Philips Semiconductors Silicon diffused power transistors GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. Objective specification BUX86P; BUX87P QUICK REFERENCE DATA SYMBOL |PARAMETER CONDITIONS TYP. MAX. UNIT BUX! 86P | 87P Vecesm Collector-emitter voltage peak value Vee z OV 800 | 1000 Vv cEO Collector-emitter voltage (open base) 400 | 450 Vv Voesat Collector-emitter saturation voltage Io = 0.2 A; lp = 20 MA - 1 Vv c Collector current (DC) - 0.5 A lon Collector current peak value - 1 A Pret Total power dissipation Ti 3 25C - 42 W th Fail time Ig = 0.2 A; Ipjon) = 20 MA 0.4 - ys PINNING - SOT82 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 5 Cc 1 |base 2 {collector b 3 jemitter 127 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT BUX| 86P | 87P Voeesm Collector-emitter voltage peak value Ver = OV - B00 | 1000 Vv CEO Collector-emitter voltage (open base) - 400 450 Vv Veno Emitter-base voltage (open collector) - 5 v lo Collector current pea - 0.5 A lou Coilector current (peak value) t, = 2 ms - 1 A lp Base current (DC) - 0.2 A low Base current (peak value) - 0.3 A clan Reverse base current (peak value)' - 0.3 A Prt Total power dissipation Tip 3 25 C - 42 W Taig Storage temperature -65 150 C T Junction temperature - 150 C 1 Turn-off current. MB 71108eb 0077640 4951 July 1994 435 Rav 1.000 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Objective specification Silicon diffused power transistors BUX86P; BUX87P THERMAL RESISTANCES SYMBOL | PARAMETER CONDITIONS TYP. | MAX. | UNIT Rin jab Junction to mounting base - 3 KW Rinja Junction to ambient in free air 100 - KAW STATIC CHARACTERISTICS Tp = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT les Vee = 9 -V; Veg = Veesmmax - - 100 PA logs Vee = 9. V; Vor = Veesmmaxi - - 1.0 | mA T,=125C leso Emitter cut-off current Vea =5V:I.=0A - - 1 mA CEsat Collector-emitter saturation voltages }l, = 0.1 A; l,=10mA - - 0.8 Vv CEsat I; = 0.2 A; lp = 20 mA - - 1 V BEsat Base-emitter saturation voltage I, = 0.2 A: 1, =20 mA - - 1 Vv FE DC current gain Ip = 50 MA; Vee = 5 V 26 50 125 Voeosust Collector-emitter sustaining voltage |1, = 100 mA; BUX86P| 400 - - Vv lso = 0;L =25mH BUX87P| 450 - - Vv DYNAMIC CHARACTERISTICS Tn = 25 "C unless otherwise specified SYMBOL |PARAMETER CONDITIONS TYP. | MAX. | UNIT Switching times (resistive load) 1, = 0.2 A; Ip, = 20 MA; -lag = 40 MA; Voc = 250 V bon Turn-on time 25 0.5 ys t, Turn-off storage time 2 3.5 ps t, Turn-off fall time 0.4 - us t Turn-off fall time Typ = 95 C - 1.3 us MM 7110826 0077641 328 Rev 1.000 July 1994 436 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Sermiconductors Objective specification Silicon diffused power transistors MECHANICAL DATA BUX86P; BUX87P Dimensions in mm Net Mass: 0.8 g mounting 2.8 base \ 2.3 max * c- max -| wt 1.2 15.3 min Lt 1 |_J I { 0.5 i i | | 1 | i _ | er 2.29 | 0.88 1) Lead dimensions within this max zone uncontrolled. Fig.1. SOT82; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for SOT82 envelopes. MH 7110826 0077842 264 Rev 1.000 July 1994 437 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.