Discrete IGBT with FAST Diodes Ultra Hy igh IG Deed BTs = Sufix C G High Speed Series E Vees | loeg | Veewan | ty | TO-220 (P) PLUS247 (x) | T0-268 AA TO-204| jsopLus247(R) | SOT-227B max | typ (T) (M) (N) : vn) Rl A est os TO-26 a 7 0-263 (A) TO-247 (H) ISOPLUS220 TO-264 (K) PLUS264 (B) bh New a . LOW SATURATION VOLTAGE TYPES 600| 40 2.0 200 IXGH28N60BD1_ | IXGT28N60B8D1 60 17 400 IXGH31N60D1 IXGT31N60D1 66 1.8 200 IXGR39N60BD1 75 1.8 200 IXGH39N60BD1 75 1.7 500 IXGR6ON60U1 1000} 20 3.5 | 1000 | IXGA12N100U1* | IXGH12N100U1* 20 3.5 | 1000 | IXGP12N100U1* 34 3.5 750 iXGH17N100U1* 50 3.5 500 IXGH25N100U1* HIGH SPEED TYPES 600| 14 2.0 45 | IXGA7N60CD1 14 2.0 45 | IXGP7N60CD1 24 2.1 120 IXGH12N60BD1 24 2.7 5 | IXGA12N60CD1 IXGH12N60CD1 24 27 55 | IXGP12N60CD1 IXGC12N60CD1 40 2.0 100 IXGH20N60BD1 IXGT20N60BD 1 45 25 55 IXGR32N60CD1 48 25 55 IXGH24N60CD1 IXGT24N60CD1 60 1.8 130 IXGH3ON60BU1 60 1.8 130 IXGH30N60BD1 60 25 80 IXGH32N60BD1 IXGT32N60BD1 60 25 80 IXGH32N60BU1 60 2.5 55 IXGH32N60CD1 IXGT32N60CD1 70 2.2 120 IXGR40N60BD1 75 25 75 IXGR40N60CD1 75 2.2 120 IXGX40N60BD1 75 25 75 > IXGN40N60CD1 75 23 150 IXGRS5ON60BD1 75 2.3 150 IXGX50N60BD1 IXGKS50N60BD1 75 2.3 150 IXGN50N60BD2 "75 2.3 150 IXGN50N60BD3 75 23 150 IXGB75N60BD1 1000} 20 4.0 500 | IXGA12N100AU1*} IXGH12N100AU1" 20 4.0 500 | IXGP12N100AU1* 34 4.0 450 IXGH17N100AU1* 50 4.0 600 IXGH25N100AU1* 1200} 30 3.8 160 IXGH15N120CD1 | = IXGT15N120CD1 30 3.2 250 IXGH15N120BD1 IXGT15N120BD1 50 4.0 600 IXGH25N120AU1" 70 4.4 115 IXGK35N120CD1 70 3.2 160 IXGK35N120BD1 Notes: *-notfornew design ** - Lead terminal current limit. IGBT/Diode circuit connections: 18 _U1 & _D1: Ultrafast FRED or HiPerFRED diode respectively connected anti-parallel to IGBT Uttrafast HiPerFRED Diode anode connected to IGBT collector (Boost configuration) Uitrafast HiPerFRED Diode cathode connected to IGBT emitter (Buck configuration) Outline drawings on page 91-100. _D2: _D3: