BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●Designed for Complementary Use with the
BD246 Series
●80 W at 25°C Case Temperature
●10 A Continuous Collector Current
●15 A Peak Collector Current
●Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATINGSYMBOLVALUEUNIT
Collector-emitter voltage (RBE = 100 Ω)
BD245
BD245A
BD245B
BD245C
VCER
55
70
90
115
V
Collector-emitter voltage (IC = 30 mA)
BD245
BD245A
BD245B
BD245C
VCEO
45
60
80
100
V
Emitter-base voltageVEBO5V
Continuous collector current IC10A
Peak collector current (see Note 1)ICM15A
Continuous base current IB3A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot80W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot3W
Unclamped inductive load energy (see Note 4)½LIC262.5mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL250°C