123
TAB
TO-220
1
3
TAB
D PAK
2
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGB30H60DFB
STGP30H60DFB
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
STGB30H60DFB, STGP30H60DFB
Datasheet
DS10468 - Rev 3 - May 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 600 V
IC
Continuous collector current at TC = 25 °C 60
A
Continuous collector current at TC = 100 °C 30
ICP (1) Pulsed collector current 120
VGE
Gate-emitter voltage ±20
V
Transient gate-emitter voltage ±30
IF
Continuous forward current at TC = 25 °C 60
A
Continuous forward current at TC = 100 °C 30
IFP (1) Pulsed forward current 120
PTOT Total power dissipation at TC = 25 °C 260 W
TSTG Storage temperature range - 55 to 150
°C
TJOperating junction temperature range - 55 to 175
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 0.58
°C/W
RthJC Thermal resistance junction-case diode 2.08
RthJA Thermal resistance junction-ambient 62.5
STGB30H60DFB, STGP30H60DFB
Electrical ratings
DS10468 - Rev 3 page 2/21
2Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES Collector-emitter breakdown
voltage VGE = 0 V, IC = 2 mA 600 V
VCE(sat) Collector-emitter saturation
voltage
VGE = 15 V, IC = 30 A 1.55 2
V
VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75
VFForward on-voltage
IF = 30 A 2 2.6
V
IF = 30 A, TJ = 125 °C 1.7
IF = 30 A, TJ = 175 °C 1.6
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE= 25 V, f = 1 MHz, VGE = 0 V
- 3659 -
pF
Coes Output capacitance - 101 -
Cres Reverse transfer capacitance - 76 -
QgTotal gate charge
VCC = 520 V, IC = 30 A, VGE = 0 to 15 V
(see Figure 28. Gate charge test circuit)
- 149 -
nC
Qge Gate-emitter charge - 25 -
Qgc Gate-collector charge - 62 -
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
DS10468 - Rev 3 page 3/21
Table 5. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω (see Figure 27. Test circuit
for inductive load switching)
- 37 -
ns
trCurrent rise time - 14.6 -
(di/dt)on Turn-on current slope - 1643 - A/µs
td(off) Turn-off-delay time - 146 -
ns
tfCurrent fall time - 23 -
Eon (1) Turn-on switching energy - 383 -
µJ
Eoff (2) Turn-off switching energy - 293 -
Ets Total switching energy - 676 -
td(on) Turn-on delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C (see Figure 27.
Test circuit for inductive load switching)
- 35 -
ns
trCurrent rise time - 16.1 -
(di/dt)on Turn-on current slope - 1496 - A/µs
td(off) Turn-off-delay time - 158 -
ns
tfCurrent fall time - 65 -
Eon (1) Turn-on switching energy - 794 -
µJ
Eoff (2) Turn-off switching energy - 572 -
Ets Total switching energy - 1366 -
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 30 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/μs (see Figure 27. Test
circuit for inductive load switching)
- 53 - ns
Qrr Reverse recovery charge - 384 - nC
Irrm Reverse recovery current - 14.5 - A
dIrr/dt Peak rate of fall of reverse
recovery current during tb- 788 - A/µs
Err Reverse recovery energy - 104 - µJ
trr Reverse recovery time
IF = 30 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/µs, TJ = 175 °C
(see Figure 27. Test circuit for inductive
load switching)
- 104 - ns
Qrr Reverse recovery charge - 1352 - nC
Irrm Reverse recovery current - 26 - A
dIrr/dt Peak rate of fall of reverse
recovery current during tb- 310 - A/µs
Err Reverse recovery energy - 407 - µJ
STGB30H60DFB, STGP30H60DFB
Electrical characteristics
DS10468 - Rev 3 page 4/21
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
Ptot
150
100
0
050 TC (°C)
75
(W)
25 100 125 150
50
200
175
250
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141353FSR
Figure 2. Collector current vs case temperature
IC
60
40
20
0050 TC (°C)
75
(A)
25 100 125 150
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141346FSR
Figure 3. Output characteristics (TJ = 25 °C)
