11/2008
Figure 1: Block Diagram
FEATURES
• Internal Reference Voltage
• Integrated Power Control
• InGaP HBT Technology
• ESD Protection on All Pins (2.5 kV)
• Low prole 1.0 mm
• Small Package Outline 7 mm x 7 mm
• EGPRS Capable (class 12)
• RoHS Compliant Package, 250 oC MSL-3
GMSK MODE
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 52 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +29 dBm GSM850/900 Output Power
• +28.5 dBm DCS/PCS Output Power
• 29 % GSM850/900 PAE
• 30 % DCS/PCS PAE
• -64 dBc Typical ACPR (400 kHz)
• -74 dBc Typical ACPR (600 kHz)
APPLICATIONS
• Dual/Tri/Quad Band Handsets, PDAs, and
Data Devices
PRODUCT DESCRIPTION
This power amplier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using an open loop polar architec-
ture. There are two amplier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplication chain is optimized for excellent
EDGE efciency, power, and linearity in a Polar loop
environment while maintaining high efciency in the
GSM/GPRS mode.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the number
of external components required to complete a power
control function.
AWT6280
Quad-band GSM/GPRS/Polar EDGE
Power Amplier Module
with Integrated Power Control
Data Sheet - Rev 2.1
M11 Package
18 Pin 7 mm x 7 mm x 1.0 mm
Surface Mount Module
The amplier’s power control range is typically 55 dB,
with the output power set by applying an analog volt-
age to VRAMP. All of the RF ports for this device are DC
blocked and internally matched to 50.
AWT6280R
GSM850/900_IN
TX_EN
DCS/PCS_IN
GSM850/900_OU
T
GSM850/900
Bias/Power
Control
DCS/PCS_OUT
DCS/PCS
BS
VRAMP
VBATT
CEXT
2
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 1: Pin Description
Figure 2: Pinout (X - ray Top View)
GND
DCS/PCS_IN
BS
T_EN
X
VBATT
VRAMP
GSM850/900_IN
DCS/PCS_OUT
GSM850/900_OUT
N/C
18
1
98
7
2
3
4
5
6
10
16
11
13
15
12
14
17
CEXT
GND
GND
GND
GND
GND
GND
GND
PIN NAME DESCRIPTION PIN NAME DESCRIPTION
1DCS/PCS_IN DCS/PCS RF Input 10 GSM850/900_OUT GSM850/900 RF Output
2BS Band Select Logic Input 11 GND Ground
3TX_EN TX Enable Logic Input 12 GND Ground
4 VBATT Battery Supply
Connection 13 N/C No Connection. Do not
ground
5 CEXT Bypass 14 GND Ground
6 VRAMP Analog Signal used to
control the output power 15 GND Ground
7GSM850/900_IN GSM850/900 RF Input 16 DCS/PCS_OUT DCS/PCS RF Output
8GND Ground 17 GND Ground
9GND Ground 18 GND Ground
3
AWT6280
Data Sheet - Rev 2.1
11/2008
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these
conditions. Exposure to absolute ratings for extended periods
of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
Figure 3: ESD Pin Rating
ELECTROSTATIC DISCHARGE SENSITIVITY
The AWT6280 part was tested to determine the ESD
sensitivity of each package pin with respect to ground.
All the package pins were subjected to an ESD
pulse event using the Human Body Model outlined
in JESD22-A114C.01 in either polarity with respect
to ground. The pre and post test I-V characteristics
of each pin are recorded. The ratings on each pin
require that it sustain the ESD event and show no
degradation.
