1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Base Voltage VCBO 30 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.0
8.0 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 357 °C/W
Thermal Resistance, Junction to Case R
q
JC 125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 — Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) V(BR)CBO 30 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 3.0 — Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0) ICBO — 100 nAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0) IEBO — 100 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSH10/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc) hFE 60 — —
Collector–Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc) VCE(sat) — 0.5 Vdc
Base–Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc) VBE(on) — 0.95 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT650 — MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 0.7 pF
Common–Base Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MPSH10
MPSH11
Crb 0.35
0.6 0.65
0.9
pF
Collector Base Time Constant
(IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) rb’Cc— 9.0 ps
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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