MOTOROLA m= SEMICONDUCTOR xs TECHNICAL DATA 2N5193 thru 2N5195 SILICON PNP POWER TRANSISTORS ... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5190, 2N5191, 2N5192 *MAXIMUM RATINGS 4 AMPERE POWER TRANSISTORS SILICON PNP 40-80 VOLTS Rating Symbol | 2NS193 | 2NS194 | 2N5195 Unit Collectar-Emitier Voltage VCEO 40 60 80 Vde Collector-Base Voltage Ves 40 60 80 Vide Emutter-Base Voltage Veg | 5.0 *| Vde Collector Current Ic 4.0 | Ade Base Current ip <?+-_$- 1.0 _ | Adc Total Power Dissipatian @ Tc = 25C Pp _- 40 | Watts Derate above 25C + 320 -_ } mw/c Operating and Storage Junction TJ. Tstg | <#- -65 to #150 > Sow Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case ae 3.12 Sciw ELECTRICAL CHARACTERISTICS (Tc - c FE OFF CHARACTERISTICS 25C unless otherwise notedt Symbol | Min | Max | Unit | Collector-Emuttar Sustaining Voltage (1) Vee otsusl Vde tig = 01 Ade, Ig = 0) 2N5193 40 2N5194 60 2N5195 0 Collector Cutoff Current tceo mAde (Vee = 40 Vde, Ig = Oo 2N5193 a 190 (VE = 60 Vde, Ig = 0 2N5194 5 10 (VcE = 80 Vde. tg = OF 2N5195 a 10 Collector Cutoff Current Icex mAde (Voge = 40 Vde, Vee tatty = 15 Vie) 2N5199 S 01 (Veg 2 60 Vde, Vge (ott) 2 1-5 Vdel 2NS194 - o1 (VE = 80 Ve, Vag taffy = 1.5 Viel 2NS195 - a1 (Vee = 40 Vde, Vaeroft) = 15 Vee, 2N5193 = 20 To = 125C) (Veg = 60 Vde. Vac loft) * 1-5 Vde, 2NSIS4 - 20 Te * 125C) (Vge * 80 Vde, Vgetotty = 1-5 Vide, 2N5195 - 20 To = 128C} Collector Cutoff Current Icao mAde (Veg * 40 Vde, tg = 0} 2N5193 a ol (Veg * 60 Vae, IE * 0) 2NS194 = o1 (Veg * 80 Vde, Ie = OF 2N8195 = 0.t Emitter Cutolf Current ego mAdc. (Vge * 5 0 Vdc, Ic = 0} ~ 10 ON CHARACTERISTICS OC Currant Gain {1} hee a {lg = 15 Ade, Voce = 2.0 Vdel 2N5193 3 100 2NS5194 25 100 2N5195 20 60 {lg = 40 Ade, Veg = 2.0 Vdc) 2N5193 10 - 2N5194 10 - 2N5195 2.0 = Collector-E mutter Saturation Voltege {1} Vick (sat) Vde (ig = 1.5 Ade. ig = 0.15 Adel - 06 {Iq = 4.0 Ade, Ig = 10 Adc} be 1.4 Bese- mitter On Voltage (1) VBE ten} Vde Ug = 1.5 Ade, Vg = 2.0 Vee) - 1.2 DYNAMIC CHARACTERISTICS Currant-Gain-Gandwidth Product tr MHz tg # 1.0 Ade, Veg 10 Vde, f= 1.0 MHz) 20 - Sndicates JEDEC Registered Date (11 Pulse Teet: Pulse Width 300 ps, Outy Cycle S 2 Of. 4 bam 4 -~ G al eR Lr om Ghani 2 6]9 6) NOTES: 4, CIMENSIONING AND TOLERANCING PER ANSI 14 5M, 1982. 2. CONTROLLING CHMENSION: INCH. CASE 77-06 TO-225AA TYPEVce, COLLECTOR-EMITTER VOLTAGE (VOLTS} hee, OC CURRENT GAIN (NORMALIZED) VOLTAGE (VOLTS) FIGURE 1 DC CURRENT GAIN 10 7.0 5.0 3.0 2.0 1.0 07 0.5 6.3 0.2 Ot 0.004 0.007 0.01 0.02 0.03 0.05 at 0.2 03 0.5 1.0 2.0 3.0 (4.0 -Ig, COLLECTOR CURRENT (AMP) FIGURE 2 COLLECTOR SATURATION REGION 2.0 0.8 0.4 0 0.05 0.07 0.1 02 03 05 07 1.0 20 630 0 7.0 16 20 6 50 70 100 200 30000 ip, BASE CURRENT (mA) FIGURE 3 ON VOLTAGE FIGURE 4 TEMPERATURE COEFFICIENTS 20 42.5 s g +20 APPLIES FOR Ic < he @ Ve 