PARAMETER MIN MAX UNITS
Supply Voltage (V
BATT
) - +7 V
RF Input Power (RF
IN
) - 11 dBm
Control Voltage (V
RAMP
) -0.3 1.8 V
Storage Temperature (T
STG
) -55 150 °C
4
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 4: Digital Inputs
Table 5: Logic Control Table
Table 3: Operating Conditions
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
PARAMETER MIN TYP MAX UNITS COMMENTS
Case temperature (T
C
) -20 - 85 °C
Supply voltage (V
BATT
) 3.0 3.5 4.8 V
Power supply leakage current -110 A
V
BATT
= 4.8 V, V
RAMP
= 0 V,
TX_EN = LOW
No RF applied
Control Voltage Range 0.2 -1.6 V
Turn on Time (T
ON
) - -1sV
RAMP
= 0.2 V, TX_EN = LOW Y HIGH
P
IN
= 5 dB
Turn Off Time (T
OFF
) --1sV
RAMP
= 0.2 V, TX_EN = LOW Y HIGH
P
IN
= 5 dB
Rise Time (T
RIS E
) --1sP
OUT
= -10 dBm Y P
MAX
(within 0.2 dB)
Fall Time (T
FALL
) --1sP
OUT
= P
MAX
Y -10 dBm (within 0.2 dB)
V
RAMP
Input Capacitance - 3 - pF
V
RAMP
Input Current - - 10 A
Duty Cycle - - 50 %
PARAMETER SYMBOL MIN TYP MAX UNITS
Logic High Voltage V
IH
1.2 -3.0 V
Logic Low Voltage V
IL
- - 0.5 V
Logic High Current |I
IH
| - - 30 A
Logic Low Current |I
IL
| - - 30 A
OPERATIONAL MODE BS TX_EN
GSM850/900 LOW HIGH
DCS/PCS HIGH HIGH
PA DISABLED -LOW
5
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 6: Electrical Characteristics for GSM850 GMSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
IN
)
824 -849 MHz
Input Power (P
IN
)03 5 dBm
Output Power (P
MAX
)34.5 35.3 -dBm Freq = 824 to 849 MHz
Degraded Output Power
(P
OUT
)32.5 33.5 -dBm V
BATT
= 3.0 V, T
C
= 85 °C
P
IN
= 0 dBm
PAE @ P
MAX
48 53 - % Freq = 824 to 849 MHz
Forward Isolation 1 --42 -30 dBm TX_EN = 0 V, P
IN
= 5 dBm
Forward Isolation 2 --26 -20 dBm TX_EN = HIGH ,V
RAMP
= 0.2 V
P
IN
= 5 dBm
Cross Isolation
(2F
o
, 3F
o
@ DCS/PCS port) --33 -20 dBm P
OUT
< 34.5 dBm
Second Harmonic --23 -15 dBm P
OUT
< 34.5 dBm
Third Harmonic --42 -20 dBm P
OUT
< 34.5 dBm
n * fo (n > 4), F
o
12.75
GHz --30 -10 dBm P
OUT
< 34.5 dBm
Stability
VSWR = 6:1 All Phases , P
OUT
< 34.5 dBm
- - -36 dBm F
OUT
< 1 GHz
- - -30 dBm F
OUT
> 1 GHz
Ruggedness No Permanent Degradation
VSWR 10:1, All Phase Angles P
OUT
< 34.5 dBm
RX Noise Power --86 -84 dBm F
TX
= 849 MHz, RBW = 100 kHz,
F
RX
= 869 to 894 MHz, P
OUT
< 34.5 dBm
Input Return Loss -1.5:1 2.5:1 VSWR P
OUT
< 34.5 dBm
6
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 7: Electrical Characteristics for GSM850 8PSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
IN
)
824 -849 MHz
Input Power 03 5 dBm
PAE 20 28 - % F
IN
= 824 to 849 MHz
P
OUT
set = +29 dBm
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-38
-62
-72
-77
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
P
OUT
= +29 dBm
EVM -15 % All Conditions under Polar operation
P
OUT
= +29 dBm
7
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 8: Electrical Characteristics for GSM900 GMSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
IN
)
880 -915 MHz
Input Power (P
IN
)03 5 dBm
Output Power (P
