ZXTP56020FDBQ 20V DUAL PNP LOW VCE(SAT) TRANSISTOR Features Mechanical Data BVCEO > -20V IC = -2A High Continuous Collector Current RCE(SAT) = 100m for a Low Equivalent On-Resistance Low Saturation Voltage VCE(SAT) < -150mV @ -1A Sidewall Tin Plating for Wettable Flanks in AOI PD up to 2.47W for Power Demanding Applications Low Profile 0.6mm High Package for Thin Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: U-DFN2020-6 (SWP) (Type A) with Sidewall Plating (SWP) Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin, Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) Application Matrix LED Lighting Power Management U-DFN2020-6 (SWP) (Type A) C1 B2 E2 6 C2 C1 1 Bottom View E1 Device Symbol C2 B1 Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZXTP56020FDBQ-7 1W9 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 1W9 YWX ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 1W9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z; 27~52 week; z represents 52 and 53 week X = A~Z: Internal Code 1 of 7 www.diodes.com April 2017 (c) Diodes Incorporated ZXTP56020FDBQ Absolute Maximum Ratings - Q1 & Q2 (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Base Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value -20 -20 -7 -2 -3 -300 -1 Unit V V V A A mA A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Notes 6 & 8) (Notes 6 & 9) (Notes 7 & 8) (Notes 7 & 9) (Notes 6 & 8) (Notes 6 & 9) (Notes 7 & 8) (Notes 7 & 9) (Note 10) -- PD RJA RJL TJ, TSTG Value 405 510 1650 2470 308 245 76 51 18 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 11) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper. 8. For a dual device with one active die. 9. For dual device with 2 active die running at equal power. 10. Thermal resistance from junction to solder-point (on the exposed collector pads). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 2 of 7 www.diodes.com April 2017 (c) Diodes Incorporated ZXTP56020FDBQ Max Power Dissipation (W) Thermal Characteristics and Derating Information 2.5 Notes 7 & 9 2.0 Notes 7 & 8 1.5 Notes 6 & 8 1.0 Notes 6 & 9 0.5 0.0 0 20 40 60 80 100 120 140 160 o Temperature ( C) 330 300 o T A=25 C 270 240 See Notes 6 & 8 210 180 D=0.5 150 120 90 D=0.2 60 30 0 1m 100 10m 100m 100 Maximum Power (W) o Thermal Resistance ( C/W) Derating Curve Single Pulse D=0.05 D=0.1 1 10 100 10 See Notes 6 & 8 1 0.1 100 1k Single Pulse o T A=25 C 1m Pulse Width (s) 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 100 80 Maximum Power (W) 70 o T A=25 C o Thermal Resistance ( C/W) 10m 100m 60 See Notes 7 & 8 50 D=0.5 40 30 D=0.2 20 Single Pulse D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Single Pulse o T A=25 C See Notes 7 & 8 10 1 100 Transient Thermal Impedance ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com April 2017 (c) Diodes Incorporated ZXTP56020FDBQ Electrical Characteristics - Q1 & Q2 (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 12) hFE Collector-Emitter Saturation Voltage (Note 12) VCE(SAT) Equivalent On-Resistance (Note 12) RCE(SAT) Base-Emitter Saturation Voltage (Note 12) VBE(SAT) Base-Emitter Turn-on Voltage (Note 12) Turn-On Time Delay Time Rise Time VBE(ON) tON tD tR Note: Min -20 -20 -7 250 210 170 160 100 Typ 60 10 50 Max -100 -50 -100 -110 -220 -200 -390 220 -1 -1.1 -1.25 -0.9 Unit V V V nA A nA mV m V V ns ns ns Test Conditions IC = -100A IC = -10mA IE = -100A VCB = -16V, IE = 0 VCB = -16V, IE = 0, TA = +150C VEB = -5.6V, IC = 0 VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA VCE = -2V, IC = -700mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A IC = -500mA, IB = -50mA IC = -1A, IB = -50mA IC = -0.7A, IB = -7mA IC = -2A, IB = -200mA IE = -1A, IB = -50mA IC = -0.5A, IB = -50mA IC = -1A, IB = -50mA IC = -2A, IB = -200mA VCE = -2V, IC = -0.5A IC = -1A, IB1 = -IB2 = 50mA; TA = +25C 12. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 4 of 7 www.diodes.com April 2017 (c) Diodes Incorporated ZXTP56020FDBQ Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 4 1000 IC Collector Current (A) hFE DC Current Gain VCE=-2V 800 600 100C 25C 400 -55C 200 IB=-14mA IB=-16mA IB=-18mA IB=-20mA IB=-12mA 3 2 IB=-6mA IB=-8mA 1 IB=-4mA IB=-10mA IB=-2mA 0 0 100m 1 10 100 1k 10k 0 1 IC Collector Current (mA) 2 VCE(SAT) (V) 1.2 5 1.4 VCE=-2V IC/IB=-20 -55C 1.0 1.2 -55C VBE(SAT) (V) 25C VBE(ON) (V) 4 Collector Current v VCE(SAT) hFE v Collector Current 0.8 0.6 0.4 100C 0.2 0.0 100m 1 10 100 1.0 25C 100C 0.8 0.6 0.4 1k 0.2 100m 10k 1 IC Collector Current (mA) VBE(ON) v Collector Current 10 100 1k 10k IC Collector Current (mA) VBE(SAT) v Collector Current 1 1 IC/IB=-20 Ta=25 TA=25C C 100C 0.1 VCE(SAT) (V) VCE(SAT) (V) 3 25C 0.01 0.1 IC/IB=50 IC/IB=100 0.01 -55C 0.001 100m 1 10 100 IC/IB=10 1k IC Collector Current (mA) 10k 0.001 100m VCE(SAT) v Collector Current ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 1 10 100 1k 10k IC Collector Current (mA) VCE(SAT) v Collector Current 5 of 7 www.diodes.com April 2017 (c) Diodes Incorporated ZXTP56020FDBQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (SWP) (Type A) A1 A U-DFN2020-6 (SWP) (Type A) Dim Min Max Typ A 0.55 0.65 0.60 A1 0.00 0.05 0.03 A3 --0.127 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.57 0.77 0.67 E 1.95 2.05 2.00 E2 0.80 1.00 0.90 e 0.65BSC k 0.30BSC L 0.22 0.32 0.27 z 0.20BSC All Dimensions in mm A3 Seating Plane D e k D2 Cut-off end of non-functional E E2 bonding wire L z b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (SWP) (Type A) X2 C G2 G G1 Y2 Y1 Y X1 ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 Dimensions C G G1 G2 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.200 0.210 0.250 0.400 0.770 1.700 0.450 1.000 2.300 X 6 of 7 www.diodes.com April 2017 (c) Diodes Incorporated ZXTP56020FDBQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. B. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXTP56020FDBQ Datasheet number: DS38567 Rev.1 - 2 7 of 7 www.diodes.com April 2017 (c) Diodes Incorporated