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MTD3055V
MTD3055V Rev. 1.3
MTD3055V*
N-Channel Enhancement Mode Field Effect Transistor
Features
12 A, 60 V. RDS(ON) = 0.15 @ VGS = 10 V
Low gate charge.
Fast switching speed.
High performance technology for low RDS(ON).
1999 Fairchild Semiconductor Corporation
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General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
March 2015
MTD3055V
MTD3055V Rev. 1.3
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
a) RθJA= 38oC/W when mounted on a
1 in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted on a
minimuim pad.
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