ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
20V DUAL PNP LOW VCE(SAT) TRANSISTOR
Features
BVCEO > -20V
IC = -2A High Continuous Collector Current
RCE(SAT) = 100mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage VCE(SAT) < -150mV @ -1A
Sidewall Tin Plating for Wettable Flanks in AOI
PD up to 2.47W for Power Demanding Applications
Low Profile 0.6mm High Package for Thin Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Application
Matrix LED Lighting
Power Management
Mechanical Data
Case: U-DFN2020-6 (SWP) (Type A) with Sidewall Plating
(SWP)
Case Material: Molded Plastic. ―Green‖ Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin, Solderable per MIL-STD-202,
Method 208
Weight: 0.0065 grams (Approximate)
Ordering Information (Notes 4 & 5)
Part Number
Marking
Reel Size (inches)
Quantity Per Reel
ZXTP56020FDBQ-7
1W9
7
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1W9 = Product Type Marking Code
Y = Year: 0~9
W = Week: A~Z: 1~26 week;
a~z; 27~52 week; z represents
52 and 53 week
X = A~Z: Internal Code
Bottom View
U-DFN2020-6 (SWP) (Type A)
Device Symbol
Top View
Pin-Out
1W9
YWX
C1 B2 E2
E1 B1 C2
1
6
C1 C2
ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
Absolute Maximum Ratings – Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-2
A
Peak Pulse Collector Current
ICM
-3
A
Base Current
IB
-300
mA
Peak Base Current
IBM
-1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Notes 6 & 8)
PD
405
mW
(Notes 6 & 9)
510
(Notes 7 & 8)
1650
(Notes 7 & 9)
2470
Thermal Resistance, Junction to Ambient
(Notes 6 & 8)
RJA
308
°C/W
(Notes 6 & 9)
245
(Notes 7 & 8)
76
(Notes 7 & 9)
51
Thermal Resistance, Junction to Lead
(Note 10)
RJL
18
°C/W
Operating and Storage Temperature Range
—
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 11)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge – Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper.
8. For a dual device with one active die.
9. For dual device with 2 active die running at equal power.
10. Thermal resistance from junction to solder-point (on the exposed collector pads).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
Thermal Characteristics and Derating Information
100μ 1m 10m 100m 110 100 1k
0
30
60
90
120
150
180
210
240
270
300
330
TA=25oC
See Notes 6 & 8
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s) 100μ 1m 10m 100m 110 100 1k
0.1
1
10
100
Single Pulse
TA=25oC
See Notes 6 & 8
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
100μ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse
TA=25oC
See Notes 7 & 8
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
100μ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70
80
TA=25oC
See Notes 7 & 8
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s)
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
Notes 6 & 8
Notes 7 & 8
Notes 7 & 9
Notes 6 & 9
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
µ
µ
µ
µ
ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
Electrical Characteristics – Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
-20

V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 12)
BVCEO
-20
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7

V
IE = -100µA
Collector-Base Cutoff Current
ICBO


-100
nA
VCB = -16V, IE = 0
-50
µA
VCB = -16V, IE = 0, TA = +150°C
Emitter-Base Cutoff Current
IEBO
-100
nA
VEB = -5.6V, IC = 0
DC Current Gain (Note 12)
hFE
250



VCE = -2V, IC = -100mA
210


VCE = -2V, IC = -500mA
170


VCE = -2V, IC = -700mA
160


VCE = -2V, IC = -1A
100


VCE = -2V, IC = -2A
Collector-Emitter Saturation Voltage (Note 12)
VCE(SAT)

-110
mV
IC = -500mA, IB = -50mA

-220
IC = -1A, IB = -50mA

-200
IC = -0.7A, IB = -7mA

-390
IC = -2A, IB = -200mA
Equivalent On-Resistance (Note 12)
RCE(SAT)
220
mΩ
IE = -1A, IB = -50mA
Base-Emitter Saturation Voltage (Note 12)
VBE(SAT)

-1
V
IC = -0.5A, IB = -50mA

-1.1
IC = -1A, IB = -50mA

-1.25
IC = -2A, IB = -200mA
Base-Emitter Turn-on Voltage (Note 12)
VBE(ON)

-0.9
V
VCE = -2V, IC = -0.5A
Turn-On Time
tON
60
ns
IC = -1A, IB1 = -IB2 = 50mA;
TA = +25°C
Delay Time
tD
10
ns
Rise Time
tR
50
ns
Note: 12. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0 1 2 3 4 5
0
1
2
3
4
100m 110 100 1k 10k
0
200
400
600
800
1000
100m 110 100 1k 10k
0.2
0.4
0.6
0.8
1.0
0.0
1.2
100m 110 100 1k 10k
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100m 110 100 1k 10k
0.001
0.01
0.1
1
100m 110 100 1k 10k
0.01
0.1
0.001
1
IB=-10mA
VBE(SAT) v Collector Current
VCE(SAT) v Collector Current
VCE(SAT) v Collector Current
VBE(ON) v Collector Current
hFE v Collector Current
IC Collector Current (A)
VCE(SAT) (V)
IB=-6mA
IB=-8mA
VCE=-2V
100°C
VCE=-2V
-55°C
25°C
hFE DC Current Gain
IC Collector Current (mA)
IB=-20mA
IB=-18mA
IB=-16mA
IB=-14mA
IB=-2mA
IB=-12mA
IB=-4mA
VBE(SAT) (V)
IC Collector Current (mA)
VBE(ON) (V)
IC Collector Current (mA)
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=-20
-55°C
Collector Current v VCE(SAT)
IC/IB=-20
25°C
100°C
-55°C
25°C
100°C
VCE(SAT) (V)
25°C
-55°C
100°C
VCE(SAT) (V)
IC Collector Current (mA)
Ta=25°C
IC Collector Current (mA)
TA=25°C
ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (SWP) (Type A)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (SWP) (Type A)
D
E
A3
Seating Plane
A1
A
b
E2
D2
L
e
z
k
Cut-off end of
non-functional
bonding wire
U-DFN2020-6 (SWP)
(Type A)
Dim
Min
Max
Typ
A
0.55
0.65
0.60
A1
0.00
0.05
0.03
A3
--
--
0.127
b
0.25
0.35
0.30
D
1.95
2.05
2.00
D2
0.57
0.77
0.67
E
1.95
2.05
2.00
E2
0.80
1.00
0.90
e
0.65BSC
k
0.30BSC
L
0.22
0.32
0.27
z
0.20BSC
All Dimensions in mm
Dimensions
Value
(in mm)
C
0.650
G
0.200
G1
0.210
G2
0.250
X
0.400
X1
0.770
X2
1.700
Y
0.450
Y1
1.000
Y2
2.300
Y2
X2
X
Y
C
Y1
X1
G
G1
G2
ZXTP56020FDBQ
Datasheet number: DS38567 Rev.1 - 2
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ZXTP56020FDBQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
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its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
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the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
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products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
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Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2017, Diodes Incorporated
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