1C3M0032120K Rev. -, 06-2019
C3M0032120K
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
Benets
• Reduce switching losses and minimize gate ringing
• Higher system efciency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch
Package
Part Number Package Marking
C3M0032120K TO 247-4 C3M0032120K
V
DS
1200 V
I
D
@
25˚C
63 A
R
DS(on)
32 mΩ
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA
VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1
VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2
ID Continuous Drain Current
63
A
VGS = 15 V, TC = 25˚C
Fig. 19
48 VGS = 15 V, TC = 100˚C
ID(pulse) Pulsed Drain Current 120 A Pulse width tP limited by Tjmax
PDPower Dissipation 283 W TC=25˚C, TJ = 175 ˚C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -40 to
+175 ˚C
TLSolder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
Drain
(Pin 1, TAB)
Power
Source
(Pin 2)
Driver
Source
(Pin 3)
Gate
(Pin 4)
1
D
TAB
Drain
2 3 4
S S G
2C3M0032120K Rev. -, 06-2019
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA
VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 V VDS = VGS, ID = 11.5 mA Fig. 11
2.0 V VDS = VGS, ID = 11.5 mA, TJ = 175ºC
IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance 23 32 43 mΩVGS = 15 V, ID = 40 A Fig. 4,
5, 6
57.6 VGS = 15 V, ID = 40 A, TJ = 175ºC
gfs Transconductance 27 SVDS= 20 V, IDS= 40 A Fig. 7
22 VDS= 20 V, IDS= 40 A, TJ = 175ºC
Ciss Input Capacitance 3357
pF
VGS = 0 V, VDS = 1000 V
f = 100 kHz
VAC = 25 mV
Fig. 17,
18
Coss Output Capacitance 129
Crss Reverse Transfer Capacitance 8
Eoss Coss Stored Energy 76 μJ Fig. 16
EON Turn-On Switching Energy (SiC Diode FWD) 367 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,
RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC Fig. 26
EOFF Turn Off Switching Energy (SiC Diode FWD) 123
EON Turn-On Switching Energy (Body Diode FWD) 955 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,
RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC Fig. 26
EOFF Turn Off Switching Energy (Body Diode FWD) 107
td(on) Turn-On Delay Time 25
ns
VDD = 800 V, VGS = -4 V/15 V
RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7
Timing relative to VDS, Inductive load
Fig. 27
trRise Time 18
td(off) Turn-Off Delay Time 32
tfFall Time 9
RG(int) Internal Gate Resistance 1.7 Ωf = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 40
nC
VDS = 800 V, VGS = -4 V/15 V
ID = 40 A
Per IEC60747-8-4 pg 21
Fig. 12
Qgd Gate to Drain Charge 34
QgTotal Gate Charge 118
3C3M0032120K Rev. -, 06-2019
Reverse Diode Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage
4.6 V VGS = -4 V, ISD = 20 A, TJ = 25 °C Fig. 8,
9, 10
4.2 V VGS = -4 V, ISD = 20 A, TJ = 175 °C
ISContinuous Diode Forward Current 62 A VGS = -4 V, TC = 25˚C Note 1
IS, pulse Diode pulse Current 120 A VGS = -4 V, pulse width tP limited by Tjmax Note 1
trr Reverse Recover time 27 ns
VGS = -4 V, ISD = 40 A, VR = 800 V
dif/dt = 2250 A/µs, TJ = 175 °C Note 1Qrr Reverse Recovery Charge 478 nC
Irrm Peak Reverse Recovery Current 27 A
Thermal Characteristics
Symbol Parameter Typ. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.45 °C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40
4C3M0032120K Rev. -, 06-2019
Figure 2. Output Characteristics TJ = 25 ºC
Typical Performance
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 1. Output Characteristics TJ = -40 ºC
Figure 3.
Output Characteristics TJ = 175 ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-40 -20 020 40 60 80 100 120 140 160 180
On Resistance, R
DS On
(P.U.)
Junction Temperature, T
J
(°C)
Conditions:
I
DS
= 40 A
V
GS
= 15 V
t
p
< 200 µs
0
10
20
30
40
50
60
70
80
020 40 60 80 100 120 140 160
On Resistance, RDS On (mOhms)
Drain-Source Current, IDS (A)
Conditions:
VGS = 15 V
tp< 200 µs
TJ= 175 °C
TJ= -40 °C
TJ= 25 °C
Figure 4. Normalized On-Resistance vs. Temperature
0
10
20
30
40
50
60
70
80
90
-40 -5 30 65 100 135 170
On Resistance, RDS On (mOhms)
Junction Temperature, TJ(°C)
Conditions:
IDS = 40 A
tp< 200 µs
VGS = 15 V
VGS = 13 V
VGS = 11 V
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
0
20
40
60
80
100
120
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 175 °C
tp = < 200 µs
V
GS
= 13V V
GS
= 11V
V
GS
= 9V
V
GS
= 15V
0
20
40
60
80
100
120
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 7V
V
GS
= 13V V
GS
= 11V
V
GS
= 9V
V
GS
= 15V
0
20
40
60
80
100
120
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= -40 °C
tp = < 200 µs
V
GS = 7V
VGS = 13V
VGS = 11V
VGS = 9V
VGS = 15V
5C3M0032120K Rev. -, 06-2019
Typical Performance
Figure 8. Body Diode Characteristic at -40 ºC
Figure 9. Body Diode Characteristic at 25 ºC
0
20
40
60
80
100
120
140
160
0 2 4 6 8 10 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 25 °C
T
J
= -40 °C
T
J
= 175 °C
-120
-100
-80
-60
-40
-20
0
-9 -8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= -40°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
-120
-100
-80
-60
-40
-20
0
-9 -8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
-120
-100
-80
-60
-40
-20
0
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 175°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-40 -5 30 65 100 135 170
Threshold Voltage, V
th
(V)
Junction Temperature T
J
(°C)
Conditons
V
GS
= V
DS
I
DS
= 11.5 mA
Figure 10. Body Diode Characteristic at 175 ºC
-4
0
4
8
12
16
020 40 60 80 100 120
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Conditions:
I
DS
= 40 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
6C3M0032120K Rev. -, 06-2019
Typical Performance
Figure 15. 3rd Quadrant Characteristic at 175 ºC
Figure 13. 3rd Quadrant Characteristic at -40 ºC
-120
-100
-80
-60
-40
-20
0
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= -40 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
-120
-100
-80
-60
-40
-20
0
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
-120
-100
-80
-60
-40
-20
0
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 175 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
20
40
60
80
100
120
0200 400 600 800 1000 1200
Stored Energy, E
OSS
(µJ)
Drain to Source Voltage, V
DS
(V)
Figure 16. Output Capacitor Stored Energy
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
1
10
100
1000
10000
050 100 150 200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
rss
1
10
100
1000
10000
0200 400 600 800 1000 1200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
rss
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1200V)
7C3M0032120K Rev. -, 06-2019
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, ZthJC (oC/W)
Time, tp(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Typical Performance
0
10
20
30
40
50
60
70
80
-55 -30 -5 20 45 70 95 120 145 170
Drain-Source Continous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 175 °C
0
50
100
150
200
250
300
350
-55 -30 -5 20 45 70 95 120 145 170
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 175 °C
0.01
0.10
1.00
10.00
100.00
0.1 110 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
100 ms
Limited by R
DS On
Figure 22. Safe Operating Area
Figure 21. Transient Thermal Impedance
(Junction - Case)
0
100
200
300
400
500
600
700
800
010 20 30 40 50 60 70
Switching Loss (µJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
V
GS
= -4V/+15V
FWD = C3M0032120K
L = 65.7 μH
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
0
200
400
600
800
1000
1200
010 20 30 40 50 60 70
Switching Loss (µJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 2.5 Ω
V
GS
= -4V/+15V
FWD = C3M0032120K
L = 65.7 μH
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
8C3M0032120K Rev. -, 06-2019
Typical Performance
0
500
1000
1500
2000
2500
0 5 10 15 20 25
Switching Loss (µJ)
External Gate Resistor RG(ext) (Ohms)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 40 A
V
GS
= -4V/+15 V
FWD = C3M0032120K
L = 65.7 μH
0
20
40
60
80
100
120
0 5 10 15 20 25
Switching Times (ns)
External Gate Resistor RG(ext) (Ohms)
t
d(off)
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 40 A
V
GS
= -4V/+15 V
FWD = C3M0032120K
t
r
t
f
t
d(on)
0
200
400
600
800
1000
1200
025 50 75 100 125 150 175 200
Switching Loss (µJ)
Junction Temperature, T
J
(°C)
E
Off
E
On
E
Total
Conditions:
I
DS
= 40 A
V
DD
= 800 V
R
G(ext)
= 2.5 Ω
V
GS
= -4V/+15 V
L = 65.7 μH
FWD = C3M0032120K
----FWD = C4D20120A
E
On (FWD Diode)
E
Off (FWD Diode)
E
Total (FWD Diode)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 27. Switching Times vs. RG(ext)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Figure 28. Switching Times Denition
9C3M0032120K Rev. -, 06-2019
Test Circuit Schematic
L
Q
2
D.U.T
Q
1
VGS= - 4 V
R
G
R
G
C
DC
V
DC
KS
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
10 C3M0032120K Rev. -, 06-2019
Package Dimensions
Package TO-247-4L
BASE METAL
SECTION "F-F", "G-G" AND "H-H"
SCALE: NONE
E2
E
E3 E4
E1
11 C3M0032120K Rev. -, 06-2019
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
MIN
MILLIMETERS
SYM MAX
A
A1
A2
b'
b
b3
b4
c'
c
D
D1
D2
E
4.83 5.21
2.29 2.54
1.91 2.16
1.07 1.28
1.07 1.33
1.07 1.60
1.07 1.50
0.55 0.65
0.55 0.68
23.30 23.60
16.25 17.65
0.95 1.25
15.75 16.13
b1
b2
2.39
2.39
2.94
2.84
b5
b6
2.39
2.39
2.69
2.64
Recommended Solder Pad Layout
MIN
MILLIMETERS
SYM MAX
E1
E2
E3
E4
e
N
L
L1
øP
Q
S
T
W
X
13.10 14.15
3.68 5.10
1.00 1.90
12.38 13.43
2.54 BSC
4
17.31 17.82
3.97 4.37
3.51 3.65
5.49 6.00
6.04 6.30
17.5° REF.
3.5 ° REF.
4° REF.
e1 5.08 BSC
L2 2.35 2.65
Package Dimensions
Package TO-247-4L
1212 C3M0032120K Rev. - , 06-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems.
Notes
Related Links
• SPICE Models: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support