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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
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Rev.1.00, Aug.20.2004, page 1 of 6
FS100UMJ-03F
High-Speed Switching Use
Nch Power MOS FET REJ03G0249-0100
Rev.1.00
Aug.20.2004
Features
• Drive voltage : 4 V
• VDSS : 30 V
• rDS(ON) (max) : 4.0 mΩ
• ID : 100 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
TO-220
1
123
4
1. Gate
2. Drain
3. Source
4. Drain
3
2, 4
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter Symbol Ratings Unit Conditions
Drain-source voltage VDSS 30 V VGS = 0 V
Gate-source voltage VGSS ±20 V VDS = 0 V
Drain current ID100 A
Drain current (Pulsed) IDM 400 A
Avalanche current (Pulsed) IDA 100 A L = 10 µH
Source current IS100 A
Source current (Pulsed) ISM 400 A
Maximum power dissipation PD125 W
Channel temperature Tch – 55 to +150 °C
Storage temperature Tstg – 55 to +150 °C
Mass — 2.0 g Typical value
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Drain-source breakdown voltage V(BR)DSS 30 — — V ID = 1 mA, VGS = 0 V
Gate-source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 V
Drain-source leakag e current IDSS — — 100 µAV
DS = 30 V, VGS = 0 V
Gate-source leakage current IGSS ——±10 µAV
GS = ±20 V, VDS = 0 V
Gate-source threshold voltage VGS(th) 1.0 1.5 2.0 V ID = 1 mA, VDS = 10 V
Drain-source on-state resistanc e rDS(ON) —3.14.0mΩID = 50 A, VGS = 10 V
Drain-source on-state resistanc e rDS(ON) —4.25.7mΩID = 50 A, VGS = 4 V
Drain-source on-state voltage VDS(ON) — 0.16 0.20 V ID = 50 A, VGS = 10 V
Forward transfer admittance | yfs | — 120 — S I D = 50 A, VDS = 10 V
Input capacitance Ciss — 7600 — pF
Output capacitance Coss — 230 0 — pF
Reverse transfer capacitance Crss — 1000 — pF
VDS = 10 V, VGS = 0 V,
f = 1MHz
Turn-on delay time td(on) —30—ns
Rise time tr— 170 — ns
Turn-off delay time td(off) — 520 — ns
Fall time tf— 290 — ns
VDD = 15 V, ID = 50 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
Source-drain voltage VSD —1.01.5VI
S = 50 A, VGS = 0 V
Thermal resistance Rth(ch-c) — — 1.0 °C/W Channel to case
Reverse recovery time trr —80—nsI
S = 50 A, dis/dt = – 50 A/µs
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
Drain Power Dissipation PD (W)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Output Characteristics (Typical)
Drain Current ID (A)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain Current ID (A)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
Drain-Source On-State Voltage VDS(ON) (V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
Drain-Source On-State Resistance rDS(ON) (mΩ)
0
50
25
75
100
125
150
020050 100 150
10
1
3
5
7
10
2
2
10
0
2
3
5
7
10
3
7
2
3
5
210
0
2 3710
1
555710
2
33 7
tw = 10µs
100µs
10ms
100ms
1ms
DC
0
20
40
60
80
100
0 0.2 0.4 0.6 0.8 1.0
3V
4V
0
10
20
30
40
50
0 0.1 0.2 0.3 0.4 0.5
0
2
4
6
8
10
10
1
10
2
10
3
37 75210
0
375232 5
10V
0
0.2
0.4
0.6
0.8
1.0
02468
10
70A
50A
V
GS
= 4V
I
D
= 100A
5V
3V
4V
6V
V
GS
= 10V
5V
Tc = 25°C
Single Pulse
V
GS
= 10V
6V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
Forward Transfer Admittance | yfs | (S)
Switching Characteristics (Typical)
Drain-Source Voltage VDS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current ID (A)
Capacitance (pF)
Switching Time (ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source Voltage VGS (V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage VSD (V)
Source Current IS (A)
0
20
40
60
80
100
02468
10 10
0
10 10
1
247
2
35 2 4357
10
1
2
2
3
4
5
7
10
2
2
3
4
5
7
0
2
4
6
8
10
12004080 160
200 0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
V
DS
= 15V
20V
25V
10
3
10
4
2
3
2
3
5
7
3
5
7
10
0
22
1
571010
2
3573
10
–1
2573
10
2
10
1
2
3
4
5
7
10
3
2
3
4
5
7
10
0
10 10
1
247
2
35 2 4357
t
d(off)
t
d(on)
t
r
t
f
Tc = 25°C
VDS = 10V
Pulse Test
VDS = 10V
Pulse Test
Tc = 25°C
75°C
125°C
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
Tch = 25°C, VDD = 15V
VGS = 10V, RGEN = RGS = 50Ω
Tch = 25°C
ID = 100A
75°C
25°C
Tc = 125°C
VGS = 0V
Pulse Test
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 5 of 6
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Transient Thermal Impedance Characteristics
Pulse Width tw (s)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Switching Time Measurement Circuit Switching Waveform
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150 0
0.8
1.6
2.4
3.2
4.0
–50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
10
–4
10
1
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
5327 5327 5327 5327 5327
10
1
10
0
10
–3
10
–2
10
–1
10
–2
Single Pulse
0.5
0.2
0.05
0.01
D = 1.0
0.02
0.1
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
RL
VDD
Vout
Monitor
RGEN
RGS
VGS = 10V
ID = 50A
Pulse Test
VDS = 10V
ID = 1mA
VGS = 0V
ID = 1mA
PDM
tw
D = T
tw
T
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 6 of 6
Package Dimensions
TO-220
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
Conforms 2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5
16 max
3.8 max
12.5 min
4.5
7.0
1.0
0.8
2.5 2.5
4.5
1.3
0.5 2.6
φ 3.6 ± 0.2
3.2 ± 0.2
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Stand ard p acking Quantity Standard order code Standard order
code example
Straight type Static electricity prevention bag 100 Type name FS100UMJ-03F
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code FS100UMJ-03F-A8
Note : Please confirm the specification about the shipping in detail.
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