Plastic DIP MC145028DW SOG Package These devices are designed to be used as encoder/decoder pairs in remote control applications. The MC145026 encodes nine lines of information and serially sends this information upon receipt of a transmit enable (TE) signal. The nine lines may be encoded with trinary data (low, high, or open) or binary data (low or high). The words are transmitted twice per encoding sequence to increase security. The MC145027 decoder receives the serial stream and interprets five of the trinary digits as an address code. Thus, 243 addresses are possible. If binary data is used at the encoder, 32 addresses are possible. The remaining serial information is interpreted as four bits of binary data. The valid transmission (VT) output goes high on the MC145027 when two conditions are met. First, two addresses must be consecutively received (in one encoding sequence) which both match the local address. Second, the 4 bits of data must match the last valid data received. The active VT indicates that the information at the Data output pins has been updated. The MC145028 decoder treats all nine trinary digits as an address which allows 19,683 codes. If binary data is encoded, 512 codes are possible. The VT output goes high on the MC145028 when two addresses are consecutively received (in one encoding sequence) which both match the local address. * Operating Temperature Range: - 40 to + 85C * Very-Low Standby Current for the Encoder: 300 nA Maximum @ 25C * Interfaces with RF, Ultrasonic, or Infrared Modulators and Demodulators * C Oscillator, No Crystal Required * igh External Component Tolerance; Can Use 5% Components MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145026 3-23 MC145026 3-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Four Frequency Synthesis - Data Sheets Device Number Page Number PLL Synthesizers Single MC145151-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MC145152-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MC145157-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MC145158-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 MC145170-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 4-1 4-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Technical Data Rev. 0, 02/2003 MC145151-2 PLL Frequency Synthesizer Family These devices are not recommended for New Design. For the complete data sheet please visit our website at http://www.motorola.com/semiconductors Ordering Information Device Package MC145151P2 Plastic DIP MC145151DW2 SOG Package MC145152P2 Plastic DIP MC145152DW2 SOG Package MC145157P2 Plastic DIP MC145157DW2 SOG Package MC145158P2 Plastic DIP MC145158DW2 SOG Package The devices described in this document are typically used as low-power, phase-locked loop frequency synthesizers. When combined with an external low-pass filter and voltagecontrolled oscillator, these devices can provide all the remaining functions for a PLL frequency synthesizer operating up to the device's frequency limit. For higher VCO frequency operation, a down mixer or a prescaler can be used between the VCO and the synthesizer IC. These frequency synthesizer chips can be found in the following and other applications: * CATV * TV Tuning * AM/FM Radios * Scanning Receivers * Two-Way Radios * Amateur Radio MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145151-2 4-3 Technical Data MC145170-2/D Rev. 4, 02/2003 MC145170-2 PLL Frequency Synthesizer with Serial Interface P SUFFIX CASE 648 D SUFFIX CASE 751B DT SUFFIX CASE 948C Ordering Information Device Operating Temp Range Plastic DIP MC145170P2 MC145170D2 MC145170DT2 Package TA = -40 to 85C SOG-16 TSSOP-16 1 Introduction The new MC145170-2 is pin-for-pin compatible with the MC145170-1. A comparison of the two parts is shown in the table below. The MC145170-2 is recommended for new designs and has a more robust power-on reset (POR) circuit that is more responsive to momentary power supply interruptions. The two devices are actually the same chip with mask options for the POR circuit. The more robust POR circuit draws approximately 20 A additional supply current. Note that the maximum specification of 100 A quiescent supply current has not changed. The MC145170-2 is a single-chip synthesizer capable of direct usage in the MF, HF, and VHF bands. A special architecture makes this PLL easy to program. Either a bit- or byteoriented format may be used. Due to the patented BitGrabber registers, no address/steering bits are required for random access of the three registers. Thus, tuning can be accomplished via a 2-byte serial transfer to the 16-bit N register. The device features fully programmable R and N counters, an amplifier at the fin pin, on-chip support of an external crystal, a programmable reference output, and both single- and doubleended phase detectors with linear transfer functions (no dead zones). A configuration (C) register allows the part to be configured to meet various applications. A patented feature allows the C register to shut off unused outputs, thereby minimizing noise and interference. In order to reduce lock times and prevent erroneous data from being loaded into the counters, a patented jam-load feature is included. Whenever a new divide ratio is loaded into the N register, both the N and R counters are jam-loaded with their respective values and begin counting down together. The phase detectors are also initialized during the jam load. * MC145170-2 4-4 Operating Voltage Range: 2.7 to 5.5 V MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Introduction * Maximum Operating Frequency: 185 MHz @ Vin = 500 mVpp, 4.5 V Minimum Supply 100 MHz @ Vin = 500 mVpp, 3.0 V Minimum Supply * Operating Supply Current: 0.6 mA @ 3.0 V, 30 MHz 1.5 mA @ 3.0 V, 100 MHz 3.0 mA @ 5.0 V, 50 MHz 5.8 mA @ 5.0 V, 185 MHz * Operating Temperature Range: -40 to 85C * R Counter Division Range: 1 and 5 to 32,767 * N Counter Division Range: 40 to 65,535 * Direct Interface to Motorola SPI Serial Data Port * See Application Notes AN1207/D and AN1671/D * Contact Motorola for MC145170 control software. Table 1. Comparision of the PLL Frequency Synthesizers Parameter Minimum Supply Voltage Maximum Input Current, fin Dynamic Characteristics, fin (Figure 26) Power-On Reset Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 MC145170-1 2.7 V 2.5 V 150 A 120 A Unchanged - Improved - MC145170-2 4-5 Electrical Characteristics 1 OSCin OSCout OSC 3 4-Stage Reference Divider 9 fR Control 15-stage R Counter 2 fR 15 REFout 3 BitGrabber R Register 15 Bits 11 Lock Detector and Control LD 7 CLK 5 Din 8 Dout Shift Register And Control Logic 16 BitGrabber C Register 8 Bits Phase/Frequency Detector A and Control 13 PDout POR ENB 6 BitGrabber N Register 16 Bits 14 Phase/Frequency Detector B and Control 15 16 10 fV Control fin 4 Input AMP fR fV fV Pin 16 = VDD Pin 12 = VSS 16-Stage N Counter This device contains 4,800 active transistors. Figure 1. Block Diagram 2 Electrical Characteristics Table 2. Maximum Ratings (Voltages Referenced to VSS) Parameter Symbol Value Unit DC Supply Voltage VDD -0.5 to 5.5 V DC Input Voltage Vin -0.5 to VDD + 0.5 V DC Output Voltage Vout -0.5 to VDD + 0.5 V DC Input Current, per Pin Iin 10 mA DC Output Current, per Pin Iout 20 mA DC Supply Current, VDD and VSS Pins IDD 30 mA Power Dissipation, per Package PD 300 mW Storage Temperature Tstg -65 to 150 C TL 260 C Lead Temperature, 1 mm from Case for 10 seconds NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. 2. ESD data available upon request. MC145170-2 4-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics Table 3. Electrical Characteristics Parameter (Voltages Referenced to VSS, TA = -40 to 85C) Test Condition Power Supply Voltage Range Maximum Low-Level Input Voltage [Note 1] (Din, CLK, ENB, fin) dc Coupling to fin Minimum High-Level Input Voltage [Note 1] (Din, CLK, ENB, fin) dc Coupling to fin Minimum Hysteresis Voltage (CLK, ENB) Symbol VDD V Guaranteed Limit Unit VDD - 2.7 to 5.5 V VIL 2.7 4.5 5.5 0.54 1.35 1.65 V VIH 2.7 4.5 5.5 2.16 3.15 3.85 V VHys 2.7 5.5 0.15 0.20 V Maximum Low-Level Output Voltage (Any Output) Iout = 20 A VOL 2.7 5.5 0.1 0.1 V Minimum High-Level Output Voltage (Any Output) Iout = - 20 A VOH 2.7 5.5 2.6 5.4 V Minimum Low-Level Output Current (PDout, REFout, fR, fV, LD, R, V) Vout = 0.3 V Vout = 0.4 V Vout = 0.5 V IOL 2.7 4.5 5.5 0.12 0.36 0.36 mA Minimum High-Level Output Current (PDout, REFout, fR, fV, LD, R, V) Vout = 2.4 V Vout = 4.1 V Vout = 5.0 V IOH 2.7 4.5 5.5 -0.12 -0.36 -0.36 mA Minimum Low-Level Output Current (Dout) Vout = 0.4 V IOL 4.5 1.6 mA Minimum High-Level Output Current (Dout) Vout = 4.1 V IOH 4.5 -1.6 mA Maximum Input Leakage Current (Din, CLK, ENB, OSCin) Vin = VDD or VSS Iin 5.5 1.0 A Maximum Input Current (fin) Vin = VDD or VSS Iin 5.5 150 A Maximum Output Leakage Current (PDout) (Dout) Vin = VDD or VSS, Output in High-Impedance State 5.5 5.5 100 5.0 nA A 5.5 100 A Maximum Quiescent Supply Current Vin = VDD or VSS; Outputs Open; Excluding fin Amp Input Current Component IOZ IDD NOTES: 1. When dc coupling to the OSCin pin is used, the pin must be driven rail-to-rail. In this case, OSC out should be floated. 2. The nominal values at 3.0 V are 0.6 mA @ 30 MHz, and 1.5 mA @ 100 MHz. The nominal values at 5.0 V are 3.0 mA @ 50 MHz, and 5.8 mA @ 185 MHz. These are not guaranteed limits. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-7 Electrical Characteristics Table 3. Electrical Characteristics (Continued) (Voltages Referenced to VSS, TA = -40 to 85C) Parameter Test Condition Maximum Operating Supply Current fin = 500 mVpp; OSCin = 1.0 MHz @ 1.0 Vpp; LD, fR, fV, REFout = Inactive and No Connect; OSCout, V, R, PDout = No Connect; Din, ENB, CLK = VDD or VSS Symbol VDD V Guaranteed Limit Unit Idd - [Note 2] mA NOTES: 1. When dc coupling to the OSCin pin is used, the pin must be driven rail-to-rail. In this case, OSC out should be floated. 2. The nominal values at 3.0 V are 0.6 mA @ 30 MHz, and 1.5 mA @ 100 MHz. The nominal values at 5.0 V are 3.0 mA @ 50 MHz, and 5.8 mA @ 185 MHz. These are not guaranteed limits. Table 4. AC Interface Characteristics ( TA = -40 to 85C, CL = 50 pF, Input tr = tf = 10 ns, unless otherwise noted.) Parameter Serial Data Clock Frequency (Note: Refer to Clock tw Below) Symbol Figure No. VDD V Guaranteed Limit fclk 2 2.7 4.5 5.5 dc to 3.0 dc to 4.0 dc to 4.0 MHz tPLH, tPHL 2, 6 2.7 4.5 5.5 150 85 85 ns tPLZ, tPHZ 3, 7 2.7 4.5 5.5 300 200 200 ns tPZL, tPZH 3, 7 2.7 4.5 5.5 0 to 200 0 to 100 0 to 100 ns tTLH, tTHL 2, 6 2.7 4.5 5.5 150 50 50 ns 2, 6 2.7 4.5 5.5 900 150 150 ns Maximum Propagation Delay, CLK to Dout Maximum Disable Time, Dout Active to High Impedance Access Time, Dout High Impedance to Active Maximum Output Transition Time, Dout CL = 50 pF CL = 200 pF Unit Maximum Input Capacitance - Din, ENB, CLK Cin - 10 pF Maximum Output Capacitance - Dout Cout - 10 pF MC145170-2 4-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics Table 5. Timing Requirements (TA = -40 to 85C, Input tr = tf = 10 ns, unless otherwise noted.) Parameter Symbol Figure No. VDD V Guaranteed Limit tsu, th 4 2.7 4.5 5.5 55 40 40 ns tsu, th, trec 5 2.7 4.5 5.5 135 100 100 ns tw(H) 5 2.7 4.5 5.5 400 300 300 ns tw 2 2.7 4.5 5.5 166 125 125 ns t r, t f 2 2.7 4.5 5.5 100 100 100 s Minimum Setup and Hold Times, Din vs CLK Minimum Setup, Hold, and Recovery Times, ENB vs CLK Minimum Inactive-High Pulse Width, ENB Minimum Pulse Width, CLK Maximum Input Rise and Fall Times, CLK MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Unit MC145170-2 4-9 Electrical Characteristics 2.1 Switching Waveforms tf VDD tr VDD 90% CLK 50% 10% tw Dout 1/fclk tPLH tPLZ 10% tPZH 90% 50% 10% Dout High Impedance 50% tPHL tTLH VSS tPZL VSS tw Dout ENB 50% tPHZ 90% 50% High Impedance Figure 3. tw(H) Valid VDD 50% ENB th tsu VSS CLK Figure 4. VDD VSS Last CLK Figure 5. Test Point Test Point 7.5 k CL* * Includes all probe and fixture capacitance. Figure 6. Test Circuit MC145170-2 4-10 trec 50% First CLK Device Under Test VSS th VDD 50% CLK VDD 50% VSS tsu VSS tTHL Figure 2. Din VDD Device Under Test CL* Connect to VDD when testing tPLZ AND tPZL. Connect to VSS when testing tPHZ and tPZH. *Includes all probe and fixture capacitance. Figure 7. Test Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Characteristics Table 6. Loop Specifications (TA = -40 to 85C) Parameter Test Condition Symbol Figure No. VDD V Guaranteed Range Unit Min Max f 8 2.7 3.0 4.5 5.5 5.0 5.0 25 45 80 100 185 185 MHz Input Frequency, fin [Note} Vin 500 mVpp Sine Wave, N Counter Set to Divide Ratio Such that fV 2.0 MHz f 9 2.7 3.0 4.5 5.5 1.0* 1.0* 1.0* 1.0* 22 25 30 35 MHz Input Frequency, OSCin Externally Driven with ac-coupled Signal Vin 1.0 Vpp Sine Wave, OSCout = No Connect, R Counter Set to Divide Ratio Such that fR 2 MHz C1 30 pF C2 30 pF Includes Stray Capacitance fXTAL 11 2.7 3.0 4.5 5.5 2.0 2.0 2.0 2.0 12 12 15 15 MHz Crystal Frequency, OSCin and OSCout Output Frequency, REFout fout 12, 14 2.7 4.5 5.5 dc dc dc 10 10 MHz CL = 30 pF 2.7 4.5 5.5 dc dc dc 2.0 2.0 MHz Operating Frequency of the Phase Detectors f Output Pulse Width, R, V, and LD fR in Phase with fV CL = 50 pF Output Transition Times, R, V, LD, fR, and fV CL = 50 pF Input Capacitance fin OSCin tw 13, 14 2.7 4.5 5.5 20 16 100 90 ns tTLH, tTHL 13, 14 2.7 4.5 5.5 - 65 60 ns Cin - - - 7.0 7.0 pF * IF lower frequency is desired, use wave shaping or higher amplitude sinusoidal signal in ac-coupled case. Also, see Figure 25 for dc coupling. 100 pF Sine Wave Generator fin Vin fV Test Point MC145170-2 50 * VSS VDD V+ *Characteristic impedance Figure 8. Test Circuit, fin MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-11 Electrical Characteristics V+ 0.01 F Sine Wave Generator OSCin 5.0 M 50 fR Test Point 1.0 M MC145170-2 Vin Sine Wave Generator OSCout VSS VDD 0.01 F Vin V+ OSCin 1.0 M fR MC145170-2 OSCout 50 VSS VDD No Connect Figure 9. Test Circuit, OSC Circuitry Externally Driven [Note] Test Point V+ Figure 10. Circuit to Eliminate Self-Oscillation, OSC Circuitry Externally Driven [Note] NOTE: Use the circuit of Figure 10 to eliminate self-oscillation of the OSCin pin when the MC145170-2 has power applied with no external signal applied at Vin. (Self-oscillation is not harmful to the MC145170-2 and does not damage the IC.) C1 OSCin MC145170-2 REFout C2 OSCout VSS 1/f REFout Test Point REFout VDD 50% V+ Figure 11. Test Circuit, OSC Circuit with Crystal Figure 12. Test Circuit Test Point Output tw 50% Output 90% 10% tTHL tTLH Device Under Test CL* *Includes all probe and fixture capacitance. Figure 13. Switching Waveform MC145170-2 4-12 Figure 14. Test Load Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Pin Connections 3 Pin Connections 3.1 Digital Interface Pins Din Serial Data Input (Pin 5) The bit stream begins with the most significant bit (MSB) and is shifted in on the low-to-high transition of CLK. The bit pattern is 1 byte (8 bits) long to access the C or configuration register, 2 bytes (16 bits) to access the N register, or 3 bytes (24 bits) to access the R register. Additionally, the R register can be accessed with a 15-bit transfer (see Table 7). An optional pattern which resets the device is shown in Figure 15. The values in the C, N, and R registers do not change during shifting because the transfer of data to the registers is controlled by ENB. The bit stream needs neither address nor steering bits due to the innovative BitGrabber registers. Therefore, all bits in the stream are available to be data for the three registers. Random access of any register is provided (i.e., the registers may be accessed in any sequence). Data is retained in the registers over a supply range of 2.7 to 5.5 V. The formats are shown in Figures 15, 16, 17, and 18. Din typically switches near 50% of VDD to maximize noise immunity. This input can be directly interfaced to CMOS devices with outputs guaranteed to switch near rail-to-rail. When interfacing to NMOS or TTL devices, either a level shifter (MC74HC14A, MC14504B) or pull-up resistor of 1 to 10 k must be used. Parameters to consider when sizing the resistor are worst-case IOL of the driving device, maximum tolerable power consumption, and maximum data rate. Table 7. Register Access (MSBs are shifted in first, C0, N0, and R0 are the LSBs) Number of Clocks Accessed Register Bit Nomenclature 9 to 13 8 16 15 or 24 Other Values 32 Values > 32 See Figure 15 C Register N Register R Register None See Figures 27 to 34 (Reset) C7, C6, C5, ..., C0 N15, N14, N13, ..., N0 R14, R13, R12, ..., R0 CLK Serial Data Clock Input (Pin 7) Low-to-high transitions on Clock shift bits available at Din, while high-to-low transitions shift bits from Dout. The chip's 16-1/2-stage shift register is static, allowing clock rates down to dc in a continuous or intermittent mode. Four to eight clock cycles followed by five clock cycles are needed to reset the device; this is optional. Eight clock cycles are required to access the C register. Sixteen clock cycles are needed for the N register. Either 15 or 24 cycles can be used to access the R register (see Table 7 and Figures 15, 16, 17, and 18). For cascaded devices, see Figures 27 to 34. CLK typically switches near 50% of VDD and has a Schmitt-triggered input buffer. Slow CLK rise and fall times are allowed. See the last paragraph of Din for more information. NOTE: To guarantee proper operation of the power-on reset (POR) circuit, the CLK pin must be held at the potential of either the VSS or VDD pin during power up. That is, the CLK input should not be floated or toggled while the VDD pin is ramping from 0 to at least 2.7 V. If control of the CLK pin is not practical during power up, the initialization sequence shown in Figure 15 must be used. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-13 Pin Connections ENB Active-Low Enable Input (Pin 6) This pin is used to activate the serial interface to allow the transfer of data to/from the device. When ENB is in an inactive high state, shifting is inhibited, Dout is forced to the high-impedance state, and the port is held in the initialized state. To transfer data to the device, ENB (which must start inactive high) is taken low, a serial transfer is made via Din and CLK, and ENB is taken back high. The low-to-high transition on ENB transfers data to the C, N, or R register depending on the data stream length per Table 7. NOTE: Transitions on ENB must not be attempted while CLK is high. This puts the device out of synchronization with the microcontroller. Resynchronization occurs when ENB is high and CLK is low. This input is also Schmitt-triggered and switches near 50% of VDD, thereby minimizing the chance of loading erroneous data into the registers. See the last paragraph of Din for more information. Dout Three-State Serial Data Output (Pin 8) Data is transferred out of the 16-1/2-stage shift register through Dout on the high-to-low transition of CLK. This output is a No Connect, unless used in one of the manners discussed below. Dout could be fed back to an MCU/MPU to perform a wrap-around test of serial data. This could be part of a system check conducted at power up to test the integrity of the system's processor, PC board traces, solder joints, etc. The pin could be monitored at an in-line QA test during board manufacturing. Finally, Dout facilitates troubleshooting a system and permits cascading devices. 3.2 Reference Pins OSCin /OSCout Reference Oscillator Input/Output (Pins 1, 2) These pins form a reference oscillator when connected to terminals of an external parallel-resonant crystal. Frequency-setting capacitors of appropriate values as recommended by the crystal supplier are connected from each pin to ground (up to a maximum of 30 pF each, including stray capacitance). An external feedback resistor of 1.0 to 5.0 M is connected directly across the pins to ensure linear operation of the amplifier. The required connections for the components are shown in Figure 11. 5 M is required across the OSCin and OSCout pins in the ac-coupled case (see Figure 9 or alternate circuit Figure 10). OSCout is an internal node on the device and should not be used to drive any loads (i.e., OSCout is unbuffered). However, the buffered REFout is available to drive external loads. The external signal level must be at least 1 Vpp; the maximum frequencies are given in the Loop Specifications table. These maximum frequencies apply for R Counter divide ratios as indicated in the table. For very small ratios, the maximum frequency is limited to the divide ratio times 2 MHz. (Reason: the phase/frequency detectors are limited to a maximum input frequency of 2 MHz.) If an external source is available which swings virtually rail-to-rail (VDD to VSS), then dc coupling can be used. In the dc-coupled case, no external feedback resistor is needed. OSCout must be a No Connect to avoid loading an internal node on the device, as noted above. For frequencies below 1 MHz, dc coupling must be used. The R counter is a static counter and may be operated down to dc. However, wave shaping by a CMOS buffer may be required to ensure fast rise and fall times into the OSCin pin. See Figure 25. Each rising edge on the OSCin pin causes the R counter to decrement by one. MC145170-2 4-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Pin Connections REFout Reference Frequency Output (Pin 3) This output is the buffered output of the crystal-generated reference frequency or externally provided reference source. This output may be enabled, disabled, or scaled via bits in the C register (see Figure 16). REFout can be used to drive a microprocessor clock input, thereby saving a crystal. Upon power up, the onchip power-on-initialize circuit forces REFout to the OSCin divided-by-8 mode. REFout is capable of operation to 10 MHz; see the Loop Specifications table. Therefore, divide values for the reference divider are restricted to two or higher for OSCin frequencies above 10 MHz. If unused, the pin should be floated and should be disabled via the C register to minimize dynamic power consumption and electromagnetic interference (EMI). 3.3 Counter Output Pins fR R Counter Output (Pin 9) This signal is the buffered output of the 15-stage R counter. fR can be enabled or disabled via the C register (patented). The output is disabled (static low logic level) upon power up. If unused, the output should be left disabled and unconnected to minimize interference with external circuitry. The fR signal can be used to verify the R counter's divide ratio. This ratio extends from 5 to 32,767 and is determined by the binary value loaded into the R register. Also, direct access to the phase detector via the OSCin pin is allowed by choosing a divide value of 1 (see Figure 17). The maximum frequency which the phase detectors operate is 2 MHz. Therefore, the frequency of fR must not exceed 2 MHz. When activated, the fR signal appears as normally low and pulses high. The pulse width is 4.5 cycles of the OSCin pin signal, except when a divide ratio of 1 is selected. When 1 is selected, the OSCin signal is buffered and appears at the fR pin. fV N Counter Output (Pin 10) This signal is the buffered output of the 16-stage N counter. fV can be enabled or disabled via the C register (patented). The output is disabled (static low logic level) upon power up. If unused, the output should be left disabled and unconnected to minimize interference with external circuitry. The fV signal can be used to verify the N counter's divide ratio. This ratio extends from 40 to 65,535 and is determined by the binary value loaded into the N register. The maximum frequency which the phase detectors operate is 2 MHz. Therefore, the frequency of fV must not exceed 2 MHz. When activated, the fV signal appears as normally low and pulses high. 3.4 Loop Pins fin Frequency Input (Pin 4) This pin is a frequency input from the VCO. This pin feeds the on-chip amplifier which drives the N counter. This signal is normally sourced from an external voltage-controlled oscillator (VCO), and is accoupled into fin. A 100 pF coupling capacitor is used for measurement purposes and is the minimum size recommended for applications (see Figure 25). The frequency capability of this input is dependent on the supply voltage as listed in Table 6, Loop Specifications. For small divide ratios, the maximum frequency is limited to the divide ratio times 2 MHz. (Reason: the phase/frequency detectors are limited to a maximum frequency of 2 MHz.) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-15 Pin Connections For signals which swing from at least the VIL to VIH levels listed in the Electrical Characteristics table, dc coupling may be used. Also, for low frequency signals (less than the minimum frequencies shown in the Loop Specifications table), dc coupling is a requirement. The N counter is a static counter and may be operated down to dc. However, wave shaping by a CMOS buffer may be required to ensure fast rise and fall times into the fin pin. See Figure 25. Each rising edge on the fin pin causes the N counter to decrement by 1. PDout Single-Ended Phase/Frequency Detector Output (Pin 13) This is a three-state output for use as a loop error signal when combined with an external low-pass filter. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear transfer function. The operation of the phase/ frequency detector is described below and is shown in Figure 19. POL bit (C7) in the C register = low (see Figure 16) Frequency of fV > fR or Phase of fV Leading fR: negative pulses from high impedance Frequency of fV < fR or Phase of fV Lagging fR: positive pulses from high impedance Frequency and Phase of fV = fR: essentially high-impedance state; voltage at pin determined by loop filter POL bit (C7) = high Frequency of fV > fR or Phase of fV Leading fR: positive pulses from high impedance Frequency of fV < fR or Phase of fV Lagging fR: negative pulses from high impedance Frequency and Phase of fV = fR: essentially high-impedance state; voltage at pin determined by loop filter This output can be enabled, disabled, and inverted via the C register. If desired, PDout can be forced to the high-impedance state by utilization of the disable feature in the C register (patented). R and V Double-Ended Phase/Frequency Detector Outputs (Pins 14, 15) These outputs can be combined externally to generate a loop error signal. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear transfer function. The operation of the phase/frequency detector is described below and is shown in Figure 19. POL bit (C7) in the C register = low (see Figure 16) Frequency of fV > fR or Phase of fV Leading fR: V = negative pulses, R = essentially high Frequency of fV < fR or Phase of fV Lagging fR: V = essentially high, R = negative pulses Frequency and Phase of fV = fR: V and R remain essentially high, except for a small minimum time period when both pulse low in phase POL bit (C7) = high Frequency of fV > fR or Phase of fV Leading fR: R = negative pulses, V = essentially high Frequency of fV < fR or Phase of fV Lagging fR: R = essentially high, V = negative pulses Frequency and Phase of fV = fR: V and R remain essentially high, except for a small minimum time period when both pulse low in phase These outputs can be enabled, disabled, and interchanged via the C register (patented). MC145170-2 4-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Pin Connections LD Lock Detector Output (Pin 11) This output is essentially at a high level with narrow low-going pulses when the loop is locked (fR and fV of the same phase and frequency). The output pulses low when fV and fR are out of phase or different frequencies (see Figure 19). This output can be enabled and disabled via the C register (patented). Upon power up, on-chip initialization circuitry disables LD to a static low logic level to prevent a false "lock" signal. If unused, LD should be disabled and left open. 3.5 Power Supply VDD Most Positive Supply Potential (Pin 16) This pin may range from 2.7 to 5.5 V with respect to VSS. For optimum performance, VDD should be bypassed to VSS using low-inductance capacitor(s) mounted very close to the device. Lead lengths on the capacitor(s) should be minimized. (The very fast switching speed of the device causes current spikes on the power leads.) VSS Most Negative Supply Potential (Pin 12) This pin is usually ground. For measurement purposes, the VSS pin is tied to a ground plane. Power Up ENB CLK 1 2 3 1 2 3 4 5 One Zero 4 or More Clocks Din Don't Cares Zeroes Don't Cares NOTE: This initialization sequence is usually not necessary because the on-chip power-on reset circuit performs the initialization function. However, this initialization sequence must be used immediately after power up if control of the CLK pin is not possible. That is, if CLK (Pin 7) toggles or floats upon power up, use the above sequence to reset the device. Also, use this sequence if power is momentarily interrupted such that the supply voltage to the device is reduced to below 2.7 V, but not down to at least 1 V (for example, the supply drops down to 2 V). This is necessary because the on-chip power-on reset is only activated when the supply ramps up from a voltage below approximately 1.0 V. Figure 15. Reset Sequence MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-17 Pin Connections ENB 1 CLK 2 3 4 5 6 7 MSB Din C7 8 * LSB C6 C5 C4 C3 C2 C1 C0 * At this point, the new byte is transferred to the C register and stored. No other registers are affected. C7 - POL: Select the output polarity of the phase/frequency detectors. When set high, this bit inverts PDout and interchanges the R function with V as depicted in Figure 19. Also see the phase detector output pin descriptions for more information. This bit is cleared low at power up. C6 - PDA/B: Selects which phase/frequency detector is to be used. When set high, enables the output of phase/frequency detector A (PDout) and disables phase/frequency detector B by forcing R and V to the static high state. When cleared low, phase/frequency detector B is enabled (R and V) and phase/frequency detector A is disabled with PDout forced to the high-impedance state. This bit is cleared low at power up. C5 - LDE: Enables the lock detector output when set high. When the bit is cleared low, the LD output is forced to a static low level. This bit is cleared low at power up. C4 - C2, OSC2 - OSC0: Reference output controls which determines the REFout characteristics as shown below. Upon power up, the bits are initialized such that OSCin/8 is selected. REFout Frequency C4 C3 C2 0 0 0 dc (Static Low) 0 0 1 OSCin 0 1 0 OSCin /2 0 1 1 OSCin /4 1 0 0 OSCin /8 (POR Default) 1 0 1 OSCin /16 1 1 0 OSCin /8 1 1 1 OSCin /16 C1 - fVE: Enables the fV output when set high. When cleared low, the fV output is forced to a static low level. The bit is cleared low upon power up. C0 - fRE: Enables the fR output when set high. When cleared low, the fR output is forced to a static low level. The bit is cleared low upon power up. Figure 16. C Register Access and Format (8 Clock Cycles are Used) MC145170-2 4-18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2 4 3 5 7 6 9 8 10 11 13 12 14 16 15 18 17 19 20 22 21 23 MSB Din X 24 * 1 CLK LSB X X X X X X X X R14 Don't Care Bits R13 R12 R11 R10 See Below R9 R8 R7 R6 See Below R5 R4 R3 See Below R2 R1 R0 See Below ENB 1 CLK 2 4 3 6 5 7 9 8 10 11 12 13 MSB Din R14 LSB R13 R12 R11 R10 0 0 0 0 0 0 0 0 . . . 7 7 0 0 0 0 0 0 0 0 . . . F F 0 0 0 0 0 0 0 0 . . . F F 0 1 2 3 4 5 6 7 . . . E F Hexadecimal Value R9 R8 R7 R6 R5 R4 R3 R2 R1 R0 Not Allowed R Counter = /1 (Direct Access to Reference Side of Phase/Frequency Detector) Not Allowed Not Allowed Not Allowed R Counter = /5 R Counter = /6 R Counter = /7 R Counter = /32,766 R Counter = /32,767 Decimal Equivalent * At this point, the new data is transferred to the R register and stored. No other registers are affected. Pin Connections Octal Value 15 14 * MC145170-2 4-19 Figure 17. R Register Access and Formats (Either 24 or 15 Clock Cycles Can Be Used) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ENB Pin Connections ENB CLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 MSB N15 Din * LSB N14 N13 N12 N11 N10 N9 0 0 0 0 . . . 0 0 0 0 0 0 0. . . F F N8 0 0 0 0 . . . 0 0 0 0 0 0 0. . . F F N7 0 0 0 0 . . . 2 2 2 2 2 2 2. . . F F 0 1 2 3 . . . 5 6 7 8 9 A B. . . E F Hexadecimal Value N6 N5 N4 N3 N2 N1 N0 Not Allowed Not Allowed Not Allowed Not Allowed Not Allowed Not Allowed Not Allowed N Counter = /40 N Counter = /41 N Counter = /42 N Counter = /43 N Counter = /65,534 N Counter = /65,535 Decimal Equivalent *At this point, the two new bytes are transferred to the N register and stored. No other registers are affected. In addition, the N and R counters are jam-loaded and begin counting down together. Figure 18. N Register Access and Format (16 Clock Cycles Are Used) fR Reference OSCin / R VH fV Feedback (fin / N VH PDout VL VL * VH High Impedance VL R V LD VH VL VH VL VH VL VH = High voltage level VL = Low voltage level *At this point, when both fR and fV are in phase, both the sinking and sourcing output FETs are turned on for a very short internal. NOTE: The PDout generates error pulses during out-of-lock conditions. When locked in phase and frequency, the output is high impedance and the voltage at that pin is determined by the low-pass filter capacitor. PDout, R and V are shown with the polarity bit (POL) = low; see Figure 16 for POL. Figure 19. Phase/Frequency Detector and Lock Detector Output Waveforms MC145170-2 4-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Design Considerations 4 Design Considerations 4.1 Crystal Oscillator Considerations The following options may be considered to provide a reference frequency to Motorola's CMOS frequency synthesizers. 4.1.1 Use of a Hybrid Crystal Oscillator Commercially available temperature-compensated crystal oscillators (TCXOs) or crystal-controlled data clock oscillators provide very stable reference frequencies. An oscillator capable of CMOS logic levels at the output may be direct or dc coupled to OSCin. If the oscillator does not have CMOS logic levels on the outputs, capacitive or ac coupling to OSCin may be used (see Figures 9 and 10). For additional information about TCXOs, visit motorola.com on the world wide web. 4.1.2 Use of the On-Chip Oscillator Circuitry The on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. A fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in Figure 20. The crystal should be specified for a loading capacitance (CL) which does not exceed 20 pF when used at the highest operating frequencies listed in Table 6, Loop Specifications. Larger CL values are possible for lower frequencies. Assuming R1 = 0 , the shunt load capacitance (CL) presented across the crystal can be estimated to be: C C in out C1 C2 C L = ----------------------------- + C a + C stray + ---------------------C in + C out C1 + C2 where Cin = 5.0 pF (see Figure 21) Cout = 6.0 pF (see Figure 21) Ca = 1.0 pF (see Figure 21) C1 and C2 = external capacitors (see Figure 21) Cstray = the total equivalent external circuit stray capacitance appearing across the crystal terminals The oscillator can be "trimmed" on-frequency by making a portion or all of C1 variable. The crystal and associated components must be located as close as possible to the OSCin and OSCout pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. Circuit stray capacitance can also be handled by adding the appropriate stray value to the values for Cin and Cout. For this approach, the term Cstray becomes 0 in the above expression for CL. A good design practice is to pick a small value for C1, such as 5 to 10 pF. Next, C2 is calculated. C1 < C2 results in a more robust circuit for start-up and is more tolerant of crystal parameter variations. Power is dissipated in the effective series resistance of the crystal, Re, in Figure 22. The maximum drive level specified by the crystal manufacturer represents the maximum stress that the crystal can withstand without damage or excessive shift in operating frequency. R1 in Figure 20. limits the drive level. The use of R1 is not necessary in most cases. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-21 Design Considerations To verify that the maximum dc supply voltage does not cause the crystal to be overdriven, monitor the output frequency at the REFout pin (OSCout is not used because loading impacts the oscillator). The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal decreases in frequency or becomes unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1. Through the process of supplying crystals for use with CMOS inverters, many crystal manufacturers have developed expertise in CMOS oscillator design with crystals. Discussions with such manufacturers can prove very helpful (see Table 8). Frequency Synthesizer OSCin OSCout Rf R1* C1 5.0 to 10 pF C2 * May be needed in certain cases. See text. Figure 20. Pierce Crystal Oscillator Circuit Ca OSCin Cin OSCout Cout Cstray Figure 21. Parasitic Capacitances of the Amplifier and Cstray 1 2 CS LS RS 1 2 CO 1 Re Xe 2 NOTE: Values are supplied by crystal manufacturer (parallel resonant crystal). Figure 22. Equivalent Crystal Networks MC145170-2 4-22 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Design Considerations Recommended Reading Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. E. Hafner, "The Piezoelectric Crystal Unit-Definitions and Method of Measurement", Proc. IEEE, Vol. 57, No. 2, Feb. 1969. D. Kemper, L. Rosine, "Quartz Crystals for Frequency Control", Electro-Technology, June 1969. P. J. Ottowitz, "A Guide to Crystal Selection", Electronic Design, May 1966. D. Babin, "Designing Crystal Oscillators", Machine Design, March 7, 1985. D. Babin, "Guidelines for Crystal Oscillator Design", Machine Design, April 25, 1985. Contact Motorola for MC145170-2 control software. Table 8. Partial List of Crystal Manufacturers CTS Corp. United States Crystal Corp. Crystek Crystal Statek Corp. Fox Electronics NOTE: MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of crystal manufacturers. MC145170-2 4-23 Design Considerations (A) PDout K K VCO ------------------------NR C 1 N n = -----------------------------2K K VCO VCO R1 C n = 1 F ( s ) = -------------------------R 1 sC + 1 (B) PDout VCO R1 n = R2 K K VCO -----------------------------------NC ( R + R ) 1 2 N = 0.5 R C + ------------------------- n 2 K K VCO C R sC + 1 2 F ( s ) = --------------------------------------------( R 1 + R 2 ) sC + 1 (C) R2 R V R1 + R1 R2 n = C A VCO MC33077 or equivalent (Note 3) C K K VCO ------------------------NCR 1 n R2 C = -------------------2 R 2 sC + 1 F ( s ) = -------------------------R sC 1 Notes: 1. For (C), R1 is frequently split into two series resistors; each resistor is equal to R1 divided by 2. A capacitor CC is then placed from the midpoint to ground to further filter the error pulses. The value of CC should be such that the corner frequency of this network does not significantly affect n. 2. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp. 3. For the latest information on MC33077 or equivalent, see the Motorola IC web site at http://www.motorola.com/semiconductors. Denifitions: N = Total Division Ratio in Feedback Loop K (Phase Detector Gain) = VDD/4p volts per radian for PDout K (Phase Detector Gain) - VDD/2p volts per radian for fV and fR 2fVCO K VCO ( VCO Gain ) = ------------------------V VCO For a nominal design starting point, the user might consider a damping factor = 0.7 and a natural loop frequency n = (2fR/50) where fR is the frequency at the phase detector input. Larger n values result in faster loop lock times and, for similar sideband filtering, higher fR-related VCO standards. Figure 23. Phase-Locked Loop - Low Pass Filter Design MC145170-2 4-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Design Considerations VHF Output Buffer VHF VCO Low-pass Filter V+ VDD 16 2 OSC out V 15 3 REF R 14 4 5 6 7 MCU fin Din MC145170-2 V+ 1 OSC in PDout Threshold Detector Optional (Note 5) 13 VSS 12 ENB LD 11 CLK fV 10 8 D out Optional Optional Loop Error Signals (Note 1) fR 9 Integrator (Note 4) NOTES: 1. The R and V outputs are fed to an external combiner/loop filter. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp used inthe combiner/loop filter. 2. For optimum performance, bypass the VDD pin to VSS (GND) with one or more low-inductance capacitors. 3. The R counter is programmed for a divide value = OSCin/fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = N, wher e N is the divide value of the N counter. 4. May be an R-C low-pass filter. 5. May be a bipolar transistor. Figure 24. Example Application MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-25 Design Considerations V+ VDD 14 A 1 2 C OSCin MC74HC14A B 3 No Connect MC145170-2 4 7 OSCout D fin VSS NOTE: The signals at Points A and B may be low-frequency sinusoidal or square waves with slow edge rates or noisy signal edges. At Points C and D, the signals are cleaned up, have sharp edge rates, and rail-to-rail signal swings. With signals as described at Points C and D, the MC145170-2 is guaranteed to operate down to a frequency as low as dc. Refer to the MC74HC14A data sheet for input switching levels and hysteresis voltage range. Figure 25. Low Frequency Operation Using DC Coupling MC145170-2 4-26 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Design Considerations f(Pin 4) in SOG Package 1 2 3 4 Marker Frequency (MHz) Resistance () Reactance () Capacitance (pF) 1 2 3 4 5 100 150 185 2390 39.2 25.8 42.6 -5900 -347 -237 -180 5.39 4.58 4.48 4.79 Figure 26. Input Impedance at fin - Series Format (R + jX) (5.0 MHz to 185 MHz) Device #1 MC145170-2 Din CLK ENB Device #2 MC145170-2 Dout Din CLK ENB Dout 33 k NOTE 1 CMOS MCU Optional NOTES: 1. The 33 k resistor is needed to prevent the Din pin from floating. (The Dout pin is a three-state output.) 2. See related Figures 28, 29, and 30. Figure 27. Cascading Two MC145170-2 Devices MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MC145170-2 4-27 MC145170-2 4-28 ENB Din 7 2 1 CLK X X X X 16 15 10 9 8 X X 23 18 17 C7 C0 C6 26 25 24 X 31 32 X X C7 39 34 33 NOTE 40 C6 C0 C Register Bits of Device #1 in Figure 27 C Register Bits of Device #2 in Figure 27 NOTE: At this point, the new data is transferred to the C registers of both devices and stored. No other registers are affected. Figure 28. Accessing the C Registers of Two Cascaded MC145170-2 Devices ENB Din 2 1 CLK X X 10 9 8 X X 25 26 R14 27 R13 31 30 R9 39 R1 40 R0 41 X 42 44 R14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA R Register Bits of Device #2 in Figure 27 45 48 R11 50 49 R7 R6 R Register Bits of Device #1 in Figure 27 NOTE: At this point, the new data is transferred to the R registers of both devices and stored. No other registers are affected. Figure 29. Accessing the R Registers of Two Cascaded MC145170-2 Devices 55 56 R0 NOTE MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ENB NOTE 1 CLK Din X 2 X 9 8 X 10 X 15 16 X 17 N15 23 24 N8 25 N7 31 32 N0 33 N15 N Register Bits of Device #2 in Figure 27 39 40 N8 41 N7 47 48 N0 N Register Bits of Device #1 in Figure 27 NOTE: At this point, the new data is transferred to the N registers of both devices and stored. No other registers are affected. Figure 30. Accessing the N Registers of Two Cascaded MC145170-2 Devices Design Considerations MC145170-2 4-29 Design Considerations V+ VPD VDD VDD Device #1 MC145170-2 Din CLK ENB VCC VPD Device #2 Note 2 Dout Din CLK ENB Output A (Dout) 33 k Note 1 CMOS MCU Optional NOTES: 1. The 33 k resistor is needed to prevent the Din pin from floating. (The Dout pin is a three-state output.) 2. This PLL Frequency Synthesizer may be a MC145190, MC145191, MC145192, MC145200, or MC145201. 3. See related Figures 32, 33, and 34. Figure 31. Cascading Two Different Device Types MC145170-2 4-30 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ENB Din 7 2 1 CLK X X X X 16 15 10 9 8 X X 17 C7 C6 C0 X X X C7 39 34 33 32 31 26 25 24 23 18 NOTE 40 C6 C0 C Register Bits of Device #1 in Figure 31 C Register Bits of Device #2 in Figure 31 NOTE: At this point, the new data is transferred to the C registers of both devices and stored. No other registers are affected. Figure 32. Accessing the C Registers of Two Different Device Types ENB NOTE CLK Din 2 1 X X 16 17 A23 18 A22 20 21 A19 22 A18 31 30 A9 A8 39 40 A0 41 X 42 43 R14 R13 46 47 R9 48 R8 R Register Bits of Device #1 in Figure 31 NOTE: At this point, the new data is transferred to the A register of Device #2 and R register of Device #1 and stored. No other registers are affected. MC145170-2 4-31 Figure 33. Accessing the A and R Registers of Two Different Device Types 55 56 R0 Design Considerations A Register Bits of Device #2 in Figure 31 32 MC145170-2 4-32 ENB Din 2 1 CLK X X 10 9 8 X X 15 16 X 17 R15 23 24 R8 25 R7 R Register Bits of Device #2 in Figure 31 31 32 R0 33 N15 39 40 N8 41 N7 N Register Bits of Device #1 in Figure 31 NOTE: At this point, the new data is transferred to the R register of Device #2 and N register of Device #1 and stored. No other registers are affected. Figure 34. Accessing the R and N Registers of Two Different Device Types 47 48 N0 NOTE MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Five Motorola RF Transistors - Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3 MRF9080LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF281SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-26 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF281ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-26 MRF9085R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF282SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-30 MRF9085SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF282ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-30 MRF9085LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-218 MRF284R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-37 MRF9100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-224 MRF284LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-37 MRF9100R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-224 MRF372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-46 MRF9100SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-224 MRF373AR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-57 MRF9120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-233 MRF373ALSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-57 MRF9120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-233 MRF374A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-62 MRF9130L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-241 MRF1511T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-72 MRF9130LR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-241 MRF1513T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-82 MRF9130LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-241 MRF1517T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-94 MRF9135L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-248 MRF1518T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-106 MRF9135LR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-248 MRF1535T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-118 MRF9135LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-248 MRF1535FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-118 MRF9180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-255 MRF1550T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-128 MRF9180S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-255 MRF1550FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-128 MRF18030AR3 ............................. 5-263 MRF1570T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-137 MRF18030ASR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-263 MRF1570FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-137 MRF18030BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-268 MRF6522-70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-151 MRF18030BSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-268 MRF6522-70R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-151 MRF18060A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF9002R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-158 MRF18060AR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF9030R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-165 MRF18060ALSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF9030LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-165 MRF18060ASR3 ............................ 5-273 MRF9030MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-172 MRF18060B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9030MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-172 MRF18060BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9045R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-180 MRF18060BLSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9045LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-180 MRF18060BSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9045MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-186 MRF18085A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-285 MRF9045MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-186 MRF18085AR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-285 MRF9060R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-194 MRF18085ALSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-285 MRF9060LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-194 MRF18085B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-290 MRF9060MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-202 MRF18085BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-290 MRF9060MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-202 MRF18085BLSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-290 MRF9080 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF18090A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-297 MRF9080R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF18090AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-297 MRF9080SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-210 MRF18090B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-303 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 5-1 Device Number Page Number Device Number Page Number MRF18090BS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-303 MRF21060SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-375 MRF19030R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-309 MRF21085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF19030SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-309 MRF21085R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF19045R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-314 MRF21085SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF19045SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-314 MRF21085LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-381 MRF19060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-321 MRF5S21090L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-389 MRF19060R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-321 MRF5S21090LR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-389 MRF19060SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-321 MRF5S21090LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-389 MRF19085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF21090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-396 MRF19085R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF21090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-396 MRF19085SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF21120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-401 MRF21125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-408 MRF19085LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-327 MRF19090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-335 MRF21125S ................................ 5-408 MRF21125SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-408 MRF19090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-335 MRF19090SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-335 MRF19120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-341 MRF19120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-341 MRF19125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-348 MRF19125S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-348 MRF19125SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-348 MRF5S21150S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF21010R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-356 MRF5S21150SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF21010LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-356 MRF5P21180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-429 MRF21030R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-362 MRF21180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-436 MRF21030SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-362 MRF21180S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-436 MRF21045R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-367 MRFG35003M6T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-444 MRF21045SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-367 MRFG35010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-451 MRF21060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-375 MRFG35010MT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-459 MRF21060R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-375 5-2 MRF5S21130 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF5S21130R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF5S21130S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF5S21130SR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-415 MRF5S21150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MRF5S21150R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-422 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor (Scale 2:1) Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola's 15 GHz f bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. * Low Noise Figure, NFmin = 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA * Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.0 mA * Output Third Order Intercept, OIP3 = 18 dBm (Typ) @ 2.0 V and 5.0 mA * Ultra small SOT-343 Surface Mount Package * Available Only in Tape and Reel Packaging Base 2 Emitter 1 3 Emitter 4 Collector Figure 1. Pin Connections MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-3 Electrical Specifications 1 Electrical Specifications Table 1. Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO 6.5 Vdc Collector-Base Voltage VCBO 8.0 Vdc Emitter-Base Voltage VEBO 3.0 Vdc PD(max) 0.188 2.5 W mW/C IC 20 mA TJ(max) 150 C Tstg -55 to 150 C Symbol Max Unit RJC 400 C/W Power Dissipation @ TC = 75C Derate Linearity above TC = 75C at Collector Current-Continuous Maximum Junction Temperature Storage Temperature NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 400 V and Machine Model (MM) 50 V. Additional ESD data available upon request. Table 2. Thermal Characteristic Characteristic Thermal Resistance, Junction-to-Case NOTES: To calculate the junction termpature use TJ = (PD x RJC) + TC. The case temperature measured on collector lead adjacent to the package body. Table 3. Electrical Characteristics Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) V(BR)CEO 6.5 7.5 - Vdc Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 8.0 12 - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 3.0 4.0 - Vdc Collector Cutoff Current (VCB = 7.0 V, IE = 0) ICBO - - 0.1 A Emitter Cutoff Current (VEB = 2.0 V, IC = 0) IEBO - - 0.1 A Base Cutoff Current (VCE = 5.0 V, IB = 0) ICEO - - 0.1 A hFE 100 - 200 - OFF Characteristic [Note 1] ON Characteristic [Note 1] DC Current Gain (VCE = 2.0 V, IC = 5.0 mA) MBC13900 5-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Electrical Specifications Table 3. Electrical Characteristics (Continued) Characteristic Symbol Min Typ Max Unit f - 15 - GHz 18.5 13.5 16.5 12.5 19.5 14.5 17.5 13.5 - Dynamic Characteristics Current Gain Bandwidth Product (VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz) Performance Characteristic Insertion Gain VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Maximum Stable Gain and/or Maximum Available Gain [Note 2] VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz |S21|2 dB MSG, MAG Minimum Noise Figure VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz NFmin Associated Gain at Minimum Noise Figure VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz GNF Output Third Order Intercept [Note 3] (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz) OIP3 dB 22 18 21 17.5 23 19 22 18.5 - - 0.8 0.9 0.8 0.9 0.9 1.1 0.9 1.1 - 22 16 21 15 - - 18 21 13.5 19 - dB dB dBm NOTES: 1. Pulse width 300 s, duty cycle 2% pulsed. 2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S 21 S 21 2 MAG = ---------- K K - 1 , if K > 1, MSG = ---------- , if K < 1 S S 12 12 3. Zin and Zout matched for optimum IP3. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-5 Typical Performance Characteristics 2 Typical Performance Characteristics 0.35 C, CAPACITANCE (pF) 0.3 Cob 0.25 0.2 0.15 Ccb 0.1 f = 1.0 MHz 0.05 0 0 1.0 0.5 1.5 2.5 2.0 3.0 VCB, REVERSE VOLTAGE (V) 3.5 4.0 Figure 2. Capacitance versus Voltage 162 hFE, DC CURRENT GAIN 160 3.0 V 158 156 154 2.0 V 152 150 148 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 3. hFE, DC Current Gain versus Collector Current f, GAIN BANDWIDTH PRODUCT (GHz) 16 14 3.0 V 12 2.0 V 10 8.0 6.0 f = 900 MHz 4.0 2.0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) Figure 4. Gain-Bandwidth Product versus Collector Current MBC13900 5-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA f, GAIN BANDWIDTH PRODUCT (GHz) Typical Performance Characteristics 16 14 3.0 V 2.0 V 12 10 8.0 6.0 f = 1.9 GHz 4.0 2.0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Figure 5. Gain-Bandwidth Product versus Collector Current 35 VCE = 2.0 V IC = 5.0 mA 30 MSG 25 20 |S21|2 15 MAG 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 f, FREQUENCY (GHz) MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Figure 6. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency 35 VCE = 3.0 V IC = 3.0 mA 30 25 MSG 20 15 |S21|2 MAG 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 f, FREQUENCY (GHz) Figure 7. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-7 MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Typical Performance Characteristics 26 MSG/MAG 900 MHz 24 22 20 |S21|2 900 MHz 18 MSG/MAG 1.9 GHz 16 |S21|2 1.9 GHz 14 12 10 VCE = 2.0 V 8.0 6.0 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Figure 8. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current 27 MSG/MAG 900 MHz 25 23 |S21|2 900 MHz 21 19 MSG/MAG 1.9 GHz 17 |S21|2 1.9 GHz 15 13 11 9.0 7.0 VCE = 3.0 V 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 9. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current 1.8 1.6 22 GNF 18 1.4 NFmin 14 1.2 10 1.0 VCE = 2.0 VIC = 5.0 mA 6.0 2.0 0.5 1.0 1.5 2.0 2.5 3.0 f, FREQUENCY (GHz) 3.5 0.8 NFmin, MINIMUM NOISE FIGURE (dB) GNF, ASSOCIATED GAIN (dB) 26 0.6 4.0 Figure 10. Minimum Noise Figure and Associated Gain versus Frequency MBC13900 5-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA GNF, ASSOCIATED GAIN (dB) 28 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0.5 1.8 1.6 NFmin GNF 1.4 1.2 1.0 VCE = 3.0 VIC = 3.0 mA 1.0 1.5 2.0 2.5 f, FREQUENCY (GHz) 3.0 0.8 NFmin, MINIMUM NOISE FIGURE (dB) Typical Performance Characteristics 0.6 4.0 3.5 Figure 11. Minimum Noise Figure and Associated Gain versus Frequency 24 GNF, ASSOCIATED GAIN (dB) 20 16 1.6 1.4 GNF 1.9 GHz 12 1.2 NFmin 1.9 GHz 8.0 4.0 0 NFmin 900 MHz 0 2.0 4.0 1.0 0.8 VCE = 2.0 V 6.0 8.0 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 NFmin, MINIMUM NOISE FIGURE (dB) 1.8 GNF 900 MHz 0.6 20 Figure 12. Minimum Noise Figure and Associated Gain versus Collector Current 1.8 22 1.6 GNF 900 MHz 18 1.4 GNF 1.9 GHz 14 10 1.2 1.0 NFmin 1.9 GHz 6.0 0.8 NFmin 900 MHz 2.0 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) VCE = 3.0 V 16 18 NFmin, MINIMUM NOISE FIGURE (dB) GNF, ASSOCIATED GAIN (dB) 26 0.6 20 Figure 13. Minimum Noise Figure and Associated Gain versus Collector Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-9 OIP3, OUTPUT INTERCEPT POINT (dBm) Typical Performance Characteristics 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 3.0 V 2.0 V f = 900 MHz 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 OIP3, OUTPUT INTERCEPT POINT (dBm) Figure 14. Output Third Order Intercept versus Collector Current 26 24 3.0 V 22 2.0 V 20 18 16 14 12 10 8.0 6.0 4.0 f = 1.9 GHz 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 15. Output Third Order Intercept versus Collector Current P1dB, 1dB COMPRESSION POINT (dBm) 14 10 3.0 V 6.0 2.0 V 2.0 -2.0 -6.0 f = 900 MHz -10 -14 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 16. One dB Compression Point versus Collector Current MBC13900 5-10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Typical Performance Characteristics P1dB, 1dB COMPRESSION POINT (dBm) 14 3.0 V 10 2.0 V 6.0 2.0 -2.0 -6.0 f = 1.9 GHz -10 -14 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 17. One dB Compression Point versus Collector Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-11 Applications Information 3 Applications Information A flexible applications board topology has been developed to demonstrate the performance of the MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples and assembly information are available from Motorola under part number KITMBC13900/D. 3.1 900 MHz LNA Figure 18 shows the schematic and Figure 19 shows the component placement for a 900 MHz LNA. The design goals for the circuit are: NF < 1.2 dB Gain > 19 dB Return Loss > 10 dB, input and output Unconditional stability from 100 MHz to 6 GHz. Typical performance that can be expected from this circuit at 3.0 and 3.5 V VCC is listed in Table 4. The component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device. VCC C1 R1 R2 C4 L4 C3 RF In R4 R5 L1 L2 R3 C 7 C2 RF Out Figure 18. 900 MHz LNA Schematic MBC13900 5-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information C1 Gnd VCC Component C1 C2 C3 C4 C5 C6 L1 L2 L3 R1 R2 R3 R4 R5 R6 Vias PCB R1 C5 R2 C3 C6 R6 L2 L1 R5 R4 C4 R3 C2 Value 1.0 F 3.3 pF 12 pF 0.01 F 1.0 F 0.3 pF 6.8 nH 5.6 nH <0.5 nH 133 49.9 k 16.5 0 3.9 0 FR4 Comments Optional Bypassing DC Block and S22 DC Block and S11 Broadband bypass Broadband bypass IIP3 improvement Toko LL1608-FS, match, bias Toko LL1608-FH, match, bias Emitter L on board (distance to GND vias) Bias Bias Stability, S22 Jumper Stability, S22 Jumper D = 15 mil r=4.5, h=25 mil, t=1.75 mil Figure 19. 900 MHz LNA Board Layout Table 4. Typical 900 MHz LNA Performance VCC IC (mA) NF (dB) 50 Insertion Gain (dB) Output IP3 (dBm) Input Return Loss (dB) Output Return Loss (dB) 3.0 5.0 1.2 19.7 15 10.1 10.2 3.5 6.1 1.21 20.2 17.6 10.8 10.8 3.2 1900 MHz LNA Figure Figure 20 shows the schematic and Figure 21 shows the component placement for a 1900 MHz LNA. The design goals for the circuit are: NF < 1.35 dB Gain > 14 dB Return Loss > 10 dB, input and output Unconditional stability from 100 MHz to 6 GHz. Typical performance that can be expected from this circuit at 3.0 V VCC and 5.0 mA is listed in Table 5. The component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3, C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-13 Applications Information VCC C1 R1 R2 C4 R5 L1 L2 C2 R3 L4 C3 RF In R4 RF Out C7 Figure 20. 1900 MHz LNA Schematic C1 Gnd VCC Component C1 C2 C3 C4 C5 C7 L1 L2 L3 L4 R1 R2 R3 R4 R5 Vias PCB R2 C4 C3 C6 R6 L2 L1 R5 R4 R1 C5 R3 C2 Value 1.0 F 22 pF 22 pF 0.01 F 1.0 F 0.6 pF 8.2 nH 3.3 nH <0.5 nH 1.2 nH 133 49.9 k 8.2 0 4.7 FR4 Comments Optional Bypassing DC Block and output match DC Block and input match RF and IM subharmonic short to ground RF and IM subharmonic short to ground Input match, RF / S11 compromise Bias decoupling, input match Output match, bias decoupling Emitter L on board (distance to GND vias) S11 Bias Bias Stability and S22 improvement Jumper Stability, Gain, S22 D = 15 mil r=4.5, h=25 mil, t=1.75 mil Figure 21. 