2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45 0.71 (0.028) 0.86 (0.034) TO-77 PACKAGE PIN 1 - Collector 1 PIN 2 - Base 1 PIN 3 - Emitter 1 PIN 4 - Emitter 2 PIN 5 - Base 2 PIN 6 - Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25C unless otherwise stated) VCBO VCEO VEBO IC PD Collector - Base Voltage Collector - Emitter Voltage 1 Emitter - Base Voltage Continuous Collector Current Total Device Dissipation PD Total Device Dissipation TSTG TL Storage Temperature Range Lead temperature (Soldering, 10 sec.) TAMB = 25C Derate above 25C TC = 25C Derate above 25C EACH SIDE TOTAL DEVICE 45V 45V 6V 30 300mW 500mW 1.72mW / C 2.86W / C 750mW 1.5W 4.3mW / C 8.6mW / C -65 to 200C 300C NOTES 1. Base - Emitter Diode Open Circuited. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/95 2N2913 2N2915 2N2917 ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Test Conditions 1 Parameter Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS Collector - Base Breakdown Voltage IC = 10mA IE = 0 45 V(BR)CEO* Collector - Emitter Breakdown Voltage IC = 10mA 45 V(BR)EBO Emitter - Base Breakdown Voltage IE = 10mA IB = 0 IC = 0 6 ICBO Collector Cut-off Current VCB = 45V IE = 0 10 nA TA = 150C 10 mA ICEO Collector Cut-off Current VCE = 5V IB = 0 2 IEBO Emitter Cut-off Current VEB = 5V IC = 0 2 V(BR)CBO VCE = 5V hFE DC Current Gain IC = 10mA 60 TA = -55C 15 IC = 100mA 100 VCE = 5V IC = 1mA 150 0.70 IC = 1mA 0.35 VCE(sat) Collector - Emitter Saturation Voltage IB = 100mA hib Small Signal Common - Base VCB = 5V Input Impedance f = 1kHz Small Signal Common - Base VCB = 5V Output Admittance f = 1kHz Small Signal Common - Base VCE = 5V Current Gain f = 20MHz Common - Base Open Circuit VCB = 5V Output Capacitance f = 140kHz to 1MHz Cobo -- IC = 100mA Base - Emitter Voltage |hfe| VCE = 5V nA 240 VCE = 5V VBE hob V IC = 1mA 25 IC = 1mA IC = 500mA V 32 W 1 mmho -- 3 IE = 0 pF 6 * Pulse Test: tp = 300ms , d 1%. Parameter Test Conditions TRANSISTOR MATCHING CHARACTERISTICS hFE1 Static Forward Current VCE = 5V hFE2 |VBE1 - VBE2| Gain Balance Ratio See Note 2. Base - Emitter Voltage VCE = 5V Differential VCE = 5V |D(VBE1 - VBE2)DTA| IC = 100mA 2N2915 2N2917 Min. Typ. Max. Min. Typ. Max. 0.9 IC = 100mA IC = 10mA to 1mA VCE = 5V IC = 100mA Base - Emitter Voltage TA1 = 25C TA2 = -55C Differential Change With VCE = 5V IC = 100mA Temperature TA1 = 25C TA2 = 125C 1 0.8 1 3 5 5 10 0.8 1.6 Unit -- mV mV 1 2 NOTES 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/95 Search Results Part number search for devices beginning "2N2913DCSM" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/IC FT PD 2N2913DCSM NPN LCC2 45V 0.03A 60 240 5/10u 60MHz 0.6W 2N2913DCSM-JQR-B NPN LCC2 45V 0.03A 60 240 5/10u 60MHz 0.6W Searched through 3084 records and found 2 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. file:///I|/seme_lab/0509/2N2913DCSM.html [5/10/02 8:00:49 AM]