TRANSISTOR ARRAY u:PA2001C,.PA2002C, vPA2003C,,PA2004C NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY DESCRIPTION The uPA2001C, 2002C, 2003C and 2004C are monolithic arrays of seven darlington transistors. These devices are especially suited for driving relays, solenoids, LED, lamps, and other devices with up to 0.3 A output current per unit. FEATURES PACKAGE DIMENSIONS: @ Transient Protected Outputs in millimeters @ High DC Current Gain - @ High Output Drive Current 161514131211109 ~- e High Output Voltage Ri ae 3 @ Package is 16 pin PLASTIC DIP. GuuaueU a 42345678: - 19.4MAX, 1 = 7.62 le # afi He o~15 0.540.1 2.54 0.25 75:68 EQUIVALENT CIRCUIT (1 Unit) _ CONNECTION DIAGRAM (Top View) uPA2001C uPA2002C O, O2 Os; O; O, O, SK [16] fal 7] fol [9 LH Lid iF + : IDE =[s}-be Ga ja] o B}-b Te BEGRUEE l, I. ls Is be I, GND | : Input (Base) oO : Output (Collector) GND : (Common Emitter) SK : Surge Killer Nippon Electric Co.Ltd.ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (Ta = 25 C) Output Voltage Vo 60 Vv Input Voltage (except uPA2001C) Vv] 0.5 to +30 V Input Current (only zPA2001C) ly 25 mA/unit Output Current lo 500 mA/unit Output Current lo* 2.3 A/package Reverse Voltage (Clamp Diode) VR 60 V Forward Current (Clamp Diode) Ip 500 mA/unit Maximum Power Dissipation Total Power Dissipation Pd 900 mW/package Total Power Dissipation Pd* 2.5 W/package Maximum Temperature Operating Temperature Topt 30 to + 75 C Storage Temperature Tstg 55 to +150 C * PW<20 ms, duty cycle<10 % : ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. | TYP. | MAX. | UNIT TEST CONDITIONS Output Leakage Current IL 0 uA Voes0V 3 100 BA Vce=50 V, Ta=70 C DC Current Gain hFE 1000 2800 VCE=2.0 V, 1Q9=350 mA 0.9 1.1 Vv 19=100 mA, 1]=250 pA Collector Saturation Voltage VCE (sat) 1.0 1.3 Vv lo=200 mA, 1)=350 yA 1,2 1.6 Vv I9=350 mA, 1;=500 pA 11 Vv VCE=2.0 V,I9=100 mA puPA2002C 12 Vv VCE=2.0 V, I9Q=200 mA 13.5 Vv VCE=2.0 V, I9=350 mA 2.0 Vv VCE=2.0 V, Ig=100 mA Input Voltage | pPA2003C VI 2.4 Vv VCE=2.0 V, I9=200 mA 3.4 Vv VCE=2.0 V, 19=350 mA 5.0 Vv VCE=2.0 V, i9=100 mA pPA2004C 6.0 Vv VcCE=2.0 V, I9=200 mA 8.0 Vv VCE=2.0 V, 1Q=350 mA pPA2002C 1.3 mA VI=17V Input Current | ~PA2003C ly 1.35 mA V1=3.85 V BPA2004C 1.0 mA V1=5.0 V Reverse Current (Clamp Diode) IR 50 HA VR=50 V Forward Voltage (Clamp Diode) VE 2.0 Vv [-=350 mA Terminal Capacitance Ct 15 pF V|=0, f= 1.0 MHz Note: Input Voltage and Current of the uPA2001C depend on external resistor.TYPICAL CHARACTERISTICS (Ta = 25 C) OUTPUT CURRENT vs, COLLECTOR TO EMITTER VOLTAGE 500 140 pA 120 pA 400 ! e c = 300 O ve a 2 DB oO 1j=100 pA 100 0 1 3 5 "Vege Collector to Emitter Voltage V DC CURRENT GAIN vs, OUTPUT CURRENT VcE=2.0 V 5000 cc ry oO vw c 3 > 1000 a i w 500 LL xo 100 10 50 100 500 1000 lo Output Current mA INPUT CURRENT vs. INPUT VOLTAGE (uPA2003C) < E i e 5 O ood Za Qa 1 0 4 8 12 16 20 V; Input Voltage V VCE (sat) ~ Collector Saturation Voltage V ly Input Current mA 1) ~ imput Current mA COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 19=100-1; 50 400 500 1000 Io Output Current mA INPUT CURRENT vs. INPUT VOLTAGE (pPA2002C) 8 12 16 20 24 V | Input Voltage V INPUT CURRENT vs. INPUT VOLTAGE (uPA2004C) 4 8 12 16 V, Input Voltage VOUTPUT VOLTAGE vs, INPUT VOLTAGE (pPA2002C) Vec=20 V R_=180 2 Vo Output. Voltage V 2 4 6. 8 10 12 14 Vj Input Voltage V OUTPUT VOLTAGE vs, _ INPUT VOLTAGE (uPA2604C) Vec=20 V R.=180 2 Vo Output Voltage V 0 1 2 3 5 6 Vj, Input Voltage V Vo -- Output Voltage V OUTPUT VOLTAGE vs. INPUT VOLTAGE (uPA2003C} Vcc=20 V R,=180 Q 0.5 1.0 1. 2.0 2.5 0 V; Input Voltage V Vo-V TEST CIRCUIT pPA2002C~2004C (1 Unit} Vcc=20 V RL=180 2 v\ Vo Nippon Electric Co,Ltd. NEC Building, 33-1, Shiba Gochome, Minato-ku, Tokyo 108, Japan Tel.: Tokyo 454-1111 Telex Address: NECTOK J22686 Cable Address: MICROPHONE TOKYO 1C- 1401 AUG. 20 ~ 81RK Printed in Japan