1900 MHz LNA Board Layout Table 5. Typical 1900 MHz LNA Performance VCC IC (mA) NF (dB) 50 Insertion Gain (dB) Output IP3 (dBm) Input Return Loss (dB) Output Return Loss (dB) 3.0 5.0 1.28 14 19 10.4 10.7 3.5 6.1 1.29 14.4 20.2 10.8 11 MBC13900 5-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information Table 6. Common Emitter S-Parameters VCE (Vdc) IC (mA) f (MHz) 2.0 1.0 2.0 3.0 S11 S21 S12 S22 |S11| |S21| |S12| |S22| 0.1 0.973 -6 3.754 175 0.008 86 0.997 -3 0.5 0.961 -33 3.366 153 0.038 71 0.968 -12 0.9 0.895 -57 3.341 135 0.065 56 0.910 -22 1.0 0.868 -63 3.256 131 0.070 53 0.915 -24 1.5 0.766 -91 2.688 111 0.091 38 0.851 -33 1.9 0.721 -114 2.610 94 0.100 26 0.788 -39 2.0 0.706 -119 2.501 91 0.102 23 0.780 -41 2.4 0.649 -140 2.280 77 0.104 15 0.731 -47 3.0 0.628 -166 1.984 58 0.105 2 0.667 -56 3.5 0.606 173 1.717 45 0.099 -3 0.650 -62 4.0 0.606 155 1.478 33 0.094 -10 0.640 -68 4.5 0.611 138 1.421 21 0.089 -12 0.604 -74 5.0 0.610 122 1.309 9 0.085 -11 0.581 -81 0.1 0.948 -8 7.181 173 0.008 86 0.993 -4 0.5 0.907 -41 6.508 146 0.037 67 0.937 -15 0.9 0.796 -70 5.770 126 0.059 52 0.843 -27 1.0 0.763 -77 5.533 121 0.062 49 0.842 -29 1.5 0.638 -107 4.304 101 0.076 36 0.753 -37 1.9 0.585 -131 3.904 86 0.082 27 0.675 -42 2.0 0.571 -136 3.716 83 0.083 25 0.667 -44 2.4 0.532 -156 3.272 70 0.085 20 0.616 -48 3.0 0.520 179 2.745 53 0.087 13 0.554 -57 3.5 0.511 159 2.360 41 0.088 10 0.542 -62 4.0 0.518 143 2.046 30 0.088 7 0.530 -67 4.5 0.529 128 1.907 19 0.091 5 0.500 -72 5.0 0.536 114 1.747 8 0.096 5 0.474 -78 0.1 0.926 -10 10.121 172 0.008 84 0.990 -4 0.5 0.853 -48 8.944 141 0.035 65 0.906 -18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-15 Applications Information Table 6. Common Emitter S-Parameters (Continued) VCE (Vdc) IC (mA) 5.0 10 MBC13900 5-16 f (MHz) S11 S21 S12 S22 |S11| |S21| |S12| |S22| 0.9 0.716 -80 7.393 120 0.053 49 0.786 -30 1.0 0.680 -87 7.000 115 0.056 47 0.780 -31 1.5 0.556 -118 5.248 95 0.068 36 0.685 -38 1.9 0.507 -141 4.579 81 0.073 31 0.609 -43 2.0 0.497 -147 4.359 78 0.074 29 0.601 -44 2.4 0.472 -166 3.778 66 0.077 25 0.554 -48 3.0 0.468 170 3.120 51 0.082 21 0.495 -56 3.5 0.466 152 2.680 39 0.086 18 0.485 -61 4.0 0.476 137 2.333 28 0.091 15 0.476 -66 4.5 0.491 123 2.148 18 0.096 12 0.447 -70 5.0 0.503 109 1.963 8 0.104 11 0.423 -75 0.1 0.884 -13 15.377 170 0.007 83 0.982 -6 0.5 0.753 -59 12.586 134 0.032 61 0.846 -22 0.9 0.595 -94 9.434 111 0.046 49 0.699 -33 1.0 0.561 -102 8.786 106 0.048 47 0.689 -34 1.5 0.457 -134 6.309 88 0.058 39 0.596 -39 1.9 0.421 -156 5.291 75 0.064 36 0.531 -42 2.0 0.416 -161 5.033 72 0.065 36 0.525 -43 2.4 0.408 -178 4.295 62 0.072 34 0.485 -47 3.0 0.418 160 3.505 48 0.080 30 0.435 -54 3.5 0.424 143 3.012 37 0.088 26 0.426 -58 4.0 0.437 129 2.633 27 0.095 23 0.415 -63 4.5 0.454 116 2.394 17 0.104 19 0.393 -67 5.0 0.471 104 2.181 7 0.114 15 0.368 -72 0.1 0.785 -19 25.691 165 0.007 78 0.961 -8 0.5 0.575 -79 17.485 122 0.027 59 0.750 -28 0.9 0.438 -118 11.534 99 0.037 51 0.595 -35 1.0 0.421 -126 10.545 95 0.038 51 0.567 -35 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information Table 6. Common Emitter S-Parameters (Continued) VCE (Vdc) IC (mA) 15 20 S11 f (MHz) S21 S12 S22 |S11| |S21| |S12| |S22| 1.5 0.366 -156 7.311 80 0.050 48 0.500 -38 1.9 0.356 -176 5.901 69 0.058 46 0.454 -39 2.0 0.354 -180 5.625 67 0.060 46 0.449 -40 2.4 0.362 166 4.737 57 0.069 44 0.417 -43 3.0 0.392 148 3.842 45 0.082 38 0.372 -49 3.5 0.399 134 3.307 35 0.092 34 0.357 -54 4.0 0.414 120 2.907 25 0.103 29 0.345 -59 4.5 0.434 109 2.613 16 0.113 25 0.328 -65 5.0 0.453 98 2.374 6 0.124 18 0.307 -69 0.1 0.708 -25 32.559 161 0.007 83 0.938 -10 0.5 0.480 -94 19.200 115 0.024 58 0.679 -29 0.9 0.381 -133 11.991 94 0.033 54 0.538 -34 1.0 0.371 -141 10.889 90 0.035 54 0.515 -33 1.5 0.344 -169 7.466 76 0.047 53 0.460 -36 1.9 0.345 174 5.959 66 0.056 51 0.424 -37 2.0 0.345 170 5.683 64 0.059 50 0.420 -38 2.4 0.358 157 4.765 55 0.069 47 0.392 -41 3.0 0.392 142 3.852 43 0.084 42 0.349 -47 3.5 0.403 129 3.324 33 0.095 37 0.336 -52 4.0 0.418 116 2.924 24 0.105 31 0.323 -57 4.5 0.438 106 2.618 14 0.117 26 0.307 -63 5.0 0.460 95 2.375 5 0.128 20 0.288 -67 0.1 0.639 -31 37.220 158 0.007 75 0.919 -12 0.5 0.430 -107 19.608 110 0.022 58 0.629 -30 0.9 0.365 -146 11.885 91 0.032 58 0.504 -32 1.0 0.360 -153 10.741 87 0.034 58 0.483 -32 1.5 0.350 -178 7.337 73 0.047 55 0.438 -34 1.9 0.357 167 5.815 64 0.056 54 0.408 -35 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-17 Applications Information Table 6. Common Emitter S-Parameters (Continued) VCE (Vdc) 3.0 IC (mA) 1.0 2.0 MBC13900 5-18 f (MHz) S11 S21 S12 S22 |S11| |S21| |S12| |S22| 2.0 0.357 164 5.555 62 0.060 52 0.403 -36 2.4 0.371 152 4.641 53 0.069 49 0.378 -39 3.0 0.408 138 3.746 42 0.084 44 0.338 -45 3.5 0.419 126 3.239 32 0.096 39 0.323 -51 4.0 0.435 113 2.849 23 0.109 32 0.312 -56 4.5 0.453 104 2.545 13 0.119 27 0.295 -61 5.0 0.475 94 2.306 4 0.131 20 0.276 -66 0.1 0.970 -7 3.745 175 0.007 86 0.999 -3 0.5 0.949 -31 3.341 154 0.034 73 0.989 -12 0.9 0.892 -55 3.339 136 0.059 59 0.939 -21 1.0 0.878 -61 3.275 132 0.065 54 0.919 -23 1.5 0.778 -89 2.724 112 0.084 39 0.869 -31 1.9 0.730 -111 2.648 96 0.093 28 0.808 -37 2.0 0.714 -116 2.543 93 0.095 26 0.801 -39 2.4 0.652 -137 2.326 80 0.098 17 0.755 -44 3.0 0.634 -164 2.040 61 0.098 5 0.689 -53 3.5 0.604 175 1.765 48 0.093 -1 0.670 -60 4.0 0.599 157 1.521 35 0.091 -8 0.660 -66 4.5 0.604 140 1.466 23 0.084 -10 0.626 -73 5.0 0.602 124 1.348 12 0.080 -9 0.606 -79 0.1 0.951 -8 6.981 173 0.007 88 0.992 -3 0.5 0.913 -39 6.335 147 0.033 69 0.944 -14 0.9 0.807 -67 5.710 128 0.054 54 0.859 -25 1.0 0.774 -74 5.488 123 0.057 51 0.860 -27 1.5 0.647 -104 4.306 103 0.071 37 0.777 -35 1.9 0.591 -127 3.935 87 0.077 28 0.704 -40 2.0 0.576 -132 3.750 85 0.077 26 0.697 -42 2.4 0.531 -152 3.316 72 0.080 22 0.647 -47 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information Table 6. Common Emitter S-Parameters (Continued) VCE (Vdc) IC (mA) 3.0 5.0 S11 f (MHz) S21 S12 S22 |S11| |S21| |S12| |S22| 3.0 0.516 -178 2.790 55 0.082 14 0.584 -55 3.5 0.505 162 2.402 43 0.081 12 0.574 -60 4.0 0.508 146 2.078 32 0.083 8 0.563 -65 4.5 0.521 130 1.943 21 0.084 7 0.535 -70 5.0 0.526 115 1.782 10 0.089 7 0.511 -76 0.1 0.928 -9 10.077 172 0.007 84 0.991 -4 0.5 0.859 -46 8.948 142 0.032 66 0.917 -17 0.9 0.725 -77 7.487 121 0.049 51 0.806 -28 1.0 0.687 -84 7.105 116 0.052 50 0.803 -30 1.5 0.559 -115 5.356 97 0.063 38 0.711 -37 1.9 0.505 -138 4.701 82 0.067 31 0.638 -41 2.0 0.493 -143 4.473 79 0.068 31 0.631 -42 2.4 0.462 -162 3.886 68 0.072 27 0.585 -47 3.0 0.458 173 3.218 52 0.077 22 0.529 -54 3.5 0.452 154 2.763 41 0.082 20 0.518 -59 4.0 0.460 139 2.403 30 0.085 17 0.509 -64 4.5 0.476 125 2.216 20 0.090 14 0.483 -69 5.0 0.486 110 2.025 10 0.098 13 0.460 -74 0.1 0.884 -12 15.441 170 0.007 82 0.985 -5 0.5 0.756 -55 12.831 135 0.029 64 0.882 -22 0.9 0.598 -90 9.722 112 0.042 50 0.743 -31 1.0 0.570 -98 9.076 107 0.045 48 0.711 -32 1.5 0.458 -129 6.576 89 0.054 42 0.629 -38 1.9 0.415 -152 5.514 76 0.060 38 0.564 -40 2.0 0.408 -157 5.251 74 0.061 37 0.557 -41 2.4 0.395 -174 4.489 63 0.067 35 0.517 -45 3.0 0.407 163 3.680 49 0.076 31 0.464 -51 3.5 0.407 146 3.158 39 0.083 28 0.450 -56 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-19 Applications Information Table 6. Common Emitter S-Parameters (Continued) VCE (Vdc) IC (mA) 10 15 MBC13900 5-20 f (MHz) S11 S21 S12 S22 |S11| |S21| |S12| |S22| 4.0 0.417 131 2.768 29 0.090 25 0.438 -61 4.5 0.434 118 2.517 19 0.098 21 0.419 -67 5.0 0.450 105 2.294 9 0.108 17 0.398 -72 0.1 0.795 -18 25.574 165 0.007 79 0.970 -7 0.5 0.587 -74 17.871 123 0.025 60 0.780 -26 0.9 0.438 -112 11.957 101 0.034 54 0.631 -33 1.0 0.417 -119 10.950 97 0.036 52 0.602 -33 1.5 0.351 -150 7.620 81 0.047 50 0.536 -37 1.9 0.334 -171 6.171 70 0.054 47 0.490 -38 2.0 0.332 -175 5.878 68 0.056 47 0.485 -39 2.4 0.336 169 4.960 59 0.065 45 0.454 -42 3.0 0.363 151 4.029 46 0.076 40 0.408 -48 3.5 0.371 136 3.465 36 0.087 36 0.393 -53 4.0 0.385 122 3.048 27 0.097 31 0.383 -58 4.5 0.405 110 2.743 17 0.107 26 0.368 -63 5.0 0.425 99 2.493 8 0.117 20 0.348 -68 0.1 0.723 -22 32.706 163 0.006 79 0.949 -9 0.5 0.487 -88 19.861 116 0.021 60 0.695 -26 0.9 0.373 -127 12.612 96 0.031 55 0.556 -32 1.0 0.355 -134 11.492 92 0.033 55 0.555 -32 1.5 0.317 -164 7.867 77 0.044 53 0.494 -34 1.9 0.312 177 6.309 67 0.053 52 0.460 -37 2.0 0.315 173 6.004 65 0.055 51 0.454 -37 2.4 0.327 159 5.044 56 0.064 48 0.429 -41 3.0 0.354 142 4.069 44 0.078 43 0.390 -47 3.5 0.371 128 3.507 35 0.089 38 0.384 -52 4.0 0.383 116 3.073 25 0.099 33 0.376 -57 4.5 0.400 105 2.757 16 0.109 27 0.361 -61 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information Table 6. Common Emitter S-Parameters (Continued) VCE (Vdc) IC (mA) 20 S11 f (MHz) S21 S12 S22 |S11| |S21| |S12| |S22| 5.0 0.427 95 2.500 7 0.120 21 0.341 -65 0.1 0.660 -27 37.408 160 0.006 79 0.933 -10 0.5 0.430 -98 20.678 112 0.021 60 0.672 -27 0.9 0.343 -137 12.691 93 0.030 59 0.548 -31 1.0 0.335 -144 11.493 89 0.032 59 0.526 -31 1.5 0.313 -172 7.854 75 0.044 57 0.479 -33 1.9 0.317 171 6.249 66 0.052 55 0.450 -34 2.0 0.318 168 5.963 64 0.055 54 0.446 -35 2.4 0.332 155 4.996 55 0.065 51 0.421 -38 3.0 0.365 140 4.042 43 0.080 45 0.381 -44 3.5 0.379 127 3.486 34 0.090 40 0.366 -50 4.0 0.393 115 3.068 25 0.102 34 0.356 -55 4.5 0.411 105 2.747 16 0.112 29 0.342 -61 5.0 0.434 94 2.492 6 0.123 23 0.324 -66 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-21 Applications Information Table 7. Common Emitter Noise Parameters VCE (V) IC (mA) freq (Ghz) NFmin (dB) 2.0 5.0 0.5 3.0 MBC13900 5-22 3.0 Gamma Opt Rn rn GNF (dB) K Mag Ang 0.76 0.26 3 9.0 0.18 25.27 0.29 0.7 0.76 0.25 14 8.5 0.17 23.60 0.37 0.9 0.77 0.24 25 8.5 0.17 22.03 0.48 1.0 0.77 0.24 31 8.0 0.16 21.29 0.51 1.5 0.82 0.23 60 7.0 0.14 17.94 0.74 1.9 0.90 0.22 85 6.5 0.13 15.73 0.90 2.0 0.92 0.22 91 6.5 0.13 15.24 0.93 2.4 1.03 0.22 116 5.5 0.11 13.54 1.03 3.0 1.24 0.23 155 5.0 0.10 11.75 1.17 3.5 1.47 0.25 -172 5.0 0.10 10.96 1.23 4.0 1.74 0.27 137 6.5 0.13 10.81 1.29 0.5 0.76 0.38 8 12.0 0.24 24.32 0.22 0.7 0.76 0.37 17 11.5 0.23 22.70 0.28 0.9 0.76 0.37 26 11.0 0.22 21.19 0.36 1.0 0.77 0.36 31 11.0 0.22 20.47 0.38 1.5 0.82 0.35 56 9.5 0.19 17.24 0.59 1.9 0.91 0.34 77 8.5 0.17 15.10 0.76 2.0 0.94 0.34 83 8.0 0.16 14.63 0.79 2.4 1.06 0.33 105 6.5 0.13 12.98 0.94 3.0 1.32 0.31 141 5.0 0.10 11.27 1.12 3.5 1.59 0.30 173 4.5 0.09 10.52 1.24 4.0 1.92 0.29 -153 6.5 0.13 10.39 1.34 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information Table 8. SPICE Parameters (MBC13900 Die Parameters) Name Value Name Value Name Value IS 2.77E-16 IRB 0.006 TF 6.34E-12 BF 181.6 RBM 0.047 XTF 3.051 NF 1.012 RE 4.431 VTF 1.336 VAF 40.66 RC 5.845 ITF 0.202 IKF 0.237 XTB 0.6 PTF 0 ISE 3.79E-14 EG 1.195 TR 1.02E-09 NE 2.00 XTI 0.8 FC 0.95 BR 4.547 CJE 4.52E-13 NR 1.00 VJE 1.95 VAR 2.722 MJE 0.58 IKR 9.98E-04 CJC 1.56E-13 ISC 3.78E-15 VJC 0.424 NC 2.00 MJC 0.232 RB 9.055 XCJC 0.187 0.6 nH B 0.5 nH 7.0 fF C B E 140 fF 0.5 nH 0.25 nH 0.6 nH C 140 fF 0.1 nH E Figure 22. Simplified Package Model MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-23 Applications Information j1.0 j0.5 j2.0 OUT PUT j0.2 VCE = 2.0 V UT INP IC = 5.0 mA ---Potentially Unstable NF Opt = 0.77 dB 23 dB 22 f (GHz) NF Opt (dB) O Rn K 0.9 0.77 0.24 25.2 8.5 0.48 1.0 dB 21 20 - j0.2 1.5 2.0 3.0 - j0.5 - j2.0 4.0 - j1.0 0.2 0.5 1.0 2.0 Figure 23. Constant Gain and Noise Figure Contours (f = 900 MHz) j1.0 j0.5 j2.0 OUT PUT VCE = 2.0 V j0.2 IC = 5.0 mA ---Potentially Unstable INPUT NF Opt = 0.90 dB 1.0 dB f (GHz) NF Opt (dB) O Rn K 1.9 0.9 0.22 84.5 6.5 0.90 19 dB 18 17 - j0.2 1.5 dB 16 2.0 dB 3.0 - j2.0 4.0 - j0.5 - j1.0 0.2 0.5 1.0 2.0 Figure 24. Constant Gain and Noise Figure Contours (f = 1.9 GHz) MBC13900 5-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Applications Information j1.0 j0.5 j2.0 OUT PUT VCE = 3.0 V j0.2 UT INP IC = 3.0 mA ---Potentially Unstable NF Opt = 0.76 dB f (GHz) NF Opt (dB) O Rn K 0.9 0.76 0.37 26.3 11 0.36 1.0 dB 21 dB 20 19 - j0.2 1.5 18 2.0 3.0 - j2.0 4.0 - j0.5 - j1.0 0.2 0.5 1.0 2.0 Figure 25. Constant Gain and Noise Figure Contours (f = 900 MHz) j1.0 j0.5 j2.0 OUT PUT j0.2 VCE = 3.0 V NF Opt = 0.91 dB IC = 3.0 mA ---Potentially Unstable UT INP 1.0 dB f (GHz) NF Opt (dB) O Rn K 1.9 0.91 0.34 77.2 8.5 0.76 18 dB 1.5 17 16 - j0.2 2.0 15 3.0 4.0 - j2.0 - j0.5 - j1.0 0.2 0.5 1.0 2.0 Figure 26. Constant Gain and Noise Figure Contours (f = 1.9 GHz) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MBC13900 5-25 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. * Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power -- 4 Watts PEP Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- -29 dBc * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 2000 MHz, 4 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 458B-03, STYLE 1 (NI-200S) (MRF281SR1) CASE 458C-03, STYLE 1 (NI-200Z) (MRF281ZR1) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 20 0.115 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 5.74 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 74 -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1 Adc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF281SR1 MRF281ZR1 5-26 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) VGS(th) 2.4 3.2 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(q) 3 4.1 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 A) VDS(on) 0.18 0.24 0.30 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.5 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 3.3 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 0.17 -- pF Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 11 12.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 30 33 -- % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL -- -16 -10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- -31 -29 dBc Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 11 12.5 -- dB 30 -- -- % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL -- -16 -10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- -31 -- dBc Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Gps 10.5 12 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) 40 44 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Test) Characteristic ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation In Output Power MRF281SR1 MRF281ZR1 5-27 " ! " ! ! ! f MHz Zin ZOL* Zin 1500 3.15 - j5.3 15.5 - j13.6 1600 3.1 - j3.8 14.7 - j12.5 1700 3.1 - j2.3 14.0 - j11.7 1800 3.1 - j0.7 13.4 - j11.0 1900 3.1 + j0.9 12.8 - j10.1 2000 3.1 + j2.4 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 1. Series Equivalent Input and Output Impedance MRF281SR1 MRF281ZR1 5-28 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source S-Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz S11 S21 S12 S22 |S11| f dB f |S12| f |S22| f 0.1 .982 -28 18.9 160 .008 73 .851 -13 0.2 .947 -52 17.0 143 .015 58 .811 -25 0.3 .912 -73 15.0 129 .019 45 .770 -33 0.4 .886 -90 12.9 117 .022 36 .741 -42 0.5 .859 -103 11.1 108 .022 28 .719 -47 0.6 .854 -114 9.69 100 .023 23 .718 -51 0.7 .841 -123 8.54 93 .022 18 .709 -56 0.8 .837 -131 7.57 87 .021 15 .714 -59 0.9 .838 -138 6.69 81 .019 12 .719 -62 1.0 .841 -143 6.01 76 .018 11 .728 -64 1.1 .840 -149 5.41 72 .015 12 .742 -66 1.2 .849 -153 4.91 68 .013 13 .745 -68 1.3 .848 -158 4.51 64 .012 18 .758 -69 1.4 .856 -162 4.12 60 .010 26 .769 -70 1.5 .858 -167 3.78 57 .009 36 .786 -70 1.6 .871 -170 3.50 54 .008 54 .797 -72 1.7 .868 -173 3.22 51 .009 69 .808 -71 1.8 .870 -176 3.00 49 .009 82 .823 -72 1.9 .872 -180 2.80 46 .011 95 .828 -72 2.0 .877 178 2.63 44 .013 104 .845 -72 2.1 .876 174 2.47 41 .015 109 .843 -72 2.2 .880 171 2.36 39 .018 111 .859 -71 2.3 .882 168 2.21 36 .021 114 .858 -72 2.4 .886 165 2.12 34 .024 114 .872 -70 2.5 .896 162 1.97 32 .027 115 .863 -70 2.6 .897 158 1.89 29 .029 117 .873 -69 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF281SR1 MRF281ZR1 5-29 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power -- 10 Watts PEP Power Gain -- 10.5 dB Efficiency -- 28% Intermodulation Distortion -- -31 dBc * Specified Single-Tone Performance @ 2000 MHz, 26 Volts Output Power -- 10 Watts CW Power Gain -- 9.5 dB Efficiency -- 35% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 2000 MHz, 10 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 458B-03, STYLE 1 (NI-200S) (MRF282SR1) CASE 458C-03, STYLE 1 (NI-200Z) (MRF282ZR1) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 60 0.34 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 4.2 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1.0 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1.0 Adc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 12 MRF282SR1 MRF282ZR1 5-30 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 Adc) VGS(th) 2.0 3.0 4.0 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) VDS(on) -- 0.4 0.6 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 15 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 8.0 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 0.45 -- pF Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 10.5 11.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 28 -- -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL -- -14 -9 dB Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 10.5 11.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) 28 -- -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL -- -14 -9 dB Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Gps 9.5 11.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) 35 40 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Characteristic ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation In Output Power MRF282SR1 MRF282ZR1 5-31 3 34 ) /1 3 35 3 ; 95 : 3 9 : 9 97 96 9" 9 5 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 6 9 9 95 ; 9 : :5 98 0.491 x 0.080 Microstrip 0.253 x 0.080 Microstrip 0.632 x 0.080 Microstrip 0.567 x 0.080 Microstrip 1.139 x 0.055 Microstrip 0.236 x 0.055 Microstrip 0.180 x 0.325 Microstrip 0.301 x 0.325 Microstrip 0.439 x 0.325 Microstrip 0.055 x 0.325 Microstrip " 8 7 /1 5 9 Z11 Z12 Z13 Z14 Z15 Z16 Raw Board Material 9 9 97 34 /1 /1 96 0.636 x 0.055 Microstrip 0.303 x 0.055 Microstrip 0.463 x 0.080 Microstrip 0.105 x 0.080 Microstrip 0.452 0.085 x 0.080 Microstrip 0.910 0.085 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 1. 1.93 - 2.0 GHz Broadband Test Circuit Schematic Table 1. 1.93 - 2.0 GHz Broadband Test Circuit Component Designations and Values Designators Description B1, B4 Surface Mount Ferrite Beads, 0.120 x 0.333 x 0.100, Fair Rite #2743019446 B2, B3 Surface Mount Ferrite Beads, 0.120 x 0.170 x 0.100, Fair Rite #2743029446 C1, C2, C9 0.8-8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL C3 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 C4, C5, C13, C16 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C6 200 pF Chip Capacitor, B Case, ATC #100B201JCA500X C7 18 pF Chip Capacitor, B Case, ATC #100B180KP500X C8 39 pF Chip Capacitor, B Case, ATC #100B390JCA500X C10 27 pF Chip Capacitor, B Case, ATC #100B270JCA500X C11 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X C12 0.6-4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL C14 0.5 pF Chip Capacitor, B Case, ATC #100B0R5BCA500X C15 15 pF Chip Capacitor, B Case, ATC #100B150JCA500X C17 0.1 pF Chip Capacitor, B Case, ATC #100B0R1BCA500X C18 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394 R1 560 k, 1/4 W Chip Resistor, 0.08 x 0.13 R2, R5 12 , 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT R3, R4 91 W, 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B910JT WS1, WS2 Beryllium Copper Wear Blocks 0.010 x 0.235 x 0.135 NOM Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, Omni-Spectra # 3052-1648-10 4-40 Ph Head Screws, 0.125 Long 4-40 Ph Head Screws, 0.188 Long 4-40 Ph Head Screws, 0.312 Long 4-40 Ph Rec. Hd. Screws, 0.438 Long RF Circuit Board MRF282SR1 MRF282ZR1 5-32 3 x 5 Copper Clad PCB, Glass Teflon MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 9 3 9 97 95 96 : : 3 97 35 3 : 9" :5 9 9 95 9 < 9 < 9 9 9 98 96 9 MRF282 Rev-0 D. W. Joersz Figure 2. 1.93-2.0 GHz Broadband Test Circuit Component Layout MRF282 Rev-0 D. W. Joersz <&%=* > Figure 3. MRF282 Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF282SR1 MRF282ZR1 5-33 3 ; 9 34 ) /1 : 9 5 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 35 3 : 96 9 :5 9 5 97 6 9 9 /1 98 95 0.122 x 0.08 Microstrip 0.650 x 0.08 Microstrip 0.160 x 0.08 Microstrip 0.030 x 0.08 Microstrip 0.045 x 0.08 Microstrip 0.291 x 0.08 Microstrip 0.483 x 0.330 Microstrip Z8 Z9 Z10 Z11 Raw Board Material 7 3 3 3 : 9" : 95 : 8 9 " 9 ; 34 /1 /1 9 96 0.414 x 0.330 Microstrip 0.392 x 0.08 Microstrip 0.070 x 0.08 Microstrip 1.110 x 0.08 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 4. 1.81 - 1.88 GHz Broadband Test Circuit Schematic Table 2. 1.81 - 1.88 GHz Broadband Test Circuit Component Designations and Values Designators Description B1, B2, B3, B4, B5, B6 Surface Mount Ferrite Beads, 0.120 x 0.170 x 0.100, Fair Rite #2743029446 C1, C16 470 F, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L C2, C9, C12, C17 0.6-4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL C3 0.8-8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL C4, C13 0.1 F Chip Capacitors, Kemet #CDR33BX104AKWS C5, C14 100 pF Chip Capacitors, B Case, ATC #100B101JCA500X C6, C8, C11, C15 12 pF Chip Capacitors, B Case, ATC #100B120JCA500X C7, C10 1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X L1 3 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.053 Long, 6.0 nH L2 5 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.091 Long, 15 nH L3, L4 9 Turns, 26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH L5 4 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.078 Long, 10 nH R1, R2, R3 12 , 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT R4, R5, R6 0.08 x 0.13 Resistors, Garrett Instruments #RM73B2B120JT W1, W2 Beryllium Copper 0.010 ? "" ? "" MRF282SR1 MRF282ZR1 5-34 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA </ @ ; 3 3 3 9 35 3 36 : : 3 95 ; 9 9 9 :5 9 97 37 98 ; 38 9 3" 9 97 9" 34 ) /1 Z1 Z2 Z3 Z4 Z5 Z6 5 96 95 /1 6 7 9 9" 0.624 x 0.08 Microstrip 0.725 x 0.08 Microstrip 0.455 x 0.08 Microstrip 0.530 x 0.330 Microstrip 0.280 x 0.330 Microstrip 0.212 x 0.330 Microstrip Z7 Z8 Z9 Raw Board Material 96 9 9 8 34 /1 /1 98 0.408 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 5. Class A Broadband Test Circuit Schematic Table 3. Class A Broadband Test Circuit Component Designations and Values Designators Description B1, B2, B3 Ferrite Beads, Ferroxcube #56-590-65-3B C1, C20 470 F, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L C2 0.01 F Chip Capacitor, B Case, ATC #100B103JCA50X C3, C10, C15 0.6-4.5 pF Variable Capacitors, Johanson #27271SL C4, C16 0.02 F Chip Capacitors, B Case, ATC #100B203JCA50X C5 100 F, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256 C6, C7, C9, C14, C17 12 pF Chip Capacitors, B Case, ATC #100B120JCA500X C8, C13 51 pF Chip Capacitors, B Case, ATC #100B510JCA500X C11, C12 0.3 pF Chip Capacitors, B Case, ATC #100B0R3CCA500X C18 0.1 F Chip Capacitor, Kemet #CDR33BX104AKWS C19 0.4-2.5 pF Variable Capacitor, Johanson #27285 L1 8 Turns, 0.042 ID, 24 AWG, Enamel L2 9 Turns, 0.046 ID, 26 AWG, Enamel Q1 NPN, 15 W, Bipolar Transistor, MJD310 Q2 PNP, 15 W, Bipolar Transistor, MJD320 R1 200 , 1/4 W Axial Resistor R2 1.0 k, 1/2 W Potentiometer, Bourns R3 13 -, 1/4 W Axial Resistor R4, R6, R7 390 , 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT R5 1.0 , 10 W 1% Resistor, Dale #RE65G1R00 R8, R9, R10 12 , 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT Input/Output Type N Flange Mount RF55-22 Connectors, Omni-Spectra MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF282SR1 MRF282ZR1 5-35 " ! 7 ! " ! 7 ! 6 " f MHz Zin ZOL* Zin 1800 2.1 + j1.0 3.8 - j0.15 1860 2.05 + j1.15 3.77 - j0.13 1900 2.0 + j1.2 3.75 - j0.1 1960 1.9 + j1.4 3.65 + j0.1 2000 1.85 + j1.6 3.55 + j0.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 6. Series Equivalent Input and Output Impedence MRF282SR1 MRF282ZR1 5-36 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio and wireless local loop. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = -29 dBc * Typical Single-Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.5 dB Efficiency = 45% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 2000 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-05, STYLE 1 NI-360 MRF284R1 CASE 360C-05, STYLE 1 NI-360S MRF284LSR1 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 87.5 0.5 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 2.0 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) IDSS -- -- 1.0 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 10 Adc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 13 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF284R1 MRF284LSR1 5-37 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) VGS(th) 2.0 3.0 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) -- 0.3 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) gfs -- 1.5 -- S Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 43 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 23 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.4 -- pF Common-Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 9 10.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 30 35 -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- -32 -29 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL -- -15 -9 dB Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 9 10.4 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) -- 35 -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- -34 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL -- -15 -9 dB Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Gps 8.5 9.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) 35 45 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz, VSWR = 10:1, at All Phase Angles) Characteristic ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system) MRF284R1 MRF284LSR1 5-38 No Degradation In Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 ; 3 9 95 35 : 9 3 : 96 9 95 3 3 36 :5 9 5 9 " 5 9 9 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 ; 6 7 9" 98 /1 8 5 ; 96 34 ) /1 97 5 6 34 /1 /1 9 9 97 0.530 x 0.080 Microstrip 0.255 x 0.080 Microstrip 0.600 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.015 x 0.325 Microstrip 0.085 x 0.325 Microstrip 0.165 x 0.325 Microstrip 0.110 x 0.515 Microstrip 0.095 x 0.515 Microstrip 0.050 x 0.515 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.155 x 0.515 Microstrip 0.120 x 0.325 Microstrip 0.150 x 0.325 Microstrip 0.010 x 0.325 Microstrip 0.505 x 0.080 Microstrip 0.865 x 0.080 Microstrip 0.525 x 0.080 Microstrip Arlon GX0300-55-22, 0.030, r = 2.55 Figure 1. 1.93-2.0 GHz Broadband Test Circuit Schematic Table 1. 1.93 - 2.0 GHz Broadband Test Circuit Component Designations and Values Designators Description B1 - B3 Ferrite Beads, Round, Ferroxcube #56-590-65-3B C1, C2, C8 0.8-8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL C3, C17 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C4, C14 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 220 pF Chip Capacitor, B Case, ATC #100B221KP500X C6, C12 1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X C7, C13 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X C9 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X C10 2.7 pF Chip Capacitor, B Case, ATC #100B2R7CCA500X C11 0.6-4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL C15, C16 200 pF Chip Capacitors, B Case, ATC #100B201KP500X C18 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 L1, L2 4 Turns, #24 AWG, 0.120 OD, 0.140 Long, (12.5 nH), Coilcraft #A04T-5 L3 2 Turns, #24 AWG, 0.120 OD, 0.140 Long, (5.0 nH), Coilcraft #A02T-5 R1, R2, R3, R5, R6, R7 12 , 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT R4 560 k, 1/4 W Chip Resistor, 0.08 x 0.13 W1, W2, W3 Solid Copper Buss Wire, 16 AWG WS1, WS2 Beryllium Copper Wear Blocks 0.005 x 0.250 x 0.250 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF284R1 MRF284LSR1 5-39 9 3 3 : 35 3 :5 3 : 95 5 36 96 3 96 95 98 9 9 9 9 9 < 97 9 9" < 5 9 9 9 97 MRF284 Rev-0 Figure 2. 1.93-2.0 GHz Broadband Test Circuit Component Layout MRF284 Rev-0 <&%=* > Figure 3. MRF284 Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) MRF284R1 MRF284LSR1 5-40 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA </ @ ; 3 9 35 3 3 3 3 ; 98 : : 38 3" 3 9 : : :5 96 36 97 37 9 9 9 95 9" ; 9 34 ) /1 5 5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 " 6 7 8 5 /1 34 /1 /1 9 9 96 95 9 0.363 x 0.080 Microstrip 0.080 x 0.080 Microstrip 0.916 x 0.080 Microstrip 0.517 x 0.080 Microstrip 0.050 x 0.325 Microstrip 0.050 x 0.325 Microstrip 0.071 x 0.325 Microstrip 0.125 x 0.325 Microstrip 0.210 x 0.515 Microstrip 9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.210 x 0.515 Microstrip 0.235 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.510 x 0.080 Microstrip 0.990 x 0.080 Microstrip 0.390 x 0.080 Microstrip Arlon GX0300-55-22, 0.030, r = 2.55 Figure 4. 2.0 GHz Class A Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF284R1 MRF284LSR1 5-41 Table 2. 2.0 GHz Class A Test Circuit Component Designations and Values Designators Description B1 - B5 Ferrite Beads, Round, Ferroxcube # 56-590-65-3B C1, C9, C16 100 F, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L C2, C13 51 pF Chip Capacitors, B Case, ATC #100B510JCA500x C3, C14 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X C4, C11 12 pF Chip Capacitors, B Case, ATC #100B120JCA500X C5 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL C6 4.7 pF Chip Capacitor, B Case, ATC #100B4R7CCA500X C7, C15 91 pF Chip Capacitors, B Case, ATC #100B910KP500X C8 1000 pF Chip Capacitor, B Case, ATC #100B102JCA50X C10 0.1 F Chip Capacitor, Kemet #CDR33BX104AKWS C12, C17 0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL L1 4 Turns, #27 AWG, 0.087 OD, 0.050 ID, 0.069 Long, 10 nH L2 5 Turns, #24 AWG, 0.083 OD, 0.040 ID, 0.128 Long, 12.5 nH L3, L4 9 Turns, #26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH P1 1000 Potentiometer, 1/2 W, 10 Turns, Bourns Q1 Transistor, NPN, Motorola P/N: MJD31, Case 369A-10 Q2 Transistor, PNP, Motorola P/N: MJD32, Case 369A-10 R1 360 , Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B361JT R2 2 x 12 k, Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B122JT R3 1 , Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00 R4 4 x 6.8 k, Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B682JT R5 2 x 1500 , Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B152JT R6 270 , Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B271JT R7 - R11 12 , Fixed Film Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT MRF284R1 MRF284LSR1 5-42 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS 5 " 5" " #2 " " " " " 8 7 0& "" """ $! <(=* 1 * " 5 5 5 5" " 0& "" <(=* 1 * 6 5" " ) /1 3 11< " " 7"" 7" 7" 7" 77" 8"" 8" 8" 8" 87" """ 43/)9@ $! BC" 0& "" BC5" """" $! """ $! BC" BC" BC" BC6" BC7" Figure 6. Output Power versus Frequency B #2 " 5,0 ,0*, ' ,0*, 6' ,0*, " B" #2 A)A0: $A)13$/1)A<131)A0:& Figure 5. Output Power & Power Gain versus Input Power B 8 B5" 7 5" "" """" $! """ $! 6 " " /1 /1 3 11< 7 BC5" 5 0& """" $! """ $! "" BC" 5"" $ " 3) </ @ 1 0& B5 B" 7 Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage #2 A 3A)A0: $A)13$/1)A<131)A0:& Figure 7. Intermodulation Distortion Products versus Output Power BC" B" $A)13$/1)A<131)A0:& 5 A/1 /1A 3A11< #2 A)A0: A/1 /1A 3A11< " "" 5"" "" " "" BC" 8 "" BC" " " " 0& """" $! """ $! "" 7 " " " /1 /1 3 11< /1 /1 3 11< Figure 9. Intermodulation Distortion versus Output Power Figure 10. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF284R1 MRF284LSR1 5-43 TYPICAL CHARACTERISTICS 5 "" 922 1=%(* ""9 9A9 91)9A#4 9 22 " 1E 69 7 " 7 " 3) </ @ 1 0& 7 " < 3) </39 1 1< #2 " 4/)$)1 " 8 5,0 ,0*, 0& 7 0& """" $! """ $! " " " 5" 5 " ) /1 3 0: 7 Figure 12. Capacitance versus Drain Source Voltage #2A)A0: " " " 5" " " " B" BD" BD5" BC" BC" BD" B6" BD7" BD8" " Figure 13. Class A Third Order Intercept Point 7 6 0& 5" "" 1+ B1 * 4,*F*&G *=% "" -! 5" " 5 $ B5 <3 8" 8" 5" B5 5 8" 43/)9@ $! 87" B" """ Figure 14. 1.92-2.0 GHz Broadband Circuit Performance ;" $1:4A4913A/3<A?A$ <AAA A/1 /1A 3A0: Figure 11. DC Safe Operating Area ;"8 ;"7 ;"6 ;" ;" ;" " " "" " "" 1E E/)91) 1$ 31/3 9 " 1'2 (,%#' 02#=%G2 &%=&=%*0 $1:4 ' ,2 ? % #*,* 0,% &,,* * *22 % *=*.%*0 * #*,%,* '%.* & ,,*=%*0 I**, '% "H '* '* ,*&%= #,*0& , *%= %=,* .0* $1:4 %& , IG , $1:4 % #%,&=%, %##=&% Figure 15. MTBF Factor versus Junction Temperature MRF284R1 MRF284LSR1 5-44 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " ) /1A<3 " 449)9@AH " 9,22 )13$/1) <131)A0:& A3)A9/33)1A0& 1=%(* 69 7"" $! 7"" $! = %0 """ $! 2 ,&* """ $! 99 "" .( Zload f MHz Zsource 1800 1.0 - j0.4 2.1 + j0.4 1860 1.0 - j0.8 2.2 - j0.2 1900 1.0 - j1.1 2.3 - j0.5 1960 1.0 - j1.4 2.5 - j0.9 2000 1.0 - j2.3 2.6 - j0.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 16. Series Equivalent Input and Output Impedence MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF284R1 MRF284LSR1 5-45 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 32 volt transmitter equipment. * Typical Narrowband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power -- 180 Watts PEP Power Gain -- 17 dB Efficiency -- 36% IMD -- -35 dBc * Typical Broadband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power -- 180 Watts PEP Power Gain -- 14.5 dB Efficiency -- 37% IMD -- -31 dBc * Internally Matched, Controlled Q, for Ease of Use * Integrated ESD Protection * 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 470 - 860 MHz, 180 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375G-04, STYLE 1 NI-860C3 MAXIMUM RATINGS (1) Symbol Value Unit Drain-Source Voltage Rating VDSS 68 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Drain Current - Continuous ID 17 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 350 2.0 W W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.5 C/W (1) Each side of device measured separately. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MRF372 5-46 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 68 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) -- 0.28 0.45 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs -- 2.6 -- S Input Capacitance (Includes Input Matching Capacitance) (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss -- 260 -- pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss -- 69 -- pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss -- 2.5 -- pF OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =10 A) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF372 Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17 -- dB Drain Efficiency (VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) 33 36 -- % IMD -- -35 -31 dBc Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Output Mismatch Stress (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR = 3:1 at all phase angles of test) No Degradation in Output Power TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF372 Broadband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) Gps -- 14.5 -- dB Drain Efficiency (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) -- 37 -- % Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) IMD -- -31 -- dBc (1) Each side of device measured separately. (2) Measured in push-pull configuration. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF372 5-47 TYPICAL CHARACTERISTICS " 922 " "" " 9 22 " " " 9,22 " " 5" " " 9 ,22 AA9%#%&%&*A#4 9 22 AA9 22 AA9%#%&%&*A#4 "" " " < 3)B</39 1 1< Note: Ciss does not include input matching capacitance. Figure 1. Capacitance versus Voltage MRF372 5-48 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 1 5 3 35 3) 3 3 ; 95 3 9 97 96 9 9" Figure 2. 860 MHz Narrowband DC Bias Networks Table 1. 860 MHz Narrowband DC Bias Networks Component Designations and Values AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Designation Description C1 2.2 pF Chip Capacitor, B Case, ATC C2 0.5 -- 5.0 pF Variable Capacitor, B Case, Johansen Gigatrim C3A, B 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS C4A, B, C14A, B 47.0 pF Chip Capacitors, B Case, ATC C5A, B 100 pF Chip Capacitors, B Case, ATC C6 10.0 pF Chip Capacitor, B Case, ATC C7A, B 2.7 pF Chip Capacitors, A Case, ATC C8A, B 1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT C9 10.0 pF Chip Capacitor, B Case, ATC C10A, B 2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT C11 5.1 pF Chip Capacitor, B Case, ATC C12A, B 0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT C13 3.9 pF Chip Capacitor, B Case, ATC C15 1.2 pF Chip Capacitor, B Case, ATC L1A, B 130 nH, Coilcraft #132-11SM L2A, B #24 AWG, 3 Turns Loose, Fair Rite #2643706001 L3A, B 3.85 nH, Coilcraft #0906-4 L4A, B 5.0 nH, Coilcraft #A02T R1A, B, R2A, B R4A, B, R5A, B 180 , 1/4 W Chip Resistors, Vishay Dale (1210) R3A, B 12 , 1/8 W Chip Resistors, Vishay Dale (1206) PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, , = 3.48 Balun A, B Vertical 860 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, , = 10.2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF372 5-49 3 3 95 9" 97 9 5 3 3 35 9 9 96 9 9 9 9 35: 95: : 9 98 9: : 5: 9: 3: 3: 97: 3: : 3: 96: 95 9 9: 9: 9": $3456 3*.A% Vertical Balun Mounting Detail # ' &, 2,# $ , =% *,&%= 7" $! :%= 3 (*,2 35"" " = '&- # ' &, 2,# 9: <I2,%* 5" = '&- ) *> 1, :%= 9: 2 '% % 5 = J%IJ 2 '* % 9: K2= J ,*2=( :%= 2 =0*, #%02 I*( =*.*= +' '* 9: 2I2,%* 2 =0*, #%02 +'* ==G 2*,*0 # " ' &, 2,# , 0 = 2= & %&&*# :%= Figure 3. 860 MHz Narrowband Component Layout MRF372 5-50 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL TWO-TONE NARROWBAND CHARACTERISTICS 5 " #2 B" B h B5" B5 " B" $3 " B $3A)13$/1)A31A0: 5" hA3)A449)9@AH #2 A 3A)A0: B 5 0& M $ 0* $ " 0: *%-L.( 3% B" "" " /1 /1 3 11< ) *> $3 *%2,*0 2( *=% $%,-*, $*' 0 Figure 4. COFDM Performance (860 MHz) " 5" B B5" h " B5 #2 B" $3 " B " "" 7 #2A 3A)A0: B" " $3A)13$/1)A31A0: hA3)A449)9@AH #2 A 3A)A0: 5 B 5 0& 0: *%-L.( 3% B" 7"" "" 5 0& 76 $! 75 $! " " /1 /1 3 11< ) *> /1 /1 3 11< $3 *%2,*0 2( *=% $%,-*, $*' 0 Figure 6. Power Gain versus Output Power B" B" 5 0& 76 $! 75 $! " "" B B5" 7"" B5 B" B B" A3)A449)9@AH $A)13$/1)A<131)A0:& Figure 5. 8-VSB Performance (860 MHz) B "" "" /1 /1 3 11< Figure 7. Intermodulation Distortion versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 5" " " " 5 5 0& 7"" 76 $! 75 $! " "" /1 /1 3 11< Figure 8. Drain Efficiency versus Output Power MRF372 5-51 " 76 $! = %0 7 $! 76 $! 2 ,&* 7 $! 5 7"" 7" f MHz Zload Zsource 845 3.99 - j2.50 5.63 + j0.38 860 3.56 - j1.98 5.28 + j0.43 875 3.18 - j1.46 4.94 + j0.56 Harmonics f GHz Zsource Zload 1.69 2.85 + j14.30 1.23 + j9.37 1.72 3.27 + j14.32 1.54 + j9.60 1.75 3.35 + j14.36 1.73 + j9.62 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 9. Narrowband Series Equivalent Input and Output Impedance MRF372 5-52 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 1 3 3) 3 5 38 38: ; 98 97 ; 36 35 3 96 97 96 9 31 Figure 10. 470-860 MHz Broadband DC Bias Networks Table 2. 470-860 MHz Broadband DC Bias Networks Component Designations and Values AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Designation Description C1 0.7 pF Chip Capacitor, B Case, ATC C2, C13 0.8 -- 8.0 pF Variable Capacitors, Johansen Gigatrim C3A, B, C14A, B, C, D 100 pF Chip Capacitors, B Case, ATC C4 4.7 pF,Chip Capacitor, B Case, ATC C5 7.5 pF Chip Capacitor, B Case, ATC C6 10.0 pF Chip Capacitor, B Case, ATC C7A, B 6.2 pF Chip Capacitors, A Case, ATC C8A, B 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS C9A, B 0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT C10 13 pF Chip Capacitor, B Case, ATC C11 6.8 pF Chip Capacitor, B Case, ATC C12 3.9 pF Chip Capacitor, B Case, ATC C15A, B 3.3 pF Chip Capacitors, B Case, ATC C16A, B 10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS C17A, B 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT C18A, B 0.01 mF Chip Capacitors, B Case, ATC L1A, B 12.55 nH, Coilcraft #1606-10 L2A, B 5.45 nH, Coilcraft #0906-5 L3A, B, C 12.5 nH, Coilcraft #A04T R1A, B 10 , 1/4 W Chip Resistors, Vishay Dale (1210) R2A, B 2.2 k, 1/4 W Chip Resistors, Vishay Dale (1210) R3A, B, R10A, B 390 , 1/8 W Chip Resistors, Vishay Dale (1206) R4TA, B 520 , Thermistor, Vishay #NTHS--1206J14520R5% R5A, B 6.2 , 1/4 W Chip Resistors, Vishay Dale (1210) R6A, B 6.8 k, 1/4 W Chip Resistors, Vishay Dale (1210) R7 100 k Potentiometer, Bourns R8 47.3 k, 1/8 W Chip Resistor, Vishay Dale (1206) R9A, B, C, D 180 , 1/4 W Chip Resistors, Vishay Dale (1210) PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, , = 3.48 Balun A, B Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, , = 10.2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF372 5-53 97 3 37 31 3 98 3 35 96 3 95 9 9 9 3: 5 38: 5: 95: 3: : 3: : 98: 3: 97 38 9" 9 9 9 9 97: 96: 35: 9 96 389 59 9 9 9: 95 38 3" 99 9 9: 97: 96: 36 31: 3": 9: $3456 3*.A% Vertical Balun Mounting Detail # ' &, 2,# $ , =% *,&%= " $! :%= 3 (*,2 35"" " = '&- # ' &, 2,# 9: <I2,%* 5" = '&- ) *> 1, :%= 9: 2 '% % 5 = K%IJ 2 '* % 9: K2= J ,*2=( :%= 2 =0*, #%02 I*( =*.*= +' '* 9: 2I2,%* 2 =0*, #%02 +'* ==G 2*,*0 # " ' &, 2,# , 0 = 2= & %&&*# :%= Figure 11. 470-860 MHz Broadband Component Layout MRF372 5-54 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL TWO-TONE BROADBAND CHARACTERISTICS 7 $A)13$/1)A<131)A0:& #2A 3A)A0: " 5 0& " B $! #2 " $! 6" $! 7" $! " " B" B B" 5 0& " B $! B B5" B" " $! B B" "" 7" $! $ 6" $! B5 " /1 /1 3 11< "" /1 /1 3 11< Figure 12. Power Gain versus Output Power Figure 13. Intermodulation Distortion versus Output Power 5 0& " B $! h A3)A449)9@AH " 5 h 7" $! 5" " $! 6" $! " " " "" /1 /1 3 11< Figure 14. Drain Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF372 5-55 " " 7" $! 7" $! 2 ,&* = %0 6" $! 6" $! 5 " 7" f MHz Zload Zsource 470 4.46 - j2.57 4.88 - j3.50 560 6.40 + j1.06 5.45 - j0.07 660 7.84 + j0.14 8.13 + j0.73 760 6.67 + j0.46 8.27 - j1.00 860 6.25 + j0.31 7.52 + j0.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 15. Broadband Series Equivalent Input and Output Impedance MRF372 5-56 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28/32 volt transmitter equipment. * Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power -- 75 Watts Power Gain -- 18.2 dB Efficiency -- 60% * 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW * Integrated ESD Protection * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 470 - 860 MHz, 75 W, 32 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-05, STYLE 1 NI-360 MRF373AR1 CASE 360C-05, STYLE 1 NI-360S MRF373ALSR1 < MAXIMUM RATINGS Rating Symbol Value Unit VDSS 70 Vdc VGS - 0.5, +15 Vdc PD 197 1.12 278 1.59 Watts W/C Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.89 0.63 C/W Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C MRF373AR1 MRF373ALSR1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF373AR1 MRF373ALSR1 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model Machine Model 1 (Minimum) MRF373AR1 MRF373ALSR1 M2 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF373AR1 MRF373ALSR1 5-57 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 70 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) -- 0.41 0.45 Vdc Input Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Ciss -- 98.5 -- pF Output Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Coss -- 49 -- pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Crss -- 2 -- pF Common Source Power Gain (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) Gps 16.5 18.2 -- dB Drain Efficiency (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) 56 60 -- % Load Mismatch (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz, Load VSWR at 10:1 at All Phase Angles) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =1 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS (50 ohm system) MRF373AR1 MRF373ALSR1 5-58 No Degradation in Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 35 96 3 9 9 95 9 9" 9 95 9 98 97 9 9 9 34 /1 /1 CUT OUT AREA 34 ) /1 9 9 96 3 $34565 3*.A" Figure 1. MRF373AR1/ALSR1 Narrowband Test Circuit Component Layout Table 1. MRF373AR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values Designation Description C1, C2 18 pF Chip Capacitors, B Case, ATC C3 12 pF Chip Capacitor, B Case, ATC C4 1.8 pF Chip Capacitor, B Case, ATC C5, C10 51 pF Chip Capacitors, B Case, ATC C6 0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS) C7 15 pF Chip Capacitor, B Case, ATC C8 10 pF Chip Capacitor, B Case, ATC C9 2.7 pF Chip Capacitor, B Case, ATC C11 0.5 pF Chip Capacitor, B Case, ATC C12 1000 pF Chip Capacitor, B Case, ATC C13 39 pF Chip Capacitor, B Case, ATC C14, C15 470 pF Chip Capacitors, B Case, ATC C16 2.2 mF, 100 V Chip Capacitor, Vishay #VJ3640Y225KXBAT C17 10 mF, 35 V Tantalum Capacitor, Kemet #T491D106K35AS L1A 12 nH, Coilcraft #A04T R1, R2 390 , 1/2 Chip Resistors, Vishay Dale (2010) R3 1 k, 1/2 Chip Resistor, Vishay Dale (2010) PCB Arlon GX-0300-55, 30 mils, r = 2.55 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF373AR1 MRF373ALSR1 5-59 TYPICAL CHARACTERISTICS " 8 #2 AA 3A)A0: 5 0& 7" $! "" "" 5"" 7 "" 6 "" " "" /1 /1 3 11< 9 Figure 2. Power Gain versus Output Power 5 0& 6 9 "" " 3 " 7 #2 " 7"" 7" 7" 7" 77" 8"" A3)A449)9@AH #2 A 3A)A0: 3 ) /1A31/3)A<<A0: 5" 8" 43/)9@ $! "" " " "" 922 " " 9 22 9 ,22 A9 91)9A#4 9 22 9 22 A9 91)9A#4 Figure 3. Performance in Narrowband Circuit 9,22 " " " " 5" " " " " < 3) </39 1 1< Figure 4. Capacitance versus Voltage MRF373AR1 MRF373ALSR1 5-60 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA = %0 2 ,&* 76 $! 76 $! 7 $! 7 $! 5 "" 6 9 f MHz Zsource Zload 845 0.58 - j0.29 1.60 + j0.07 860 0.56 - j0.11 1.65 + j0.22 875 0.56 + j0.06 1.79 + j0.38 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 5. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF373AR1 MRF373ALSR1 5-61 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 28/32 volt transmitter equipment. * Typical Two-Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power -- 130 Watts PEP Power Gain -- 17.3 dB Efficiency -- 41% IMD -- -32.5 dBc * 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz * Integrated ESD Protection * Excellent Thermal Stability * Characterized with Differential Large-Signal Impedance Parameters 470 - 860 MHz, 130 W, 32 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375F-04, STYLE 1 NI-650 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 70 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 302 1.72 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.58 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF374A 5-62 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 70 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) -- 0.41 0.45 Vdc Input Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss -- 97.3 -- pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss -- 49 -- pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss -- 1.91 -- pF OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =10 A) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF374A Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17.3 -- dB Drain Efficiency (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) 36 41.2 -- % Intermodulation Distortion (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) IMD -- -32.5 -28 dB Load Mismatch (VDD = 32 Vdc, Pout = 130 W Two-Tone, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR 10:1 at All Phase Angles of Test) No Degradation in Output Power TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF374 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) Gps -- 15.8 -- dB Drain Efficiency (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) -- 35 -- % Intermodulation Distortion (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) IMD -- 34.5 -- dB (1) Each side of device measured separately. (2) Measured in push-pull configuration. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF374A 5-63 $3456 3*. 5% < 96 35 5 3 9 95 3 34 ) /1 9 95 3 9 3: : 96: 35: < 9 9" 98: 3: 5: 9 98 9 9: 9 34 /1 /1 9 : 9: 9: 95: Vertical Balun Mounting Detail # ' &, 2,# $ , =% *,&%= 7" $! :%= 3 (*,2 35"" " = '&- # ' &, 2,# 9: <I2,%* 5" = '&- ) *> 1, :%= 9: 2 '% % 5 = J%IJ 2 '* % 9: K2= J ,*2=( :%= 2 =0*, #%02 I*( =*.*= +' '* 9: 2I2,%* 2 =0*, #%02 +'* ==G 2*,*0 # " ' &, 2,# , 0 = 2= & %&&*# :%= Figure 1. MRF374A Narrowband Test Circuit Component Layout MRF374A 5-64 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. MRF374A Narrowband Test Circuit Component Layout Designations and Values Designation Description C1 0.8 pF Chip Capacitor, B Case, ATC C2 2.2 pF Chip Capacitor, B Case, ATC C3 0.5 - 5.0 pF Variable Capacitor, Johanson Gigatrim C4A, B, C12A, B 47 pF Chip Capacitors, B Case, ATC C5 1.0 pF Chip Capacitor, B Case, ATC C6 10 pF Chip Capacitor, B Case, ATC C7A, B, C14A, B 100,000 pF Chip Capacitors, B Case, ATC C9A, B 15 pF Chip Capacitors, B Case, ATC C10 3.9 pF Chip Capacitor, B Case, ATC C11 5.1 pF Chip Capacitor, B Case, ATC C13A, B 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT L1A, B 5.0 nH, Coilcraft #A02T L2A, B 8.0 nH, Coilcraft #A03T L3A, B 130.0 nH, Coilcraft #132-11SMJ L4 8.8 nH, Coilcraft #1606-8 R1A, B 51 W, 1/4 W Chip Resistors, Vishay Dale (1210) R2 10 W, 1/2 W Chip Resistor, Vishay Dale (2010) R3A, B 3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206) R4A, B 180 W, 1/4 W Chip Resistors, Vishay Dale (1210) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, r = 3.48 Balun B1A, B Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF374A 5-65 98 < 3 3 97 36 9 34 ) /1 9 35 31 96 3 95 96 9 97: 9 9 95 34 /1 /1 9: : 96: 5: 97: 98 9" 98: 3: 36: < 97 9 95: 9 9 5 9 9 $3456 3 9: 3: 9: Vertical Balun Mounting Detail # ' &, 2,# $ , =% *,&%= " $! :%= 3 (*,2 35"" " = '&- # ' &, 2,# 9: <I2,%* 5" = '&- ) *> 1, :%= 9: 2 '% % 5 = K%IJ 2 '* % 9: K2= J ,*2=( :%= 2 =0*, #%02 I*( =*.*= +' '* 9: 2I2,%* 2 =0*, #%02 +'* ==G 2*,*0 # " ' &, 2,# , 0 = 2= & %&&*# :%= Figure 2. MRF374 Broadband Test Circuit Component Layout MRF374A 5-66 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 2. MRF374 Broadband Test Circuit Component Designations and Values Designation Description C1 0.8 pF Chip Capacitor, B Case, ATC C2 8.2 pF Chip Capacitor, B Case, ATC C3A, B, C14A, B 100 pF Chip Capacitors, B Case, ATC C4 7.5 pF Chip Capacitor, B Case, ATC C5 3.0 pF Chip Capacitor, B Case, ATC C6 9.1 pF Chip Capacitor, B Case, ATC C7 15 pF Chip Capacitor, B Case, ATC C8A, B 12 pF Chip Capacitors, B Case, ATC C9A, B 4.7 pF Chip Capacitors, B Case, ATC C10 10 pF Chip Capacitor, B Case, ATC C11 3.6 pF Chip Capacitor, B Case, ATC C12 3.0 pF Chip Capacitor, B Case, ATC C13 2.7 pF Chip Capacitor, B Case, ATC C15A, B 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT C16A, B 22 mF, 35 V Chip Capacitors, Kemet #491D226K035AS C17A, B 3.9 pF Chip Capacitors, B Case, ATC C18A, B 2.2 mF, 50 V Chip Capacitors, Vitramon #VJ2225Y225KXAAT C19 10 mF, 35 V Chip Capacitor, Kemet #T491D106K035AS L1A, B, L3A, B, L4, L5 8.0 nH, Coilcraft #A03T L2, L6 12.5 nH, Coilcraft #A04T R1A, B 22 , 1/8 W Chip Resistor, Vishay Dale (1206) R2A, B, R7A, B 10 , 1/8 W Chip Resistor, Vishay Dale (1206) R3 390 , 1/8 W Chip Resistor, Vishay Dale (1206) R4 2.4 k, 1/8 W Chip Resistor, Vishay Dale (1206) R5T 470 Thermistor, KOA SPEER MOT #0680149M01 R6 6.8 k, 1/2 W Resistor (Axial Lead), Vishay Dale (2010) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, , = 3.48 Balun B1, B2 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, , = 10.2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF374A 5-67 MRF374A TYPICAL CHARACTERISTICS 5 0& 7 0& "" 6" 4,*F*&G $! "" "" "" 6"" 7"" 8"" "" 6" 4,*F*&G $! B" B 7 0& B5" B5 B" 5 0& B B" "" "" "" 43/)9@ $! Figure 3. Gain versus Frequency in Broadband Circuit " #2 AA 3A)A0: 3 ) /1A31/3)A<<A0: A3)A449)9@AH 5 7 0& 5" 5 0& "" "" " #2 "" 6" 4,*F*&G $! " "" 6"" 7"" 5 5 0& "" 6" 4,*F*&G $! " "" 43/)9@ $! 922 " 9 22 9,22 " " 5" " " < 3)B</39 1 1< Figure 7. Capacitance versus Voltage MRF374A 5-68 " " A3)A449)9@AHA #2 A 3A)A0: 9 ,22 9%#%&%&*A#4 9 22 9 22 9%#%&%&*A#4 " " 6"" 7"" " 8"" Figure 6. Performance in Broadband Circuit " " "" 43/)9@ $! "" "" 3 " "" 8"" 5" Figure 5. Drain Efficiency versus Frequency in Broadband Circuit " 8"" 7"" Figure 4. Intermodulation Distortion versus Frequency in Broadband Circuit " 6"" 43/)9@ $! " B" 5 0& 7" $! M $ 0* 94$ $ " *%-L.( 3% 5 5" " B B5" B5 B" #2 $3 B " B" " " B " B" "" /1 /1 3 11< Figure 8. COFDM Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $3 )13$/1)A0:& 6 B A3)A449)9@AH 6 #2 AA 3A)A0: $ )13$/1)A<131)A0:& 7 B" 8 5 B 7 5" B5" B5 " #2 B" $3 B " 5 0& 7" $! " " " B" B #2 AA 3A)A0: " $3 )13$/1)A0:& A3)A449)9@AHA #2 A 3A)A0: MRF374A TYPICAL CHARACTERISTICS " 7"" 6 "" "" "" 5 0& 76 $! 4,*F*&G $! 5 B" "" "" Figure 10. Power Gain versus Peak Output Power in Narrowband Circuit B" " "" B B5" "" B5 "" B" B 7"" B" " 5 0& 76 $! 4,*F*&G $! " "" /1 /1 3 11< Figure 11. Intermodulation Distortion versus Peak Output Power in Narrowband Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA A3)A449)9@AH $ )13$/1)A<131)A0:& Figure 9. 8-VSB Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit B " /1 /1 3 11< /1 /1 3 11< " 5" " 5 0& 7"" 76 $! 4,*F*&G $! " " " "" /1 /1 3 11< Figure 12. Drain Efficiency versus Peak Output Power in Narrowband Circuit MRF374A 5-69 MRF374A TYPICAL CHARACTERISTICS VDD = 28 Vdc VDD = 32 Vdc 7 7 7 0& 6" 1 * <#%&( $! 6" $! 6 " $! 6" $! " $! 7" $! 5 0& 6" 1 * <#%&( $! 6 #2 AA 3A)A0: #2 AA 3A)A0: 6 6" $! 6 " $! 6" $! " $! 7" $! " "" /1 /1 3 11< Figure 13. Power Gain versus Peak Output Power in Broadband Circuit " "" /1 /1 3 11< Figure 14. Power Gain versus Peak Output Power in Broadband Circuit 7 0& 6" 1 * <#%&( $! " $! " $! 6" $! 5 0& 6" 1 * <#%&( $! " A3)A449)9@AH A3)A449)9@AH 5 7" $! 7" $ 5" " $! " $! 6" $! " " " " "" /1 /1 3 11< $ )13$/1)A<131)A0:& Figure 15. Drain Efficiency versus Peak Output Power in Broadband Circuit B 7 0& 6" 1 * <#%&( $! B5" " $ B5 7" $ " $ 6" $ B" 6" $ B B" " "" /1 /1 3 11< Figure 17. Intermodulation Distortion versus Peak Output Power in Broadband Circuit MRF374A 5-70 " "" /1 /1 3 11< Figure 16. Drain Efficiency versus Peak Output Power in Broadband Circuit $ )13$/1)A<131)A0:& B 5 0& 6" 1 * <#%&( $! B5" " $ " $ 7" $ B5 B" 6" $ B 6" $ B" " "" /1 /1 3 11< Figure 18. Intermodulation Distortion versus Peak Output Power in Broadband Circuit MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" $! 2 ,&* 6" $! 7 $! 7 $! = %0 = %0 2 ,&* 76 $! 7" $! 76 $! 7" $! 7 "" "" 5 "" 5" f MHz Zsource Zload f MHz Zsource Zload 470 5.79 + j0.97 4.54 - j2.82 845 3.33 - j2.42 4.56 - j2.86 660 4.52 - j0.50 4.21 - j3.04 860 3.03 - j2.39 4.22 - j3.16 860 3.16 - j3.73 3.86 - j3.44 875 2.73 - j3.10 3.87 - j3.52 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 19. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF374A 5-71 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 175 MHz, 7.5 Volts Output Power -- 8 Watts Power Gain -- 11.5 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request < * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. ! 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 62.5 0.5 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 2 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF1511T1 5-72 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 170 A) VGS(th) 1.0 1.6 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.4 -- Vdc Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 100 -- pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 53 -- pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 8 -- pF Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) Gps 10 11.5 -- dB Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1511T1 5-73 97 ; 96 9 3 : : 97 35 96 ; 9 9 9 3 ) 9 34 ) /1 3 9 5 6 7 8 ) " /1 9 98 95 5 9" 9 9 34 /1 /1 95 9 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 1.0 k, 0805 Chip Resistor 33 k, 1/8 W Resistor 0.200 x 0.080 Microstrip 0.755 x 0.080 Microstrip 0.300 x 0.080 Microstrip 0.065 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.095 x 0.080 Microstrip 0.418 x 0.080 Microstrip 1.057 x 0.080 Microstrip 0.120 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) C1, C5, C18 120 pF, 100 mil Chip Capacitor C2, C10, C12 0 to 20 pF, Trimmer Capacitor C3 33 pF, 100 mil Chip Capacitor C4 68 pF, 100 mil Chip Capacitor C6, C15 10 F, 50 V Electrolytic Capacitor C7, C16 1,200 pF, 100 mil Chip Capacitor C8, C17 0.1 F, 100 mil Chip Capacitor C9 150 pF, 100 mil Chip Capacitor C11 43 pF, 100 mil Chip Capacitor C13 24 pF, 100 mil Chip Capacitor C14 300 pF, 100 mil Chip Capacitor L1, L3 12.5 nH, A04T, Coilcraft L2 26 nH, 4 Turn, Coilcraft L4 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz B 6 7 3A) /1A31/3)A<<A0: A/1 /1A 3A11< " $! 5 $! 6 $! B" 5 $! 6 $! B $! B" 6 " " " " "5 " " ) /1 3 11< " Figure 2. Output Power versus Input Power MRF1511T1 5-74 "6 B 5 6 /1 /1 3 11< 7 8 " Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 135 - 175 MHz 6" $! A3)A449)9@AH )A0: 5 $! 6 $! " 7 5 6 7 /1 /1 3 11< " 6 $! " 5" " 8 " " Figure 4. Gain versus Output Power 6 " 5 6 /1 /1 3 11< 7 8 " 7" A3)A449)9@AH " 8 $! 7 5 $! 6 6 $! 6 6 0: "" " "" "" :<) 9/33)1 7"" 6" $! " 6 $! " " """ 5 $! 6 6 0: " Figure 6. Output Power versus Biasing Current 7"" "" "" :<) 9/33)1 """ 7" 6 $! " A3)A449)9@AH 5 $! $! 7 " 6 0: "" Figure 7. Drain Efficiency versus Biasing Current A/1 /1A 3A11< Figure 5. Drain Efficiency versus Output Power A/1 /1A 3A11< 5 $! " 6 $! " 7 " </ @ 1 1< Figure 8. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" $! " 5 $! 6 $! " " 5" " 6 0: 7 " </ @ 1 1< Figure 9. Drain Efficiency versus Supply Voltage MRF1511T1 5-75 97 96 ; 9 : 3 : 9 35 9 9 ; 95 9 3 34 ) /1 3 ) 9 B1, B2 5 9 5 7 ) " 9 98 95 8 /1 9" 34 /1 /1 9 9 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 24 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 380 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 82 nH, Coilcraft 55.5 nH, 5 Turn, Coilcraft 39 nH, 6 Turn, Coilcraft C1, C12 C2 C3, C10 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 C11 L1 L2 L3 6 Type N Flange Mount 15 , 0805 Chip Resistor 51 , 1/2 W Resistor 100 , 0805 Chip Resistor 33 k, 1/8 W Resistor 0.136 x 0.080 Microstrip 0.242 x 0.080 Microstrip 1.032 x 0.080 Microstrip 0.145 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.134 x 0.080 Microstrip 0.490 x 0.080 Microstrip 0.872 x 0.080 Microstrip 0.206 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 10. 66 - 88 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 66 - 88 MHz " " 7 77 $! $! 6 " " " " "5 " " ) /1 3 11< " Figure 11. Output Power versus Input Power MRF1511T1 5-76 6 B 3A) /1A31/3)A<<A0: A/1 /1A 3A11< 66 $! B B B7 77 $! B" B B $! B 66 $! B7 "6 B" 5 6 /1 /1 3 11< 7 8 " Figure 12. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 66 - 88 MHz 7 6" A3)A449)9@AH )A0: " $! 66 $! 77 $! " 5 6 7 /1 /1 3 11< 8 " " 5" " " " 6 Figure 13. Gain versus Output Power 5 6 /1 /1 3 11< 7 8 " 7" " A3)A449)9@AH A/1 /1A 3A11< Figure 14. Drain Efficiency versus Output Power 66 $! 8 77 $! 7 $! 6 6" " 77 $! 66 $! " $! 6 6 0: 6 6 0: " "" "" "" :<) 9/33)1 7"" " """ " Figure 15. Output Power versus Biasing Current "" "" :<) 9/33)1 7"" """ 7" A3)A449)9@AH " 66 $! 7 $! 77 $! " 6 0: "" Figure 16. Drain Efficiency versus Biasing Current A/1 /1A 3A11< $! 66 $! " 6 7 77 $! 6 7 8 </ @ 1 1< Figure 17. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " 6" " 77 $! " 66 $! $! " 5" " 6 0: 6 7 8 " </ @ 1 1< Figure 18. Drain Efficiency versus Supply Voltage MRF1511T1 5-77 6 $! " 66 77 $! 6 $! 5 5 77 $! 66 6 " 7 Zin 6 " 7 f MHz Zin ZOL* f MHz Zin ZOL* 135 20.1 -j0.5 2.53 -j2.61 66 25.3 -j0.31 3.62 -j0.751 155 17.0 +j3.6 3.01 -j2.48 77 25.6 +j3.62 3.59 -j0.129 175 15.2 +j7.9 2.52 -j3.02 88 26.7 +j6.79 3.37 -j0.173 = Complex conjugate of source impedance with parallel 15 resistor and 68 pF capacitor in series with gate. (See Figure 1). Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 24 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 19. Series Equivalent Input and Output Impedance MRF1511T1 5-78 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.88 -165 18.92 95 0.015 8 0.84 -169 50 0.88 -171 11.47 91 0.016 -5 0.84 -173 100 0.87 -175 5.66 85 0.016 -7 0.84 -176 150 0.87 -176 3.75 82 0.015 -5 0.85 -176 200 0.87 -177 2.78 78 0.014 -6 0.84 -176 250 0.87 -177 2.16 75 0.014 -10 0.85 -176 300 0.88 -177 1.77 72 0.012 -17 0.86 -176 350 0.88 -177 1.49 69 0.013 -11 0.86 -176 400 0.88 -177 1.26 66 0.013 -17 0.87 -175 450 0.88 -177 1.08 64 0.011 -20 0.87 -175 500 0.89 -176 0.96 63 0.012 -20 0.88 -175 IDQ = 800 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.89 -166 18.89 95 0.014 10 0.85 -170 50 0.88 -172 11.44 91 0.015 8 0.84 -174 100 0.87 -175 5.65 86 0.016 -2 0.85 -176 150 0.87 -177 3.74 82 0.014 -8 0.84 -177 200 0.87 -177 2.78 78 0.013 -18 0.85 -177 250 0.88 -177 2.16 75 0.012 -11 0.85 -176 300 0.88 -177 1.77 73 0.015 -15 0.86 -176 350 0.88 -177 1.50 70 0.009 -7 0.87 -176 400 0.88 -177 1.26 67 0.012 -3 0.87 -176 450 0.88 -177 1.09 65 0.012 -18 0.87 -175 500 0.89 -177 0.97 64 0.009 -10 0.88 -175 IDQ = 1.5 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.90 -168 17.89 95 0.013 2 0.86 -172 50 0.89 -173 10.76 91 0.013 3 0.86 -175 100 0.88 -176 5.32 86 0.014 -19 0.86 -177 150 0.88 -177 3.53 83 0.013 -6 0.86 -177 200 0.88 -177 2.63 80 0.011 -4 0.86 -177 250 0.88 -178 2.05 77 0.012 -14 0.86 -177 300 0.88 -177 1.69 75 0.013 -2 0.87 -177 350 0.89 -177 1.43 72 0.010 -9 0.87 -176 400 0.89 -177 1.22 70 0.014 -3 0.88 -176 450 0.89 -177 1.06 68 0.011 -8 0.88 -176 500 0.89 -177 0.94 67 0.011 -15 0.88 -176 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1511T1 5-79 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MRF1511T1 5-80 drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MOTOROLA WIRELESS RF PRODUCT DEVICE DATA impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MRF1511T1 5-81 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 3 Watts Power Gain -- 11 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request < * In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. ! 520 MHz, 3 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 PLD-1.5 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 2 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 31.25 0.25 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 4 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MRF1513T1 5-82 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 60 A) VGS(th) 1.0 1.7 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) -- 0.65 -- Vdc Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 33 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 16.5 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.2 -- pF Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1513T1 5-83 98 ; 97 : 96 3 : 35 6 3 34 ) /1 5 7 B1, B2 C1, C13 C2, C3, C4, C10, C11, C12 C5, C6, C17 C7, C14 C8, C15 C9, C16 L1 N1, N2 R1, R3 R2 95 9 8 " ; 9 ) /1 34 /1 /1 95 9" 9 9 9 9 3 ) 9 96 9 9 9 Short Ferrite Beads, Fair Rite Products #2743021446 240 pF, 100 mil Chip Capacitors R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board 0 to 20 pF Trimmer Capacitors 120 pF, 100 mil Chip Capacitors 10 mF, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 mF, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistors (0805) 1 k, 1/8 W Resistor 33 k, 1/8 W Resistor 0.236 x 0.080 Microstrip 0.981 x 0.080 Microstrip 0.240 x 0.080 Microstrip 0.098 x 0.080 Microstrip 0.192 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.705 x 0.080 Microstrip 0.342 x 0.080 Microstrip 0.347 x 0.080 Microstrip 0.846 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz " 0& 3A) /1A31/3)A<<A0: A/1 /1A 3A11< 6" $! " $! " $! "" $! 5 B B" "" $! 6" $! B " $! 0& " " "" "" " ) /1 3 11< Figure 2. Output Power versus Input Power MRF1513T1 5-84 "" B" " $! " 5 /1 /1 3 11< Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 450 - 520 MHz " $! A3)A449)9@AH " $! "" $! )A0: 6" 6" $! 5 " 5 /1 /1 3 11< " " 5" " " A3)A449)9@AH " $! 6" $! "" $! " $! 5 "" "" "" 5"" "" :<) 9/33)1 " 6" $! "" $! " $! " 0& "5 0: 0& "5 0: " " $! " "" " "" Figure 6. Output Power versus Biasing Current "" 5"" "" "" :<) 9/33)1 "" Figure 7. Drain Efficiency versus Biasing Current 7" 5 A3)A449)9@AH A/1 /1A 3A11< 6" " $! " $! 6" $! "" $! "5 0: " " 5 /1 /1 3 11< Figure 5. Drain Efficiency versus Output Power A/1 /1A 3A11< "" $! " Figure 4. Gain versus Output Power " $! 0& 0& " 6" $! " $! 7 8 " 5 </ @ 1 1< Figure 8. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" $! 6" " $! " " $! " "" $! " "5 0: " 5" " 7 8 " 5 </ @ 1 1< Figure 9. Drain Efficiency versus Supply Voltage MRF1513T1 5-85 98 ; 97 : 96 : 3 35 ) 34 ) /1 5 9 ; 95 9 3 3 9 9 6 7 8 ) " /1 9 9" 34 /1 /1 9 9 9 B1, B2 C1, C12 C2, C3, C4, C10, C11 C5, C6, C16 C7, C13 C8, C14 C9, C15 L1 N1, N2 R1 R2 95 9 9 15 Chip Resistor (0805) 33 k, 1/8 W Resistor 0.253 x 0.080 Microstrip 0.958 x 0.080 Microstrip 0.247 x 0.080 Microstrip 0.193 x 0.080 Microstrip 0.132 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.494 x 0.080 Microstrip 0.941 x 0.080 Microstrip 0.452 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products #2743021446 330 pF, 100 mil Chip Capacitors 1 to 20 pF Trimmer Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 mF, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 1 k, 1/8 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz " " $! 6" $! 5 3A) /1A31/3)A<<A0: A/1 /1A 3A11< "" $! 0& B " $! B" "" $! B 0& " " "" "" "" ""7 ) /1 3 11< "" Figure 11. Output Power versus Input Power MRF1513T1 5-86 " B" 6" $! " 5 /1 /1 3 11< Figure 12. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 400 - 470 MHz 6" 7 )A0: A3)A449)9@AH "" $! " $! 5 5 /1 /1 3 11< "" $! " " $! " 5" " 0& " 0& " 6" $! " 6" $! 6 " " Figure 13. Gain versus Output Power 5 /1 /1 3 11< Figure 14. Drain Efficiency versus Output Power 6" A3)A449)9@AH A/1 /1A 3A11< "" $! " $! 6" $! 5 0& 76 0: " "" "" 5"" "" :<) 9/33)1 "" 6" $! " " $! "" $! " 0& 76 0: " "" " "" Figure 15. Output Power versus Biasing Current 7" "" $! " $! A3)A449)9@AH A/1 /1A 3A11< "" "" Figure 16. Drain Efficiency versus Biasing Current 6" $! 5 76 0: " " "" 5"" "" :<) 9/33)1 7 8 " 5 </ @ 1 1< Figure 17. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" 6" $! " " $! "" $! " " 76 0: " 5" " 7 8 " 5 </ @ 1 1< Figure 18. Drain Efficiency versus Supply Voltage MRF1513T1 5-87 98 ; 97 : 96 : 3 35 ) 3 5 6 7 95 9 B1, B2 C1, C13 C2, C4, C10, C12 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C11 L1 L2 L3 9 9 5 34 /1 /1 " 95 8 /1 ) 9" 9 ; 9 9 3 34 ) /1 9 96 9 9 9 L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Beads, Fair Rite Products #2743021446 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 12 pF, 100 mil Chip Capacitor 130 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,000 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 8 nH, 3 Turn, Coilcraft 55.5 nH, 5 Turn, Coilcraft 33 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 W Chip Resistor (0805) 56 W, 1/8 W Chip Resistor 10 W, 1/8 W Chip Resistor 33 kW, 1/8 W Chip Resistor 0.115 x 0.080 Microstrip 0.230 x 0.080 Microstrip 1.034 x 0.080 Microstrip 0.202 x 0.080 Microstrip 0.260 x 0.223 Microstrip 1.088 x 0.080 Microstrip 0.149 x 0.080 Microstrip 0.171 x 0.080 Microstrip 0.095 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz " 6 $! 5 5 $! 3A) /1A31/3)A<<A0: A/1 /1A 3A11< $! " 0& " "" "" " ) /1 3 11< Figure 20. Output Power versus Input Power MRF1513T1 5-88 "" B 5 $! B" $! 6 $! B B" 0& " 5 /1 /1 3 11< Figure 21. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 135 - 175 MHz 7 A3)A449)9@AH 6 $! 5 5 /1 /1 3 11< $! " 6 $! " 5" " 0& " 0& " 5 $! " $! 6 )A0: 6" 5 $! " Figure 22. Gain versus Output Power A3)A449)9@AH A/1 /1A 3A11< 6 $! $! 5 $! 5 0& 8 0: " "" "" "" 5"" "" :<) 9/33)1 6 6 $! 6" $! 5 $! " 0& 8 0: " "" " "" 5"" "" :<) 9/33)1 "" Figure 24. Output Power versus Biasing Current "" "" Figure 25. Drain Efficiency versus Biasing Current 7" 5 A3)A449)9@AH A/1 /1A 3A11< 7" 6 $! 5 $! $! 8 0: " " 5 /1 /1 3 11< Figure 23. Drain Efficiency versus Output Power " 7 8 " 5 </ @ 1 1< Figure 26. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" 5 $! " $! " " 8 0: " 5" 6 $! " 7 8 " 5 </ @ 1 1< Figure 27. Drain Efficiency versus Supply Voltage MRF1513T1 5-89 6" " " $! " $! "" $! 5 " "" $! " 5 6 $! " 6 $! " 5 " 5 Zin 6" " 5 f MHz Zin ZOL* f MHz Zin ZOL* f MHz 450 4.64 +j5.82 13.11 +j2.15 400 4.72 +j4.38 12.57 +j1.88 135 16.55 +j1.82 22.01 +j10.32 470 5.42 +j6.34 12.16 +j3.26 440 4.88 +j6.34 11.21 +j5.87 155 15.59 +j5.38 22.03 +j8.07 500 5.96 +j5.45 11.03 +j5.42 470 3.22 +j5.24 9.82 +j8.63 175 15.55 +j9.43 22.08 +j6.85 520 4.28 +j4.94 10.99 +j7.18 = Complex conjugate of source impedance with parallel 15 resistor and 120 pF capacitor in series with gate. (See Figure 1). Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin Zin ZOL* = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 28. Series Equivalent Input and Output Impedance MRF1513T1 5-90 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 50 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 -94 22.09 125 0.044 33 0.77 -81 100 0.81 -131 12.78 101 0.052 6 0.61 -115 200 0.76 -153 6.31 81 0.047 -10 0.59 -135 300 0.76 -160 3.92 69 0.044 -19 0.64 -142 400 0.77 -164 2.74 60 0.040 -26 0.70 -147 500 0.79 -167 1.99 54 0.036 -31 0.75 -151 600 0.80 -169 1.55 48 0.034 -37 0.80 -155 700 0.81 -171 1.25 44 0.028 -40 0.82 -158 800 0.82 -172 1.02 38 0.027 -42 0.86 -161 900 0.83 -173 0.85 35 0.017 -42 0.88 -163 1000 0.84 -175 0.70 29 0.018 -49 0.91 -166 IDQ = 500 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.84 -127 32.57 112 0.025 17 0.64 -130 100 0.80 -152 17.23 97 0.025 13 0.64 -153 200 0.78 -166 8.62 85 0.025 -9 0.65 -163 300 0.78 -171 5.58 79 0.023 -9 0.67 -166 400 0.78 -173 4.08 72 0.022 -9 0.69 -166 500 0.78 -175 3.14 68 0.020 -10 0.71 -167 600 0.79 -176 2.55 63 0.022 -15 0.74 -168 700 0.79 -177 2.14 60 0.019 -20 0.76 -168 800 0.80 -178 1.80 54 0.018 -31 0.79 -170 900 0.81 -178 1.54 51 0.015 -25 0.80 -170 1000 0.82 -179 1.31 46 0.012 -36 0.81 -172 IDQ = 1 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.84 -129 32.57 111 0.023 24 0.61 -137 100 0.80 -153 17.04 97 0.024 13 0.64 -156 200 0.78 -167 8.52 85 0.023 5 0.65 -165 300 0.77 -172 5.53 79 0.020 -7 0.67 -167 400 0.77 -174 4.06 73 0.020 -11 0.69 -167 500 0.78 -175 3.13 69 0.021 -9 0.72 -167 600 0.78 -177 2.54 64 0.017 -26 0.74 -168 700 0.78 -177 2.13 60 0.017 -14 0.75 -168 800 0.79 -178 1.81 55 0.015 -23 0.78 -170 900 0.80 -178 1.54 51 0.013 -31 0.79 -170 1000 0.80 -179 1.30 46 0.011 -17 0.80 -172 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1513T1 5-91 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MRF1513T1 5-92 drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOUNTING The specified maximum thermal resistance of 4C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MOTOROLA WIRELESS RF PRODUCT DEVICE DATA impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MRF1513T1 5-93 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 520 MHz, 7.5 Volts Output Power -- 8 Watts Power Gain -- 11 dB Efficiency -- 55% * Characterized with Series Equivalent Large-Signal Impedance Parameters * Excellent Thermal Stability * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request * RF Power Plastic Surface Mount Package * Available in Tape and Reel. < T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. ! 520 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage (1) VDSS 25 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (2) Derate above 25C PD 62.5 0.50 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 2 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. (2) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF1517T1 5-94 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 120 Adc) VGS(th) 1.0 1.7 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.5 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 0.9 -- -- S Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 66 -- pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 38 -- pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 6 -- pF Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1517T1 5-95 : 98 ; 96 97 35 : 97 3 ) 5 6 7 B1, B2 C1 C2, C3, C4, C10, C12, C13 C5, C11 C6, C18 C7, C15 C8, C16 C9, C17 C14 L1 N1, N2 95 9 ; 9 ) " 9 9" 9 9 9 9 8 /1 9 9 3 34 ) /1 96 34 /1 /1 95 9 Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.315 x 0.080 Microstrip 1.415 x 0.080 Microstrip 0.322 x 0.080 Microstrip 0.022 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.625 x 0.080 Microstrip 0.800 x 0.080 Microstrip 0.589 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 0 to 20 pF, Trimmer Capacitor 43 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 1. 480 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 480 - 520 MHz " "" $! " $! 7" $! 7 3A) /1A31/3)A<<A0: A/1 /1A 3A11< " B B" 7" $! " $! B "" $! B" 6 0& " " " " " ) /1 3 11< "7 Figure 2. Output Power versus Input Power MRF1517T1 5-96 6 0& " B 5 6 7 /1 /1 3 11< 8 " Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 480 - 520 MHz 7 7" "" $! 