2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2084(L), 2SK2084(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Ratings 20 20 7 28 7 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 20 20 Typ -- -- Max -- -- Unit V V Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF -- -- 1.0 -- -- 5 -- -- -- -- -- -- -- -- -- -- -- -- 0.04 0.058 9 800 680 165 15 60 100 80 0.9 80 10 100 2.5 0.053 0.075 -- -- -- -- -- -- -- -- -- -- A A V S pF pF pF ns ns ns ns V ns Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 7 trr Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 16 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 ID = 4 A, VGS = 4 V*3 ID = 4 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 5 IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 20 A / s 2SK2084(L), 2SK2084(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 1 m = s 10 ms DC (1 (T O sh c = pe ot) Operation in ra 2 5 tio this area is n C limited by RDS(on) ) 3 1 Ta = 25C 50 100 150 0.1 0.3 200 30 Typical Transfer Characteristics 20 Pulse Test Drain Current ID (A) 10 V 6V 4V 3.5 V 8 3V 4 VGS = 2.5 V 2 4 6 8 16 VDS = 10 V Pulse Test 12 8 Tc = 75C 25C -25C 4 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.4 0.3 ID = 5 A 0.2 2A 0.1 1A 0 10 Typical Output Characteristics 12 0 3 Drain to Source Voltage VDS (V) 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) () 16 1 Case Temperature TC (C) 20 Drain Current ID (A) 100 s PW 10 0.3 0 Drain to Source Saturation Voltage VDS (on) (V) 10 s 0.2 Pulse Test 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK2084(L), 2SK2084(S) 0.20 Pulse Test 0.16 0.12 5A 1A 2A VGS = 4 V 0.08 1A 2A 5A 0.04 10 V 0 -40 0 40 80 120 160 5 Tc = -25C 25C 75C 2 1 0.5 0.1 0.2 0.5 1 2 5 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10 10000 Capacitance C (pF) 100 50 di / dt = 20 A / s VGS = 0, Ta = 25C 20 0.5 1 2 5 100 Crss VGS = 0 f = 1 MHz 10 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 40 VGS VDD = 20 V 10 V 5V 16 12 30 VDS 8 10 0 Coss Reverse Drain Current IDR (A) 50 20 Ciss 1000 10 0.2 4 VDD = 20 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 0 40 200 td(off) Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) VDS = 10 V Pulse Test 10 Case Temperature TC (C) 200 Drain to Source Voltage VDS (V) 20 100 tf 50 20 10 0.1 VGS = 10 V VDD = 20 V PW = 5 s duty < 1 % 0.2 0.5 tr td(on) 1 2 Drain Current ID (A) 5 10 2SK2084(L), 2SK2084(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 10 V 5V 12 VGS = 0, -5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C 0.02 1 0.03 0.0 t ho lse PDM Pu D= 1s PW T PW T 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 10% 10% VDD = 20 V 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 10% tr 90% td(off) tf 2SK2084(L), 2SK2084(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 0.5 JEITA Package Code 2.3 0.2 0.55 0.1 1.2 0.3 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 4.7 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 0.5 5.4 0.5 (0.1) Unit: mm 2.3 0.2 0.55 0.1 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 JEITA Package Code 0.8 0.1 2.29 0.5 0.55 0.1 2SK2084(L), 2SK2084(S) Ordering Information Part Name 2SK2084L-E 2SK2084STL-E Quantity 3000 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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