~~ = 4G DE Bodo ?c54 Uusausse 4 , [ sae725a MOTOROLA SC {XSTRS/R F) 96D 80338 _ Dp . - ToIS~tT 2N4898 SEMICONDUC oO | TECHNICAL DATA 2N4900 i MEDIUM-POWER PNP SILICON TRANSISTORS 4 AMPERE ... designed for driver circuits, switching, and amplifier applications. GENERAL PURPOSE : These high-performance devices feature: POWER TRANSISTORS | l Low Saturation Voltage VCE(sat) = 0.6 V max @ I = 1.0 Amp 40-80 VOLTS I - : 25 WATTS 1 @ Excellent Safe Operating Area \ Gain Specified to [c = 1.0 Ampere 2N4900 Complementary to NPN 2N4912 <> MAXIMUM RATINGS Rating Symbol! 2N4898 | 2N4839 | ZN4900 | Unit Collector-Emitter Voltage Vceo 40 60 80 Vde Collector-Base Voltage Vos 40 60 80 Vde Emitter-Base Voltage VeB ~<_-_- 5.0 -_ | Vdc Collector Current Continuous* Icg* <__ 1.0 | Ade <<|__ 4.0 -__> u-. Base Current IB _\_ 1.0 _ | Adc Total Device Dissipation Tg = 25C Pp __|__ 25 __> _ | Watts P -_ B c Derate above 25C <_- 0.143 | w/c Ly ween ene Operating & Storage Junction Ta. Tstg | t -65 to +200 p % 1 i ce a 1 Temperature Range E Lp K SEATING PLANE ! THERMAL CHARACTERISTICS STYLE I: PIN t. BASE Characteristic Symbot Max Unit 2. EMITTER Thermal Reistance, Junction to Case I 7.0 ocw CASE: COLLECTOR F The 1.0 Amp maximum Ic value is based upon JEDEC current gain requirements. Jj| The 4.0 Amp maximum value is based upon actual current-handling capability of the device (see Figure 5). a - | d FIGURE 1 POWER-TEMPERATURE DERATING CURVE H T | 20 a 20 = = = S15 = 8 = 10 S . = 2 5 i i ; = = i 0 : = = 0 2 40 60 8 100 120 140 160 180 200 All JEDEC Dimensions and and Notes Apply. i CASE 80-02 Tc, CASE TEMPERATURE (C) ASE 80-05 Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. 3-724b DE pesbress 00803349 & i [ 6367254 MOTOROLA. SC_(XSTRS/R F) 96D 80339 OD i 2N4898 thru 2N4900 - T-93-/9 ELECTRICAL CHARACTERISTICS. a = 25C untess otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* VCEQ(aus)* Vde (Ig =0,1 Ade, Ib = 0) 2N4698 40 - 2N4899 60 - 2N4900 80 - Collector Cutoff Current - ] Vor = 20 Vde, Ip = 0) 2N4898 CEO . 0.5 (VAp = 30 Vde, Ip = 0) 2N4899 - 0.5 (Vag = 40 Vac, I, = 0) 2N4800 . - 0.5 CE CE : Collector Cutoff Current logy t Wop = Rated Voro: Veg(ott) = 1.5 Vdc) - Ot Wop = Rated Vero: Vavott) c = 1.6 Vde, T,, = 150C) - 1,0 i Collector Cutoff Current logo mAdc Vop = Rated Vop I, = 0) - 0.4 Emitter Cutoff Current I mAde (Vp = 5-0 Vde, 1, = 0) EBO - 1.0 mAdec ON CHARACTERISTICS DC Current Gain* h . (Ig = 80 mAde, Voy, = 1.0 Vde) FE 40 - I, = 500 mAde, Vor = 1,0 Vde) 20 100 (I, = 1.0 Ade, Vag, =1.0 Vde) 10 - Collector-Emitter Saturation Voltage* v * (Ig = 1.0 Ade, I, = 0.1 Ade) CE(eat) - 0.8 Vde Base-Emitter Saturation Voltage* I, = 1.0 Adc, I, =0.1 Adc) * Vor (sat) Vde Base-Emitter On Voltage* My = 1.0 Ade, Vor Vv Vae = 1,0 Vde) BE(on) - 1.3 SMALL SIGNAL CHARACTERISTICS Current-GainBandwidth Product fn - MHz ' I (Ig - 250 mAdc, Vor = 10 Vdc, = 1.0 MHz) Output Capacitance Cob pF Vog =10 Vde, Th = 0, f = 100 kHz) - 100 Small-Signal Current Gain he - Ue = 250 mAde, Vor = 10 Vde, f = 1,0 kHz) 25 - * Pulse Test; PW =300 us, Duty Cycle = 2.0% FIGURE 2 SWITCHING TIME EQUIVALENT CIRCUIT FIGURE 3 TURN-ON TIME TURN-ON PULSE = 10, UNLESS : : 1, = +25 = T= +150 Vee t TIME (ys) Cracely APPROX 90 V m ob e | } 4404 Via EH - - -I- ty < 15 ns 1 100 < ty < 500 ps APPROX I t; = has i -uv i ty be DUTY cvCLE= 20% 10 270 308070 100 200 300 $00 700 1000 : TURN OFF PULSE Ig, COLLECTOR CURRENT (mA) 3-736367254" MOTOROLA SC CXSTRS/R FD. 2N4898 thru 2N4900 FIGURE 4 THERMAL RESPONSE Ty= +150C Iai) = t,, STORAGE TIME (yes) seo ana es BS 2 0.07 0.05 50 70 100 200 300 500 700 1000 fe COLLECTOR CURRENT (mA) * 10 0 30 th FALL TIME (us) 3-74 & 10 = 07 = 0. = 05 = g 0a B 02 g z OL t & 0.07 Prot} = 005 5 -t-be 3 0.03 t Ean DUTY CYCLE, D= 00 Oot 002 603 005 01 02 03 OF 10 20 30 50 10 : 4, TIME ims) FIGURE 5 ~ ACTIVE-REGION SAFE OPERATING AREA 10 70 BS 50 5 3 3.0 = 20 3 Ss 10 5 g 07 T= 200C B05 SECONDARY % 9, [ Leb Tema UMiTaTiOn 3 DISSIPATION 1S 02 SIGNIFICANT ABOVE Ic = , PULSE DUTY CYCLE = 10% puaase 10 20 30 50 70 10 2 30 = 80 70 100 Vce, COLLECTOR-EMITIER VOLTAGE (VOLTS) FIGURE 6 STORAGE TiME 50 = 20 7,2 405% The safe operating area curves indicate leVcg limits of the transistor which must be observed for reliable operation. Collector load lines for specific circuits must fail below the limits indicated by the applicable curve. The data of Figure 5 ts based upon Typ) = 200C; Te is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% pro- vided Tijpiy = 200C. Typ) may be calculated from the data in Figure 4 . At high case tempera- tures, thermal limitations will reduce the power which can be handled to values fess than the limita. = - tions imposed by secondary breakdown. 20 tc/ly =20 DE ese recy 0080340 2 i 96D 80340 _D . T-33-/9 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME At t Tappa Te =P inky Piclth 2 30 = (50 100 200 300 6500 1000 FIGURE 7 FALL TIME 30 50 70 400 200 300 Ic, COLLECTOR CURRENT (mA) 500 700 1000