UF2001UF2007 VISHAY 2.0A UltraFast Rectifier Features Diffused junction Ultrafast switching for high efficiency High current capability and low forward voltage drop @ Surge overload rating to 60A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings Vishay Lite-On Power Semiconductor 14 421 Tj = 25C Repetitive peak reverse voltage UF2001 Vrru 50 Vv =Working peak reverse voltage UF2002 =VawM 100 Vv =DC Blocking voltage UF2003 =VpR 200 V UF2004 400 Vv UF2005 600 Vv UF2006 800 Vv UF2007 1000 Vv Peak forward surge current lesm 60 A Average forward current Ta=50C lFay 2 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics T; = 25C Forward voltage IF=2A UF20012003 Ve 1 Vv UF2004 Ve 1.3 Vv UF20052007 Ve 1.7 Vv Reverse current Tp=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, UF20012004 ter 50 ns rr=0.25A UF20052007 tre 75 | ns Diode capacitance VpR=4V, f=1MHz UF20012004 Cp 50 pF UF2005-2007 Cp 30 pF Thermal resistance RthJA 50 KAW junction to ambient Rev. A2, 24-Jun-98UF2001UF2007 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) 2.0 Single phase half-wave 60 Hz resistive or inductive load 1.6 1.2 0.8 04 leay Average Forward Current (A) 0 25 50 75 100 125 150 175 200 15466 Tamb Ambient Temperature (C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 10 UF2004 ~ UF2001-UF2003 < o 10 5 Oo o o UF2005-UF2007 5 ol I Ss Tj = 25C IF Pulse Width = 300 ps 0.01 0.6 0.8 1.0 1.2 14 15467 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage > 60 < e 5 Oo 40 2 a no Z wo = rf 20 x o oO a ls ie = 0 15468 VISHAY \ 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 100 Cp Diode Capacitance ( pF ) 18469 10 10 100 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Rev. A2, 24-Jun-98UF2001UF2007 VISHAY Dimensions in mm A U0-15 Dim Min Max A 25.40 - B 5.90 1.62 C 0.686 0.689 U 2.60 3.6 All Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 0.4 grams Mounting position: any Marking: type number Vishay Lite-On Power Semiconductor technical drawings according to DIN specifications 14442 Rev. A2, 24-Jun-98UF2001UF2007 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98