© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 1 mA 250 V
VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V
IGSS VGS = ±20 V DC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 50 µA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 33 mΩ
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Features
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times
Applications
•Motor controls
•DC choppers
•Switched-mode power supplies
Advantages
•Easy to mount with one screw
(isolated mounting screw hole)
•Space savings
•High power density
DS98953A(11/03)
High Current
MegaMOSTM
FET
N-Channel Enhancement Mode
Symbol Test conditions Maximum ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1.0 MΩ250 V
VGS Continuous ±20 V
VGSM Transient ±3 0 V
ID25 TC= 25°C MOSFET chip capability 80 A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 320 A
IAR TC= 25°C80A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 540 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
MdMounting torque 0.7/6 Nm/lb.in.
Weight TO-264 10 g
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate D = Drain
S = Source Tab = Drain
IXTK 80N25 VDSS = 250 V
ID25 = 80 A
RDS(on) = 33m
ΩΩ
ΩΩ
Ω
Preliminary Data Sheet
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IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 40 56 S
Ciss 6000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1125 pF
Crss 420 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 ns
td(off) RG = 1.0 Ω (External) 88 ns
tf24 ns
Qg(on) 240 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 nC
Qgd 110 nC
RthJC 0.23 K/W
RthCK 0.15 K/W
Source-Drain Diode Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 80 A
ISM Repetitive; pulse width limited by TJM 320 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25A, -di/dt = 100 A/µs, VR = 100V 300 ns
Qrr 3.0 µC
IXTK 80N25
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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© 2003 IXYS All rights reserved
IXTK 80N25
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
180
200
012345678910
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
012345
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
00.511.5 22.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 4. R
DS(on)
Norm alized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 80A
I
D
= 40A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS (on)
Normalized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 80N25
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - p
F
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 125V
I
D
= 40A
I
G
= 10mA
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
44.555.566.5 77.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig . 12. For w ar d Bias Safe
Operating Area
1
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
25µs
1ms
DC
T
C
= 25ºC
R
DS
(on)
Limit
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© 2003 IXYS All rights reserved
Fig. 13. Forw ard Biase d Safe Ope rating Are a (FBSOA)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
1 10 100 1000
Pulse Width - milliseconds
R (th) J C - (ºC/W)
IXTK 80N25
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