Satire ee = EPITAXIAL PLANAR NPN 2N 4910 2N 4911 2N 4912 MEDIUM POWER GENERAL PURPOSE TRANSISTORS The 2N4910, 2N4911 and 2N4912 are silicon epitaxial planar NPN transistors in Jedec TO-66 metal case. They are intended for use in switching and amplifier applications. The comptementary PNP types are the 2N4898, 2N4899 and 2N4900 respectively. ABSOLUTE MAXIMUM RATINGS 2N4910 | 2N4911 | 2N4912 Vcao Collector-base voltage (I_ = 0) 40V 60V | 80V Vceo Collector-emitter voltage (Ig = 0) 40V 60V 80V Veso Emitter-base voltage (Ic = 0) SV Ic Collector current 4A Ig Base current 1A Prot Total power dissipation at Tease $ 25C 25w Tstg Storage temperature 65 to 200C j Junction temperature 200C MECHANICAL DATA Dimensions in mm Collector connected to case au 65" 3957" i 8 LS o : 8 | 3 2! ; 3 i a & i MT . a rR [s& 3 ia it 61782193 7 ON 365 wg _so TO-66 . SS EON Neen SF tt eePES SHORE FN HR ASL ASEERLLGE SNE PIERS BI BARREN 88 Soe Se Sect ITM N be ng. 2N 4910 2N 4911 2N 4912 THERMAL DATA Rinj-case Thermal resistance junction-case max 7 C/W ELECTRICAL CHARACTERISTICS (Tease = 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.] Unit Icz0 Collector cutoff for 2N4910 Vcs = 40V 0.1 | mA current (Ie = 0) for 2N4911 Ves = 60V 0.1} mA for 2N4912 Veg = 80V 0.1) mA Icey Collector cutoff for 2N4910 Vcz = 40V 0.1 |] mA current for 2N4911 Vc = 60V 0.1 | mA (Vee = -1.5V) for 2N4912 Vcc = 80V 0.1 | mA Tease = 150C for 2N4910 Vce = 40V 1] mA for 2N4911 Vez = GOV Ti mA for2N4912 Vcz = 80V 1] mA Icz0 Collector cutoff for 2N4910 Vee = 20V 0.5] mA current (Ig = 0) for 2N4911 Voz = 30V 0.5 | mA for 2N491? Vee = 40V 0.5 | mA legs Emitter cutoff Vas = 5.0V 1} mA current (ic = 0) Vecee tsus) Collector-emitter Ic = 0.1A sustaining voltage | for 2N4910 40 Vv (ls = 0) for 2N4911 60 Vv for 2N4912 80 Vv2N 4910 2N 4911 2N 4912 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max] Unit Vee say Collector-emitter lec = 1A lg = 0.1A 0.6] V saturation voltage - V3e isan. Base-emitter le = 1A lg = O0.1A 13] V Saturation voltage Vse" Base-emitter lc = 1A Voce = 1V 13] Vv voltage Nee DC current gain le = 50MA Vee = 1V 4Q _ lc = 500MA Vee = 1V 20 100 | le = 1A Vee > iV 10 fr Transition le = 250MA_ Veg = 10V 3 MHz frequency = 1MHz Ceao Coillector-base fe = 0 Veep = 10V 100 | pF Capacitance f = 100KHz Nee Small signal le = 250MA Vee = 10V 25 _ Current gain f = 1KHz * Pulsed: pulse duration = 300us, duty cycle <2%.