TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with TIP140, TIP141 and TIP142 125 W at 25C Case Temperature 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP145 Collector-base voltage (IE = 0) TIP146 V CBO Emitter-base voltage V -60 VCEO TIP147 Continuous collector current -80 -100 TIP145 TIP146 UNIT -60 TIP147 Collector-emitter voltage (IB = 0) VALUE -80 V -100 VEBO -5 V IC -10 A ICM -15 A IB -0.5 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3.5 W 1/2LIC2 100 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 260 C Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 1 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE V CE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP145 IC = -30 mA IB = 0 (see Note 5) TYP MAX UNIT -60 TIP146 -80 TIP147 -100 V VCE = -30 V IB = 0 TIP145 -2 VCE = -40 V IB = 0 TIP146 -2 VCE = -50 V IB = 0 TIP147 -2 VCB = -60 V IE = 0 TIP145 -1 VCB = -80 V IE = 0 TIP146 -1 VCB = -100 V IE = 0 TIP147 -1 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -5 A transfer ratio VCE = -4 V IC = -10 A Collector-emitter IB = -10 mA IC = -5 A saturation voltage IB = -40 mA IC = -10 A VCE = IC = -10 A (see Notes 5 and 6) -3 V IB = 0 (see Notes 5 and 6) -3.5 V MAX UNIT Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Base-emitter voltage Parallel diode forward voltage IE = -4 V -10 A -2 (see Notes 5 and 6) mA mA mA 1000 500 -2 (see Notes 5 and 6) -3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN Turn-on time IC = -10 A IB(on) = -40 mA IB(off) = 40 mA 0.9 s toff Turn-off time VBE(off) = 4.2 V RL = 3 tp = 20 s, dc 2% 11 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP ton DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS145AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 1000 VCE = -4 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 -10 TCS145AB -2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 -1*5 -1*0 -0*5 -20 TC = -40C TC = 25C TC = 100C 0 -0*5 -1*0 IC - Collector Current - A -10 -20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS145AC VBE(sat) - Base-Emitter Saturation Voltage - V -3*0 TC = -40C TC = 25C -2*5 TC = 100C -2*0 -1*0 -1*5 -0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 0 -0*5 -1*0 -10 -20 IC - Collector Current - A Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS145AA -10 -1*0 TIP145 TIP146 TIP147 -0*1 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 o 4,1 4,0 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAW NOTE A: The centre pin is in electrical contact with the mounting tab. 5 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.