GIPG280120141156FSR
100
80
60
40
20
00 1 2 3 4 5
IC
(A)
VCE (V)
VGE =7 V
VGE =9 V
VGE =13 V
VGE =11 V
VGE =15 V
Figure 4. Output characteristics (TJ = 175 °C)
GIPG280120141206FSR
100
80
60
40
20
00 1 2 3 4 5
IC
(A)
VCE (V)
VGE =7 V
VGE =9 V
VGE =11 V
VGE =13 V
VGE =15 V
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
1.8
1.6
1.4
1.2
-50 0 TJ (°C)
(V)
50 100 150
2.2
2.0
VGE = 15 V
IC = 60 A
IC = 30 A
IC = 15 A
GIPG280120141440FSR
Figure 6. VCE(sat) vs collector current
VCE(sat)
1.6
1.4
1.2 15 30 IC (A)
(V)
45 60
2.2
2.0
1.8
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
2.4
GIPG280120141446FSR
STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)
DS10468 - Rev 3 page 5/21
Figure 7. Collector current vs switching frequency
GIPG280120141713FSR
80
60
40
20
0
100101102
IC
(A)
f (kHz)
TC = 80 °C
TC = 100 °C
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V,
RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C
Figure 8. Forward bias safe operating area
IC
100
10
1
0.11VCE(V)
(A)
10 100
10 µs
100 µs
1 ms
(single pulse TC= 25°C,
TJ ≤ 175°C; VGE=15V)
Vce(sat) limit
GIPG090720141330FSR
Figure 9. Transfer characteristics
GIPG280120141330FSR
100
80
60
40
20
05 7 9 11
IC
(A)
VGE (V)
Tj = 25 °C
Tj = 175 °C
VCE = 6 V
Figure 10. Diode VF vs forward current
VF
2.0
1.6
1.2
0.8
10 IF(A)
(V)
20
TJ= 175°C
30 40 50
TJ= 25°C
TJ= -40°C
60
2.8
2.4
GIPG090720141349FSR
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)
(norm)
0.8
0.7
0.6
-50 TJ(°C)
0 50 100 150
0.9
1.0
VCE = VGE, IC = 1 mA
AM16060v1
Figure 12. Normalized V(BR)CES vs junction temperature
V(BR)CES
(norm)
1.1
1.0
0.9
-50 TJ(°C)
0 50 100 150
IC= 2mA
AM16059v2
STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)
DS10468 - Rev 3 page 6/21
Figure 13. Capacitance variations
C
10 VCE (V)
(pF)
0.1 1 10
Cies
100
1000
Coes
Cres
100
GIPG090720141358FSR
Figure 14. Gate charge vs. gate-emitter voltage
IG = 1mA
VGE (V)
4
2
00Qg (nC)
40 80 120 160
6
8
10
12
14
VCC = 520 V, IC = 30 A
16
GIPG280120141455FSR
Figure 15. Switching energy vs collector current
E
0IC(A)
(µJ)
0 10 20
400
30 40
800
EON
1200
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
50
EOFF
1600
60
GIPG090720141414FSR
Figure 16. Switching energy vs gate resistance
GIPG090720141421FSR
1400
1200
1000
800
600
4000 10 20 30 40
E
(μJ)
RG (Ω)
VCC = 400 V, IC = 30 A,
VGE = 15 V, TJ = 175 °C Eon
Eoff
Figure 17. Switching energy vs temperature
E
0TJ(°C)
(µJ)
20 60
200
400
600
100 140
EOFF
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A
EON
800
GIPG090720141431FSR
Figure 18. Switching energy vs collector emitter voltage
GIPG090720141440FSR
1000
800
600
400
200
0
100 200 300 400 500
E
(μJ)
VCE (V)
Eon
Eoff
IC = 30 V, RG = 10 Ω,
VGE = 15 V, TJ = 175 °C
STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)
DS10468 - Rev 3 page 7/21
Figure 19. Switching times vs collector current
t
IC(A)
(ns)
010 20
130
tf
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
tdoff
10
tr
tdon
40 50
100
GIPG100720141533FSR
Figure 20. Switching times vs gate resistance
t
10 RG(Ω)
(ns)
0 10 20
100
30
tf
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
40
tdon
tdoff
tr
GIPG100720141549FSR
Figure 21. Reverse recovery current vs diode current
slope
Irm
0di/dt(A/µs)
(A)
0 500 1000
40
1500
IF = 30A, Vr = 400V
2000
60 =175°C
=25°C
20
TJ
TJ
2500
GIPG100720141607FSR
Figure 22. Reverse recovery time vs diode current slope
Figure 23. Reverse recovery charge vs diode current
slope
Qrr
0di/dt(A/µs)
(nC)
0 500 1000
1500
1500
IF = 30A, Vr = 400V
2000
2000 =175°C
=25°C
1000
TJ
TJ
500
GIPG110720140854FSR
Figure 24. Reverse recovery energy vs diode current
slope
Err
0di/dt(A/µs)
(µJ)
0 500 1000
600
1500
IF = 30A, Vr = 400V
2000
1000
=175°C
=25°C
200
TJ
TJ
400
800
GIPG110720140859FSR
STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)