7" $! 6" " $! )A0: A3)A449)9@AH " 7 6 7 /1 /1 3 11< 5 8 " " 5" " " 6 0& 7 " $! A3)A449)9@AH "" $! 8 " 7" $! Pin = 27 dBm 6 0& " "" "" "" :<) 9/33)1 7"" "" $! " " $! " " 5" """ 7" $! 6" Pin = 27 dBm 6 0& " Figure 6. Output Power versus Biasing Current "" "" "" :<) 9/33)1 7"" """ Figure 7. Drain Efficiency versus Biasing Current 7" " A3)A449)9@AH A/1 /1A 3A11< 6 7 /1 /1 3 11< 7" " "" $! 7 " $! 7" $! " 5 Figure 5. Drain Efficiency versus Output Power A/1 /1A 3A11< " $! " Figure 4. Gain versus Output Power " "" $! " 6 0& 7" $! Pin = 27 dBm " 6 7 8 " </ @ 1 1< Figure 8. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 7" $! 6" "" $! " " $! " " 5" Pin = 27 dBm " 6 7 8 " </ @ 1 1< Figure 9. Drain Efficiency versus Supply Voltage MRF1517T1 5-97 : 97 96 ; 9 : 35 96 3 34 ) /1 5 B1, B2 C1, C13 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 L1 N1, N2 95 6 7 ; 9 ) 8 /1 34 /1 /1 95 9" 9 9 9 9 3 ) 9 98 9 9 9 12 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.617 x 0.080 Microstrip 0.723 x 0.080 Microstrip 0.513 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.048 x 0.080 Microstrip 0.577 x 0.080 Microstrip 1.135 x 0.080 Microstrip 0.076 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 10. 400 - 440 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 440 MHz " " "" $! 7 3A) /1A31/3)A<<A0: A/1 /1A 3A11< 8 " $! 6 " $! 5 " 6 0& " " " "5 ) /1 3 11< " " Figure 11. Output Power versus Input Power MRF1517T1 5-98 B "" $! B" " $! B " $! B" B 6 0& 5 6 /1 /1 3 11< 7 8 " Figure 12. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 400 - 440 MHz 6" 6 " $! )A0: " $! "" $! 5 8 6 5 6 7 /1 /1 3 11< 8 " $! " " "" $! 5" " " 6 0& " " Figure 13. Gain versus Output Power 7 " $! " $! A3)A449)9@AH A/1 /1A 3A11< "" $! Pin = 25.5 dBm 6 0& " "" "" "" :<) 9/33)1 7"" 5 6 7 /1 /1 3 11< 8 " 6" " $! " " $! "" $! " " 5" """ Figure 15. Output Power versus Biasing Current Pin = 25.5 dBm 6 0& " "" "" "" :<) 9/33)1 7"" """ Figure 16. Drain Efficiency versus Biasing Current 7" " " $! "" $! 7 A3)A449)9@AH A/1 /1A 3A11< 7" " " $! " 6 0& Figure 14. Drain Efficiency versus Output Power " " $! " A3)A449)9@AH Pin = 25.5 dBm " 6 7 8 " </ @ 1 1< Figure 17. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" " $! " " $! "" $! " " 5" Pin = 25.5 dBm " 6 7 8 " </ @ 1 1< Figure 18. Drain Efficiency versus Supply Voltage MRF1517T1 5-99 : 97 96 ; 9 35 : 3 34 ) /1 5 B1, B2 C1 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 C13 L1 N1, N2 95 6 7 ; 9 ) 8 /1 95 9" 9 9 9 9 3 ) 9 96 98 9 34 /1 /1 9 9 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.471 x 0.080 Microstrip 1.082 x 0.080 Microstrip 0.372 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.551 x 0.080 Microstrip 0.825 x 0.080 Microstrip 0.489 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 mF, 50 V Electrolytic Capacitor 0.1 mF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 19. 440 - 480 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 440 - 480 MHz " " 7 3A) /1A31/3)A<<A0: A/1 /1A 3A11< 8 " $! 6 " $! 7" $! 5 " B B" " $! " $! B 7" $! B" 6 0& " "" " " ) /1 3 11< 6 0& "7 Figure 20. Output Power versus Input Power MRF1517T1 5-100 B 5 6 /1 /1 3 11< 7 8 " Figure 21. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 440 - 480 MHz 6" 6 " $! " $! )A0: 5 7" $! 8 6 5 6 7 /1 /1 3 11< 5" " 8 " " " $! " A3)A449)9@AH A/1 /1A 3A11< 5 6 7 /1 /1 3 11< 8 " 7" 7" $! 7 " $! Pin = 27.5 dBm " "" "" "" :<) 9/33)1 7"" 6" 7" $! " " $! " 5" """ " $! " Figure 24. Output Power versus Biasing Current Pin = 27.5 dBm " "" "" "" :<) 9/33)1 7"" """ Figure 25. Drain Efficiency versus Biasing Current 7" " A3)A449)9@AH A/1 /1A 3A11< 6 0& Figure 23. Drain Efficiency versus Output Power " $! 7 " $! 7" $! Pin = 27.5 dBm " " $! " Figure 22. Gain versus Output Power " 7" $! " " 6 0& " $! " A3)A449)9@AH 6 7 8 " </ @ 1 1< Figure 26. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" 7" $! " " $! " $! " " 5" Pin = 27.5 dBm 6 7 8 " </ @ 1 1< Figure 27. Drain Efficiency versus Supply Voltage MRF1517T1 5-101 " " $! " $! 7" "" 7" $! " 7" $! " $! " 7" $! "" Zin " " " 6 " 7 6 " 7 6 " 7 f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 480 1.06 +j1.82 3.51 +j0.99 440 1.62 +j3.41 3.25 +j0.98 400 1.96 +j3.32 2.52 +j0.39 500 0.97 +j2.01 2.82 +j0.75 460 1.85 +j3.35 3.05 +j0.93 420 2.31 +j3.56 2.61 +j0.64 520 0.975 +j2.37 1.87 +j1.03 480 1.91 +j3.31 2.54 +j0.84 440 1.60 +j3.45 2.37 +j1.04 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 28. Series Equivalent Input and Output Impedance MRF1517T1 5-102 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz MH S11 S21 S12 S22 |S11| |S21| |S12| |S22| 50 0.84 -152 17.66 97 0.016 0 0.77 -167 100 0.84 -164 8.86 85 0.016 5 0.78 -172 200 0.86 -170 4.17 72 0.015 -5 0.79 -173 300 0.88 -171 2.54 62 0.014 -8 0.80 -172 400 0.90 -172 1.72 55 0.013 -25 0.83 -172 500 0.92 -172 1.28 50 0.013 -10 0.84 -172 600 0.94 -173 0.98 46 0.014 -22 0.86 -171 700 0.95 -173 0.76 41 0.010 -30 0.86 -172 800 0.96 -174 0.61 38 0.011 -14 0.86 -171 900 0.96 -175 0.50 33 0.011 -31 0.85 -172 1000 0.97 -175 0.40 31 0.006 55 0.88 -171 IDQ = 800 mA f MH MHz S11 S21 S12 S22 |S11| |S21| |S12| |S22| 50 0.90 -165 20.42 94 0.018 1 0.76 -164 100 0.89 -172 10.20 87 0.015 -7 0.77 -170 200 0.90 -175 4.96 79 0.015 -12 0.77 -172 300 0.90 -176 3.17 73 0.017 -2 0.80 -171 400 0.91 -176 2.26 67 0.013 1 0.82 -172 500 0.92 -176 1.75 63 0.011 -6 0.83 -171 600 0.93 -176 1.39 59 0.012 -31 0.85 -171 700 0.94 -176 1.14 55 0.015 -34 0.88 -171 800 0.94 -176 0.93 51 0.008 -22 0.87 -171 900 0.95 -177 0.78 45 0.007 2 0.87 -172 1000 0.96 -177 0.65 43 0.008 -40 0.90 -170 IDQ = 1.5 A f MH MHz S11 S21 S12 S22 |S11| |S21| |S12| |S22| 50 0.92 -165 19.90 95 0.017 3 0.76 -164 100 0.90 -172 9.93 88 0.018 2 0.77 -170 200 0.91 -176 4.84 80 0.016 -4 0.77 -172 300 0.91 -176 3.10 74 0.014 -11 0.80 -172 400 0.92 -176 2.22 68 0.014 -14 0.81 -172 500 0.93 -176 1.73 64 0.016 -8 0.83 -171 600 0.94 -176 1.39 61 0.013 -24 0.85 -171 700 0.94 -176 1.12 56 0.013 -24 0.87 -171 800 0.95 -176 0.93 52 0.009 -12 0.87 -171 900 0.96 -177 0.78 46 0.008 10 0.87 -173 1000 0.97 -177 0.64 44 0.012 4 0.89 -169 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1517T1 5-103 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MRF1517T1 5-104 drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MOTOROLA WIRELESS RF PRODUCT DEVICE DATA impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MRF1517T1 5-105 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 8 Watts Power Gain -- 11 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * RF Power Plastic Surface Mount Package * Broadband UHF/VHF Demonstration Amplifier < Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. ! 520 MHz, 8 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 62.5 0.50 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 2 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF1518T1 5-106 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 100 A) VGS(th) 1.0 1.6 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.4 -- Vdc Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 66 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 33 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 4.5 -- pF Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1518T1 5-107 97 ; 96 : 9 3 : 35 3 34 ) /1 3 ) 5 9 9 6 7 8 B1, B2 9 9" 34 /1 /1 9 9 Short Ferrite Beads, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 82 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 mF, 100 mil Chip Capacitors 30 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 51 , 1/2 W Resistor 10 Chip Resistor (0805) C1, C12 C2, C3, C10, C11 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 L1 N1, N2 R1 R2 R3 ) " /1 9 95 95 9 98 9 ; 9 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 33 k, 1/8 W Resistor 0.451 x 0.080 Microstrip 1.005 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.155 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.065 x 0.080 Microstrip 0.266 x 0.080 Microstrip 1.113 x 0.080 Microstrip 0.433 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz " " 6" $! 7 3A) /1A31/3)A<<A0: A/1 /1A 3A11< " $! "" $! " $! " 0& " " "5 " " ) /1 3 11< " Figure 2. Output Power versus Input Power MRF1518T1 5-108 " 0& B 6" $! B" " $! "" $! B " $! B" " 6 7 5 /1 /1 3 11< 8 " Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 450 - 520 MHz 6 7" 6" $! " $! 5 )A0: A3)A449)9@AH " $! "" $! 8 6 6 7 5 /1 /1 3 11< 8 " " " " " 0& " A3)A449)9@AH " $! 7 " $! "" $! 0& 0: "" " 6" $! 7"" "" "" :<) 9/33)1 " $! " 6" $! " $! " " 0& 0: 5 5" """ " "" 7" " $! A3)A449)9@AH 7 6 " $! "" $! " 0: 7 8 " 5 </ @ 1 1< Figure 8. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA """ 6 8 7"" "" "" :<) 9/33)1 Figure 7. Drain Efficiency versus Biasing Current " "" $! Figure 6. Output Power versus Biasing Current A/1 /1A 3A11< " 6" " 6" $! 5 5 6 7 8 /1 /1 3 11< Figure 5. Drain Efficiency versus Output Power A/1 /1A 3A11< "" $! 5" Figure 4. Gain versus Output Power " " $! " " 0& " 6" $! " $! 6" 6" 6" $! " $! " " $! "" $! " " 5 5" " 0: 7 8 " 5 </ @ 1 1< Figure 9. Drain Efficiency versus Supply Voltage MRF1518T1 5-109 9" ; 98 : 97 : 3 97 35 96 3 ) 34 ) /1 5 9 96 3 ; 9 6 7 8 " ) /1 9 9 9 34 /1 /1 95 9 9 B1, B2 C1, C14 C2, C3, C4, C11, C12, C13 C5 C6 C7, C18 C8, C15 C9, C16 C10, C17 L1 N1, N2 R1 R2 95 9 9 9 10 Chip Resistor (0805) 33 k, 1/8 W Resistor 0.476 x 0.080 Microstrip 0.724 x 0.080 Microstrip 0.348 x 0.080 Microstrip 0.048 x 0.080 Microstrip 0.175 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.239 x 0.080 Microstrip 0.286 x 0.080 Microstrip 0.806 x 0.080 Microstrip 0.553 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board Short Ferrite Beads, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 30 pF, 100 mil Chip Capacitor 47 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 51 , 1/2 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz " " 3A) /1A31/3)A<<A0: A/1 /1A 3A11< " $! "" $! 7 6" $! 0& " 0& B " $! B" "" $! B 6" $! " " "5 " " " ) /1 3 11< " Figure 11. Output Power versus Input Power MRF1518T1 5-110 "6 B" " 5 6 7 8 /1 /1 3 11< " Figure 12. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 400 - 470 MHz 7" 6 6" )A0: 5 "" $! A3)A449)9@AH " $! 6" $! 8 0& 6 "" $! " " 5" " 0& " " 5 6 7 8 /1 /1 3 11< " " " Figure 13. Gain versus Output Power 6" $! 0& 7 0: " "" " "" "" :<) 9/33)1 7"" "" $! " 0& 7 0: " " 7" 6 6" $! 5 8 " 5 </ @ 1 1< Figure 17. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" 6" $! " " $! " "" $! " " 7 0: 7 """ 7"" 6 7 "" "" :<) 9/33)1 "" Figure 16. Drain Efficiency versus Biasing Current "" $! 8 " 5" """ A3)A449)9@AH A/1 /1A 3A11< " 5 " $! " " $! Figure 15. Output Power versus Biasing Current 6 7 8 5 /1 /1 3 11< 6" $! "" $! 7 6" " $! " Figure 14. Drain Efficiency versus Output Power A3)A449)9@AH A/1 /1A 3A11< " $! 6" $! " 5 5" " 7 0: 7 8 " 5 </ @ 1 1< Figure 18. Drain Efficiency versus Supply Voltage MRF1518T1 5-111 98 ; 97 : 96 3 : 35 ) 3 5 6 7 5 9 95 9 B1, B2 9 8 34 /1 /1 " 95 ) 9 9 9 L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Beads, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 12 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 75 pF, 100 mil Chip Capacitor 13 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 5 nH, 2 Turn, Coilcraft 33 nH, 5 Turn, Coilcraft C1, C13 C2, C4, C11 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C10 C12 L1 L2 L3 ; /1 9" 9 9 9 3 34 ) /1 9 96 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 W Chip Resistor (0805) 56 W, 1/4 W Carbon Resistor 100 W Chip Resistor (0805) 33 kW, 1/8 W Carbon Resistor 0.115 x 0.080 Microstrip 0.255 x 0.080 Microstrip 1.037 x 0.080 Microstrip 0.192 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.125 x 0.080 Microstrip 0.962 x 0.080 Microstrip 0.305 x 0.080 Microstrip 0.155 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz " 0& " 7 3A) /1A31/3)A<<A0: A/1 /1A 3A11< $! 6 $! 5 $! " 0& " " " "5 ) /1 3 11< Figure 20. Output Power versus Input Power MRF1518T1 5-112 " B $! B" 5 $! 6 $! B B" " 5 6 7 8 /1 /1 3 11< " Figure 21. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 135 - 175 MHz 8 7" 5 $! 6" A3)A449)9@AH 6 6 $! )A0: $! 5 8 6 5 6 7 8 /1 /1 3 11< " 5 $! " 6 $! " 5" " 0& " 0& " $! " " " Figure 22. Gain versus Output Power 7 0& 0: " " "" 7"" "" "" :<) 9/33)1 " " " 5" """ 0& 0: "" " A3)A449)9@AH A/1 /1A 3A11< 6 7 6 " 0: 5 7 8 " 5 </ @ 1 1< Figure 26. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA """ 7"" 7" 6 $! 8 "" "" :<) 9/33)1 Figure 25. Drain Efficiency versus Biasing Current $! " 6 $! 5 5 $! Figure 24. Output Power versus Biasing Current " $! 5 $! 5 $! $! 6 7 5 8 /1 /1 3 11< 6" 6 $! " Figure 23. Drain Efficiency versus Output Power A3)A449)9@AH A/1 /1A 3A11< 6" $! 5 $! " 6 $! " " 0: " 5 5" 7 8 " 5 </ @ 1 1< Figure 27. Drain Efficiency versus Supply Voltage MRF1518T1 5-113 " 6" $! " " " $! " $! "" "" 6" $! 5 6 $! 6 " 5 $! " 7 " 7 Zin " 7 f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 450 4.9 +j2.85 6.42 +j3.23 400 4.28 +j2.36 4.41 +j0.67 135 18.31 -j0.76 8.97 +j2.62 470 4.85 +j3.71 4.59 +j3.61 440 6.45 +j5.13 4.14 +j2.53 155 17.72 +j1.85 9.69 +j2.81 500 4.63 +j3.84 4.72 +j3.12 470 5.91 +j3.34 3.92 +j4.02 175 18.06 +j5.23 7.94 +j1.14 520 3.52 +j3.92 3.81 +j3.27 Zin = Complex conjugate of source impedance with parallel 15 resistor and 82 pF capacitor in series with gate. (See Figure 1). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 47 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance with parallel 15 resistor and 43 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 28. Series Equivalent Input and Output Impedance MRF1518T1 5-114 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 150 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.88 -148 18.91 99 0.033 11 0.67 -144 100 0.85 -163 9.40 86 0.033 -6 0.66 -158 200 0.85 -170 4.47 73 0.026 -17 0.69 -162 300 0.87 -171 2.72 64 0.025 -28 0.74 -163 400 0.88 -172 1.85 56 0.021 -21 0.79 -164 500 0.90 -173 1.35 52 0.019 -30 0.83 -165 600 0.92 -173 1.04 47 0.014 -26 0.85 -167 700 0.93 -174 0.83 44 0.015 -39 0.88 -168 800 0.94 -175 0.68 39 0.014 -31 0.90 -169 900 0.94 -175 0.55 36 0.010 -41 0.91 -170 1000 0.96 -176 0.46 30 0.011 -38 0.95 -170 IDQ = 800 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.90 -159 20.80 97 0.020 14 0.73 -162 100 0.88 -169 10.35 88 0.018 1 0.74 -169 200 0.88 -174 5.09 79 0.017 -9 0.75 -171 300 0.89 -175 3.23 73 0.015 -18 0.77 -171 400 0.89 -175 2.30 67 0.015 -17 0.80 -171 500 0.90 -176 1.74 63 0.014 -22 0.82 -170 600 0.91 -176 1.39 59 0.014 -19 0.83 -171 700 0.92 -176 1.16 55 0.009 -23 0.85 -171 800 0.93 -176 0.96 50 0.011 -14 0.87 -172 900 0.94 -177 0.80 46 0.007 4 0.88 -173 1000 0.94 -177 0.67 41 0.010 -15 0.89 -173 IDQ = 1.5 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.91 -159 20.18 97 0.015 11 0.73 -165 100 0.89 -169 10.05 89 0.016 -5 0.74 -171 200 0.88 -174 4.93 80 0.015 -3 0.75 -172 300 0.89 -175 3.14 73 0.014 -14 0.78 -172 400 0.89 -176 2.24 67 0.014 -20 0.80 -171 500 0.90 -176 1.70 64 0.014 -22 0.82 -170 600 0.92 -176 1.36 59 0.010 -16 0.84 -171 700 0.92 -176 1.13 55 0.013 -10 0.85 -171 800 0.93 -177 0.94 50 0.008 -13 0.87 -172 900 0.94 -177 0.78 46 0.013 -26 0.87 -173 1000 0.94 -178 0.65 41 0.007 8 0.87 -172 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1518T1 5-115 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MRF1518T1 5-116 drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MOTOROLA WIRELESS RF PRODUCT DEVICE DATA impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MRF1518T1 5-117 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 35 Watts Power Gain -- 10.0 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz 450-520 MHz * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. !! !! 520 MHz, 35 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1264-08, STYLE 1 TO-272 PLASTIC MRF1535T1 CASE 1264A-02, STYLE 1 TO-272 STRAIGHT LEAD PLASTIC MRF1535FT1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 6 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 135 0.50 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 175 C Symbol Max Unit RJC 0.90 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MRF1535T1 MRF1535FT1 5-118 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS -- -- 0.3 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 400 A) VGS(th) 1 -- 2.6 Vdc Drain-Source On-Voltage (VGS = 5 Vdc, ID = 0.6 A) RDS(on) -- -- 0.7 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) -- -- 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss -- -- 250 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss -- -- 150 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss -- -- 20 pF 10 -- -- 50 -- -- Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA) f = 520 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA) f = 520 MHz Gps Load Mismatch (VDD = 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dB % No Degradation in Output Power Before and After Test MRF1535T1 MRF1535FT1 5-119 9 ; 9" 3 : 95 35 ; 9 9 98 3 34 ) /1 ) 9 3 9 95 5 9 B1 C1, C9, C20, C23 C2, C5 C3, C15 C4, C6, C19 C7 C8 C10, C21 C11, C22 C12, C13 C14 C16 C17 C18 L1 L2 L3 9 9 96 /1 6 9 97 95 7 9 L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Ferroxcube #VK200 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 33 pF, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 150 pF, 100 mil Chip Capacitors 110 pF, 100 mil Chip Capacitor 68 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 51 pF, 100 mil Chip Capacitor 17.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #26 AWG, 0.250 ID 9 8 5 9 96 97 " 34 /1 /1 ) 9" 98 1 Turn, #26 AWG, 0.240 ID 4 Turn, #24 AWG, 0.180 ID Type N Flange Mounts 6.5 , 1/4 W Chip Resistor 39 Chip Resistor (0805) 1.2 k, 1/8 W Chip Resistor 33 k, 1/4 W Chip Resistor 0.970 x 0.080 Microstrip 0.380 x 0.080 Microstrip 0.190 x 0.080 Microstrip 0.160 x 0.080 Microstrip 0.110 x 0.200 Microstrip 0.490 x 0.080 Microstrip 0.250 x 0.080 Microstrip 0.320 x 0.080 Microstrip 0.240 x 0.080 Microstrip Glass Teflon, 31 mils Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz " $! 5 $! 6 $! " " 3A) /1A31/3)A<<A0: A/1 /1A 3A11< " 5" " " B $! 5 $! 6 $! B" B 0& 0& " " 5 ) /1 3 11< Figure 2. Output Power versus Input Power MRF1535T1 MRF1535FT1 5-120 B" " " 5" " " " /1 /1 3 11< Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 135 - 175 MHz 8 7" 0& 7 $! hA3)A449)9@AH )A0: 6 5 $! 6 $! " " 5" " 6 $! " " " 5" " " " 5" /1 /1 3 11< " " hA3)A449)9@AH $! 6 $! " 5 $! 5 $! 6" 6 $! " 5 $! " 0& 5" 0: "" "" "" 7"" """ " "" 0& 5" 0: "" "" :<) 9/33)1 "" 7"" """ "" :<) 9/33)1 Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 6" 7" " hA3)A449)9@AH " $! 6 $! 5 $! " 5" " " 7" 7" 5" 6" Figure 5. Drain Efficiency versus Output Power " A/1 /1A 3A11< " /1 /1 3 11< Figure 4. Gain versus Output Power A/1 /1A 3A11< 5 $! 0& 5 $! " 6" " 5" 0: " 5 </ @ 1 1< Figure 8. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 5 $! 6" 6 $! " $! " " " 5" 0: " 5 </ @ 1 1< Figure 9. Drain Efficiency versus Supply Voltage MRF1535T1 MRF1535FT1 5-121 : 9 95 ; 9 9 35 3 9 34 ) /1 9 B1 C1 C2 C3 C4 C5 C6, C7 C8, C15, C16 C9 C10, C14, C25 C11, C22 C12, C24 C13, C23 C17, C18 C19 C20 5 9 95 95 ; 9 9" 3 ) 9 9 /1 9 9 96 97 6 9 98 C21 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z8 Z6, Z7 Z9 Z10 Board Ferroxcube VK200 160 pF, 100 mil Chip Capacitor 3 pF, 100 mil Chip Capacitor 3.6 pF, 100 mil Chip Capacitor 2.2 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 16 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 43 pF, 100 mil Chip Capacitor 160 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 8.2 pF, 100 mil Chip Capacitor 8 7 96 9 97 98 ) " 9" 34 /1 /1 9 1.8 pF, 100 mil Chip Capacitor 47.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 500 Chip Resistor (0805) 1 k Chip Resistor (0805) 33 k, 1/8 W Chip Resistor 0.480 x 0.080 Microstrip 1.070 x 0.080 Microstrip 0.290 x 0.080 Microstrip 0.160 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.120 x 0.223 Microstrip 1.380 x 0.080 Microstrip 0.625 x 0.080 Microstrip Glass Teflon, 31 mils Figure 10. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz " " $! " 3A) /1A31/3)A<<A0: A/1 /1A 3A11< " "" $! " 6" $! " $! 5" " " " 0& B " $! B" 6" $! " $! "" $! 0& " 5 B " " " 5" " " " ) /1 3 11< /1 /1 3 11< Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MRF1535T1 MRF1535FT1 5-122 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 450 - 520 MHz 6" 6" $! )A0: hA3)A449)9@AH 5 " $! " 8 " $! " " $! 0& " " 5" " " " " 5" 0& " " " " /1 /1 3 11< 5" " " " Figure 14. Drain Efficiency versus Output Power " 7" " $! hA3)A449)9@AH A/1 /1A 3A11< " /1 /1 3 11< Figure 13. Gain versus Output Power 6" $! "" $! " " $! 5 6" "" $! " $! " " $! 6" $! " 0& 5 0: 5" "" "" "" 7"" """ 0& 5 0: " "" "" "" :<) 9/33)1 "" 7"" """ "" :<) 9/33)1 Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current 7" 6" " hA3)A449)9@AH A/1 /1A 3A11< " $! 6" $! "" $! " "" $! " " $! " 5" " $! "" $! 6" $! " 5 0: " " " 5 </ @ 1 1< Figure 17. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" " $! " " $! 6" $! " " "" $! " 5 0: " 5 </ @ 1 1< Figure 18. Drain Efficiency versus Supply Voltage MRF1535T1 MRF1535FT1 5-123 " 6 $! 6 $! 5 $! 5 $! " $! " $! " $! " $! "" 5 " 5 Zin f MHz Zin ZOL* f MHz Zin ZOL* 135 5.0 + j0.9 1.7 + j0.2 450 0.8 - j1.4 1.0 - j0.8 155 5.0 + j0.9 1.7 + j0.2 470 0.9 - j1.4 1.1 - j0.6 175 3.0 + j1.0 1.3 + j0.1 500 1.0 - j1.4 1.1 - j0.6 520 0.9 - j1.4 1.1 - j0.5 = Complex conjugate of source impedance. Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 19. Series Equivalent Input and Output Impedance MRF1535T1 MRF1535FT1 5-124 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 250 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.89 -173 8.496 83 0.014 -26 0.76 -170 100 0.90 -175 3.936 72 0.014 -14 0.79 -170 150 0.91 -175 2.429 63 0.011 -23 0.82 -170 200 0.92 -175 1.627 57 0.010 -44 0.86 -170 250 0.94 -176 1.186 53 0.007 -16 0.88 -170 300 0.95 -176 0.888 49 0.005 -44 0.91 -171 350 0.96 -176 0.686 48 0.005 36 0.92 -170 400 0.96 -176 0.568 44 0.005 -1 0.94 -171 450 0.97 -176 0.457 44 0.004 49 0.94 -172 500 0.97 -176 0.394 44 0.003 -51 0.95 -171 550 0.98 -176 0.332 42 0.001 31 0.95 -173 600 0.98 -177 0.286 41 0.013 99 0.94 -173 IDQ = 1.0 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.90 -173 8.49 83 0.006 -39 0.86 -176 100 0.90 -175 3.92 72 0.009 -5 0.86 -176 150 0.91 -175 2.44 63 0.006 7 0.87 -176 200 0.92 -175 1.62 57 0.008 21 0.88 -175 250 0.94 -176 1.19 53 0.006 8 0.89 -174 300 0.95 -176 0.89 48 0.008 3 0.89 -174 350 0.96 -176 0.69 48 0.007 48 0.91 -174 400 0.96 -176 0.57 44 0.004 41 0.93 -173 450 0.97 -176 0.46 44 0.004 43 0.93 -173 500 0.97 -176 0.39 44 0.003 57 0.94 -173 550 0.98 -176 0.33 41 0.006 62 0.94 -174 600 0.98 -177 0.28 41 0.009 96 0.93 -173 IDQ = 2.0 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.94 -176 9.42 88 0.005 -72 0.89 -177 100 0.94 -178 4.56 82 0.005 4 0.89 -177 150 0.94 -178 2.99 78 0.003 7 0.89 -177 200 0.94 -178 2.14 74 0.005 17 0.90 -176 250 0.95 -178 1.67 71 0.004 40 0.90 -175 300 0.95 -178 1.32 67 0.007 35 0.91 -175 350 0.95 -178 1.08 67 0.005 57 0.92 -174 400 0.96 -178 0.93 63 0.003 50 0.93 -173 450 0.96 -178 0.78 62 0.007 68 0.93 -173 500 0.96 -177 0.68 61 0.004 99 0.94 -173 550 0.97 -177 0.59 58 0.008 78 0.93 -175 600 0.97 -178 0.51 57 0.009 92 0.92 -174 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1535T1 MRF1535FT1 5-125 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MRF1535T1 MRF1535FT1 5-126 drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MOUNTING The specified maximum thermal resistance of 0.9C/W assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MOTOROLA WIRELESS RF PRODUCT DEVICE DATA impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MRF1535T1 MRF1535FT1 5-127 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 175 MHz, 12.5 Volts Output Power -- 50 Watts Power Gain -- 12 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz * Broadband Demonstration Amplifier Information Available Upon Request * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. !!" !!" 175 MHz, 50 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1264-08, STYLE 1 TO-272 PLASTIC MRF1550T1 CASE 1264A-02, STYLE 1 TO-272 STRAIGHT LEAD PLASTIC MRF1550FT1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 12 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 165 0.50 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 175 C Symbol Max Unit RJC 0.75 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MRF1550T1 MRF1550FT1 5-128 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS -- -- 0.5 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 800 A) VGS(th) 1 -- 3 Vdc Drain-Source On-Voltage (VGS = 5 Vdc, ID = 1.2 A) RDS(on) -- -- 0.5 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 4.0 Adc) VDS(on) -- -- 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss -- -- 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss -- -- 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss -- -- 35 pF 10 -- -- 50 -- -- Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Gps Drain Efficiency (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Load Mismatch (VDD = 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dB % No Degradation in Output Power Before and After Test MRF1550T1 MRF1550FT1 5-129 9" 98 97 ; 3 9" 9 35 98 97 8 95 9 ; 96 3 3 34 ) /1 ) 9 5 95 B1 C1 C2 C3 C4, C16 C5 C6 C7, C17 C8, C18 C9, C19 C10 C11, C12 C13 C14 C15 C20 L1 L2 L3 9 7 9 9 5 " 96 ) /1 9 9 6 9 34 /1 /1 9 9 L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Z11 Board Ferroxcube #VK200 180 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 0.1 F, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitor 200 pF, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitor 6.8 pF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 18.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #24 AWG, 0.250 ID 1 Turn, #26 AWG, 0.240 ID 3 Turn, #24 AWG, 0.180 ID Type N Flange Mounts 5.1 , 1/4 W Chip Resistor 39 Chip Resistor (0805) 1 k, 1/8 W Chip Resistor 33 k, 1/4 W Chip Resistor 1.000 x 0.080 Microstrip 0.400 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.100 x 0.223 Microstrip 0.160 x 0.080 Microstrip 0.260 x 0.080 Microstrip 0.280 x 0.080 Microstrip 0.270 x 0.080 Microstrip 0.730 x 0.080 Microstrip Glass Teflon, 31 mils Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS " 5 $! 6" 0& 3A) /1A31/3)A<<A0: A/1 /1A 3A11< 7" " 6 $! " $! " 5" " " " 0& " " 5" " " ) /1 3 11< " Figure 2. Output Power versus Input Power MRF1550T1 MRF1550FT1 5-130 " B 6 $! B" 5 $! B $! B" " " 5" " " " /1 /1 3 11< 6" 7" Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS 7" 6 $! )A0: hA3)A449)9@AH 5 $! $! 5 6" " 6 $! 5 $! " " 0& " " " " " " 5" /1 /1 3 11< 6" 0& 5" " 7" Figure 4. Gain versus Output Power " " " 5" /1 /1 3 11< 6" 7" 7" $! hA3)A449)9@AH 5 $! 6 $! " $! 0& 5 0: " "" "" "" 7"" :<) 9/33)1 """ 6 $! 6" 5 $! " " 0& 5 0: " "" "" Figure 6. Output Power versus Biasing Current "" "" 7"" :<) 9/33)1 """ "" Figure 7. Drain Efficiency versus Biasing Current 8" 7" $! 7" hA3)A449)9@AH A/1 /1A 3A11< " Figure 5. Drain Efficiency versus Output Power 6" A/1 /1A 3A11< $! 6" $! 5 $! " 6 $! " "" 5 0: " 5" " 5 </ @ 1 1< Figure 8. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" 6 $! " 5 $! " "" 5 0: " " 5 </ @ 1 1< Figure 9. Drain Efficiency versus Supply Voltage MRF1550T1 MRF1550FT1 5-131 " 6 $! 6 $! 5 $! 5 $! "" " Zin f MHz Zin ZOL* 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j.09 175 3.7 + j2.3 0.7 + j1.1 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 10. Series Equivalent Input and Output Impedance MRF1550T1 MRF1550FT1 5-132 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 500 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 -178 4.817 80 0.009 -39 0.86 -176 100 0.94 -178 2.212 69 0.009 -3 0.88 -175 150 0.95 -178 1.349 61 0.008 -8 0.90 -174 200 0.95 -178 0.892 54 0.006 -13 0.92 -174 250 0.96 -178 0.648 51 0.005 -7 0.93 -174 300 0.97 -178 0.481 47 0.004 -8 0.95 -174 350 0.97 -178 0.370 46 0.005 4 0.95 -174 400 0.98 -178 0.304 43 0.001 15 0.97 -174 450 0.98 -178 0.245 43 0.005 81 0.97 -174 500 0.98 -178 0.209 43 0.003 84 0.97 -174 550 0.99 -177 0.178 41 0.007 70 0.98 -175 600 0.98 -178 0.149 41 0.010 106 0.96 -175 IDQ = 2.0 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 -177 4.81 80 0.003 -119 0.93 -178 100 0.94 -178 2.20 69 0.006 4 0.93 -178 150 0.95 -178 1.35 61 0.003 -1 0.93 -177 200 0.95 -178 0.89 54 0.004 18 0.93 -176 250 0.96 -178 0.65 51 0.001 28 0.94 -176 300 0.97 -178 0.48 47 0.004 77 0.94 -175 350 0.97 -178 0.37 46 0.006 85 0.95 -175 400 0.98 -178 0.30 43 0.007 53 0.96 -174 450 0.98 -178 0.25 43 0.006 74 0.97 -174 500 0.98 -177 0.21 44 0.006 84 0.97 -174 550 0.99 -177 0.18 41 0.002 106 0.97 -175 600 0.98 -178 0.15 41 0.004 116 0.96 -174 IDQ = 4.0 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.97 -179 5.04 87 0.002 -116 0.94 -179 100 0.96 -179 2.43 82 0.006 42 0.94 -178 150 0.96 -179 1.60 77 0.004 13 0.94 -177 200 0.96 -179 1.14 74 0.003 43 0.95 -176 250 0.97 -179 0.89 71 0.004 65 0.95 -175 300 0.97 -179 0.71 68 0.006 68 0.95 -175 350 0.97 -179 0.57 67 0.006 74 0.97 -174 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1550T1 MRF1550FT1 5-133 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued) IDQ = 4.0 mA (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 400 0.97 -179 0.49 63 0.005 58 0.97 -173 450 0.98 -178 0.41 63 0.005 73 0.98 -173 500 0.98 -178 0.36 62 0.003 128 0.98 -173 550 0.98 -178 0.32 58 0.004 57 0.99 -174 600 0.98 -178 0.27 58 0.009 83 0.98 -174 MRF1550T1 MRF1550FT1 5-134 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MOTOROLA WIRELESS RF PRODUCT DEVICE DATA drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1550T1 MRF1550FT1 5-135 MOUNTING The specified maximum thermal resistance of 0.75C/W assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1550T1 MRF1550FT1 5-136 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. !" !" 470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1366-03, STYLE 1 TO-272 SPLIT LEAD PLASTIC MRF1570T1 CASE 1366A-02, STYLE 1 TO-272 STRAIGHT LEAD PLASTIC MRF1570FT1 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 165 0.5 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 175 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.75 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1570T1 MRF1570FT1 5-137 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS -- -- 1 A Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) VGS(th) 1.0 -- 3 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) -- -- 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss -- -- 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss -- -- 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss -- -- 35 pF 10 -- -- 50 -- -- OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Gps Load Mismatch (VDD = 15.6 Vdc, f = 470 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MRF1570T1 MRF1570FT1 5-138 dB % No Degradation in Output Power Before and After Test MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : 9 95 9 :5 ; 9 9" 957 : 956 3 34 ) /1 9 9 9 5 9 35 7 97 95 8 9" 9 9 9 " 95 6 95 9 96 5 6 3 9 6 : 98 97 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 C2, C20, C21 C3 C4, C5 C6, C7 C8, C9 C10, C15 C11, C16, C33, C39 C12, C17, C34, C40 C13, C18, C35, C41 C14, C19, C36, C42 C22, C23 C24, C25 C26, C27 C28, C29 C30, C31 C38, C44 L1, L2 96 98 96 8 ; 9 7 " 9 7 Long Ferrite Beads, Fair Rite Products 270 pF, 100 mil Chip Capacitors 33 pF, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitors 180 pF, 100 mil Chip Capacitors 150 pF, 100 mil Chip Capacitors 300 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 0.1 F, 100 mil Chip Capacitors 1000 pF, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitors 110 pF, 100 mil Chip Capacitors 68 pF, 100 mil Chip Capacitors 120 pF, 100 mil Chip Capacitors 24 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 240 pF, 100 mil Chip Capacitors 17.5 nH, 6 Turn Inductors, Coilcraft 9 95 L3, L4 L5, L6, L7, L8 L9, L10 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9, Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Board : 9 9 95 95 : 9 95" 34 /1 /1 8 98 " 3 ; 955 97 /1 95 5 95 9" ; 958 5 nH, 2 Turn Inductors, Coilcraft 1 Turn, #18 AWG, 0.33 ID Inductors 3 Turn, #16 AWG, 0.165 ID Inductors Type N Flange Mounts 25.5 Chip Resistors (1206) 9.3 Chip Resistors (1206) 0.32 x 0.080 Microstrip 0.46 x 0.080 Microstrip 0.34 x 0.080 Microstrip 0.45 x 0.080 Microstrip 0.28 x 0.240 Microstrip 0.39 x 0.080 Microstrip 0.27 x 0.080 Microstrip 0.25 x 0.080 Microstrip 0.29 x 0.080 Microstrip 0.14 x 0.080 Microstrip 0.32 x 0.080 Microstrip 31 mil Glass Teflon Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1570T1 MRF1570FT1 5-139 9 :5 : : ) 9 9 95 9 9" 9 3 5 9 96 96 97 98 3 9 9" 9 97 35 3 98 ) 956 957 9 95 9 955 8 6 9 9 95 96 " 9 9 9 97 95 95 95 7 95" 95 95 98 9 9 9" 95 : : : 9 958 MRF1570T1 Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 135 - 175 MHZ " 7" 3 ) /1A31/3)A<<A0: A/1 /1A 3A11< "" 5 $! " 6 $! " " $! " " 5 5 $! B" 6 $! $! B 0& 0& " B B" " " 5" " " " 6" 7" 8" ) /1 3 11< /1 /1 3 11< Figure 3. Output Power versus Input Power Figure 4. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 5-140 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 135 - 175 MHZ 7 6" A3)A449)9@AH #2 AA 3A)A0: $! 0& $! 6 6 $! 5 $! 5 6 $! " 5 $! " 5" 0& " " 5" " " " 6" 7" " " 8" " 5" " " 6" 7" 8" /1 /1 3 11< Figure 5. Gain versus Output Power Figure 6. Drain Efficiency versus Output Power A3)A449)9@AH "" 5 $! 7" 6 $! $! 6" " 0& 5 0: " "" "" 7"" """ "" "" 7" $! " 6 $! 5 $! " " 0& 5 0: " "" "" "" 7"" :<) 9/33)1 """ "" "" "" :<) 9/33)1 Figure 7. Output Power versus Biasing Current Figure 8. Drain Efficiency versus Biasing Current "" "" 7" 5 $! A3)A449)9@AH A/1 /1A 3A11< " /1 /1 3 11< 8" A/1 /1A 3A11< " 6 $! $! " " " 5 0: 7"" " " 5 $! 7" 6 $! 5 $! " " " " 5 0: 7"" " 5 </ @ 1 1< </ @ 1 1< Figure 9. Output Power versus Supply Voltage Figure 10. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1570T1 MRF1570FT1 5-141 : 9 95 9 ; :5 9 9" 98 3 5 34 ) /1 9 9 35 95 95 95 ; 955 5 6 6 96 9 : 956 8 9 /1 5 95 9 96 8 95 9 9 9 95 98 34 /1 /1 95 3 : 9" 98 97 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7, C8 C10, C16, C37, C42 C11, C17, C33, C38 C12, C18, C34, C39 C13, C19, C35, C40 C14, C20, C36, C41 C21, C22 C23, C24 C25, C26 C27, C28 C29, C30 C31 ; 96 9 3 7 " 97 9 97 : 9 9 Long Ferrite Beads, Fair Rite Products 270 pF, 100 mil Chip Capacitors 7.5 pF, 100 mil Chip Capacitors 5.1 pF, 100 mil Chip Capacitor 180 pF, 100 mil Chip Capacitors 47 pF, 100 mil Chip Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 1200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 33 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 15 pF, 100 mil Chip Capacitors 2.2 pF, 100 mil Chip Capacitors 6.2 pF, 100 mil Chip Capacitors 1.0 pF, 100 mil Chip Capacitor 9 L1, L2, L3, L4 L5, L6 N1, N2 R1, R2 R3, R4 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19 Board : 7 9 9" 958 95" ; 957 1 Turn, #18 AWG, 0.085 ID Inductors 2 Turn, #16 AWG, 0.165 ID Inductors Type N Flange Mounts 25.5 Chip Resistors (1206) 10 Chip Resistors (1206) 0.240 x 0.080 Microstrip 0.185 x 0.080 Microstrip 1.500 x 0.080 Microstrip 0.150 x 0.240 Microstrip 0.140 x 0.240 Microstrip 0.140 x 0.240 Microstrip 0.150 x 0.240 Microstrip 0.270 x 0.080 Microstrip 0.680 x 0.080 Microstrip 0.320 x 0.080 Microstrip 0.380 x 0.080 Microstrip 31 mil Glass Teflon Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic MRF1570T1 MRF1570FT1 5-142 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 9 ) :5 : 9" : 955 ) 956 9 95 9 9 98 9 3 9 9 95 3 9 96 35 3 97 9 95 9 9 9 9 95 9 97 98 9" 96 95 95 95 5 98 95 95" 97 958 9" 9 9 : : : 9 96 957 MRF1570T1 Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 400 - 470 MHZ " 3 ) /1A31/3)A<<A0: A/1 /1A 3A11< "" 7" "" $! " " $! 6" $! " " 0& B B" " $! B "" $! 0& " " 5 6 7 B" 6" $! " " " 5" " " " 6" 7" ) /1 3 11< /1 /1 3 11< Figure 13. Output Power versus Input Power Figure 14. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1570T1 MRF1570FT1 5-143 TYPICAL CHARACTERISTICS, 400 - 470 MHZ 6" " "" $! A3)A449)9@AH #2 AA 3A)A0: 6 " $! 5 6" $! 8 6 " " " 5" " " " "" $! " " 5" " 6" " 7" 0& " " " /1 /1 3 11< 5" " " " 6" 7" /1 /1 3 11< Figure 15. Gain versus Output Power Figure 16. Drain Efficiency versus Output Power 8" 6" $! A3)A449)9@AH A/1 /1A 3A11< "" 7" " $! "" $! 6" " 0& 57 0: " "" "" 7"" """ "" "" 7" 6" $! "" $! " " $! " " 0& 57 0: " "" "" "" 7"" :<) 9/33)1 """ "" "" "" :<) 9/33)1 Figure 17. Output Power versus Biasing Current Figure 18. Drain Efficiency versus Biasing Current "" "" "" $! 8" A3)A449)9@AH A/1 /1A 3A11< " $! " 0& 6" $! 6" $! 7" " $! 6" " 57 0: 7"" " " " 5 "" $! " " $! Figure 19. Output Power versus Supply Voltage 6" $! " 57 0: 7"" " </ @ 1 1< MRF1570T1 MRF1570FT1 5-144 7" " " 5 </ @ 1 1< Figure 20. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : 95 9 9 ; :5 9" 98 97 3 34 ) /1 35 7 " 9 95 95" ; 98 7 9 9 " 9 3 5 6 95 : 98 9" /1 9 95 5 9 9 : 955 97 96 ; 9 B1, B2, B3, B4, B5, B6 C1, C8, C14, C28 C2, C3 C4, C5 C6, C7 C9, C15, C33, C38 C10, C16, C29, C34 C11, C17, C30, C35 C12, C18, C31, C36 C13, C19, C32, C37 C20, C21 C22, C23 C24, C25, C26, C27 L1, L2 L3, L4 9 3 8 95 5 96 97 6 8 9 96 : 9 9 Long Ferrite Beads, Fair Rite Products 270 pF, 100 mil Chip Capacitors 10 pF, 100 mil Chip Capacitors 180 pF, 100 mil Chip Capacitors 47 pF, 100 mil Chip Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 1200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitors 20 pF, 100 mil Chip Capacitors 5.1 pF, 100 mil Chip Capacitors 1 Turn, #18 AWG, 0.115 ID Inductors 2 Turn, #16 AWG, 0.165 ID Inductors 957 : N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20 Board 9 34 /1 /1 956 95 95 ; 95 Type N Flange Mounts 1.0 k Chip Resistors (1206) 10 Chip Resistors (1206) 0.40 x 0.080 Microstrip 0.26 x 0.080 Microstrip 1.35 x 0.080 Microstrip 0.17 x 0.240 Microstrip 0.12 x 0.240 Microstrip 0.14 x 0.240 Microstrip 0.15 x 0.240 Microstrip 0.18 x 0.172 Microstrip 1.23 x 0.080 Microstrip 0.12 x 0.080 Microstrip 0.40 x 0.080 Microstrip 31 mil Glass Teflon Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1570T1 MRF1570FT1 5-145 9" : ) 97 9 95 9 9 3 3 9 98 97 96 ) 955 98 95 9 9 9 98 :5 : 95" 95 95 9 35 3 96 9 9" 9 5 9 97 9 95 96 9 95 95 956 9 957 : : : 9 95 MRF1570T1 Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 450 - 520 MHZ " 7" 3 ) /1A31/3)A<<A0: A/1 /1A 3A11< "" 6" $! " " $! " " $! "" $! " B B" 6" $! "" $! B " $! " $! B" 0& 0& " " 5 6 ) /1 3 11< Figure 23. Output Power versus Input Power MRF1570T1 MRF1570FT1 5-146 7 B " " " 5" " " " 6" 7" 8" /1 /1 3 11< Figure 24. Input Return Loss versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS, 450 - 520 MHZ 6" " $! 5 A3)A449)9@AH #2 AA 3A)A0: 6" $! "" $! " $! " 8 " " $! " 6" $! " 5" 0& 0& " " " 5" " " " 6" 7" " " 8" " 5" /1 /1 3 11< " " 6" 7" 8" Figure 26. Drain Efficiency versus Output Power 7" 7" A3)A449)9@AH 8" A/1 /1A 3A11< " /1 /1 3 11< Figure 25. Gain versus Output Power " $! 6" $! "" $! 6" " $! " 7"" "" 6" " $! "" $! " 6" $! " " $! 0& 57 0: 0& 57 0: " "" "" " "" 7"" :<) 9/33)1 "" "" :<) 9/33)1 Figure 27. Output Power versus Biasing Current Figure 28. Drain Efficiency versus Biasing Current 7" "" 8" A3)A449)9@AH A/1 /1A 3A11< " $! "" $! 7" 6" " $! 6" $! "" $! " $! " " 6" " $! " "" $! 6" $! " $! " 57 0: 7"" 57 0: 7"" " 5" " 5 " " 5 </ @ 1 1< </ @ 1 1< Figure 29. Output Power versus Supply Voltage Figure 30. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1570T1 MRF1570FT1 5-147 5 $! 6 $! 5 $! 6 $! "" $! 6" $! " $! "" $! " $! " $! 6" $! " $! "7 6" "7 6" "7 6" f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 135 2.8 +j0.05 0.65 +j0.42 400 0.92 -j0.71 1.05 -j1.10 450 0.94 -j1.12 0.61 -j1.14 155 3.9 +j0.34 1.01 +j0.63 440 1.12 -j1.11 0.83 -j1.45 470 1.03 -j1.17 0.62 -j1.12 175 2.4 -j0.47 0.71 +j0.37 470 0.82 -j0.79 0.59 -j1.43 500 0.95 -j1.71 0.75 -j1.03 520 0.62 -j1.74 0.77 -j0.97 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Notes: Impedance Zin was measured with input terminated at 50 W. Impedance ZOL was measured with output terminated at 50 W. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 31. Series Equivalent Input and Output Impedance MRF1570T1 MRF1570FT1 5-148 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. ,% 9(0 %* 902 922 9(0 ; 9(2 9 22 9(0 ; 902 9,22 9(0 9(2 < ,&* DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MOTOROLA WIRELESS RF PRODUCT DEVICE DATA drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 800 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1570T1 MRF1570FT1 5-149 MOUNTING The specified maximum thermal resistance of 0.75C/W assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples MRF1570T1 MRF1570FT1 5-150 see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line #!" #!" N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts Output Power, P1dB -- 80 Watts (Typ) Power Gain @ P1dB -- 16 dB (Typ) Efficiency @ P1dB -- 58% (Typ) * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 921 - 960 MHz, 70 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465D-05, STYLE 1 (NI-600) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 7 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 159 0.9 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 1.1 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF6522-70 MRF6522-70R3 5-151 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(Q) 3 4 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.15 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 2 3 -- S Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 130 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss 41 47 52 pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss 2.4 3 3.4 pF Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) P1dB 73 80 -- W Common-Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Gps 14 16 18 dB Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) 1 47 51 -- % Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) 2 -- 58 -- % Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) IRL Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz, VSWR = 5:1, All Phase Angles) dB -- -- -- -- -10 -15 No Degradation In Output Power Before and After Test (1) Value excludes the input matching. (2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch-to-batch consistency. MRF6522-70 MRF6522-70R3 5-152 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ,*( :< 1 9 0 3 3 3 35 95 9 9 9" </ @ ; 9 1 3 96 3 9 9 95 34A# 34A# 9 97 C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 98 1.0 F Chip Capacitor (0805) 10 F, 35 Vdc Tantalum Capacitor 100 nF Chip Capacitor 22 pF Chip Capacitors, ACCU-P (0805) 2.7 pF Chip Capacitor, ACCU-P (0805) 4.7 pF Chip Capacitors, ACCU-P (0805) 8.2 pF Chip Capacitors, ACCU-P (0805) 2.2 pF Chip Capacitors, ACCU-P (0805) 10 Chip Resistor (0805) 1.0 k Chip Resistor (0805) 9 R3 R4 R5 R6 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 220 Chip Resistor (0805) 5.0 k SMD Potentiometer T1 T2 LP2951 Micro-8 BC847 SOT-23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522-70 Test Circuit Schematic VBIAS C1 VSUPPLY Ground C2 R1 T1 R2 R3 R6 C14 R4 C3 T2 C4 R5 C6 C5 C8 MRF6522-70 C7 C10 C12 C13 C9 C11 Q1 STRAP Figure 2. MRF6522-70 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF6522-70 MRF6522-70R3 5-153 TYPICAL CHARACTERISTICS 6 7" "" #2 A 3A)A0: #2 A 3A)A0: 6" "" "" "" "" 67 5"" " < 0& 8 $! 6 "" 6 "" 6 5"" 6" 7 "" < 0& 8" $! " "" " " "" /1 /1 3 11< /1 /1 3 11< Figure 3. Power Gain versus Output Power " " " " A/1 /1A 3A11< A/1 /1A 3A11< Figure 4. Power Gain versus Output Power 5" 8 " 7 6 "" 8 $! 7 8 " 5 </ @ 1 1< 6 A/1 /1A 3A11< Figure 5. Output Power versus Supply Voltage 7 8 " 7 5" 6 " "" 8" $! 5 7 8 " 5 </ @ 1 1< 7" 6" 6" " " " h " " 5" " " 7 " < 0& "" 8 $! " " 5" " 6 Figure 6. Output Power versus Supply Voltage 7" " " " ) /1 3 11< h A449)9@AH " " " " Figure 7. Efficiency and Output Power versus Input Power MRF6522-70 MRF6522-70R3 5-154 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS 7" 6" 6" " " " " h " " 5" 5" " " " < 0& "" 8" $! " " " " ) /1 3 11< h A449)9@AH A/1 /1A 3A11< 7" " " " " 6" 8 " " 7 6 #2 " 5" h < 0& 8 $! " " 5 hA449)9@AH #2 A 3A)A0: Figure 8. Efficiency and Output Power versus Input Power "" ""5 "" " " "57 "6" 58 " ) /1 3 11< " 6" 8 " " 7 6 #2 " 5" h < 0& 8" $! " " 5 hA449)9@AH #2 A 3A)A0: Figure 9. Power Gain and Efficiency versus Input Power "" ""5 "" "" "7 "5 " 56" " ) /1 3 11< Figure 10. Power Gain and Efficiency versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF6522-70 MRF6522-70R3 5-155 3A) /1A31/3)A<<A0: #2 B 6 B" 3 B 8" 8" 85" 8" 8" 43/)9@ $! < 0& "" 8" 86" #2 A)A0: 7 B" Figure 11. Performance in Broadband Circuit (at Small Signal) MRF6522-70 MRF6522-70R3 5-156 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 8 $! 8" $! 8 $! 8" $! </ @ 0& :< "" 9 3 1* #*,%,* f MHz Zin ZOL* Zin 925 2.65 + j2.53 1.62 - j0.2 940 2.67 + j2.14 1.56 - j0.34 960 2.85 + j1.87 1.55 - j0.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 12. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF6522-70 MRF6522-70R3 5-157 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %"" $ N-Channel Enhancement-Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 960 MHz, 26 Volts Output Power -- 2 Watts Per Transistor Power Gain -- 18 dB Efficiency -- 50% * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power CASE 978-03 PLASTIC PFP-16 * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. PIN CONNECTIONS )9 )9 3) B 3) B 1 5 3) B )9 5 3) B 1 )9 )9 3) 5B 15 )9 6 7 " 8 3) 5B )9 1 # *+ NOTE: Exposed backside flag is source terminal for transistors. MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25C PD 4 Watts Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 12 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating 3 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF9002R2 5-158 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) VGS(th) 2.4 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(Q) 3 -- 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 Adc) VDS(on) -- 0.3 -- Vdc Gps 15 18 -- dB Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) 35 50 -- % Input Return Loss @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) IRL -- -15 -9 dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) P1dB 34 37 -- dBm ON CHARACTERISTICS FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system) Common-Source Amplifier Power Gain @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA, f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation In Output Power MRF9002R2 5-159 < ; 96 34 ) /1 < 5 ; 98 9 3 6 < ; 9" 8 9 " 7 34 /1 /1 97 9 34 /1 /1 95 95 <5 ; 9 345 ) /1 3 /1 9 9 34 ) /1 < ; 97 5 35 5 96 9 9 <5 ; 9 9 345 /1 /1 Figure 1. MRF9002R2 Broadband Test Circuit Schematic Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values Designators Description C1-C6 33 pF Chip Capacitors (0805) C7-C12 1.0 F, 35 V Tantalum Capacitors, B Case, Kemet C13 8.2 pF Chip Capacitor (0805) C14, C15 10 pF Chip Capacitors (0805) C16, C17 2.7 pF Chip Capacitors (0805) C18 3.3 pF Chip Capacitor (0805) L1-L6 12 nH Chip Inductors (0805) R1-R3 0 W Chip Resistors (0805) Z1, Z11 1.16 x 28.5 mm Microstrip Z2, Z7, Z12 0.65 x 5.6 mm Microstrip Z3, Z8, Z13 0.65 x 2.6 mm Microstrip Z4, Z14 1.16 x 19.5 mm Microstrip Z5, Z15 1.16 x 17.5 mm Microstrip Z6 1.16 x 12.9 mm Microstrip Z9 1.16 x 27.2 mm Microstrip Z10 1.16 x 4.3 mm Microstrip PCB Etched Circuit Board Raw PCB Material Rogers RO4350, 0.020, 2.5, x 2.5, er = 3.5 Bedstead Copper Heatsink MRF9002R2 5-160 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 34 /1 /1 34 ) /1 9 9 < < 9 < < 97 96 9" 98 9 3 34 ) /1 95 Pin 1 34 /1 /1 3 97 95 9 35 5 9 $348"" 8"A$! 3*.A: 9 96 9 <5 <5 9 345 ) /1 9 345 /1 /1 Figure 2. MRF9002R2 Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9002R2 5-161 TYPICAL CHARACTERISTICS A/1 /1A 3A0: 5 #2 5 8 8 8 76 6 7 7 5 7 < 0& 8" $! <(=*B1 * 8 6 " 7 " 6 6 " " 8 7 6 < 0& 8" $! <(=*B1 * " 5" 5 " B8 " B5" $ " B5 8"" $! 8" $! 5 6 7 8 5" B5 B" B B5" B5 B" B B" " B 6 < 0& 8"" $! 8" $! B" "" B " B" 58 A/1 /1A 3A0: B" 5,0 ,0*, B" ' ,0*, B" 6' ,0*, B" < 0& 8"" $! 8" $! " " 5" " 5" 5 " 0: 56 5 0: 55 < 0& <(=*B1 * 5 8 " 0: 6 " 8 85 8 8 8 86 /1 /1 3 0: 43/)9@ $! Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Output Power versus Frequency MRF9002R2 5-162 " 5 Figure 6. Intermodulation Distortion versus Output Power " B5" /1 /1 3 0: < 3) </39 </ @ 1< Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage $ )13$/1)A<131)A0:& Figure 4. Power Gain versus Output Power " B6" " Figure 3. Output Power and Power Gain versus Input Power #2 #2 AA 3A)A0: 6 /1 /1 3 0: B7 ) /1 3 0: "5 88 "" 6 $ )13$/1)A<131)A0:& $ )13$/1)A<131)A0:& 66 #2 AA 3A)A0: 55 8 #2 AA 3A)A0: 5 87 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 922 " 9 9 91)9A#4 8 7 9 22 6 9,22 5 5 6 7 8 5" < 3) </39 </ @ 1< Figure 9. Capacitance versus Drain Source Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9002R2 5-163 1 " 8 $! " 8 $! 87 $! 8 $! 87 $! 8 $! 1 8 $! 1 8 $! 87 $! 87 $! 15 87 $! 1 15 87 $! 13)<<13< %0 13)<<13 5 f MHz ZOL* Zin 925 4.5 - j13.3 23.4 - j9.2 960 4.3 - j15.3 23.2 - j10.4 Zin 985 4.1 - j15.8 23.0 - j11.1 ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. f MHz ZOL* Zin 925 6.0 - j12.3 19.7 - j27.8 960 5.9 - j14.3 22.0 - j23.9 985 5.8 - j16.5 22.5 - j25.4 ) *> = Complex conjugate of source impedance. +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 f MHz ZOL* Zin 925 4.3 - j12.2 23.1 - j6.5 960 4.3 - j14.0 22.8 - j8.4 985 3.9 - j15.9 22.6 - j9.3 Figure 10. Series Equivalent Input and Output Impedance MRF9002R2 5-164 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 19 dB Efficiency -- 41.5% IMD -- -32.5 dBc %"" %"" 945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power * Excellent Thermal Stability CASE 360B-05, STYLE 1 NI-360 MRF9030R1 * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. CASE 360C-05, STYLE 1 NI-360S MRF9030LSR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 68 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc PD 92 0.53 117 0.67 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 1.9 1.5 C/W Total Device Dissipation @ TC = 25C Derate above 25C MRF9030R1 MRF9030LSR1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9030R1 MRF9030LSR1 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9030R1 MRF9030LSR1 5-165 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) -- 3.8 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) -- 0.19 0.4 Vdc gfs -- 3 -- S Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 49.5 -- pF Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 26.5 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (continued) MRF9030R1 MRF9030LSR1 5-166 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 37 41.5 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -32.5 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- -15.5 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 19 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 41.5 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -33 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- -14 -- dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) P1dB -- 30 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Gps -- 19 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) -- 60 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation In Output Power MRF9030R1 MRF9030LSR1 5-167 : : ; 96 97 9 9 34 ) /1 5 6 ; ; 9 9 96 98 /1 ; 7 8 " 5 34 /1 /1 95 9 9 B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2 95 9 9 9" Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 PCB Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Capacitors 10 pF Chip Capacitors, B Case 9.1 pF Chip Capacitor, B Case 0.6 pF to 4.5 pF Trim Capacitor 220 F, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 9 9 0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520, Taper 0.285 x 0.520 Microstrip 0.140 x 0.270 Microstrip 0.450 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF-35-0300, 30 mil, r = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic 96 96 97 98 9 9 9 9 9 95 95 9 9 CUT OUT AREA 34 ) /1 9 9" 9 34 /1 /1 9 MRF9030 900 MHz 3*.B" Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030R1 MRF9030LSR1 5-168 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 8 #2 AA 3A)A0: " #2 7 " 0& 5" " 1+ B1 * "" -! 1 * <#%&( 6 $ 5 B5" B5 3 B5 5 B5 85" 85 8" 8 8" B57 8" 8 B" B B B B7 3 ) /1A31/3)A<<A0: " A3)A449)9@AH $ )13$/1)A<131)A0:& TYPICAL CHARACTERISTICS 43/)9@ $! #2 AA 3A)A0: 8 8 5"" 7 " 7 "" 6 6 0& 8 $! 8 $! " B" B5" "" B" 5"" B" B" " 56 "" " /1 /1 3 11< Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 0& " 8 $! 8 $! " B5" 5,0 ,0*, B" B" ' ,0*, B" B6" 0& 8 $! 8 $! /1 /1 3 11< " B" B" "" #2 AA 3A)A0: $ )13$/1)A<131)A0:& 56 " #2 7 " 5" " 6' ,0*, " 0& " 8 $! " "" " " " " /1 /1 3 11< /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA A3)A449)9@AH " $ )13$/1)A<131)A0:& Figure 3. Class AB Broadband Circuit Performance "" " MRF9030R1 MRF9030LSR1 5-169 #2 #2 AA 3A)A0: 7 " 0& " 8 $! 8 $! " 7 " " B" B" $ " "" A3)A449)9@AH $ )13$/1)A<131)A0:& " " B" /1 /1 3 11< Figure 8. Power Gain, Efficiency and IMD versus Output Power MRF9030R1 MRF9030LSR1 5-170 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2 ,&* = %0 85" $! 85" $! 8" $! 8" $! " 5" Zload f MHz Zsource 930 1.34 - j0.1 3.175 + j0.09 945 1.36 - j0.2 3.1 + j0.08 960 1.4 - j0.14 3.0 + j0.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9030R1 MRF9030LSR1 5-171 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %"" %""& N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 20 dB Efficiency -- 41% (Two Tones) IMD -- -31 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power 945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Excellent Thermal Stability CASE 1265-07, STYLE 1 (TO-270) PLASTIC (MRF9030MR1) * Characterized with Series Equivalent Large-Signal Impedance Parameters * Moisture Sensitivity Level 3 * Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * TO-272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. * TO-270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1337-02, STYLE 1 (TO-272 DUAL LEAD) PLASTIC (MRF9030MBR1) MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 139 0.93 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 175 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9030MR1 MRF9030MBR1 C7 (Minimum) C6 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.08 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MRF9030MR1 MRF9030MBR1 5-172 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) -- 0.23 0.4 Vdc gfs -- 2.7 -- S Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 49 -- pF Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 27 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.2 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 20 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 37 41 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- -13 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 20 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 40.5 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- -12 -- dB OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9030MR1 MRF9030MBR1 5-173 : : ; 97 34 ) /1 96 9 5 6 7 " 8 9 ; ; ; 9 96 97 98 /1 5 6 7 34 /1 /1 9 9 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 95 9 9" 9 0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.200 x 0.270 Microstrip 0.330 x 0.270 Microstrip 0.140 x 0.270 x 0.520, Taper 0.040 x 0.520 Microstrip 0.090 x 0.520 Microstrip 0.370 x 0.520 Microstrip (MRF9030MR1) 0.290 x 0.520 Microstrip (MRF9030MBR1) 0.130 x 0.520 Microstrip (MRF9030MR1) 0.210 x 0.520 Microstrip (MRF9030MBR1) Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 9 9 95 0.360 x 0.270 Microstrip 0.050 x 0.270 Microstrip 0.110 x 0.060 Microstrip 0.220 x 0.060 Microstrip 0.100 x 0.060 Microstrip 0.870 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.340 x 0.060 Microstrip Taconic RF-35-0300, r = 3.5 Figure 1. 930-960 MHz Broadband Test Circuit Schematic Table 1. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead, Surface Mount 95F786 Newark B2 Long Ferrite Bead, Surface Mount 95F787 Newark C1, C7, C14, C15 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2 0.6-4.5 Variable Capacitor, Gigatrim 44F3360 Newark C3, C11 3.9 pF Chip Capacitors, B Case 100B3R6BP 500X ATC C4, C12 0.8-8.0 Variable Capacitors, Gigatrim 44F3360 Newark C5, C6 6.8 pF Chip Capacitors, B Case 100B7R5JP 500X ATC C8, C16, C17 10 F, 35 V Tantulum Chip Capacitors 93F2975 Newark C9, C10 10 pF Chip Capacitors, B Case 100B100JP 500X ATC C13 1.8 pF Chip Capacitor, B Case (MRF9030MR1) 0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 100B1R8BP 44F3360 ATC Newark C18 220 F Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Coilcraft Inductors A04T-5 Coilcraft WB1, WB2 20 mil Brass Shim (0.250 x 0.250) RF-Design Lab RF-Design Lab PCB Etched Circuit Board 900 MHz 250/Viper Rev 02 DSelectronics MRF9030MR1 MRF9030MBR1 5-174 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 97 96 : : 97 9 96 9 9 9 : 95 9 9 : 9" 98 9 9 CUT OUT AREA 9 95 9 MRF9030M Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) 97 97 : 96 9 9 9 9 : 95 9 CUT OUT AREA 9 : 9 96 9 98 : 9" 9 9 95 900 MHz Rev 02 Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9030MR1 MRF9030MBR1 5-175 #2 AA 3A)A0: #2 " " 8 5 7 B5" $ 6 B5 3 0& 5" " 1+ B1 * "" -! 1 * <#%&( 85" 85 8" 8 8" 8 B5 B5 B57 8" B" B B B B7 3A) /1A31/3) <<A0: " $A)13$/1) <131)A0:& h A3) 449)9@AH TYPICAL CHARACTERISTICS 43/)9@ $! Figure 4. Class AB Broadband Circuit Performance 56 " 5"" " " 8 7 " $ )13$/1)A<131)A0:& 0& 8 $! 8 $! "" B" B5" "" B5" B5 "" B" 5"" B B" B " " 0& 56 8 $! 8 $! "" " Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion versus Output Power " 5,0 ,0*, B" B" ' ,0*, B" 6' ,0*, B6" B7" " B /1 /1 3 11< 0& " 8 $! 8 $! B" " B" /1 /1 3 11< #2 AA 3A)A0: 8 B " "" " #2 " 7 " 5" " " " 0& " 8 $! " /1 /1 3 11< /1 /1 3 11< Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF9030MR1 MRF9030MBR1 5-176 " A3)A449)9@AH #2 AA 3A)A0: $ )13$/1)A<131)A0:& " "" MOTOROLA WIRELESS RF PRODUCT DEVICE DATA #2 AA 3A)A0: " " #2 " 7 0& " 8 $! 8 $! " " " " B" B" $ " B" "" A3)A449)9@AH $ )13$/1)A<131)A0:& /1 /1 3 11< Figure 9. Power Gain, Efficiency and IMD versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9030MR1 MRF9030MBR1 5-177 85" $! 85" $! 8" $! 8" $! " 5" %2 f MHz Zin ZOL* Zin 930 1.07 - j0.160 3.53 + j0.20 945 1.14 - j0.385 3.41 + j0.24 960 1.17 - j0.170 3.60 + j0.17 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1) MRF9030MR1 MRF9030MBR1 5-178 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 85" $! 8" $! 85" $! 8" $! " 5" %2 f MHz Zin ZOL* Zin 930 1.0 + j0.18 3.05 + j0.09 945 1.0 + j0.10 3.00 + j0.07 960 1.0 + j0.03 2.95 + j0.03 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9030MR1 MRF9030MBR1 5-179 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. * Typical Two-Tone Performance at 945 MHz, 28 Volts Output Power -- 45 Watts PEP Power Gain -- 18.8 dB Efficiency -- 42% IMD -- -32 dBc %"! %"! 945 MHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters CASE 360B-05, STYLE 1 NI-360 MRF9045R1 * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. CASE 360C-05, STYLE 1 NI-360S MRF9045LSR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc PD 125 0.71 175 1 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 1.4 1.0 C/W Total Device Dissipation @ TC = 25C Derate above 25C MRF9045R1 MRF9045LSR1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9045R1 MRF9045LSR1 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MRF9045R1 MRF9045LSR1 5-180 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 4 -- S Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 69 -- pF Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (continued) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9045R1 MRF9045LSR1 5-181 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18.8 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 38 42 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -32 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- -14 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 18.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 41 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -33 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- 13 -- dB Power Output, 1 dB Compression Point (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) P1dB -- 55 -- W Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) Gps -- 18 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) -- 60 -- % Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MRF9045R1 MRF9045LSR1 5-182 No Degradation In Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : ; 9 9 ; 9 ; 96 : ; 9 96 34 ) /1 98 8 7 5 97 9 9 " 9" 5 9 34 /1 /1 95 9 6 9 9 B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 Z1 Z2 Z3 95 Short Ferrite Bead Surface Mount Long Ferrite Bead Surface Mount 47 pF Chip Capacitors, B Case 0.8-8.0 pF Gigatrim Variable Trim Capacitors 10 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Surface Mount Chip Capacitors 2.2 pF Chip Capacitor, B Case 0.7 pF Chip Capacitor, B Case - MRF9045LS 1.3 pF Chip Capacitor, B Case - MRF9045 220 F, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors, Coilcraft 0.260 x 0.080 Microstrip 0.610 x 0.120 Microstrip 0.260 x 0.320 Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.360 x 0.320 Microstrip 0.240 x 0.320 x 0.620, Taper 0.140 x 0.620 Microstrip 0.510 x 0.620 Microstrip 0.330 x 0.320 Microstrip 0.140 x 0.320 Microstrip 0.070 x 0.080 Microstrip 0.240 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.930 x 0.080 Microstrip 0.180 x 0.080 Microstrip 0.350 x 0.080 Microstrip Arlon GX-0300-55-22, 0.03, r = 2.55 Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic 9 96 : : 96 95 9 9 : CUT OUT AREA 9 9 : 9 98 97 9 9 95 9" 9 9 MRF9045 900 MHz 3*.B"A Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9045R1 MRF9045LSR1 5-183 7 " h 7 0& 5" 1+ B1 * $*%2,* * "" -! 1 * <#%&( 6 $ B5" B5 B5 3 5 " 85" 85 B5 8" 8 8" 43/)9@ $! B57 8" 8 B B B 3A) /1A31/3) <<A0: #2 A 3A)A0: 8 #2 $A)13$/1) <131)A0:& " h A3) 449)9@AH TYPICAL CHARACTERISTICS Figure 3. Class AB Broadband Circuit Performance 8" ""A 7 5"A 7" 5""A 6 7 0& 8 $! 6" " " /1 /1 3 11< B" B" B5" B" B" 7 0& 5" 8 $! 8 $! B" B5" B" 5,0A,0*, B" B" 'A,0*, B6" B7" 6'A,0*, B8" " " "" /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power MRF9045R1 MRF9045LSR1 5-184 A ""A 5"A " " "" /1 /1 3 11< Figure 5. Intermodulation Distortion versus Output Power " 6" #2 8 #2A 3A)A0: $A)13$/1)A<131)A0:& Figure 4. Power Gain versus Output Power B" 5"" B" B6" "" 7 0& 8 $! 8 $! " 7 " 6 " 5" h 5 " " 7 0& 5" 8 $! " hA3)A449)9@AH 8 $A)13$/1)A<131)A0:& #2 A 3A)A0: "" " "" " /1 /1 3 11< Figure 7. Power Gain, Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2 ,&* = %0 8" $! 85" $! 85" $! 8" $! 7 5" f MHz Zload Zsource 930 1.02 + j0.06 2.6 + j0.20 945 1.10 + j0.11 2.6 + j0.16 960 1.15 + j0.25 2.6 + j0.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 8. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9045R1 MRF9045LSR1 5-185 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. * Typical Performance at 945 MHz, 28 Volts Output Power -- 45 Watts PEP Power Gain -- 19 dB Efficiency -- 41% (Two Tones) IMD -- -31 dBc * Integrated ESD Protection * Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Moisture Sensitivity Level 3 * Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * TO-272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. * TO-270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. %"! %"!& 945 MHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1265-07, STYLE 1 TO-270 PLASTIC MRF9045MR1 CASE 1337-02, STYLE 1 TO-272 DUAL LEAD PLASTIC MRF9045MBR1 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 177 1.18 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 175 C Symbol Max Unit RJC 0.85 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MRF9045MR1 MRF9045MBR1 5-186 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) 3 3.7 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.22 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 4 -- S Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 70 -- pF Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 38 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.7 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 19 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 38 41 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- -14 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 19 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 41 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- -13 -- dB OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9045MR1 MRF9045MBR1 5-187 : : ; 9 96 ; 9 9 34 ) /1 98 9 9 5 B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6, C15, C16 C10 C11 C12 C17 L1, L2 Z1 Z2 7 /1 6 9 ; 9 " Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case 2.7 pF Chip Capacitors, B Case 3.9 pF Chip Capacitor, B Case 10 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Surface Mount Capacitors 2.2 pF Chip Capacitor, B Case 4.7 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 220 F, 50 V Electrolytic Capacitor 12.5 nH Inductors 0.20 x 0.08 Microstrip 0.57 x 0.12 Microstrip 9" Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 95 97 9 95 8 9 ; 96 34 /1 /1 5 9 0.14 x 0.32 Microstrip 0.47 x 0.32 Microstrip 0.16 x 0.32 x 0.62 Taper 0.18 x 0.62 Microstrip 0.56 x 0.62 Microstrip 0.33 x 0.32 Microstrip 0.14 x 0.32 Microstrip 0.36 x 0.08 Microstrip 1.01 x 0.08 Microstrip 0.15 x 0.08 Microstrip 0.29 x 0.08 Microstrip Figure 1. MRF9045MR1 930-960 MHz Broadband Test Circuit Schematic 9 96 I%2 : : 96 , 0 95 9 : 9 9 : 9 CUT OUT AREA 2##=G 98 97 9 9 9 9" 9 9 95 MRF9045MR1 , 0 Figure 2. MRF9045MR1 930-960 MHz Broadband Test Circuit Component Layout MRF9045MR1 MRF9045MBR1 5-188 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : ; 34 ) /1 : 96 97 5 9 B1 B2 C1, C8, C13, C14 C2 C3 C4 C5, C6, C9, C10 C7, C15, C16 C11 C12 C17 L1, L2 WB1, WB2 ; 9 ; 96 9 9 ; 9 9 6 95 9 98 7 /1 8 " 9 9" 9 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.4-2.5 pF Variable Capacitor, Johanson Gigatrim 3.6 pF Chip Capacitor, B Case 0.8-8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Chip Capacitors 7.5 pF Chip Capacitor, B Case 0.6-4.5 pF Variable Capacitor, Johanson Gigatrim 220 F Electrolytic Chip Capacitor 12.5 nH Surface Mount Inductors 10 mil Brass Wear Blocks Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board 95 34 /1 /1 5 9 0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520 Taper 0.285 x 0.520 Microstrip 0.140 x 0.270 Microstrip 0.450 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF-35-0300, r = 3.5 Figure 3. MRF9045MBR1 930-960 MHz Broadband Test Circuit Schematic 96 96 97 9 9 95 9 9 : 9 : ) /1 : : CUT OUT AREA 9 9 98 9" 9 95 9 /1 /1 9 MRF9045MB 900 MHz 3*.B" Figure 4. MRF9045MBR1 930-960 MHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9045MR1 MRF9045MBR1 5-189 TYPICAL CHARACTERISTICS #2 7 " 1+ B1 * $*%2,* * "" -! 1 * <#%&( 5 B5" $ 3 B5 B5 B5 5 85" 85 8" 8 8" B57 8" 8 B" B B B B7 3A) /1A31/3) <<A0: 7 0& 5" 6 $A)13$/1) <131)A0:& #2 AA 3A)A0: 8 h A3) 449)9@AH " " 4,*F*&G $! Figure 5. Class AB Broadband Circuit Performance " " 8 5" 8 7" 7 7 7 0& 8 $! 8 $! 6 6 " "" " B B" B B5" 7" B5 5" B" B 7 0& B" 8 $! 8 $! B " B" 7 0& 5" 8 $! 8 $! 5,0 ,0*, B" ' ,0*, B" B" 6' ,0*, B7" " "" " #2 7 " 5" " B6" " 7 0& 5" 8 $! " " /1 /1 3 11< /1 /1 3 11< Figure 8. Intermodulation Distortion Products versus Output Power Figure 9. Power Gain and Efficiency versus Output Power MRF9045MR1 MRF9045MBR1 5-190 "" " " #2 AA 3A)A0: $ )13$/1)A<131)A0:& " Figure 7. Intermodulation Distortion versus Output Power Figure 6. Power Gain versus Output Power B5" /1 /1 3 11< /1 /1 3 11< B" " A3)A449)9@AH #2 AA 3A)A0: " $ )13$/1)A<131)A0:& " " "" MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " A/1 /1A 3A11<A " #2 AA 3A)A0: 6" " " " 5 5" " " " " "5 5" 8 $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( 7 5" 3) 1 1< Figure 10. Output Voltage versus Supply Voltage (MRF9045MR1) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 7 7 0& 5" 8 $! 8 $! " " " B" 5 " #2 B" $ " B" "" A3)A449)9@AH $ )13$/1)A<131)A0:& TYPICAL CHARACTERISTICS /1 /1 3 11< Figure 11. Power Gain, Efficiency and IMD versus Output Power (MRF9045MBR1) MRF9045MR1 MRF9045MBR1 5-191 = %0 2 ,&* 8 $! 8 $! 85" $! 85" $! 7 5" f MHz Zload Zsource 930 0.81 - j0.25 2.03 + j0.09 945 0.85 - j0.05 2.03 + j0.28 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 12. Series Equivalent Input and Output Impedance (MRF9045MR1) MRF9045MR1 MRF9045MBR1 5-192 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA = %0 8" $! 