MAX
)34.5 35.0 -dBm Freq = 880 to 915 MHz
Degraded Output Power
(P
OUT
)32.5 33.0 -dBm V
BATT
= 3.0 V, T
C
= 85 °C
P
IN
= 0 dBm
PAE @ P
MAX
50 55 - % Freq = 880 to 915 MHz
Forward Isolation 1 --39 -30 dBm TX_EN = 0 V, P
IN
= 5 dBm
Forward Isolation 2 --26 -20 dBm TX_EN = HIGH ,V
RAMP
= 0.2 V
P
IN
= 5 dBm
Cross Isolation
(2F
o
, 3F
o
@ DCS/PCS port) --31 -20 dBm P
OUT
< 34.5 dBm
Second Harmonic --29 -15 dBm P
OUT
< 34.5 dBm
Third Harmonic --39 -20 dBm P
OUT
< 34.5 dBm
n * fo (n > 4), F
o
12.75
GHz --29 -8 dBm P
OUT
< 34.5 dBm
Stability
VSWR = 6:1 All Phases , P
OUT
< 34.5 dBm
- - -36 dBm F
OUT
< 1 GHz
- - -30 dBm F
OUT
> 1 GHz
Ruggedness No Permanent Degradation
VSWR 10:1, All Phase Angles P
OUT
< 34.5 dBm
RX Noise Power
--85 -80 dBm F
TX
= 915 MHz, RBW = 100 kHz,
F
RX
= 925 to 935 MHz, P
OUT
< 34.5 dBm
--86 -85 dBm F
TX
= 915 MHz, RBW = 100 kHz,
F
RX
= 935 to 960 MHz, P
OUT
< 34.5 dBm
Input Return Loss -1.5:1 2.5:1 VSWR P
OUT
< 34.5 dBm
8
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 9: Electrical Characteristics for GSM900 8PSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
IN
)
880 -915 MHz
Input Power 03 5 dBm
PAE 20 29 - % F
IN
= 880 to 915 MHz
P
OUT
set = +29 dBm
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-38
-64
-74
-77
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
P
OUT
= +29 dBm
EVM -15 % All Conditions under Polar operation
P
OUT
= +29 dBm
9
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 10: Electrical Characteristics for DCS GMSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width =1154 µs,
Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( F
IN
)1710 -1785 MHz
Input Power (P
IN
)03 5 dBm
Output Power (P
MAX
)32.0 33.2 -dBm Freq = 1710 to1785 MHz
Degraded Output Power
(P
OUT
)30.0 31.0 -dBm V
BATT
= 3.0 V, T
C
= 85 °C
P
IN
= 0 dBm
PAE @ P
MAX
45 52 - % Freq = 1710 to1785 MHz
Forward Isolation 1 --37 -31 dBm TX_EN = 0 V, P
IN
= 5 dBm
Forward Isolation 2 --22 -17 dBm TX_EN = HIGH ,V
RAMP
= 0.2 V
P
IN
= 5 dBm
Second Harmonic --19 -10 dBm P
OUT
< 32.0 dBm
Third Harmonic --27 -20 dBm P
OUT
< 32.0 dBm
n * fo (n > 4), Fo 12.75
GHz --34 -10 dBm P
OUT
< 32.0 dBm
Stability
VSWR = 6:1 All Phases , P
OUT
< 32.0 dBm
- - -36 dBm F
OUT
< 1 GHz
- - -30 dBm F
OUT
> 1 GHz
Ruggedness No Permanent Degradation
VSWR 10:1, All Phase Angles P
OUT
< 32.0 dBm
RX Noise Power --86 -81 dBm F
TX
= 1785 MHz, RBW = 100 kHz,
F
RX
= 1805 to1880 MHz, P
OUT
< 32.0 dBm
Input Return Loss -1.5:1 2.5:1 VSWR P
OUT
< 32.0 dBm
10
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 11: Electrical Characteristics for DCS 8PSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
IN
)
1710 -1785 MHz
Input Power 03 5 dBm
PAE 25 30 - % F
IN
= 1710 to 1785 MHz
P
OUT
set = +28.5 dBm
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-38
-62
-73
-76
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
P
OUT
= +28.5 dBm
EVM -15 % All Conditions under Polar operation
P
OUT
= +28.5 dBm
11
