Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 25 Vdc Collector - Base Voltage VCBO 30 Vdc Emitter - Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 Watts mW/C TJ, Tstg - 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 C/W Thermal Resistance, Junction to Case RqJC 125 C/W Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 2 TO-92 (TO-226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 -- Vdc Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 30 -- Vdc Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 -- Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO -- 100 nAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO -- 100 nAdc OFF CHARACTERISTICS Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 60 -- -- Collector - Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) VCE(sat) -- 0.5 Vdc Base - Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE(on) -- 0.95 Vdc fT 650 -- MHz Ccb -- 0.7 pF 0.35 0.6 0.65 0.9 -- 9.0 ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Common-Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) 2 Crb MPSH10 MPSH11 rb'Cc pF ps Motorola Small-Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR 3 Motorola reserves the right to make changes without further notice to any products herein. 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