TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
TIP140, TIP141 and TIP142
●125 W at 25°C Case Temperature
●10 A Continuous Collector Current
●Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
TIP145
TIP146
TIP147
VCBO
-60
-80
-100
V
Collector-emitter voltage (IB = 0)
TIP145
TIP146
TIP147
VCEO
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-10 A
Peak collector current (see Note 1) ICM -15 A
Continuous base current IB-0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Unclamped inductive load energy (see Note 4) ½LIC2100 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA
(see Note 5)
IB = 0
TIP145
TIP146
TIP147
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -40 V
VCE = -50 V
IB=0
IB=0
IB=0
TIP145
TIP146
TIP147
-2
-2
-2
mA
ICBO
Collector cut-off
current
VCB = -60 V
VCB = -80 V
VCB = -100 V
IE=0
IE=0
IE=0
TIP145
TIP146
TIP147
-1
-1
-1
mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -2 mA
hFE
Forward current
transfer ratio
VCE = -4 V
VCE = -4 V
IC= -5A
IC=-10A (see Notes 5 and 6) 1000
500
VCE(sat)
Collector-emitter
saturation voltage
IB = -10 mA
IB = -40 mA
IC= -5A
IC=-10A (see Notes 5 and 6) -2
-3 V
VBE
Base-emitter
voltage VCE = -4 V IC= -10 A (see Notes 5 and 6) -3 V
VEC
Parallel diode
forward voltage IE = -10 A IB= 0 (see Notes 5 and 6) -3.5 V
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t ime I C = -10 A
VBE(off) = 4.2 V
IB(on) = -40 mA
RL = 3 Ω
IB(off) = 40 mA
tp = 20 µs, dc ≤ 2%
0.9 µs
toff Turn-off time 11 µs
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
3
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
hFE - Typical DC Current Gain
100
1000
10000 TCS145AA
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -4 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
0
TCS145AB
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·0
-1·5
-0·5
0
TCS145AC
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
4
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·1
-1·0
-10
-100 SAS145AA
TIP145
TIP146
TIP147
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100
120
140 TIS140AA
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
5
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0 3,95
4,15
1 2 3
NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
ø
