CPH6350-TL-E - ON Semiconductor - Datasheet.Directory

CPH6350

No. A1529-1/7

Features

• 4V drive

• Low ON-resistance

• Protection diode in

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --30 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID--6 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --24 A

Allowable Power Dissipation PD

When mounted on ceramic substrate (900mm

×0.8mm)

1.6 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions

unit : mm (typ)

7018A-003

Ordering number : ENA1529A

71 112 TKIM TC-00002780/80509PE TKIM TC-00002052

SANYO Semiconductors

DATA SHEET

CPH6350

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package : CPH6

• JEITA, JEDEC : SC-74, SOT-26, SOT-457

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL Marking

Electrical Connection

1, 2, 5, 6

LOT No.

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : CPH6

321

645

2.9

0.05

0.4

2.8

1.6

0.2

0.6 0.6

0.9

0.2

0.15

0.95

CPH6350-TL-E

CPH6350-TL-W

CPH6350

No. A1529-2/7

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V

Zero-Gate Voltage Drain Current IDSS V

DS=--30V, VGS=0V -- 1 μA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA

Cutoff Voltage VGS(off) VDS=--10V, ID=-- 1mA --1.2 --2.6 V

Forward T ransfer Admittance | yfs |VDS=--10V, ID=-- 3A 5.4 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=--3A, VGS=--10V 33 43 mΩ

RDS(on)2 ID=--1.5A, VGS=--4.5V 58 82 mΩ

RDS(on)3 ID=--1.5A, VGS=--4V 61 86 mΩ

Input Capacitance Ciss VDS=--10V, f=1MHz 600 pF

Output Capacitance Coss 145 pF

Reverse Transfer Capacitance Crss 110 pF

Turn-ON Delay Time td(on)

See speciﬁ ed Test Circuit.

7.4 ns

Rise Time tr 27 ns

Turn-OFF Delay Time td(off) 62 ns

Fall Time tf45 ns

Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--6A 13 nC

Gate-to-Source Charge Qgs 1.8 nC

Gate-to-Drain “Miller” Charge Qgd 3.2 nC

Diode Forward Voltage VSD IS=--6A, VGS=0V --0.87 --1.2 V

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

CPH6350-TL-E CPH6 3,000pcs./reel Pb Free

CPH6350-TL-W CPH6 3,000pcs./reel Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G 50Ω

ID= --3A

RL=5Ω

VDD= --15V

VOUT

CPH6350

VIN

--10V

VIN

CPH6350

No. A1529-3/7

ID -- VGS

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

ID -- VDS

Drain Current, ID -- A

--2

--1

--9

--3

--4

--6

--7

--5

--8

--0.5

--1.0

--2.0

--2.5

--1.5

--3.0

--1.0--0.8--0.6--0.1 --0.2 --0.4 --0.9--0.7--0.3 --0.5

IT14855

0 --1.0--0.5 --2.0--1.5 --3.0--2.5 --3.5 --4.0

IT14856

Ta=75°C

--25°C

VGS= --2.5V

VDS= --10V

--3.0V

--3.5V

--18.0V

25°C

--10.0V

--4.0V

--6.0V

--4.5V

Gate-to-Source Voltage, VGS -- V

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Ambient Temperature, Ta -- °C

RDS(on) -- TaRDS(on) -- VGS

IS -- VSD

Source Current, IS -- A

Diode Forward Voltage, VSD -- V

Ciss, Coss, Crss -- VDS

Ciss, Coss, Crss -- pF

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

| yfs | -- ID

Forward T ransfer Admittance, | yfs | -- S

SW Time -- ID

Switching Time, SW Time -- ns

Drain Current, ID -- A

--60

100

--40 --20 0 20 40 60 80 100 120 140 160

VGS= --4.5V, ID= --1.5A

VGS= --10.0V, ID= --3.0A

IT14858

120

--2

160

--4

200

100

140

180

--6 --8 --12--10 --14 --16

Ta=25°C

ID= --1.5A

--3.0A

IT14857

--20--5

1000

100

--15--10 --25 --30

f=1MHz

IT14862

Ciss

Coss

Crss

--0.1

100

--1.0

222357 --10

357

IT14861

td(on)

VDD= --15V

VGS= --10V

td(off)

--0.001 --0.4 --0.6 --0.8 --1.0 --1.2--0.2

--0.01

--1.0

--0.1

VGS=0V

--0.01

0.1

--0.1

23 57 2 --1.0

357 2

1.0

2VDS= --10V

IT14859 IT14860

Ta= --25°C

--25°C

25°C

Ta=75°C

25°C

VGS= --4.0V, ID= --1.5A

357

--10

CPH6350

No. A1529-4/7

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-Source Voltage, VGS -- V

--1

--2

--3

--4

--5

--6

--7

--8

--10

--9

1312 4 6 8 10 12

VDS= --10V

ID= --6A

IT14863 IT14864

--0.01

--10

--1.0

--0.1

--10--1.0

23 57 23 57 23 5 23 577

--0.1--0.01

ID= --6A

IDP= --24A (PW≤10μs)

Operation in this

area is limited by RDS(on).

100ms

10ms

1ms

100μs

DC operation (Ta=25°C)

Ta=25°C

Single pulse

When mounted on ceramic substrate (900mm2×0.8mm)

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- W

020 40 60

1.6

1.8

0.4

1.2

0.8

1.4

0.2

1.0

0.6

2.0

140100 120 160

IT14865

When mounted on ceramic substrate

(900mm2×0.8mm)

CPH6350

No. A1529-5/7

Embossed Taping Speciﬁ cation

CPH6350-TL-E, CPH6350-TL-W

CPH6350

No. A1529-6/7

Outline Drawing Land Pattern Example

CPH6350-TL-E, CPH6350-TL-W

Mass (g) Unit

0.015

* For reference

mm Unit: mm

0.6

2.4 1.4

0.95 0.95

CPH6350

No. A1529-7/7PS

This catalog provides information as of July, 2012. Speciﬁ cations and information herein are subject

to change without notice.

Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

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