Single Diode Schottky Barrier Diode D1FS4A Msi OUTLINE Package : 1F 40V 1.5A e/\@SMD o(EVF=0.45V Parsm INS li 3 Ra oAf YF VIBE DC/DCAIt RB, 9' Ls, OA ia 5B K-59 7/83 BtKX RATINGS Small SMD Low Vr=0.45V Prarsm Rating Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation Communication, Portable set avKFr-? Cathode mark Weight 0.058g (Typ) fh PR Type No. P| ce G Dp-qq 2) Geb dd (fal) Date code ol Lo Unit!mm Fu. TLR ce Web +t 4 BMS CRaMAEL Favs, lI Ove RAR CMR F So. For details of the outline dimensions, Wax) & OSI refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". @xtRAZH Absolute Maximum Ratings (hee TI=25C) i 4H ay : th % fie Item Symboll conditions Type No. DIFS4A Unit Ceti iit ME pS 9 Storage Temperature Tstg 55~ 150 C Hey bie : 9 Operation Junction Temperature Tj 150 Cc +f A SLE r Maximum Reverse Valtage Va 40 V B00 KLAR ihe +8 AGO.5ms, duty 1/40 y Repetitive Peak Surge Reverse Voltage Vrrsm Pulse width 0.5ms, duty 1/40 45 V copy TKS FIRM 0 ae I 5OHz IEG, Ui Air Ta*28 On alumina substrate 1.5 A Average Rectified Forward Current o 50Hz sine wave, Resistance load Ta=36C Ti y b MAR a=36C On glass-epoxy substrate il tt AL MTR re 50Hz Esk, JRA LIA 2 eat AA, T= 250 60 A Peak Surge Forward Current M 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=25C HY ELAR 7 - ib AiO us, Tj = 25 xy Repetitive Peak Surge Reverse Power | PRRSM | pulse width 10s, Tj 25C 160 W @BRh- AHH Electrical Characteristics (HDs TI=25C) nas OL AE wR a Ir=T1A; Biles measuenient MAX 0.45 . Forward Voltage ae PE 2 Fe Ip= L5A, Pulse measurement MAX 0.48 EAE ait ites ve AGE Reverse Current Tk Vr=VeM, pulse measurement MAX 2 mA or Pit : cs anw Seen catnichanbn Cj | =1MHz, Vr=10V TYP 95 pF : Lefr ih: FIR a if Junction to lead MAX 23 Sunt TeI+RRER 4 NT Thermal Resistance 83 if, 1 BH) On alumina substrate MAX 108 C/W Ja | Junction to ambient Ti) > bE MAX On glass-epoxy substrate 157 50 (J532-1) www.shindengen.co.jp/product/semilSmall SMD Single SBD D1FS4A Mist CHARACTERISTIC DIAGRAMS NET Tea Fat NEF 7738 thee PAYOR Ti it Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability mo Sine wave on << = 3 5 is z Toms Wms! < z i cycle oi = 5 ie o Tht (My & 3 5 DTH 1SsC(TYP) a z 3 + TI= 25C(MAX)PEt S a z Ti= 25C(TYP) 2 z g 2 z & o z A eS 3 (Pulse measurement) eS ao Forward Voltage Vr (V) Average Rectified Forward Current lo [A) Number of Cycles [cycle] MAME WEARAR HeaaR Reverse Current Reverse Current Ix (mA) [Pulse measurement) Reverse Voltage Vr (V] Reverse Power Dissipation as . Tn 1 me D=tp/T j= 18rct Reverse Power Dissipation Pe (W) Reverse Voltage Vr ([V] Junction Capacitance Cj (pF) Reverse Voltage Vr [V] F4lbF4yvINT Ta-lo Derating Curve Ta-lo On alumina substrate itp = | Average Rectified Forward Current Io CA) Ambient Temperature Ta (C) F4lbF4vINT Ta-lo Derating Curve Ta-lo Soldering land 2enm] Conductor Layer 35ye i 0 --k = {=-1 To 7 VR 1 VR=15V | D=tp/T Average Rectified Forward Current lo CA) Ambient Temperature Ta (C) BOBLEARY TPR Repetitive Surge Reverse Power Derating Curve Ve Ver am 4 Tet ip) Pers =TkeX VRP PresM Derating [%] Operation Junction Temperature Tj (C) MOBLEAMY-VERARE Repetitive Surge Reverse Power Capability 10pts) Jas} => rip) Prem =lepx Var Ratio of Prrsm(tp)/ Presa [ep Pulse Width tp (ys) * Sine wave (i50Hz THE LTV ET. * S0Hz sine wave is used for measurements. RR DOORS -MEAY IL 789 Sai otTN ET. Typical SHENK Se RL ET %* Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 51