8" $! 85" $! 2 ,&* 85" $! 7 5" Zload f MHz Zsource 930 0.75 - j0.6 2.65 - j0.05 945 0.72 - j0.6 2.60 - j0.05 960 0.70 - j0.5 2.55 - j0.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 13. Series Equivalent Input and Output Impedance (MRF9045MBR1) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9045MR1 MRF9045MBR1 5-193 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power -- 60 Watts PEP Power Gain -- 17 dB Efficiency -- 40% IMD -- -31 dBc %"#" %"#" 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power * Excellent Thermal Stability CASE 360B-05, STYLE 1 NI-360 MRF9060R1 * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. CASE 360C-05, STYLE 1 NI-360S MRF9060LSR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc PD 159 0.91 219 1.25 Watts W/C Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Total Device Dissipation @ TC = 25C Derate above 25C MRF9060R1 MRF9060LSR1 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9060R1 MRF9060LSR1 Symbol Max Unit RJC 1.1 0.8 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MRF9060R1 MRF9060LSR1 5-194 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) -- 0.17 0.4 Vdc gfs -- 5.3 -- S Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 98 -- pF Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 50 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (continued) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9060R1 MRF9060LSR1 5-195 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 16 17 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 36 40 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- -16 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 17 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 39 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- -16 -- dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) P1dB -- 70 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Gps -- 17 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) -- 51 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MRF9060R1 MRF9060LSR1 5-196 No Degradation In Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : 9 34 ) /1 : ; 96 5 9 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 95 9 6 95 7 ; 9 ; 9 ; 96 98 8 9 0.240 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.180 x 0.270 Microstrip 0.350 x 0.270 Microstrip 0.270 x 0.520 x 0.140 Taper 0.170 x 0.520 Microstrip 0.410 x 0.520 Microstrip 0.060 x 0.520 Microstrip " /1 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 5 9" 9 9 6 34 /1 /1 9 97 0.360 x 0.270 Microstrip 0.060 x 0.270 Microstrip 0.110 x 0.060 Microstrip 0.330 x 0.060 Microstrip 0.230 x 0.060 Microstrip 0.740 x 0.060 Microstrip 0.130 x 0.060 Microstrip 0.340 x 0.060 Microstrip Taconic RF-35-0300, 30 mil, r = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic Table 1. 945 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 95F786 Newark B2 Long Ferrite Bead 95F787 Newark C1, C7, C13, C14 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2, C3, C11 0.8-8.0 Gigatrim Variable Capacitors 44F3360 Newark C4, C5, C8, C9 10 pF Chip Capacitors, B Case 100B100JP 500X ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitor 93F2975 Newark C10 3.0 pF Chip Capacitor, B Case 100B3R0JP 500X ATC C12 0.5 pF Chip Capacitor, B Case (MRF9060) 0.7 pF Chip Capacitor, B Case (MRF9060S) 100B0R5BP 500X 100B0R7BP 500X ATC ATC C17 220 mF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Inductors A04T-5 Coilcraft N1, N2 N-Type Panel Mount, Stripline 3052-1648-10 Avnet WB1, WB2 10 mil Brass Wear Blocks MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9060R1 MRF9060LSR1 5-197 9 96 : : 96 95 9 9 : 95 9 : CUT OUT AREA ) /1 9 97 98 9 9 9 9" 9 /1 /1 9 MRF9060 900 MHz 3*.B" Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MRF9060R1 MRF9060LSR1 5-198 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA #2 h " 0& " " $ 5 B5" B5 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5 3 " 5 85" B5 85 8" 8 8" 43/)9@ $! B57 8" 8 B" B B B B7 3A) /1A31/3) <<A0: #2 A 3A)A0: 6 $A)13$/1) <131)A0:& " 7 h A3) 449)9@AH TYPICAL CHARACTERISTICS " #2 A 3A)A0: 6 ""A 6 "A 6A 0& 8 $! 8 $! Figure 4. Power Gain versus Output Power B5" B5 6 B" B "" " B" " 0& 8 $! 8 $! B " /1 /1 3 11< "" Figure 5. Intermodulation Distortion versus Output Power " " 0& " 8 $! 8 $! B" B" " " B5" h 5,0A,0*, B" #2 7 #2A 3A)A0: $ )13$/1)A<131)A0:& B B" " "" /1 /1 3 11< " B" 5" " B" 'A,0*, B" B6" " " /1 /1 3 11< "" Figure 6. Intermodulation Distortion Products versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 0& " 8 $! " 6'A,0*, 7 " hA3)A449)9@AH 7 $A)13$/1)A<131)A0:& Figure 3. Class AB Broadband Circuit Performance " "" " /1 /1 3 11< Figure 7. Power Gain and Efficiency versus Output Power MRF9060R1 MRF9060LSR1 5-199 7 " #2 #2A 3A)A0: " 0& " 8 $! 8 $! h " B" " 7 " B" $ " "" B" hA3)A449)9@AH $A)13$/1)A<131)A0:& TYPICAL CHARACTERISTICS /1 /1 3 11< Figure 8. Power Gain, Efficiency, and IMD versus Output Power MRF9060R1 MRF9060LSR1 5-200 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2 ,&* = %0 85" $! 8" $! 8" $! 85" $! " " f MHz Zload Zsource 930 0.80 - j0.10 2.08 - j0.65 945 0.80 - j0.05 2.07 - j0.38 960 0.81 - j0.10 2.04 - j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9060R1 MRF9060LSR1 5-201 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 945 MHz, 26 Volts Output Power -- 60 Watts PEP Power Gain -- 18.0 dB Efficiency -- 40% (Two Tones) IMD -- -31.5 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * TO-270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO-272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. %"#" %"#"& 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1265-08, STYLE 1 TO-270 DUAL LEAD PLASTIC MRF9060MR1 CASE 1337-02, STYLE 1 TO-272 DUAL LEAD PLASTIC MRF9060MBR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 223 1.79 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 175 C Symbol Max Unit RJC 0.56 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MRF9060MR1 MRF9060MBR1 5-202 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9060MR1 MRF9060MBR1 C6 (Minimum) C5 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating MRF9060MR1 MRF9060MBR1 1 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) 3 3.7 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) -- 0.21 0.4 Vdc gfs -- 5.3 -- S Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 101 -- pF Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 53 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.5 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (continued) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9060MR1 MRF9060MBR1 5-203 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 37 40 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -31.5 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- -14.5 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps -- 18 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) -- 40 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IRL -- -12.5 -- dB FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MRF9060MR1 MRF9060MBR1 5-204 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : ; 9 34 ) /1 : 96 9 5 6 9 7 8 ; 9 ; ; 9 96 98 " /1 5 6 9" 9 9 7 34 /1 /1 95 9 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 95 97 9 0.240 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.100 x 0.270 x 0.080, Taper 0.330 x 0.270 Microstrip 0.120 x 0.270 Microstrip 0.270 x 0.520 x 0.140, Taper 0.240 x 0.520 Microstrip 0.340 x 0.520 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 0.060 x 0.520 Microstrip 0.360 x 0.270 Microstrip 0.060 x 0.270 Microstrip 0.130 x 0.060 Microstrip 0.300 x 0.060 Microstrip 0.210 x 0.060 Microstrip 0.600 x 0.060 Microstrip 0.290 x 0.060 Microstrip 0.340 x 0.060 Microstrip Figure 1. 930-960 MHz Broadband Test Circuit Schematic Table 1. 930-960 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 95F786 Newark B2 Long Ferrite Bead 95F787 Newark C1, C7, C13, C14 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2, C3, C11 0.8-8.0 Gigatrim Variable Capacitors 44F3360 Newark C4, C5 11 pF Chip Capacitors, B Case (MRF9060MR1) 10 pF Chip Capacitors, B Case (MRF9060MBR1) 100B110JP 500X 100B100JP 500X ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitors 93F2975 Newark C8, C9 10 pF Chip Capacitors, B Case 100B100JP 500X Newark C10 3.9 pF Chip Capacitor, B Case 100B3R9CP 500X ATC C12 1.7 pF Chip Capacitor, B Case 100B1R7BP 500X ATC C17 220 mF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Inductors A04T-5 Coilcraft N1, N2 N-Type Panel Mount, Stripline 3052-1648-10 Avnet WB1, WB2 15 mil Brass Wear Blocks Board Material 30 mil Glass Teflon, r = 2.55 Copper Clad, 2 oz Cu RF-35-0300 Taconic PCB Etched Circuit Board TO-270/TO-272 Surface/Bolt DSelectronics MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9060MR1 MRF9060MBR1 5-205 96 9 : : 96 9 9 9 : 95 9 : CUT OUT AREA ) /1 9 97 98 9 9 /1 /1 9" 9 9 95 MRF9060M MRF9060MB Figure 2. 930-960 MHz Broadband Test Circuit Component Layout MRF9060MR1 MRF9060MBR1 5-206 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 8 " #2 " 0& " " 1+ B1 * "" -! 1 * <#%&( 5 B7 B5" $ B5 5 3 85" 85 8" B5 8 8" 8 B5 8" B" B B B B7 3A) /1A31/3) <<A0: 6 $A)13$/1) <131)A0:& #2 AA 3A)A0: 7 A3) 449)9@AH TYPICAL CHARACTERISTICS 4,*F*&G $! Figure 3. Class AB Broadband Circuit Performance #2 AA 3A)A0: "" 7 " 6 6 6 0& 8 $! 8 $! " "" B" B 6 B5" B5 " B" "" B B 0& 8 $! 8 $! B" " "" /1 /1 3 11< /1 /1 3 11< Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power B" " B5" 5,0 ,0*, B" B" ' ,0*, B" 6' ,0*, #2 " "" " " 5" " 7 0& " 8 $! " B6" " 7 #2 AA 3A)A0: 0& " 8 $! 8 $! B" B7" B " " /1 /1 3 11< /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA A3)A449)9@AH 7 $ )13$/1)A<131)A0:& $ )13$/1)A<131)A0:& 8 " " "" MRF9060MR1 MRF9060MBR1 5-207 " " #2 #2 AA 3A)A0: 7 " 0& " 8 $! 8 $! " 7 " " B" $ B" " "" $ )13$/1)A<131)A0:& A3)A449)9@AH TYPICAL CHARACTERISTICS B" /1 /1 3 11< Figure 8. Power Gain, Efficiency, and IMD versus Output Power MRF9060MR1 MRF9060MBR1 5-208 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 85" $! 8" $! 2 ,&* 85" $! = %0 8" $! " " f MHz Zload Zsource 930 0.63 + j0.57 1.8 + j0.84 945 0.60 + j0.41 1.7 + j0.55 960 0.57 + j0.45 1.6 + j0.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9060MR1 MRF9060MBR1 5-209 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %"" %"" %"" %"" N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large-signal, common- source amplifier applications in 26 volt base station equipment. * Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF9080 CASE 465A-06, STYLE 1 NI-780S MRF9080SR3, MRF9080LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-210 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 8.0 -- S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 73 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.9 -- pF Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) P1dB 68 75 -- W Common-Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Gps 17 18.5 20 dB Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) 1 47 52 -- % Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) 2 -- 55 -- % Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) IRL 9.5 12.5 -- dB Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally input matched. (2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-211 35 ; 96 3 97 ; 9 3 9 34 ) /1 96 9 9 9 95 /1 95 9 9 34 /1 /1 9 9 9 97 98 9" Figure 1. Broadband GSM 900 Test Circuit Schematic Table 1. Broadband GSM 900 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 4.7 pF Chip Capacitor, B Case 100B4R7BW ATC C2 2.7 pF Chip Capacitor, B Case 100B2R7BW ATC C3 1.5 pF Chip Capacitor, B Case 100B1R5BW ATC C4, C5, C9, C10, C12, C13 5.6 pF Chip Capacitors, B Case 100B5R6CW ATC C6, C16, C17 22 pF Chip Capacitors, B Case 100B220GW ATC C7, C18 10 F, 35 V Tantalum Chip Capacitors 293D106X9035D2T Sprague-Vishay C8, C11 10 pF Chip Capacitors, B Case 100B100JW ATC C14 0.8 pF Chip Capacitor, B Case 100B0R8BW ATC C15 8.2 pF Chip Capacitor, B Case 100B8R2GW ATC R1, R2, R3 1.0 k, ??? W Chip Resistors (0805) WB1, WB2 Beryllium Copper Wear Blocks 0.004 x 0.210 x 0.520 Raw PCB Material 30 mil Glass Teflon, r = 2.55 TLX8-0300 Taconic PCB Etched Circuit Board C-GY-00-001-02 Cibel MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-212 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 97 96 35 96 3 9 34 ) /1 9 9 95 9 9 95 : 9 CUT OUT AREA 3 9 34 /1 /1 9 9 : 9 97 98 9" MRF9080 Figure 2. Broadband GSM 900 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-213 ; / 9 3 9 3 35 ; 98 3 ; 1 9 9 95 3 9" 96 95 /1 34 ) /1 3 9 34 /1 /1 9 9 9 9 97 Figure 3. Broadband GSM 900 Optimized Demo Board Schematic Table 2. Broadband GSM 900 Optimized Demo Board Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 4.7 pF Chip Capacitor, ACCU-P (0805) #08051J3R9CBT AVX C2 3.9 pF Chip Capacitor, ACCU-P (0805) #08051J3R9CBT AVX C3, C15 22 pF Chip Capacitors, ACCU-P (0805) #08051J221 AVX C4, C6 22 mF, 35 V Tantalum Chip Capacitors #T491X226K035AS4394 Kemet C5 1.0 mF Chip Capacitor, ACCU-P (0805) #08053G105ZATEA AVX C7, C8 5.6 pF Chip Capacitors, ACCU-P (0805) #08051J5R18CBT AVX C9 220 mF, 63 V Electrolytic Capacitor C10, C11 3.3 pF Chip Capacitors, ACCU-P (0805) #08051J8R2CBT AVX C12, C13 2.2 pF Chip Capacitors, ACCU-P (0805) #08051J2R2CBT AVX C14 4.7 pF Chip Capacitor #100B ATC P1 5.0 k Potentiometer CMS Cermet Multi-turn #3224W Bourns R1 10 , 1/8 W Chip Resistor (0805) R2 1.0 k, 1/8 W Chip Resistor (0805) R3 1.2 k, 1/8 W Chip Resistor (0805) R4 2.2 k, 1/8 W Chip Resistor (0805) R5, R6 1.0 k, 1/8 W Chip Resistors (0805) T1 Bipolar NPN Transistor, SOT-23 #BC847ALT1 ON Semiconductor U1 Voltage Regulator, Micro-8 #LP2951ACDM-5.0R2 ON Semiconductor RF Connectors, Type SMA #R125510001 Radial Substrate = Taconic RF35, Thickness 0.5 mm MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-214 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA :< 9 3 , 0 </ @ / 3 3 1 98 9 35 9 9 3 96 3 95 9" 95 9 9 9 9 9 97 MRF9080 Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-215 TYPICAL CHARACTERISTICS (IN MOTOROLA BROADBAND GSM 900 OPTIMIZED DEMO BOARD) " 5" 0& 7""A ""A 8 ""A 6 0& 8" $! 1 9 " /1 /1 3 11< 8 7 "" 8" $! 1 9 6 "" Figure 5. Power Gain versus Output Power #2 #2 A 3A)A0: " " 6" 8 6 6" 0& "" 1 9 7" 76" 78" " B "" 8" 7" " B" B 8" 5" " " 5" " " " " " "7 ) /1 3 11< " A/1 /1A 3A11< "9 79 7 6 0& "" 8" $! " /1 /1 3 11< " " 7 "" 9 8 " 0& "" 8" $! 1 9 Figure 8. Output Power and Efficiency versus Input Power " #2 A 3A)A0: " " " " B5" 85" 8" 86" 88" "" "5" "" 43/)9@ $! h 6" Figure 7. Power Gain and Input Return Loss versus Frequency "" " " B " " /1 /1 3 11< " B" 3 7 Figure 6. Power Gain versus Output Power 3A) /1A31/3)A<<A0: A/1 /1A 3A11< 0& hA3)A449)9@AH 7 0& " 9 8" 79 h 7" 9 6" " 5 79 5" " " " " 5" 0& "" 8" $! " " "" " " " " " "7 " hA3)A449)9@AH " #2 A 3A)A0: #2 A 3A)A0: """ " 7 ) /1 3 11< Figure 9. Power Gain versus Output Power Figure 10. Output Power and Efficiency versus Input Power MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-216 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA """ $! 77" $! " 77" $! """ $! "" 8" 9 f MHz ZOL* Zin 880 0.91 + j2.11 1.22 + j0.12 920 0.88 + j2.65 1.00 + j0.16 960 1.6 + j2.61 1.22 + j0.22 1000 2.45 + j3.38 1.14 + j0.41 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, %0 0,% *&*&G # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 11. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5-217 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %"! %"! %"! %"! N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 20 Watts Power Gain -- 17.9 dB Efficiency -- 28% Adjacent Channel Power -- 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780) MRF9085 CASE 465A-06, STYLE 1 NI-780S MRF9085SR3, MRF9085LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model MRF9085 MRF9085SR3/MRF9085LSR3 M2 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5-218 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 8.0 -- S Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 73 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.9 -- pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) (1) Part is internally input matched. (continued) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5-219 ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 36 40 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL -- -21 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Gps -- 17.9 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) -- 40.0 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IRL -- -16 -- dB Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) P1dB -- 105 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Gps -- 17.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) -- 51 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Power Output, 1 dB Compression Point, CW (1) (VDD = 26 Vdc, IDQ = 700 mA, f1 = 960 MHz) No Degradation In Output Power P1dB -- 105 -- W (1) These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2. MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5-220 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ; : : :5 ; ; 96 97 98 9 ; ; ; 96 97 98 9 34 ) /1 9 5 6 7 8 " 9 95 9 9" 9 B1, B2, B3 C1, C9, C15, C16 C3 C4, C13 C5, C6, C12 C7, C17, C18, C19 C8 C10, C11 C14 L1 L2 N1, N2 WB1, WB2 Z1 Z2 Z3 Z4 Z5 5 6 7 8 95 9 9 " 34 /1 /1 /1 9 Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case , ATC 5.6 pF Chip Capacitor, B Case, ATC 0.8 - 8.0 Variable Capacitors, Gigatrim 8.2 pF Chip Capacitors, B Case, ATC 10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet 20 K pF Chip Capacitor, B Case, ATC 16 pF Chip Capacitors, B Case, ATC 0.6 - 4.5 Variable Capacitor, Gigatrim 7.15 nH Inductor, Coilcraft 17.5 nH Inductor, Coilcraft N-Type Panel Mount, Stripline, M/A-Com 5 Mil BeCu Shim (0.225 x 0.525) 0.219 x 0.080 Microstrip 0.150 x 0.080 Microstrip 0.851 x 0.080 Microstrip 0.125 x 0.220 Microstrip 0.123 x 0.220 Microstrip Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 PCB 0.076 x 0.220 Microstrip 0.261 x 0.220 Microstrip 0.220 x 0.630 x 0.200 Taper 0.240 x 0.630 Microstrip 0.060 x 0.630 Microstrip 0.067 x 0.630 Microstrip 0.233 x 0.630 Microstrip 0.630 x 0.220 x 0.200 Taper 0.200 x 0.220 Microstrip 0.055 x 0.220 Microstrip 0.088 x 0.220 Microstrip 0.226 x 0.220 Microstrip 0.868 x 0.080 Microstrip 0.129 x 0.080 Microstrip 0.223 x 0.080 Microstrip Arlon GX-0300-55-22, 30 mils , = 2.55 Figure 1. 865-895 MHz Broadband Test Circuit Schematic 96 : :5 97 : 9 9 98 95 9 9 : 9/1/1 9 97 : 9 98 96 9 9 9 9" 95 MRF9085 Figure 2. 865-895 MHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5-221 #2 #2 A 3A)A0: 7 h 6 " 0& 8" 6"" 1+ B1 * "" -! 1 * <#%&( 5 B7 B5" 5 $ B5 B5 <3 7" 7 76" 76 77" 77 43/)9@ $! 78" 78 8"" B5 "" 6 " <3 " $A)13$/1) <131)A0:& 8 h A3) 449)9@AH TYPICAL CHARACTERISTICS "" " #2 A 3A)A0: 6 " h 5 8 6 " 0& 6"" 77"" $! 77" $! B" B" $ " "" /1 /1 3 11< B" B" B" B5" 6' ,0*, B" B" B6" " 8 " 6 " 5" 5 h 0& 6"" 77" $! <(=* 1 * " "" /1 /1 3 11< 9 Figure 6. Power Gain, Efficiency versus Output Power MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5-222 " "" /1 /1 3 11< " " #2 h #2A 3A)A0: #2A 3A)A0: 6 ' ,0*, Figure 5. Intermodulation Distortion Products versus Output Power hA3)A449)9@AH #2 5,0 ,0*, B" Figure 4. Power Gain, Efficiency, IMD versus Output Power 7 0& 6"" 7""" $! 7"" $! " 0& 6"" 77" $! B" 5 " 8 " 6 " B" 6" -! B" 87 $! " /1 /1 3 11< B7" hA3)A449)9@AHANA9 3A0: #2 $A)13$/1)A<131)A0:& " 8 h A3)A449)9@AH $A)13$/1)A<131)A0:& Figure 3. Class AB Broadband Circuit Performance Figure 7. Power Gain, Efficiency, ACPR versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA = %0 7 $! 78 $! 2 ,&* 78 $! 7 $! 6"" 8" f MHz Zload Zsource 865 1.35 - j1.92 1.26 - j0.15 880 1.33 - j1.66 1.26 - j0.10 895 1.28 - j1.30 1.21 - j0.20 Zsource = Test circuit impedance as measured from gate to ground. Zload ) *> = Test circuit impedance as measured from drain to ground. = %0 +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 8. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 5-223 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line %"" %"" %"" N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * On-Die Integrated Input Match GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs * Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB -- 110 Watts (Typ) Power Gain @ P1dB -- 16.5 dB (Typ) Efficiency @ P1dB -- 53% (Typ) * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465-06, STYLE 1 (NI-780) (MRF9100) CASE 465A-06, STYLE 1 (NI-780S) (MRF9100SR3) MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 175 1.0 Watts W/C Storage Temperature Range Tstg -65 to +200 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.0 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF9100 MRF9100R3 MRF9100SR3 5-224 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C, 50 ohm system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 500 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(Q) 3 -- 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 8 -- S Crss -- 1.0 -- pF Output Power, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz) P1dB 100 110 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Gps 16 17 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) 47 51 -- % Input Return Loss (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f1 = 921 MHz and 960 MHz, f2 = 940 MHz) IRL Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA, f = Full GSM Band 921-960 MHz, Tone Spacing = 100 kHz) IMD Output Mismatch Stress (VDD = 26 Vdc, IDQ = 800 mA, Pout = 100 W CW, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) dB -- -- -- -20 -10 -- -- -30 -- dBc No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 5-225 9 3 ; 3 34 ) /1 97 9 35 9 5 9 95 6 9 98 5 7 8 9 " /1 9 9 96 9 34 /1 /1 95 9" Figure 1. MRF9100 Test Circuit Schematic Table 1. MRF9100 Test Circuit Component Designations and Values Designators Description C1, C13 22 pF, 100B Chip Capacitors, ATC #100B220GW C2, C12 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW C3 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW C4, C5 10 pF, 100B Chip Capacitors, ATC #100B100GW C6, C14 33 pF, 100B Chip Capacitors, ATC #100B330JW C7, C8, C9, C10 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW C11 2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW C15 10 F, 35 V Tantalum Chip Capacitor, Vishay-Sprague #293D106X9035D R1, R2 10 kW, 1/8 W Chip Resistors (0805) R3 1 kW, 1/8 W Chip Resistor (0805) Z1 0.495 x 0.087 Microstrip Z2 0.657 x 0.087 Microstrip Z3 0.324 x 0.087 Microstrip Z4 0.429 x 0.087 Microstrip Z5 0.250 x 0.790 Microstrip Z6 0.535 x 0.790 Microstrip Z7 0.312 x 0.790 Microstrip Z8 0.409 x 0.790 Microstrip Z9 0.432 x 0.087 Microstrip Z10 0.220 x 0.087 Microstrip Z11 0.828 x 0.087 Microstrip Z12 0.485 x 0.087 Microstrip Z13 1.602 x 0.087 Microstrip Substrate Taconic TLX8, Thickness 0.8 mm MRF9100 MRF9100R3 MRF9100SR3 5-226 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 9 3 3 9 96 9 9 35 9 9 95 98 9 9" 9 9 95 97 MRF9100 Figure 2. MRF9100 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 5-227 ; 95 ; 9 95 3 / 1 3 35 3 1 3 ; 9 3 ; 9 9 9 6 98 34 ) /1 96 5 9 8 97 " 9 5 34 /1 /1 9 7 9" Figure 3. MRF9100 Demo Board Schematic MRF9100 MRF9100R3 MRF9100SR3 5-228 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 2. GSM 900 Optimized Demo Board Component Designations and Values Designators Description C1 1.0 F Chip Capacitor, AVX #08053G105ZATEA (0805) C2, C5 33 pF Chip Capacitors, AVX #08051J330GBT, ACCU-P (0805) C3, C13, C14 22 F, 35 V Tantalum Chip Capacitors, Kemet #T491x226K035AS4394 C4 220 F, 63 V Electrolytic Capacitor Radial, Philips #13668221 C6 5.6 pF Chip Capacitor, AVX #08051J5R6CBT, ACCU-P (0805) C7 4.7 pF Chip Capacitor, AVX #08051J4R7CBT, ACCU-P (0805) C8 22 pF Chip Capacitor, AVX #08051J220GBT, ACCU-P (0805) C9, C10 3.9 pF Chip Capacitors, AVX #08051J3R9BBT, ACCU-P (0805) C11 2.2 pF Chip Capacitor, AVX #08051J2R2BBT, ACCU-P (0805) C12 33 pF, 100B Chip Capacitor, ATC #100B330JW P1 5.0 kW Potentiometer CMS Cermet multi-turn, Bourns #3224W R1 10 W, 1/8 W Chip Resistor (0805) R2 1.0 kW, 1/8 W Chip Resistor (0805) R3 1.2 kW, 1/8 W Chip Resistor (0805) R4 2.2 kW, 1/8 W Chip Resistor (0805) R5 100 W, 1/8 W Chip Resistor (0805) R6 1.0 W, 1/8 W Chip Resistor (0805) T1 NPN Bipolar Transistor, SOT-23, Motorola #BC847 U1 Voltage Regulator, Micro-8, Motorola #LP2951 Z1 0.916 x 0.042 Microstrip Z2 0.169 x 0.042 Microstrip Z3 0.212 x 0.042 Microstrip Z4 0.090 x 0.465 Microstrip Z5 0.465 x 0.842 Microstrip Z6 1.776 x 0.059 Microstrip Z7 1.802 x 0.059 Microstrip Z8 1.094 x 0.592 Microstrip Z9 0.085 x 0.042 Microstrip Z10 0.198 x 0.042 Microstrip Z11 0.253 x 0.191 + 0.292 x 0.061 Microstrip Z12 0.181 x 0.042 Microstrip Z13 0.282 x 0.042 Microstrip Substrate Taconic RF35, Thickness 0.5 mm, r = 3.5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 5-229 I%2 , 0 0,% 9 3 / 3 3 1 35 95 9 3 9 9 9 3 95 98 <,%# 96 97 9 9 9 <,%# 9" MRF9100 Figure 4. MRF9100 Demo Board Component Layout MRF9100 MRF9100R3 MRF9100SR3 5-230 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS " A/1 /1A 3A11< " #2 AA 3A)A0: "" 7 "" 0& 8" $! 19 _9 " "" 7 " " " " 3 5" 7 B B" 76 8"" 8 8" 86 0& 7"" 8" $! B """ 5" " " $ /1 /1 3 11< Figure 9. EVM and Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA hA3)A449)9@AH $AH " B" < 913A331A0:& 7 0& 7"" 8 $! " """ Figure 8. Power Gain versus Output Power " "" /1 /1 3 11< " " " Figure 7. Power Gain and Input Return Loss versus Frequency " 7_9 43/)9@ $! 7 _9 6 5 "" 7" 19 B"_9 7 #2 AA 3A)A0: B" 3 ) /1A31/3)A<<A0: #2 AA 3A)A0: B " 7"" 8 "" 0& 7"" 19 _9 5 Figure 6. Output Power and Efficiency versus Input Power " #2 6 ) /1 3 11< 5" 0& 7"" 19 _9 " """ 5 7" Figure 5. Power Gain versus Output Power 7 7 $! /1 /1 3 11< " "" 7"" 8 8" $! 8" $! " """ 6 7 $! A3)A449)9@AH 8 7 0& 7"" 8 $! B B" O "" -! B B6" B6 O "" -! B7" "" " B7 " " /1 /1 3 11< "" Figure 10. Spectral Regrowth versus Output Power MRF9100 MRF9100R3 MRF9100SR3 5-231 7" $! """ $! """ $! 7" $! 7"" " 9 f MHz ZOL* Zin 840 2.04 + j0.57 1.62 - j1.65 880 2.20 + j0.16 1.88 - j2.45 920 2.00 - j0.44 1.79 - j2.40 960 2.16 - j0.25 1.47 - j1.82 1000 2.62 - j0.25 1.58 - j1.52 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 11. Series Equivalent Input and Output Impedance MRF9100 MRF9100R3 MRF9100SR3 5-232 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 26 Watts Power Gain -- 16 dB Efficiency -- 26% Adjacent Channel Power -- 750 kHz: -45 dBc @ 30 kHz BW 1.98 MHz: -60 dBc @ 30 kHz BW * Integrated ESD Protection %" %" 880 MHz, 120 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters CASE 375B-04, STYLE 1 NI-860 MRF9120 CASE 375H-03, STYLE 1 NI-860S MRF9120S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9120 MRF9120S 5-233 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) -- 3.8 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) -- 0.17 0.4 Vdc gfs -- 5.3 -- S Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 50 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2 -- pF Characteristic OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (1) (1) Each side of device measured separately. (continued) MRF9120 MRF9120S 5-234 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 15 16.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 36 39 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL -- -16 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Gps -- 16.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) -- 40.5 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) IMD -- -30 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) IRL -- -13 -- dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) P1dB -- 120 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Gps -- 16 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) -- 51 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) No Degradation In Output Power (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9120 MRF9120S 5-235 : :5 : 9 ; 9" 95" 34 ) /1 3 7 " 97 95 7 96 " 98 6 9 8 9 /1 9 5 96 3 : 9" 6 8 5 97 :%= 9 : 6 34 /1 /1 95 9 9 9 96 98 9 : ; 98 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 9 ; 9 9 9 5 ; 9 :%= ; 0.420 x 0.080 Microstrip 0.090 x 0.420 Microstrip 0.125 x 0.220 Microstrip 0.095 x 0.220 Microstrip 0.600 x 0.220 Microstrip 0.200 x 0.630 Microstrip 0.500 x 0.630 Microstrip Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26 Z27 ; ; 95 9 ; 97 0.040 x 0.630 Microstrip 0.040 x 0.630 Microstrip 0.330 x 0.630 Microstrip 0.450 x 0.630 Microstrip 0.750 x 0.220 Microstrip 0.115 x 0.420 Microstrip 0.130 x 0.080 Microstrip 0.350 x 0.080 Microstrip Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9120 MRF9120S 5-236 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. 880 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1, B3, B5, B6 Long Ferrite Beads, Surface Mount 95F787 Newark B2, B4 Short Ferrite Beads, Surface Mount 95F786 Newark C1, C2 68 pF Chip Capacitors, B Case 100B680JP500X ATC C3, C6 0.8 - 8.0 pF Variable Capacitors 44F3360 Newark C4 7.5 pF Chip Capacitor, B Case 100B7R5JP150X ATC C5 3.3 pF Chip Capacitor, B Case 100B3R3CP150X ATC C7, C8 11 pF Chip Capacitors, B Case 100B110BCA500X ATC C9, C10, C21, C22 51 pF Chip Capacitors, B Case 100B510JP500X ATC C11, C12 6.2 pF Chip Capacitors, B Case 100B6R2BCA150X ATC C13 4.7 pF Chip Capacitor, B Case 100B4R7BCA150X ATC C14 5.1 pF Chip Capacitor, B Case 100B5R1BCA150X ATC C15 3.0 pF Chip Capacitor, B Case 100B2R7BCA150X ATC C16 2.7 pF Chip Capacitor, B Case 100B3R0BCA150X ATC C17 0.6 - 4.5 pF Variable Capacitor 44F3358 Newark C18, C19 47 pF Chip Capacitors, B Case 100B470JP500X ATC C20 0.4 - 2.5 pF Variable Capacitor 44F3367 Newark C29, C30 10 F, 35 V Tantalum Chip Capacitors 93F2975 Newark C23, C24, C25, C26 22 F, 35 V Tantalum Chip Capacitors 92F1853 Newark C27, C28 220 F, 50 V Electrolytic Capacitors 14F185 Newark Balun 1, Balun 2 Xinger Surface Mount Balun Transformers 3A412 Anaren L1, L2 12.5 nH Mini Spring Inductors A04T-5 Coilcraft R1, R2 510 , 1/4 W Chip Resistors WB1, WB2, WB3, WB4 10 mil Brass Wear Blocks Board Material 30 mil Glass Teflon, r = 2.55 Copper Clad, 2 oz Cu 900 MHz Push-Pull Rev 01B CMR PCB Etched Circuit Board 900 MHz Push-Pull Rev 01B CMR 95" :5 Garret $348" 8""A$! /<A / 3*.A": : 9" ) /1 9 9 9 3 98 : 98 : : 9 96 :%= :5 95 9 : 9 97 9/1/1A3 3 9 9 9 : :%= 96 : 9 96 98 /1 /1 9 95B9 97 9" 9 95 9 : 97 Figure 2. 865-895 MHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9120 MRF9120S 5-237 6 #2 " 0& " ? "" 1 * <#%&( "" -! 5 $ 3 5 B5" B5 B5 " B5 7" 7 76" 76 77" 77 78" 8"" 78 B57 B" B B B B7 3A) /1A31/3)A<<A0: " $A)13$/1) <131)A0:& #2 A 3A)A0: 7 h A3) 449)9@AH TYPICAL CHARACTERISTICS 43/)9@ $! Figure 3. Class AB Broadband Circuit Performance "" "" 6 """ 7"" 0& 77"" $! 77" $! B" B" 0& 77"" $! 77" $! B5" 7"" B" """ B" B" /1 /1 3 11< 7 0& ? "" 77"" $! 77" $! B" 5,0 ,0*, B" ' ,0*, 6' ,0*, B" B6" " #2 #2A 3A)A0: $A)13$/1)A<131)A0:& Figure 5. Intermodulation Distortion versus Output Power B" B5" "" /1 /1 3 11< Figure 4. Power Gain versus Output Power B" " "" " "" "" " " 5" " " 0& ? "" 77" $! 7 "" /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power MRF9120 MRF9120S 5-238 " """ " "" " hA3)A449)9@AH 6 #2 A 3A)A0: $A)13$/1)A<131)A0:& 7 " /1 /1 3 11< Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " 7 #2 #2 A 3A)A0: " " " 0& ? "" 77"" $! 77" $! " B" 7 B" $ " hA3)A449)9@AH $A)13$/1)A<131)A0:& TYPICAL CHARACTERISTICS B" "" /1 /1 3 11< 7 " #2 #2 A 3A)A0: " " 0& ? "" 77" $! <B86 = <G& %(( 1,%& 9 0*2 7 ', (' 5 " B" B" 6" -! 7 B" 87 $! " " "" B7" hA3)A449)9@AH 9 3AE9)1A9))A 3A31A0: Figure 8. Power Gain, Efficiency and IMD versus Output Power /1 /1 3 11< Figure 9. Power Gain, Efficiency and ACPR versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9120 MRF9120S 5-239 = %0 78 $! 7 $! 7 $! 2 ,&* 78 $! x "" " Zload f MHz Zsource 865 4.89 - j0.2 4.9 - j0.5 880 4.54 + j0.07 4.6 - j0.32 895 3.29 - j1.3 4.2 - j0.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 10. Series Equivalent Input and Output Impedance MRF9120 MRF9120S 5-240 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %" %" %" N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. * Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB -- 135 Watts Power Gain -- 16.5 dB @ 130 Watts Output Power Efficiency -- 48% @ 130 Watts Output Power * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. GSM/EDGE 921-960 MHz, 130 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 (NI-780) (MRF9130L) CASE 465A-06, STYLE 1 (NI-780S) (MRF9130LSR3) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 298 1.7 Watts W/C Storage Temperature Range Tstg -65 to +200 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C7 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.6 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9130L MRF9130LR3 MRF9130LSR3 5-241 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vds, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vds, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 450 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) -- 3.6 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.2 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 9 Adc) gfs -- 12 -- S Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 110 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 4.4 -- pF Power Output, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 921 and 960 MHz) P1dB 120 135 -- W Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) Gps 15.5 16.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) 43 48 -- % Input Return Loss (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) IRL -- -12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 130 W CW, IDQ = 1000 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture) No Degradation In Output Power Before and After Test (1) Part is internally input matched. MRF9130L MRF9130LR3 MRF9130LSR3 5-242 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 ; 9 3 9 9 95 ; 9 9 35 34 ) /1 97 96 5 98 9" 9 /1 9 95 9 98 9 9" 9 9 96 34 /1 /1 9 97 Figure 1. 921-960 MHz Test Circuit Schematic Table 1. 921-960 MHz Test Circuit Component Designations and Values Designators Description C1, C4 10 F, 35 V Tantalum Capacitors, Vishay-Sprague #293D106X9035D C2, C5 100 nF Chip Capacitors (1206), AVX #1206C104KATDA C3, C8, C21, C22 22 pF, 100B Chip Capacitors, ATC #100B220C C6 33 pF, 100B Chip Capacitor, ATC #100B330JW C7 1.0 pF, 100B Chip Capacitor, ATC #100B1R0BW C9 4.7 pF, 100B Chip Capacitor, ATC #100B4R7BW C10 8.2 pF, 100B Chip Capacitor, ATC #100B8R2CW C11 10 pF, 100B Chip Capacitor, ATC #100B100GW C12, C13 12 pF, 100B Chip Capacitors, ATC #100B120GW C14, C15 2.7 pF, 100B Chip Capacitors, ATC #100B2R7BW C16, C17, C18 3.9 pF, 100B Chip Capacitors, ATC #100B3R9BW C19 3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW C20 1.8 pF, 100B Chip Capacitor, ATC #100B1R8BW R1 18 kW, 1/8 W Chip Resistor (1206) R2 10 kW, 1/8 W Chip Resistor (1206) R3 1.0 kW, 1/8 W Chip Resistor (1206) Z1 0.117 x 0.600 Microstrip Z2 0.117 x 1.851 Microstrip Z3 1.074 x 1.068 Microstrip Z4 1.074 x 0.980 Microstrip Z5 0.117 x 1.933 Microstrip Z6 0.117 x 0.605 Microstrip Substrate Taconic TLX8, Thickness 0.8 mm RF Connectors, Type N, Macom #3052-1648-10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9130L MRF9130LR3 MRF9130LSR3 5-243 9 9 :< </ @ 3 9 3 96 97 9 9 95 98 35 9" 9 9 9 95 9 9 98 9" 9 97 9 96 MRF9130L , 0 , 0 Figure 2. 921-960 MHz Test Circuit Component Layout MRF9130L MRF9130LR3 MRF9130LSR3 5-244 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS #2 6 #2A 3A)A0: " " B 5" B" " B 3 5" 7 0& """ 5 8"" 8" 8" 8" 87" B" 3A) /1A31/3)A<<A0: 7 B """ 43/)9@ $! Figure 3. Power Gain and Input Return Loss versus Frequency " 6 " #2 5" " 7 0& """ 8" $! " "" #2 A 3A)A0: 6 7 hA3)A449)9@AH " #2A 3A)A0: 7 6 """ 7"" "" 7 0& 8" $! " "" """ " " /1 /1 3 0: Figure 5. Power Gain versus Output Power 7 7 19 B"9 6 #2 A 3A)A0: #2 A 3A)A0: """ /1 /1 3 11< Figure 4. Power Gain and Efficiency versus Output Power 5" 7 5 "" """ 8" $! 9 6 "9 79 7 0& """ 8" $! " "" """ " "" /1 /1 3 11< /1 /1 3 11< Figure 6. Power Gain versus Output Power Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA """ MRF9130L MRF9130LR3 MRF9130LSR3 5-245 5" " " $ " "" " hA3)A449)9@AH $AH " < 913A331A0:& 7 0& 7"" 8" $! 7 " B" " " 7 0& 7"" 8" $! B B" B O "" -! B6" B6 O "" -! B7" B7 " /1 /1 3 11< /1 /1 3 11< Figure 8. EVM and Efficiency versus Output Power Figure 9. Spectral Regrowth versus Output Power "" NOTE: Curves on Figure 8 and 9 gathered on a GSM EDGE optimized text fixture. MRF9130L MRF9130LR3 MRF9130LSR3 5-246 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA """ $! 77" $! """ $! 77" $! 7 0& """ 5 9 f MHz ZOL* Zin 880 0.63 + j1.66 0.82 + j0.36 920 0.67 + j1.88 0.72 + j0.30 960 0.82 + j2.18 0.74 + j0.37 1000 0.86 + j2.56 0.69 + j0.79 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 10. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9130L MRF9130LR3 MRF9130LSR3 5-247 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %! %! %! N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical N-CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 25 Watts Avg. Power Gain -- 17.8 dB Efficiency -- 25% Adjacent Channel Power -- 750 kHz: -47 dBc @ 30 kHz BW * Internally Matched, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 880 MHz, 135 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF9135L CASE 465A-06, STYLE 1 NI-780S MRF9135LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 298 1.7 Watts W/C Storage Temperature Range Tstg -65 to +200 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.6 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C7 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF9135L MRF9135LR3 MRF9135LSR3 5-248 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C, 50 ohm system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 450 A) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1100 mAdc) VGS(Q) 3 3.7 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 9 Adc) gfs -- 12 -- S Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 109 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 4.4 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 880.0 MHz) Gps 16 17.8 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 880.0 MHz) 22 25 -- % ACPR -- -47 -45 dBc Input Return Loss (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 880.0 MHz) IRL -- -13.5 -9 dB Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) Gps -- 17 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) -- 24 -- % ACPR -- -46 -- dBc IRL -- -12.5 -- dB Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 135 W CW, IDQ = 1100 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation In Output Power MRF9135L MRF9135LR3 MRF9135LSR3 5-249 ; : ; 95 ; 98 34 ) /1 98 : 97 96 5 6 7 " 9 8 9" 9 5 97 6 ; ; 9" 9 9 7 8 34 /1 /1 96 9 /1 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 95 9 9 0.430 x 0.080 Microstrip 0.430 x 0.080 Microstrip 0.800 x 0.080 Microstrip 0.200 x 0.220 Microstrip 0.110 x 0.220 Microstrip 0.175 x 0.220 Microstrip 0.200 x 0.220 x 0.630 Taper 0.250 x 0.630 Microstrip 0.050 x 0.630 Microstrip 0.050 x 0.630 Microstrip 9 95 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 9 9 9 0.105 x 0.630 Microstrip 0.145 x 0.630 Microstrip 0.200 x 0.630 x 0.220 Taper 0.180 x 0.220 Microstrip 0.110 x 0.220 Microstrip 0.200 x 0.220 Microstrip 0.900 x 0.080 Microstrip 0.360 x 0.080 Microstrip 0.410 x 0.080 Microstrip Arlon GX-0300-55-22, 30 mil, r = 2.55 Figure 1. 880 MHz Test Circuit Schematic Table 1. 880 MHz Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1, B2 Short Ferrite Beads, Surface Mount 95F786 Newark C1, C7, C17, C18 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2, C16 0.6-4.5 Gigatrim Variable Capacitors 44F3360 Newark C3 8.2 pF Chip Capacitor, B Case 100B8R2BP 500X ATC C4, C15 0.8-8.0 Gigatrim Variable Capacitors 44F3360 Newark C5, C6 12 pF Chip Capacitors, B Case 100B120JP 500X ATC C8 20K pF Chip Capacitor, B Case 200B203MP50X ATC C9, C20, C21, C22 10 F, 35 V Tantulum Capacitors 93F2975 Newark C10, C11, C12, C13 7.5 pF Chip Capacitors, B Case 100B7R5JP 500X ATC C14 11 pF Chip Capacitor, B Case 100B110JP 500X ATC C19 0.56 F, 50 V Chip Capacitor C1825C564K5RA7800 Kemet C23 470 F Electrolytic Capacitor 14F185 Newark L1, L2 12.5 nH Coilcraft inductors A04T-5 Coilcraft WB1, WB2 10 mil Brass Shim (0.205 x 0.530) RF-Design Lab RF-Design Lab MRF9135L MRF9135LR3 MRF9135LSR3 5-250 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 95 98 : 97 9" 9 9 98 : 96 9" 9 9 97 : 9 : 9 9 95 95 9 9 96 9 CUT OUT AREA 9 9 MRF9135L 900 MHz 3*.B" Figure 2. 880 MHz Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 5-251 TYPICAL CHARACTERISTICS 6 5" 3 5 0& .( "" )B9$ <B8 = <G& %(( 1,%& 9 0*2 7 ', (' 5 " 7" 7 B" B5" B B" 9 3 B" B" 76" 76 77" 77 78" 78 B B B" 8"" B7 3 ) /1A31/3)A<<A0: #2 9 3A0:& #2 AA 3A)A0: 7 h A3) 449)9@AH 5 8 43/)9@ $! Figure 3. Class AB Broadband Circuit Performance " 7 5" 6 "" 6 77" " ' ,0*, 6' ,0*, B6" B7" "" B" " "" Figure 5. Intermodulation Distortion versus Output Power 5,0 ,0*, B" 5" Figure 4. Power Gain versus Output Power B" B" " B" /1 /1 3 11< 0& "" 77" $! 77" $! B5" 77" B" /1 /1 3 11< B" B" B5" "" #2 AA 3A)A0: $ )13$/1)A<131)A0:& 0& 77" $! 77" $! B" " " " " 7 5" " "" " #2 " 0& "" 77" $! " "" /1 /1 3 11< /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9135L MRF9135LR3 MRF9135LSR3 5-252 A3)A449)9@AH 0& 77" $! 77" $! 7 #2 AA 3A)A0: $ )13$/1)A<131)A0:& 8 " " MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " " #2 " " 7 " 0& "" 77" $! 77" $! B" B" $ B" "" " A3)A449)9@AH #2 AA 3A)A0: 7 $ )13$/1)A<131)A0:& TYPICAL CHARACTERISTICS /1 /1 3 11< " " #2 #2 AA 3A)A0: 7 " " 0& "" 77" $! )B9$ <B8 = <G& %(( 1,%& 9 0*2 7 ', (' 5 " 9 3 6" -! 7 1 87 $! " B" B" B" B7" " A3)A449)9@AH 9 3AE9)1A9))A 3A31A0:& Figure 8. Power Gain, Efficiency and IMD versus Output Power /1 /1 3 11< Figure 9. N-CDMA Performance Output Power versus Gain, ACPR, Efficiency 7 " B" B" 0: B5" 5 $! : B9 3 O 5" -! : ;9 3 O 5" -! : B1 O 5" -! : ;1 O 5" -! : B" B" B" B6" B7" B8" B8 B B" B B" B" " " " " 43/)9@ $! Figure 10. Typical CDMA Spectrum MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 5-253 78 $! 2 ,&* 7 $! 78 $! = %0 7 $! "" .( Zload f MHz Zsource 865 1.15 + j0.3 1.17 - j0.24 880 1.25 + j0.5 1.22 - j0.1 895 1.35 + j0.75 1.32 - j0.07 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 11. Series Equivalent Input and Output Impedance MRF9135L MRF9135LR3 MRF9135LSR3 5-254 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %" %" N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 40 Watts Power Gain -- 17 dB Efficiency -- 26% Adjacent Channel Power - 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 375D-04, STYLE 1 NI-1230 MRF9180 CASE 375E-03, STYLE 1 NI-1230S MRF9180S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 388 2.22 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9180 MRF9180S 5-255 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 6 -- S Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 77 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 3.8 -- pF Gps 16 17.5 -- dB 35 39 -- % IMD -- -31 -28 dBc IRL -- -15 -9 dB Gps -- 17.5 -- dB -- 38.5 -- % IMD -- -31 -- dBc IRL -- -13 -- dB P1dB -- 170 -- W Characteristic OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 700 mA, f1 = 880.0 MHz) (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MRF9180 MRF9180S 5-256 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit Gps -- 16.5 -- dB -- 55 -- % FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Drain Efficiency (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Output Mismatch Stress (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 700 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9180 MRF9180S 5-257 : ; : : 9 9 95 7 9 ; 5 " 5 95 6 9 " 9 8 9 9 97 9P 5 96 9" 7 9" 9P ; 3 34 ) /1 9 ; 96 97 96 97 5 9 /1 6 98 7 8 34 /1 /1 98 6 3 9P 9P : ; :5 9 8 9 9 5 98 : ; 9 B1, B2, B5, B6 B3, B4 C1 C2, C3, C5, C6, C12, C14, C19, C20, C21, C22 C4, C9, C10, C15, C16 C7 C8 C11, C13 C17 C18 C23, C24, C26, C27 C25, C28 C29 Coax1, Coax2 Coax3, Coax4 L1, L2, L3 L4 R1, R2 Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 0.6-4.5 pF Variable Capacitor 47 pF Chip Capacitors, B Case 12 pF Chip Capacitors, B Case 0.8-9.1 pF Variable Capacitor 7.5 pF Chip Capacitor, B Case 10 F, 35 V Tantalum Surface Mount Chip Capacitors 3.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 22 F, 35 V Tantalum Surface Mount Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.4-2.5 pF Variable Capacitor 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 18.5 nH Mini Spring Inductors, Coilcraft 12.5 nH Mini Spring Inductor, Coilcraft 510 , 1/10 W Chip Resistors Z1 Z2 Z3 Z4, Z5, Z26, Z27 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z28 Z29 Board Material 95 ; 9 ; 9 0.420 x 0.080 Microstrip 0.190 x 0.080 Microstrip 0.097 x 0.080 Microstrip 2.170 x 0.080 Microstrip 0.075 x 0.080 Microstrip 0.088 x 0.220 Microstrip 0.088 x 0.220 Microstrip 0.460 x 0.220 Microstrip 0.685 x 0.625 Microstrip 0.055 x 0.625 Microstrip 0.055 x 0.632 Microstrip 0.685 x 0.632 Microstrip 0.732 x 0.080 Microstrip 0.060 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.460 x 0.080 Microstrip 30 mil Teflon, r = 2.55, Copper Clad, 2 oz Cu Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9180 MRF9180S 5-258 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 95 : : $3487" 8""$! /<A / 3*.A" : 9 96 97 9 9 Resistor 9" 3 9 5 9 9 9 9 97 96 3 Resistor 9 9 : :5 98 CUT OUT AREA 9 95 96 97 9 9" 98 98 9 : 9 95 9 Figure 2. 880 MHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9180 MRF9180S 5-259 #2 A 3A)A0: h 5 5 B5" B5 $ B5 3 1+ B1 * $*%2,* * "" -! 1 * <#%&( " " 0& 6" 6"" 7" 7 76" 76 77" 77 43/)9@ $! 78" 78 B5 B57 8"" B" B B B B7 3A) /1A31/3)<<A0: #2 6 $A)13$/1) <131)A0:& " 7 h A3) 449)9@AH TYPICAL CHARACTERISTICS III III III III III III III """ #2 A 3A)A0: 7 6"" "" 6 "" 0& 77" $! B 77" $! 7"" B" B" B5" B5" 6""A ""A """A " "" /1 /1 3 11< Figure 5. Intermodulation Distortion versus Output Power " 0& 6"" 7 77" $! 77" $! " #2 #2A 3A)A0: $A)13$/1)A<131)A0:& B" ""A B" Figure 4. Power Gain versus Output Power B" 77"A B" B" " "" /1 /1 3 11< 0& 77" $! 77" $! " B" 5" B" 5,0A,0*, B" B6" 'A,0*, " " 6'A,0*, " "" /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power MRF9180 MRF9180S 5-260 h 7 " 0& 6"" 77" $! " "" /1 /1 3 11< " hA3)A449)9@AH 8 $A)13$/1)A<131)A0:& Figure 3. Class AB Broadband Circuit Performance " """ Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " 7 #2 #2 A 3A)A0: " " 0& 6"" 77" $! B 77" $! h " 7 B" B" $ " " "" hA3)A449)9@AH $A)13$/1)A<131)A0:& TYPICAL CHARACTERISTICS B" /1 /1 3 11< 7 " #2 #2 A 3A)A0: 0& 6"" 77" $! <Q86 = <G& %(( 1,%& 9 0*2 7 ', (' 5 h " B" B" 87 $! " B" 6" $! 7 " " B7" "" hA3)A449)9@AH 9 3AE9)1A9))A 3A31A0: Figure 8. Power Gain, Efficiency and IMD versus Output Power /1 /1 3 11< Figure 9. Power Gain, Efficiency and ACPR versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF9180 MRF9180S 5-261 7 $! 7 $! 2 ,&* = %0 78 $! 78 $! x 6"" 6" f MHz Zload Zsource 865 2.95 - j0.00 3.83 - j1.02 880 2.48 - j0.67 3.55 - j1.38 895 2.44 - j1.18 3.34 - j1.51 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 10. Series Equivalent Input and Output Impedance MRF9180 MRF9180S 5-262 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz. * Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power * Excellent Thermal Stability * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. "" "" GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF18030AR3 CASE 465F-04, STYLE 1 NI-400S MRF18030ASR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 83.3 0.48 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18030AR3 MRF18030ASR3 5-263 ELECTRICAL CHARACTERISTICS (TC = 25C, 50 ohm system unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 2 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 2 -- S Crss -- 1.3 -- pF Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) P1dB 27 30 -- Watts Common-Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Gps 13 14 -- dB Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) 46.5 50 -- % Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) IRL -- -12 -9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1805 - 1880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. MRF18030AR3 MRF18030ASR3 5-264 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 97 3 96 9" 3 9 5 9 9 9 C1 C2 C3 C4, C5 C6, C7, C8 C9 C10 R1 R2, R3 8 35 34 ) /1 ; 6 7 34 /1 /1 9 95 /1 98 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.0 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 0.3 pF, 100B Chip Capacitor 220 mF, 63 V Electrolytic Capacitor 1.0 k, 1/8 W Chip Resistor (0805) 10 k, 1/8 W Chip Resistors (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.874 x 0.087 Microstrip 1.094 x 0.087 Microstrip 0.257 x 0.633 Microstrip 0.189 x 0.394 Microstrip 0.335 x 0.394 Microstrip 0.484 x 0.087 Microstrip 0.877 x 0.087 Microstrip 0.366 x 0.087 Microstrip 0.600 x 0.087 Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic :< </ @ 335 96 9 3 9 9 98 , 0 I%2 9" 97 9 9 95 MRF18030A , 0 2##=G Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18030AR3 MRF18030ASR3 5-265 TYPICAL CHARACTERISTICS B #2 O B" #2 O 5" 5 B 3 O 5" B" 0& " 1 _9 " 3 O 6" B 7"" 7" 5" " " " 67" 7"" 7" 7" 7" 77" 8" 8"" 43/)9@ $! 43/)9@ $! Figure 4. Output Power versus Frequency "" #2 A 3A)A0: 5"" "" 5 "" 0& 7" $! 1 _9 " 7_9 0& " 7" $! 7 5" 5 5 5 57 " 7 /1 /1 3 11< /1 /1 3 0: Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 5" 5 7 0& " 7" $! 1 _9 " _9 5 8 "" " " 1 _9 " #2 AA 3A)A0: #2 AA 3A)A0: #2 AA 3A)A0: " Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 8 0& " 1 _9 " " B5" 8" 8"" 5 " " 5 5" 0& " 7" $! " " "" " #2 " " " " /1 /1 3 11< /1 /1 3 11< Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF18030AR3 MRF18030ASR3 5-266 A3)A449)9@AH #2 AA 3A)A0: " A/1 /1A 3A11< " 3 ) /1A31/3)A<<A0: "" " MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" $! 6" $! " $! " $! " 5" 9 f MHz Zin ZOL* Zin 1710 2.92 + j8.24 4.18 + j9.06 1785 3.84 + j9.75 4.59 + j9.46 1805 4.15 + j10.38 4.98 + j9.06 1840 4.04 + j10.22 6.10 + j7.63 1880 6.12 + j12.29 5.83 + j6.89 1960 6.20 + j12.29 5.55 + j6.33 1990 8.61 + j12.10 5.93 + j6.66 2110 15.19 + j11.85 3.82 + j5.33 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given power, voltage, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, and drain efficiency. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18030AR3 MRF18030ASR3 5-267 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz. * Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power * Excellent Thermal Stability * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. ""& ""& GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF18030BR3 CASE 465F-04, STYLE 1 NI-400S MRF18030BSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 83.3 0.48 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF18030BR3 MRF18030BSR3 5-268 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C, 50 ohm system unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 2 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 2 -- S Crss -- 1.3 -- pF Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) P1dB 27 30 -- Watts Common-Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Gps 13 14 -- dB Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) 46.5 50 -- % Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) IRL -- -12 -9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 - 1990 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18030BR3 MRF18030BSR3 5-269 97 3 96 98 3 9 5 6 9 9 9 C1 C2 C3 C4, C5 C6, C7, C8 C9 R1 R2, R3 Z1 8 35 34 ) /1 ; 7 34 /1 /1 9 95 /1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 220 mF, 63 V Electrolytic Capacitor 1.0 k, 1/8 W Chip Resistor (0805) 10 k, 1/8 W Chip Resistors (0805) 0.496 x 0.087 Microstrip 1.022 x 0.087 Microstrip 0.257 x 0.633 Microstrip 0.189 x 0.394 Microstrip 0.335 x 0.394 Microstrip 0.616 x 0.087 Microstrip 0.845 x 0.087 Microstrip 0.366 x 0.087 Microstrip 0.500 x 0.087 Microstrip Figure 1. 1930 - 1990 MHz Test Fixture Schematic :< </ @ 3 35 97 96 9 9 CUTOUT AREA 9 , 0 I%2 98 9 3 9 95 MRF18030B , 0 2##=G Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MRF18030BR3 MRF18030BSR3 5-270 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS " #2 O 5" 5 B" B 3 O 5" " 7" B" 3 O 0& " 1 _9 B 8"" 8" 5" " 0& " 1 _9 " " " B5" "" """ 5 " 77" 8"" 8" Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 5"" #2 AA 3A)A0: #2 AA 3A)A0: """ "" "" 5 "" 0& 8" $! 1 _9 " 0& " 8" $! 8 " " "" "" " /1 /1 3 11< /1 /1 3 11< Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power #2 AA 3A)A0: 5 5" 7 " 8" $! 1 _9 5 _9 7_9 " 1 _9 #2 AA 3A)A0: 87" "" " 8" Figure 4. Output Power versus Frequency " 8" 43/)9@ $! 43/)9@ $! /1 /1 3 11< Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " #2 5" " h " "" " 5 " " 0& " 8" $! 1 _9 " A3)A449)9@AH #2 AA 3A)A0: B A/1 /1A 3A11< #2 O " 3 ) /1A31/3)A<<A0: " " "" /1 /1 3 11< Figure 8. Power Gain and Efficiency versus Output Power MRF18030BR3 MRF18030BSR3 5-271 " $! = %0 " $! 6" $! 6" $! 2 ,&* " 5" 9 f MHz Zload Zsource 1710 2.92 - j8.24 4.18 - j9.06 1785 3.84 - j9.75 4.59 - j9.46 1805 4.15 - j10.38 4.98 - j9.06 1840 4.04 - j10.22 6.10 - j7.63 1880 6.12 - j12.29 5.83 - j6.89 1960 6.20 - j12.29 5.55 - j6.33 1990 8.61 - j12.10 5.93 - j6.66 2110 15.19 - j11.85 3.82 - j5.33 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MRF18030BR3 MRF18030BSR3 5-272 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA "#" "#" N-Channel Enhancement-Mode Lateral MOSFETs "#" Designed for PCN and PCS base station applications with frequencies from "#" 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1805 - 1880 MHz. * Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts Efficiency -- 45% (Typ) @ 60 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power * Excellent Thermal Stability * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 1.80 - 1.88 GHz, 60 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF18060A CASE 465A-06, STYLE 1 NI-780S MRF18060ALSR3, MRF18060ASR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC 25C Derate above 25C PD 180 1.03 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5-273 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.7 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 160 -- pF Output Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 740 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.7 -- pF 11.5 13 -- 43 45 -- -- -- -10 Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common-Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) IRL dB % dB No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch-to-batch consistency. MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5-274 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 3 1 35 9 34 ) /1 95 9 3 34 /1 /1 6 96 5 9 9 C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1 9 3 ; /1 100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 k Chip Resistors (0805) 2.7 k Chip Resistors (0805) 1.1 k Chip Resistor (0805) BC847 Transistor SOT-23 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.47 x 0.09 Microstrip 1.16 x 0.09 Microstrip 0.57 x 0.95 Microstrip 0.59 x 1.18 Microstrip 1.26 x 0.15 Microstrip 1.15 x 0.09 Microstrip 0.37 x 0.09 Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic :< 3 3 35 1 </ @ 95 9 3 9 9 3 96 9 9 , 0 , 0 MRF18060 Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5-275 I%2 III III III 9 T1 1 3 3 3 9 9 35 T2 2##=G ; 95 3 9 3 34 ) /1 5 Z4 9 96 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU-P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU-P (0805) 1 pF Chip Capacitor, ACCU-P (0805) 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k, SMD Potentiometer C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 6 34 /1 /1 97 T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Z1 0.159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Microstrip Z5 0.433 x 1.220 Microstrip Z6 1.039 x 0.118 Microstrip Z7 0.268 x 0.055 Microstrip Substrate = 0.5 mm Teflon Glass, r = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic I%2 3 3 35 9 3 9 1 2##=G 9 I II 1 R5 9 95 96 9 3 I II II I IIIIII I I IIIII I I I , 0 97 II I II I IIIII I II I II I I MRF18060 Figure 4. 1800 - 2000 MHz Demo Board Component Layout MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5-276 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "" 8" A/1 /1A 3A11< 6" 5 "" 5"" " "" 8 7 0& 77" $! " /1 /1 3 11< "" A/1 /1A 3A11< A/1 /1A 3A11< 6" 5 " " 0& "" " 5" " " " " 7"" 7" " " 5" " 0& "" 7 " </ @ 1 1< 77" 8"" Figure 7. Output Power versus Frequency 7" 6" " h " " " " 5 5" 5" 0& "" 77" $! " " " 5 ) /1 3 11< " B #2 " B 5 B 5" B7 B" " B B " 3 7"" " Figure 8. Output Power and Efficiency versus Input Power 6"" 5" " " " "" 7 8" " 7" 7" 43/)9@ $! #2A 3A)A0: " Figure 6. Output Power versus Supply Voltage 7" 6" " " Figure 5. Power Gain versus Output Power 8" 7" A3)A449)9@AH 8"" 43/)9@ $! B 0& "" """ "" 3A) /1A31/3)A<<A0: #2A 3A)A0: TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) B7 B" Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5-277 "" $! 6"" $! "" $! 6"" $! "" " 9 f MHz Zin ZOL* Zin 1700 0.60 + j2.53 2.27 + j3.44 1800 0.80 + j3.20 2.05 + j3.05 1900 0.92 + j3.42 1.90 + j2.90 2000 1.07 + j3.59 1.64 + j2.88 2100 1.31 + j4.00 1.29 + j2.99 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, and drain efficiency. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 10. Series Equivalent Input and Output Impedance MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5-278 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA "#"& "#"& N-Channel Enhancement-Mode Lateral MOSFETs "#"& Designed for PCN and PCS base station applications with frequencies from "#"& 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power * Excellent Thermal Stability * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1.90 - 1.99 GHz, 60 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF18060B CASE 465A-06, STYLE 1 NI-780S MRF18060BLSR3, MRF18060BSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC > = 25C Derate above 25C PD 180 1.03 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5-279 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.7 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss -- 160 -- pF Output Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 740 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.7 -- pF 11.5 13 -- 40 45 -- -- -- -10 Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common-Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch consistency. MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5-280 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 95 3 34 ) /1 98 9 9 35 9 5 9 9 C1, C3 C2 C4, C8 C5 C6 C7, C9 R1, R2 R3 ; 96 6 34 /1 /1 97 /1 10 pF, 100B Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, 100B Chip Capacitors 1.0 pF, 100B Chip Capacitor 2.2 pF, 100B Chip Capacitor 0.3 pF, 100B Chip Capacitors 10 k Chip Resistors (0805) 1.0 k Chip Resistor (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 0.60 x 0.09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Microstrip 1.38 x 0.09 Microstrip 0.79 x 0.09 Microstrip Teflon Glass Figure 1. 1930 - 1990 MHz Test Fixture Schematic :< 9 3 98 9 </ @ 9 3 35 9 9 95 96 97 , 0 , 0 MRF18060 Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5-281 I%2 III III III 9 T1 1 3 3 3 9 9 35 T2 2##=G ; 95 3 9 3 34 ) /1 5 Z4 9 96 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU-P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU-P (0805) 1 pF Chip Capacitor, ACCU-P (0805) 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k, SMD Potentiometer C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 6 34 /1 /1 97 T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Z1 0.159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Microstrip Z5 0.433 x 1.220 Microstrip Z6 1.039 x 0.118 Microstrip Z7 0.268 x 0.055 Microstrip Substrate = 0.5 mm Teflon Glass, r = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic I%2 3 3 35 9 3 9 1 2##=G 9 I II 1 R5 9 95 96 9 3 I II II I IIIIII I I IIIII I I I , 0 97 II I II I IIIII I II I II I I MRF18060 Figure 4. 1800 - 2000 MHz Demo Board Component Layout MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5-282 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "" 8" A/1 /1A 3A11< 6" 5 "" 5"" " "" 8 7 0& 77" $! " /1 /1 3 11< "" A/1 /1A 3A11< A/1 /1A 3A11< 6" 5 " " 0& "" " 5" " " " " 7"" 7" " " 5" " 0& "" 7 " </ @ 1 1< 77" 8"" Figure 7. Output Power versus Frequency 7" 6" " h " " " " 5 5" 5" 0& "" 77" $! " " " 5 ) /1 3 11< " B #2 " B 5 B 5" B7 B" " B B " 3 7"" " Figure 8. Output Power and Efficiency versus Input Power 6"" 5" " " " "" 7 8" " 7" 7" 43/)9@ $! #2A 3A)A0: " Figure 6. Output Power versus Supply Voltage 7" 6" " " Figure 5. Power Gain versus Output Power 8" 7" A3)A449)9@AH 8"" 43/)9@ $! B 0& "" """ "" 3A) /1A31/3)A<<A0: #2A 3A)A0: TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) B7 B" Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5-283 = %0 6"" $! 6"" $! "" $! 2 ,&* "" $! "" " 9 f MHz Zload Zsource 1700 0.60 - j2.53 2.27 - j3.44 1800 0.80 - j3.20 2.05 - j3.05 1900 0.92 - j3.42 1.90 - j2.90 2000 1.07 - j3.59 1.64 - j2.88 2100 1.31 - j4.00 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 10. Series Equivalent Input and Output Impedance MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 5-284 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA "! "! N-Channel Enhancement-Mode Lateral MOSFETs "! The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM-GSM EDGE 1805 - 1880 MHz. * GSM and GSM EDGE Performance, Full Frequency Band (1805-1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. GSM/GSM EDGE 1.8 - 1.88 GHz, 85 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF18085A, MRF18085AR3 CASE 465A-06, STYLE 1 NI-780S MRF18085ALSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 273 1.56 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.79 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Typical) M3 (Typical) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 5-285 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.15 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6.0 -- S Crss -- 3.6 -- pF Common-Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) Gps 13.5 15 -- dB Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) 48 52 -- % Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) IRL -- -12 -9 dB Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) P1dB 83 90 -- Watts Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch-to-batch consistency. MRF18085A MRF18085AR3 MRF18085ALSR3 5-286 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 96 34 ) /1 ; 3 9 3 C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3 6 7 8 " 98 9" 9 5 97 9 9 35 9 ; 34 /1 /1 95 /1 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB 10 pF Chip Capacitors, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, B Case, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, B Case, ATC 10 kW, 1/4 W Chip Resistors (1206) 1.0 kW, 1/4 W Chip Resistor (1206) 0.671 x 0.087 Microstrip 0.568 x 0.087 Microstrip 0.500 x 0.098 Microstrip Shorted Stub 0.610 x 00.118 Microstrip 0.331 x 1.153 Microstrip 0.063 x 1.153 Microstrip 0.122 x 0.925 Microstrip 0.547 x 0.925 Microstrip 0.394 x 0.177 Microstrip 0.180 x 0.087 Microstrip 0.686 x 0.087 Microstrip 0.294 x 0.087 Microstrip Taconic TLX8, 30 mils, r = 2.55 Figure 1. 1.80 - 1.88 GHz Test Fixture Schematic 98 3 9 9 9 3 97 9 CUT OUT AREA 35 9 <,%# 96 95 9" MRF18085A C-PP-02-01-2-Rev0 Figure 2. 1.80 - 1.88 GHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 5-287 TYPICAL CHARACTERISTICS """ 7"" #2 AA 3A)A0: #2 AA 3A)A0: 6 0& 7" $! 19 _9 "" 5 "" " #2 AA 3A)A0: 5 7 " " "" " 0& 7"" 7" $! """ "" 7_9 " "" 7 "" 5 7" " 0& 7"" 19 _9 " " " " 7"" """ 7" 7" 7" 77" 8"" /1 /1 3 11< 43/)9@ $! Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Frequency #2 O 5" #2 O 7" " B B7 B " " 0& 7"" 7" $! 19 _9 5 B 3 O 5" B" 3 O 7" 0& 7"" 19 _9 7"" 7" 8"" B B7 8" " #2 3 ) /1A31/3)A<<A0: #2 AA 3A)A0: 6 " 6" " Figure 4. Power Gain versus Output Power "_9 Figure 3. Power Gain versus Output Power 5 " " /1 /1 3 11< 19 _9 """ 7"" 7" $! 19 _9 /1 /1 3 11< " #2 AA 3A)A0: 8 6 8 5 7 A/1 /1A 3A11< " 5" " " " " " "" 43/)9@ $! /1 /1 3 11< Figure 7. Power Gain versus Frequency Figure 8. Power Gain and Efficiency versus Output Power MRF18085A MRF18085AR3 MRF18085ALSR3 5-288 A3)A449)9@AH 6 " """ MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " 88" $! = %0 88" $! 6" $! 6" $! 2 ,&* 7"" 7 9 f MHz Zload Zsource 1710 1.13 - j3.62 1.79 - j2.88 1785 1.61 - j4.23 1.82 - j3.15 1805 1.69 - j4.34 1.90 - j2.66 1880 2.83 - j5.25 2.09 - j2.77 1930 3.00 - j5.18 2.01 - j2.44 1960 4.39 - j4.97 2.01 - j2.57 1990 6.59 - j4.74 1.79 - j2.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18085A MRF18085AR3 MRF18085ALSR3 5-289 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. * GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency, and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. "!& "!& "!& GSM/GSM EDGE 1.9 - 1.99 GHz, 85 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF18085B, MRF18085BR3 CASE 465A-06, STYLE 1 NI-780S MRF18085BLSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 273 1.56 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.79 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF18085B MRF18085BR3 MRF18085BLSR3 5-290 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.18 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6.0 -- S Crss -- 3.6 -- pF Common-Source Amplifier Power Gain @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Gps 11.5 12.5 -- dB Drain Efficiency @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) 46 50 -- % Input Return Loss @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) IRL -- -12 -9 dB P1 dB Output Power (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) P1dB 80 90 -- Watts Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18085B MRF18085BR3 MRF18085BLSR3 5-291 " C1, C10 C2 C3, C6 C4 C5 C7, C8 C9 C11 R1, R2 R3 " ! 1.0 nF Chip Capacitors, B Case, ATC 10 mF, 35 V Tantalum Capacitor 10 pF Chip Capacitors, B Case, ATC 3.3 pF Chip Capacitor, B Case, ATC 4.7 pF Chip Capacitor, B Case, ATC 100 nF Chip Capacitors, ACCU-P (1206) 3.9 pF Chip Capacitor, B Case, ATC 470 mF, 63 V Electrolytic Capacitor 1.0 kW Chip Resistors (0805) 2 x 18 kW Chip Resistor (1206) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 1.654 x 0.082 Microstrip 0.207 x 0.082 Microstrip 0.362 x 1.260 Microstrip 0.583 x 0.669 Microstrip 0.449 x 0.179 Microstrip 0.877 x 0.082 Microstrip 0.326 x 0.082 Microstrip 0.030 Glass Teflon (er = 2.55) Figure 1. 1.93 - 1.99 GHz Test Fixture Schematic MRF18085B Rev 0 Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MRF18085B MRF18085BR3 MRF18085BLSR3 5-292 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " III III III " T2 Short RF Ferrite Bead, #27 430119447 1 mF Chip Capacitors, ACCU-P (0805) 1 nF Chip Capacitors, ACCU-P (0805) 10 pF Chip Capacitor, ACCU-P (0805) 1.5 pF Chip Capacitor, ACCU-P (0805) 8.2 pF Chip Capacitor, ACCU-P (0805) 1.0 pF Chip Capacitor, ACCU-P (0805) 100 mF, 63 V Electrolytic Capacitor 10 nF Chip Capacitors (0805) 10 mF, 35 V Tantalum Capacitor 8.2 pF Chip Capacitor, ACCU-P (0805) Z4 B1 C1, C2 C3, C4 C5 C7 C8 C9 C10 C11, C12 C13 C14 R1 R2 R3 R4 R5 R6, R7 T1 T2 Z1 - Z9 Substrate 10 Chip Resistor (0805) 1 k Chip Resistor (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k Chip Resistor (0805) 9 Chip Resistors (1206) (18 x 18 ) Voltage Regulator, Micro-8, Motorola #LP2951 NPN Bipolar Transistor, SOT-23, Motorola #BC847 Printed Transmission Lines 0.5 mm Rogers 4350 (er = 3.53) Figure 3. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Schematic R1 C1 D R2 T1 + C10 C13 R3 C12 C3 C2 R4 T2 B1 C14 C5 R5 R6 C4 C11 C7 C8 C9 MRF18085 Figure 4. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18085B MRF18085BR3 MRF18085BLSR3 5-293 TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) """ $A333A913A$)1/AH 7"" "" "" " 0& 8 ! " /1 /1 3 11< "" 0& 7"" 57 .( 5 5 7 .( 8 .( " " 8 Figure 5. Power Gain versus Output Power $A333A913A$)1/AH #2A 3A)A0: 8 8 8 86 43/)9@ ! 87 88 " 5 5 7 " " " " " " " 7" /1 /1 3 11< 5 " $ 5 5 5" " B 7 7" 8" 8 43/)9@ ! 0& 7"" "" Figure 9. Power Gain and IRL versus Frequency MRF18085B MRF18085BR3 MRF18085BLSR3 5-294 7 B" B" " " 7 B 5" " 57 /1 /1 3 0: B 5 7" 5 8 Figure 8. EVM and Gain versus Output Power #2A 3A)A0: 5 #2 " "" Figure 7. Power Gain versus Output Power #2A 3A)A0: 85 Figure 6. Error Vector Magnitude versus Frequency 5 8 8 8 #2 A 3A)A0: 5 " #2 5 5" " B5" B5 " " h 0& 7"" 8 ! " /1 /1 3 11< A3)A449)9@AH #2A 3A)A0: " " "" Figure 10. Power Gain and Efficiency versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) B" 3* . B" 0: 3: 5" -! : 5" -! <1 6" 2 34 " 0: / " 0: B" B5" B" B" B" B6" B7" B8" B"" B" 9**, 8 ! "" -! <#% $! Figure 11. EDGE Spectrum at 40 Watts (Avg.) Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18085B MRF18085BR3 MRF18085BLSR3 5-295 88" $! = %0 7" $! 7" $! 88" $! 2 ,&* 7"" 7 9 f MHz Zload Zsource 1805 1.43 - j3.74 2 - j3.60 1880 1.27 - j3.95 1.98 - j3.57 1930 1.5 - j4.13 2.13 - j3.16 1990 1.86 - j4.76 2.17 - j3.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 12. Series Equivalent Input and Output Impedance MRF18085B MRF18085BR3 MRF18085BLSR3 5-296 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line "%" "%" N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. * GSM and GSM EDGE Performances, Full Frequency Band Power Gain -- 13.5 dB (Typ) @ 90 Watts CW Efficiency -- 52% (Typ) @ 90 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS CASE 465B-03, STYLE 1 NI-880 MRF18090A CASE 465C-02, STYLE 1 NI-880S MRF18090AS MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.7 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18090A MRF18090AS 5-297 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.1 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.2 -- S Crss -- 4.2 -- pF 12.0 13.5 -- 47 52 -- -- -- -10 Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Gps Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch-to-batch consistency. MRF18090A MRF18090AS 5-298 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 :< ; 9 3 9 5 C1 C2, C3 C4 C5, C6 C7 C8 R1, R2 R3 Z1 Z2 6 7 95 9 9 </ @ 97 " 9 35 34 ) /1 ; 8 34 /1 /1 96 /1 10 mF, 35 V Tantalum Capacitor, Vishay-Sprague #293D106X9035D 10 pF, 100B Chip Capacitor , ATC #100B100GW 3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW 6.8 pF, 100B Chip Capacitors, ATC #100B6R8CW 12 pF, 100B Chip Capacitors, ATC #100B120GW 220 mF, 63 V Electrolytic Capacitor, Philips #13668221 10 kW, 1/8 W Chip Resistors (0805) 1.0 kW, 1/8 W Chip Resistor (0805) 0.697 x 0.087 Microstrip 0.087 x 0.197 Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB 0.819 x 0.087 Microstrip 0.181 x 0.144 Microstrip 0.383 x 1.148 Microstrip 0.400 x 1.380 Microstrip 0.351 x 0.351 Microstrip 0.126 x 0.087 Microstrip 1.280 x 0.087 Microstrip 1.275 x 0.055 Microstrip Taconic TLX8-0300, 0.030, r = 2.55 Figure 1. MRF18090A 1.80 - 1.88 GHz Test Fixture Schematic 9 9 :< 9 3 3 </ @ 97 9 9 , 0 I%2 95 CUT OUT AREA 35 96 MRF18090A Rev 4 , 0 2##=G Figure 2. MRF18090A 1.80 - 1.88 GHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18090A MRF18090AS 5-299 III III III 9 9 T1 1 3 3 3 9 3 35 </ @ ; 95 9 T2 3 9 34 ) /1 98 5 Z2 97 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 96 34 /1 /1 9" 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 2.2 k Chip Resistor (0805) R5 10 k Chip Resistor (0603) R6 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Z1 0.210 x 0.055 Microstrip Z2 0.419 x 0.787 Microstrip Z3 0.836 x 0.512 Microstrip Z4 0.164 x 0.055 Microstrip Substrate = 0.5 mm Teflon Glass Figure 3. 1.80 - 1.88 GHz Demo Board Schematic </ @ 9 3 1 3 35 , 0 9 9 3 1 97 3 9 96 9 II II I I II IIII I II IIII I 3 95 II II I I III III I III II 98 9" MRF18090A Figure 4. 1.80 - 1.88 GHz Demo Board Component Layout MRF18090A MRF18090AS 5-300 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS " 6" "" 5"" " 0& 77" $! Figure 5. Power Gain versus Output Power " " 7 " </ @ 1 1< 7 5" " 8" 5 A/1 /1A 3A11< A/1 /1A 3A11< 7" 6" " " " 0& 6" 5" " 68 7 75 7 43/)9@ ! 78 76 Figure 7. Output Power versus Frequency " "" " h 7" " " " 0& 6" 77" $! " " " 5 ) /1 3 11< " " Figure 8. Output Power and Efficiency versus Input Power " #2 #2A 3A)A0: 5" " B B" B 3 8 B" 0& 6" 5 Figure 6. Output Power versus Supply Voltage "" " " " " "" " " /1 /1 3 11< " 5 7" A3)A449)9@AH 5 6" 77" $! "" 6 7" 7 43/)9@ $! B 8" 8 3A) /1A31/3)A<<A0: #2A 3A)A0: A/1 /1A 3A11< """ B5" Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18090A MRF18090AS 5-301 7" $! = %0 " 88" $! 88" $! 7" $! 2 ,&* 6" 8" %2 9 f MHz Zload Zsource 1805 1.10 - j5.85 1.15 - j2.16 1880 1.56 - j6.75 1.13 - j2.60 1930 2.05 - j8.00 1.30 - j2.23 1990 2.30 - j7.30 0.82 - j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 10. Large Signal Input and Output Impedance MRF18090A MRF18090AS 5-302 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line "%"& "%"& N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. * GSM and EDGE Performances, Full Frequency Band Power Gain -- 13.5 dB (Typ) @ 90 Watts (CW) Efficiency -- 45% (Typ) @ 90 Watts (CW) * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1.90 - 1.99 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS CASE 465B-03, STYLE 1 (NI-880) (MRF18090B) CASE 465C-02, STYLE 1 (NI-880S) (MRF18090BS) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18090B MRF18090BS 5-303 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.1 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.2 -- S Crss -- 4.2 -- pF 12 13.5 -- 40 45 -- -- -- -10 Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch consistency. MRF18090B MRF18090BS 5-304 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 1 3 35 95 3 3 7 9 34 ) /1 C1 C2 C3, C4 C5 C6, C7 R1 R2, R3, R6 R4 R5 T1 Z1 6 8 9 34 /1 /1 " 96 9 9 9 3 5 ; /1 1.0 mF Chip Capacitor (0805) 1.0 nF Chip Capacitor (0805) 6.8 pF, 100B Chip Capacitors 220 mF, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitors 2.2 kW Chip Resistor (0805) 1.0 kW Chip Resistors (0805) 10 k Chip Resistor (0805) 6.8 k Chip Resistor (0805) BC847 SOT-23 0.85 x 0.09 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB Printed Inductance Printed Inductance (Butterfly) 0.70 x 0.09 Microstrip 0.36 x 0.09 Microstrip 0.21 x 1.25 Microstrip 0.45 x 1.18 Microstrip 1.37 x 0.05 Microstrip 0.39 x 0.09 Microstrip 1.25 x 0.09 Microstrip Teflon Glass Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic 9 35 3 :< </ @ 3 3 1 3 3 9 , 0 95 9 9 9 96 MRF18090B , 0 Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18090B MRF18090BS 5-305 III III III 9 9 T1 1 3 3 3 9 3 35 </ @ ; 95 9 T2 3 9 34 ) /1 96 98 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 5 Z2 97 34 /1 /1 9" 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 2.2 k Chip Resistor (0805) R5 10 k Chip Resistor (0603) R6 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Z1 0.491 x 0.110 Microstrip Z2 0.756 x 1.260 Microstrip Z3 1.433 x 1.260 Microstrip Z4 0.567 x 0.110 Microstrip Substrate = 0.5 mm Teflon Glass Figure 3. 1.93 - 1.99 GHz Demo Board Schematic </ @ 9 3 1 3 35 , 0 9 9 3 1 97 3 9 II II II II I I IIIIII I I II 3 95 9 96 98 9" I II I II I II I II I I MRF18090B Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout MRF18090B MRF18090BS 5-306 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS " 6" "" 5"" " 0& 88" $! 7" " " 7 " </ @ 1 1< 7 Figure 6. Output Power versus Supply Voltage " h "" A/1 /1A 3A11< "" 7" " " 0& 6" " 8 85 86 8 43/)9@ ! " 88 " 7" " 5" " " " 0& 6" 88" $! " " " Figure 7. Output Power versus Frequency 5 ) /1 3 11< " " #2 B B" 3 " 7 " Figure 8. Output Power and Efficiency versus Input Power #2A 3A)A0: 5 5" " " A/1 /1A 3A11< " Figure 5. Power Gain versus Output Power " " """ " "" /1 /1 3 11< " "" A3)A449)9@AH 5 6" 88" $! " B 0& 6" 77 8" 8 8 87 8 43/)9@ ! "" " " B" 3A) /1A31/3)A<<A0: #2A 3A)A0: A/1 /1A 3A11< """ B Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF18090B MRF18090BS 5-307 7" $! = %0 " 88" $! 88" $! 7" $! 2 ,&* 6" 8" %2 9 f MHz Zload Zsource 1805 1.10 - j5.85 1.15 - j2.16 1880 1.56 - j6.75 1.13 - j2.60 1930 2.05 - j8.00 1.30 - j2.23 1990 2.30 - j7.30 0.82 - j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 10. Large Signal Input and Output Impedance MRF18090B MRF18090BS 5-308 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line %"" %"" N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- -47 dBc @ 30 kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 4.5 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 17% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 2.0 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF19030R3 CASE 465F-04, STYLE 1 NI-400S MRF19030SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 83.3 0.48 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19030R3 MRF19030SR3 5-309 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) VGS(Q) 2 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 2 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 98.5 -- pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 1.3 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) -- 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IRL -- -13 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 12 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 33 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IRL -- -13 -9 dB Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19030R3 MRF19030SR3 5-310 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ; 9 : : 35 3 3 3 95 9 ; 9 6 : 3 3 36 9 8 7 " 96 /1 9 B1 - B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 - L4 R1 - R7 Z1 Z2 5 : ; 97 5 34 ) /1 98 :5 Short Ferrite Beads 10 pF Chip Capacitors, B Case 470 F, 35 V Electrolytic Capacitors 0.1 F Chip Capacitors, B Case 5.1 pF Chip Capacitors, B Case 22 F Tantalum Chip Capacitor 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Chip Resistors (0805) 0.080 x 0.595 Microstrip 0.080 x 0.600 Microstrip 9" Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate 34 /1 /1 0.080 x 0.480 Microstrip 0.325 x 0.280 Microstrip 0.510 x 0.200 Microstrip 0.510 x 0.200 Microstrip 0.325 x 0.280 Microstrip 0.080 x 0.480 Microstrip 0.080 x 0.530 Microstrip 0.080 x 0.671 Microstrip 0.030 x 3.00 x 5.00 Glass Teflon, Arlon Figure 1. MRF19030 Test Circuit Schematic 9 97 95 3 : : 3 9 3 : 9 35 3 :5 3 98 36 : 5 9 96 9 9" $348"5" 3*.A" Figure 2. MRF19030 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19030R3 MRF19030SR3 5-311 B 5" " B" 0& 5"" 5" 1+ B1 * $*%2,* * "" -! 1 * <#%&( B #2 " " 8"" B5" $ 8" 87" 8" 43/)9@ $! 8" """ B5 "" " 5 B5 "" B" 5"" "" B 5" B" 5"" B " " /1 /1 3 11< #2 B7" " 9$ 8 9'%*=2 4 ,+%,0 1>" )> 13449>7B5 <@)9>5 B8" " "" "" #2 A 3A)A0: #2 A 3A)A0: 0& 5"" 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" 5,0 ,0*, B" B" ' ,0*, 6' ,0*, B" B6" B7" " 5"" 5"" " /1 /1 3 11< "" "" B 8" $! 5"" 5" 1+ B1 * $*%2,* * "" -! 1 * <#%&( 5 B B #2 5 B7 B5" $ B5 B5 0& 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( " " /1 /1 3 11< Figure 7. Power Gain versus Output Power MRF19030R3 MRF19030SR3 5-312 B"" Figure 6. Intermodulation Distortion Products versus Output Power 5" 7 " /1 /1 3 11< .( 9$ Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 5 B6" Figure 5. Intermodulation Distortion versus Output Power B" " $! $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& B5" B" B" $! 77 -! B" 0& 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" 5" Figure 3. Class AB Broadband Circuit Performance B B" 0& 5" 8" $! 9'%*= <#%&( 9'%*= :%0+0'> 77 -! 5" -! $! -! $! $! B5 "" " 7 5" 5 B57 5 3) 1 1< Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $A)13$/1)A<131)A0:& 3 " E9)1A9))A 3A31)A0: B" A3)A449)9@AHA #2 A 3A)A0: " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 88" $! 88" $! = %0 2 ,&* 85" $! 85" $! 5"" 5" f MHz Zload Zsource 1930 10.57 - j7.69 5.81 - j5.01 1960 10.54 - j7.43 5.84 - j4.67 1990 10.47 - j7.21 5.84 - j4.35 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19030R3 MRF19030SR3 5-313 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line %"! %"! N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. * Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi-carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 9.5 Watts Avg. Power Gain -- 14.9 dB Efficiency -- 23.5% Adjacent Channel Power -- 885 kHz: -50 dBc @ 30 kHz BW IM3 -- -37 dBc * 100% Tested Under 2-Carrier N-CDMA * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 1990 MHz, 45 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF19045R3 CASE 465F-04, STYLE 1 NI-400S MRF19045SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 105 0.60 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.65 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MRF19045R3 MRF19045SR3 5-314 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) VGS(Q) 3 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.2 -- S Crss -- 1.8 -- pF Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in 1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Gps 13 14.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) 21 23.5 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth Centered at f1 -2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier Channel Power) IM3 -- -37 -35 dBc ACPR -- -51 -45 dBc IRL -- -16 -9 dB P1dB -- 45 -- W Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith Centered at f1 -885 kHz and f2 +885 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19045R3 MRF19045SR3 5-315 ; 9 ; 9 95 3 35 : 7 9 3 9 5 34 ) /1 96 3 : : ; ; 98 97 6 3 8 9" 9 ; " 9 34 /1 /1 95 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 1.336 x 0.081 Microstrip 0.693 x 0.081 Microstrip 1.033 x 0.047 Microstrip 0.468 x 0.047 Microstrip 0.271 x 0.460 Microstrip 0.263 x 0.930 Microstrip 1.165 x 0.047 Microstrip Z8 Z9 Z10 Z11 PCB 0.216 x 0.047 Microstrip 0.519 x 0.254 Microstrip 0.874 x 0.081 Microstrip 0.645 x 0.081 Microstrip Arlon GX0300-55-22, 30 mils, r = 2.55 NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are 0.050. Zx lengths are microstrip lengths between components, center-line to center-line. All component and z-length tolerances are 0.015, except as noted. Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Designators Description B1, B2 0.120 x 0.333 x 0.100, Surface Mount Ferrite Beads, Fair Rite #2743019446 C1, C2 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 C3, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C4, C8 24 pF Chip Capacitors, B Case, ATC #100B240JP500X C5 470 pF Chip Capacitor, B Case, ATC #100B471JP200X C6, C7 11 pF Chip Capacitors, B Case, ATC #100B110JP500X C9, C10, C12 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C13 8.2 pF Chip Capacitor, B Case, ATC #100B8R2CP500X R1 560 k, 1/4 W Chip Resistor (0.08 x 0.13) R2, R3, R4, R5 8.2 , 1/4 W Chip Resistors (0.08 x 0.13), Garrett Instruments #RM73B2B110JT W1, W2 Solid Copper Buss Wire, 16 AWG WS1, WS2 Beryllium Copper Wear Blocks (0.005 x 0.150 x 0.350) Nominal MRF19045R3 MRF19045SR3 5-316 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 9 3 : 3 35 9 97 3 C6 : 3 9 9 < 95 < 9 98 9" 96 9 95 MRF19045/S Rev-0 Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19045R3 MRF19045SR3 5-317 $5 B" B " B" 9 3 B #2 " B" " B 5 6 7 8 " B6" 5" B" " 8"" 85" " 6"" B" B 77 $! < ,&* 9'%*= :%0+0' 8 9 4 9%,,*, 87 0: *%-L.( 3% O ""H " 5 6 7 8 " " 5" 0& " 8" $! 8 $! " 77 $! < ,&* 9'%*= :%0+0' 8 9 4 9%,,*, 87 0: *%-L.( 3% O ""H , I%I=G 994 5 6 7 8 " /1 /1 3 11< .( Q9%,,*, )Q9$ Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power MRF19045R3 MRF19045SR3 5-318 B" 0& " 8" $! 8 $! B" 5" B " B" 6"" 77 $! < ,&* 9'%*= :%0+0' 8 9 4 9%,,*, 87 0: *%-L.( 3% O ""H , I%I=G 994 B B6" " " 5 6 7 8 " Figure 6. 2-Carrier N-CDMA ACPR versus Output Power " B Figure 5. 2-Carrier N-CDMA IM3 versus Output Power 6"" " "" /1 /1 3 11< .( Q9%,,*, )Q9$ " 5 88" /1 /1 3 11< .( Q9%,,*, )Q9$ #2 A 3A)A0: 9 3AE9)1A9))A 3A31A0:& " A3)A449)9@AH A/1 /1A 3A11<A9 $5A13A33 )13$/1)A<131)A0:& 5" B 8" Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power 0& " 8" $! 8 $! B" B" 9 3 43/)9@ $! Figure 3. 2-Carrier N-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power B5 B" #2 " B5" $5 /1 /1 3 11< .( Q9%,,*, )Q9$ B5" B" $5A0:& 9 3A0:& 3A0: 5" B5 " 0& " $! 9%,,*, <#%&( 77 $! < ,&* 9'%*= :%0+0' 8 9 4 9%,,*, 87 0: *%-L.( 3% O ""H 3 6" 6 0: " 50: " " 5" 5 #2 " 0& " 8" $! " " "" " " " " 5" 5 " ) /1 3 11< 9 Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA #2 A 3A)A0: 5 5 B5" 0& " 8" $! 8" $! A3)A449)9@AHA #2 A 3A)A0: " $5A0:& 9 3A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS B5" 0& " 8" $! 8" $! 5" B5 B" " B #2 " B" B $ B" " " " " "" B " " 5 0& " "" -! 1 * <#%&( 5" 3 B" B B" " #2 " B B5" $ 8"" 85" /1 /1 3 11< 8" 88" B5 "" 43/)9@ $! Figure 9. CW Two-Tone Power Gain, IMD and Drain Efficiency versus Output Power Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency B " 0& 8" $! 8" $! B5" B5 5" B" #2 A 3A)A0: $A)13$/1)A<131)A0:& B 6"" B B" " B " B" 6"" " " " " 5 B 0& 8" $! 8" $! 5" B6" " " " 5" " "" " Figure 12. CW Two-Tone Power Gain versus Output Power B" B" B" 0& " 8" $! 8" $! B" B" 5,0A,0*, B$5 O 77 $! *(,%*0 : ;$5 O 77 $! *(,%*0 : B7" 'A,0*, B8" B7" B8" " B" B6" B" B6" 77 $! 9'%*= : B5" 0:& $A)13$/1)A<131)A0:& Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power B" "" /1 /1 3 11< /1 /1 3 11< B5" " 6'A,0*, " B"" " "" /1 /1 3 11< Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B" B9 3 O 5" -! *(,%*0 : ;9 3 O 5" -! *(,%*0 : B" 43/)9@ $! Figure 14. 2-Carrier N-CDMA Spectrum MRF19045R3 MRF19045SR3 5-319 $A)13$/1)A<131)AA0:&A3A0: 5 A3)A449)9@AH #2 A 3A)A0: B " $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 88" $! = %0 85" $! 2 ,&* 85" $! 88" $! " 8 .( Q9%,,*, )B9$ f MHz Zsource Zload 1930 15.52 - j16.5 4.52 - j1.86 1960 14.24 - j14.44 3.85 - j1.04 1990 11.11 - j13.01 3.44 - j0.69 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 15. Series Equivalent Input and Output Impedance MRF19045R3 MRF19045SR3 5-320 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line %"#" %"#" %"#" N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. * Typical CDMA Performance: 1960 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 7.5 Watts Power Gain -- 12.5 dB Adjacent Channel Power -- 885 kHz: -47 dBc @ 30 kHz BW 1.25 MHz: -55 dBc @ 12.5 kHz BW 2.25 MHz: -55 dBc @ 1 MHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1990 MHz, 60 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF19060R3 CASE 465A-06, STYLE 1 NI-780S MRF19060SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 180 1.03 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19060 MRF19060R3 MRF19060SR3 5-321 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc gfs -- 4.7 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 V Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 V Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- V Crss -- 2.7 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 33 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 60 -- W Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19060 MRF19060R3 MRF19060SR3 5-322 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 35 3 ; ; 9 9 3 95 9 9 8 34 ) /1 5 9" 98 B2 - B3 C1 C2, C7 C3, C8 C4 C5 C6 C9 C10, C11 C12 R1 R2 R3 R4 Z1 Z2 Z3 6 ; :5 9 96 97 " : ; 5 6 7 34 /1 /1 9 7 9 /1 Ferrite Beads, Fair Rite, 2743019447 10 F, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 0.10 F Chip Capacitors, B Case, Kemet #CDR33BX104AKWS 5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X 6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X 22 F, 35 V Tantalum Capacitor, SMT, Sprague 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 0.4 pF - 2.5 pF Variable Capacitor, Johanson Gigatrim 1 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 560 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 15 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 0.580 x 0.074 Microstrip 0.100 x 0.074 Microstrip 0.384 x 0.074 Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.152 x 0.140 Microstrip 0.090 x 0.102 Microstrip 0.245 x 0.217 Microstrip 0.090 x 0.737 Microstrip 0.530 x 0.941 Microstrip 1.010 x 0.050 Microstrip 1.060 x 0.050 Microstrip 0.446 x 1.137 Microstrip 0.152 x 0.567 Microstrip 0.183 x 0.220 Microstrip 0.100 x 0.338 Microstrip 0.480 x 0.142 Microstrip 0.140 x 0.080 Microstrip 0.173 x 0.080 Microstrip 0.420 x 0.080 Microstrip 0.030 Glass Teflon Arlon GX-0300-55-22, 2 oz Cu Figure 1. MRF19060 Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19060 MRF19060R3 MRF19060SR3 5-323 1 1 :< 413/ 9 9 3 3 35 9 98 3 95 9 96 1 3) :< 413/ 9 : :5 97 9" 9 9 MRF19060 Figure 2. MRF19060 Test Circuit Component Layout MRF19060 MRF19060R3 MRF19060SR3 5-324 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B 5" B" 3 " 0& " "" 1+ B1 * $*%2,* * "" -! 1 * <#%&( B" B #2 " B5" $ " 8"" B 8" B5 8" 8" 87" 43/)9@ $! """ B" "" " 5 5" $! B5 8"" B" B B" B "" 6"" B" B " " " /1 /1 3 11< 9$ 8 9'%*=2 4 ,+%,0 = >" %((> 1,%&>7B5 <G&>5 " " "" B" 5,0 ,0*, ' ,0*, B" 6' ,0*, B6" B7" " #2 A 3A)A0: #2 A 3A)A0: "" 0& 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( /1 /1 3 11< Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " /1 /1 3 11< "" Figure 6. Intermodulation Products versus Output Power 6"" " B"" " B" 5 " 7 /1 /1 3 11< .( 9$ B8" 0& 6"" 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" " "" 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( 8"" B7" Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power B6" #2 " Figure 5. Intermodulation Distortion versus Output Power 5 B" 77 -! " $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& B5" B" B" B" 0& 8" $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" $! Figure 3. Class AB Broadband Circuit Performance B B" 0& 6"" 8" $! 9'%*= <#%&( 9'%*= :%0+0'> 77 -! 5" -! $! -! $! $! 5 B B B B7 #2 B5" B5 $ B5 B5 "" 7 5" B57 5 3) 1 1< Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19060 MRF19060R3 MRF19060SR3 5-325 $A)13$/1)A<131)A0:& 5 E9)1A9))A 3A31A0: " A3)A449)9@AHA #2 A 3A)A0: " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 85" $! 88" $! 85" $! 88" $! "" " f MHz ZOL* Zin 1930 1.65 + j0.67 1.85 - j0.50 1960 1.64 + j0.45 1.89 - j0.74 1990 1.60 + j0.20 1.96 - j0.94 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 9. Series Equivalent Input and Output Impedance MRF19060 MRF19060R3 MRF19060SR3 5-326 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line %"! %"! %"! %"! N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. * Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 18 Watts Avg. Power Gain -- 13.0 dB Efficiency -- 23% ACPR -- -51 dB IM3 -- -36.5 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 1990 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF19085 CASE 465A-06, STYLE 1 NI-780S MRF19085SR3, MRF19085LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 273 1.56 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.79 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-327 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) VGS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.18 0.210 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6 -- S Crss -- 3.6 -- pF Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Gps 12 13 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 21 23 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 -2.5 MHz and f2 = +2.5 MHz) IMD -- -36.5 -35 dBc Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 -885 MHz and f2 =+885 MHz) ACPR -- -51 -48 dBc IRL -- -12 -9 dB Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 850 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-328 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) -- 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 90 -- W FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-329 3 35 : ; 3 ; 9 9 95 9 96 34 ) /1 97 ; 98 9" ; 9 9 8 5 9 6 34 /1 /1 7 9 /1 Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 2743019447 Fair Rite C1 51 pF Chip Capacitor 100B510JCA500X ATC C2, C7 5.1 pF Chip Capacitors 100B5R1JCA500X ATC C3, C9 1000 pF Chip Capacitors 100B102JCA500X ATC C4, C10 0.1 F Chip Capacitors CDR33BX104AKWS Kemet C5 0.1 F Tantalum Surface Mount Capacitor T491C105M050 Kemet C6 10 pF Chip Capacitor 100B100JCA500X ATC C8 10 F Tantalum Surface Mount Capacitor T495X106K035AS4394 Kemet C11, C12 22 F Tantalum Surface Mount Capacitors T491X226K035AS4394 Kemet L1 1 Turn, 20 AWG, 0.100 ID N1, N2 Type N Flange Mounts R1 1.0 k, 1/8 W Chip Resistor R2 220 k, 1/8 W Chip Resistor R3 10 , 1/8 W Chip Resistor Z1 Microstrip 0.750 x 0.0840 Z2 Microstrip 1.090 x 0.0840 Z3 Microstrip 0.400 x 1.400 Z4 Microstrip 0.520 x 0.050 Z5 Microstrip 0.540 x 1.133 Z6 Microstrip 0.400 x 0.140 Z7 Microstrip 0.555 x 0.0840 Z8 Microstrip 0.720 x 0.0840 Z9 Microstrip 0.560 x 0.070 Board 0.030 Glass Teflon GX-0300-55-22, r = 2.55 Keene PCB Etched Circuit Boards MRF19085 Rev. 4 CMR MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-330 Motorola 3052-1648-10 Omni Spectra MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 97 9 3 9 9 9 95 CUT OUT AREA 3 96 : 35 98 9" 9 9 9 MRF19085 3*. Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-331 77 $! : B" B9 3 O 5" -! : B" B" B" B$5 O 77 $! : B56 B" B """ " 56 "" " B" " " 6' ,0*, B5 9 3 " " 5" B6" " 0& 8" $! "" -! 1 * <#%&( B B5" " B5 6"" B" B " """ B" B " "" 7" " "" /1 /1 3 11< Figure 5. Intermodulation Distortion Products versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power and IDQ 3 B" B" 7 .( 7" $5 Q9%,,*, )Q9$ $! 9%,,*, <#%&( 77 $! 9'%*= :%0+0' *%-L.( 87 O ""H , I%I=G 994 8" 8" 86" B5" B" 9 3 #2 8" " 87" B" B" 88" $5A0:& 9 3A0:& 3 ) /1A31/3)A<<A0: /1 /1 3 11< 85" B $5A13A33 )13$/1)A<131)A0:& ' ,0*, #2 " B" A3)A449)9@AH " 5,0 ,0*, B" B8 /1 /1 3 11< .( )Q9$ 5" 7 B $5 Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 0& 7" 8" $! "" -! 1 * <#%&( " B5 43/)9@ $! B" " " B5" B6" Figure 3. 2-Carrier N-CDMA Spectrum B" A3)A449)9@AHA #2 A 3A)A0: $ )13$/1)A<131)A0:& B6" B"" ;$5 O 77 $! : B7 0& 7" 876 $! 8 $! 77 $! 9'%*= :%0+0' *%-L.( 87 O ""H , I%I=G 994 #2 7" 8" $! " " 7 55 " 8 "" " " 43/)9@ $! /1 /1 3 11< Figure 7. 2-Carrier N-CDMA Broadband Performance Figure 8. CW Performance MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-332 6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA A3)A449)9@AH B5" ;9 3 O 5" -! : 5" AA) /1A 3A11< #2 AA 3A)A0: 0:& B" 77 $! : $5A0:& 9 3A0:& " A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS B6 B7 56 $ 5 B8 5 B5" 5 B5 55 " " " 6" 6 " " 5 """ 7" 5" 6"" " 0& 8" $! "" -! 1 * <#%&( " B5 7" " 3) </ @ "" /1 /1 3 11< Figure 9. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply Figure 10. Two-Tone Power Gain versus Output Power " B 5 3 5" B 0& 8" 7" "" -! 1 * <#%&( " B" B $ " B" B5" #2 8" 85" 8" 8" 8" 86" 87" 88" 3 ) /1A31/3)A<<A0: $ )13$/1)A<131)A0:& #2 AA 3A)A0:A3)A449)9@AH A3)A449)9@AH 57 7" 8" $! "" -! 1 * <#%&( #2 AA 3A)A0: B 58 $ )13$/1)A<131)A0:& TYPICAL CHARACTERISTICS B5 """ 43/)9@ $! Figure 11. Two-Tone Broadband Performance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-333 = %0 88" $! 85" $! 88" $! 2 ,&* 85" $! 7" 7 .( f MHz Zload Zsource 1930 0.75 - j2.50 1.05 - j1.95 1960 0.70 - j2.40 1.10 - j1.85 1990 0.65 - j2.35 1.05 - j1.75 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 12. Series Equivalent Input and Output Impedance MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 5-334 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line %"%" %"%" %"%" N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. * Typical CDMA Performance: 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 9 Watts Power Gain -- 10 dB Adjacent Channel Power -- 885 kHz: -47 dBc @ 30 kHz BW 1.25 MHz: -55 dBc @ 12.5 kHz BW 2.25 MHz: -55 dBc @ 1 MHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1990 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 (NI-880) (MRF19090) CASE 465C-02, STYLE 1 (NI-880S) (MRF19090S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.65 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19090 MRF19090S MRF19090SR3 5-335 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc gfs -- 7.2 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.8 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.10 -- Vdc Crss -- 4.2 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 10 11.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 33 35 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD -- -30 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 90 -- W Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 A) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19090 MRF19090S MRF19090SR3 5-336 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ; : :5 ; : ; ; 95 : 9 ; 98 98 9" 97 96 9 9 9 9 ; ; 9 9 ; 96 3 34 ) /1 5 9 9 B1, B2 B3, B34 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 3 6 34 /1 /1 95 /1 2 Ferrite Beads, Round, Ferroxcube #56-590-65-3B Ferrite Beads, Surface Mount, Ferroxcube 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim #27285 10 pF Chip Capacitors, B Case, ATC #100B100CCA500X 12 pF Chip Capacitor, B Case, ATC #100B120CCA500X 0.3 pF Chip Capacitor, B Case, ATC #100B0R3CCA500X 120 pF Chip Capacitors, B Case, ATC #100B12R1CCA500X 0.1 F Chip Capacitors, Kemet #CDR33BX104AKWS 1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X 22 F, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 10 F, 35 V Tantalum Chip Capacitors, Kemet #T495X106K035AS4394 1 F, 35 V Tantalum Chip Capacitors, Kemet #T495X105K035AS4394 8 7 9 97 L1, L2 8 Turns, #26 AWG, 0.085 OD, 0.330 Long, Copper Wire R1, R2 270 , 1/4 W Chip Resistors, Garrett Instruments #RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030 Glass Teflon, r = 2.55, 2 oz Copper, 3 x 5 Dimensions Figure 1. MRF19090 Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19090 MRF19090S MRF19090SR3 5-337 98 9" 34:5 9 9 34: 34: 34: 98 95 9 9 9 96 9 97 9 96 3 9 9 9/1/1 3 95 9 " 97 " MRF19090 Figure 2. MRF19090 Test Circuit Component Layout MRF19090 MRF19090S MRF19090SR3 5-338 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B 3 5" 0& 8" 6" "" -! 1 * <#%&( B" B " $ B5" #2 " 8"" 8" 8" 87" 8" 43/)9@ $! """ B5 "" 5" 0& 8" $! 9'%*= <#%&( 9'%*= :%0+0'> 77 -! 5" -! $! -! $! $! B" 77 -! B" $! " $! $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& B5" " B5 B" 6" B 8" B" B " /1 /1 3 11< "" " " " " /1 /1 3 11< .( B" B5" B" 5,0 ,0*, B" ' ,0*, B" B6" #2 A 3A)A0: #2 A 3A)A0: " 0& 8" $! "" -! 1 * <#%&( " " " /1 /1 3 11< Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6' ,0*, " /1 /1 3 11< "" B 8" 6" 8" $! "" -! 1 * <#%&( B7" 5 0& 6" 8" $! "" -! 1 * <#%&( 6" 5" Figure 6. Intermodulation Products versus Output Power 5 8" B6" #2 Figure 5. Third Order Intermodulation Distortion versus Output Power B" Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power B" B Figure 3. Class AB Performance versus Frequency 0& 8" $! "" -! 1 * <#%&( 8 9'%*= 4 ,+%,0 = >" %((> 1,%&>7B5 <G&>5 B B #2 B7 B5" $ B5 B5 B5 "" E9)1A9))A 3A31A0: 5 B5" 5 " 7 5" B57 5 3) 1 1< Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage MRF19090 MRF19090S MRF19090SR3 5-339 $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: B" " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 85" $! 88" $! 88" $! 85" $! " 6" 8" %2 f MHz Zin ZOL* Zin 1930 4.5 + j6.1 1.1 + j4.5 1960 4.4 + j6.0 1.1 + j4.4 1990 4.3 + j6.1 1.1 + j4.3 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 9. Series Equivalent Input and Output Impedance MRF19090 MRF19090S MRF19090SR3 5-340 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %" %" N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- -47 dBc @ 30 kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 15 Watts (Avg.) Power Gain -- 11.7 dB Efficiency -- 16% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency, High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW) Output Power * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1990 MHz, 120 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 375D-04, STYLE 1 NI-1230 MRF19120 CASE 375E-03, STYLE 1 NI-1230S MRF19120S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 389 2.22 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19120 MRF19120S 5-341 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.8 -- S Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2.5 3 3.8 Vdc Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 2 A) VDS(on) -- 0.38 0.5 Vdc Crss -- 2.8 -- pF 10.7 10.5 11.7 11.7 -- -- 30 34 -- -- -- -31 -31 -28 -27 IRL -- -12 -9 dB Gps -- 11.7 -- dB -- 34 -- % IMD -- -31 -- dB IRL -- -14 -- dB P1dB -- 120 -- Watts Gps -- 11 -- dB Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 500 mA, MRF19120 MRF19120S % 500 mA, IMD 500 mA, MRF19120 MRF19120S Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) 500 mA, Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 500 mA, f1 = 1990.0 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 1990.0 MHz) dB dB 500 mA, (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MRF19120 MRF19120S 5-342 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit -- 45 -- % FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 1990.0 MHz) 500 mA, Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 1990 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19120 MRF19120S 5-343 ; ; 95 95" ; " 96 9 9 98 9 34 ) /1 3 7 95 7 9P 9P 6 95 9 9 8 5 9 6 8 3 57 /1 9P5 97 9 9P 5 6 9" ; 5 55 5 9" 56 8 58 ; 5" 5 5 98 5 7 9 9 34 /1 /1 " 3 : 5 96 9 9 3 " 95 96 ; 95 97 ; 35 98 955 ; : 95 ; ; ; 956 95 ; 9 3 9 95 9 958 957 ; 9" B1, B2 C1, C2 C3, C4, C9, C10 C5, C12 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C31, C40 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C27, C34, C36, C42 C30, C39 C35, C44 Coax1, Coax2 Coax3, Coax4 L1 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 Ferrite Beads, Fair Rite 0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 2.0 pF Chip Capacitors, B Case, ATC 1.1 pF Chip Capacitor, B Case, ATC 0.1 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitors, B Case, ATC 91 pF Chip Capacitors, B Case, ATC 100 F, 50 V Electrolytic Capacitors, Sprague 0.039 F Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.020 F Chip Capacitors, B Case, ATC 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 1.0 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 470 F, 63 V Electrolytic Capacitors, Sprague 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH, Minispring Inductor, Coilcraft 8.0 nH, Minispring Inductor, Coilcraft 5.60 nH, Microspring Inductors, Coilcraft 1 k, 1/2 W Fixed Metal Film Resistors, Dale 270 , 1/8 W Fixed Film Chip Resistors, Dale 1.0 k, 1/8 W Fixed Film Chip Resistors, Dale 0.150 x 0.080 Microstrip Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors ; ; ; 9 9 95 9 0.320 x 0.080 Microstrip 1.050 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.135 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.300 x 0.350 Microstrip 0.150 x 0.500 Microstrip 0.075 x 0.500 Microstrip 0.330 x 0.500 Microstrip 0.100 x 0.550 Microstrip 0.175 x 0.550 Microstrip 0.045 x 0.550 Microstrip 0.190 x 0.325 Microstrip 0.080 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.565 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.470 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.03 Teflon, r = 2.55 Copper Clad, 2 oz. Cu N-Type Panel Mount, Stripline Figure 1. 1.93 - 1.99 GHz Broadband Test Circuit Schematic MRF19120 MRF19120S 5-344 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 95 95 ; 98 9 96 : 35 9 3 ; 95 97 ; 95" 95 98 95 955 96 9 96 5 3 95 9 9 98 9 9 3 3 3 9 ; 9 9 9" 9 9 : 9 9 97 95 9" 95 956 958 957 ; 9" 9 95 ; 9 $348" 9 Figure 2. MRF19120 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19120 MRF19120S 5-345 TYPICAL CHARACTERISTICS 5 0& 88"" $! 88" $! "" " " " /1 /1 3 11< 85" 8 $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& "" B" 6" "" B" B6" " """ 5"" " " /1 /1 3 11< "" " " B" B" 5,0 ,0*, B" B6" ' ,0*, " 7 0& ? "" 1+ B1 * "" -! 1 * <#%&( 6 " " " "" /1 /1 3 11< Figure 7. Power Gain, Efficiency, and IMD versus Output Power MRF19120 MRF19120S 5-346 "" " #2 " B" " " /1 /1 3 11< B7" B" $ 6' ,0*, B" " 8 " 0& ? 6" 88" $! 9$ 8 9'%*=2 4 ,+%,0 = >" %(( 1,%&>7B5 <G&>5 B" 7 77 -! O 5" -! : $! O -! : $! O $! : B" $! 77 -! 9 3 B" $! " B5 0& ? "" 88"" $! 88" $! B5" #2 A 3A)A0: #2 A 3A)A0: A449)9@AH $A)13$/1)A<131)A0:& " #2 88" Figure 6. Intermodulation Distortion Products versus Output Power 7" 86 B" Figure 5. Intermodulation Distortion versus Output Power 5 8" 43/)9@ $! Figure 4. Class AB Broadband Circuit Performance B" "" B5" $ 0& 88"" $! 88" $! B5" B B7 "" B <3 6 Figure 3. Power Gain versus Output Power B" 5 0& ? "" 8 1+ B1 * "" -! 1 * <#%&( # +*, " 7 " " " " "" A449)9@AHA9 3A0: 8 " " 6" " <3 "" """ 7 #2A 3A)A0: #2 A 3A)A0: " #2 A449)9@AH "" 5"" $A)13$/1) <131)A0:& 5 B7" /1 /1 3 11< Figure 8. Power Gain, Efficiency, and ACPR versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 88" $! = %0 88" $! 85" $! 2 ,&* 85" $! "" " Zload f MHz Zsource 1930 1.64 - j2.6 3.9 - j1.7 1960 2.10 - j2.8 4.8 - j0.8 1990 2.10 - j1.4 4.9 - j0.3 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19120 MRF19120S 5-347 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line %! %! %! N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. * Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 24 Watts Avg. Power Gain -- 13.6 dB Efficiency -- 22% ACPR -- -51 dB IM3 -- -37.0 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1990 MHz, 125 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF19125 CASE 465C-02, STYLE 1 NI-880S MRF19125S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 330 1.89 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.53 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF19125 MRF19125S MRF19125SR3 5-348 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc gfs -- 9 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1300 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.185 0.21 Vdc Crss -- 5.4 -- pF Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Gps 12 13.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) 19 22 -- % IMD -- -37 -35 dBc ACPR -- -51 -47 dBc Input Return Loss (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IRL -- -13 -9 dB Output Mismatch Stress (VDD = 26 Vdc, Pout = 125 W CW, IDQ = 1300 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) Intermodulation Distortion (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 -885 MHz and f2 +885 MHz) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19125 MRF19125S MRF19125SR3 5-349 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Gps -- 13.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) -- 35 -- % Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) IMD -- -30 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) IRL -- -13 -- dB P1dB -- 130 -- W FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz) MRF19125 MRF19125S MRF19125SR3 5-350 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 35 : 3 ; 9 9 95 96 9 34 ) /1 Z1, Z7 Z2 Z3 Z4 Z5 Z6 Z8 97 98 9" 9 ; ; ; 9 95 9 34 /1 /1 6 9 /1 0.500 x 0.084 Microstrip 1.105 x 0.084 Microstrip 0.360 x 0.895 Microstrip 0.920 x 0.048 Microstrip 0.605 x 1.195 Microstrip 0.800 x 0.084 Microstrip 0.660 x 0.095 Microstrip ; 7 5 9 ; Board PCB 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF19125 Rev. 5, CMR Figure 1. MRF19125 Test Circuit Schematic Table 1. MRF19125 Test Circuit Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite #2743019447 C1 51 pF Chip Capacitor, ATC #100B510JCA500X C2, C7 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X C3, C10 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C6 10 pF Chip Capacitor, ATC #100B100JCA500X C8 10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394 C9, C12, C13, C14 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100 ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052-1648-10 R1 1.0 k, 1/8 W Chip Resistor R2 220 k, 1/8 W Chip Resistor R3 10 , 1/8 W Chip Resistor MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19125 MRF19125S MRF19125SR3 5-351 96 9 3 : 9" 95 35 9 9 95 9 CUT OUT 3 9 9 98 97 9 9 MRF19125 Rev 5 Figure 2. MRF19125 Test Circuit Component Layout MRF19125 MRF19125S MRF19125SR3 5-352 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B8 $5 " B B5 9 3 " B6" 8 5,0 ,0*, B" 5 ' ,0*, B" 6 6' ,0*, B6" B7" " "" /1 /1 3 11< Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power B5" 8"" B" "" "" " " #2 8" 85" 8" 8" 8" 86" 87" B" B" 88" """ 43/)9@ $! Figure 6. 2-Carrier N-CDMA Broadband Performance 57 #2 7 0& 5"" 8" $! " 5 " "" "" B6 56 5"" 8" $! "" -! 1 * <#%&( B7 5 B8 $ 5 B5" 5 B5 7 55 B5 " 5 9 3 B" 0& %2 .( 5"" Figure 5. Third Order Intermodulation Distortion versus Output Power 7 " B5" /1 /1 3 11< " $5 5"" B B" Q9%,,*, )Q9$ $! 9%,,*, <#%&( 77 $! 9'%*= :%0+0' *%-L.( 87 O ""H , I%I=G 994 B" "" B" 3 7 B 6"" " " B5 " A3)A449)9@AH $5A13A33 )13$/1)A<131)A0:& 0& 8" $! "" -! 1 * <#%&( B A3)A449)9@AHA #2 A 3A)A0: /1 /1 3 11< .( )Q9$ B" AA) /1A 3A11< #2 AA 3A)A0: " " B" 5 B55 6 6 7 /1 /1 3 11< 3) </ @ Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA WIRELESS RF PRODUCT DEVICE DATA A3)A449)9@AH #2 B5" $5A0:& 9 3A0:& 3 ) /1A31/3)A<<A0: B 0& 5"" 8" $! "" -! 1 * <#%&( $ )13$/1)A<131)A0:& " B5 $5A0:& 9 3A0:& B" B7 0& 5"" 876 $! 8 $! 77 $! 9'%*= :%0+0' *%-L.( 87 0: O ""H , I%I=G 994 $ )13$/1)A<131)A0:& 5" A3)A449)9@AH A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS MRF19125 MRF19125S MRF19125SR3 5-353 6"" "" #2 AA 3A)A0: 5 5"" "" 5 8"" 0& 8" $! "" -! 1 * <#%&( "" " " B " 5 B 5" 3 0& 5"" "" -! 1 * <#%&( " " 8" 85" 8" " 5,0 ,0*, 8" 8" 77 $! : B" 0& 5"" 8" $! B" 0: $ )13$/1)A<131)A0:& $ B5" 86" 87" B5 88" """ Figure 10. Two-Tone Broadband Performance B B" B 43/)9@ $! Figure 9. Two-Tone Power Gain versus Output Power B5 B" #2 /1 /1 3 11< B5" B" 3 ) /1A31/3)A<<A0: $ )13$/1)A<131)A0:& #2 AA 3A)A0:A3)A449)9@AH TYPICAL CHARACTERISTICS ' ,0*, B5" 77 $! : B9 3 O 5" -! : ;9 3 O 5" -! : B" B B" B" B" 6' ,0*, B "" """ """ B6" B$5 O 77 $! : B"" B56 B" ;$5 O 77 $! : B """ " 56 D 1) < 9) -! 43/)9@ $! Figure 11. Intermodulation Distortion Products versus Two-Tone Tone Spacing Figure 12. 2-Carrier N-CDMA Spectrum MRF19125 MRF19125S MRF19125SR3 5-354 "" MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 85" $! = %0 88" $! " 88" $! 2 ,&* 85" $! 5"" .( f MHz Zload Zsource 1930 1.43 - j5.01 0.75 - j0.93 1960 1.51 - j4.88 0.71 - j0.89 1990 1.56 - j4.93 0.68 - j1.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 13. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF19125 MRF19125S MRF19125SR3 5-355 SEMICONDUCTOR TECHNICAL DATA "" "" The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. 2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power -- 2.1 Watts Power Gain -- 13.5 dB Efficiency -- 21% * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. CASE 360B-05, STYLE 1 NI-360 MRF21010R1 CASE 360C-05, STYLE 1 NI-360S MRF21010LSR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 43.75 0.25 W W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 5.5 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MRF21010R1 MRF21010LSR1 5-356 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 50 A) VGS(th) 2.5 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 2.5 4 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 0.5 A) VDS(on) -- 0.4 0.5 Vdc Forward Transconductance (VDS = 10 V, ID = 1 A) gfs -- 0.95 -- S Crss -- 1 -- pF Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Gps 12 13.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) 31 35 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IMD -- -35 -30 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IRL -- -12 -10 dB P1dB -- 11 -- W Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Gps -- 12 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) -- 42 -- % Output Mismatch Stress (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =10 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Degradation In Output Power Before and After Test MRF21010R1 MRF21010LSR1 5-357 3 9 ; 9 95 97 98 /1 96 9 34 ) /1 ; ; 3 6 34 /1 /1 7 5 9" 9 9 Z1 Z2 Z3 Z4 Z5 0.964 x 0.087 Microstrip 0.905 x 0.087 Microstrip 0.433 x 0.512 Microstrip 1.068 x 0.087 Microstrip 0.752 x 0.087 Microstrip Z6 Z7 Z8 PCB 0.453 x 1.118 Microstrip 0.921 x 0.154 Microstrip 0.925 x 0.087 Microstrip Taconic TLX8-0300, 0.030, r = 2.55 Figure 1. MRF21010 Test Circuit Schematic Table 1. MRF21010 Test Circuit Component Designations and Values Part C1 * Description Value, P/N or DWG Manufacturer (eared) 2.2 pF Chip Capacitor, B Case 100B2R2BW ATC (earless) 1.8 pF Chip Capacitor, B Case 100B1R8BW ATC C2 0.5 pF Chip Capacitor, B Case 100B0R5BW ATC C3, C9 10 F, 35 V Tantalum Chip Capacitors 293D106X9035D2T Sprague-Vishay C4, C7 1 nF Chip Capacitors, B Case 100B102JW ATC C5, C6 5.6 pF Chip Capacitors, B Case 100B5R6BW ATC C8 470 F, 63 V Electrolytic Capacitor C10 10 pF Chip Capacitor, B Case 100B100GW ATC N1, N2 Type N Connector Flange Mounts 3052-1648-10 Macom R1 1.0 kW Chip Resistor (0805) R2 12 W Chip Resistor (0805) * Piece part depending on eared / earless version of the device. 97 3 95 9 96 3 98 9 9 RF Input 9 9" RF Output CUTOUT AREA 9 $34"" 9BP$B""B""B" Figure 2. MRF21010 Test Circuit Component Layout MRF21010R1 MRF21010LSR1 5-358 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 3 9 9 9 1 35 3 1 9 9 3 95 96 , 0 97 9" 3 5 98 $34"" 9BP$B88B""B" Figure 3. MRF21010 Demonstration Board Component Layout Table 2. MRF21010 Demonstration Board Component Designations and Values Designators Description C1 1 mF Chip Capacitor (0805), AVX #08053G105ZATEA C2, C6 10 mF, 35 V Tantalum Capacitors, Vishay-Sprague #293D106X9035D C3, C4 6.8 pF Chip Capacitors, ACCU-P (0805), AVX #08051J6R8CBT C5 10 nF Chip Capacitor (0805), AVX #08055C103KATDA C7 1.5 pF Chip Capacitor, ACCU-P (0805), AVX #08051J2R2BBT C8, C10 0.5 pF Chip Capacitors, ACCU-P (0805), AVX #08051J0R5BBT C9 10 pF Chip Capacitor, ACCU-P (0805), AVX #08055J100GBT L1 19 mm x 1.07 mm L2 7.7 mm x 13.8 mm L3 9.3 mm x 22 mm L4 17.7 mm x 3.5 mm L5 3.4 mm x 1.5 mm R1, R6 10 W, 1/8 W Chip Resistors (0805) R2, R3 1 kW, 1/8 W Chip Resistors (0805) R4 2.2 kW, 1/8 W Chip Resistor (0805) R5 0 W, 1/8 W Chip Resistor (0805) P1 5 kW Potentiometer CMS Cermet Multi-Turn, Bourns #3224W T1 Voltage Regulator, Micro-8, Motorola #LP2951 T2 Bipolar NPN Transistor, SOT-23, Motorola #BC847 PCB Rogers RO4350, 0.5 mm, r = 3.53 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21010R1 MRF21010LSR1 5-359 B B" 5" 3 B 7 0& " "" 1+ 1 * $*%2,* * "" -! 1 * <#%&( " B" B " #2 B5" $ B5 " """ "7" " 6" " 43/)9@ $! "" B" 7" 7 0& 5" " $! 9'%*= <#%&( $! : "8 $! 9'%*=2 B" " B5" #2 " " $A)13$/1)A<131)A0:& B5 B" 7" "" B " B" 5" B B" " #2 A 3A)A0: " " "" 5" B" 7 0& "" " $! 1+ 1 * $*%2,* * "" -! 1 * <#%&( B B5" B5 B" ' ,0*, B B" B 6' ,0*, B" B B6" " " Figure 6. Intermodulation Distortion versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power 7 0& " $! 1+ 1 * $*%2,* * "" -! 1 * <#%&( 5" "" 7" " "" " $! 1+ 1 * $*%2,* * "" -! 1 * <#%&( "" B5" B5 B5 #2 B5 B57 5 $ B" " /1 /1 3 11< Figure 8. Power Gain versus Output Power MRF21010R1 MRF21010LSR1 5-360 B" 5 5,0 ,0*, /1 /1 3 11< " " 5 /1 /1 3 11< .( B9$ /1 /1 3 11< " 5 Figure 5. W-CDMA ACPR, Power Gain and Drain Efficiency versus Output Power #2 A 3A)A0: $A)13$/1)A<131)A0:& B5" 7 0& " $! 1+ 1 * $*%2,* * "" -! 1 * <#%&( B" 9 3 Figure 4. Class AB Broadband Circuit Performance B B" "" 9 3AE9)1A9))A 3A31A0: 5 B" 5" 7 5" 3) 1 1< B 5 Figure 9. Intermodulation and Gain versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $A)13$/1)A<131)A0:& " A3)A449)9@AHA #2 A 3A)A0: " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 88" $! = %0 " 5" $! 88" $! 2 ,&* 5" $! 7 "" 0: 9 f MHz Zload Zsource 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230 2.73 - j6.19 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 10. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21010R1 MRF21010LSR1 5-361 SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line "" "" N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts Output Power -- 3.5 Watts Power Gain -- 14 dB Efficiency -- 15% * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 2.2 GHz, 30 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF21030R3 CASE 465F-04, STYLE 1 NI-400S MRF21030SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 83.3 0.48 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MRF21030R3 MRF21030SR3 5-362 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mA) VGS(Q) 2 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 2 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss -- 98.5 -- pF Output Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 1.3 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) -- 33 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IMD -- -30 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IRL -- -13 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 12 13 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 31 33 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD -- -30 -27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL -- -13 -9 dB Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Mismatch Stress (VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21030R3 MRF21030SR3 5-363 : ; 9 : ; 3 9 9 97 9" 5 9 95 9 B1, B2 C1 C2 C3 C4 C5, C12 C6, C13 C7, C8 C9 C10 C11 L1, L2 R1, R2 ; 3 9 9 95 34 ) /1 6 7 8 " 34 /1 /1 98 /1 96 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 PCB Short Ferrite Beads 1 pF Chip Capacitor 4.7 pF Chip Capacitor 0.5 pF Chip Capacitor 3.9 pF Chip Capacitor 0.1 F Chip Capacitors 470 F, 63 V Electrolytic Chip Capacitors 0.3 pF Chip Capacitors 3.6 pF Chip Capacitor 22 F Tantalum Chip Capacitor 5.1 pF Chip Capacitor 12.5 nH Inductors 12 Chip Resistors (1206) 0.153 x 0.087 Microstrip 0.509 x 0.156 Microstrip 0.572 x 0.087 Microstrip 0.509 x 0.232 Microstrip 0.277 x 0.143 Microstrip 0.200 x 0.305 Microstrip 0.200 x 0.511 Microstrip 0.510 x 0.328 Microstrip 0.608 x 0.081 Microstrip Taconic TLX8, 30 mils, r = 2.55 Figure 1. MRF21030 Test Circuit Schematic 95 :< 9 : 3 : 3 97 95 : CUT OUT AREA 9 </ @ 9" : 9 9 9 9 , 0 + 9 + 98 96 MRF 21030 Rev 1 , 0 MRF21030 Rev-1 Figure 2. MRF21030 Test Circuit Component Layout MRF21030R3 MRF21030SR3 5-364 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " B" 5" " B" 7 0& 5" " 1+ B1 * $*%2,* * "" -! 1 * <#%&( B #2 " " "7" B B5" $ "" " " " 43/)9@ $! 7" B5 "" 7 0& " " $! 9'%*= <#%&( 9'%*= :%0+0'> "8 $! $! " B" 9 3 " B" B B" B " $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& B" "" " "" 5"" 5" " /1 /1 3 11< B" 5 /1 /1 3 11< .( 9$ B6" Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power B B5 B" #2 " Figure 3. Class AB Broadband Circuit Performance 7 0& " $! 1+ B1 * $*%2,* * B5" "" -! 1 * <#%&( B5" 5,0 ,0*, 7 0& " " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" B" 6' ,0*, B" ' ,0*, B" B6" " "" Figure 5. Intermodulation Distortion versus Output Power " /1 /1 3 11< "" Figure 6. Intermodulation Distortion Products versus Output Power B "" #2 A 3A)A0: #2 A 3A)A0: B 5" 5"" " "" B #2 5 " " /1 /1 3 11< Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "" B5" $ B5 5 7 0& " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B7 B5 5" " " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( 5 " 7 5" B5 5 B57 5 3) 1 1< Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21030R3 MRF21030SR3 5-365 $A)13$/1)A<131)A0:& " 3 B" 5" E9)1A9))A 3A31A0: B A3)A449)9@AHA #2 A 3A)A0: " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS = %0 6" $! " $! 6" $! 2 ,&* " $! 7 " 5" Zload f MHz Zsource 2110 15.3 - j9.4 3.7 - j0.78 2140 14.6 - j9.4 3.4 - j0.37 2170 14.3 - j8.8 3.0 + j0.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MRF21030R3 MRF21030SR3 5-366 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line "! "! N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 10 Watts Avg. Efficiency -- 23.5% Gain -- 15 dB IM3 -- -37.5 dBc ACPR -- -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 2170 MHz, 45 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF21045R3 CASE 465F-04, STYLE 1 NI-400S MRF21045SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 105 0.60 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.65 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21045R3 MRF21045SR3 5-367 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 3 -- S Crss -- 1.8 -- pF Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 13.5 15 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 21 23.5 -- % IM3 -- -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz.) ACPR -- -41 -38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz.) Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF21045R3 MRF21045SR3 5-368 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 14.9 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 36 -- % Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -30 -- dBc Two-Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -- -12 -- dB P1dB -- 50 -- W FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) -- continued Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21045R3 MRF21045SR3 5-369 35 3 3 : ; 3 9 9 95 96 9 5 9 Z1, Z9 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 ; 97 98 9" 9 " 34 ) /1 ; 6 7 34 /1 /1 9 /1 0.750 x 0.084 Transmission Line 0.160 x 0.084 Transmission Line 1.195 x 0.176 Transmission Line 0.125 x 0.320 Transmission Line 1.100 x 0.045 Transmission Line 0.442 x 0.650 Transmission Line 0.490 x 0.140 Transmission Line 0.540 x 0.084 Transmission Line 0.825 x 0.055 Transmission Line 8 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF21045 Rev. 3, CMR Board PCB Figure 1. MRF21045 Test Circuit Schematic Table 1. MRF21045 Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C2, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C7 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11 22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100 ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052-1648-10 R1 1.0 k, 1/8 W Chip Resistor R2 180 k, 1/8 W Chip Resistor R3, R4 10 , 1/8 W Chip Resistors MRF21045R3 MRF21045SR3 5-370 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 97 96 3 : 35 3 9 9 9 98 9 95 9" 3 9 : : 9 MRF21045 Figure 2. MRF21045 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21045R3 MRF21045SR3 5-371 B" $5 9 3 " " " B B" 5" B B" " ' ,0*, B 7 0& "" 5 $! $! B" B 5,0 ,0*, 6' ,0*, 5 7 " " " " 5" Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power 7 5"" B5 "" B 7 0& 5 $! $! 7 " " " 5" B B" B 7 0& " .( "" B9%,,*, B9$ " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' *%-L.( 75 0: O ""H , I%I=G 994 B5" $5 B5 9 3 B" #2 B " "8" 5" " 6" /1 /1 3 11< 43/)9@ $! Figure 5. Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance " #2 " " 5" 5 " 7 0& "" 6" $! 5 3 7 "" " "" 7 " 5" " " " " 8" B " B B $ 58 B6 57 B7 56 B8 5 5 5 B5" "" 5 $! $! B5 6 7 /1 /1 3 11< 3) </ @ Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21045R3 MRF21045SR3 5-372 B" 6"" B" #2 AA 3A)A0: 5 /1 /1 3 11< B5" B5 /1 /1 3 11< .( B9$ B B" " A3)A449)9@AH B B5" $5A0:& 9 3A0:& 3 ) /1A31/3)A<<A0: " 8 B5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $ )13$/1)A<131)A0:& B" $5A0:& 9 3A0:& B5 #2 $ )13$/1)A<131)A0:& " B5" B A3)A449)9@AHA #2 A 3A)A0: " B 7 0& "" 5 $! $! 57 $! 9'%*= :%0+0' *%-L.( 75 0: O ""H , I%I=G 994 A3)A449)9@AH $ )13$/1)A<131)A0:& 5" A3)A449)9@AH A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS "" 7 0& 5 $! $! 5"" $ )13$/1)A<131)A0:& 7 " 5" B" " " B5 #2 " " "8" 5" " B" 8" 6" /1 /1 3 11< 43/)9@ $! Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance 5,0 ,0*, B" 7 0& "" " $! B DL " $! ; DL B" ' ,0*, B B5" 57 $! : 57 $! : B9 3 O 57 $! : ;9 3 O 57 $! : B$5 O 57 $! : ;$5 O 57 $! : B" B" 6' ,0*, B" B $ " B5 B B5" B B5" B" 7 0& "" B $! ; $! " B "" 3 5" "" B" 5 6"" #2 AA 3A)A0:A3)A449)9@AH " 0: #2 AA 3A)A0: 3 ) /1A31/3)A<<A0: $ )13$/1)A<131)A0:& TYPICAL CHARACTERISTICS " B" " 5" B6" B" B B" B " " D 1) < 31) $! 43/)9@ $! Figure 11. Intermodulation Distortion Products versus Two-Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " MRF21045R3 MRF21045SR3 5-373 " $! 6" $! = %0 2 ,&* " $! 6" $! 7 0& "" " .( f MHz Zsource Zload 2110 18.88 - j8.86 3.11 - j4.18 2140 19.80 - j9.93 3.09 - j3.87 2170 19.68 - j10.44 3.12 - j3.72 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 13. Series Equivalent Input and Output Impedance MRF21045R3 MRF21045SR3 5-374 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line "#" "#" "#" N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. * Typical W-CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power -- 6.0 Watts Power Gain -- 12.5 dB Drain Efficiency -- 15% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 2170 MHz, 60 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF21060 CASE 465A-06, STYLE 1 NI-780S MRF21060SR3 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 180 0.98 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.02 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21060 MRF21060R3 MRF21060SR3 5-375 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.7 -- S Crss -- 2.7 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) 31 34 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IMD -- -30 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 60 -- W Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF21060 MRF21060R3 MRF21060SR3 5-376 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 : 35 3 ; ; 9 95 9 9 7 34 ) /1 5 98 9" B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 Z1 Z2 ; 9 96 97 8 " ; 3 9 :5 5 34 /1 /1 9 6 9 /1 Ferrite Beads, Fair Rite #2743019447 10 F, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 F Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF Chip Capacitors, ATC #100B4R7JCA500X 22 F, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 560 k, 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W Fixed Film Chip Resistor, 0.08 x 0.13 0.743 x 0.080 Microstrip 0.070 x 0.100 Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.180 x 0.100 Microstrip 0.152 x 0.293 Microstrip 0.216 x 0.100 Microstrip 0.114 x 0.410 Microstrip 0.626 x 0.872 Microstrip 1.050 x 0.050 Microstrip 0.830 x 0.050 Microstrip 0.596 x 1.040 Microstrip 0.186 x 0.315 Microstrip 0.097 x 0.525 Microstrip 0.353 x 0.138 Microstrip 0.112 x 0.080 Microstrip 0.722 x 0.080 Microstrip 0.030 Glass Teflon, Arlon GX-0300-55-22, 2 oz Cu Figure 1. MRF21060 Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21060 MRF21060R3 MRF21060SR3 5-377 1 1 :< 413/ 9 3 3 35 9 1 3) :< 413/ 9 3 : 9 95 9 :5 96 97 9 98 9 9" MRF21060 Figure 2. MRF21060 Test Circuit Component Layout MRF21060 MRF21060R3 MRF21060SR3 5-378 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B 5" B" 3 " B" B #2 " B5" $ " "7" B 7 0& " "" 1+ B1 * $*%2,* * "" -! 1 * <#%&( "" B5 " " " 43/)9@ $! 7" B" "" " 5 B" B 6"" B" B "" B" B " " " /1 /1 3 11< "" B 8"" "" 7 0& " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( " " /1 /1 3 11< Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B" 7 0& 6"" " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" B" 5,0 ,0*, B" B" ' ,0*, 6' ,0*, B6" B7" " " " /1 /1 3 11< #2 A 3A)A0: #2 A 3A)A0: 7 " /1 /1 3 11< .( B9$ "" Figure 6. Intermodulation Distortion Products versus Output Power 6"" " " B" #2 Figure 4. W-CDMA ACPR, Power Gain and Drain Efficiency versus Output Power B " Figure 5. Intermodulation Distortion versus Output Power 5 B" 8"" B" 9 3 " $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& B5 B5" B5 B B5" B 5" Figure 3. Class AB Broadband Circuit Performance 7 0& " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B" 7 0& 6"" " $! 9'%*= <#%&( 9'%*= :%0+0'> $! O "8 $! : 19 " "" " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( 5 $ B B B B7 B5" 5 B5 #2 B5 B5 "" 7 5" B57 5 3) 1 1< Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21060 MRF21060R3 MRF21060SR3 5-379 $A)13$/1)A<131)A0:& 5 E9)1A9))A 3A31A0: " A3)A449)9@AHA #2 A 3A)A0: " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 6" $! 6" $! " $! " $! 7 "" " f MHz ZOL* Zin 2110 2.40 + j0.55 3.07 + j2.05 2140 2.26 + j0.87 2.89 + j2.38 2170 2.08 + j1.23 2.66 + j2.71 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. ) *> +%2 &' 2* I%2*0 ,%0* 2 I*+** (% # # +*, 0,% *&*&G %0 *, 0=% 02 , # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 9. Series Equivalent Input and Output Impedance MRF21060 MRF21060R3 MRF21060SR3 5-380 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line "! "! "! "! N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 19 Watts Avg. Power Gain -- 13.6 dB Efficiency -- 23% IM3 -- -37.5 dBc ACPR -- -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 2170 MHz, 90 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF21085 CASE 465A-06, STYLE 1 NI-780S MRF21085SR3, MRF21085LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 224 1.28 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.78 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-381 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.18 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6 -- S Crss -- 3.6 -- pF Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13.6 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 20 23 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -- -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR -- -41 -38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (continued) MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-382 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 13.6 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 36 -- % Two-Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -- -12 -- dB P1dB -- 100 -- W Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-383 35 3 3 : ; 3 9 9 95 96 9 34 ) /1 ; Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 98 9" ; 9 9 7 5 9 97 ; 34 /1 /1 9 /1 0.750 x 0.084 Microstrip 1.015 x 0.084 Microstrip 0.480 x 0.800 Microstrip 0.750 x 0.050 Microstrip 0.610 x 0.800 Microstrip 0.885 x 0.084 Microstrip 0.720 x 0.084 Microstrip 0.800 x 0.070 Microstrip 6 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR Board PCB Figure 1. MRF21085 Test Circuit Schematic Table 1. MRF21085 Test Circuit Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C2 10 pF Chip Capacitor, ATC #100B100JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C7 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11, C12 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100 ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052-1648-10 R1 1.0 k, 1/8 W Chip Resistor R2 180 k, 1/8 W Chip Resistor R3, R4 10 , 1/8 W Chip Resistors MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-384 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 : 3 95 35 98 : CUT OUT 9 9 9 97 96 9 : 9" 3 9 9 9 MRF21085 Rev 3 Figure 2. MRF21085 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-385 #2 B" " B 9 3 B" " 5" " B B5 " 5 5" B" B B" " ' ,0*, B B" B 5,0 ,0*, " 6' ,0*, "" " /1 /1 3 11< Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power B5 B" " B 7 0& 5 $! $! """ #2 " "8" 5" " 6" 43/)9@ $! Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance " 5 5" " 7 0& """ " $! " " " "" 5" /1 /1 3 11< Figure 7. CW Performance MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-386 A3)A449)9@AH 5 B" 8" B $ " #2 B" " B" 9 3 /1 /1 3 11< B5" "" " B" $5 7" B" 7 0& Q9%,,*, Q9$ 8 .( " $! 9%,,*, <#%&( """ 57 $! 9'%*= :%0+0' *%-L.( 75 0: O ""H , I%I=G 994 7 5"" B" 3 " 6"" " A3)A449)9@AH $5A13A33 )13$/1)A<131)A0:& B5" B A3)A449)9@AHA #2 A 3A)A0: /1 /1 3 11< .( )Q9$ B #2 AA 3A)A0: B5" B " B 58 B6 57 B7 56 B8 5 5 B5" """ " $! " $! 1 * <#%&( 5 B5 A3)A449)9@AH B5 7 0& """ 5 $! $! 6 7 B5 8 3) </ @ Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $5A0:& 9 3A0:& 3 ) /1A31/3)A<<A0: " B5" $5 B $ )13$/1)A<131)A0:& B 7 0& """ 5 $! $! 57 $! 9'%*= :%0+0' *%-L.( 75 0: O ""H , I%I=G 994 $5A0:& 9 3A0:& 5" $ )13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS 5"" " """ 7" 5 6"" 5 7 0& 5 $! $! "" " B" " 3 5 B 7 0& 8" """ " $! 1 * <#%&( 5" $ B5" #2 B5 " "8 " B" 7 6" Figure 10. Two-Tone Broadband Performance " B 7 0& """ " $! B" B5" 5,0 ,0*, B" B5 0: $ )13$/1)A<131)A0:& " 43/)9@ $! Figure 9. Two-Tone Power Gain versus Output Power B" B " /1 /1 3 11< B" B" 3 ) /1A31/3)A<<A0: $ )13$/1)A<131)A0:& #2 AA 3A)A0: #2 AA 3A)A0:A3)A449)9@AH TYPICAL CHARACTERISTICS B5" 57 $! : 57 $! : B9 3 O 57 $! : ;9 3 O 57 $! : B$5 O 57 $! : ;$5 O 57 $! : B" ' ,0*, B B" 6' ,0*, B" B " B" " 5" B6" B" B B" B " " D 1) < 9) -! 43/)9@ $! Figure 11. Intermodulation Distortion Products versus Two-Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-387 6" $! = %0 " $! 6" $! 2 ,&* " $! 7 """ 8 .( f MHz Zload Zsource 2110 1.10 - j3.71 1.23 - j2.10 2140 1.11 - j3.57 1.26 - j1.92 2170 1.12 - j3.40 1.25 - j1.76 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 13. Series Equivalent Input and Output Impedance MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 5-388 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 19 Watts Avg. Power Gain -- 14.5 dB Efficiency -- 26% IM3 -- -37.5 dBc ACPR -- -40.5 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. !"%" !"%" !"%" 2170 MHz, 19 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF5S21090L CASE 465A-06, STYLE 1 NI-780S MRF5S21090LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 224 1.28 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 90 W CW Case Temperature 80C, 19 W CW C/W RJC 0.78 0.80 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-389 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2.5 2.9 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) -- 3.9 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.25 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 5 -- S Crss -- 1.7 -- pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12.5 14.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 24 26 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -- -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR -- -40.5 -38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -15 -9 dB (1) Part is internally matched both on input and output. MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-390 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 95 3 3 35 9 3 96 9" 9 97 98 34 ) /1 9 5 7 /1 " 5 8 9 9 7 6 9 9 6 ; 95 9 " 8 34 /1 /1 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 1.0856 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.347 x 0.208 Microstrip 0.090 x 0.208 Microstrip 0.650 x 0.176 Taper 0.623 x 0.610 Microstrip 0.044 x 0.881 Microstrip 0.044 x 0.869 Microstrip 1.076 x 0.446 Microstrip 0.320 x 0.393 Microstrip Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 PCB 0.609 x 0.220 Microstrip 0.290 x 0.106 Microstrip 0.290 x 0.106 Microstrip 0.080 x 0.025 Microstrip 1.080 x 0.160 Microstrip 0.180 x 0.080 Microstrip 0.260 x 0.147 Microstrip 0.500 x 0.080 Microstrip 0.199 x 0.147 Microstrip 0.365 x 0.080 Microstrip Arlon GX0300-55-22, 0.03, r = 2.55 Figure 1. MRF5S21090 Test Circuit Schematic Table 1. MRF5S21090 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 9.1 pF Chip Capacitor, B Case 100B9R1CP 500X ATC C2 8.2 pF Chip Capacitor, B Case 100B8R2CP 500X ATC C3 2.0 pF Chip Capacitor, B Case 100B2R0BP 500X ATC C4, C12 0.1 F Chip Capacitors, B Case CDR33BX104AKWS Kemet C5 5.6 pF Chip Capacitor, B Case 100B5R6CP 500X ATC C6 5.1 pF Chip Capacitor, B Case 100B5R1CP 500X ATC C7 7.5 pF Chip Capacitor, B Case 100B7R5JP 500X ATC C8 1.2 pF Chip Capacitor, B Case 100B1R2BP 500X ATC C9, C10 0.56 F Chip Capacitors, B Case 700A561MP 150X ATC C11 1000 pF Chip Capacitor, B Case 100B102JP 500X ATC C13 470 F, 35 V Electrolytic Capacitor 95F4579 Newark C14, C15 0.4 - 2.5 Variable Capacitors, Gigatrim 44F3367 Newark R1 1 kW Chip Resistor D5534M07B1K00R Newark R2 560 kW Chip Resistor CR1206 564JT Newark R3, R4 12 W Chip Resistors RM73B2B120JT Garrett Electronics W1 Wire Strap MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-391 3 9 3 9" 98 35 95 96 97 95 9 9 9 9 9 9 CUT OUT AREA 9 3 9 MRF5S21090 Rev 5 Figure 2. MRF5S21090 Test Circuit Component Layout MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-392 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 5 5" 57 $! 9'%*= :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 3 5 7 0& 8 .( 7" B9%,,*, B9$ " $! 9%,,*, <#%&( A3) 449)9@AH #2 AA 3A)A0: " #2 " " B" 8 B B5" 7 $5 6 B5 B" 9 3 "7" "" " " " B "" 7" B" $5A0:& 9 3A0:& B B" B B5" B5 3 ) /1A31/3)A<<A0: TYPICAL CHARACTERISTICS 43/)9@ $! Figure 3. 2-Carrier W-CDMA Broadband Performance "" 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( """ 7" " 5 " " "" B $5A53A33 )13$/1)A<131)A0:& #2 AA 3A)A0: 6 B" 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( B B5" " "" B5 B" """ B B" " /1 /1 3 11< "" /1 /1 3 11< Figure 4. Two-Tone Power Gain versus Output Power B" Figure 5. 3rd Order Intermodulation Distortion versus Output Power 6 B B5" 0*%= 5,0 ,0*, 50: 6 0: 5"8 A/1 /1A 3A0: $ )13$/1)A<131)A0:& 7" " 5 B5 ' ,0*, B" B 0: "6 0: 8 6' ,0*, B" B B" " &%= 7 0& 8" 7" 1+ B1 * $*%2,* *2 9**, 4,*F*&G " $! " 7 0& 7" =2*0 9 7 2*& 2*& 9**, 4,*F*&G " $! 6 5" 5 5 5 57 " 1B1) < 9) $! ) /1 3 0: Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-393 7 0& 7" 5 $! $! ? B9$ " $! O 57 $! :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 5 5" B5 #2 B" $5 " 9 3 " B" B5" B" B5" B " B " 57 $! 