DS10468 - Rev 3 page 8/21
Figure 25. Thermal impedance for IGBT
10 10 10 10 10 tp(s)
-5 -4 -3 -2 -1
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Figure 26. Thermal impedance for diode
STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)
DS10468 - Rev 3 page 9/21
3Test circuits
Figure 27. Test circuit for inductive load switching
A A
C
E
G
B
R
G
+
-
G
C3.3
µF 1000
µF
L=100 µH
V
CC
E
D.U.T
B
AM01504v1
Figure 28. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 29. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICtd(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
Figure 30. Diode reverse recovery waveform
t
GADG180720171418SA
10%
VRRM
dv/dt
di/dt
IRRM
IF
trr
tstf
Qrr
IRRM
STGB30H60DFB, STGP30H60DFB
Test circuits
DS10468 - Rev 3 page 10/21
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
STGB30H60DFB, STGP30H60DFB
Package information
DS10468 - Rev 3 page 11/21
4.1 D²PAK (TO-263) type A2 package information
Figure 31. D²PAK (TO-263) type A2 package outline
0079457_A2_26
STGB30H60DFB, STGP30H60DFB
D²PAK (TO-263) type A2 package information
DS10468 - Rev 3 page 12/21
Table 7. D²PAK (TO-263) type A2 package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°
Figure 32. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
STGB30H60DFB, STGP30H60DFB
D²PAK (TO-263) type A2 package information
DS10468 - Rev 3 page 13/21
4.2 D²PAK packing information
Figure 33. D²PAK tape outline
STGB30H60DFB, STGP30H60DFB
D²PAK packing information
DS10468 - Rev 3 page 14/21
Figure 34. D²PAK reel outline
A
D
B
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
C
N
40mm min.
access hole
at slot location
T
AM06038v1
Table 8. D²PAK tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
STGB30H60DFB, STGP30H60DFB
D²PAK packing information
DS10468 - Rev 3 page 15/21
4.3 TO-220 type A package information
Figure 35. TO-220 type A package outline
0015988_typeA_Rev_22
STGB30H60DFB, STGP30H60DFB
TO-220 type A package information
DS10468 - Rev 3 page 16/21
Table 9. TO-220 type A package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STGB30H60DFB, STGP30H60DFB
TO-220 type A package information
DS10468 - Rev 3 page 17/21
5Ordering information
Table 10. Order codes
Order code Marking Package Packing
STGB30H60DFB GB30H60DFB D²PAK Tape and reel
STGP30H60DFB GP30H60DFB TO-220 Tube
STGB30H60DFB, STGP30H60DFB
Ordering information
DS10468 - Rev 3 page 18/21
Revision history
Table 11. Document revision history
Date Revision Changes
07-Aug-2014 1 Initial release.
28-Oct-2015 2 Updated Figure 23 and Section 5.
Minor text changes.
23-May-2019 3
Modified Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics
(TJ = 175 °C), Figure 9. Transfer characteristics, Figure 7. Collector current vs
switching frequency, Figure 18. Switching energy vs collector emitter voltage.
Minor text changes.
STGB30H60DFB, STGP30H60DFB
DS10468 - Rev 3 page 19/21
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits ......................................................................10
4Package mechanical data .........................................................11
4.1 D²PAK (TO-263) type A2 package information .....................................11
4.2 D²PAK packing information .....................................................13
4.3 TO-220 type A package information ..............................................15
5Ordering information .............................................................18
Revision history .......................................................................19
STGB30H60DFB, STGP30H60DFB
Contents
DS10468 - Rev 3 page 20/21
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© 2019 STMicroelectronics – All rights reserved
STGB30H60DFB, STGP30H60DFB
DS10468 - Rev 3 page 21/21