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 12: Electrical Characteristics for PCS GMSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width =1154 µs,
Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( F
IN
)1850 -1910 MHz
Input Power (P
IN
)03 5 dBm
Output Power (P
MAX
)32.0 32.8 -dBm Freq = 1850 to1910 MHz
Degraded Output Power
(P
OUT
)30.0 30.5 -dBm V
BATT
= 3.0 V, T
C
= 85 °C
P
IN
= 0 dBm
PAE @ P
MAX
45 52 - % Freq = 1850 to1910 MHz
Forward Isolation 1 --39 -33 dBm TX_EN = 0 V, P
IN
= 5 dBm
Forward Isolation 2 --23 -17 dBm TX_EN = HIGH ,V
RAMP
= 0.2 V
P
IN
= 5 dBm
Second Harmonic --21 -12 dBm P
OUT
< 32.0 dBm
Third Harmonic --35 -20 dBm P
OUT
< 32.0 dBm
n * fo (n > 4), Fo 12.75
GHz --33 -10 dBm P
OUT
< 32.0 dBm
Stability
VSWR = 6:1 All Phases , P
OUT
< 32.0 dBm
- - -36 dBm F
OUT
< 1 GHz
- - -30 dBm F
OUT
> 1 GHz
Ruggedness No Permanent Degradation
VSWR 10:1, All Phase Angles P
OUT
< 32.0 dBm
RX Noise Power --87 -82 dBm F
TX
= 1910 MHz, RBW = 100 kHz,
F
RX
= 1930 to1990 MHz, P
OUT
< 32.0 dBm
Input Return Loss -1.5:1 2.5:1 VSWR P
OUT
< 32.0 dBm
12
AWT6280
Data Sheet - Rev 2.1
11/2008
Table 13: Electrical Characteristics for PCS 8PSK mode
Unless otherwise specied: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
IN
)
1850 -1910 MHz
Input Power 03 5 dBm
PAE 25 32 - % F
IN
= 1850 to 1910 MHz
P
OUT
set = +28.5 dBm
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-37
-63
-72
-75
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz
dBc/30 kHz
dBc/100 kHz
All conditions under Polar operation
P
OUT
= +28.5 dBm
EVM -15 % All Conditions under Polar operation
P
OUT
= +28.5 dBm
13
AWT6280
Data Sheet - Rev 2.1
11/2008
APPLICATION INFORMATION
Figure 4: Recommended Application Circuit
GSM850/900 RF INPUT
1
2
3
4
5
6
7
16
15
14
13
12
11
10
89
18 17
DCS/PCS_IN
BS
TX_EN
VBATT
CEXT
VRAMP
GSM_IN
GND GND
GND
GND
GND
GND
GSM_OUT
N/C
GND
GND
DCS/PCS_OUT
AWT6280
DCS/PCS RF INPUT
BAND SELECT
TX ENABLE
DAC OUTPUT
BATTERY
VOLTAGE
2.2k*68pF *
* Component values depends on baseband chipset used.
** This component should be placed as close to the device pin as possible.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not critical as they may not be required in the
final application.
2.7pF**
47uF++
22nF**
1nF++
1nF++ ASM
or
FEM
14
AWT6280
Data Sheet - Rev 2.1
11/2008
PACKAGE OUTLINE
Figure 5: M11 Package Outline - 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module
Figure 6: Branding Specication
15
AWT6280
Data Sheet - Rev 2.1
11/2008
Figure 7: Recommended PCB Layout Information
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
16
AWT6280
Data Sheet - Rev 2.1
11/2008
ORDERING INFORMATION
ORDER
NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWT6280RM11P8 -20 °C to +85°C
RoHS-compliant 18 Pin
7 mm x 7 mm x 1.0 mm
Surface Mount Module
Tape and Reel, 2500 pieces per reel
AWT6280RM11P9 -20 °C to +85°C
RoHS-compliant 18 Pin
7 mm x 7 mm x 1.0 mm
Surface Mount Module
Partial Tape and Reel