9'%*= : B" B" B" 0: " $5A0:& 9 3A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS B6" B7" B8" B" B" B9 3 O ;9 3 O 57 $! : 57 $! : B$5 O 57 $! : B B" B B" B B"" B B" " " Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power "8 $1:4A4913A/3<A?A$ <AAA "" " 3::1@AH " 43/)9@ $! 3 11< B9$ " "" """ """" B ;$5 O 57 $! : " 7 " MB1B3 0: Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal "7 "6 " "" " " " 7" "" " 1E E/)91) 1$ 31/3 9 1'2 %I .* (,%#' 02#=%G2 &%=&=%*0 $1:4 ' ,2 ? % #*,* 0,% &,,* * *22 % *=*.%*0 * #*,%,*2 '%.* & ,,*=%*0 I**, '% "H '* '* ,*&%= #,*0& , *%= %=,* .0* $1:4 %& , IG , $1:4 % #%,&=%, %##=&% Figure 11. MTBF Factor versus Junction Temperature MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-394 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "" $! "" $! " = %0 "" $! "" $! 2 ,&* 7 0& 7" 8 .( f MHz Zsource Zload 2100 3.4 - j5.1 2.4 - j2.0 2120 3.2 - j5.4 2.2 - j2.1 2160 3.0 - j4.4 2.1 - j1.9 2200 3.0 - j4.0 1.8 - j1.6 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 12. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 5-395 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line "%" "%" N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power -- 11.5 Watts Efficiency -- 16% Gain -- 12.2 dB ACPR -- -45 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2170 MHz, 90 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF21090 CASE 465C-02, STYLE 1 NI-880S MRF21090S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model MRF21090 MRF21090S 2 (Minimum) 1 (Minimum) Machine Model MRF21090 MRF21090S M3 (Minimum) M4 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.65 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MRF21090 MRF21090S 5-396 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.2 -- S Gate Threshold Voltage (VDS = 10 V, ID = 300 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) VGS(Q) 3 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 1 A) VDS(on) -- 0.1 0.6 Vdc Crss -- 4.2 -- pF Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 10 11.7 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 30 33 -- % Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD -- -30 -27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL -- -12 -9.0 dB Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Gps -- 11.7 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) -- 41 -- % Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21090 MRF21090S 5-397 3 ; ; 9 9 95 ; 9 95 34A/1 /1 5 B1 C1, C13 C2, C10 C3, C9 C4, C8 C5, C12 C6 C7 6 7 9 8 9 /1 9 Z1 Z2 Z3 Z4 Z5 Z6 ; 9" 98 97 9 9 R2 ; 96 " 34A) /1 C11 C14 R1 : 3 Ferrite Bead, Fair Rite #2743019447 470 F, 50 V Electrolytic Capacitors 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 20 nF Chip Capacitors, ATC #100B203MCA500X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitor, ATC #100B100JCA500X 1 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1 nF Chip Capacitor, ATC #100B102JCA500X 8.2 pF Chip Capacitor, ATC #100B8R2CCA500X 13 , 1/4 W Chip Resistor, Garret Instrument #RM73B2B130JT, 12 , 1/4 W Chip Resistor, Garret Instrument #RM73B2B120JT 30.7 x 2.09 mm Microstrip 5.99 x 2.09 mm Microstrip 7.55 x 9.89 mm Microstrip 3.77 x 15.71 mm Microstrip 6.89 x 26.17 mm Microstrip 14.93 x 32.05 mm Microstrip Z7 Z8 Z9 Z10 Z11 WS1, WS2 10.23 x 2.09 mm Microstrip 6.03 x 2.09 mm Microstrip 23.98 x 2.09 mm Microstrip 29.82 x 1.15 mm Microstrip 17.08 x 1.15 mm Microstrip Beryllium Copper Wear Blocks 5 mils Thick Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type N Jack Connectors, 3052-1648-10, Omni Specra 4-40 Head Screws 0.125 Long 4-40 Head Screws 0.188 Long 4-40 Head Screws 0.312 Long 4-40 Head Screws 0.438 Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert Raw PCB 0.030 Glass Teflon, 2 oz Copper Clad 3 x 5 Arion RF Circuit 3 x 5 Copper Clad PCB Teflon, MRF21090, CMR Figure 1. MRF21090 Test Circuit Schematic 96 97 %* :%2 AAA4**0 3 98 95 9 9 9 9 9 : 9 / 1 / 1 ,% :%2 AAA4**0 3 9 9" 95 9 9 MRF21090 Figure 2. MRF21090 Test Circuit Component Layout MRF21090 MRF21090S 5-398 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B 7 0& 8" 6" 1+ B1 * $*%2,* * "" -! 1 * <#%&( 5" " #2 " " B" B B5" $ "" "7" " " " 43/)9@ $! 7" "" B5 " " $A)13$/1)A<131)A0:& $A)13$/1)A<131)A0:& """ "" B" B" """ B " /1 /1 3 11< "" B" " " " B6" " B" 5,0 ,0*, ' ,0*, B" 6' ,0*, B" B6" B7" "" " /1 /1 3 11< Figure 6. Intermodulation Distortion Products versus Output Power 7 """ "" 5 7 0& " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( """ 7"" B #2A 3A)A0: #2A 3A)A0: B" 7 0& 6" " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5" Figure 5. Intermodulation Distortion versus Output Power " B" #2 Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power "" 7"" B" /1 /1 3 11< B B B5" 9 3 Figure 3. Class AB Broadband Circuit Performance 7 0& " $! B5" 1+ B1 * $*%2,* * "" -! 1 * <#%&( B5 B" 7 0& """ " $! 9'%*= <#%&( 9'%*= :%0+0'> "8 $! $! B #2 8" 6" " $! 1+ B1 * $*%2,* * "" -! 1 * <#%&( 4?,* 1*0 , 7 =2 B B7 " B5" "7 "" " /1 /1 3 11< Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA E9)1A9))A 3A31A0: " B" 5" "" " B5 $ " 7 5" < 3) 1 1< 5 5 B5 $A)13$/1)A<131)A0:& 3 " A3)A449)9@AHA #2 A 3A)A0: B " 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21090 MRF21090S 5-399 6" $! " $! " $! 6" $! 7 6" 8" f MHz Zin ZOL* Zin 2110 3.03 + j3.40 0.92 + j1.67 2140 3.02 + j3.46 0.97 + j1.80 2170 2.60 + j3.50 0.90 + j1.52 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given power, voltage, IMD, bias current and frequency. # $%&'( )*+ ,- # $%&'( )*+ ,- *.&* /0*, 1*2 Figure 9. Series Equivalent Input and Output Impedance MRF21090 MRF21090S 5-400 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line " N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * W-CDMA Performance @ -45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power -- 14 Watts (Avg.) Power Gain -- 11.5 dB Efficiency -- 16% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375D-04, STYLE 1 NI-1230 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 389 2.22 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21120 5-401 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc ) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.8 -- S Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2.5 3 3.8 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 2 A) VDS(on) -- 0.38 0.5 Vdc Crss -- 2.8 -- pF 10.5 11.4 -- 30 34.5 -- -- -31 -28 IRL -- -12 -9 dB Gps -- 11.5 -- dB Gps -- 11.5 -- dB -- 34.5 -- % IMD -- -31 -- dB IRL -- -12 -- dB P1dB -- 120 -- Watts Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Gps Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) 500 mA, Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) 500 mA, Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) 500 mA, Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) 500 mA, Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2140.0 MHz, f2 = 2140.1 MHz) 500 mA, Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, dB IMD Power Output, 1 dB Compression Point (VDD = 28 Vdc, CW, IDQ = 2 500 mA, f1 = 2170.0 MHz) % dB (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MRF21120 5-402 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit Gps -- 10.5 -- dB -- 42 -- % FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) 500 mA, Drain Efficiency (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) 500 mA, Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21120 5-403 ; 95 95" ; 955 96 9 9 9 34 ) /1 3 7 98 95 7 96 6 9 8 " 57 3 9P 6 ; ; 956 95 ; 9 3 9 95 9 958 957 ; 9" B1, B2 C1, C2, C12 C3, C4, C9, C10 C5 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C27, C34, C36, C42 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C30, C39 C31, C40 C35, C44 Coax1, Coax2 Coax3, Coax4 L1, L5 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 58 ; 9" 5 55 5 9" 56 8 9 : 9 5 3 9 9P5 97 5 9 6 8 9 34 /1 /1 5" 5 5 98 5 7 /1 9 5 96 9P 9P 9 95 3 " 95 " ; 95 97 ; 35 98 95 ; ; ; : ; Ferrite Beads, Fair Rite 0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 2.0 pF Chip Capacitors, B Case, ATC 0.5 pF Chip Capacitor, B Case, ATC 0.2 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitors, B Case, ATC 91 pF Chip Capacitors, B Case, ATC 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 0.039 F Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.022 F Chip Capacitors, B Case, ATC 1.0 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 100 F, 50 V Electrolytic Capacitors, Sprague 470 F, 63 V Electrolytic Capacitors, Sprague 25 Semi Rigid Coax, 70 mil OD, 1.05 Long 50 Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH Minispring Inductors, Coilcraft 8.0 nH Minispring Inductor, Coilcraft 7.15 nH Microspring Inductors, Coilcraft 1 k, 1/4 W Fixed Metal Film Resistors, Dale 270 , 1/8 W Fixed Film Chip Resistors, Dale 1.2 k, 1/8 W Fixed Film Chip Resistors, Dale 0.150 x 0.080 Microstrip ; ; 9 Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors 9 95 9 0.320 x 0.080 Microstrip 1.050 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.135 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.300 x 0.350 Microstrip 0.150 x 0.500 Microstrip 0.075 x 0.500 Microstrip 0.330 x 0.500 Microstrip 0.100 x 0.550 Microstrip 0.175 x 0.550 Microstrip 0.045 x 0.550 Microstrip 0.190 x 0.325 Microstrip 0.080 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.565 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.470 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.03 Teflon, r = 2.55 Copper Clad, 2 oz. Cu N-Type Panel Mount, Stripline Figure 1. 2.1 - 2.2 GHz Broadband Test Circuit Schematic MRF21120 5-404 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ; 95 95 5M 8 98 9 96 5M 8 " "M " 9 9 : 35 3 95" 98 95 5M 8 95 955 97 96 95 96 5 3 9 9 95 98 97 9 9 9" 3 9 3 95 9 9 5M 8 9 9 95 956 958 " "M " 9 9" 5M 8 3 : 9 957 9" 9 95 5M 8 9 9 Figure 2. 2.1 - 2.2 GHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21120 5-405 TYPICAL CHARACTERISTICS 7"" "" 5"" "" """ 7" 7 0& 6"" $! 6" $! " "" 8 "" " " /1 /1 3 11< B" B5" B" "" " " "" /1 /1 3 11< Figure 4. Intermodulation Distortion versus Output Power " " 5 " 7 0& ? "" 1+ B1 * "" -! 1 * <#%&( 8 7 B B <3 6 B7 B5" $ "" " " " 43/)9@ $! 7" B5 "" B" B5" B" " " " B" B" 9 3 / " " / 0: 3$ B" B6" B7" B8" & & B"" " &" &" & & $! <#% $! B" 7" " #2 " " " 8 7 " 7 0& ? "" 6"" $! 6" $! B" B" 6 $ "" " B" " "" /1 /1 3 11< /1 /1 3 11< Figure 7. Power Gain, Efficiency, ACPR versus Output Power (W-CDMA) Figure 8. Power Gain, Efficiency, IMD versus Output Power MRF21120 5-406 B66 0: 6"""""" ! B8 0: 9 3 B 0: 93 / B 0: 93 B" " #2 A 3A)A0: " 9 3 ) " 0: 5 A449)9@AHA9 3A0: #2 A 3A)A0: 34 Figure 6. 2.17 GHz W-CDMA Mask at 14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch " 7 0& ? 6" 6" $! 9**, 6 ! #2 7 R1S B" Figure 5. Class AB Broadband Circuit Performance 5" - $! 2 3: : <1 $3M3 R1S B66 0: 6"""""" ! 3* . B 0: <3 7 0& 6"" $! 6" $! """ "" $A)13$/1) A449)9@AH <131)A0:& #2 A 3A)A0: 7" "" B" "" #2 7"" B" Figure 3. Power Gain versus Output Power 5 "" 5"" A449)9@AH $A)13$/1)A<131)A0:& #2 A 3A)A0: 5 $A)13$/1)A<131)A0:& B7" MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " $! 6" $! 2 ,&* = %0 6" $! 7 " $! "" " Zload f MHz Zsource 2110 3.7 - j2.0 4.9 - j2.8 2140 3.5 - j2.4 5.1 - j2.7 2170 3.1 - j2.5 5.2 - j2.5 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21120 5-407 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line ! ! ! N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power -- 20 Watts Efficiency -- 18% Gain -- 13 dB IM3 -- -43 dBc ACPR -- -45 dBc * 100% Tested under 2-carrier W-CDMA * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 125 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF21125 CASE 465C-02, STYLE 1 NI-880S MRF21125S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 330 1.89 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.53 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MRF21125 MRF21125S MRF21125SR3 5-408 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 10.8 -- S Gate Threshold Voltage (VDS = 10 V, ID = 300 A) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 1 A) VDS(on) -- 0.12 -- Vdc Crss -- 5.4 -- pF Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 17 18 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -- -43 -40 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 -5 MHz and f2 +5 MHz referenced to carrier channel power.) ACPR -- -45 -40 dBc Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9.0 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21125 MRF21125S MRF21125SR3 5-409 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 12 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 34 -- % Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -30 -- dBc Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Gps -- 11.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) -- 46 -- % TYPICAL TWO-TONE PERFORMANCE (In Motorola Test Fixture) TYPICAL CW PERFORMANCE MRF21125 MRF21125S MRF21125SR3 5-410 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA : ; 3 3 35 3 ; 9 95 ; 9 9 9 34 ) /1 5 96 97 98 9" ; 9 ; ; 9 95 9 6 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 7 8 " 9 /1 1.212 x 0.082 Microstrip 0.236 x 0.082 Microstrip 0.086 x 0.254 Microstrip 0.357 x 0.082 Microstrip 0.274 x 1.030 Microstrip 0.466 x 0.050 Microstrip 0.501 x 0.050 Microstrip 5 Z8 Z9 Z10 Z11 Z12 Z13 PCB 34 /1 /1 9 0.600 x 1.056 Microstrip 0.179 x 0.219 Microstrip 0.100 x 0.336 Microstrip 0.534 x 0.142 Microstrip 0.089 x 0.080 Microstrip 0.620 x 0.080 Microstrip Arlon GX0300-55-22, 0.030, r = 2.55 Figure 1. MRF21125 Test Circuit Schematic Table 1. MRF21125 Test Circuit Component Designations and Values Designators Description B1 Ferrite Bead (Square), Fair Rite #2743019447 C1 9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X C2, C4, C11, C12 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C3, C7 20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X C5, C14 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X C6 100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X C8 10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X C9 7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X C10 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X C13 0.1 F Chip Capacitor, Kemet #CDR33BX104AKWS C15 16 pF Chip Capacitor, B Case, ATC #100B160KP500X C16 0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL R1 1.0 k, 1/8 W Chip Resistor R2 560 k, 1/8 W Chip Resistor R3 4.7 , 1/8 W Chip Resistor R4 12 , 1/8 W Chip Resistor W1 Solid Copper Buss Wire, 16 AWG MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21125 MRF21125S MRF21125SR3 5-411 98 9" : 3 3 9 95 9 35 9 9 97 3 96 9 9 95 9 9 9 9 $34AA3*.A Figure 2. MRF21125 Test Circuit Component Layout MRF21125 MRF21125S MRF21125SR3 5-412 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B" B" 0: B" B6" B7" B8" B"" B" B9 3 O ;9 3 O 57 $! : 57 $! : B$5 O 57 $! : ;$5 O 57 $! : B" 5" " 0: 5 50: 57 5 8 5" 7" 7 7 " #2 5 " 7 " ) /1 3 11< " A3)A449)9@AHA #2 A 3A)A0: A/1 /1A 3A11< A3)A449)9@AHA #2 A 3A)A0: " B " 5" """ "" 5"" 7 0& "" 1+ B1 * $*%2,* * " $! 1 * <#%&( " " "" /1 /1 3 11< Figure 7. Intermodulation Distortion versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B B" B #2 B5" $ B5 " "7" "" " " " 43/)9@ $! 7" B" "" """ "" 5 5"" """ 7 0& ! ! 1+ B1 * $*%2,* * " $! 1 * <#%&( B " B" 3 #2 A 3A)A0: $A)13$/1)A<131)A0:& """ B Figure 6. Broadband Linearity Performance B5 B" B" 5 B" 7 " 7 /1 /1 3 11< B9$ 5 7 0& ! ! 1+ B1 * $*%2,* * " $! 1 * <#%&( B B " B B" B" 9 3 Figure 5. CW Performance B5" B Figure 4. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 6 7 B5 $5 Figure 3. 2-Carrier (10 MHz Spacing) W-CDMA Spectrum B5" B" B" 7 0& "" " $! B " 43/)9@ $! " B" 7 0& "" ! ! 9'%*= <#%&( 9'%*= :%0+0'> " $! O 57 $! : *%-L.( 7 0: O ""H , I%I=G 994 " #2 $5A0:& 9 3A0:& 57 $! 9'%*= : B5" 3A) /1A31/3)A<<A0: $A)13$/1)A<131)A0:& B" A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS " " "" /1 /1 3 11< Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 5-413 " $! " = %0 6" $! 2 ,&* " $! 6" $! 7 "" " .( B9%,,*, B9$ f MHz Zload Zsource 2110 3.81 - j6.86 1.56 - j1.58 2140 4.33 - j7.90 1.53 - j1.90 2170 4.84 - j8.46 1.48 - j2.26 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 9. Series Equivalent Input and Output Impedance MRF21125 MRF21125S MRF21125SR3 5-414 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA !" !" N-Channel Enhancement-Mode Lateral MOSFETs !" Designed for W-CDMA base station applications at frequencies from 2110 !" to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 28 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 26% IM3 -- -37 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF5S21130 CASE 465C-02, STYLE 1 NI-880S MRF5S21130S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 315 2 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C CW 92 Watts Symbol Max Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 92 W CW Case Temperature 80C, 28 W CW C/W RJC 0.54 0.56 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-415 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M4 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.5 -- S Crss -- 2.6 -- pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 24 26 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -37 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR -- -39 -37 dBc Input Return Loss (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB (1) Part is internally matched both on input and output. MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-416 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA I%2 3 ; 9 3 95 8 6 96 5 /1 7 97 5 96 " 2##=G 34 /1 /1 98 9" 9 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 ; 9" 97 ; 9 ; 9 98 9 34 ) /1 ; 95 9 9 9 0.500 x 0.083 Microstrip 0.995 x 0.083 Microstrip 0.905 x 0.083 Microstrip 0.159 x 1.024 Microstrip 0.117 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.000 Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB ; 9 ; 9 0.709 x 0.083 Microstrip 0.415 x 1.000 Microstrip 0.531 x 0.083 Microstrip 0.994 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.030, r = 2.55 Figure 1. MRF5S21130 Test Circuit Schematic Table 1. MRF5S21130 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1, C2, C13, C14, C15, C16 10 F, 35 V Tantalum Capacitors 293D1106X9035D Vishay-Sprague C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay-Vitramon C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC C20 220 F, 63 V Electrolytic Capacitor, Radial 13668221 Philips R1, R2 1 kW, 1/4 W Chip Resistors MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-417 9 98 95 3 3 9 CUT OUT AREA 96 9 9" 95 9 97 97 96 98 9 9 9 9" 9 9 9 MRF5S21130 Rev 0 Figure 2. MRF5S21130 Test Circuit Component Layout MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-418 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS 7 0& 7 .( "" B9%,,*, B9$ " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 " 3 " B7 8 B5 $5 7 6 B5 9 3 "" B" "7" "" " " " 7" B " "" B" B B" B B5" 3 ) /1A31/3)A<<A0: 5" $5A0:& 9 3A0:& #2 AA 3A)A0: 5 A3) 449)9@AH 5 #2 43/)9@ $! Figure 3. 2-Carrier W-CDMA Broadband Performance B "" "" 5 """ #2 AA 3A)A0: $5A13A33 )13$/1)A<131)A0:& "" 7"" 5 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( " "" """ B5" B5 "" B" "" "" B B" 7"" B """ B" B " Figure 4. Two-Tone Power Gain versus Output Power """ Figure 5. Third Order Intermodulation Distortion versus Output Power B 7 5,0 ,0*, B5" 6 A/1 /1A 3A0: $ )13$/1)A<131)A0:& "" /1 /1 3 11< /1 /1 3 11< B5 B" ' ,0*, B 6' ,0*, B" B B" 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( 7 0& 5" "" 1+ B1 * $*%2,* *2 9**, 4,*F*&G " $! " " 0*%= 50: 5" 0: "" 0: 0: 67 5 &%= 7 0& "" =2*0 9 2*& 2*& 9**, 4,*F*&G " $! "" " 5 56 58 5 1B1) < 9) $! ) /1 3 0: Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-419 7 0& "" 5 $! $! ? B9$ " $! O 57 $! :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 5" B5" $5 B5 #2 B" " B " B" B" B" " " 5" 5 " B6" B7" B8" B" B9 3 O ;9 3 O 57 $! : 57 $! : B$5 O 57 $! : B" B B" B"" B" 57 $! 9'%*= : B5" B 9 3 " B" B" 0: 5 $5A0:& 9 3A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS B B " " " Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power "8 $1:4A4913A/3<A?A$ <AAA "" " 3::1@AH B" 43/)9@ $! /1 /1 3 11< B9$ " "" """ """" B ;$5 O 57 $! : " 7 " MB1B3 0: Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal "7 "6 " "" " " " 7" "" " 1E E/)91) 1$ 31/3 9 1'2 %I .* (,%#' 02#=%G2 &%=&=%*0 $1:4 ' ,2 ? % #*,* 0,% &,,* * *22 % *=*.%*0 * #*,%,*2 '%.* & ,,*=%*0 I**, '% "H '* '* ,*&%= #,*0& , *%= %=,* .0* $1:4 %& , IG , $1:4 % #%,&=%, %##=&% Figure 11. MTBF Factor versus Junction Temperature MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-420 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "" $! "7" $! = %0 "7" $! "" $! 2 ,&* 7 0& "" 7 .( f MHz Zsource Zload 2080 2.87 - j9.49 1.51 - j2.97 2110 3.13 - j9.86 1.52 - j2.54 2140 4.05 - j10.90 1.59 - j2.68 2170 4.80 - j11.75 1.62 - j2.70 2200 5.55 - j11.87 1.54 - j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 12. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5-421 SEMICONDUCTOR TECHNICAL DATA !!" !!" N-Channel Enhancement-Mode Lateral MOSFETs !!" Designed for W-CDMA base station applications with frequencies from 2110 !!" to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 33 Watts Avg. Power Gain -- 12.5 dB Efficiency -- 25% IM3 -- -37 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 33 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF5S21150 CASE 465C-02, STYLE 1 NI-880S MRF5S21150S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 367 2.1 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C CW 125 Watts Symbol Max Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 125 W CW Case Temperature 80C, 33 W CW C/W RJC 0.47 0.53 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-422 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 Adc) VGS(th) 2.5 -- 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1300 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) -- 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) gfs -- 9 -- S Crss -- 3.2 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 11 12.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 23 25 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -37 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR -- -39 -37 dBc Input Return Loss (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-423 3 I%2 ; 9 9" 9 3 5 " 8 5 7 9 95 98 96 9 ; 9 ; 9" 2##=G 98 9 34 ) /1 ; 9 6 34 /1 /1 97 6 95 /1 97 9 96 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 0.500 x 0.083 Microstrip 0.505 x 0.083 Microstrip 0.536 x 0.083 Microstrip 0.776 x 0.083 Microstrip 0.119 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.024 Microstrip 0.117 x 1.100 Microstrip Z10, Z11 Z12 Z13 Z14 Z15, Z16 Z17 PCB ; 9 ; 9 0.709 x 0.083 Microstrip 0.415 x 1.100 Microstrip 0.874 x 0.083 Microstrip 1.182 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.030, r = 2.55 Figure 1. MRF5S21150 Test Circuit Schematic Table 1. MRF5S21150 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 22 F, 35 V Tantalum Capacitor TAJE226M035R AVX C2, C6, C8, C9, C13, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C3,C4 1.8 pF 100B Chip Capacitors 100B1R8BW ATC C5, C7, C10, C14 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay-Vitramon C11, C12, C15, C16 10 F, 35 V Tantalum Capacitors 293D1106X9035D Vishay-Sprague C17 0.3 pF Chip Capacitor 100B0R3BW ATC C20 470 F, 63 V Electrolytic Capacitor, Radial 13661471 Philips R1, R2 10 kW, 1/4 W Chip Resistors MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-424 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 9" 9 98 9 3 3 9" 9 9 9 9 9 CUT OUT AREA 98 95 97 96 96 95 9 9 9 97 MRF5S21150 Rev 0 Figure 2. MRF5S21150 Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-425 TYPICAL CHARACTERISTICS 5 " 3 8 7 0& 55 .( 5"" B9%,,*, B9$ " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 7 6 " B7 B5 B5 $5 9 3 "" B" "7" "" " " " 7" B " "" B" B B" B B5" 3 ) /1A31/3)A<<A0: 5" $5A0:& 9 3A0:& #2 AA 3A)A0: A3) 449)9@AH 5 #2 43/)9@ $! Figure 3. 2-Carrier W-CDMA Broadband Performance B "" 5 5"" """ " $5A13A33 )13$/1)A<131)A0:& #2 AA 3A)A0: 8"" 6"" 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( " "" B5" 6"" B" "" 5"" B B" """ B 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( B" B """ 8"" B5 " Figure 4. Two-Tone Power Gain versus Output Power B 7 B5 B" ' ,0*, B 6' ,0*, B" B B" " 0*%= 6 5,0 ,0*, B5" 7 0& " 5"" 1+ B1 * $*%2,* *2 9**, 4,*F*&G " $! " """ Figure 5. Third Order Intermodulation Distortion versus Output Power A/1 /1A 3A0: $ )13$/1)A<131)A0:& "" /1 /1 3 11< /1 /1 3 11< 50: 57 0: 7 0: 8 0: 86 &%= 5 7 0& 5"" =2*0 9 2*& 2*& 9**, 4,*F*&G " $! " 8 "" 7 5 5 56 57 58 " 5 1B1) < 9) $! ) /1 3 0: Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-426 6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " $5 9 3 B" #2 " B B" B" B" B8" B" B9 3 O ;9 3 O 57 $! : 57 $! : B$5 O 57 $! : B" B B" B"" B "" " B6" B7" B" " B5 57 $! 9'%*= : B5" B5" B" B 7 0& 5"" 5 $! $! ? B9$ " $! O 57 $! :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 0: 5" $5A0:& 9 3A0:& A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS B B" " " Figure 9. 2-Carrier W-CDMA Spectrum "8 $1:4A4913A/3<A?A$ <AAA "" " 3::1@AH " 43/)9@ $! /1 /1 3 11< B9$ Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power " "" """ """" B ;$5 O 57 $! : " 7 " "7 "6 " "" " " " 7" "" " 1E E/)91) 1$ 31/3 9 MB1B3 0: Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal 1'2 %I .* (,%#' 02#=%G2 &%=&=%*0 $1:4 ' ,2 ? % #*,* 0,% &,,* * *22 % *=*.%*0 * #*,%,*2 '%.* & ,,*=%*0 I**, '% "H '* '* ,*&%= #,*0& , *%= %=,* .0* $1:4 %& , IG , $1:4 % #%,&=%, %##=&% Figure 11. MTBF Factor versus Junction Temperature MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-427 "" $! = %0 "7" $! "7" $! 2 ,&* "" $! 7 0& 5"" 55 .( f MHz Zsource Zload 2080 3.05 - j9.66 1.02 - j2.94 2110 3.97 - j10.31 1.09 - j2.51 2140 4.70 - j11.03 1.16 - j2.46 2170 5.45 - j12.41 1.16 - j2.58 2200 6.18 - j13.04 1.02 - j2.55 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 12. Series Equivalent Input and Output Impedance MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 5-428 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line !" N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 38 Watts Avg. Power Gain -- 14 dB Efficiency -- 25.5% IM3 -- 37.5 dBc ACPR -- -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation 2170 MHz, 38 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375D-04, STYLE 1 NI-1230 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 437.5 2.5 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 180 W CW Case Temperature 80C, 38 W CW C/W RJC 0.40 0.40 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5P21180 5-429 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 800 mAdc) VGS(Q) -- 3.6 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 5 -- S Crss -- 1.7 -- pF Characteristic OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12.5 14 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 23 25.5 -- % IM3 -- -37.5 -35 dBc ACPR -- -41 -38 dBc IRL -- -14 -9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push-pull configuration. MRF5P21180 5-430 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 3 3 ; 95 95 9 9 5 6 5 34 ) /1 8 7 35 ; 9" 34 /1 /1 7 " 95 3 3 ; 98 " 9 ; 97 8 /1 Z1, Z22 Z2, Z21 Z3, Z20 Z4, Z19 Z5, Z6 Z7, Z8 9 9 6 9 ; 98 97 ; 9 9 9 9 96 1.000 x 0.066 Microstrip 0.760 x 0.113 Microstrip 0.068 x 0.066 Microstrip 1.672 x 0.066 Microstrip 0.318 x 0.066 Microstrip 0.284 x 0.180 Microstrip Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 PCB ; 9" 9 ; 96 ; 9 ; 9 0.256 x 0.650 Microstrip 1.030 x 0.035 Microstrip 0.500 x 0.650 Microstrip 0.550 x 0.058 Microstrip 0.353 x 0.066 Microstrip Taconic RF-35, 0.030, r = 3.5 Figure 1. MRF5P21180 Test Circuit Schematic Table 1. MRF5P21180 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1, C2, C3, C4 30 pF Chip Capacitors 100B300JCA500X ATC C5, C6, C7, C8 5.6 pF Chip Capacitors 100B5R6JCA500X ATC C9, C10 10 F Tantalum Capacitors T495X106K035AS4394 Kemet C11, C12 1000 pF Chip Capacitors 100B102JCA500X ATC C13, C14, C15, C16 0.1 F Chip Capacitors CDR33BX104AKWS Kemet C17, C18, C19, C20, C21, C22 22 F Tantalum Capacitors T491X226K035AS4394 Kemet C23, C24 1.0 F Tantalum Capacitors T491C105M050 Kemet R1, R2, R3, R4 10 W, 1/8 W Chip Resistors R5 1.0 kW, 1/8 W Chip Resistor WB1, WB2, WB3, WB4 Wear Blocks 5 x 180 x 500 mil Brass Shim Motorola MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5P21180 5-431 95 3 95 9 3 9 97 98 9 97 98 9" 9 : : CUT OUT AREA 9 :5 : 9 95 9 96 3 3 9 35 9 9 9" 9 9 96 9 MRF5P21180 Rev 5 Figure 2. MRF5P21180 Test Circuit Component Layout MRF5P21180 5-432 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS #2 5 5 5" 7 0& 57 .( "" B9%,,*, B9$ " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 3 " 8 7 "7" B" B B5 9 3 " B5" $5 6 "" B" " " " B "" 7" B" B B" B B5" B5 3 ) /1A31/3)A<<A0: A3) 449)9@AH " $5A0:& 9 3A0:& #2 AA 3A)A0: 43/)9@ $! Figure 3. 2-Carrier W-CDMA Broadband Performance B" """ "" "" 5 7"" 5 $5A13A33 #2 AA 3A)A0: "" 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( " " " 7" "" 5"" "" )13$/1)A<131)A0:& 7 0& 5 $! $! 1+ B1 * $*%2,* * " $! 1 * <#%&( B B5" 7"" "" B5 """ B" "" B B" "" " " B" 7 B 5,0 ,0*, B5 B" ' ,0*, B 6' ,0*, B" 7 0& 6" "" 1+ B1 * $*%2,* *2 9**, 4,*F*&G " $! B B" " 7" "" 5"" "" Figure 5. Third Order Intermodulation Distortion versus Output Power A/1 /1A 3A0: $ )13$/1)A<131)A0:& Figure 4. Two-Tone Power Gain versus Output Power B5" " /1 /1 3 11< /1 /1 3 11< " 0*%= 50: 56 0: 5 0: 88 0: 88 " 7 7 0& "" =2*0 9 2*& 2*& 9**, 4,*F*&G " $! " 5" &%= 5" 5 5 5 57 " 1B1) < 9) $! ) /1 3 0: Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5P21180 5-433 7 0& "" 5 $! $! ? B9$ " $! O 57 $! :%0+0' *%-L.( 7 0: O ""H , I%I=G 994 5" B" B5" B5" " B5 #2 $5 " B" 7 " 5" " B" B" B6" B7" B8" B" B" B9 3 O ;9 3 O 57 $! : 57 $! : B$5 O 57 $! : B B" B B" B 9 3 57 $! 9'%*= : B" B " B" 0: 5 B $5A0:&A9 3A0:& A3)A449)9@AHA #2 A 3A)A0: " B"" B " " " Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power "" $1:4A4913A/3<A?A$ <AAA "" " 3::1@AH B" 43/)9@ $! /1 /1 3 11< B9$ " "" """ """" B ;$5 O 57 $! : " 7 " MB1B3 0: Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal "8 "7 "6 "" " " " 7" "" " 1E E/)91) 1$ 31/3 9 1'2 %I .* (,%#' 02#=%G2 &%=&=%*0 $1:4 ' ,2 ? % #*,* 0,% &,,* * *22 % *=*.%*0 * #*,%,*2 '%.* & ,,*=%*0 I**, '% "H '* '* ,*&%= #,*0& , *%= %=,* .0* $1:4 %& , IG , $1:4 % #%,&=%, %##=&% Figure 11. MTBF Factor versus Junction Temperature MRF5P21180 5-434 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA = %0 " $! 6" $! " $! 6" $! 2 ,&* 7 ? 7"" 57 .( f MHz Zload Zsource 2110 5.39 - j13.89 3.69 - j10.51 2140 5.66 - j13.99 3.81 - j10.66 2170 5.53 - j14.51 3.79 - j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 12. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF5P21180 5-435 SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line " " N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 38 Watts (Avg.) Power Gain -- 12.1 dB Efficiency -- 22% IM3 -- 37.5 dBc ACPR -- -41 dBc * Internally Input and Output Matched, for Ease of Use * High Gain, High Efficiency, and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2170 MHz, 170 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 375D-04, STYLE 1 NI-1230 MRF21180 CASE 375E-03, STYLE 1 NI-1230S MRF21180S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 380 2.17 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.46 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF21180 MRF21180S 5-436 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.18 0.22 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6 -- S Crss -- 3.6 -- pF Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 11 12.1 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 19 22 -- % IM3 -- -37.5 -35 dBc ACPR -- -41 -39 dBc IRL -- -12 -9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push-pull configuration. (continued) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21180 MRF21180S 5-437 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 12 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 33 -- % Two-Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -30 -- dBc Two-Tone Input Return Loss (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -- -12 -- dB P1dB -- 180 -- W Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz) (2) Measurements made with device in push-pull configuration. MRF21180 MRF21180S 5-438 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 35 3 ; : 5 ; 95 34 ) /1 9 5 9 9 9 8 9 97 98 9 6 /1 8 " 7 " 3 3 9 9 34 /1 /1 98 ; 6 3 97 ; : 95 7 ; 9 9 9 9 ; 96 9" 95 96 ; ; 9" 9 Figure 1. MRF21180 Test Circuit Schematic Table 1. MRF21180 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1, B2 Short Ferrite Beads 2743019447 Fair Rite C1, C2, C3, C4 30 pF Chip Capacitors 100B300JCA500X ATC C5, C6, C7, C8 5.6 pF Chip Capacitors 100B5R6JCA500X ATC C9, C10 10 F Tantalum Capacitors T495X106K035AS4394 Kemet C11, C12, C13, C14 1000 pF Chip Capacitors 100B102JCA500X ATC C15, C16, C17, C18 0.1 F Chip Capacitors CDR33BX104AKWS Kemet C19, C20 1.0 F Tantalum Capacitors T491C105M050 Kemet C21, C22, C23, C24 22 F Tantalum Capacitors T491X226K035AS4394 Kemet N1, N2 Type N Flange Mounts 3052-1648-10 Omni Spectra R1, R2, R3, R4 10 , 1/8 W Chip Resistors R5 1.0 k, 1/8 W Chip Resistor Z1, Z20 Microstrip 0.790 x 0.065 Z2, Z19 Microstrip 0.830 x 0.112 Z3, Z18 Microstrip 0.145 x 0.065 Z4, Z17 Microstrip 1.700 x 0.065 Z5, Z6 Microstrip 0.340 x 0.065 Z7, Z8 Microstrip 0.455 x 0.600 Z9, Z10 Microstrip 0.980 x 0.035 Z11, Z12 Microstrip 0.510 x 0.645 Z13, Z14 Microstrip 0.770 x 0.058 Z15, Z16 Microstrip 0.280 x 0.065 WB1, WB2, WB3, WB4 Wear Blocks Board 0.030 Glass Teflon RF-35, r = 3.50 Taconic PCB Etched Circuit Boards MRF21180 Rev. 4 CMR MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21180 MRF21180S 5-439 98 9 9 99 3 : 97 35 9 9 9 97 9" : 9 9 :5 3 95 : : 95 9 : 3 9" 96 98 3 96 9 9 95 MRF21180 Rev. 4 9 Figure 2. MRF21180 Test Circuit Component Layout MRF21180 MRF21180S 5-440 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA B #2 " B" $5 " B 9 3 " " B" A3)A449)9@AHA #2 A 3A)A0: $ )13$/1)A<131)A0:& 5"" "" "" 7 0& 5 $! $! 8"" 6"" B" " " "" B 5,0 ,0*, B" " ' ,0*, B B" 7 0& 6"" 5 $! $! 6' ,0*, B " " " "" 3 " B8 B 7 B58 #2 9 3 " "8" " 5" " 6" Figure 6. 2-Carrier W-CDMA Broadband Performance 57 " 7 0& 6"" " $! " "" 7 " " B 8" B 56 " 5 B8 B5 Figure 5. Intermodulation Distortion versus Output Power #2 B $5 7 B8 7 0& 57 .( 6"" B $! ; $! B9%,,*, B9$ " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' %&' 9%,,*, *%-L.( 75 0: O ""H , I%I=G 994 43/)9@ $! #2 AA 3A)A0: 5" /1 /1 3 11< B" Figure 4. Intermodulation Distortion Products versus Output Power B 8 5 Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power B5 " B5 /1 /1 3 11< B5" " /1 /1 3 11< .( B9$ B B" B5" B $ 5 B6 5 B7 5 B8 55 B5" 6" 6"" 5 $! $! 5 5 B5 6 7 8 /1 /1 3 11< 3) </ @ Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA WIRELESS RF PRODUCT DEVICE DATA A3)A449)9@AH B" $5A0:& 9 3A0:& 3 ) /1A31/3)A<<A0: " B5 $5A0:& 9 3A0:& B B5 $ )13$/1)A<131)A0:& B5" 7 0& 6"" 5 $! $! 57 $! 9'%*= :%0+0' *%-L.( 75 0: O ""H , I%I=G 994 $ )13$/1)A<131)A0:& 5" A3)A449)9@AH A3)A449)9@AH A3)A449)9@AHA #2 A 3A)A0: TYPICAL CHARACTERISTICS MRF21180 MRF21180S 5-441 TYPICAL CHARACTERISTICS #2 AA 3A)A0: "" 8"" 6"" "" 6 5"" 7 0& 5 $! $! "" " " /1 /1 3 11< #2 AA 3A)A0:A3)A449)9@AH 5 5" " B7 B5 3 B7 7 0& 6" 9 6"" B $! ; $! B5 B7 $ #2 " "8" " 5" " B55 8" 6" 3 ) /1A31/3)A<<A0: $ )13$/1)A<131)A0:& Figure 9. Two-Tone Power Gain versus Output Power 43/)9@ $! B " B5" 5,0 ,0*, B" B5 B" 7 0& 6" 6"" " $! B DL " $! ; DL B ' ,0*, B5" 57 $! : B9 3 O 57 $! : ;9 3 O 57 $! : B$5 O 57 $! : ;$5 O 57 $! : B" B" 6' ,0*, B" B B" 57 $! : 0: $ )13$/1)A<131)A0:& Figure 10. Two-Tone Broadband Performance B" " " " B6" B" B B" B " " D 1) < 31) $! 43/)9@ $! Figure 11. Intermodulation Distortion Products versus Two-Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MRF21180 MRF21180S 5-442 " MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6" $! 2 ,&* " $! 6" $! " $! = %0 7 0& P 7" 57 .( f MHz Zsource Zload 2110 2.45 + j2.08 2.65 + j1.52 2140 2.39 + j2.51 2.71 + j1.80 2170 2.16 + j3.14 2.64 + j2.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- ; *.&* /0*, 1*2 B B # $%&'( )*+ ,- ; Figure 13. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF21180 MRF21180S 5-443 SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. '!""# The RF GaAs Line '() * 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. * Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power -- 450 mWatts Power Gain -- 9 dB Efficiency -- 24% * 3 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466-02, STYLE 1 PLD-1.5 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit VDSS 8 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 22.7(2) 0.15(2) Watts W/C Gate-Source Voltage VGS -5 Vdc Drain-Source Voltage RF Input Power Pin 24 dBm Storage Temperature Range Tstg - 65 to +150 C Channel Temperature(1) Tch 175 C Operating Case Temperature Range TC - 40 to +85 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 6.6(2) C/W MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating MSL1 (1) For reliable operation, the operating channel temperature should not exceed 150C. (2) Simulated. REV 0 MRFG35003M6T1 5-444 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS -- 2.9 -- Adc Off State Leakage Current (VGS = -0.4 Vdc, VDS = 0 Vdc) IGSS -- < 1.0 100 Adc Off State Drain Current (VDS = 6 Vdc, VGS = -1.9 Vdc) IDSO -- 0.02 1.0 mAdc Off State Current (VDS = 20 Vdc, VGS = -2.5 Vdc) IDSX -- 1.0 15 mAdc Gate-Source Cut-off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) -1.2 -1.0 -0.7 Vdc Quiescent Gate Voltage (VDS = 6 Vdc, IDQ = 180 mA) VGS(Q) -1.1 -0.9 -0.7 Vdc Power Gain (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) Gps 8 9 -- dB Output Power, 1 dB Compression Point (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) P1dB -- 3 -- W hD 22 24 -- % ACPR -- -42 -38 dBc Drain Efficiency (VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz. Tune for Maximum Pout) Adjacent Channel Power Ratio (VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35003M6T1 5-445 < " 9 9" 98 97 96 9 9 9 96 97 98 9" 9 9 3 95 9 9 9 34 ) /1 " 9 5 9 6 95 7 8 95 5 9 34 /1 /1 9 97 Z1, Z14 Z2 Z3 Z4 Z5, Z10 Z6 Z7 96 0.044 x 0.125 Microstrip 0.440 x 0.105 Microstrip 0.340 x 0.357 Microstrip 0.380 x 0.426 Microstrip 0.527 x 0.015 Microstrip 0.027 x 0.347 Microstrip 0.538 x 0.115 Microstrip 9 Z8 Z9 Z11 Z12 Z13 PCB 9 0.439 x 0.136 Microstrip 0.062 x 0.280 Microstrip 0.349 x 0.302 Microstrip 0.055 x 0.130 Microstrip 0.044 x 0.502 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 1. 3.5 GHz Test Circuit Schematic Table 1. 3.5 GHz Test Circuit Component Designations and Values Designation Description C1 12 pF Chip Capacitor, B Case, ATC C2 0.1 pF Chip Capacitor (0805), AVX C3, C4, C14, C15 3.9 pF Chip Capacitors (0805), AVX C5, C16 10 pF Chip Capacitors, A Case, ATC C6, C17 100 pF Chip Capacitors, A Case, ATC C7, C18 100 pF Chip Capacitors, B Case, ATC C8, C19 1000 pF Chip Capacitors, B Case, ATC C9, C20 3.9 F Chip Capacitors, B Case, ATC C10, C21 0.1 F Chip Capacitors, B Case, ATC C11, C22 22 F, 35 V Tantalum Surface Mount Capacitor, Newark C12, C13, C26, C27 0.3 pF Chip Capacitors (0805), AVX C23, C25, C28 1.0 pF Chip Capacitors (0805), AVX C24 7.5 pF Chip Capacitor, B Case, ATC R1 50 W Chip Resistor, Newark MRFG35003M6T1 5-446 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 96 97 + 9 + 9 9" 98 97 9 96 3 95 98 9 9 9 9 9 9 9 95 95 9 9 9" 9 97 96 9 9 MRFG35003M6 3*.A Figure 2. 3.5 GHz Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35003M6T1 5-447 TYPICAL CHARACTERISTICS " 3 B" B" B" B" < 0& 7" 5 ! 7 L 5 B9$ < "787eB57_ "775eB56"_ B5" B5" B" B" 9 3 B" B" 9 3A0:& 3 ) /1A31/3)A<<A0: " B" " B" /1 /1 3 11< " 5 1 A13)</93A)A0: 5" " 1 " " 8 8 7 7 " < 0& 7" 5 ! 7 L 5 B9$ < "787eB57_ "775eB56"_ " PAEAA 3AA449)9@AH Figure 3. W-CDMA ACPR and Input Return Loss versus Output Power " /1 /1 3 11< Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35003M6T1 5-448 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 2. Class AB Common Source S-Parameters at VDS = 6 Vdc, IDQ = 180 mA S11 S21 S12 S22 f GHz |S11| |S21| |S12| |S22| 0.5 0.954 -176.79 3.859 84.89 0.016 9.07 0.847 178.96 0.55 0.953 -177.98 3.527 83.61 0.016 8.90 0.846 178.38 0.6 0.952 -179.13 3.250 82.29 0.016 8.49 0.846 177.74 0.65 0.952 179.80 3.019 80.95 0.016 8.44 0.845 177.07 0.7 0.952 178.89 2.818 79.74 0.016 8.51 0.844 176.28 0.75 0.951 177.96 2.643 78.49 0.016 8.53 0.844 175.55 0.8 0.952 177.03 2.491 77.11 0.017 8.75 0.843 174.77 0.85 0.952 176.22 2.354 75.85 0.017 8.61 0.842 173.93 0.9 0.951 175.46 2.234 74.67 0.017 8.62 0.842 173.12 0.95 0.951 174.66 2.124 73.38 0.017 8.56 0.841 172.27 1 0.952 173.92 2.025 72.17 0.017 8.48 0.841 171.37 1.05 0.951 173.18 1.934 70.97 0.017 8.47 0.841 170.50 1.1 0.951 172.40 1.851 69.68 0.017 8.93 0.841 169.75 1.15 0.951 171.63 1.774 68.46 0.017 8.90 0.840 168.89 1.2 0.951 170.90 1.704 67.25 0.018 8.79 0.841 168.10 1.25 0.950 170.06 1.638 65.98 0.018 8.80 0.841 167.34 1.3 0.951 169.23 1.576 64.74 0.018 8.44 0.840 166.61 1.35 0.946 168.58 1.518 63.62 0.018 8.76 0.838 166.13 1.4 0.952 167.47 1.463 62.45 0.018 9.00 0.845 165.24 1.45 0.949 166.77 1.411 61.29 0.018 8.57 0.841 164.98 1.5 0.949 163.72 1.360 60.14 0.018 8.15 0.842 166.78 1.55 0.948 162.94 1.317 59.12 0.018 8.28 0.843 166.27 1.6 0.947 162.21 1.276 58.03 0.018 8.51 0.843 165.71 1.65 0.950 161.60 1.237 56.92 0.018 8.31 0.843 165.16 1.7 0.951 160.97 1.201 55.93 0.018 8.40 0.844 164.60 1.75 0.950 160.44 1.167 54.89 0.018 8.35 0.844 164.10 1.8 0.950 159.95 1.135 53.83 0.019 8.44 0.844 163.47 1.85 0.952 159.46 1.105 52.85 0.019 8.61 0.843 162.87 1.9 0.951 159.01 1.076 51.92 0.019 8.34 0.844 162.37 1.95 0.950 158.58 1.049 50.84 0.019 7.93 0.843 161.77 2 0.952 158.25 1.024 49.95 0.019 8.02 0.843 161.24 2.05 0.951 157.84 1.000 49.06 0.019 7.86 0.844 160.75 2.1 0.951 157.48 0.979 48.17 0.019 7.67 0.845 160.26 2.15 0.952 157.17 0.959 47.22 0.019 7.24 0.843 159.69 2.2 0.952 156.89 0.939 46.34 0.020 6.89 0.843 159.08 2.25 0.952 156.63 0.921 45.44 0.020 6.73 0.844 158.58 2.3 0.952 156.35 0.904 44.48 0.020 6.86 0.843 158.07 2.35 0.953 155.98 0.888 43.57 0.020 6.83 0.842 157.42 2.4 0.951 155.66 0.873 42.68 0.020 6.80 0.842 156.97 2.45 0.952 155.28 0.860 41.72 0.020 6.74 0.842 156.47 2.5 0.952 154.86 0.848 40.82 0.020 6.73 0.840 155.83 2.55 0.950 154.44 0.836 39.90 0.021 6.72 0.841 155.29 2.6 0.949 153.93 0.826 38.89 0.021 6.86 0.840 154.74 2.65 0.950 153.36 0.815 37.85 0.021 6.74 0.838 154.18 2.7 0.949 152.82 0.806 36.81 0.022 6.24 0.838 153.62 2.75 0.946 152.08 0.797 35.75 0.022 5.69 0.839 153.16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35003M6T1 5-449 Table 2. Class AB Common Source S-Parameters at VDS = 6 Vdc, IDQ = 180 mA (continued) S11 S21 S12 S22 f GHz |S11| |S21| |S12| |S22| 2.8 0.946 151.55 0.787 34.63 0.022 4.64 0.836 152.55 2.85 0.946 150.81 0.778 33.54 0.023 3.61 0.836 152.02 2.9 0.945 150.11 0.770 32.46 0.023 2.16 0.837 151.54 2.95 0.945 149.30 0.762 31.37 0.023 1.54 0.835 150.98 3 0.945 148.44 0.754 30.25 0.023 1.03 0.835 150.40 3.05 0.944 147.58 0.747 29.09 0.023 0.48 0.837 149.89 3.1 0.943 146.55 0.739 27.89 0.023 0.15 0.835 149.35 3.15 0.943 145.54 0.732 26.69 0.023 -0.33 0.834 148.72 3.2 0.944 144.52 0.725 25.53 0.023 -0.41 0.836 148.13 3.25 0.941 143.47 0.718 24.33 0.023 -0.52 0.835 147.62 3.3 0.941 142.43 0.711 23.09 0.023 -1.22 0.834 147.01 3.35 0.941 141.33 0.704 21.89 0.023 -1.40 0.834 146.44 3.4 0.940 140.22 0.697 20.67 0.024 -1.31 0.834 145.89 3.45 0.939 139.25 0.689 19.44 0.024 -1.58 0.832 145.40 144.66 3.5 0.940 138.09 0.682 18.26 0.024 -1.85 0.833 3.55 0.940 137.05 0.675 17.08 0.024 -2.29 0.834 144.11 3.6 0.939 136.07 0.668 15.88 0.025 -2.75 0.832 143.59 3.65 0.941 135.06 0.661 14.68 0.025 -3.55 0.831 142.91 3.7 0.939 134.20 0.653 13.50 0.025 -4.69 0.832 142.34 3.75 0.939 133.35 0.646 12.39 0.025 -5.45 0.831 141.92 3.8 0.939 132.47 0.639 11.29 0.025 -6.34 0.830 141.27 3.85 0.940 131.67 0.632 10.20 0.025 -6.85 0.831 140.64 3.9 0.939 130.89 0.625 9.15 0.025 -6.90 0.831 140.02 3.95 0.940 130.26 0.619 8.10 0.025 -6.60 0.830 139.40 4 0.941 129.57 0.613 7.10 0.025 -6.63 0.830 138.76 4.05 0.941 128.98 0.608 6.11 0.026 -6.67 0.831 138.17 4.1 0.942 128.44 0.602 5.10 0.026 -7.00 0.830 137.56 4.15 0.942 128.03 0.598 4.14 0.026 -7.30 0.828 136.87 4.2 0.941 127.57 0.593 3.17 0.027 -7.73 0.828 136.20 4.25 0.940 127.14 0.589 2.15 0.027 -8.12 0.827 135.56 4.3 0.941 126.75 0.585 1.21 0.027 -8.11 0.826 134.85 4.35 0.941 126.39 0.581 0.25 0.027 -8.33 0.826 134.13 4.4 0.939 125.97 0.578 -0.74 0.028 -8.73 0.825 133.44 4.45 0.939 125.64 0.575 -1.67 0.028 -8.92 0.823 132.68 4.5 0.939 125.36 0.573 -2.59 0.029 -9.42 0.823 131.92 4.55 0.938 124.98 0.571 -3.50 0.029 -9.66 0.823 131.23 4.6 0.938 124.55 0.570 -4.53 0.030 -10.28 0.822 130.45 4.65 0.938 124.20 0.571 -5.52 0.030 -10.87 0.821 129.60 4.7 0.937 123.76 0.570 -6.60 0.031 -11.91 0.821 128.79 4.75 0.935 123.17 0.569 -7.76 0.031 -13.22 0.819 127.98 4.8 0.935 122.58 0.569 -8.89 0.031 -14.16 0.817 127.09 4.85 0.934 121.93 0.570 -9.98 0.031 -14.45 0.817 126.23 4.9 0.932 121.14 0.570 -11.17 0.032 -14.82 0.816 125.41 4.95 0.932 120.43 0.571 -12.37 0.032 -14.82 0.815 124.46 5 0.929 119.55 0.573 -13.61 0.032 -14.83 0.815 123.55 MRFG35003M6T1 5-450 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line '!"" '() * RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT * Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 1 Watt Power Gain -- 10 dB Efficiency -- 30% * 10 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity CASE 360D-02, STYLE 1 NI-360HF MAXIMUM RATINGS Rating Symbol Value Unit VDSS 15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 28.3 0.19 Watts W/C Gate-Source Voltage VGS -5 Vdc RF Input Power Pin 33 dBm Storage Temperature Range Tstg - 65 to +175 C Tch 175 C TC - 45 to +90 C Symbol Max Unit RJC 5.3 4.8 C/W Drain-Source Voltage Channel Temperature(1) Operating Case Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Class A Class AB (1) For reliable operation, the operating channel temperature should not exceed 150C. REV 4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010 5-451 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS -- 2.9 -- Adc Off State Leakage Current (VGS = -0.4 Vdc, VDS = 0 Vdc) IGSS -- < 1.0 100 Adc Off State Drain Current (VDS = 12 Vdc, VGS = -1.9 Vdc) IDSO -- 0.09 1.0 mAdc Off State Current (VDS = 28.5 Vdc, VGS = -2.5 Vdc) IDSX -- 5.0 15 mAdc Gate-Source Cut-off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) -1.2 -0.8 -0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, ID = 180 mA) VGS(Q) -1.0 -0.8 -0.5 Vdc Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Gps 9.0 10 -- dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) P1dB -- 10 -- W hD 23 30 -- % ACPR -- -42 -40 dBc Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 1.0 W Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 1.0 W Avg., IDQ = 180 mA, f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) MRFG35010 5-452 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 36 3 9 7 9 95 9 9 97 3 )9 9 35 5 / 98 9" 38 6 96 98 3 3 96 9" 3 97 9 9 95 9 9 37 34 ) /1 9 34 /1 /1 9 1 1 C1, C21 C2, C20 C3, C19 C4, C18 C5, C10, C16, C17 C6, C11, C12, C15 C7, C14 C8, C13 C9 D1 R1 6.8 pF Chip Capacitors, A Case, ATC 10 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.1 F Chip Capacitors, B Case, ATC 39K Chip Capacitors, B Case, ATC 22 F Tantalum Chip Capacitors 6.8 F Tantalum Chip Capacitor 5.1 V Zener Diode, MA8051CT-ND 22.1 k, 1/4 W 1%, Chip Resistor 15 1 R2 R3 R4 R5 R6 R7 R8, R9 U1 Q1 PCB 5K Trim Pot, #3224W-1-502E 12 k, 1/4 W 1%, Chip Resistor 100 k, 1/4 W 1%, Chip Resistor 39 k, 1/4 W 1%, Chip Resistor 10 , 1/4 W 1%, Chip Resistor 2.2 k, 1/4 W 1%, Chip Resistor 50 , 1/4 W 1%, Chip Resistors Voltage Converter, LTC 1261 Switch, MTP23P06V Rogers RO4350, 0.020, r = 3.50 Figure 1. 3.4 - 3.6 GHz Single Supply Bias Sequencing Test Circuit Schematic MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010 5-453 36 9 3 35 3 3 97 9" 3 / 9 < 38 96 97 9 9 9 3 98 96 95 9 9 9 98 ) 95 9" 9 37 ) /1 9 CUT OUT AREA 9 /1 /1 MRFG35010 3*.B" Figure 2. 3.4 - 3.6 GHz Test Circuit Component Layout MRFG35010 5-454 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS 5 7" < 0& 7" 5 ! 7 0: L 5 B9$ < "76eB_ "687eB5"_ 6" " " #2 " 5" " " " 8 A3)A449)9@AH #2 AA 3A)A0: 5 " " " " /1 /1 3 11< Figure 3. Power Gain and Drain Efficiency versus Output Power " 3 9 3A0:& B" B" B" B" B5" B5" B" B" 9 3 B" B" < 0& 7" 5 ! 7 0: L 5 B9$ < "76eB_ "687eB5"_ B" B6" " B" 3 ) /1A31/3)A<<A0: " B6" " /1 /1 3 11< Figure 4. W-CDMA ACPR and Input Return Loss versus Output Power " < 0& 7" 5 ! 7 0: L 5 B9$ < "76eB_ "687eB5"_ A/1 /1A 3A0: 5 5 5" 7 5" A3)A449)9@AH 5 " " " " ) /1 3 0: Figure 5. W-CDMA Output Power and Drain Efficiency versus Input Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010 5-455 5"" $! = %0 5"" $! 2 ,&* 5"" $! 5"" $! 7" Zload f MHz Zsource 3500 4.3 - j16.3 5.7 - j7.0 3550 4.2 - j16.0 5.7 - j6.8 3600 4.1 - j15.8 5.7 - j6.6 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- Figure 6. Series Equivalent Input and Output Impedance MRFG35010 5-456 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 1. Class A Common Source S-Parameters at VDS = 12 Vdc, IDQ = 1000 mA S11 S21 S12 S22 f GHz |S11| |S21| |S12| |S22| 0.50 0.956 -177.95 5.591 79.60 0.007 15.64 0.741 179.71 0.60 0.957 -179.86 4.668 76.30 0.007 23.81 0.739 179.15 0.70 0.956 178.44 4.007 73.21 0.008 23.84 0.736 178.75 0.80 0.956 177.05 3.520 70.18 0.008 26.09 0.736 178.29 0.90 0.954 175.83 3.138 67.20 0.009 30.55 0.735 177.85 1.00 0.955 174.61 2.842 64.30 0.010 28.91 0.735 177.42 1.10 0.954 173.42 2.604 61.65 0.009 31.64 0.734 176.95 1.20 0.952 172.29 2.402 58.87 0.011 31.90 0.735 176.52 1.30 0.952 171.25 2.236 56.13 0.011 36.06 0.735 175.97 1.40 0.950 170.02 2.098 53.34 0.011 33.99 0.736 175.52 1.50 0.950 168.36 2.054 50.41 0.011 32.65 0.725 174.86 1.60 0.948 167.24 1.944 47.63 0.012 32.47 0.725 174.31 1.70 0.946 166.01 1.850 44.77 0.013 37.07 0.725 173.70 1.80 0.944 164.67 1.769 42.06 0.014 34.40 0.725 172.90 1.90 0.943 163.59 1.698 39.29 0.015 35.71 0.725 172.32 2.00 0.942 162.31 1.638 36.53 0.015 37.47 0.724 171.58 2.10 0.940 161.09 1.580 33.69 0.016 35.82 0.724 170.75 2.20 0.938 159.66 1.532 30.84 0.017 35.69 0.722 169.89 2.30 0.937 158.30 1.491 28.03 0.017 35.43 0.721 169.04 2.40 0.935 156.86 1.454 25.19 0.019 34.19 0.720 168.15 2.50 0.934 155.35 1.422 22.38 0.020 34.10 0.718 167.32 2.60 0.932 153.83 1.396 19.54 0.021 35.51 0.718 166.38 2.70 0.928 152.26 1.375 16.68 0.022 33.15 0.716 165.61 2.80 0.926 150.58 1.356 13.80 0.023 30.84 0.714 164.67 2.90 0.923 148.97 1.342 10.91 0.025 31.00 0.711 163.77 3.00 0.920 147.18 1.332 7.87 0.027 29.11 0.708 162.89 3.10 0.917 145.27 1.328 4.88 0.028 28.98 0.704 161.96 3.20 0.913 143.23 1.326 1.73 0.030 27.36 0.699 161.08 3.30 0.908 141.12 1.329 -1.48 0.032 25.93 0.694 160.09 3.40 0.903 138.91 1.335 -4.80 0.034 24.33 0.687 159.09 3.50 0.897 136.46 1.346 -8.26 0.036 22.30 0.679 158.02 3.60 0.893 133.77 1.360 -11.89 0.039 19.80 0.670 156.93 3.70 0.884 130.86 1.375 -15.61 0.042 17.46 0.659 155.90 3.80 0.875 127.58 1.393 -19.50 0.045 15.22 0.648 154.96 3.90 0.866 124.06 1.417 -23.55 0.048 13.31 0.636 154.06 4.00 0.851 120.13 1.443 -27.75 0.052 10.27 0.626 153.16 4.10 0.833 115.98 1.472 -32.06 0.056 7.36 0.618 152.14 4.20 0.814 111.48 1.505 -36.63 0.060 4.18 0.609 151.13 4.30 0.793 106.69 1.541 -41.44 0.065 1.13 0.602 149.84 4.40 0.771 101.44 1.581 -46.57 0.071 -3.19 0.592 148.47 4.50 0.748 95.69 1.622 -51.82 0.076 -7.50 0.582 147.06 4.60 0.723 89.38 1.668 -57.33 0.082 -11.79 0.575 145.72 4.70 0.697 82.41 1.721 -63.32 0.089 -16.57 0.568 144.03 4.80 0.672 74.51 1.771 -69.70 0.096 -22.28 0.559 142.02 4.90 0.647 65.82 1.818 -76.56 0.103 -28.04 0.549 139.82 5.00 0.622 56.14 1.860 -83.67 0.110 -33.91 0.539 137.39 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010 5-457 Table 2. Class AB Common Source S-Parameters at VDS = 12 Vdc, IDQ = 180 mA S11 S21 S12 S22 f GHz |S11| |S21| |S12| |S22| 0.50 0.936 -175.05 5.292 80.70 0.014 3.73 0.735 -178.66 0.60 0.936 -177.28 4.422 77.20 0.014 3.63 0.735 -179.61 0.70 0.935 -179.21 3.803 74.02 0.015 3.78 0.735 179.80 0.80 0.935 179.21 3.341 70.87 0.014 7.22 0.736 179.20 0.90 0.935 177.77 2.983 67.85 0.014 5.83 0.738 178.58 1.00 0.934 176.46 2.701 64.80 0.015 7.03 0.738 178.09 1.10 0.934 175.26 2.473 62.00 0.015 7.15 0.738 177.54 1.20 0.933 174.05 2.284 59.24 0.014 6.85 0.739 177.01 1.30 0.933 172.86 2.124 56.47 0.015 6.90 0.740 176.42 1.40 0.933 171.71 1.991 53.70 0.015 8.93 0.739 175.92 1.50 0.929 170.06 1.948 50.73 0.016 7.81 0.730 175.22 1.60 0.930 168.89 1.845 47.88 0.016 8.58 0.731 174.51 1.70 0.927 167.73 1.757 44.99 0.016 8.16 0.731 173.88 1.80 0.926 166.37 1.678 42.32 0.016 10.00 0.730 173.09 1.90 0.925 165.33 1.610 39.48 0.017 9.25 0.732 172.45 2.00 0.923 164.05 1.551 36.70 0.018 11.89 0.731 171.71 2.10 0.921 162.82 1.498 33.90 0.018 10.06 0.731 170.85 2.20 0.920 161.49 1.451 31.07 0.018 10.11 0.730 170.01 2.30 0.918 160.17 1.411 28.22 0.019 10.86 0.729 169.14 2.40 0.916 158.74 1.376 25.43 0.020 9.05 0.728 168.25 2.50 0.916 157.35 1.347 22.58 0.020 8.57 0.727 167.43 2.60 0.913 155.97 1.321 19.80 0.021 9.64 0.727 166.51 2.70 0.912 154.45 1.300 16.98 0.022 10.23 0.725 165.61 2.80 0.909 152.83 1.280 14.05 0.023 9.68 0.723 164.76 2.90 0.907 151.25 1.268 11.14 0.024 10.24 0.719 163.70 3.00 0.904 149.54 1.257 8.18 0.026 7.35 0.717 162.83 3.10 0.901 147.76 1.253 5.20 0.026 9.11 0.714 161.86 3.20 0.896 145.88 1.253 2.11 0.028 6.33 0.709 160.85 3.30 0.893 143.83 1.255 -1.10 0.030 7.09 0.704 159.82 3.40 0.887 141.78 1.260 -4.43 0.031 5.16 0.697 158.76 3.50 0.882 139.43 1.268 -7.81 0.033 4.74 0.690 157.60 3.60 0.876 136.99 1.281 -11.29 0.035 4.34 0.682 156.46 3.70 0.870 134.24 1.295 -14.96 0.038 1.64 0.672 155.26 3.80 0.863 131.29 1.311 -18.72 0.040 0.43 0.660 154.16 3.90 0.853 127.96 1.334 -22.68 0.042 -2.33 0.650 153.12 4.00 0.840 124.33 1.354 -26.85 0.046 -4.01 0.639 152.16 4.10 0.825 120.40 1.386 -31.01 0.049 -6.67 0.632 150.97 4.20 0.807 116.26 1.414 -35.40 0.053 -9.06 0.624 149.72 4.30 0.787 111.78 1.453 -40.01 0.057 -11.29 0.617 148.33 4.40 0.767 106.97 1.492 -44.83 0.061 -14.79 0.608 146.78 4.50 0.745 101.74 1.537 -49.99 0.066 -18.66 0.599 145.00 4.60 0.721 95.90 1.579 -55.50 0.071 -22.20 0.589 143.33 4.70 0.697 89.39 1.633 -61.25 0.077 -26.02 0.580 141.41 4.80 0.674 82.09 1.685 -67.46 0.084 -30.63 0.569 139.21 4.90 0.647 73.93 1.740 -74.01 0.090 -35.78 0.557 136.94 5.00 0.622 64.84 1.790 -81.02 0.097 -41.70 0.545 134.20 MRFG35010 5-458 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. '!"" The RF GaAs Line '() * 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. * Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 900 mW Power Gain -- 10 dB Efficiency -- 28% * 9 Watts P1dB @ 3.55 GHz CASE 466-02, STYLE 1 PLD-1.5 PLASTIC * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MAXIMUM RATINGS Rating Drain-Source Voltage Symbol Value Unit VDSS 15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 22.7(2) 0.15(2) Watts W/C Gate-Source Voltage VGS -5 Vdc RF Input Power Pin 33 dBm Storage Temperature Range Tstg - 65 to +150 C Channel Temperature(1) Tch 175 C Operating Case Temperature Range TC - 40 to +85 C Symbol Max Unit RJC 6.6(2) C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating MSL1 (1) For reliable operation, the operating channel temperature should not exceed 150C. (2) Simulated. REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010MT1 5-459 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS -- 2.9 -- Adc Off State Leakage Current (VGS = -0.4 Vdc, VDS = 0 Vdc) IGSS -- < 1.0 100 Adc Off State Drain Current (VDS = 12 Vdc, VGS = -1.9 Vdc) IDSO -- 0.1 1.0 mAdc Off State Current (VDS = 28.5 Vdc, VGS = -2.5 Vdc) IDSX -- 2.0 15 mAdc Gate-Source Cut-off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) -1.2 -1.0 -0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) VGS(Q) -1.2 -0.95 -0.7 Vdc Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Gps 9.0 10 -- dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) P1dB -- 9 -- W hD 23 28 -- % ACPR -- -43 -40 dBc Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) MRFG35010MT1 5-460 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " < 9 9 9" 98 97 96 9 96 97 98 9" 9 9 95 3 9 9 9 9 34 ) /1 9 5 95 " 95 6 7 9 8 9 5 9 34 /1 /1 9 95 Z1, Z14 Z2 Z3 Z4 Z5, Z10 Z6 Z7 95 95" 0.044 x 0.125 Microstrip 0.044 x 0.105 Microstrip 0.340 x 0.357 Microstrip 0.380 x 0.426 Microstrip 0.527 x 0.015 Microstrip 0.027 x 0.347 Microstrip 0.538 x 0.115 Microstrip 98 Z8 Z9 Z11 Z12 Z13 PCB 96 0.439 x 0.136 Microstrip 0.150 x 0.280 Microstrip 0.349 x 0.302 Microstrip 0.055 x 0.130 Microstrip 0.044 x 0.502 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 1. 3.5 GHz Test Circuit Schematic Table 1. 3.5 GHz Test Circuit Component Designations and Values Designation Description C1, C26 7.5 pF Chip Capacitors, B Case, ATC C2, C14 0.4 pF Chip Capacitors (0805), AVX C3, C13, C30 0.2 pF Chip Capacitors (0805), AVX C4, C5, C15, C16 3.9 pF Chip Capacitors, AVX C6, C17 10 pF Chip Capacitors, A Case, ATC C7, C18 100 pF Chip Capacitors, A Case, ATC C8, C19 100 pF Chip Capacitors, B Case, ATC C9, C20 1000 pF Chip Capacitors, B Case, ATC C10, C21 0.1 F Chip Capacitors, B Case, ATC C11, C22 3.9 F Chip Capacitors, B Case, ATC C12, C23 22 F, 35 V Tantalum Surface Mount Capacitors, Newark C25, C27 1.0 pF Chip Capacitors (0805), AVX C29 0.7 pF Chip Capacitor (0805), AVX R1 50 W Chip Resistor, Newark MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010MT1 5-461 97 98 + 96 + 9 9 9" 98 9 97 3 9 9 9 95 95 9 9 95 96 9 9 95 95 9" 9 9 9 9 95" 98 96 MRFG35010M 3*.A Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010MT1 5-462 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS " 3 B" B" < 0& 7" 5 ! 7 L 5 B9$ < "787eB5"5_ "77eB"6_ B" B5" B5" B" B" 9 3 B" B" B" 9 3A0:& 3 ) /1A31/3)A<<A0: " B" " " B" /1 /1 3 11< Figure 3. W-CDMA ACPR and Input Return Loss versus Output Power " < 0& 7" 5 ! 7 L 5 B9$ < "787eB5"5_ "77eB"6_ " " 5" 1 " " " " 8 " PAEAA 3AA449)9@AH 1 A13)</93A)A0: " " /1 /1 3 11< Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010MT1 5-463 Table 2. Class AB Common Source S-Parameters at VDS = 12 Vdc, IDQ = 180 mA S11 S21 S12 S22 f GHz |S11| |S21| |S12| |S22| 0.5 0.946 -177.11 4.710 82.28 0.016 8.19 0.759 -179.39 0.55 0.945 -178.28 4.303 80.79 0.016 7.57 0.758 -179.99 0.6 0.944 -179.44 3.963 79.23 0.016 7.60 0.758 179.39 0.65 0.945 179.50 3.674 77.69 0.016 7.44 0.758 178.74 0.7 0.945 178.60 3.427 76.28 0.016 7.44 0.757 177.98 0.75 0.944 177.66 3.211 74.83 0.016 7.21 0.757 177.28 0.8 0.945 176.74 3.023 73.24 0.017 7.65 0.756 176.57 0.85 0.945 175.95 2.853 71.74 0.017 7.16 0.756 175.75 0.9 0.944 175.17 2.705 70.36 0.017 7.34 0.756 174.99 0.95 0.945 174.36 2.570 68.88 0.017 7.31 0.755 174.18 1 0.945 173.63 2.447 67.47 0.017 7.08 0.755 173.33 1.05 0.944 172.90 2.337 66.06 0.017 7.29 0.756 172.51 1.1 0.944 172.09 2.234 64.52 0.017 7.56 0.756 171.82 1.15 0.944 171.29 2.139 63.11 0.017 7.46 0.756 171.01 1.2 0.944 170.57 2.052 61.73 0.017 7.43 0.757 170.22 1.25 0.943 169.71 1.971 60.26 0.017 7.47 0.757 169.52 1.3 0.944 168.85 1.894 58.81 0.017 7.28 0.757 168.83 1.35 0.940 168.20 1.823 57.49 0.017 7.56 0.755 168.39 1.4 0.946 167.07 1.754 56.13 0.017 7.92 0.762 167.55 1.45 0.943 166.35 1.691 54.75 0.018 7.59 0.759 167.32 1.5 0.944 163.30 1.626 53.36 0.017 7.06 0.762 169.20 1.55 0.943 162.54 1.573 52.16 0.017 7.24 0.763 168.75 1.6 0.942 161.81 1.523 50.87 0.017 7.48 0.764 168.22 1.65 0.945 161.17 1.474 49.56 0.018 7.46 0.765 167.71 1.7 0.946 160.55 1.429 48.35 0.017 7.46 0.766 167.18 1.75 0.945 160.01 1.387 47.14 0.018 7.84 0.767 166.73 1.8 0.945 159.48 1.348 45.88 0.018 7.89 0.767 166.15 1.85 0.947 159.00 1.310 44.70 0.018 7.97 0.768 165.58 1.9 0.946 158.52 1.274 43.55 0.018 7.87 0.770 165.10 1.95 0.945 158.06 1.240 42.30 0.018 7.89 0.769 164.54 2 0.948 157.71 1.209 41.23 0.018 7.61 0.771 164.05 2.05 0.947 157.30 1.179 40.16 0.018 7.78 0.772 163.59 2.1 0.947 156.92 1.152 39.09 0.018 7.65 0.773 163.12 2.15 0.948 156.58 1.127 37.97 0.018 7.40 0.773 162.56 2.2 0.948 156.32 1.102 36.90 0.019 7.22 0.773 162.01 2.25 0.948 156.04 1.079 35.82 0.019 6.98 0.775 161.53 2.3 0.949 155.73 1.058 34.70 0.019 7.24 0.775 161.05 2.35 0.949 155.33 1.037 33.62 0.019 7.52 0.775 160.43 2.4 0.948 154.99 1.019 32.54 0.019 7.60 0.776 159.99 2.45 0.948 154.57 1.002 31.44 0.019 7.49 0.777 159.53 2.5 0.948 154.13 0.986 30.35 0.019 7.69 0.776 158.91 2.55 0.946 153.68 0.971 29.28 0.019 8.05 0.777 158.40 2.6 0.946 153.15 0.957 28.12 0.020 8.01 0.777 157.88 2.65 0.946 152.54 0.943 26.91 0.020 8.01 0.776 157.34 2.7 0.945 151.98 0.930 25.73 0.020 7.82 0.777 156.80 2.75 0.943 151.22 0.918 24.52 0.021 7.27 0.778 156.36 MRFG35010MT1 5-464 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table 2. Class AB Common Source S-Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued) S11 S21 S12 S22 f GHz |S11| |S21| |S12| |S22| 2.8 0.943 150.66 0.906 23.27 0.021 6.42 0.776 155.80 2.85 0.943 149.88 0.894 22.02 0.022 5.21 0.777 155.28 2.9 0.942 149.16 0.883 20.80 0.021 4.17 0.778 154.81 2.95 0.942 148.32 0.872 19.56 0.021 4.03 0.778 154.25 3 0.943 147.41 0.862 18.28 0.021 3.53 0.778 153.67 3.05 0.942 146.51 0.853 16.96 0.022 3.11 0.780 153.18 3.1 0.940 145.45 0.842 15.64 0.022 2.65 0.780 152.64 3.15 0.940 144.41 0.833 14.29 0.022 2.43 0.779 152.04 3.2 0.941 143.33 0.823 13.00 0.022 2.48 0.782 151.43 3.25 0.938 142.25 0.814 11.67 0.022 2.48 0.781 150.92 3.3 0.939 141.15 0.804 10.32 0.022 2.08 0.781 150.33 3.35 0.939 140.02 0.795 8.97 0.022 1.99 0.782 149.74 3.4 0.938 138.89 0.785 7.61 0.022 2.11 0.783 149.19 3.45 0.938 137.88 0.776 6.26 0.023 2.05 0.782 148.72 3.5 0.939 136.68 0.767 4.96 0.023 1.79 0.783 147.97 3.55 0.938 135.63 0.757 3.67 0.023 1.56 0.785 147.40 3.6 0.938 134.63 0.748 2.34 0.024 1.02 0.783 146.88 3.65 0.939 133.60 0.739 1.04 0.024 0.44 0.783 146.20 3.7 0.938 132.68 0.729 -0.25 0.024 -0.54 0.785 145.61 3.75 0.937 131.84 0.720 -1.47 0.024 -1.30 0.785 145.17 3.8 0.937 130.92 0.711 -2.69 0.024 -1.98 0.785 144.52 3.85 0.938 130.07 0.702 -3.89 0.024 -2.38 0.786 143.87 3.9 0.938 129.29 0.694 -5.07 0.024 -2.22 0.787 143.24 3.95 0.939 128.60 0.686 -6.23 0.024 -2.00 0.787 142.61 4 0.939 127.88 0.678 -7.34 0.025 -1.80 0.788 141.94 4.05 0.939 127.23 0.671 -8.46 0.025 -2.04 0.789 141.34 4.1 0.941 126.66 0.664 -9.57 0.025 -2.17 0.789 140.69 4.15 0.941 126.23 0.658 -10.65 0.025 -2.15 0.788 140.01 4.2 0.940 125.73 0.651 -11.72 0.026 -2.48 0.789 139.31 4.25 0.939 125.28 0.645 -12.82 0.026 -2.81 0.789 138.65 4.3 0.940 124.85 0.640 -13.86 0.026 -2.79 0.788 137.91 4.35 0.940 124.45 0.635 -14.92 0.027 -2.73 0.789 137.16 4.4 0.939 124.01 0.630 -16.00 0.027 -3.22 0.789 136.45 4.45 0.939 123.63 0.627 -17.01 0.028 -3.26 0.788 135.67 4.5 0.939 123.27 0.623 -18.03 0.028 -3.64 0.788 134.88 4.55 0.937 122.84 0.620 -19.03 0.029 -3.74 0.789 134.16 4.6 0.937 122.32 0.619 -20.17 0.029 -4.57 0.788 133.36 4.65 0.937 121.88 0.618 -21.26 0.030 -5.02 0.788 132.50 4.7 0.936 121.36 0.617 -22.45 0.030 -6.01 0.788 131.67 4.75 0.935 120.72 0.615 -23.68 0.031 -7.22 0.787 130.83 4.8 0.935 120.04 0.614 -24.90 0.031 -7.64 0.786 129.91 4.85 0.934 119.35 0.613 -26.12 0.031 -8.05 0.786 129.03 4.9 0.932 118.49 0.613 -27.41 0.031 -8.39 0.786 128.20 4.95 0.931 117.69 0.614 -28.72 0.032 -8.32 0.785 127.24 5 0.929 116.74 0.614 -30.05 0.033 -8.48 0.786 126.32 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRFG35010MT1 5-465 5-466 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Six Motorola RF Amplifier ICs and Modules - Data Sheets Device Number Page Number Amplifier ICs and Modules MHL9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHL9236M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHL9318 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-6 MHL9838 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-9 MHL18336 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-12 MHL18926 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13 MHL19338 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-14 MHL19926 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-15 MHL19936 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-16 MHL21336 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-19 MHPA19010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-22 MHPA21010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-25 MHVIC910HR2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-28 MHVIC915R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-35 MW4IC915MBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-43 MW4IC915GMBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-43 MWIC930R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-53 MWIC930GR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-53 General Purpose Linear Amplifier Modules MHW1345 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 6-61 6-1 6-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. * Third Order Intercept: 47 dBm Typ * Power Gain: 30.5 dB Typ (@ f = 880 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA, CDMA, QPSK or Analog Systems 800-960 MHz 2.5 W, 30.5 dB RF LINEAR LDMOS AMPLIFIERS CASE 301AP-02, STYLES 1, 2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 550 620 mA Power Gain (f = 880 MHz) Gp 29.5 30.5 31.5 dB Gain Flatness (f = 800-960 MHz) GF -- 0.1 0.3 dB Power Output @ 1 dB Comp. (f = 880 MHz) Pout 1 dB 33.0 34.0 -- dBm Input VSWR (f = 800-960 MHz) VSWRin -- 1.2:1 1.5:1 Output VSWR (f = 800-960 MHz) VSWRout -- 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 46.0 47.0 -- dBm Noise Figure NF -- 3.5 4.5 dB (f = 800-960 MHz) REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHL9236 MHL9236M 6-3 TYPICAL CHARACTERISTICS '+ " % % " ,-- . " ,/ . " " " Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency ,-- . " ,/ . " " Figure 2. P1dB, ITO versus Frequency # "$ # -- " "# " " ! '+ -- ! * " ,-- . " ,/ . " Figure 3. Power Gain, IDD versus Temperature ,-- . " ,/ . " ' + &'! &'!(%)) * " " ! " Figure 4. ITO, P1dB versus Temperature " "*" * * !) ' -%! "* ,-- . " ,/ . " " ! *$ " Figure 5. Phase(1), Group Delay(1) versus Temperature MHL9236 MHL9236M 6-4 *" * !) %! * * ' " " ! ,-- . " ,/ . $ *" " Figure 6. Gain Flatness, Phase Linearity versus Temperature MOTOROLA WIRELESS RF PRODUCT DEVICE DATA !)%! "* !) ' '!%!)) '-%! 0) " TYPICAL CHARACTERISTICS # -- * *$ '+ *# * "" " " ,%!' ,%) * "" ' -%! "*" !) "* * " ,%!' ,%) " MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " ,%!' ,%) " * * * * ' * * *$ "* * !) %! *# * . $ . " *" Figure 9. Phase(1), Group Delay(1) versus Voltage !)%! "* '-%! 0) * !) "* " " Figure 8. ITO, P1dB versus Voltage "" . . " " . . " Figure 7. Power Gain, IDD versus Voltage " *" "" " " ,%!' ,%) " * * Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL9236 MHL9236M 6-5 ' '!%!)) . . " -- ! ' + &'! * *# SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 49 dBm Typ * Power Gain: 17.5 dB Typ (@ f = 880 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA and CDMA Multi-Carrier Applications 3.0 W, 17.5 dB 860-900 MHz RF LINEAR LDMOS AMPLIFIER CASE 301AS-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Rating Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +20 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 500 560 mA Gp 17 17.5 18.5 dB Power Gain (f = 880 MHz) Gain Flatness (f = 860-900 MHz) GF -- 0.1 0.2 dB Power Output @ 1 dB Comp. (f = 880 MHz) Pout 1 dB -- 35.5 -- dBm Input VSWR (f = 860-900 MHz) VSWRin -- 1.2:1 1.5:1 Output VSWR (f = 860-900 MHz) VSWRout -- 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 47 49 -- dBm Noise Figure NF -- 3 4.5 dB (f = 960 MHz) REV 2 MHL9318 6-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA . " ,-- . " , " '+ % . " ,-- . " , % " " " Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency " '+ -- # $ " " ! # $ " !) "# " "*" * "* *" *$ * *# "# " " ! * " Figure 5. Phase(1), Group Delay(1) versus Temperature MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " " ! " * . $ ,-- . " , ' '!%!)) !) ' -%! " . ,-- . " , Figure 4. ITO, P1dB versus Temperature "* " $ " '-%! 0) . ,-- . " , " " Figure 3. Power Gain, IDD versus Temperature " ' + &'! $ " -- ! . ,-- . " , # Figure 2. P1dB, ITO versus Frequency $ " * *" * * * * *" !) %! * * ' " " ! " Figure 6. Gain Flatness, Phase Linearity versus Temperature MHL9318 6-7 !)%! &'!(%)) '+ #* -- . . " " #*" #* "" # " " ,%!' ,%) " "" !) !) *$ "* ' -%! * . . " " ,%!' ,%) " *# * Figure 9. Phase(1), Group Delay(1) versus Voltage MHL9318 6-8 !)%! *$ '-%! 0) "* " . . " " " ,%!' ,%) " " Figure 8. ITO, P1dB versus Voltage *$ "* "" " "* ""* Figure 7. Power Gain, IDD versus Voltage ""* * * * *# *" * *" * !) %! * * * ' * "" " " ,%!' ,%) * . $ . " " *" * Figure 10. Phase Linearity, Gain Flatness versus Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ' '!