CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.3A, RDS(ON) = 8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 650 Units V VGS 30 V ID 1.3 A IDM 3.9 A 35 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range S 0.29 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RJC 3.5 W/ C Thermal Resistance, Junction-to-Ambient RJA 50 W/ C 2004.November http://www.cetsemi.com 6-6 CED02N6A/CEU02N6A Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 650 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 25 A IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 8.0 Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250A 2 RDS(on) VGS = 10V, ID = 0.8A 6.2 gFS VDS = 50V, ID = 0.8A 0.9 S 176 pF 48 pF 21 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18 11 27 ns 16 40 ns 28 35 ns Turn-On Fall Time tf 16 40 ns Total Gate Charge Qg 15 21 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 1A, VGS = 10V 2.4 nC 8.7 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 6-7 0.8 A 1.5 V 6 CED02N6A/CEU02N6A 1.8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7V 1.5 VGS=6V 1.2 0.9 0.6 VGS=5V TJ=150 C 10 0 -55 C 0.3 0.0 10 0 2 4 6 8 10 2 10 Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 8 Figure 1. Output Characteristics Ciss 150 100 Coss 50 Crss 0 0 5 10 15 20 25 3.0 2.5 ID=0.8A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 6 VGS, Gate-to-Source Voltage (V) 200 ID=250A 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 VDS, Drain-to-Source Voltage (V) 250 1.2 -1 12 300 1.3 1.VDS=40V 2.Pulse Test 25 C VGS=4V VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 0 -1 -2 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 6-8 15 VDS=480V ID=1A RDS(ON)Limit 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED02N6A/CEU02N6A 9 6 3 0 0 5 10 15 10 10ms DC 10 10 20 100s 1ms 0 -1 6 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 t2 0.02 0.01 1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = P* RJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 6-9 10 3 10 4 3