16 Eats Ty = 65C to + 150C 2 @ +10 Ss 12 iz +05 Ww 8 0 08 VBE(sat) @ =10 = 05 , Vee @ VcE=2.0V 2 = -t0 g a4 = -15 # e = 10 e200 Q 28 0.005 0.01 002003005 Of 0203 05 10 20 3040 0.005 0.01 002003005 of 0203 06 10 20 3.040 Ic, COLLECTOR CURRENT (AMP) Ie, COLLECTOR CURRENT (AMP)FIGURE 5 COLLECTOR CUT-OFF REGION FIGURE 6 EFFECTS OF BASE-EMITTER RESISTANCE g 07 = s => ua 3 2 106 L <= KE i io! b i$ ua c = 105 2 Pend wi 5 E = = in im 104 tan uw 3 10 8 o s 108 ites V. = 0 3 FROM FIGURE a & 10-3 i 102 +04 4039 40.2 40f 0 -O1 -02 -03 -04 -05 -06 a 20 40 60 80 100 120 40160 ec Veg. BASE-EMITTER VOLTAGE (VOLTS} Ts. JUNCTION TEMPERATURE (C} FIGURE 7 SWITCHING TIME EQUIVALENT CIRCUIT FIGURE 8 CAPACITANCE TURN-ON PULSE vi Ri VBE(ott) e ; Vin 0O+- Vin SCOPE APPROX -LIV [ i be ty APPROX 3 | 9.0Vy d<<Cep z = g Via -|- g | 40V 3 APPROX WY take ty 7.008 Rg AND Rc VARIED TO OBTAIN DESIRED TURN-OFF PULSE to0<12<600us = pyARENT LEVELS 19< 15 ns 01 0203 05 10 2030 60 1 20 3040 DUTY CYCLE * 2.0% Va. REVERSE VOLTAGE (VOLTS) FIGURE 9 TURN-ON TIME FIGURE 10 TURN-OFF TIME 20 oe 2182 10 ifig= 10 tha ey ot a t Par 05 Os 03 gas w 02 #02 - us te@ Voc = 10 o1 01 0.07 0.05 0.05 =20V 0.03 0.03 0.02 0.02 0.05 0.07 0.1 02 03 06 07 1.0 20 3.0 4.0 0.05 0.07 0. 02 03 O08 07 10 20 3.040 Ic, COLLECTOR CUARENT (AMP) fg, COLLECTOR CURRENT (AMP)FIGURE 11 RATING AND THERMAL DATA ACTIVE-REGION SAFE OPERATING AREA 10 20 breakdown limit @ Te = 25 wire limit = 105 Thermal 0S tc, COLLECTOR CURRENT (AMP) 02 0.f 1.0 VceE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate Ic - Vcg limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to.greater dissipation than the curves indicate. The data of Figure 11 is based on Ty(pk) = 150C. To is variable depending on conditions. Second breakdown pulse limits are valid for duty cycies to 10% provided Ty(pk) 180C. At high-case temperatures, thermal limitations will raduce the power that can be handled to values fess than the limitations imposed by second breakdown. FIGURE 12 - THERMAL RESPONSE 1.0 07 05 03 02 S25 asec 0.03 r(t}, EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED} 3 R 0.01 0.01 0.02 0.03 0.05 0.8 02 03 06 10 2030 50 ia 2 6 0 100 93C(max)} = 3. 200 30500 1000 t, TIME OR PULSE WIDTH {ms} DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA FIGURE A b Po Pp t s 0 I I | --- 1 tt OUTY CYCLE O= its PEAK PULSE FOWER =P, A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal re- sponse, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find 6 yclt), multiply the value obtained from Figure 12 by the steady state value Oj. Example: The 2NS193 is dissipating 50 watts under the following condi- tlans: tz = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r (tq, D) is 0.27. The peak rise in junction temperature is therefore: oT = c(t) X Pp X Jo = 0.27 X 60 X 3.12 = 42,2C