%!)) #* " ' + &'! #* # -- ! * TYPICAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 50 dBm Typ * Power Gain: 31 dB Typ (@ f = 880 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA and CDMA Multi-Carrier Applications 800-925 MHz 8.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP-02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +6 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 770 800 mA Power Gain (f = 880 MHz) Gp 30 31 32 dB Gain Flatness (f = 800-925 MHz) GF -- 0.1 0.3 dB Power Output @ 1 dB Comp. (f = 880 MHz) Pout 1 dB -- 39 -- dBm Input VSWR (f = 800-925 MHz) VSWRin -- 1.2:1 1.5:1 Output VSWR (f = 800-925 MHz) VSWRout -- 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 49 50 -- dBm Noise Figure NF -- 3.7 4.5 dB (f = 925 MHz) REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHL9838 6-9 TYPICAL CHARACTERISTICS ,-- . " ,/ . " '+ " % " ,-- . " ,/ . " " " Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency # -- # " " " ! $ # ,-- . " ,/ . " #" " " " ! * ,-- . " ,/ . ' -%! "* *$ " " ! * " Figure 5. Phase(1), Group Delay(1) versus Temperature MHL9838 6-10 ,-- . " ,/ . $" ' '!%!)) "* '-%! 0) !) !) " * *" "*" Figure 4. ITO, P1dB versus Temperature " Figure 3. Power Gain, IDD versus Temperature " " # "$ ' + &'! '+ $ " -- ! ,-- . " ,/ . " # Figure 2. P1dB, ITO versus Frequency " % *# * *" * * ' * * !) %! * * " " ! *" " Figure 6. Gain Flatness, Phase Linearity versus Temperature MOTOROLA WIRELESS RF PRODUCT DEVICE DATA !)%! &'!(%)) TYPICAL CHARACTERISTICS * -- " $ # '+ . . " * "" " " ,%!' ,%) " " "" "* "* "* ' -%! "*$ * "* !) . . " * "" " " ,%!' ,%) " "*# "* Figure 9. Phase(1), Group Delay(1) versus Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA !)%! " " " ,%!' ,%) " Figure 8. ITO, P1dB versus Voltage '-%! 0) Figure 7. Power Gain, IDD versus Voltage . . " * * * * * * !) %! * *" ' *" * *" * . $" . " * * "" " " ,%!' ,%) " *$ * Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL9838 6-11 ' '!%!)) *# *$ # * !) -- ! ' + &'! * $ SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 46 dBm Typ * Power Gain: 30 dB Typ (@ f =1850 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 1800-1900 MHz 4 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP-02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Rating ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 500 525 mA Power Gain (f =1850 MHz) Gp 29 30 31 dB Gain Flatness (f = 1800-1900 MHz) GF -- 0.2 0.4 dB Power Output @ 1 dB Comp. (f = 1850 MHz) Pout 1 dB 35 36 -- dBm Input VSWR (f = 1800-1900 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 1847 MHz, f2 = 1852 MHz) ITO 45 46 -- dBm Noise Figure NF -- 4.2 4.5 dB (f = 1850 MHz) REV 1 MHL18336 6-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA, EDGE and CDMA. * Third Order Intercept Point: 50 dBm Typ * Power Gain: 28.6 dB Typ (@ f = 1842 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Application 1805-1880 MHz, 10 W, 28.6 dB RF LINEAR LDMOS AMPLIFIER CASE 301AY-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +7 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Rating ELECTRICAL CHARACTERISTICS (TC = +25C; VDD = 26 Vdc; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 1.1 1.15 A Power Gain (f = 1842 MHz) Gp 27.6 28.6 29.6 dB Gain Flatness (f = 1805-1880 MHz) GF -- 0.3 0.5 dB Power Output @ 1 dB Compression (f = 1842 MHz) P1 dB 39 40 -- dBm Input VSWR (f = 1805-1880 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 =1839 MHz, f2=1844 MHz) ITO 49.5 50 -- dBm Noise Figure (f = 1880 MHz) NF -- 4.2 5 dB NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHL18926 6-13 SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 46 dBm Typ * Power Gain: 30 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 1900-2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP-02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Rating ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 500 525 mA Power Gain (f = 1960 MHz) Gp 29 30 31 dB Gain Flatness (f = 1900-2000 MHz) GF -- 0.1 0.4 dB Power Output @ 1 dB Comp. (f = 1950 MHz) Pout 1 dB 35 36 -- dBm Input VSWR (f = 1900-2000 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) ITO 45 46 -- dBm Noise Figure NF -- 4.2 4.5 dB (f = 2000 MHz) REV 2 MHL19338 6-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA, EDGE and CDMA. * Third Order Intercept Point: 50 dBm Typ * Power Gain: 29.4 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Application 1930-1990 MHz, 10 W, 29.4 dB RF LINEAR LDMOS AMPLIFIER CASE 301AY-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +7 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Rating ELECTRICAL CHARACTERISTICS (TC = +25C; VDD = 26 Vdc; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 1 1.05 A Power Gain (f = 1960 MHz) Gp 28.4 29.4 30.4 dB Gain Flatness (f = 1930-1990 MHz) GF -- 0.3 0.5 dB Power Output @ 1 dB Compression (f = 1960 MHz) P1 dB 39 40 -- dBm Input VSWR (f = 1930-1990 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 =1957 MHz, f2=1962 MHz) ITO 49.5 50 -- dBm Noise Figure (f = 1990 MHz) NF -- 4.2 5 dB NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHL19926 6-15 SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 49.5 dBm Typ * Power Gain: 29 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 1900-2000 MHz 12 W, 29 dB RF LINEAR LDMOS AMPLIFIER CASE 301AY-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Rating ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 1.4 1.45 A Power Gain (f = 1960 MHz) Gp 28 29 30 dB Gain Flatness (f = 1900-2000 MHz) GF -- 0.2 0.4 dB Power Output @ 1 dB Comp. (f = 1950 MHz) P1dB 40 41 -- dBm Input VSWR (f = 1900-2000 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) ITO 49 49.5 -- dBm Noise Figure (f = 2000 MHz) NF -- 4.2 4.5 dB REV 2 MHL19936 6-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS '+ " % % " ,-- . " ,/ . "_ " "" " " " # " "$ ,-- . " ,/ . $ ' + &'! '+ -- "# " " -- ! " " "" Figure 12. P1dB, ITO versus Frequency " " " Figure 11. Power Gain, Input Return Loss, Output Return Loss versus Frequency $ " " " " ,-- . " ,/ . $ " ! _ " $ " ! _ Figure 13. Power Gain, IDD versus Temperature Figure 14. ITO, P1dB versus Temperature * * # * *" *" ' -%! !) "*$ "* "*# "* !) # ,-- . " ,/ . $ " " Figure 15. Delay(1) Group Temperature (1)In Production Test Fixture MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "* " * * !) %! * ' * * ,-- . " ,/ . $ $ . "_ *" * " " *" " ! _ ! _ Phase(1), "* ' '!%!)) *" '-%! 0) # ## ,-- . " ,/ . "_ !)%! ' + &'!(%)) versus Figure 16. Gain Flatness, Phase Linearity versus Temperature MHL19936 6-17 " -- . $ . "_ " " '+ " " " $ # "" " " ,%!' ,%) ,%!' ,%) Figure 18. ITO, P1dB versus Voltage Figure 17. Power Gain, IDD versus Voltage "* * * "* * * ' -%! "* "* !) "* # # . $ . "_ "" " " " "* "* '-%! 0) ' '!%!)) # !) " * * !) %! * * *" *" ' * * "" " " " ,%!' ,%) ,%!' ,%) Figure 19. Phase(1), Group Delay(1) versus Voltage Figure 20. Phase Linearity, Gain Flatness versus Voltage (1)In Production Test Fixture MHL19936 6-18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA !)%! " . $ . "_ "" . $# " . $" . "_ $ -- ! ' + &'! SEMICONDUCTOR TECHNICAL DATA The RF Line ! Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. * Third Order Intercept: 45 dBm Typ * Power Gain: 31 dB Typ (@ f = 2140 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 2110-2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP-02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +5 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Symbol Supply Current Min Typ Max Unit IDD -- 500 525 mA Power Gain (f = 2140 MHz) Gp 30 31 32 dB Gain Flatness (f = 2110-2170 MHz) GF -- 0.15 0.4 dB Power Output @ 1 dB Comp. (f = 2140 MHz) Pout 1 dB 34 35 -- dBm Input VSWR (f = 2110-2170 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) ITO 44 45 -- dBm Noise Figure NF -- 4.5 5 dB (f = 2170 MHz) REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHL21336 6-19 TYPICAL CHARACTERISTICS ,-- . " ,/ . "_ '+ ,-- . " ,/ . "_ " % % " " "" " " " " $ " " "" " " Figure 21. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 22. P1dB, ITO versus Frequency ,-- . " ,/ . " ' + &'! ,-- . " ,/ . " # -- ! -- # " " " " " " " ! _ ! _ Figure 23. Power Gain, IDD versus Temperature Figure 24. ITO, P1dB versus Temperature " _ !) * "* * "*" !) ' -%! "* "* " " " ! _ Figure 25. Phase(1), Group Delay(1) versus Temperature *$ " ' '!%!)) ,-- . " ,/ . " '-%! 0) '+ " " ,-- . " ,/ . " "# * " " * * * ' * * *" *" !) %! * * " " " ! _ Figure 26. Gain Flatness, Phase Linearity versus Temperature MHL21336 6-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA _ !)%! ' + &'!(%)) #* # - '+ *" * "" " " " " "# * " "$ * * " # . " . "_ * * -- ! ' + &'! * # * "" * " " " " "# " "$ ,%!' ,%) ,%!' ,%) Figure 27. Power Gain, IDD versus Voltage Figure 28. ITO, P1dB versus Voltage "* . " . "_ _ !) * . " "# . "_ * "*" ' -%! "*" !) "* * *" *" ' *" # * '-%! 0) ' '!%!)) *" * * !) %! * * * $ "" "* " " " " "# " "$ Figure 29. Group Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Delay(1) "" * " " " " "# " "$ ,%!' ,%) ,%!' ,%) Phase(1), . " . "_ _ !)%! * versus Figure 30. Phase Linearity, Gain Flatness versus Voltage MHL21336 6-21 SEMICONDUCTOR TECHNICAL DATA The RF Line "" Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Typical CDMA Performance: 1960 MHz, 28 Volts IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 * Adjacent Channel Power: -51 dBc @ 30 dBm, 885 kHz Channel Spacing * Power Gain: 24.5 dB Min (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * 0.2 dB Typical Gain Flatness * Ideal for Feedforward Base Station Applications 1930-1990 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP-02, STYLE 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating DC Supply Voltage Symbol Value Unit VDD 30 Vdc RF Input Power (Single Carrier CW) Pin +20 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Quiescent Bias Current IDQ 750 mA ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS 8 V Set for Supply Current of 600 mA, TC = 25C, 50 System) Characteristic Supply Current Power Gain (f = 1960 MHz) Gain Flatness (f = 1930-1990 MHz) Power Output @ 1 dB Comp. (f = 1960 MHz) Input VSWR (f = 1930-1990 MHz) Noise Figure (f = 1960 MHz) Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW, 885 kHz Channel Spacing Symbol Min Typ Max Unit IDD -- 600 -- mA Gp 24.5 25 -- dB GF -- 0.2 0.5 dB P1dB -- 41.5 -- dBm VSWRin -- 1.5:1 2:1 NF -- 8 10 dB ACPR -- -58 -51 dBc REV 2 MHPA19010 6-22 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " '+1 % "# " " " ,-- . " ,/ 234 . & - . ! 5 206 )+7/809 "# % " " " "" " " $ $ $ $# $ . "_ _ " "" " " $$ _ _ $ $ $ _ ! _ "_ "7;;86; -! 7;;86; )+7/809 . "* 7;;86; 70<84= . *"" _ $" " ! @ 5 70<84= . 5 @ "* 70<84= . *"" $ $ $ $ $# $ $$ # " " $$ " ,-- . " ,/ - . ! 5A . $$*$ " . $* A . $ " . $ 5 " " 234 & Figure 33. 2-Carrier CDMA IM3 and ACPR versus Frequency Figure 34. Two-Tone CDMA IMD versus Output Power - . ! ! # ! ,-- . " ,/ . $$*$ " . $* ! $ " !!-?!!%&! / - -%!-) / ,-- . " ,/ . & !>9* - . ! "_ $# Figure 32. 2-Carrier CDMA Power Gain and Efficiency versus Frequency " " 234 & Figure 35. Third Order Intermodulation Distortion versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -! : 234 & ---%!-) / ---%!-) / $ Figure 31. Two-Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency . _ "_ " ,-- . " ,/ 234 . & !>9* - . ! " $" " _ " " $ "7;;86; -! 7;;86; )+7/809 . "* 7;;86; 70<84= . *"" '+1 "#* " "# '+1 "* " 234 " "* " " "* ,-- . " ,/ - . ! . $ ' +1 &'! " -! : ' +1 &'! ' +1 &'! %(%(%)) TYPICAL CHARACTERISTICS " " " "* Figure 36. CW Output Power, Efficiency and Gain versus Input Power MHPA19010 6-23 / ! / ,-- . " ,/ - . ! . $ " . $"* $ # # # " ! -! : " " 234 & Figure 37. 2-Carrier CDMA ACPR, IM3 and Efficiency versus Output Power NOTE: VDD (Pin 3) should always be applied before VBIAS (Pin 2). MHPA19010 6-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line # "" Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. * Typical W-CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. * Adjacent Channel Power: -50 dBc @ 30 dBm, 5 MHz Channel Spacing * Power Gain: 23.7 dB Min (@ f = 2140 MHz) * Excellent Phase Linearity and Group Delay Characteristics * 0.2 dB Typical Gain Flatness * Ideal for Feedforward Base Station Applications 2110-2170 MHz 10 W, 23.7 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP-02, STYLE 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power (Single Carrier CW) Pin +20 dBm Storage Temperature Range Tstg -40 to +100 C Operating Case Temperature Range TC -20 to +100 C Quiescent Bias Current IDQ 750 mA Rating ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS 8 V Set for Supply Current of 550 mA, TC = 25C, 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 550 -- mA Power Gain (f = 2140 MHz) Gp 23.7 25 -- dB Gain Flatness (f = 2110-2170 MHz) GF -- 0.2 0.6 dB Power Output @ 1 dB Comp. (f = 2140 MHz) P1dB -- 41.5 -- dBm Input VSWR (f = 2110-2170 MHz) VSWRin -- 1.5:1 2:1 Noise Figure (f = 2140 MHz) NF -- -- 10 dB ACPR -- -55 -50 dBc Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW, 5 MHz Channel Spacing REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHPA21010 6-25 "# " "7;;86; &-! 7;;86; )+7/809 & . * 7;;86; 70<84= " " '+1 " ,-- . " ,/ 234 . & - . ! 206 )+7/809 " % " "" % " "" " " _ ,-- . " ,/ 234 . & !>9* - . ! "" " _ " " "" " " " " "# Figure 38. Two-Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency Figure 39. 2-Carrier W-CDMA Power Gain and Efficiency versus Frequency ,-- . " ,/ 234 80 . & !>9* - . ! . _ " _ "_ "7;;86; &-! 7;;86; )+7/809 * 7;;86; 70<84= ! @ @ 70<84= . * _ _ ! " "_ " "" " " " " "# " ---%!-) / - . # ! ! ,-- . " ,/ . " " . " ! ! " " 234 & &!) Figure 42. Third Order Intermodulation Distortion versus Output Power MHPA21010 6-26 -! : 234 & " " " " ,-- . " ,/ - . ! 5A . "$*$ " . "* A . " " . " " 5 " " 234 & &!) Figure 41. Two-Tone W-CDMA IM3 versus Output Power " "_ Figure 40. 2-Carrier W-CDMA IM3 and ACPR versus Frequency ---%!-) / _ " "" " "_ " " " " " . _ " '+1 " " " 234 " " "" ,-- . " ,/ - . ! . " ' +1 &'! '+1 -! : " ' +1 &'! ' +1 &'! " !!-?!!%&! / ---%!-) / %(%(%)) TYPICAL CHARACTERISTICS " " " " 80 & Figure 43. CW Output Power, Efficiency and Gain versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ,-- . " ,/ - . ! . " " . " / ! / ! " " " -! : 234 & Figure 44. 2-Carrier W-CDMA ACPR, IM3 and Efficiency versus Output Power NOTE: VDD (Pin 3) should always be applied before VBIAS (Pin 2). MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHPA21010 6-27 SEMICONDUCTOR TECHNICAL DATA The RF Line $ % " $ & '()( *+ ,'" The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola's newest High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is packaged in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. * Typical GSM Performance @ Full Frequency Band (921 - 960 MHz), 26 Volts Output Power - 40 dBm (CW) @ P1dB Power Gain - 39 dB @ P1dB Efficiency - 48% @ P1dB * Integrated ESD Protection * Usable Frequency Range - 921 to 960 MHz * Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. 960 MHz, 10 W, 26 V GSM CELLULAR RF LDMOS INTEGRATED CIRCUIT 16 1 CASE 978-03 (PFP-16) MAXIMUM RATINGS Rating Symbol Value Unit Drain Supply Voltage VDD 28 Vdc Gate Supply Voltage VGS 6 Vdc RF Input Power Pin 5 dBm Case Operating Temperature TC - 30 to + 85 C Storage Temperature Range Tstg - 65 to + 150 C Operating Channel Temperature Tch 150 C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 0 (Minimum) Machine Model M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ,- ,-" Unit RJC 2.9 C/W PIN CONNECTIONS 234 ,'!" Max ,- 80 ,'! Symbol ,'! Functional Block Diagram ** ** ,-" " ,-(234 ,- ,-(234 '- ,-(234 80 " ,-(234 ,'! ,-(234 ,'!" ,'! # $ ** ** 2+ ,86< NOTE: MHVIC910HR2 Moisture Sensitivity Level (MSL) = 3. REV 3 MHVIC910HR2 6-28 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA RECOMMENDED OPERATING RANGES Parameter Symbol Value Unit Drain Supply Voltage VDD 26 Vdc 3rd Stage Quiescent Current IDQ3 150 mA 2nd Stage Quiescent Current IDQ2 50 mA 1st Stage Quiescent Current IDQ1 25 mA ELECTRICAL CHARACTERISTICS (VDD = 26 V, VGS set for IDQ3 = 150 mA, TA = 25C matched to a 50 system, frequency range 921 - 960 MHz, unless otherwise noted) Characteristic Symbol Min Typ Max Unit fRF 921 -- 960 MHz Output Power @ 1 dB Compression Point P @ 1dB 39 40 -- dBm Power Gain @ P1dB G @ 1dB 38 39 -- dB Power Added Efficiency @ 1 dB Compression Point PAE @ 1dB 43 48 -- % Input Return Loss @ P1dB IRL @ 1dB -- -15 -10 dB GF GV -- -- .5 5 -- -- dB dB Load Stability (VDS = 24 V to 28 V, Pout = P1dB Down to 0 dBm, All Phase Angles) VSWR 10:1 -- -- -- Ruggedness (VDS = 26 V, Pout = 42 dBm, Load VSWR = 10:1, All Phase Angles) Frequency Range Gain Flatness @ 40 dBm Variation (TC = -30 to +85C @ 40 dBm) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA No Damage After Test MHVIC910HR2 6-29 " " ,-" " ,- ,- # # $ $ ,') " " C6 C7 C9 )3; 7/6 2304 =8+ 7+7/842;1 *# + !,B =8+ 7+7/842; ! ?# # + !,B =8+ 7+7/842; ! C#? + !,B =8+ 7+7/842; ! ?? J1, J2 J3, J4 " 676; ;6757<7D -"B))! )! 2006/42; """ =;676 =8+ 618142;1 " 296;1 " 8E1 Figure 1. 921-960 MHz Demo Board Schematic ,- ,-" ,- " # 0+34 ,' $ 34+34 " ,'" MHVIC910HR2 900 MHz ,' Figure 2. 921-960 MHz Demo Board Component Layout MHVIC910HR2 6-30 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA " ' +1&'! !&!--- : . - . ! . F" - . ! . F" - . " ! $ . F" - . ! . F - . ! # " " " - . ! . $ " 234 & &!) " . - . ! " '+1 &'! 234 & &!) Figure 4. Power Added Efficiency versus Output Power F" . F $ # . F" - . ! $ . F" - . " ! . F - . ! # - . ! . $ $ $" $ $ $ $ $# 80 & Figure 6. Power Gain versus Frequency Pout = 10 W Figure 5. Output Power versus Input Power !&!--- : . - . ! " '+1 &'! 234 & &!) Figure 3. Power Gain versus Output Power . F" - . ! $ . F" - . " ! . F" - . ! # . F - . ! F" F " . #* # * $" $ $ $ $ Figure 7. Power Gain versus Frequency Pout = P1dB MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $# . F" - . ! * * $ . F" - . " ! * . $ $ $" $ $ $ $ $# Figure 8. Power Added Efficiency versus Frequency Pout = 10 W MHVIC910HR2 6-31 " %%)) %%)) " . F F" " "" $ . F F" " ,-- . " ,/ $" $ $ $ ,-- . " ,/ $ "" $# $ $" $ !!-?!!%&! / ,,!'- : * 234 . "* & ) * "* " * * & ) * ,-- . " ,/ . * & ) # $# $ " 234 . "* & ) * & ) # * & ) "* & ) # * & ) * & ) $ . 5 . 5 # ,-- . " ,/ . " $ - -! ) ! Figure 11. Error Vector Magnitude versus IDQ Total Figure 12. Adjacent Channel Power Ratio versus IDQ Total # 234 & &!) 234 & &!) $ - -! ) ! 80 . * & * & * & * & " - 4247E . ! . $ Figure 10. Input Return Loss versus Frequency Pout = P1dB Figure 9. Input Return Loss versus Frequency Pout = 10 W $ # $ " " "" " " " ,-- )% ,%!' ,%) Figure 13. Output Power versus Supply Voltage MHVIC910HR2 6-32 # 80 . * & * & * & * & " - 4247E . # ! . " # $ " " "" " " " " ,-- )% ,%!' ,%) Figure 14. Output Power versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA % " " " ,-- . " ,/ 234 . & - 4247E . " ! <2206 6713;6604 5 206 )+7/809 - " " $ $" $ '+1 " " % " - " " " $ $" $ 234 $ " ,-- . " ,/ - 4247E . ! . * 234 ,-- . " ,/ - 4247E . # ! . * * " "* 80 & & Figure 19. CW Performance @ 880 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA "* * * '+1 " 234 & &!) 234 & &!) " " Figure 18. CW Performance @ 880 MHz -! : ' +1 &'! '+1 * 80 & & $ $ '+1 " Figure 17. Two-Tone Broadband Performance $ $ " $" 234 & &!) <2206 6713;6604 5 206 )+7/809 " 234 . & - 4247E . " ! %%)) --%!-) / -! : ' +1 &'! ,-- . " ,/ $ Figure 16. Two-Tone Broadband Performance '+1 " Figure 15. Two-Tone Broadband Performance " ,-- . " ,/ 234 . & - 4247E . " ! <2206 6713;6604 5 206 )+7/809 - " $ % -! : ' +1 &'! 234 $ " ,-- . " ,/ - 4247E . ! . * * " "* * 80 & & Figure 20. CW Performance @ 880 MHz MHVIC910HR2 6-33 -! : ' +1 &'! %%)) --%!-) / '+1 -! : ' +1 &'! %%)) --%!-) / -! : ' +1 &'! --%!-) / " ,-- . " ,/ . * " . * <2206 6713;6604 5 206 )+7/809 - 4247E . ! ! # ! ! * * 234 & &!) Figure 21. Intermodulation Distortion versus Output Power . $ G2 . G%H . ,-- . " , - . "" ! 234 . f MHz ZOL* 900 7.81 - j4.61 920 7.27 - j4.90 940 6.77 - j5.23 960 6.31 - j5.59 980 5.90 - j5.96 1000 5.53 - j6.36 ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. 246A G%H <71 /=2160 I716 20 4;762 1 I64<660 9780 234+34 +2<6; 70 ;780 6 8/860/D* Figure 22. Large Signal Impedance MHVIC910HR2 6-34 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA $ SEMICONDUCTOR TECHNICAL DATA The RF Line !"# The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola's newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP-16 flat pack package that provides excellent thermal performance through a solderable backside contact. %&'( ) CDMA, GSM/GSM EDGE 746-960 MHz, 15 W, 27 V RF LDMOS WIDEBAND INTEGRATED AMPLIFIER * Typical CDMA Performance: 869-894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1-Carrier N-CDMA, IS-95 CDMA 9-Channel Forward Driver Application Output Power -- 23 dBm Power Gain -- 31 dB Adjacent Channel Power Ratio -- -60 dBc @ 750 kHz in a 30 kHz BW -66 dBc @ 1.98 MHz in a 30 kHz BW Output Application Output Power -- 34 dBm PAE = 21% Adjacent Channel Power Ratio -- -50 dBc @ 750 kHz in a 30 kHz BW * Typical GSM Performance: 921-960 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Output) * Integrated Temperature Compensation Capability * Usable for SCPA and MCPA Architecture * Integrated ESD Protection * Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. CASE 978-03 PFP-16 PLASTIC PIN CONNECTIONS "#$ ! ! % &#& % '# REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHVIC915R2 6-35 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case C/W RJC Driver Application (Pout = 0.2 W CW) Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA 5.07 Output Application (Pout = 2.5 W CW) Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA 3.73 GSM Application (Pout = 15 W CW) Stage 1, 26 Vdc, IDQ = 50 mA Stage 2, 26 Vdc, IDQ = 140 mA 3.41 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) Charge Device Model C4 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22-A113 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola CDMA Test Fixture, 50 hm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 880 MHz, 1-Carrier N-CDMA, IS-95 CDMA 9-Channel Forward Common-Source Amplifier Power Gain (Pout = 23 dBm) Gps 29 31 -- dB -- 21 -- % IRL -- -12 -9 dB Adjacent Channel Power Ratio (Pout = 23 dBm) @ 750 kHz offset in 30 kHz BW ACPR -- -60 -55 dBc Adjacent Channel Power Ratio (Pout = 34 dBm) @ 750 kHz offset in 30 kHz BW ACPR -- -50 -- dBc GF -- 0.2 0.4 dB Power Added Efficiency (Pout = 34 dBm) Input Return Loss (Pout = 23 dBm) Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) (continued) MHVIC915R2 6-36 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit PERFORMANCE TESTS (In Motorola Test Fixture, 50 hm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 865-895 MHz Symbol Min Typ Max Unit Quiescent Current Accuracy over Temperature (-10 to 85C) at Nominal Value Iqt -- 5 -- % Gain Flatness @ Pout = 23 dBm (800 MHz to 960 MHz) GF -- 0.20 -- dB Deviation from Linear Phase @ Pout = 23 dBm -- 0.2 -- Delay -- 2.2 -- ns -- 10 -- Rating Group Delay @ Pout = 23 dBm Insertion Phase Window @ Pout = 23 dBm (part to part) GSM FUNCTIONAL TESTS (In Motorola GSM Test Fixture, 50 hm system) VDS = 26 V, IDQ1 = 50 mA, IDQ2 = 140 mA, 921-960 MHz, CW Symbol Min Typ Max Unit Output Power at 1dB Compression Point P1dB -- 15 -- Watts Common-Source Amplifier Power Gain @ P1dB Gain -- 30 -- dB Drain Efficiency @ P1dB -- 56 -- % Input return Loss @ P1dB IRL -- -16 -- dB Rating EVM @ 5 W Third Order Intermodulation Distortion (15 W PEP, 2 Tone 100 kHz spacing) Drain Efficiency (15 W PEP, 2 Tone 100 kHz spacing) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -- -- 0.9 -- % IMD3 -- -30 -- dBc -- 35 -- % MHVIC915R2 6-37 + !*) + " + % &#& % '# + . + + + + ()*) + + ,!-" + + " ,!-" Z1 Z2 Z3 Z4 Z5 Z6 0.0438 x 0.400 50 Microstrip 0.1709 x 0.1004 Microstrip (not including IC pad length) 0.1222 x 0.1944 Microstrip 0.0836 x 0.3561 Microstrip 0.0438 x 0.2725 Microstrip 0.0504 x 0.3378 Microstrip Z7 Z8 Z9 Z10 Z11 Z12 PCB 0.0504 x 0.480 Microstrip 0.0252 x 0.843 Microstrip 0.0252 x 0.167 Microstrip 0.040 x 0.850 Microstrip 0.025 x 0.400 Microstrip 0.020 x 0.710 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 1. MHVIC915 746-960 MHz Test Circuit Schematic Table 1. MHVIC915 746-960 MHz Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1, C2 4.7 pF High Q Capacitors (0603) ATC600S4R7CW ATC C3, C4 47 pF NPO Capacitors (0805) GRM40-001COG470J050BD Murata C5, C8, C10, C11 1 F X7R Chip Capacitors (1214) GRM42-2X7R105K050AL Murata C6 10 F, 50 V Electrolytic Capacitor ECEV1HA100SP Panasonic C7, C9, C12 0.01 F X7R Chip Capacitors (0805) GRM40X7R103J050BD Murata C13 8.2 pF NPO Chip Capacitor (0805) GRM40-001COG8R2C050BD Murata R1, R2 1 kW Chip Resistors (0603) RM73B2AT102J KOA Speer R3, R4 100 kW Chip Resistors (0603) RM73B2AT104J KOA Speer MHVIC915R2 6-38 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHVIC915 6> ,-" ,- # " ,') ,')" $ " " ,!) ,!)" Figure 2. MHVIC915 746-960 MHz Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHVIC915R2 6-39 . _ " -! : ' +1 &'! TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM) "_ "$ _ " ,-- . " ,/ - . ! -" . ! . "# " * "_ _ " " ,-- . " ,/ - . ! -" . ! . * 234 & &!) Figure 3. Power Gain versus Output Power Figure 4. Drain Efficiency versus Output Power "" ' +1 &'! !&!--- : . _ "_ " ,-- . " ,/ 234 . "* & - . ! -" . ! _ "$ " # $ $ "* " "* . _ " $* # )!%'&@5 / * . _ *$ "_ * _ *# * ,-- . " ,/ - . ! -" . ! . " $ $ Figure 6. Power Added Efficiency versus Frequency *" * _ Figure 5. Power Gain versus Frequency * "_ ,-- . " ,/ 234 . "* & - . ! -" . ! ,,!'- : 234 & &!) " . _ "_ _ # #" # # ,-- . " ,/ - . ! -" . ! . # " 234 & &!) 234 & &!) Figure 7. Error Vector Magnitude versus Output Power Figure 8. Spectral Regrowth @ 400 kHz versus Output Power MHVIC915R2 6-40 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA )!%'&@5 / #* - -%!-) / TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM) . _ ## ##* "_ # #* _ #$ #$* * ,-- . " ,/ - . ! -" . ! . * " " " ; ;6; 4= ;6; #4= ;6; * 234 & &!) " " 80 . & ' +1 &'! ' +1 &'! "* " & "$ " & "# - . ! -" . ! . " " " " 80 . *"# & * "$* "$ - . ! -" . ! . "* " " " ,-- )% ,%!' , Figure 11. Power Gain versus Supply Voltage Figure 12. Power Gain versus Supply Voltage -! )$ $=7006E 2;<7; *"" =7006E 70<84= !A # 5 @ 5 0469;746 70<84= . _ ! / % %)) * & *# & * ,-- )% ,%!' , "_ " _ " Figure 10. Two-Tone Broadband Performance )!' Figure 9. Spectral Regrowth @ 600 kHz versus Output Power ,-- . " ,/ 234 . #* & !>9* - . ! -" . ! . . _ "_ ,-- . " ,/ - . ! -" . ! . * ,-- . " ,/ - . ! -" . ! . _ " 234 & &!) 234 & &!) Figure 13. Input Return Loss versus Output Power Figure 14. Adjacent Channel Power Ratio versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHVIC915R2 6-41 G2 . GE27 . # G80 . $ . $ . # ,-- . " ,/ - . ! -" . ! 234 . *" & & f MHz Zin Zload 750 42.11 - j2.79 8.24 + j5.33 765 40.86 - j1.37 8.31 + j5.56 780 40.09 + j0.06 8.39 + j5.82 795 39.77 + j1.52 8.50 + j5.95 810 39.89 + j3.01 8.62 + j6.02 825 40.49 + j4.39 8.82 + j6.12 840 41.48 + j5.70 8.94 + j6.19 855 42.89 + j6.73 9.12 + j6.17 870 43.51 + j7.03 9.16 + j6.12 885 46.81 + j7.87 9.33 + j6.09 900 49.21 + j7.74 9.38 + j5.95 915 51.79 + j7.02 9.50 + j5.85 930 54.48 + j5.65 9.47 + j5.73 945 57.05 + j3.61 9.54 + j5.63 960 59.16 + j0.75 9.42 + j5.45 Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. 34+34 74/=809 64<2;5 -6>8/6 06; 614 Figure 15. Series Equivalent Input and Output Impedance MHVIC915R2 6-42 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line / 0 '()( *+ The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. * Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power -- 3 Watts Avg. Power Gain -- 31 dB Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM -- 1.5% * Typical Performance: 860-960 MHz, 26 Volts Output Power -- 15 Watts CW Power Gain -- 30 dB Efficiency -- 44% * On Chip Matching (50 Ohm Input, >3 Ohm Output) * Integrated Temperature Compensation Capability with Enable/Disable Function * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA * Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance * Also Available in Gull Wing for Surface Mount * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. /.'1 /.'1! GSM/GSM EDGE, N-CDMA, W-CDMA 860 - 960 MHz, 15 W, 26 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329-08 TO-272 WIDE BODY MULTI-LEAD PLASTIC MW4IC915MBR1 CASE 1329A-02 TO-272 WIDE BODY MULTI-LEAD GULL WING PLASTIC MW4IC915GMBR1 PIN CONNECTIONS ,-) 80 ,') ,')" 234(,-)" 6+6;743;6 2+60174820 Functional Block Diagram ' ,-) " ' 80 ,') ,')" '- # $ 234 ( ,-)" " '- (Top View) REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MW4IC915MBR1 MW4IC915GMBR1 6-43 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS -0.5. +15 Vdc Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ 175 C Symbol Max THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Unit C/W RJC GSM Application (Pout = 15 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 1.48 GSM EDGE Application (Pout = 7.5 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 1.59 CDMA Application (Pout = 3.75 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 1.63 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22-A113 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) Gps 29 31 -- dB Drain Efficiency (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) 29 31 -- % Third Order Intermodulation Distortion (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) IMD3 -- -40 -29 dBc Input Return Loss (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) IRL -- -15 -10 dB Characteristic TWO-TONE FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued) MW4IC915MBR1 MW4IC915GMBR1 6-44 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit PERFORMANCE TESTS (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA IQT -- 5 -- % Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW (Characterize from 869-894 MHz and 920-960 MHz) GF -- 0.2 -- dB Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW (Characterize from 869-894 MHz and 920-960 MHz) -- 0.6 -- Delay -- 2.5 -- ns -- 15 -- Quiescent Current Accuracy over Temperature (-10 to 85C) at Nominal Value Delay @ Pout = 3 W CW Insertion Phase Window @ Pout = 3 W CW TYPICAL PERFORMANCE GSM/GSM EDGE (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power at 1dB Compression Point P1dB -- 20 -- Watts Common-Source Amplifier Power Gain (Pout = 15 W CW) Gps -- 30 -- dB Drain Efficiency (Pout = 15 W CW) -- 44 -- % Input Return Loss (Pout = 15 W CW) IRL -- -15 -- dB Error Vector Magnitude (Pout = 3 W Avg. including 0.6% rms source EVM) EVM -- 1.5 -- % Spectral Regrowth at 400 kHz Offset (Pout = 3 W Avg.) SR1 -- -65 -- dBc Spectral Regrowth at 600 kHz Offset (Pout = 3 W Avg.) SR2 -- -83 -- dBc MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MW4IC915MBR1 MW4IC915GMBR1 6-45 % ,-) F ,') " G # $ G" G " G 6+6;743;6 2+60174820 G 0.086, 50 W Microstrip 0.133 x 0.236 Microstrip 0.435 x 0.283 Microstrip 0.171 x 0.283 Microstrip 0.429 x 0.283 Microstrip Z6 Z7 Z8 Z9 PCB F G G " " F ,')" " ,-)" F G$ G# " F $ Z1 Z2 Z3 Z4 Z5 # 0.157 x 0.283 Microstrip 0.429 x 0.283 Microstrip 0.394 x 0.088 Microstrip 0.181 x 0.088 Microstrip Taconic TLX8, 0.030, r = 2.55 Figure 1. Two-Tone 860-960 MHz Test Fixture Schematic Table 1. Two-Tone 860-960 MHz Test Fixture Component Designations and Values Designators Description C1, C6, C9, C14 22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R C2, C5, C8, C11 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X C3, C4, C7, C10, C16 22 pF Chip Capacitors, B Case, ATC #100B220JCA500X C12, C13 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X C15 10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 R1, R2 10 k, 1/4 W Chip Resistor (1206) L1 12.5 nH Inductor M1, M2, M3, M4 0.283, 90_ Mitered Microstrip Bends MW4IC915MBR1 MW4IC915GMBR1 6-46 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ,-) " MW4IC915MB Rev 0 ,-)" % " # ,') $ ,')" " Figure 2. Two-Tone 860-960 MHz Test Fixture Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MW4IC915MBR1 MW4IC915GMBR1 6-47 ,-) F 1 F # $ 16 2 NC 3 NC NC 15 4 5 NC G G" 6 G G " G 14 G G# 7 NC 6+6;743;6 2+60174820 8 9 10 NC NC 11 12 ,') " # " 13 F " # 0.681 x 0.039, 50 W Microstrip 0.157 x 0.228 Microstrip 0.468 x 0.157 Microstrip 0.220 x 0.157 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 0.566 x 0.043 Microstrip 0.165 x 0.043 Microstrip 0.078 x 0.043 Microstrip Taconic RF35, 0.02, r = 3.5 Figure 3. 860-960 MHz Reference Board Schematic Table 2. 860-960 MHz Reference Board Component Designations and Values Designators Description C1, C15 10 pF Chip Capacitors (0805), ACCU-P AVX #08051J100GBT C2 5.6 pF Chip Capacitor (0805), ACCU-P AVX #08051J5R6BBT C3, C4, C9, C11, C13 33 pF Chip Capacitors (0805), ACCU-P AVX #08051J330GB C5, C10, C12, C14 10 nF Chip Capacitors (0805), AVX #08055C103KAT C6, C7, C8 22 mF, 35 V Tantalum Capacitors, AVX #TAJE226M035R C16, C17 100 nF Chip Capacitors (0805), AVX #08055C104KAT P1, P2 5 k Potentiometer CMS Cermet Multi-turn, Bourns #3224W R1, R2, R3, R4, R5 0 , 1/8 W Chip Resistors (0805) R6, R7 10 k, 1/4 W Chip Resistors (1206) MW4IC915MBR1 MW4IC915GMBR1 6-48 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA '- ,-- # $ " " # # MW4IC915MB Rev 0 " " ,'' '- Figure 4. 860-960 MHz Reference Board Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MW4IC915MBR1 MW4IC915GMBR1 6-49 " '+1 % " " " - " "" " ,-- . " ,/ 234 . & - . $ ! -" . " ! <2206 6713;6604 5 206 )+7/809 " $ $" $ #" $ % %)) --%!-) / -! : ' +1 &'! TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM) '+1 # " " % " " "" - " ,-- . " ,/ 234 . & - . $ ! -" . " ! <2206 6713;6604 5 206 )+7/809 " $ " $ $" # $ $ " - -%!-) / " %%)) --%!-) -! : ' +1 &'! Figure 5. Two-Tone Wideband Circuit Performance ; ;6; 4= ;6; #4= ;6; # ,-- . " ,/ - . $ ! -" . " ! . $ 5 206 )+7/809 $ * 234 & &!) !>9* Figure 6. Two-Tone Wideband Circuit Performance Figure 7. Intermodulation Distortion Products versus Output Power TYPICAL CHARACTERISTICS (MOTOROLA REFERENCE BOARD) ' +1 &'! , . " ,/ -- . ! -" . " ! " . $ _ " " _ "$ " "# * _ "_ "_ ' +1 &'! . _ -! : . _ " ,-- . " ,/ 234 . & & - . ! -" . " ! "_ _ "$ " # $ $ $ $" $ $ $ 234 & &!) Figure 8. Power Gain and Efficiency versus Output Power Figure 9. Power Gain versus Frequency MW4IC915MBR1 MW4IC915GMBR1 6-50 $ MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS (MOTOROLA REFERENCE BOARD) - CONTINUED " ' +1 &'! ,-- . " ,/ 234 . - . ! -" . " ! " !&!--- : . _ "_ "$ _ * $ $ $ $" $ $ $ _ ,-- . " ,/ 234 . & & - . ! -" . " ! # $ $ $ $" $ $ $ Figure 10. Power Gain versus Frequency Figure 11. Power Added Efficiency versus Frequency ,-- . " ,/ - . ! -" . " ! -' 23E74820 . $ "_ _ . _ " * * . _ _ # ,-- . " ,/ - . ! -" . " ! -' 23E74820 . $ # * 234 & &!) !,'* 234 & &!) Figure 12. Error Vector Magnitude versus Output Power Figure 13. Spectral Regrowth at 400 kHz versus Output Power # #" # $ "_ * "_ "* . _ $ # $ )!%'&@5 / # )!%'&@5 / ,,!'- :;1 " " ,-- . " ,/ - . ! -" . " ! -' 23E74820 . $ # . _ # _ "_ " * 234 & &!) Figure 14. Spectral Regrowth at 600 kHz versus Output Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MW4IC915MBR1 MW4IC915GMBR1 6-51 G2 . GE27H . $ . $ ,-- . " , - . ! -" . " ! 234 . f MHz Zload 900 3.23 - j4.30 910 3.24 - j4.36 920 3.25 - j4.42 930 3.25 - j4.47 940 3.23 - j4.52 950 3.21 - j4.56 960 3.16 - j4.60 970 3.11 - j4.65 980 3.04 - j4.70 Zload = Test circuit impedance as measured from drain to ground. 34+34 74/=809 64<2;5 -6>8/6 06; 614 Figure 15. Series Equivalent Output Impedance MW4IC915MBR1 MW4IC915GMBR1 6-52 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line '()( *+ /'" /'"! The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. * Typical CDMA Performance: 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, 2-Carrier N-CDMA, IS -95, 869-894 MHz, 1.2288 MHz Channel Bandwidth, IM3 Measured in 1.2288 Integrated Bandwidth, ACPR Measured in 30 kHz Integrated Bandwidth, 2.5 MHz Carrier Spacing Output Power -- 5 Watts (Avg.) Power Gain -- 31 dB Efficiency -- 21% Adjacent Channel Power -- -52 dBc IRL -- -14 dB * Typical Performance @ P1dB: 921-960 MHz, 26 Volts Output Power -- 30 Watts P1dB Power Gain -- 30 dB Efficiency -- 45% * On Chip Matching (50 Ohm Input, >4 Ohm Output) * Integrated Temperature Compensation Capability * Integrated ESD Protection * Usable for SCPA and MCPA Architecture * Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 30 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA * Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance * Also Available in Gull Wing for Surface Mount * Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. N-CDMA, W-CDMA, GSM/GSM EDGE, 746 - 960 MHz, 30 W, 26-28 V RF LDMOS INTEGRATED POWER AMPLIFIERS CASE 1329-08 TO-272 WIDE BODY MULTI-LEAD PLASTIC MWIC930R1 CASE 1329A-02 TO-272 WIDE BODY MULTI-LEAD GULL WING PLASTIC MWIC930GR1 PIN CONNECTIONS ,-) 80 ,') ,')" 234(,-)" 6+6;743;6 2+60174820 Functional Block Diagram ' ,-) " ' 80 ,') ,')" '- # $ 234 ( ,-)" " '- (Top View) REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MWIC930R1 MWIC930GR1 6-53 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ 175 C Symbol Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case C/W RJC GSM Application (Pout = 30 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 1.22 GSM EDGE Application (Pout = 15 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 1.39 CDMA Application (Pout = 5 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 1.50 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22-A113 3 ELECTRICAL CHARACTERISTICS (TC = 25C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola CDMA Test Fixture, 50 ohm system) 1-Carrier N-CDMA, 869-894 MHz, IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 through 13. Common-Source Amplifier Power Gain (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 869-894 MHz) Gps 28 31 -- dB Drain Efficiency (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 869-894 MHz) 18 21 -- % Adjacent Channel Power Ratio (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 869-894 MHz) ACPR -- -52 -48 dBc Input Return Loss (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 880 MHz) IRL -- -12 -9 dB (continued) MWIC930R1 MWIC930GR1 6-54 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25C, unless otherwise noted) Min Typ Max Unit IQT -- 5 -- % Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW (Characterize from 840-920 MHz) GF -- 0.3 -- dB Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW (Characterize from 840-920 MHz) -- 0.6 -- Delay -- 3 -- ns -- 15 -- Characteristic Symbol PERFORMANCE TESTS (In Motorola Test Fixture) VDS = 26 V, IDQ1 = 90 mA, IDQ2 = 240 mA Quiescent Current Accuracy over Temperature (-10 to 85C) at Nominal Value Delay @ Pout = 5 W CW Insertion Phase Window @ Pout = 5 W CW GSM/GSM EDGE FUNCTIONAL TESTS (In Motorola GSM Test Fixture) VDS = 27 V, IDQ1 = 90 mA, IDQ2 = 240 mA, 921-960 MHz, CW Output Power at 1dB Compression Point P1dB -- 30 -- Watts Gps -- 30 -- dB -- 45 -- % IRL -- -12 -- dB IMD3 -- -30 -- dBc IMD3 backoff -- -45 -- dBc Gain Flatness 921-960 MHz @ Pout = 5 W CW GF -- 0.3 -- dB Deviation from Linear Phase 921-960 MHz @ Pout = 5 W CW -- 0.6 -- Common-Source Amplifier Power Gain @ P1dB Drain Efficiency @ P1dB Input Return Loss @ P1dB Third Order Intermodulation Distortion (15 W, 2-Tone 100 kHz Spacing) Third Order Intermodulation Distortion (1 W, 2-Tone 100 kHz Tone Spacing) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MWIC930R1 MWIC930GR1 6-55 ,- " $ G G# " G ,' # ,'" " Z1 Z2 Z3 Z4 # $ G" G G G " G 6+6;743;6 2+60174820 ,-" " G$ 0.0438 x 0.970 50 Microstrip (not including lead pad) 0.234 x 0.1183 Microstrip (including lead pad) 0.1575 x 0.0938 Microstrip 0.08425 x 0.584 Microstrip Z5 Z6 Z7 Z8 Z9 PCB 0.0438 x 0.2009 Microstrip 0.0504 x 0.528 Microstrip 0.0504 x 0.150 Microstrip 0.0254 x 0.880 Microstrip 0.0254 x 0.250 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 1. 746-960 MHz Test Fixture Schematic Table 1. 746-960 MHz Test Fixture Component Designations and Values Part Description Value, P/N or DWG Manufacturer *C1 15 pF High Q Capacitor ATC600S150JW ATC *C2 6.8 pF High Q Capacitor - GSM Fixture 8.2 pF High Q Capacitor - CDMA Fixture ATC600S6R8CW ATC600S8R2CW ATC *C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC *C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC C6, C13, C14, C15 1 F Chip Capacitors GRM42-2X7R105K050AL Murata C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet R1, R2 1 kW, 1/8 W Chip Resistors RM73B2AT102J KOA Speer R3, R4 1 MW, 1/4 W Chip Resistors RM73B2BT105J KOA Speer * For output matching and bypass purposes, it is strongly recommended to use these exact capacitors. MWIC930R1 MWIC930GR1 6-56 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ,- MWIC930 Rev 0 ,-" " 0+34 $ # 34+34 " ,' " ,'" Figure 2. 746-960 MHz Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MWIC930R1 MWIC930GR1 6-57 " ,-- . "# ,/ 234 . & !>9* - . $ ! -" . " ! . <2206 . & " ; ;6; 4= ;6; #4= ;6; * _ "$ ,-- . "# ,/ - . $ ! -" . " ! . " " )!' 234 & &!) Figure 3. Two-Tone Broadband Performance Figure 4. Power Gain versus Output Power ' +1 &'! 80 . " " $ " " " " " ,-- . "# ,/ 234 . & & - . $ ! -" . " ! " # # $ $ Figure 6. Power Gain versus Frequency . _ "_ " _ " _ " Figure 5. Power Gain versus Supply Voltage "" " "_ ,-- . "# ,/ - . $ ! -" . " ! . " . _ " ,-- )% ,%!' ,%) "" " - . $ ! -" . " ! . "" " " !!-?!!%&! / ' +1 &'! % %)) "# "_ " " " " . _ ' +1 &'! - -%!-) / TYPICAL CHARACTERISTICS ,-- . "# ,/ - . $ ! -" . " ! . $=7006E )$ -! " . _ "_ _ " " # $ 234 & &!) 234 & &!) Figure 7. Input Return Loss versus Output Power Figure 8. Adjacent Channel Power Ratio versus Output Power MWIC930R1 MWIC930GR1 6-58 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS . _ "_ _ " ,-- . "# ,/ - . $ ! -" . " ! . " " " !&!--- : !&!--- : . _ "_ _ " ,-- . "# ,/ 234 . & & - . $ ! -" . " ! " # # $ $ 234 & &!) Figure 9. Power Added Efficiency versus Output Power Figure 10. Power Added Efficiency versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MWIC930R1 MWIC930GR1 6-59 G2 . GE27 . $ . # 1 . # G80 . $ ,-- . "# ,/ - . $ ! -" . " ! 234 . & !>9* f MHz Zload Zin 740 26.61 - j3.68 4.28 + j2.99 760 26.88 - j0.53 4.37 + j2.91 780 28.22 + j2.21 4.39 + j2.79 800 30.57 + j4.31 4.34 + j2.64 820 33.79 + j5.53 4.21 + j2.54 840 37.83 + j5.30 4.06 + j2.52 860 41.92 + j3.42 3.90 + j2.58 880 45.58 - j0.40 3.73 + j2.70 900 47.77 - j5.84 3.59 + j2.93 920 47.83 - j12.15 3.43 + j3.17 940 45.55 - j18.05 3.28 + j3.44 960 41.58 - j22.64 3.13 + j3.75 Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. 34+34 74/=809 64<2;5 -6>8/6 06; 614 Figure 11. Series Equivalent Input and Output Impedance MWIC930R1 MWIC930GR1 6-60 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line ! * * /.1 Features * * * * * 34.5 dB Typical Gain @ 100 MHz Silicon Bipolar Technology Class A Operation Typical ITO = +44 dBm @ 200 MHz Unconditionally Stable Under All Load Conditions 10-200 MHz 34.5 dB 800 mW GENERAL PURPOSE LINEAR AMPLIFIER MODULE Applications * Driver Amplifier in 50 Ohm Systems Requiring High Linearity * Instrumentation Amplifiers * Return Path Amplifier on CATV Systems Operating in the 10 to 200 MHz Frequency Range * Possible Replacement for CA2830C Description * 24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module CASE 1302-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage VCC 28 Vdc RF Power Input Pin +5 dBm Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (TC = 25C, VCC = 24 V, 50 system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 10 -- 200 MHz Gain Flatness (f = 10-200 MHz) GF -- 0.5 1 dB Power Gain (f = 100 MHz) Gp 33.5 34.5 35.5 dB Noise Figure, Broadband (f = 200 MHz) NF -- 3.8 4.5 dB Power Output -- 1 dB Compression (f = 10-200 MHz) P1dB 630 800 -- mW Power Output -- 1 dB Compression (f = 10-200 MHz, VCC = 28 V) P1dB 1000 1260 -- mW Third Order Intercept (See Figure 2, f1 = 200 MHz) ITO 43 44 -- dBm VSWR -- 1.5:1 2:1 -- Second Harmonic Distortion (Tone at 100 mW, f2H = 150 MHz) dso -- -60 -50 dB Peak Envelope Power (Two Tone Distortion Test -- See Figure 2) (f = 10-200 MHz @ -32 dB IMD) PEP 600 800 -- mW Supply Current ICC 270 310 330 mA Input/Output VSWR (f = 10-200 MHz) REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW1345 6-61 Biased at 24 Volts T = 25C Zo = 50 S11 S21 S12 S22 Frequency (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 10 -19.3 45.5 34.6 -0.6 -47.0 2.3 -14.5 76.8 50 -15.6 35.0 34.2 -56.7 -47.5 -30.3 -12.6 45.0 100 -13.2 34.4 33.9 -114 -47.9 -62.9 -10.8 10.7 200 -11.1 30.1 33.5 134 -48.3 -128 -14.9 -42.6 Magnitude in dB, Phase Angle in degrees. Table 1. S-Parameters '! " # $ * , Figure 12. External Connections MHW1345 6-62 " " "J + ) -K @K- u " . B @ - . " Figure 13. Intermodulation Test MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Seven Motorola RF CATV Distribution Amplifier Modules - Data Sheets Device Number Page Number Device Number Page Number MHW1223LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-3 MHW8185L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-44 MHW1224LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-5 MHW8202B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-46 MHW1244 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-7 MHW8205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-48 MHW1253LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-9 MHW8205L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-50 MHW1254L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-11 MHW8222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-52 MHW1254LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-12 MHW8242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-54 MHW1303LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-14 MHW8272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-55 MHW1304LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-16 MHW9146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-56 MHW1353LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-18 MHW9182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-58 MHW1354LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-20 MHW9186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-59 MHW6342T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-22 MHW9187 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-61 MHW7182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-24 MHW9188 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-63 MHW7185C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-26 MHW9189 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-65 MHW7185CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-28 MHW9206 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-67 MHW7205C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-30 MHW9227 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-69 MHW7205CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-32 MHW9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-71 MHW7222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-34 MHW9242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-73 MHW7242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-36 MHW9247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-75 MHW7272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-38 MHW9267 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-77 MHW7292A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-39 MHW9276 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-79 MHW8182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-40 MMG1001R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-81 MHW8185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-42 MMG2001R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-86 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 7-1 7-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-200 MHz, 22.7 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 200 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-, Mid- and High-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 200 MHz Power Gain (f = 5 MHz) Gp 22.1 22.7 23.5 dB Slope (5-200 MHz) S - 0.2 -- 0.7 dB Gain Flatness (Peak To Valley) (5-200 MHz) GF -- -- 0.4 dB 20 18 -- -- -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-150 MHz) (@ f = 150-200 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 72 - 68 - 65 REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW1223LA 7-3 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -69 -63 -65 -60 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1223LA 7-4 -- -- -78 -69 -75 -66 -- 6.3 7 85 95 110 NF (f = 5-200 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-65 MHz, 22.7 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 65 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 65 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 22.1 22.7 23.2 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) GF -- -- 0.4 dB 20 -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 72 - 68 - 65 REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW1224LA 7-5 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -69 -63 -65 -60 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1224LA 7-6 -- -- -78 -69 -75 -66 -- 6.3 7 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 12-, 22- and 26-Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-200 MHz, 24.0 dB 26-CHANNEL CATV HIGH-SPLIT REVERSE AMPLIFIER Applications * CATV Systems Operating in the 5 to 200 MHz Frequency Range * Designed for Broadband Applications Requiring Low Distortion Characteristics * Specified for Use as a Return Path Amplifier for Low-, Mid- and High-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +65 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 W system) Symbol MHW1244 Units Power Gain @ 10 MHz Gp 24.0 0.5 dB Frequency Range (Response/Return Loss) (1) BW 5.0-200 MHz Characteristic Cable Slope Equivalent (5.0-200 MHz) Gain Flatness (5.0-200 MHz) Input/Output Return Loss (5.0-200 MHz) (1) Cross Modulation Distortion @ +50 dBmV per ch. 12-Channel FLAT (5.0-120 MHz) 22-Channel FLAT (5.0-175 MHz) (2) (3) 26-Channel FLAT (5.0-200 MHz) S -0.2 Min/+0.8 Max dB GF 0.2 Max dB IRL/ORL 18.0 Min dB XMD12 XMD22 XMD26 -66 Typ -61 Max -61 Typ dBc dBc dBc NOTES: 1. Response and return loss characteristics are tested and guaranteed for the full 5.0-200 MHz frequency range. 2. Motorola 100% distortion and noise figure testing is performed over the 5.0-175 MHz frequency range. Cross modulation and composite triple beat testing are with 22-channel loading; Video carriers used are: T7-T13 7.0-43.0 MHz 7-Channels 2-6 55.25-83.25 MHz 5-Channels A-7 121.25-175.25 MHz 10-Channels 3. Video carriers used for 12-Channel typical performances are T7-6; For 26-Channel typical performance, Channels 8, 9, 10 and 11 are added to the 22-Channel carriers listed above. REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW1244 7-7 ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 W system) Characteristic Symbol MHW1244 Units CTB22 CTB26 -68 Max -67.5 Typ dBc dBc TB3 TB3 -87 Typ -84 Typ dBc dBc Second Order Distortion @ +50 dBmV per ch. High-Split (5.0-175 MHz) CH2, CHA @ 176.5 MHz IMD -72 Max dBc Noise Figure High-Split (5.0-175 MHz) (2) NF 5.0 Max dB DC Current IDC 210 Typ/240 Max mAdc Composite Triple Beat Distortion @ +50 dBmV per ch. 22-Channel FLAT (5.0-175 MHz) (2) 26-Channel FLAT (5.0-200 MHz) (3) Individual Triple Beat Distortion @ +50 dBmV per ch. Mid-Split (5.0-120 MHz) T11, T12 and CH2 @ 123.25 MHz High-Split (5.0-175 MHz) T13, CH2 and CH5 @ 175.5 MHz NOTES: 1. Response and return loss characteristics are tested and guaranteed for the full 5.0-200 MHz frequency range. 2. Motorola 100% distortion and noise figure testing is performed over the 5.0-175 MHz frequency range. Cross modulation and composite triple beat testing are with 22-channel loading; Video carriers used are: T7-T13 7.0-43.0 MHz 7-Channels 2-6 55.25-83.25 MHz 5-Channels A-7 121.25-175.25 MHz 10-Channels 3. Video carriers used for 12-Channel typical performances are T7-6; For 26-Channel typical performance, Channels 8, 9, 10 and 11 are added to the 22-Channel carriers listed above. MHW1244 7-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-200 MHz, 25.5 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 200 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-, Mid- and High-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 200 MHz Power Gain (f = 5 MHz) Gp 25 25.5 26 dB Slope (5-200 MHz) S - 0.2 -- 0.7 dB Gain Flatness (Peak To Valley) (5-200 MHz) GF -- -- 0.4 dB 20 18 -- -- -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-150 MHz) (@ f = 150-200 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 71 - 68 - 66 REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW1253LA 7-9 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -69 -64 -65 -61 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1253LA 7-10 -- -- -78 -69 -75 -66 -- 5.8 6.5 85 95 110 NF (f = 5-200 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * Specified for 4-Channel Loading * Superior Gain, Return Loss and DC Current Stability over Temperature * Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 50 MHz, 25 dB 4-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 50 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 50 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) VIN +70 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 ohm system, unless otherwise noted) Characteristic Symbol Bandwidth Min Max Unit BW 5.0 50 MHz Power Gain (f = 5.0 MHz) Gp 24.3 25.8 dB Return Loss (@ f = 5.0-50 MHz) RL 20 -- dB Second Order Distortion (Vout = +50 dBmV/ch) IMD -- -70 dBc Cross Modulation (Vout = +50 dBmV/ch) XMD4 -- -62 dBc Triple Beat Distortion (Vout = +50 dBmV/ch) TB3 -- -70 dBc Noise Figure (f = 50 MHz) NF -- 4.5 dB IDC 100 135 mA DC Current REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW1254L 7-11 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-65 MHz, 25.5 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 65 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 65 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 25 25.5 26 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) GF -- -- 0.4 dB 20 -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 71 - 68 - 66 REV 2 MHW1254LA 7-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -69 -64 -65 -61 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -- -- -78 -69 -75 -66 -- 5.8 6.5 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MHW1254LA 7-13 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-200 MHz, 30.8 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 200 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-, Mid- and High-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 200 MHz Power Gain (f = 5 MHz) Gp 30 30.8 31.2 dB Slope (5-200 MHz) S 0 -- 1.0 dB Gain Flatness (Peak To Valley) (5-200 MHz) GF -- -- 0.7 dB 20 18 -- -- -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) (@ f = 65-200 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 70 - 68 - 65 REV 1 MHW1303LA 7-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -67 -61 -64 -58 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -- -- -76 -67 -74 -64 -- 5 5.7 85 95 110 NF (f = 5-200 MHz) DC Current Unit IDC dB mA MHW1303LA 7-15 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-65 MHz, 30.8 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 65 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 65 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 30 30.8 31.2 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) GF -- -- 0.5 dB 20 -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 70 - 68 - 65 REV 2 MHW1304LA 7-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -67 -61 -64 -58 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -- -- -76 -67 -74 -64 -- 5 5.7 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MHW1304LA 7-17 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-150 MHz, 35.2 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 150 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-, Mid- and High-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 150 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 150 MHz Power Gain (f = 5 MHz) Gp 34.5 35.2 35.7 dB Slope (5-150 MHz) S 0 -- 1 dB Gain Flatness (Peak To Valley) (5-150 MHz) GF -- -- 0.7 dB 20 18 -- -- -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) (@ f = 65-150 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 69 - 68 - 65 REV 1 MHW1353LA 7-18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -66 -60 -63 -57 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -- -- -75 -65 -73 -62 -- 4.4 5.4 85 95 110 NF (f = 5-150 MHz) DC Current Unit IDC dB mA MHW1353LA 7-19 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 6- and 10-Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions 5-65 MHz, 35.2 dB 10-CHANNEL CATV LOW CURRENT AMPLIFIER Applications * CATV Systems Operating in the 5 to 65 MHz Frequency Range * Specified for Use as a Return Path Amplifier for Low-Split 2-Way Cable TV Systems Description * 24 Vdc Supply, 5 to 65 MHz, CATV Reverse Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 34.5 35.2 35.7 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) GF -- -- 0.5 dB 20 -- -- Characteristic Bandwidth Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 69 - 68 - 65 REV 3 MHW1354LA 7-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- -66 -60 -63 -57 Composite Triple Beat (Vout = +50 dBmV per Ch., Worst Case) dBc 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA -- -- -75 -65 -73 -62 -- 4.4 5.4 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MHW1354LA 7-21 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * Specified for 77-Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 550 MHz 35.2 dB GAIN 77-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 550 MHz Frequency Range * Single Module High Gain Line Amplifier in Cable TV Distribution System Description * 24 Vdc Supply, 40 to 550 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 550 MHz Slope Gain Flatness (Peak To Valley) Return Loss -- Input/Output (Zo = 75 Ohms) 40-550 MHz 450-550 MHz Second Order Intermodulation Distortion (Vout = +46 dBmV per ch., Ch 2, M13, M22) (Vout = +44 dBmV per ch., Ch 2, M30, M39) Cross Modulation Distortion (Vout = +46 dBmV per ch.) (Vout = +44 dBmV per ch.) Symbol Min Typ Max Unit BW 40 -- 550 MHz Gp 33.5 34.5 34.5 35.2 35.5 -- dB S 0 0.7 2 dB GF -- 0.3 0.8 dB IRL/ORL 18 16 -- -- -- -- dB -- -- -80 -74 -- -- -- -- -62 -63 -- -57 IMD dBc dBc 60-Channel FLAT 77-Channel FLAT XMD60 XMD77 REV 4 MHW6342T 7-22 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +46 dBmV per ch.) (Vout = +44 dBmV per ch.) DC Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Min Typ Max Unit CTB60 CTB77 -- -- -64 -63 -- -57 CSO60 CSO77 -- -- -70 -65 -- -57 NF -- 5.5 6.5 dB IDC -- 310 340 mA dBc 60-Channel FLAT 77-Channel FLAT Composite Second Order (Vout = +46 dBmV/ch, 60-Channel FLAT) (Vout = +44 dBmV/ch, 77-Channel FLAT) Noise Figure Symbol 550 MHz dBc MHW6342T 7-23 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77- and 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 19 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40-750 MHz Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 18 18.2 18.5 19 19 20 dB S 0 0.4 1 dB GF -- 0.3 0.6 dB 20 -- -- -- -- 0.005 dB dB/MHz -- -- -70 -70 -63 -64 IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 REV 2 MHW7182B 7-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -66 -61 -64 -59 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -68 -66 -66 -64 NF -- -- -- 4.0 4.5 5.0 5.0 -- 6.5 dB IDC 180 220 240 mA dBc dBc 50 MHz 550 MHz 750 MHz MHW7182B 7-25 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77- and 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 19.4 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 750 MHz Power Gain 50 MHz 750 MHz Gp 18.3 19 18.8 19.4 19.3 20 dB Slope 40-750 MHz S 0 0.4 1.0 dB GF -- 0.3 0.6 dB 19 -- -- -- -- 0.006 dB dB/MHz Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -72 -80 -64 -68 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -66 -70 -63 -68 dBc REV 7 MHW7185C 7-26 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit CTB110 CTB77 -- -- -64 -71 -62 -69 NF -- -- -- 5.0 5.8 6.2 6.0 -- 7.5 dB IDC 365 400 435 mA dBc 110-Channel FLAT 77-Channel FLAT 50 MHz 550 MHz 750 MHz MHW7185C 7-27 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * * Specified for 77- and 110-Channel Loading Lower DC Current Requirements Excellent Distortion Performance Excellent DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 19.2 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Amplifier Requiring Lower Power Dissipation While Maintaining Excellent Output Performance Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 750 MHz Power Gain 50 MHz 750 MHz Gp 18 18.7 18.5 19.2 19 19.7 dB Slope 40-750 MHz S 0.3 0.6 1.3 dB GF -- 0.3 0.6 dB 20 -- -- -- -- 0.007 dB dB/MHz Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -70 -83 -64 -68 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -66 -69 -63 -67 dBc REV 2 MHW7185CL 7-28 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) Noise Figure Min Typ Max Unit CTB110 CTB77 -- -- -63.5 -70 -61 -68 NF -- -- -- 5.3 5.8 6.5 6.2 -- 7.5 dB IDC 345 370 385 mA dBc 110-Channel FLAT 77-Channel FLAT 50 MHz 550 MHz 750 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol MHW7185CL 7-29 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77- and 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 20.2 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40-750 MHz Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 19.3 20 19.8 20.2 20.3 21 dB S 0 0.4 1.0 dB GF -- 0.3 0.6 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -70 -80 -63 -68 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -67 -70 -62 -68 dBc REV 7 MHW7205C 7-30 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit CTB110 CTB77 -- -- -63 -71 -61 -69 NF -- -- -- 5.0 5.8 6.2 6.0 -- 7.5 dB IDC 365 400 435 mA dBc 110-Channel FLAT 77-Channel FLAT 50 MHz 550 MHz 750 MHz MHW7205C 7-31 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * * Specified for 77- and 110-Channel Loading Lower DC Current Requirements Excellent Distortion Performance Excellent DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 20 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Amplifier Requiring Lower Power Dissipation While Maintaining Excellent Output Performance Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 750 MHz Power Gain 50 MHz 750 MHz Gp 19 19.7 19.5 20 20 21.2 dB Slope 40-750 MHz S 0.2 0.5 1.7 dB GF -- 0.3 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -69 -80 -63 -67 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -65 -69 -62 -66 dBc REV 2 MHW7205CL 7-32 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) Noise Figure Min Typ Max Unit CTB110 CTB77 -- -- -63 -70 -61 -68 NF -- -- -- 5.0 5.8 6.2 6.2 -- 7.5 dB IDC 345 365 385 mA dBc 110-Channel FLAT 77-Channel FLAT 50 MHz 550 MHz 750 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol MHW7205CL 7-33 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77- and 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 22.7 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) Vin +70 dBmV Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain f = 50 MHz f = 750 MHz Slope (f = 40-750 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz Composite Second Order (Vout = +40 dBmV/ch; 110 Channels) (Vout = +44 dBmV/ch; 77 Channels) (f = 40-750 MHz) Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 21.4 22.2 21.9 22.7 22.4 23.2 dB S 0.2 0.7 1.2 -- GF -- 0.4 0.6 -- IRL/ORL 20 25 -- dB RLD -- -- 0.006 dB/MHz CSO110 CSO77 -- -- -67 -67 -60 -60 dBc REV 3 MHW7222B 7-34 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +40 dBmV/ch, 110-Channel @ Fm = 55.25 MHz) (Vout = +44 dBmV/ch, 77-Channel @ Fm = 55.25 MHz) XMD110 XMD77 -- -- -63 -59 -60 -56 Composite Triple Beat (Vout = +40 dBmV/ch, 110-Channels, Worst Case) (Vout = +44 dBmV/ch, 77-Channels, Worst Case) CTB110 CTB77 -- -- -64 -65 -61 -62 NF -- -- 3.7 5 4.5 6.5 dB IDC 180 220 240 mA Noise Figure DC Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Unit dBc dBc f = 50 MHz f = 750 MHz MHW7222B 7-35 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77- and 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 24.7 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 750 MHz Power Gain 50 MHz 750 MHz Gp 23.2 24 24 24.7 24.8 26 dB Slope 40-750 MHz S 0 0.6 1.5 dB Gain Flatness (40-750 MHz, Peak To Valley) Return Loss -- Input/Output (Zo = 75 Ohms) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) GF -- 0.4 0.6 dB @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL 20 -- -- -- -- 0.007 dB dB/MHz 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -69 -78 -62 -- dBc REV 3 MHW7242A 7-36 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -63 -58 -61 -- Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -67 -64 -63 -- NF -- -- 4.8 5.5 5.5 7 dB IDC 280 318 350 mA Noise Figure DC Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dBc dBc 50 MHz 750 MHz MHW7242A 7-37 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 750 MHz 27.7 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 750 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 750 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 750 MHz Power Gain 50 MHz 750 MHz Gp 26.2 27 27.2 27.7 27.8 29 dB Slope 40-750 MHz S 0 0.7 1.5 dB GF -- 0.4 0.8 dB IRL/ORL 20 -- -- -- -- 0.007 dB dB/MHz CSO110 -- -70 -64 dBc XMD110 -- -63 -60 dBc CTB110 -- -68 -64 dBc NF -- -- -- 5.5 5.5 6.5 dB IDC 280 310 350 mA Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) 110-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) 110-Channel FLAT Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) 110-Channel FLAT Noise Figure DC Current (VDC = 24 V, TC = 30C) 50 MHz 750 MHz REV 1 MHW7272A 7-38 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 110-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 770 MHz, 29.8 dB GAIN 110-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 770 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 770 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 770 MHz Power Gain 50 MHz 770 MHz Gp 28.2 29 29 29.8 29.8 31 dB Slope 40-770 MHz S 0 0.7 2 dB GF -- 0.4 0.8 dB IRL/ORL 20 -- -- -- -- 0.007 dB dB/MHz CSO110 -- -70 -60 dBc XMD110 -- -62 -60 dBc CTB110 -- -62 -60 dBc NF -- -- -- 5.5 5.5 6.5 dB IDC 280 310 350 mA Gain Flatness (40-750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) 110-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) 110-Channel FLAT Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) 110-Channel FLAT Noise Figure DC Current (VDC = 24 V, TC = 30C) 50 MHz 770 MHz REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW7292A 7-39 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * Specified for 77-, 110- and 128-Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 860 MHz 19.1 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 860 MHz Power Gain 50 MHz 860 MHz Gp 18 18.2 18.5 19.1 19 20.5 dB Slope 40-860 MHz S 0 0.7 2.5 dB GF -- 0.3 0.6 dB 20 -- -- -- -- 0.005 dB dB/MHz -- -- -- -71 -70 -70 -64 -63 -64 Gain Flatness (40-860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +38 dBmV/ch., Worst Case) (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 REV 2 MHW8182B 7-40 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +38 dBmV/ch., FM = 55 MHz) (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +38 dBmV/ch., Worst Case) (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -68 -66 -61 -65 -64 -59 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -69 -68 -66 -66 -66 -64 NF -- -- -- -- 4.0 4.5 5.0 5.5 5.0 -- 6.5 7.5 dB IDC 180 220 240 mA dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz MHW8182B 7-41 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77-, 110- and 128-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 860 MHz 19.4 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40-860 MHz Gain Flatness (40-860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 18.3 19 18.8 19.4 19.3 20.5 dB S 0 .5 1.5 dB GF -- 0.3 1.0 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -70 -72 -80 -62 -64 -68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -67 -70 -64 -63 -68 dBc REV 6 MHW8185 7-42 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit CTB128 CTB110 CTB77 -- -- -- -67 -64 -71 -64 -62 -69 NF -- -- -- -- 5.0 5.8 6.2 7.0 6.0 -- -- 8.0 dB IDC 365 400 435 mA dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT 50 MHz 550 MHz 750 MHz 860 MHz MHW8185 7-43 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * * Specified for 77-, 110- and 128-Channel Loading Lower DC Current Requirements Excellent Distortion Performance Excellent DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 19.4 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Amplifiers Requiring Lower Power Dissipation While Maintaining Excellent Output Performance Description * 24 Vdc Supply, 40 to 870 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 50 MHz 870 MHz Gp 18 19 18.5 19.4 19 20.5 dB Slope 40-870 MHz S 0.4 0.9 1.4 dB GF -- 0.3 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz -- -- -- -69 -70 -85 -62 -64 -68 Gain Flatness (40-870 MHz, Peak-to-Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 REV 2 MHW8185L 7-44 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure Symbol Min Typ Max 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -66 -69 -64 -63 -67 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -70 -63 -61 -68 NF -- -- -- -- 5.3 5.8 6.6 7.8 6.2 -- -- 8.5 dB IDC 345 365 385 mA dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Unit MHW8185L 7-45 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77-, 110- and 128-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 20.9 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit DC Supply Voltage Rating VCC +28 Vdc RF Input Voltage (Single Tone) Vin +70 dBmV Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain f = 50 MHz f = 870 MHz Slope (f = 40-870 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz Composite Second Order (Vout = +38 dBmV/ch; 128-Channels, Worst Case) (Vout = +40 dBmV/ch; 110-Channels, Worst Case) (Vout = +44 dBmV/ch; 77-Channels, Worst Case) (f = 40-870 MHz) Symbol Min Typ Max Unit BW 40 -- 870 MHz Gp 19.8 20.3 20.4 20.9 20.8 21.8 dB S -- 0.5 1.2 dB GF -- 0.4 0.6 dB IRL/ORL 20 21 -- dB RLD -- -- 0.005 dB/MHz CSO128 CSO110 CSO77 -- -- -- -71 -70 -75 -66 -65 -70 dBc REV 1 MHW8202B 7-46 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +38 dBmV/ch, 128-Channels, Worst Case) (Vout = +40 dBmV/ch, 110-Channels, Worst Case) (Vout = +44 dBmV/ch, 77-Channels, Worst Case) XMD128 XMD110 XMD77 -- -- -- -67 -65 -58 -62 -61 -57 Composite Triple Beat (Vout = +38 dBmV/ch, 128-Channels, Worst Case) (Vout = +40 dBmV/ch, 110-Channels, Worst Case) (Vout = +44 dBmV/ch, 77-Channels, Worst Case) CTB128 CTB110 CTB77 -- -- -- -67 -66 -65 -63 -63 -63 NF -- -- -- 3.8 5.0 5.6 5.0 6.5 7.0 dB IDC 180 220 240 mA Noise Figure DC Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Unit dBc dBc f = 50 MHz f = 750 MHz f = 870 MHz MHW8202B 7-47 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77-, 110- and 128-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 860 MHz 20.2 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 860 MHz Power Gain 50 MHz 860 MHz Gp 19.3 20 19.8 20.2 20.3 21.5 dB Slope 40-860 MHz S 0 .4 1.5 dB GF -- 0.3 1.0 dB 19 -- -- -- -- 0.006 dB dB/MHz -- -- -- -69 -70 -80 -60 -63 -68 Gain Flatness (40-860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 REV 6 MHW8205 7-48 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Symbol Min Typ Max Unit 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -67 -71 -64 -62 -68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -71 -63 -61 -69 NF -- -- -- -- 5.0 5.8 6.2 7.0 6.0 -- -- 8.0 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz MHW8205 7-49 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * * Specified for 77-, 110- and 128-Channel Loading Lower DC Current Requirements Excellent Distortion Performance Excellent DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 20.4 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Amplifiers Requiring Lower Power Dissipation While Maintaining Excellent Output Performance Description * 24 Vdc Supply, 40 to 870 MHz, CATV Forward Power Doubler Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 50 MHz 870 MHz Gp 19 19.8 19.5 20.4 20 21.3 dB Slope 40-870 MHz S 0.2 0.8 1.7 dB GF -- 0.5 1.0 dB 20 -- -- -- -- 0.007 dB dB/MHz -- -- -- -69 -70 -80 -60 -63 -67 Gain Flatness (40-870 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 REV 2 MHW8205L 7-50 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure Symbol Min Typ Max 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -65 -69 -64 -62 -66 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -70 -63 -61 -68 NF -- -- -- -- 5.0 5.8 6.2 7.7 6.2 -- -- 8.5 dB IDC 345 365 385 mA dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = -20C to +100C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Unit MHW8205L 7-51 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77-, 110- and 128-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 860 MHz 22.7 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit DC Supply Voltage Rating VCC +28 Vdc RF Input Voltage (Single Tone) Vin +70 dBmV Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Symbol Characteristic Frequency Range Power Gain f = 50 MHz f = 860 MHz Slope (f = 40-860 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz Composite Second Order (Vout = +38 dBmV/ch; 128 Channels) (Vout = +40 dBmV/ch; 110 Channels) (Vout = +44 dBmV/ch; 77 Channels) (f = 40-860 MHz) Min Typ Max Unit BW 40 -- 860 MHz Gp 21.4 21.8 21.9 22.7 22.4 24 dB S 0.1 0.8 1.5 -- GF -- 0.4 0.6 -- IRL/ORL 20 24 -- dB RLD -- -- 0.009 dB/MHz CSO128 CSO110 CSO77 -- -- -- -68 -64 -65 -60 -61 -62 dBc REV 3 MHW8222B 7-52 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = +38 dBmV/ch, 128-Channel @ Fm = 55.25 MHz) (Vout = +40 dBmV/ch, 110-Channel @ Fm = 55.25 MHz) (Vout = +44 dBmV/ch, 77-Channel @ Fm = 55.25 MHz) XMD128 XMD110 XMD77 -- -- -- -65 -63 -59 -63 -60 -56 Composite Triple Beat (Vout = +38 dBmV/ch, 128-Channels, Worst Case) (Vout = +40 dBmV/ch, 110-Channels, Worst Case) (Vout = +44 dBmV/ch, 77-Channels, Worst Case) CTB128 CTB110 CTB77 -- -- -- -66 -64 -65 -64 -61 -62 NF -- -- -- 3.7 5 5.6 4.5 6.5 7 dB IDC 180 220 240 mA Noise Figure DC Current MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Unit dBc dBc f = 50 MHz f = 750 MHz f = 860 MHz MHW8222B 7-53 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 77- and 128-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 860 MHz 25 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Frequency Range Min Typ Max Unit BW 40 -- 860 MHz Power Gain 50 MHz 860 MHz Gp 23.2 24 24 25 24.8 26 dB Slope 40-860 MHz S 0 0.8 1.8 dB GF -- 0.4 0.8 dB @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL 20 -- -- -- -- 0.007 dB dB/MHz Composite Second Order (Vout = +38 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 128-Channel FLAT 77-Channel FLAT CSO128 CSO77 -- -- -69 -78 -62 -- Cross Modulation Distortion @ Ch 2 (Vout = +38 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) 128-Channel FLAT 77-Channel FLAT XMD128 XMD77 -- -- -65 -58 -62 -- Composite Triple Beat (Vout = +38 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 128-Channel FLAT 77-Channel FLAT CTB128 CTB77 -- -- -68 -64 -64 -- NF -- -- 4.8 5.8 5.5 7.5 dB IDC 280 318 350 mA Gain Flatness (40-860 MHz, Peak To Valley) Return Loss -- Input/Output (Zo = 75 Ohms) Noise Figure DC Current dBc dBc dBc 50 MHz 860 MHz REV 4 MHW8242A 7-54 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * Specified for 128-Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 860 MHz 27.7 dB GAIN 128-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Symbol Characteristic Frequency Range Min Typ Max Unit BW 40 -- 860 MHz Power Gain 50 MHz 860 MHz Gp 26.2 27 27.2 27.7 27.8 29.5 dB Slope 40-860 MHz S 0 0.6 2 dB GF -- 0.4 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz -- -69 -64 -- -65 -62 -- -69 -64 NF -- -- -- 6.0 5.5 7.0 dB IDC 280 310 350 mA Gain Flatness (40-860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL Composite Second Order (Vout = +38 dBmV/ch., Worst Case) CSO128 128-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = +38 dBmV/ch., FM = 55 MHz) 128-Channel FLAT Composite Triple Beat (Vout = +38 dBmV/ch., Worst Case) 128-Channel FLAT Noise Figure DC Current (VDC = 24 V, TC = 30C) dBc XMD128 dBc CTB128 50 MHz 860 MHz dBc REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW8272A 7-55 SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 14.3 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER MODULE Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Rating Input Value Output Value 200 200 V 2 2 kV Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 Unit ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 870 MHz Slope 40-870 MHz Symbol Min Typ Max Unit BW 40 -- 870 MHz Gp 13.8 14.3 14.8 dB S 0 0.4 1.0 dB Gain Flatness (40-870 MHz, Peak-to-Valley) GF -- -- 0.5 dB Return Loss -- Input (Zo = 75 Ohms) IRL 20 18 -- -- -- -- 20 18 -- -- -- -- Return Loss -- Output (Zo = 75 Ohms) 40-500 MHz f > 501 MHz dB ORL 40-160 MHz f > 160 MHz dB REV 1 MHW9146 7-56 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CSO79 CSO112 CSO132 -- -- -- -68 -63 -63 -64 -60 -60 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55.25 MHz ) (Vout = +46 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT XMD79 XMD112 XMD132 -- -- -- -60 -60 -60 -55 -55 -55 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CTB79 CTB112 CTB132 -- -- -- -64 -64 -64 -60 -60 -60 NF -- -- -- -- 4.4 3.8 4.0 4.3 5.5 -- -- 5.5 dB IDC 230 245 260 mA Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Unit dBc dBc dBc Noise Figure 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = 45C) NOTE: This device requires an external 0.01 F DC blocking capacitor connected to the output pin (Pin 9) as indicated in Figure 1. Figure 14. External Connections MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9146 7-57 SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * Specified for 110- and 152-Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 1000 MHz 19.4 dB GAIN 152-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 1000 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 1000 MHz, CATV Forward Amplifier CASE 714Y-04, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 1000 MHz Power Gain 50 MHz 1000 MHz Gp 18 18.7 18.5 19.4 19 20.7 dB Slope 40-1000 MHz S 0.4 0.9 1.4 dB GF -- 0.4 0.8 dB 20 -- -- -- -- 0.006 dB dB/MHz Gain Flatness (40-1000 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL Composite Second Order (Vout = +40 dBmV/ch., Worst Case) (Vout = +38 dBmV/ch., Worst Case) 110-Channel FLAT 152-Channel FLAT CSO110 CSO152 -- -- 70 -69 -63 -63 Cross Modulation Distortion @ Ch 2 (Vout = +40 dBmV/ch., FM = 55 MHz) (Vout = +38 dBmV/ch., FM = 55 MHz) 110-Channel FLAT 152-Channel FLAT XMD110 XMD152 -- -- -66 -65 -64 -61 Composite Triple Beat (Vout = +40 dBmV/ch., Worst Case) (Vout = +38 dBmV/ch., Worst Case) 110-Channel FLAT 152-Channel FLAT CTB110 CTB152 -- -- -68 -64 -66 -61 NF -- -- -- -- 4.0 4.5 5.5 6.0 5.0 -- -- 7.5 dB IDC 180 210 240 mA Noise Figure DC Current (VDC = 24 V, TC = 30C) dBc dBc dBc 50 MHz 550 MHz 860 MHz 1000 MHz REV 2 MHW9182B 7-58 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 18.5 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C Input Value Output Value Unit 300 300 V 2 2 kV ESD MAXIMUM RATINGS Rating Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 870 MHz Slope 40-870 MHz Gain Flatness (40-870 MHz, Peak-to-Valley) Return Loss -- Input (Zo = 75 Ohms) Return Loss -- Output (Zo = 75 Ohms) Symbol Min Typ Max Unit BW 40 -- 870 MHz Gp 17.5 18 18 18.5 18.5 19.5 dB S 0.2 0.6 1.2 dB GF -- 0.3 0.8 dB 20 19 18 -- -- -- -- -- -- 20 19 18 -- -- -- -- -- -- IRL 40-200 MHz 200-600 MHz 600-870 MHz dB ORL 40-200 MHz 200-600 MHz 600-870 MHz dB REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9186 7-59 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Symbol Min Typ Max 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT CSO132 CSO112 CSO79 -- -- -- -67 -65 -72 -60 -61 -64 Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT XMD132 XMD112 XMD79 -- -- -- -58 -58 -58 -52 -52 -52 Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT CTB132 CTB112 CTB79 -- -- -- -62 -61 -64 -58 -58 -60 NF -- -- 4 3.7 5.0 5.0 dB IDC 230 250 265 mA Characteristic Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = -20 to +100C) MHW9186 7-60 Unit dBc dBc dBc 50 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 20 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Input Value Output Value Unit Surge Voltage per IEC 1000-4-5 Rating 200 200 V Human Body Model per Mil. Std. 1686 0.7 2 kV ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Characteristic Frequency Range Min Typ Max Unit BW 40 -- 870 MHz Power Gain 870 MHz Gp 19.4 20 20.6 dB Slope 40-870 MHz S 0 0.5 1.0 dB GF -- -- 0.5 dB 20 18 16 -- -- -- -- -- -- 20 18 -- -- -- -- Gain Flatness (40-870 MHz, Peak-to-Valley) Return Loss -- Input (Zo = 75 Ohms) Return Loss -- Output (Zo = 75 Ohms) IRL 40-500 Mhz 501-750 Mhz 751-870 Mhz dB ORL 40-160 Mhz f > 160 Mhz dB REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9187 7-61 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -64 -66 -70 -65 -64 -63 -69 -74 -73 -62 -64 -68 -63 -62 -61 -67 -72 -71 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -57 -59 -62 -53 -55 -58 -60 -62 -67 -55 -57 -60 -51 -53 -56 -47 -60 -65 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -60 -64 -68 -60 -61 -64 -66 -71 -74 -56 -60 -66 -58 -59 -62 -64 -69 -72 NF -- -- -- -- 4.0 3.5 3.5 4.0 4.5 4.5 4.5 4.5 dB IDC 410 425 440 mA Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9187 7-62 Unit dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 20.3 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +75 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Rating Input Value Output Value Unit 300 300 V 2 2 kV Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 870 MHz Gp 19.7 20.3 20.9 dB Slope 40-870 MHz S 0 0.5 1.0 dB Gain Flatness (40-870 MHz, Peak-to-Valley) GF -- -- 0.5 dB Return Loss -- Input (Zo = 75 Ohms) IRL 20 18 16 -- -- -- -- -- -- 20 18 -- -- -- -- Return Loss -- Output (Zo = 75 Ohms) 40-500 MHz 501-750 MHz 751-870 MHz dB ORL 40-160 MHz f > 160 MHz dB REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9188 7-63 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -64 -66 -70 -65 -64 -63 -69 -74 -73 -62 -64 -68 -63 -62 -61 -67 -72 -71 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -57 -59 -62 -53 -55 -58 -60 -62 -67 -55 -57 -60 -51 -53 -56 -47 -60 -65 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -58 -62 -68 -60 -61 -64 -66 -71 -74 -56 -60 -66 -58 -59 -62 -64 -69 -72 NF -- -- -- -- 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 dB IDC 410 425 440 mA Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9188 7-64 Unit dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * * * Specified for 79-, 112- and 132-Channel Loading Mirror Image of MHW9188 Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 20.3 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications CASE 1302-01, STYLE 2 Description * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Mirror Power Doubler Amplifier MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +75 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Rating Input Value Output Value Unit 300 300 V 2 2 kV Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 870 MHz Gp 19.7 20.3 20.9 dB Slope 40-870 MHz S 0 0.5 1.0 dB Gain Flatness (40-870 MHz, Peak-to-Valley) GF -- -- 0.5 dB Return Loss -- Input (Zo = 75 Ohms) IRL 20 18 16 -- -- -- -- -- -- 20 18 -- -- -- -- Return Loss -- Output (Zo = 75 Ohms) 40-500 MHz 501-750 MHz 751-870 MHz dB ORL 40-160 MHz f > 160 MHz dB REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9189 7-65 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -64 -66 -70 -65 -64 -63 -69 -74 -73 -62 -64 -68 -63 -62 -61 -67 -72 -71 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -57 -59 -62 -53 -55 -58 -60 -62 -67 -55 -57 -60 -51 -53 -56 -47 -60 -65 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -58 -62 -68 -60 -61 -64 -66 -71 -74 -56 -60 -66 -58 -59 -62 -64 -69 -72 NF -- -- -- -- 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 dB IDC 410 425 440 mA Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9189 7-66 Unit dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 20.2 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER Applications * CATV Systems Operating in the 47 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Amplifier MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C Input Value Output Value Unit 300 300 V 2 2 kV ESD MAXIMUM RATINGS Rating Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 47 -- 870 MHz Power Gain 870 MHz Gp 19.6 20.2 20.8 dB Slope 47-870 MHz S 0.4 0.8 1.4 dB GF -- -- 0.5 dB 20 19 18 -- -- -- -- -- -- -- -- -- -66 -62 -63 -63 -59 -59 Gain Flatness (47-870 MHz, Peak-to-Valley) Return Loss -- Input/Output (Zo = 75 Ohms) Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) IRL/ORL 47-500 MHz 501-750 MHz 751-870 MHz dB dBc 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CSO79 CSO112 CSO132 REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9206 7-67 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT XMD79 XMD112 XMD132 -- -- -- -55 -55 -57 -51 -51 -51 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CTB79 CTB112 CTB132 -- -- -- -62 -60 -60 -60 -57 -57 NF -- -- 3.8 4 4.5 4.5 dB IDC 230 245 260 mA Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55.25 MHz) (Vout = +46 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9206 7-68 Unit dBc dBc 50 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 22.1 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER MODULE Applications * CATV Systems Operating in the 47 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Rating Input Value Output Value Unit 200 200 V 2 2 kV Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 47 -- 870 MHz Power Gain 870 MHz Gp 21.5 22.1 22.7 dB Slope 47-870 MHz S 0 0.5 1.0 dB -- -- -- 0.7 dB 20 18 16 -- -- -- -- -- -- Gain Flatness (40-870 MHz, Peak-to-Valley) Return Loss -- Input/Output (Zo = 75 Ohms) IRL 47-500 MHz 501-750 MHz 751-870 MHz dB REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9227 7-69 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -64 -66 -70 -65 -64 -63 -69 -74 -73 -62 -64 -68 -63 -62 -61 -67 -72 -71 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -57 -59 -62 -53 -55 -58 -60 -62 -67 -55 -57 -60 -51 -53 -56 -47 -60 -65 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -58 -62 -66 -57 -58 -60 -63 -65 -69 -56 -60 -64 -55 -56 -58 -61 -63 -67 NF -- -- -- -- 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 dB IDC 410 425 440 mA Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9227 7-70 Unit dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. The RF Line 870 MHz 23.6 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER MODULE Features * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Integrated ESD Protection Diodes GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications CASE 1302-01, STYLE 1 Description * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C Input Value Output Value Unit 200 200 V 2 2 kV ESD MAXIMUM RATINGS Rating Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 870 MHz Gp 23 23.6 24.3 dB Slope 40-870 MHz S 0 0.4 1.0 dB GF -- -- 0.8 dB 20 18 -- -- -- -- Gain Flatness (40-870 MHz, Peak-to-Valley) Return Loss -- Input (Zo = 75 Ohms) IRL 40-500 MHz f > 501 MHz dB REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9236 7-71 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Symbol Characteristic Return Loss -- Output (Zo = 75 Ohms) Min Typ Max 20 19 16 -- -- -- -- ORL 40-300 MHz 301-750 MHz f > 750 MHz Unit dB Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CSO79 CSO112 CSO132 -- -- -- -66 -64 -64 -63 -60 -60 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55.25 MHz) (Vout = +46 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT XMD79 XMD112 XMD132 -- -- -- -57 -57 -57 -53 -53 -53 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CTB79 CTB112 CTB132 -- -- -- -66 -66 -68 -60 -60 -60 NF -- -- -- -- 5.0 5.0 5.0 5.3 6.0 -- -- 6.0 dB IDC 240 255 270 mA Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9236 7-72 dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line Features * * * * * Specified for 77-, 110-, 128- and 152-Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions 1000 MHz 24 dB GAIN 152-CHANNEL CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 1000 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 1000 MHz, CATV Forward Amplifier CASE 1302-01, STYLE 1 MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +55 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 1000 MHz Power Gain 50 MHz 1000 MHz Gp 23.2 24 -- -- 24.8 26 dB Slope 40-1000 MHz S 0 -- 2.5 dB Gain Flatness (40-1000 MHz, Peak-to-Valley) GF -- -- 1.0 dB @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL 20 -- -- -- -- 0.01 dB dB/MHz Composite Second Order (Vout = +38 dBmV/ch; Worst Case) (Vout = +38 dBmV/ch; Worst Case) (Vout = +40 dBmV/ch;Worst Case ) (Vout = +44 dBmV/ch; Worst Case) 152-Channel FLAT 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO152 CSO128 CSO110 CSO77 -- -- -- -- -66 -69 -69 -78 -61 -- -- -- Cross Modulation Distortion @ Ch 2 (Vout = +38 dBmV/ch., FM= 55 MHz) (Vout = +38 dBmV/ch, FM = 55.25 MHz) (Vout = +40 dBmV/ch, FM = 55.25 MHz) (Vout = +44 dBmV/ch, FM = 55.25 MHz) 152-Channel FLAT 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD152 XMD128 XMD110 XMD77 -- -- -- -- -62 -65 -63 -58 -59 -- -- -- Return Loss -- Input/Output (Zo = 75 Ohms) dBc dBc REV 2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9242A 7-73 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Composite Triple Beat (Vout = +38 dBmV/ch., Worst Case) (Vout = +38 dBmV/ch, Worst Case) (Vout = +40 dBmV/ch, Worst Case) (Vout = +44 dBmV/ch, Worst Case) Noise Figure DC Current MHW9242A 7-74 Symbol Min Typ Max Unit CTB152 CTB128 CTB110 CTB77 -- -- -- -- -64 -68 -67 -64 -58 -- -- -- NF -- -- -- -- 4.8 5.5 5.8 -- 5.5 7.0 7.5 8.0 dB IDC 280 318 350 mA dBc 152-Channel FLAT 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT f = 50 MHz f = 750 MHz f = 860 MHz f = 1000 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 24.9 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C Input Value Output Value Unit 300 300 V 2 2 kV ESD MAXIMUM RATINGS Rating Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 870 MHz Gp 24.4 24.9 25.4 dB Slope 40-870 MHz S 0 0.5 1.0 dB Gain Flatness (40-870 MHz, Peak-to-Valley) GF -- -- 0.5 dB Return Loss -- Input (Zo = 75 Ohms) IRL 20 18 16 -- -- -- -- -- -- 20 18 -- -- -- -- Return Loss -- Output (Zo = 75 Ohms) 40-500 MHz 501-750 MHz 751-870 MHz dB ORL 40-160 MHz f > 160 MHz dB REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9247 7-75 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Symbol Min Typ Max 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -64 -66 -70 -66 -67 -68 -71 -74 -74 -62 -64 -68 -64 -65 -66 -69 -72 -72 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -56 -58 -60 -53 -54 -55 -55 -58 -61 -54 -56 -58 -51 -52 -53 -53 -56 -59 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -58 -61 -68 -58 -59 -61 -64 -67 -69 -56 -59 -66 -56 -57 -59 -62 -65 -67 NF -- -- -- -- 5.5 5.5 5.8 6.0 7.0 7.0 7.0 7.0 dB IDC 420 440 460 mA Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +56 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) (Vout = +58 dBmV @ 870 Mhz Equiv) Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9247 7-76 Unit dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 27.6 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER MODULE Applications * CATV Systems Operating in the 47 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description CASE 1302-01, STYLE 1 * 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Rating Input Value Output Value 200 200 V 2 2 kV Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 Unit ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 870 MHz Slope 47-870 MHz Symbol Min Typ Max Unit BW 40 -- 870 MHz Gp 27 27.6 28.2 dB S 0 0.7 1.4 dB Gain Flatness (40-870 MHz, Peak-to-Valley) GF -- -- 0.5 dB Return Loss -- Input (Zo = 75 Ohms) IRL 20 18 16 -- -- -- -- -- -- 47-500 MHz 501-750 MHz 751-870 MHz dB REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9267 7-77 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Return Loss -- Output (Zo = 75 Ohms) Symbol Min Typ Max 20 18 -- -- -- -- ORL 47-160 MHz f > 160 MHz Unit dB Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -62 -64 -68 -64 -65 -66 -69 -71 -72 -60 -62 -66 -62 -63 -64 -67 -69 -70 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -56 -58 -60 -52 -53 -55 -55 -58 -61 -54 -56 -58 -50 -51 -53 -52 -56 -59 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12db Tilt 112-Channel, 13.5db Tilt 112-Channel, 17db Tilt 79-Channel, 12db Tilt 79-Channel, 13.5db Tilt 79-Channel, 17db Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -58 -61 -66 -58 -59 -61 -62 -64 -67 -56 -59 -64 -56 -57 -59 -60 -62 -65 NF -- -- -- -- 5.5 5.5 5.8 6.0 7.0 7.0 7.0 7.0 dB IDC 410 440 460 mA Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9267 7-78 dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ Features * * * * * 79-, 112- and 132-Channel Loading Excellent Distortion Performance Integrated ESD Protection Diodes GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions 870 MHz 27.9 dB GAIN 132-CHANNEL GaAs CATV AMPLIFIER MODULE Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module CASE 1302-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C ESD MAXIMUM RATINGS Rating Input Value Output Value Unit 200 200 V 2 2 kV Surge Voltage per IEC 1000-4-5 Human Body Model per Mil. Std. 1686 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 870 MHz Gp 27 27.9 28.5 dB Slope 40-870 MHz S 0.4 0.95 1.4 dB GF -- -- 0.8 dB Gain Flatness (40-870 MHz, Peak-to-Valley) REV 1 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MHW9276 7-79 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Symbol Characteristic Input Return Loss (Zo = 75 Ohms) Min Typ Max 20 19 18 -- -- -- -- 20 18 18 -- -- -- -- IRL 40-200 MHz 201-600 MHz 601-870 MHz Output Return Loss (Zo = 75 Ohms) dB ORL 40-200 MHz 201-600 MHz 601-870 MHz Unit dB Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CSO79 CSO112 CSO132 -- -- -- -70 -66 -66 -64 -62 -60 Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT XMD79 XMD112 XMD132 -- -- -- -60 -60 -60 -53 -53 -53 Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) 79-Channel FLAT 112-Channel FLAT 132-Channel FLAT CTB79 CTB112 CTB132 -- -- -- -71 -68 -66 -65 -61 -60 NF -- -- -- -- 5.0 5.0 5.0 5.0 5.5 -- -- 6.5 dB IDC 235 250 265 mA Noise Figure DC Current (VDC = 24 V, TC = 45C) MHW9276 7-80 dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ %$& '"& ! Features * * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. 870 MHz 18.5 dB GAIN 132-CHANNEL CATV INTEGRATED AMPLIFIER MODULE Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications 16 1 Description CASE 978-03 PFP-16 * 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Amplifier Module MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C # # PIN CONNECTIONS # ! # # ! # # Functional Diagram # " ! ! " NOTE: MMG1001R2 Moisture Sensitivity Level (MSL) = 3. REV 0 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMG1001R2 7-81 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (minimum) Machine Model M1 (minimum) Charge Device Model C5 (minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 6.6 C/W ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 870 MHz Power Gain 50 MHz 870 MHz Gp -- -- 18 19 -- -- dB Slope 40-870 MHz S -- 0.6 -- dB Gain Flatness (40-870 MHz, Peak to Valley) GF -- 0.5 -- dB Input Return Loss (Zo = 75 Ohms) IRL -- -- 21 19 22 -- -- -- -- -- 22 17 -- -- f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz Output Return Loss (Zo = 75 Ohms) dB ORL f = 40-400 MHz f = 401-870 MHz dB Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT CSO132 CSO112 CSO79 -- -- -- -65 -65 -71 -58 -59 -62 Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT XMD132 XMD112 XMD79 -- -- -- -64 -63 -62 -52 -52 -52 Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT CTB132 CTB112 CTB79 -- -- -- -63 -64 -65 -56 -56 -58 NF -- -- 4 4 5.0 5.0 dB IDC 230 250 265 mA Noise Figure dBc dBc dBc 50 MHz 870 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MMG1001R2 7-82 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA # # # # " # # # $ # $ " " Figure 1. MMG1001R2 50-870 MHz Test Circuit Schematic Table 1. MMG1001R2 50-870 MHz Test Circuit Component Designations and Values Designation Description C1, C7, C8, C11 220 pF Chip Capacitors (0603) C2, C3, C4, C9, C10 0.01 mF Chip Capacitors (0603) C5, C6 1.8 pF Chip Capacitors (0603) C12 5.6 pF Chip Capacitor (0603) D1 5.1 V Zener Diode, On/MM3Z5V1T1 D2 27 V Zener Diode, On/MM3Z27VT1 D3 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 L1, L2 22 nH Chip Inductors (0603) Q1, Q2 Dual Transistors Package, On/MBT3904DW1T1 R1 2.2 kW, 1/4 W Chip Resistor (1206) R2 560 W Chip Resistor (0603) R3 82 W Chip Resistor (0603) R4, R5 820 W Chip Resistors (0603) R6 120 W Chip Resistor (0603) R7 1.5 kW Chip Resistor (0603) R8 12 W, 1 W Chip Resistor (2512) R9, R10, R15 470 W Chip Resistors (0603) R11, R12 18 W Chip Resistors (0603) R13, R14 910 W Chip Resistors (0603) R16 2 kW Chip Resistor (0603) R17 6.2 kW Chip Resistor (0603) R18 5.6 W Chip Resistor (0603) R19 0 W Chip Resistor (0603) T1 Input Transformer, Mot/77PC016E068 T2 Output Transformer, Mot/77PC016E061 PCB FR4, 62 mil, r = 4.81 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMG1001R2 7-83 MMG1001R2 Rev 0 $ $ " " " " % &%' ( Figure 2. MMG1001R2 50-870 MHz Test Circuit Component Layout MMG1001R2 7-84 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA TYPICAL CHARACTERISTICS +.41!/4$/4+/ 4*+& ) *+, ) *+, *+, *+, ) *+, ) )56##7 $6*#8. 76% -. //0 123 Figure 3. Composite Triple Beat versus Frequency !.41!/4!/"4"/4*+& ) *+, *+, *+, ) ) *+, ) ) *+, )56##7 $6*#8. 76% -. //0 123 91".4!!41"$ 4"!4*+& Figure 4. Composite Second Order versus Frequency ) *+, *+, ) *+, ) *+, *+, ) ) )56##7 $6*#8. 76% -. //0 123 Figure 5. Cross Modulation Distortion versus Frequency MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMG1001R2 7-85 SEMICONDUCTOR TECHNICAL DATA The RF Line !" # $ %$& '"& ! Features * * * * * * * Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection GaAs FET Transistor Technology Unconditionally Stable Under All Load Conditions In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. 870 MHz 19.5 dB GAIN 132-CHANNEL CATV INTEGRATED AMPLIFIER MODULE Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications 16 1 Description CASE 978-03 PFP-16 * 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler Amplifier Module MAXIMUM RATINGS Symbol Value Unit RF Voltage Input (Single Tone) Rating Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C # # PIN CONNECTIONS # ! # # ! # # Functional Diagram # " ! ! " NOTE: MMG2001R2 Moisture Sensitivity Level (MSL) = 3. REV 0 MMG2001R2 7-86 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (minimum) Machine Model M1 (minimum) Charge Device Model C5 (minimum) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 4.7 C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +45C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Unit BW 40 -- 870 MHz -- -- 19 21 -- -- S -- 0.8 -- dB Gain Flatness (40-870 MHz, Peak to Valley) GF -- 0.5 -- dB Input Return Loss (Zo = 75 Ohms) IRL -- -- 21 19 22 -- -- -- -- -- 22 17 -- -- Frequency Range Power Gain Gp 40 MHz 870 MHz Slope 40-870 MHz f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz Output Return Loss (Zo = 75 Ohms) dB dB ORL f = 40-400 MHz f = 401-870 MHz dB Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CSO132 CSO112 CSO79 CSO112 CSO112 CSO112 CSO79 CSO79 CSO79 -- -- -- -- -- -- -- -- -- -68 -70 -74 -63 -62 -61 -67 -72 -71 -60 -62 -66 -- -- -- -- -- -- Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt XMD132 XMD112 XMD79 XMD112 XMD112 XMD112 XMD79 XMD79 XMD79 -- -- -- -- -- -- -- -- -- -55 -57 -60 -51 -53 -56 -58 -60 -65 -53 -55 -58 -- -- -- -- -- -- Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel, 12 dB Tilt 112-Channel, 13.5 dB Tilt 112-Channel, 17 dB Tilt 79-Channel, 12 dB Tilt 79-Channel, 13.5 dB Tilt 79-Channel, 17 dB Tilt CTB132 CTB112 CTB79 CTB112 CTB112 CTB112 CTB79 CTB79 CTB79 -- -- -- -- -- -- -- -- -- -56 -60 -66 -58 -59 -62 -64 -69 -72 -54 -58 -64 -- -- -- -- -- -- NF -- -- -- -- 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 dB IDC 410 425 440 mA Noise Figure DC Current (VDC = 24 V, TC = 45C) MOTOROLA WIRELESS RF PRODUCT DEVICE DATA dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz MMG2001R2 7-87 # # # # # # # # " " " Figure 1. MMG2001R2 50-870 MHz Test Circuit Schematic Table 1. MMG2001R2 50-870 MHz Test Circuit Component Designations and Values Designation Description C1, C7, C8, C11 220 pF Chip Capacitors (0603) C2, C3, C4, C9, C10 0.01 mF Chip Capacitors (0603) C5, C6 1.8 pF Chip Capacitors (0603) D1 5.1 V Zener Diode, On/MM3Z5V1T1 D2 27 V Zener Diode, On/MM3Z27VT1 D3 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 Q1, Q2 Dual Transistors Package, On/MBT3904DW1T1 R1 2.2 kW, 1/4 W Chip Resistor (1206) R2 680 W Chip Resistor (0603) R3 180 W Chip Resistor (0603) R4 1600 W Chip Resistor (0603) R5 820 W Chip Resistor (0603) R6 120 W Chip Resistor (0603) R7 1.5 kW Chip Resistor (0603) R8 8 W, 1 W Chip Resistor (2512) R9, R10, R15 470 W Chip Resistors (0603) R11, R12 18 W Chip Resistors (0603) R13, R14 680 W Chip Resistors (0603) R16 2.4 kW Chip Resistor (0603) R17 6.2 kW Chip Resistor (0603) R18 0 W Chip Resistor (0603) T1 Input Transformer, Mot/77PC016E080 T2 Output Transformer, Mot/77PC016E071 T3 Output Transformer, Mot/77PC016E072 PCB FR4, 62 mil, r = 4.81 MMG2001R2 7-88 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMG2001R2 Rev 0 B C " " " " % &%' ( Figure 2. MMG2001R2 50-870 MHz Test Circuit Component Layout MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MMG2001R2 7-89 TYPICAL CHARACTERISTICS +.41!/4$/4+/ 4*+& ) *+, ) *+, ) *+, ) *+, ) ) *+, *+, *+, 56##7:. *+ 7% ; 123 -. //0 123 !.41!/4!/"4"/4*+& Figure 3. Composite Triple Beat versus Frequency ) *+, *+, ) *+, ) *+, ) ) *+, *+, *+, 56##7:. *+ 7% ; 123 -. //0 123 91".4!!41"$ 4"!4*+& Figure 4. Composite Second Order versus Frequency ) 56##7:. *+ 7% ; 123 ) *+, ) *+, ) *+, *+, ) *+, ) *+, ) ) *+, -. //0 123 Figure 5. Cross Modulation Distortion versus Frequency MMG2001R2 7-90 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Eight Tape and Reel Specifications Motorola offers the convenience of Tape and Reel packaging for our growing family of standard integrated circuit products. Reels are available to support the requirements of both first and second generation pick-and-place equipment. The packaging fully conforms to the latest EIA-481A specification. The antistatic embossed tape provides a secure cavity, sealed with a peel-back cover tape. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table of Contents Page Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . 8-2 Embossed Tape and Reel Ordering Information . . 8-4 Embossed Tape and Reel Data for Discretes . . . . 8-5 Tape and Reel Specifications 8-1 RF and IF Tape and Reel Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the "peel-back" cover tape. * SO-20L, SO-28L, TO-270 in 24 mm Tape * NI-360, NI-360S, NI-400, NI-400S, NI-600 in 32 mm Tape * TO-272, TO-272 Dual Lead, TO-272 Split Lead, TO-272 Split Lead-Straight Lead Version, TO-272 Straight Lead, TO-272 Wide Body Multi Lead and TO-272 Wide Body Multi Lead Gull Wing in 44 mm Tape * NI-780, NI-780S, NI-880, NI-880S in 56 mm Tape * * * * * * Two Reel Sizes Available (7 and 13) Used for Automatic Pick and Place Feed Systems Minimizes Product Handling EIA 481, -1, -2 SOT-363 in 8 mm Tape Micro-8, QFN-32, PLD-1, PLD-1.5, NI-200S, NI-200Z in 12 mm Tape * SO-16/16L, TSSOP-16 in 16 mm Tape Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. Micro-8 (12 mm) SO-16/16L (16 mm) SO-20L, SO-28L (24 mm) PLD-1 NI-200S, NI-200Z (12 mm) DRAIN LEAD PLD-1.5 (12 mm) PFP-16 (16 mm) (12 mm) PIN 1 DRAIN LEAD TSSOP-16 TO-270 (16 mm) (24 mm) DRAIN LEAD DIRECTION OF FEED Tape and Reel Specifications 8-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA NI-360, NI-360S DRAIN LEAD (32 mm) NI-400, NI-400S (32 mm) DRAIN LEAD DRAIN LEAD NI-600 TO-272, TO-272 Dual Lead, TO-272 Split Lead, TO-272 Split Lead-Straight Lead Version,TO-272 Straight Lead (32 mm) (44 mm) DRAIN LEAD TO-272 Wide Body Multi Lead TO-272 Wide Body Multi Lead Gull Wing (44 mm) DRAIN LEAD NI-780, NI-780S DRAIN LEAD NI-880, NI-880S (56 mm) DRAIN LEAD (44 mm) (56 mm) DRAIN LEAD DIRECTION OF FEED MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Tape and Reel Specifications 8-3 RF and IF EMBOSSED TAPE AND REEL ORDERING INFORMATION Devices Per Reel and Minimum Order Quantity Device Suffix (13) 2,500 R2 178 (7) 500 R1 178 (7) 500 R1 Package Tape Width (mm) Pitch mm (inch) Reel Size mm (inch) Micro-8 12 8.0 0.1 (.315 .003) 330 NI-200S (458B) 12 12.0 0.1 (.471 .004) NI-200Z (458C) 12 12.0 0.1 (.471 .004) NI-360 (360B) 32 24.0 0.1 (.945 .004) 330 (13) 500 R1 NI-360S (360C) 32 24.0 0.1 (.945 .004) 330 (13) 500 R1 NI-400 (465E) 32 32.0 0.1 (1.26 .004) 330 (13) 250 R3 NI-400S (465F) 32 32.0 0.1 (1.26 .004) 330 (13) 250 R3 NI-600 (465D) 32 32.0 0.1 (1.26 .004) 330 (13) 250 R3 NI-780 (465) 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3 NI-780S (465A) 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3 NI-880 (465B) 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3 NI-880S (465C) 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3 PLD-1 12 8.0 0.1 (.315 .004) 178 (7) 1,000 T1 PLD-1.5 12 8.0 0.1 (.315 .004) 178 (7) 1,000 T1 PFP-16 16 12.0 0.1 (.472 .004) 330 (13) 1,500 R2 QFN-24 12 8.0 0.1 (.315 .004) 178 (7) 2,500 R2 QFN-32 (5x5 mm) 12 8.0 0.1 (.315 .004) 178 (7) 2,500 R2 SO-16/16L 16 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 SO-20L 24 12.0 0.1 (.472 .004) 330 (13) 1,000 R2 SO-28L 24 12.0 0.1 (.472 .004) 330 (13) 1,000 R2 SOT-363 8 4.0 0.1 (.157 .004) 178 (7) 3,000 T1 TO-270 (1265) 24 16.0 0.1 (.631 .004) 330 (13) 500 R1 TO-272 (1264), TO-272 Straight Lead (1264A) 44 16.0 0.1 (.631 .004) 330 (13) 500 T1 TO-272 Split Lead (1366), TO-272 Split Lead-Straight Lead Version (1366A) 44 20.0 0.1 (.787 .004) 330 (13) 500 T1 TO-272 Dual Lead (1337) 44 16.0 0.1 (.631 .004) 330 (13) 500 R1 TO-272 Wide Body Multi Lead (1329) 44 20.0 0.1 (.788 .004) 330 (13) 500 R1 TO-272 Wide Body Multi Lead Gull Wing (1329A) 44 16.0 0.1 (.631 .004) 330 (13) 500 R1 TSSOP-16 16 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 Tape and Reel Specifications 8-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA EMBOSSED TAPE AND REEL DATA FOR DISCRETES CARRIER TAPE SPECIFICATIONS ' ! ! " # "$% & 3 ; - . 6! 7!) .'77 ' " ( " ) * + #% " #",% -(" ! . - 3!! ' . 4.5 & ) ) . -( . #/"0/1% -( ! #"/0% -( ! MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 2 #0"$,/% # 8 9% '!!9! : ;! 6 2 Tape and Reel Specifications 8-5 DIMENSIONS Tape Size B1 Max D D1 E1 F K P0 P2 R Min t Max W Max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etric dimensions govern -- English are in parentheses for reference only. NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max., NOTE 1: the component cannot rotate more than 10 within the determined cavity. NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 8-4. Tape and Reel Specifications 8-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA EMBOSSED TAPE AND REEL DATA FOR DISCRETES -( 6 - ) "2 - #"@% ' /" "2 #"2 "% " - #"102% 2 - #"0@0% !! . A Size A Max 12 mm 330 mm (12.992) 12.4 mm + 2.0 mm, -0.0 (.49 + .079, -0.00) 18.4 mm (.72) 16 mm 360 mm (14.173) 16.4 mm + 2.0 mm, -0.0 (.646 + .078, -0.00) 22.4 mm (.882) 24 mm 360 mm (14.173) 24.4 mm + 2.0 mm, -0.0 (.961 + .070, -0.00) 30.4 mm (1.197) 32 mm 360 mm (14.163) 44 mm 330 mm (12.992) 44.4 mm + 2.0 mm, -0.0 (1.748+ 0.79, -0.00) 50.4 mm (1.984) 44 mm TO-272 Wide Body Multi Lead 330 mm (12.992) 45.3 mm + 0.5 mm, -0.0 (1.785+ 0.02, -0.00) 50.4 mm (1.984) 44 mm TO-272 Wide Body Multi Lead Gull Wing 330 mm (12.992) 45.3 mm + 0.5 mm, -0.0 (1.785+ 0.02, -0.00) 50.4 mm (1.984) 56 mm 330 mm (12.992) 56.4 mm + 2.0 mm, -0.0 (2.220+ 0.79, -0.00) 62 mm (2.441) G 32.4 mm + 2.0 mm, -0.0 (1.276+ 0.79, -0.00) 7 - ; B T Max 38.4 mm (1.512) Reel Dimensions Metric Dimensions Govern -- English are in parentheses for reference only MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Tape and Reel Specifications 8-7 6 !!<A 7 </"" . ! B .!! C ! 7 /" # % ' 7 /"" -( 6 '!) 7 /"/"2 3 C & 7 /" #' % Figure 1. Reel Packing "2 7 /"/" "/ 7 /"/"2 Figure 2. Component Spacing 6! ) "$$ /"2<" 7 /", Figure 3. Reel Dimensions Tape and Reel Specifications 8-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Nine Packaging Information The packaging availability for each device type is indicated on the individual data sheets and in the Selector Guide. All of the outline dimensions for the packages are given in this section. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table of Contents Page Case Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9-2 CASE DIMENSIONS 9-1 Case Dimensions A A Q %!" 2X G !" R 1 2 3 4 K W !" 4X D & N L H F E T C 4X P !" SEATING PLANE CASE 301AP-02 ISSUE C !" -A- G -B- -S- J K !" 2 3 W D 3 PL & N H Q 2 PL !%" F P 3 PL !" E C -T- INCHES MIN MAX #$ #% # $ # % %$& $& & $$ % $ & & % % $ & DIM A B C D E F G H J K L N P Q R S W MILLIMETERS MIN MAX # % $ $# % %& & ##& $#$ # % & & % & & % R 1 S J S B SEATING PLANE DIM A B C D E F G H J K N P Q R S W INCHES MIN MAX #$ #% # $ # % %$& $& & $$ % $ & % % $ & MILLIMETERS MIN MAX # % $ $# % %& & ##& $#$ # % & % & CASE 301AS-01 ISSUE A CASE DIMENSIONS 9-2 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) -A- % & ' & ( % !" ( ( $ !" ( $ & G !" B A R -S- 1 2 !" 3 4 Q 2 PL !" V W N A H D 4 PL !" E C -T- SEATING PLANE J F DIM A B C D E F G H J K N P Q R S V W INCHES MIN MAX % # #$ % #& $& $& # ))) $& $ $% # % $ $& $& MILLIMETERS MIN MAX % % # %% $ & $& & % # ))) & % $ # # % #& %& & NOTE 3 P K 4 PL !" 4 PL VIEW A-A CASE 301AW-02 ISSUE B MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-3 CASE DIMENSIONS (continued) A G B !" A B % S R S 1 2 3 4 5 J 5X 2X W K Q !%" M N L H 5X D !" & T C 5X SEATING PLANE P !" & E DIM A B C D E F G H J K L M N P Q R S W MILLIMETERS MIN MAX # % $ $# % %& & ##& $#$ # % & ##& & % & INCHES MIN MAX #$ #% # $ # % %$& $& & $$ % $ & & & % % $ & F CASE 301AY-01 ISSUE O CASE DIMENSIONS 9-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) 2X 2X e1 D 4 3 EE EE A A2 B (B1) e4 E/2 E1/2 PIN 1 IDENTIFIER IN THIS ZONE D E A1 1 B 2 e3 E1 3X 2X B b )& VIEW C SEATING PLANE e2 4X A 4X q1 B SECTION B-B (SEE NOTE 7) CCC EEE EEE CCC GAUGE PLANE SEATING PLANE c c1 b b1 4X & & ( ** ( ** ( & ( & & & & &+ & & & & ** $ & + # &+ %** ** q1 q C L BASE METAL (L1) WITH PLATING VIEW C L2 DIM A A1 A2 b b1 B B1 c c1 D E E1 e1 e2 e3 e4 L L1 L2 q q1 MILLIMETERS MIN MAX ))) % # $ % & & & & $& & & $ $ & _ %_ _ _ CASE 318M-01 ISSUE O SOT-343 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-5 CASE DIMENSIONS (continued) Q ,,, 2X G B & ) !#$" + ' & 1 3 B 2 (FLANGE) D --- K 2X 2X & R (LID) ... N (LID) & ... C E T --- M & F S (INSULATOR) & ,,, & (INSULATOR) A H SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX # % # $ $ $& ## %# $ # $ # MILLIMETERS MIN MAX # # % $ %& $ $ # # % ## # # % A CASE 360B-05 ISSUE F NI-360 A A (FLANGE) B 1 ) !#$" + ' & 2 B (FLANGE) 2X 2X K & D --- R N (LID) (LID) ... & ... F H E & C PIN 3 T M SEATING PLANE S (INSULATOR) (INSULATOR) --- & ,,, & DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX # % $ # $# % $ # $ # MILLIMETERS MIN MAX #% # # $# % # $ # # ## # # % CASE 360C-05 ISSUE D NI-360S CASE DIMENSIONS 9-6 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) G 2x K (INSULATOR) 1 --- B (FLANGE) --- Q --- D & & N (LID) & 2x 2x B 3 2 ... ) !#$" + ' & S & R (LID) ... E & F H C T M SEATING PLANE A & INCHES MIN MAX # % #$ $ $ $& ## %# % $ $ MILLIMETERS MIN MAX # # % # % $ %& $ $ # $ $ % # # # # % (INSULATOR) ,,, DIM A B C D E F G H K M N Q R S aaa bbb ccc A CASE 360D-02 ISSUE B NI-360HF 2X A A Q --- & ) !#$" + ' & & !%$" & + 4 G B L 1 2 B (FLANGE) 5 3 4X K 4X 4 D --- ... & & ... N & F S (INSULATOR) --- (LID) H M PIN 5 R C (LID) E & T SEATING PLANE (INSULATOR) --- & DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX % % $ # $ & # # % & % %$% % %$ % % $ MILLIMETERS MIN MAX $ $ # $ %$ % #% #& $ # $ %& $ $ # % CASE 375B-04 ISSUE E NI-860 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-7 CASE DIMENSIONS (continued) 2X Q --- A A & ) !#$" + ' & & !%$" & + G 4 B L 4X 1 2 3 4 B (FLANGE) 4X K D ,,, & ... ... & & R (LID) N (LID) F H C E S PIN 5 T M (INSULATOR) --- & (INSULATOR) SEATING PLANE --- & INCHES MIN MAX $ $ $ $ $$ # & # % # # & % $ $ # DIM A B C D E F G H K L M N Q R S aaa bbb ccc MILLIMETERS MIN MAX % % % $ % # $% % $& $ # % #& $ # # CASE 375D-04 ISSUE C NI-1230 A A (FLANGE) 4X Z L ) !#$" + ' & B 1 2 3 4X 4 B (FLANGE) 4X K D ,,, & ... ... & & R (LID) N (LID) F H C E PIN 5 T M (INSULATOR) --- & SEATING PLANE S (INSULATOR) --- & DIM A B C D E F H K L M N R S Z aaa bbb ccc INCHES MIN MAX $ $ $$ # # % # # & % $ $ # MILLIMETERS MIN MAX $$ % % $ % # $% % $ # % #& $ # # CASE 375E-03 ISSUE C NI-1230S CASE DIMENSIONS 9-8 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) --- & G !#$" + ' & D Q --- 2X --- & L S (INSULATOR) & B 1 DIM A B C D E F G H K L M N Q R S bbb ccc 4 3 K (FLANGE) 2 4 PL B R (LID) ... & N (LID) ... & M (INSULATOR) --- & F C 5 H E A T A INCHES MIN MAX #% $ $ & ## %# $& $ $# $% $ # & & SEATING PLANE (FLANGE) MILLIMETERS MIN MAX %% # # $ %$& $ $ $$& $ $$ $ $ # ## # # & %& CASE 375F-04 ISSUE D NI-650 4 G ... R & Q --- 2X L J (LID) 2 1 B S 4X & 4 D --- ... & & & F N (LID) E M H (INSULATOR) --A C A CASE 375G-04 ISSUE E NI-860C3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA ) & !#$" + ' & & !%$" & + DIM A B C D E F G H J K L M N Q R S bbb ccc B (INSULATOR) --- 3 K (FLANGE) 5 4X & T SEATING PLANE INCHES MIN MAX % % $ # $ & # # & $ & % %$% % %$ % % $ MILLIMETERS MIN MAX $ $ # $ %$ % #% #& $ # #& %& $ $ # % CASE DIMENSIONS 9-9 CASE DIMENSIONS (continued) S (INSULATOR) --- & L B 1 2 B 3 R 4X (LID) ... & (FLANGE) 5 4 K D --- & M N ... (INSULATOR) --- (LID) & ) & !#$" ' & C E H T A A F & DIM A B C D E F H K L M N R S bbb ccc INCHES MIN MAX %% % % % $ # $ # # % & % %$% % %$ $ SEATING PLANE (FLANGE) MILLIMETERS MIN MAX % # $ # $ %$ % #% $ # $ %& $ $ # % CASE 375H-03 ISSUE B NI-860S A G V 6 5 % 4 DIM A B C D G H J K N S V -B- S 1 2 3 D 6 PL !%" & N INCHES MIN MAX # %# $& ))) % # %# $ MILLIMETERS MIN MAX % % $& ))) J C H K CASE 419B-01 ISSUE G SOT-363 CASE DIMENSIONS 9-10 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) ... & M (INSULATOR) R 1 (LID) ... & B Z 4X 3 B (FLANGE) 2X K S (INSULATOR) ... 2 2X & D --- & ... & & + DIM A B C D E F H K M N R S Z bbb ccc N (LID) E F C H T A A SEATING PLANE (FLANGE) INCHES MIN MAX % % $ # $ $ # ## % # # $ ))) MILLIMETERS MIN MAX # % $ % % $ $ $ #%# # $ $ $% # %%$ %% ))) % % CASE 458B-03 ISSUE D NI-200S MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-11 CASE DIMENSIONS (continued) ... & M F (INSULATOR) 4X Z R ... 1 Y (LID) S & 3 (INSULATOR) ... !' " & & + & B (FLANGE) DIM A B C D E F H K M N R S Y Z bbb ccc 2 2X D --- ... & 2X K & B N (LID) E C H A A B CASE 458C-03 ISSUE D NI-200Z G 2X 1 Q --- & ) !#$" + ' & 3 B K 2 (FLANGE) D --- & M N R (INSULATOR) --- & ... S (LID) ... & ,,, (LID) & (INSULATOR) & H C F E T A A MILLIMETERS MIN MAX # % $ % % $ $ # %$ $ $ $% # %%$ %% % $ ))) % % SEATING PLANE T (FLANGE) INCHES MIN MAX % % $ # $ # ## % # # $ ))) SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX % # $ & # $# # ## #%$ ## #%% % % $ # $ # MILLIMETERS MIN MAX $ $ % # % % % #& # $$ $ $ # # # % (FLANGE) CASE 465-06 ISSUE F NI-780 CASE DIMENSIONS 9-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B ) !#$" + ' & (FLANGE) D --- & N (LID) R ... M & ... & ,,, S (INSULATOR) --- (LID) & (INSULATOR) & H C 3 F E T A A DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX % % % # $ # $# # ## #%$ ## #%% $ # $ # ))) ))) MILLIMETERS MIN MAX # $ % # % % % # $ $ # # ))) ))) #$ # % SEATING PLANE (FLANGE) CASE 465A-06 ISSUE F NI-780S B G 4 2X 1 Q --- & ) !#$" + ' & & $ !#" & + B (FLANGE) 3 K 2 --- D & M --- & ... & N R (INSULATOR) ... ,,, & S (LID) & (LID) (INSULATOR) H C F E A T SEATING PLANE A DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX # $ & # $# # %# %%% %# %% % % # MILLIMETERS MIN MAX $ $ % # % # % % % #& # $ #% % (FLANGE) CASE 465B-03 ISSUE C NI-880 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-13 CASE DIMENSIONS (continued) B 1 B (FLANGE) K ) !#$" + ' & 2 --- D & M --- & ... N ... R (INSULATOR) & (LID) & S (LID) ,,, & (INSULATOR) H C F E T A A SEATING PLANE INCHES MIN MAX # $ # $# # %# %%% %# %% # DIM A B C D E F H K M N R S aaa bbb ccc MILLIMETERS MIN MAX $ % # % # % % % # $ #% % (FLANGE) CASE 465C-02 ISSUE A NI-880S G B 1 2X Q --- & ) !#$" + ' & 3 B K 2 (FLANGE) --- D & M --- ... & & N (INSULATOR) (LID) ... & R (LID) S (INSULATOR) C F H E A T A SEATING PLANE ,,, & DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX $ # % $ $ # $ %#& $ $ $$ $ MILLIMETERS MIN MAX # # $ $ % #% & $ % $$ # $ % CASE 465D-05 ISSUE D NI-600 CASE DIMENSIONS 9-14 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) 2X --- G Q & !#$" + ' & & ' !(" & $ !" $ !" / B SEE NOTE 4 1 3 2X K B 2 2X D --- & N (LID) ... & ... & R (LID) C E ,,, & T M (INSULATOR) A F S (INSULATOR) SEATING PLANE ,,, H & DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX # % % $ # % $ $& # $# & & & MILLIMETERS MIN MAX $ # $% # % & # #& & %& A CASE 465E-04 ISSUE E NI-400 2X D --- & ) !#$" + ' & 1 2 2X K ... N E & R (LID) (LID) ... C & & F 3 A T A (FLANGE) M ,,, SEATING PLANE (INSULATOR) & H S (INSULATOR) ,,, B B (FLANGE) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX $ # % $ # $# MILLIMETERS MIN MAX % $% # % # # % CASE 465F-04 ISSUE C NI-400S MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-15 CASE DIMENSIONS (continued) L R 2 A F 10_DRAFT EEEE EEEE EEEE EEEE EEEE EEEE EEE EEE U ZONE X 4 3 N K G Q S ZONE V H 1 D B $ # C P ZONE W J E 0.89 (0.035) X 45 _ "5 _ RESIN BLEED/FLASH ALLOWABLE inches mm SOLDER FOOTPRINT % & 0 +& 1 + ( CASE 466-02 ISSUE B PLD-1.5 CASE DIMENSIONS 9-16 DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX $ $ # $ $ # $ $ % # % % $ $ $ MILLIMETERS MIN MAX $% $# # # $ % % $$ $$ # #% $ $ # $ # $ $% % $ $ % MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) 14 8 1 7 + & $ $$) & + $$)$ B A F L N C -T- SEATING PLANE J K H D 14 PL G !" M DIM A B C D F G H J K L M N INCHES MIN MAX # ## $ % # & % ))) _ MILLIMETERS MIN MAX %$ %% $ $$ $ $ % #% & % ## #%# ))) _ % CASE 646-06 ISSUE N DIP-14 % + & -A- 16 9 1 8 B F C L S -T- SEATING PLANE K H G D J 16 PL !" M DIM A B C D F G H J K L M S INCHES MIN MAX # ## # # # & & % _ _ MILLIMETERS MIN MAX %% $ $% $ ## & #& % % # ## _ _ CASE 648-08 ISSUE R DIP-16 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-17 CASE DIMENSIONS (continued) ! " & + !" ( + & J 18 10 B 1 L 9 M A DIM A B C D F G H J K L M N C K N F H D SEATING PLANE G INCHES MIN MAX %# $ % # & $ % & _ _ MILLIMETERS MIN MAX $ $$ $ # $ $ # #% & #$& _ _ CASE 707-02 ISSUE C DIP-18 28 ! " & + !" ( + & 15 B 14 1 H F G D L C N A K M J SEATING PLANE DIM A B C D F G H J K L M N INCHES MIN MAX $ $ $ & $ % % $& _ _ MILLIMETERS MIN MAX $ # # % $ $ & $ $ % & _ _ CASE 710-02 ISSUE B DIP-28 CASE DIMENSIONS 9-18 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) A 1.775 MAX 1.500 1.085 MAX .325 .300 .250 MAX .156 .600 MAX Z F .168 .148 2X 4X .100 .022 .018 7X $ # % .163 .152 2X $ # % .156 .840 MAX .355 .435 .315 MIN .510 .465 .165 1 2 3 5 7 8 9 .200 E T .400 1.000 2X #6-32 UNC-2B 1 CASE 714Y-04 ISSUE E MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-19 CASE DIMENSIONS (continued) -A- 16 % & ( !$" & +& & & # !" ( ( 9 -B- 1 P 8 PL !" 8 & G R K DIM A B C D F G J K M P R F X 45 _ C -T- SEATING PLANE J M D 16 PL !" & MILLIMETERS MIN MAX % % # #& _ #_ % $ INCHES MIN MAX %$ # $% $ & % _ #_ CASE 751B-05 ISSUE J SO-16 D A 20 10X M ( & & +& & ( & ( 11 H & E 1 10 h 20X X 45 _ B B & A 18X e A1 L SEATING PLANE T C DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX $ $ # #$ #& # _ #_ CASE 751D-06 ISSUE G SO-20L CASE DIMENSIONS 9-20 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) D A ( & & +& & & ( & ( 15 E H & 28 1 14 B A PIN 1 IDENT A1 e B C & L C SEATING PLANE q DIM A A1 B C D E e H L q MILLIMETERS MIN MAX $ #% % # #$ #& _ %_ CASE 751F-05 ISSUE F SO-28L A D M 16 8X 9 ( & & +& & & ( & ( H & E 1 8 16X h X 45 _ B B & A SEATING PLANE L 14X T e A1 C DIM A A1 B C D E e H h L M MILLIMETERS MIN MAX $ # #$ #& # _ #_ CASE 751G-04 ISSUE C SO-16W MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-21 CASE DIMENSIONS (continued) h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X --- B BOTTOM VIEW E & EE CC CC EE b1 Y c A A2 c1 b DATUM PLANE SEATING PLANE H ... q W GAUGE PLANE W L SECT W-W L1 C ,,, A1 )) & + + ( & & +& )) - & +& & # ( - ( $ )) )&) & )) DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX $ # # % %% $ # # % $$ # & # % # % %& ))) $ _ #_ 1.000 0.039 DETAIL Y CASE 978-03 ISSUE B PFP-16 CASE DIMENSIONS 9-22 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) A E1 B r1 4 b2 4X ,,, 1 6 D1 ,,, DRAIN ID 2X b1 ,,, 5 2 D 5 4X e 3 6 4 4X b3 CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC E C SEATING PLANE D SEATING PLANE H Y Y A1 L q A2 c1 NOTE 6 3 2 1 VIEW Y-Y A DATUM PLANE DRAIN ID $ ! " ! " ! " ! " )) + + ( & +& $ )) - - & +& & & ( - - ( $ ( DIM A A1 A2 D D1 E E1 L b1 b2 b3 c1 e r1 q aaa INCHES MIN MAX % % $ $ %$ % $ $ $ # #% % %% # & $ $% _ $_ MILLIMETERS MIN MAX % # % $ # # $#$ #% ## $% $ ##% % %% #% # & $ ## _ $_ CASE 1264-08 ISSUE H TO-272 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-23 CASE DIMENSIONS (continued) 2X ,,, 4X E2 P & b2 ,,, A E1 B 4 1 CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC 6 DRAIN ID 2X b1 ,,, 5 2 D D2 5 4X e 6 3 4 4X b3 D1 ,,, E A F SEATING PLANE Y NOTE 5 3 2 1 --- & VIEW Y-Y c1 D DRAIN ID ZONE "J" A1 Y $ 6 A2 ! " ! " ! " ! " +& $ )) - - & +& & & ( - - ( ( $ + 1 2 DIM A A1 A2 D D1 D2 E E1 E2 F P b1 b2 b3 c1 e aaa bbb INCHES MIN MAX % $ % $ %& $%& $ #& & $ #% % %% # & % MILLIMETERS MIN MAX $ $ # # #& & # $ $ & $& % #% # & CASE 1264A-02 ISSUE A TO-272 STRAIGHT LEAD CASE DIMENSIONS 9-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) B E1 2X 2X D3 PIN ONE ID E4 ,,, D ,,, 2X D1 b1 E A CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC E3 PIN 2 D2 PIN 3 EXPOSED HEATSINK AREA PIN 1 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 F b1 c1 aaa BOTTOM VIEW c1 H ) )) + + ( & " " +& $ " " 3 )) - & +& & & ( - ( $ )) )&) & )) # + 1 "2 % " " +& " " 3 ) ) DATUM PLANE A A1 INCHES MIN MAX #$ % % $ #$ % $ $ $ $$ # % % $$ & # MILLIMETERS MIN MAX $ # # ## # ## % $ # % $ $% %% % # # $% $& $ % % 2X A2 NOTE 7 F E2 D ZONE J CASE 1265-07 ISSUE F TO-270 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-25 CASE DIMENSIONS (continued) A S B A Z V J F Q 2X R F 2X 6-32UNC-2B L 2X U 1 E 1 2 3 5 7 8 9 C N K E 4X 2X 1 G 7X P D Y INCHES MIN MAX ))) ## ))) % ))) % $ & $& & $& & % $% ))) $ & & ))) ))) & $ MILLIMETERS MIN MAX ))) % ))) # ))) $ % % #$ % & $& % # & & & # $# ))) %& %& ))) $ ))) $& %$ # Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X ( $ # % CASE 1302-01 ISSUE B CASE DIMENSIONS 9-26 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) PIN 1 INDEX AREA 4 A 2X M G 2X 1.0 1.00 0.8 0.75 4 6 (0.24) 0.05 0.00 (0.5) DETAIL G M C SEATING PLANE VIEW ROTATED 90 CLOCKWISE B DETAIL M PIN 1 IDENTIFIER 2.25 1.95 & 19 2 ' )4) & & $ # 4 ' ( EXPOSED DIE ATTACH PAD 24 0.25 18 1 13 6 2.25 1.95 & N 12 24X 0.5 20X 7 0.5 0.3 24X VIEW M-M 0.30 0.18 & (45 ) (90 ) DETAIL T (0.25) 24X 2X 0.39 0.31 0.065 0.015 (1.227) 2X 0.1 0.0 DETAIL N PREFERRED CORNER CONFIGURATION DETAIL M DETAIL T PREFERRED PIN 1 BACKSIDE IDENTIFIER PREFERRED PIN 1 BACKSIDE IDENTIFIER 4 (45 ) (90 ) DETAIL S 0.60 0.24 2X 0.39 0.31 (0.4) (0.18) 0.60 0.24 DETAIL N CORNER CONFIGURATION OPTION 4 0.1 MIN DETAIL M PIN 1 BACKSIDE IDENTIFIER OPTION DETAIL S PIN 1 BACKSIDE IDENTIFIER OPTION 5 CASE 1307-01 ISSUE B QFN-24 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-27 CASE DIMENSIONS (continued) PIN 1 INDEX AREA 2X 4 A M 2X G 1.0 1.00 0.8 0.75 4 5 (0.24) 0.05 0.00 (0.5) DETAIL G DETAIL M PIN 1 INDEX 2.25 1.95 & 16 EXPOSED DIE ATTACH PAD 20 15 2 ' )4) & $ 4 ' ( 1 2.25 1.95 & 5 11 0.5 16X N 10 20X SEATING PLANE VIEW ROTATED 90 CLOCKWISE M B C 6 0.75 0.50 20X VIEW M-M 0.30 0.18 & (45 ) (1.19) 20X 0.065 0.015 0.60 0.24 0.60 0.24 (0.27) DETAIL N DETAIL N PREFERRED CORNER CONFIGURATION CORNER CONFIGURATION OPTION 4 4 1.1 1.0 DETAIL T (90 ) BACKSIDE PIN 1 INDEX 0.475 0.425 2X 0.39 0.31 R 0.25 0.15 2X 0.1 0.0 DETAIL M DETAIL M DETAIL T PREFERRED BACKSIDE PIN 1 INDEX BACKSIDE PIN 1 INDEX OPTION PREFERRED BACKSIDE PIN 1 INDEX CASE 1308-02 ISSUE C QFN-20 CASE DIMENSIONS 9-28 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) PIN 1 INDEX AREA 2X 5 A M 2X G 1.0 1.00 0.8 0.75 5 6 (0.25) 0.05 0.00 (0.5) DETAIL G C SEATING PLANE VIEW ROTATED 90 CLOCKWISE M B & DETAIL M PIN 1 INDEX 3.25 2.95 EXPOSED DIE ATTACH PAD 32 25 24 2 ' )4) & $ 4 ' ( 1 0.25 3.25 2.95 & 16 32X 0.5 28X 0.30 0.18 & 8 17 N 9 0.5 0.3 32X VIEW M-M (45 ) 0.60 0.24 (1.73) 32X 0.065 0.015 0.60 0.24 (0.25) DETAIL N DETAIL N PREFERRED CORNER CONFIGURATION CORNER CONFIGURATION OPTION 4 4 1.6 1.5 DETAIL T (90 ) BACKSIDE PIN 1 INDEX 0.475 0.425 2X 0.39 0.31 R 0.25 0.15 2X 0.1 0.0 DETAIL M DETAIL M DETAIL T PREFERRED PIN 1 BACKSIDE INDEX BACKSIDE PIN 1 INDEX OPTION PREFERRED PIN 1 BACKSIDE INDEX CASE 1311-02 ISSUE D QFN-32, 5x5 mm MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-29 CASE DIMENSIONS (continued) r1 & 2X ,,, E1 B A NOTE 6 PIN ONE INDEX 4X ,,, b1 6X e1 4X e2 2X e3 e D1 ,,, b3 ,,, b2 D M 10X b ,,, CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC N E VIEW Y-Y DATUM PLANE H A c1 C SEATING PLANE F Y ZONE "J" Y A1 7 A2 ) )) + + ( & +& $ !" )) - - - - & +& & & !" ( - - - - ( $ ( # + 1 2 DIM A A1 D D1 E E1 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX % $ % $ %& & $ ))) # ))) # # # # & & & & $ $% MILLIMETERS MIN MAX $ $ # #& % $& ))) $%$ ))) % # %# % % #& & $& %& $ # CASE 1329-08 ISSUE H TO-272 Wide Body Multi Lead CASE DIMENSIONS 9-30 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) A E1 r1 & 2X ,,, B 4X PIN ONE INDEX ,,, b1 6X e1 4X e2 2X e3 b3 ,,, e D1 ,,, D M b2 b 10X ,,, EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE NOTE 6 N E VIEW Y-Y DETAIL Y DATUM PLANE H A2 A c1 Y Y C L1 t L GAGE PLANE A1 DETAIL Y SEATING PLANE ) )) + + ( & +& $ !" )) - - - - & +& & & !" ( - - - - ( $ ( ' DIM A A1 A2 D D1 E E1 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa INCHES MIN MAX % $ $ %& # % & $ ))) # ))) # # # # & & & & $ $% % MILLIMETERS MIN MAX $ # # #& % $ & ))) $%$ ))) % # %# % % #& & $& %& $ # % CASE 1329A-02 ISSUE A TO-272 Wide Body Multi Lead Gull Wing MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-31 CASE DIMENSIONS (continued) 2X ,,, A E1 B r1 & GATE LEAD D1 2X EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE DRAIN LEAD b1 ,,, D 2 DRAIN ID PIN 3 1 NOTE 8 E VIEW Y-Y c1 H DATUM PLANE A A1 A2 7 F ZONE "J" Y Y C SEATING PLANE )) + + ( & +& $ )) - & +& & & ( - ( $ )) )&) & )) # + 1 2 % ( DIM A A1 A2 D D1 E E1 F b1 c1 r1 aaa INCHES MIN MAX % $ % $ %& % $ & # $ $% MILLIMETERS MIN MAX $ $ # # #& $ $ $& % % $ # CASE 1337-02 ISSUE A TO-272 Dual Lead CASE DIMENSIONS 9-32 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) LASER MARK FOR PIN 1 IDENTIFICATION IN THIS AREA 3 M A 2X G 1.0 1.00 0.8 0.75 3 5 (0.24) 0.05 0.00 2X C SEATING PLANE DETAIL G M B (0.5) VIEW ROTATED 90 CLOCKWISE & 1.25 0.95 & 12X 0.3 0.18 12X 10 DETAIL M PIN 1 IDENTIFIER 12 EXPOSED DIE ATTACH PAD 8X (1.177) 4X 9 1 7 3 0.75 0.5 6 & 12X 0.065 0.015 3X (R0.09) 4X (0.18) DETAIL N N 4 8X 1.25 0.95 (45 ) CORNER CONFIGURATION 4 0.5 VIEW M-M (90 ) DETAIL S 4X 8X (0.25) 2X 0.39 0.31 (0.777) 2X DETAIL M PIN 1 BACKSIDE IDENTIFIER 0.1 0.0 DETAIL S PIN 1 BACKSIDE IDENTIFIER 2 ' )4) & CASE 1345-01 ISSUE A QFN-12 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-33 CASE DIMENSIONS (continued) 2X ,,, 4X B E1 A E2 P & b2 ,,, 5 1 6 2 CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC 8 (b1) & 7 2X b3 D D1 D2 4X 7 e 3 4X 6 e1 4X 8 b1 ,,, 4 5 & E C SEATING PLANE D SEATING PLANE A1 q A2 DATUM PLANE H $ # % ! " ! " ! " ! " c1 CASE 1366-03 ISSUE B TO-272 Split Lead CASE DIMENSIONS 9-34 4 3 --- & 2 1 VIEW Y-Y Y L NOTE 6 )) + + ( & +& $ )) - - & +& & & ( - - ( $ ( A Y DRAIN ID DIM A A1 A2 D D1 D2 E E1 E2 L P b1 b2 b3 c1 e e1 q aaa bbb INCHES MIN MAX % % $ $ %& $%& $ $ #& $ # $ %% $$ # $# # # & & _ $_ % MILLIMETERS MIN MAX # $ # #& & # ## $ $ & #% $% % # % #% # $& & _ $_ MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) 2X ,,, E1 A B P & ,,, 3X 5 1 6 2 E2 & b 8 3X e2 2X b2 ,,, & 4X D1 (b1) b3 7 D D2 4X e 4X 7 e1 3 6 4X ,,, b1 & 4 8 5 b4 --- & 4X CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC DRAIN ID NOTE 5 4 3 2 1 VIEW Y-Y E c1 A D SEATING PLANE F Y $ # % ZONE "J" ! " ! " ! " ! " A1 Y 6 A2 +& $ )) - - & +& & & ( - - ( ( $ + 1 2 DIM A A1 A2 D D1 D2 E E1 E2 F P b b1 b2 b3 b4 c1 e e1 e2 aaa bbb INCHES MIN MAX % $ % $ %& $%& $ #& & $ %% $$ # $# # ## % # & & & % MILLIMETERS MIN MAX $ $ # # #& & # $ $ & $& $# % $% % # % $ #% # $& & %& CASE 1366A-02 ISSUE A TO-272 Split Lead - Straight Lead Version MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-35 CASE DIMENSIONS (continued) B 7 A 7 1.01 0.1 0.7 0.05 A 2.950.05 2.450.05 2.55 2.2 0.3 0.7 2.24 3.15 0.50.05 10.05 3.15 2.9 2.52 0.80.05 1.77 1.02 0.97 0.07 0 30.05 9X 0.50.05 SQ 2.370.05 2.215 2.4 2.4 0.50.05 0.80.05 0.50.05 BOTTOM VIEW 3.15 2.4 0 1.65 1.20.05 1.03 2.8 0.50.05 PIN ONE IDENT & CASE 1383-02 ISSUE A 7x7 mm Module CASE DIMENSIONS 9-36 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS (continued) 0.65/0.55 (0.70/0.55 WITH PLATING) & 4X 2X 2 TIPS A EE EE 1 2.1 1.9 2.2 2.0 1.15 2 3 1.0 0.8 & 0.1 0.0 0.65 0.15 1.3 4 0.5 B 10 4 1.35 1.15 SEATING PLANE 1.1 MAX 0.35 0.25 & 8 0 0.46/0.26 (0.425) VIEW C SECTION B-B (SEE NOTE 6) 0.40 0.25 B 10 4 SEATING PLANE PIN 1 IDENTIFIER IN THIS ZONE B 4X C 4X 3X VIEW C 0.25 0.10 CCC EEEE EEEE CCC 0.35 0.25 BASE METAL WITH PLATING 0.08 0.20 & & & ( & ( & & & & &+ & & & + $ &+ %** ** CASE 1404-01 ISSUE O Plastic SOT-343R MOTOROLA WIRELESS RF PRODUCT DEVICE DATA CASE DIMENSIONS 9-37 14 3.242 2.048 6 15 0.752 5 16 2X 0.543 4 17 2X 1.864 3 18 3.159 2 3.343 2X 2X 1 10 23 22 20 5.471 0 8.230.05 0.111 19 23X 2.5650.05 3.734 0.152 1.143 2.438 3.734 21 1.6 0.1 3.962 2.692 4.537 7 8 9 0 2.438 12 1.78 1.143 1213 5.451 4.639 1.143 11 C PIN 1 INDEX 2.709 9 B 3.962 1.435 CASE DIMENSIONS (continued) 0.660.05 SQ 2.3620.05 BOTTOM VIEW A & CASE 1440-01 ISSUE O 9x12 mm Module CASE DIMENSIONS 9-38 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Chapter Ten Applications and Product Literature Motorola's Applications Literature provides guidance to the effective use of its semiconductor families across a broad range of practical applications. Many different topics are discussed in a way that is not possible in a device data sheet, from detailed circuit designs complete with PCB layouts, through matters to consider when embarking on a design, to complete overviews of product families and their design philosophies. Information is presented in the form of Application Notes, Article Reprints and Engineering Bulletins. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Table of Contents Page Applications Literature . . . . . . . . . . . . . . . . . . . . . . . . . 10-2 Product Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-3 Applications and Product Literature 10-1 Applications and Product Literature Application Notes, Engineering Bulletins and Article Reprints of special interest to designers of RF and RF/IF equipment are listed below. This technical documentation is available on the Motorola Semiconductor Product Sector Web site or is available through the Motorola Literature Distribution Center. Phone and fax numbers for ordering literature are listed on the back cover of this book and in our Accessing Data On-line section. Application Notes AN211A Field Effect Transistors in Theory and Practice AN419 UHF Amplifier Design Using Data Sheet Design Curves AN423 Field Effect Transistor RF Amplifier Design Techniques AN535 Phase-Locked-Loop Design Fundamentals AN548A Microstrip Design Techniques for UHF Amplifiers AN721 Impedance Matching Networks Applied to RF Power Transistors AN923 800 MHz Test Fixture Design AN955 A Cost Effective VHF Amplifier for Land Mobile Radios AN1022 Mechanical and Thermal Considerations in Using RF Linear Hybrid Amplifiers AN1024 RF Linear Hybrid Amplifiers AN1025 Reliability Considerations in Design and Use of RF Integrated Circuits AN1026 Extending the Range of an Intermodulation Distortion Test AN1027 Reliability/Performance Aspects of CATV Amplifier Design AN1032 How Load VSWR Affects Non-Linear Circuits AN1033 Match Impedances in Microwave Amplifiers AN1034 Three Balun Designs for Push-Pull Amplifiers AN1040 Mounting Considerations for Power Semiconductors AN1207 The MC145170 in Basic HF and VHF Oscillators AN1253 An Improved PLL Design Method Without n and AN1277 Offset Reference PLLs for Fine Resolution or Fast Hopping AN1526 RF Power Device Impedances: Practical Considerations AN1530 Motorola Advanced Amplifier Concept Package AN1539 An IF Communication Circuit Tutorial AN1602 3.6 V and 4.8 V GSM/DCS1800 Dual Band PA Application with DECT Capability Using Standard Motorola RFIC's AN1617 Mounting Recommendations for Copper Tungsten Flanged Transistors AN1639 Phase Noise Measurement Using the Phase Lock Technique AN1643 RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier AN1671 MC145170 PSpice Modeling Kit AN1673 Solder Reflow Mounting Method for the MRF286 and Similar Packages Applications and Product Literature 10-2 AN1674 AN1696 AN1697 AN1907 AN1908 AN1923 AN1938 AN1941 AN1944 AN1946 AN1949 AN1955 AN4005 Mounting Method with Mechanical Fasteners for the MRF286 and Similar Packages Broadband Intermodulation Performance Development Using the Rohde & Schwarz Vector Network Analyzer ZVR GSM900/DCS/1800 Dual-Band 3.6 V Power Amplifier Solution with Open Loop Control Scheme Surface Mount Solder Attach Method for the MRF9045MR1 in the TO-270 Plastic RF Package Solder Mounting Method for the MRF19090S and Similar Packages Mounting Method with Mechanical Fasteners for the MRF19090 and Similar Packages Sensitivity of High Power RF Transistors to Source and Output Loads Modeling Thermal Effects in RF LDMOS Transistors Generating Temperature-Dependent IV Curves Using ADS Interfacing Motorola's MC13190 2.4 GHz Transceiver IC with HC08 Family MCU's Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages Thermal Measurement Methodology of RF Power Amplifiers Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Article Reprints AR164 AR254 AR510 AR511 AR579 AR581 AR612 AR624 AR628 AR629 Good RF Construction Practices and Techniques Phase-Locked Loop Design Articles VSWR Protection of Solid State RF Power Amplifiers Biasing Solid State Amplifiers to Linear Operation CAD of a Broadband, Class-C 65 Watt UHF Power Amplifier Procedure Performs Thermal Measurements on Pulsed Devices Plastic Packages Hold Power RF MOSFETs Aluminum-Based Metallization Enhances Device Reliability Impedance Measurements for High Power RF Transistors Using the TRL Method Digital Predistortion Techniques for RF Power Amplifiers with CDMA Applications MOTOROLA WIRELESS RF PRODUCT DEVICE DATA Engineering Bulletins Product Literature EB38 DL110/D DL209/D EB105 EB209 EB211 Measuring the Intermodulation Distortion of Linear Amplifiers A 30 Watt, 800 MHz Amplifier Design Mounting Method for RF Power Leadless Surface Mount Transistors Thermal Management and Solder Mounting Method for the MRF286, 60 Watt Power Device in a CuW (Copper Tungsten) Base Package MOTOROLA WIRELESS RF PRODUCT DEVICE DATA SG46/D Wireless RF Product Device Data Library CATV Distribution Amplifier Module Device Data Book Wireless RF Product Selector Guide Applications and Product Literature 10-3 Applications and Product Literature 10-4 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd. Silicon Harbour Centre, 2 Dai King Street Tai Po Industrial Estate, Tai Po, N.T. Hong Kong 852-26668334 HOME PAGE: http://www.motorola.com/semiconductors Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the U.S. Patent and Trademark Office. All other product or service names are the property of their respective owners. (c) Motorola, Inc. 2003 DL110/D Rev. 14 2/2003